JPS63136532U - - Google Patents

Info

Publication number
JPS63136532U
JPS63136532U JP1987029035U JP2903587U JPS63136532U JP S63136532 U JPS63136532 U JP S63136532U JP 1987029035 U JP1987029035 U JP 1987029035U JP 2903587 U JP2903587 U JP 2903587U JP S63136532 U JPS63136532 U JP S63136532U
Authority
JP
Japan
Prior art keywords
mortar
discharge port
rice cake
mochi
rotating body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1987029035U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1987029035U priority Critical patent/JPS63136532U/ja
Publication of JPS63136532U publication Critical patent/JPS63136532U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図乃至第4図は本考案の第1実施例を示し
、第1図は一部切欠全体正面図、第2図は全体平
面図、第3図は全体斜視図、第4図は全体縦断面
図、第5図は第2実施例を示す正面図である。 1……臼、3……杵、5……回転体、8……排
出口、9……餅排出扉、12,12A……開閉装
置。
1 to 4 show a first embodiment of the present invention, in which FIG. 1 is a partially cutaway overall front view, FIG. 2 is an overall plan view, FIG. 3 is an overall perspective view, and FIG. 4 is an overall view. A vertical sectional view and FIG. 5 are front views showing the second embodