JPS63136535A - Wire bonding method - Google Patents

Wire bonding method

Info

Publication number
JPS63136535A
JPS63136535A JP61280606A JP28060686A JPS63136535A JP S63136535 A JPS63136535 A JP S63136535A JP 61280606 A JP61280606 A JP 61280606A JP 28060686 A JP28060686 A JP 28060686A JP S63136535 A JPS63136535 A JP S63136535A
Authority
JP
Japan
Prior art keywords
distance
bonding
connection point
wire
tool
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61280606A
Other languages
Japanese (ja)
Other versions
JPH0793339B2 (en
Inventor
Masayoshi Yamaguchi
政義 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP61280606A priority Critical patent/JPH0793339B2/en
Publication of JPS63136535A publication Critical patent/JPS63136535A/en
Publication of JPH0793339B2 publication Critical patent/JPH0793339B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512Aligning
    • H01L2224/85148Aligning involving movement of a part of the bonding apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To obtain excellent bonding characteristics while improving yield by correcting a search section distance at the time of the next bonding operation at every bonding operation. CONSTITUTION:A distance L between a node 31 at the time fo ofnding processing at one node 31 and a reference position 32 is measured every time said bonding processing is executed, and the distance S of a search section 34 for bonding processing at the adjacent next node is corrected from the distance L. Consequently, actual distances C on correction sections 33 at each node 31 ranging from No.1 to No.n are made approximately the same distance C already set. A bonding tool 18 is brought into contact with respective node 31 under always constant best conditions, thus acquiring stable bonding characteristics.

Description

【発明の詳細な説明】 [発明の目的] (産業上の利用分野) 本発明は、例えば基板に取付けられた半導体ペレット上
の各接続点にボンディングツールによってワイヤを自動
的に結線するワイヤボンディング方法に関する。
[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) The present invention provides a wire bonding method in which a bonding tool automatically connects a wire to each connection point on a semiconductor pellet attached to a substrate, for example. Regarding.

(従来の技術) 例えば半導体製造工程の一つとして、第4図に示すよう
に、基板1上に接着剤2等で取付けられた半導体ペレッ
ト3の各電極又は各ヘッダービン3′と基板1に設けら
れた各リード端子4とを細いワイヤ5で結線するワイヤ
ボンディング工程がある。通常、このワイヤボンディン
グ工程においては、第5図および第6図に示すように、
基板1から上方に距離LDだけ離れた基準位置6にワイ
ヤボンディングを行なうボンディングツール7が位置し
ている。そして、第6図に示すように、基準位置6から
半導体ペレット3の接続点位置までの距MLをサーチ区
間(距離S)8と補正区間(距IC)9とに分割してい
る。そして、ボンディングツール7を半導体ペレット3
の接続点まで降下させてワイヤ5を接続点に結線する場
合、ボンディングツール7をサーチ区間8内では高速で
下降させ、サーチ区間8を過ぎて補正区間9内ではサー
チ区間8内より遅い一定速度で下降させるようにしてい
る。
(Prior Art) For example, as one of the semiconductor manufacturing processes, as shown in FIG. There is a wire bonding process in which the provided lead terminals 4 are connected with thin wires 5. Usually, in this wire bonding process, as shown in FIGS. 5 and 6,
A bonding tool 7 for performing wire bonding is located at a reference position 6 spaced upward from the substrate 1 by a distance LD. As shown in FIG. 6, the distance ML from the reference position 6 to the connection point position of the semiconductor pellet 3 is divided into a search section (distance S) 8 and a correction section (distance IC) 9. Then, the bonding tool 7 is attached to the semiconductor pellet 3.
When connecting the wire 5 to the connection point by lowering the bonding tool 7 to the connection point, the bonding tool 7 is lowered at high speed within the search section 8, and after passing the search section 8 and within the correction section 9, the bonding tool 7 is lowered at a constant speed slower than within the search section 8. I am trying to lower it with

なお、前記サーチ区間8の距離Sは予めワイヤボンディ
ングされる各半導体ペレット3の種類毎にオペレータに
よ2り操作パネル等からキー人力される。
It should be noted that the distance S of the search section 8 is determined in advance by key input from an operation panel or the like by an operator for each type of semiconductor pellet 3 to be wire-bonded.

このようにホンディングツール7の下降速度を2段階制
御すことによって、ボンディング処理速度を増大すると
ともにボンディングツール7が半導体ペレット3に接触
するときの衝撃を緩和できる。
By controlling the descending speed of the bonding tool 7 in two steps in this manner, the bonding processing speed can be increased and the impact when the bonding tool 7 contacts the semiconductor pellet 3 can be reduced.

しかしながら、上記めようにボンディングツール7の降
下速度を2段階制御するようにしたワイヤボンディング
方法においても、まだ解消すべき次のような課題があっ
た。すなわち、ワイヤボンディングされる半導体ペレッ
ト3が第5図に示すように基板1に正しく取付けられて
いる場合は問題ないが、例えば第7図に示すように、接
着剤2が基板1と半導体ペレット3との間に均一に分布
されにない状態が発生する。この場合、半導体ペレット
3は基板1に対して傾いた状態で接着される。その結果
、例えば半導体ペレット3上面の左端の接続点における
接続点と基準位置6との間の距離と、右端の接続点と基
準位置6との間の距離との間に誤差ΔLが生じる。
However, even in the wire bonding method in which the descending speed of the bonding tool 7 is controlled in two stages as described above, there are still problems to be solved as follows. That is, if the semiconductor pellet 3 to be wire-bonded is correctly attached to the substrate 1 as shown in FIG. 5, there is no problem, but as shown in FIG. A situation occurs where the distribution is not uniform between the two. In this case, the semiconductor pellet 3 is bonded to the substrate 1 in an inclined state. As a result, for example, an error ΔL occurs between the distance between the connection point at the left end of the upper surface of the semiconductor pellet 3 and the reference position 6 and the distance between the right end connection point and the reference position 6.

一方、第6図で説明したように、サーチ区間8の距!!
!8は半導体ペレット3の種類毎に一定値であるので、
補正区間9の実際の距mcが変化することになる。した
がって、ボンディングツール7がサーチ区間8の下端位
置く補正区間の上端位置)10を通過してから、半導体
ペレット3の各接続点に到達するまでの距離および時間
が変動する。
On the other hand, as explained in FIG. 6, the distance of search section 8! !
! Since 8 is a constant value for each type of semiconductor pellet 3,
The actual distance mc of the correction section 9 will change. Therefore, the distance and time from when the bonding tool 7 passes through the lower end position of the search section 8 (the upper end position of the correction section) 10 until it reaches each connection point of the semiconductor pellet 3 vary.

その結果、接触するときの衝撃荷重が変動するので、安
定したワイヤボンディング特性が得られない問題がある
。さらに、大きな衝撃荷重が半導体ペレット3に印加さ
れた場合は半導体ペレット3自体が破損する懸念もある
。したがって、ワイヤボンディング工程全体における製
品歩留りが低下する。
As a result, since the impact load upon contact varies, there is a problem that stable wire bonding characteristics cannot be obtained. Furthermore, if a large impact load is applied to the semiconductor pellet 3, there is a fear that the semiconductor pellet 3 itself may be damaged. Therefore, the product yield in the entire wire bonding process is reduced.

(発明が解決しようとする問題点) このように、従来のワイヤボンディング方法であれば、
半導体ペレット3が傾斜されて基板に取付けられていた
場合においては、良好なボンディング特性が得られない
問題があった。
(Problems to be solved by the invention) In this way, with the conventional wire bonding method,
When the semiconductor pellet 3 is attached to the substrate at an angle, there is a problem that good bonding characteristics cannot be obtained.

本発明はこのような事情に基づいてなされたものであり
、各ボンディング動作毎に次のボンディング動作時にお
けるサーチ区間距離を補正することによって、たとえ半
導体ペレットが傾斜して取付けられたとしても良好なボ
ンディング特性が得られ、また歩留りを向上できるワイ
ヤボンディング方法を提供することを目的と5する。
The present invention was made based on these circumstances, and by correcting the search interval distance for the next bonding operation for each bonding operation, it is possible to obtain a good result even if the semiconductor pellet is attached at an angle. It is an object of the present invention to provide a wire bonding method that can obtain good bonding characteristics and improve yield.

[発明の構成] (問題点を解決するための手段) 本発明のワイヤボンディング方法においては、基板の上
方位置に設けられた基準位置から半導体ペレットの接続
点位置まで距離をサーチ区間と補正区間とに分割し、半
導体ペレットの接続点にボンディングツールを接触させ
てワイヤを結線する度に、基板の上方位置に設定された
基準位置から接続点までの距離を測定し、測定された距
離および補正区間の距離に基づいて次の接続点に対する
ボンディング動作におけるサーチ区間距離を算出するよ
うにしている。
[Structure of the Invention] (Means for Solving Problems) In the wire bonding method of the present invention, the distance from the reference position provided above the substrate to the connection point position of the semiconductor pellet is divided into a search section and a correction section. Each time a wire is connected by touching the bonding tool to the connection point of the semiconductor pellet, the distance from the reference position set above the board to the connection point is measured, and the measured distance and correction interval are The search interval distance in the bonding operation for the next connection point is calculated based on the distance.

(作用) このように構成されたワイヤボンディング方法であれば
、半導体ペレット上の一つの接続点にボンディングツー
ルが接触してワイヤが結線されると、このときにおける
基準位置から接続点までの距離が測定され、この距離お
よび補正区間距離に基づいて次の接続点をボンディング
する場合におけるボンディングツールの下降時のサーチ
区間距離が算出される。このようにサーチ区間距離は絶
えず一つ前の接続点の距離にて補正されるっしたがって
、各接続点における補正区間の実際の距離はほぼ一定値
となる。しかして、各接続点で均一で良好なボンディン
グ特性が得られる。
(Function) With the wire bonding method configured in this way, when the bonding tool comes into contact with one connection point on the semiconductor pellet and the wire is connected, the distance from the reference position to the connection point at this time is Based on this distance and the corrected section distance, the search section distance when the bonding tool is lowered when bonding the next connection point is calculated. In this way, the search section distance is constantly corrected by the distance of the previous connection point, so the actual distance of the correction section at each connection point becomes a substantially constant value. Therefore, uniform and good bonding characteristics can be obtained at each connection point.

〈実施例) 以下本発明の一実施例を図面を用いて説明する。<Example) An embodiment of the present invention will be described below with reference to the drawings.

第1図は実施例のワイヤボンディング方法を適用したワ
イヤボンディング装置の要部を示す模式図である。固定
台11上にリニアモータ12のヨーク(固定子)12a
が固定されている。このリニアモータ12の固定子12
aの中心に永久磁石12bが取付けられており、永久磁
石12bの周囲に可動コイル12Gが微小間隔を有して
配設されている。そして、ヨーク12a、永久磁石12
b、可動コイル12cからなるリニアモータ12は移動
リニアモータ駆動回路13から可動コイル12cに励1
%f流が供給され、?!!流の向きが変わることによっ
て、可動コイル12Cが上下に移動する。
FIG. 1 is a schematic diagram showing the main parts of a wire bonding apparatus to which the wire bonding method of the embodiment is applied. The yoke (stator) 12a of the linear motor 12 is mounted on the fixed base 11.
is fixed. Stator 12 of this linear motor 12
A permanent magnet 12b is attached to the center of a, and a moving coil 12G is arranged around the permanent magnet 12b with a minute interval. Then, the yoke 12a, the permanent magnet 12
b. The linear motor 12 consisting of a moving coil 12c receives an electric current from the moving linear motor drive circuit 13 to the moving coil 12c.
%f flow is supplied, ? ! ! By changing the direction of the flow, the movable coil 12C moves up and down.

リニアモータ12の可動コイル12Cは可動アーム14
の下面に固定されている。すなわち、リニアモータ12
を駆動すると可動アーム14が上下に移動する。可動ア
ーム14の上面に加圧用のりニアモータ15のヨーク1
5aが取付けられており、可動コイル15CはL型支持
部材16の上端に固定されている。このし型支持部材1
6の下端は、前記可動アーム14に穿設された貫通孔を
貫通して、可動アーム14の下面に板ばね17を介して
連結されている。L型支持部材16の下端部近傍には先
端にボンディングツール18が取付けられたツールアー
ム19の他端が固定されている。したがって、加圧リニ
アモータ駆動回路20からリニアモータ15の可動コイ
ル15Gに励磁電流を供給すると、L型支持部材16は
前方へ移動しようとする。しかし、下端が板ばね17に
て可動アーム14に連結されているので、L型支持部材
16は矢印六方向に回動する。その結果、ツールアーム
19の先端に取付けられたボンディングツール18が下
方へ移動する。また、可動コイル15Cへの励!!電流
の供給を′arIfIすると、板ばね17の復元力によ
り、L型支持部材16は元の位置に復帰する。
The movable coil 12C of the linear motor 12 is connected to the movable arm 14.
is fixed to the bottom of the That is, the linear motor 12
When driven, the movable arm 14 moves up and down. Yoke 1 of near motor 15 is glued to the upper surface of movable arm 14 for pressurizing.
5a is attached, and the moving coil 15C is fixed to the upper end of the L-shaped support member 16. This ribbon-shaped support member 1
The lower end of the movable arm 14 passes through a through hole formed in the movable arm 14, and is connected to the lower surface of the movable arm 14 via a leaf spring 17. The other end of a tool arm 19 having a bonding tool 18 attached to its tip is fixed near the lower end of the L-shaped support member 16. Therefore, when the excitation current is supplied from the pressurizing linear motor drive circuit 20 to the moving coil 15G of the linear motor 15, the L-shaped support member 16 tends to move forward. However, since the lower end is connected to the movable arm 14 by the leaf spring 17, the L-shaped support member 16 rotates in the six directions of the arrows. As a result, the bonding tool 18 attached to the tip of the tool arm 19 moves downward. Also, excitation to moving coil 15C! ! When the current is supplied to 'arIfI', the restoring force of the leaf spring 17 causes the L-shaped support member 16 to return to its original position.

前記ボンディングツール18は背後から供給されたワイ
ヤ21の先端を加熱溶融して半導体ペレット22の接続
点に結線する。
The bonding tool 18 heats and melts the tip of the wire 21 supplied from behind and connects it to the connection point of the semiconductor pellet 22.

また、前記可動アーム14のボンディングツール18側
端にはギャップセンサ23が取付けられている。このギ
ャップセンサ23は、ギャップセンサ23とツールアー
ム19との間の距離が変化すると、変化量に対応した電
圧を発生してA 、/ D変換回路24へ送出する。す
なわち可動アーム14が下降して、ボンディングツール
18が接続点に接触し、ツールアーム19がたわむと、
ギャップセンサ23は接触信号を出力する。そして、こ
の接触信号はA/D変換回路24でデジクル値に変換さ
れてボンディング制御回路25へ入力される。ボンディ
ング制御回路25はギャップセンサ23からA/D変換
回路24を介して接触信号が入力されると、加圧リニア
モータ駆動回路20へ駆動信号を送出する。すると、加
圧リニアモータ15が動作して、L型支持部材16が矢
印六方向に回動し、ボンディングツール18をさらに半
導体ペレット22の接続点に押付ける。
Further, a gap sensor 23 is attached to the end of the movable arm 14 on the bonding tool 18 side. When the distance between the gap sensor 23 and the tool arm 19 changes, the gap sensor 23 generates a voltage corresponding to the amount of change and sends it to the A/D conversion circuit 24. That is, when the movable arm 14 descends, the bonding tool 18 contacts the connection point, and the tool arm 19 bends.
Gap sensor 23 outputs a contact signal. This contact signal is then converted into a digital value by the A/D conversion circuit 24 and input to the bonding control circuit 25. When the bonding control circuit 25 receives a contact signal from the gap sensor 23 via the A/D conversion circuit 24, it sends a drive signal to the pressurizing linear motor drive circuit 20. Then, the pressure linear motor 15 operates, the L-shaped support member 16 rotates in the six directions of the arrow, and the bonding tool 18 is further pressed against the connection point of the semiconductor pellet 22.

また、可動アーム14の他端には、固定台11との間の
距離変化を検出する非接触距離センサ26が取付けられ
ている。そして、この非接触変位センサ26にて検出さ
れた距離信号は位置検出制御回路27へ入力される。こ
の位置検出制御回路27は、ボンディング制御回路25
から送出される制御信号および前記距離信号に従って、
移動リニアモータ駆動回路13を駆動して、可動アーム
14の上下位置を制御する。
Furthermore, a non-contact distance sensor 26 is attached to the other end of the movable arm 14 to detect a change in distance between the movable arm 14 and the fixed base 11. The distance signal detected by the non-contact displacement sensor 26 is input to the position detection control circuit 27. This position detection control circuit 27 includes a bonding control circuit 25.
According to the control signal and the distance signal sent from
The moving linear motor drive circuit 13 is driven to control the vertical position of the movable arm 14.

次にこのように構成されたボンディング装置を用いて例
えば第7図に示すように基板に傾斜された状態で取付け
られた半導体ペレット22の上面におけるn個の接続点
にワイヤ21の先端を結線する方法を第2図を用いて説
明する。すなわち、図示するように、Nα1からN(l
 nまでの接続点31が存在し、各接続点31と基準位
置32との間の距I!ILが[1からしnまで変化する
とする。まず、Nα1の接続点31のボンディング動作
を開始させる前に、オペレータはこの半導体ペレット2
2にワイヤ21を最良の条件でボンディングすると想定
した場合の補正区間33の距I!1IICを、例えば操
作パネルのキーボード等からボンディング制御回路25
へ設定する。さらに、オペレータはNα1の接続点31
におけるサーチ区間34の距離を初期値So としてボ
ンディング制御回路25に設定(i示)する。
Next, using the bonding device configured as described above, the tips of the wires 21 are connected to n connection points on the upper surface of the semiconductor pellet 22 attached to the substrate in an inclined state, as shown in FIG. 7, for example. The method will be explained using FIG. That is, as shown in the figure, from Nα1 to N(l
There are up to n connection points 31, and the distance I between each connection point 31 and the reference position 32! Assume that IL changes from [1 to n. First, before starting the bonding operation of the connection point 31 of Nα1, the operator
2, the distance I of the correction section 33 assuming that the wire 21 is bonded under the best conditions! 1IIC can be connected to the bonding control circuit 25 from the keyboard of the operation panel, etc.
Set to Furthermore, the operator
The distance of the search section 34 in is set as an initial value So in the bonding control circuit 25 (indicated by i).

以上の初期設定が終了すると、ボンディング制御回路2
5は上記設定値を位置検出制量回路27および移動リニ
アモータ駆動回路13を介してリニアモータ12を起動
する。すると、ツールアーム19の先端に取付けられた
ボンディングツール18が下降を開始する。そして、先
に初期設定されたサーチ区間34の距11Soだけ高速
で下降し、境界点35位置で低速の一定速度に変化する
。次に、その下の補正区間33の距離Cだけ一定速度で
下降する。そして、接続点31に接触した時点でギャッ
プセンサ23が作動して、接触信号がボンデインク制御
回路25へ入力する。ボンディング制御回路25は接触
信号が入力されると加圧リニアモータ駆動回路20へ駆
動信号を送出するとともに、位置検出制御回路27へ制
御指令を送出して、この時点における基準位置32と接
続点31との間の距離Lsを読取る。なお、この距離は
非接触変位センサ26からの距離信号にて求められる。
When the above initial settings are completed, the bonding control circuit 2
5 starts the linear motor 12 using the set value via the position detection control circuit 27 and the moving linear motor drive circuit 13. Then, the bonding tool 18 attached to the tip of the tool arm 19 starts to descend. Then, it descends at high speed by the distance 11So of the search section 34 that was initialized earlier, and changes to a low constant speed at the boundary point 35 position. Next, it descends at a constant speed by a distance C in the correction section 33 below. Then, when the contact point 31 is contacted, the gap sensor 23 is activated and a contact signal is input to the bond ink control circuit 25. When the contact signal is input, the bonding control circuit 25 sends a drive signal to the pressurizing linear motor drive circuit 20 and also sends a control command to the position detection control circuit 27 to determine the reference position 32 and connection point 31 at this point in time. Read the distance Ls between. Note that this distance is determined using a distance signal from the non-contact displacement sensor 26.

ワイヤ21の接続点31への結線処理が終了すると、再
びリニアモータ12を逆方向に駆動して、ボンディング
ツール18を所定位置まで後退させる。
When the process of connecting the wire 21 to the connection point 31 is completed, the linear motor 12 is driven in the opposite direction again to move the bonding tool 18 back to a predetermined position.

次に順2の接続点31に対するボンデング処理を開始さ
せる。この場合、Nα2の接続点31のサーチ区間34
の距l1lS2は、NQ 1の接続点のボンディング処
理時に求めた距1りILxから予め設定されている補正
区間距離Cを減算した値(L+ −C)として算出する
。そして、Nα1と同様にボンディングツール18をサ
ーチ区間(距離S2 )内は高速下降させ、補正区間(
距11c)内は一定速度で下降させる。そして、ボンデ
ィングツール18がNα2の接続点31に接触すると、
その時点での接続点31と基準位置32との間の距!I
L2を求める。
Next, bonding processing for the second connection point 31 is started. In this case, the search section 34 of the connection point 31 of Nα2
The distance l1lS2 is calculated as the value (L+ -C) obtained by subtracting the preset correction section distance C from the distance ILx obtained during the bonding process of the connection point of NQ1. Then, similarly to Nα1, the bonding tool 18 is lowered at high speed within the search section (distance S2), and the correction section (distance S2) is
The distance 11c) is lowered at a constant speed. Then, when the bonding tool 18 contacts the connection point 31 of Nα2,
The distance between the connection point 31 and the reference position 32 at that point! I
Find L2.

このように、一つの接続点31におけるボンディング処
理を実行する度に、その時点での接続点31と基準位置
32との間の距離りを測定し、その距離りから隣接する
次のNOの接続点におけるボンディング処理のサーチ区
間34の距I!1lISを補正するようにしている。し
たがって、ボンディングツール18が低速の一定速度で
下降する補正区間33の実際の距離Cの最大誤差は一つ
前の距離りと今回の距離りどの差以内に抑制される。そ
の結果、N(11からmnに亘って各接続点31におけ
る補正区間33の実際の距MCは設定された距wiCか
らほとんど変化しないことになる。しかして、ボンディ
ングツール18は常に一定した最良の条件で各接続点3
1に接触することになり、安定したボンディング特性が
得られる。
In this way, each time the bonding process is performed at one connection point 31, the distance between the connection point 31 and the reference position 32 at that time is measured, and the connection of the next adjacent NO is determined from that distance. Distance I of the search section 34 of the bonding process at the point! 1lIS is corrected. Therefore, the maximum error in the actual distance C of the correction section 33 in which the bonding tool 18 descends at a constant low speed is suppressed to within the difference between the previous distance and the current distance. As a result, the actual distance MC of the correction section 33 at each connection point 31 from N(11 to mn) hardly changes from the set distance wiC. Each connection point 3 with conditions
1, and stable bonding characteristics can be obtained.

第3図は上記のように移動制御されるボンディングツー
ル18の動作を示す図である。横軸は時間tを示し、縦
軸はボンディングツール18の上下方向の移動距離を示
す。
FIG. 3 is a diagram showing the operation of the bonding tool 18 whose movement is controlled as described above. The horizontal axis indicates time t, and the vertical axis indicates the vertical movement distance of the bonding tool 18.

このように、たとえ半導体ペレット22が基板に傾斜し
た状態で取付けられていたとしても、各接続点31にお
いて、最良の条件でワイヤボンディングが実行され、ペ
レット割れ等の発生を抑制でき、半導体ペレットのボン
ディング工程における製品歩留りを大幅に向上できる。
In this way, even if the semiconductor pellet 22 is attached to the substrate in an inclined state, wire bonding is performed under the best conditions at each connection point 31, suppressing the occurrence of pellet cracks, etc. Product yield in the bonding process can be significantly improved.

[発明の効果コ 以上説明したように本発明のワイヤボンディング方法に
よれば、各ボンディング動作毎に次のボンディング動作
時におけるサーチ区間距離を補正するようにしている。
[Effects of the Invention] As explained above, according to the wire bonding method of the present invention, the search section distance for the next bonding operation is corrected for each bonding operation.

したがって、たとえ半導体ペレットが傾斜して取付けら
れたとしても良好なボンディング特性が得られ、また製
品の歩留りを大幅に向上できる。
Therefore, even if the semiconductor pellet is attached at an angle, good bonding characteristics can be obtained, and the yield of products can be significantly improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例のワイヤボンディング方法を
適用したワイヤボンディング装置の要部を示す模式図、
第2図および第3図は同実施例におけるボンディングツ
ールの動作を示す図、第4図は一般的な半導体ペレット
および基板を示す2JC 李ト禮2図、第5図乃至第7図は従来のワイヤボンディ
ング方法を説明するための図である。 1・・・基板、2・・・接着剤、3.22・・・半導体
ペレット、4・・・リード端子、5.21・・・ワイヤ
、6.31・・・基準位置、7.18・・・ボンディン
グツール、11・・・固定台、12.15・・・リニア
モータ、14・・・可動アーム、23・・・ギャップセ
ンサ、25・・・ボンディング制御回路、26・・・非
接触変位センサ、31・・・接続点、33・・・補正区
間、34・・・サーチ区間。 出願人代理人 弁理士 鈴江武彦 第1図
FIG. 1 is a schematic diagram showing the main parts of a wire bonding apparatus to which a wire bonding method according to an embodiment of the present invention is applied;
Figures 2 and 3 are diagrams showing the operation of the bonding tool in the same embodiment, Figure 4 is a diagram showing a general semiconductor pellet and substrate. FIG. 3 is a diagram for explaining a wire bonding method. DESCRIPTION OF SYMBOLS 1... Substrate, 2... Adhesive, 3.22... Semiconductor pellet, 4... Lead terminal, 5.21... Wire, 6.31... Reference position, 7.18... ...Bonding tool, 11...Fixed base, 12.15...Linear motor, 14...Movable arm, 23...Gap sensor, 25...Bonding control circuit, 26...Non-contact displacement Sensor, 31... Connection point, 33... Correction section, 34... Search section. Applicant's agent Patent attorney Takehiko Suzue Figure 1

Claims (2)

【特許請求の範囲】[Claims] (1)上面に複数の接続点を有する半導体ペレットが取
付けられた基板の上方位置に設けられた基準位置から前
記接続点までの距離を上側のサーチ区間と下側の補正区
間とに分割し、ボンディングツールを、サーチ区間内は
高速で下降させ、補正区間内は一定速度で下降さて、前
記接続点に接触させることによつて、各ワイヤを順次各
接続点に結線するようにしたワイヤボンディング方法に
おいて、前記接続点に前記ボンディングツールを接触さ
せてワイヤを結線する度に前記基準位置から前記接続点
までの距離を測定し、測定された距離および前記補正区
間の距離に基づいて次の接続点に対するボンディング動
作におけるサーチ区間距離を算出することを特徴とする
ワイヤボンディング方法。
(1) Divide the distance from a reference position provided above a substrate on which a semiconductor pellet having a plurality of connection points on the upper surface is attached to the connection point into an upper search section and a lower correction section, A wire bonding method in which each wire is sequentially connected to each connection point by lowering the bonding tool at high speed within the search section and at a constant speed during the correction section and bringing the bonding tool into contact with the connection point. Each time the bonding tool is brought into contact with the connection point to connect a wire, the distance from the reference position to the connection point is measured, and the next connection point is determined based on the measured distance and the distance of the correction section. A wire bonding method characterized by calculating a search interval distance in a bonding operation for a wire bonding method.
(2)前記補正区間の距離は、入力装置を介して外部か
ら入力設定されることを特徴とする特許請求の範囲第(
1)項記載のワイヤボンディング方法。
(2) The distance of the correction section is input and set from the outside via an input device.
The wire bonding method described in section 1).
JP61280606A 1986-11-27 1986-11-27 Wire bonding method Expired - Fee Related JPH0793339B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61280606A JPH0793339B2 (en) 1986-11-27 1986-11-27 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61280606A JPH0793339B2 (en) 1986-11-27 1986-11-27 Wire bonding method

Publications (2)

Publication Number Publication Date
JPS63136535A true JPS63136535A (en) 1988-06-08
JPH0793339B2 JPH0793339B2 (en) 1995-10-09

Family

ID=17627375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61280606A Expired - Fee Related JPH0793339B2 (en) 1986-11-27 1986-11-27 Wire bonding method

Country Status (1)

Country Link
JP (1) JPH0793339B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05102236A (en) * 1991-10-07 1993-04-23 Kaijo Corp Wirebonding device and method
US7108167B2 (en) 2003-04-14 2006-09-19 Esec Trading Sa Wire bonder with a device for determining the vectorial distance between the capillary and the image recognition system and method
US7312156B2 (en) 1996-07-08 2007-12-25 Asm International N.V. Method and apparatus for supporting a semiconductor wafer during processing

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05102236A (en) * 1991-10-07 1993-04-23 Kaijo Corp Wirebonding device and method
US7312156B2 (en) 1996-07-08 2007-12-25 Asm International N.V. Method and apparatus for supporting a semiconductor wafer during processing
US7108167B2 (en) 2003-04-14 2006-09-19 Esec Trading Sa Wire bonder with a device for determining the vectorial distance between the capillary and the image recognition system and method

Also Published As

Publication number Publication date
JPH0793339B2 (en) 1995-10-09

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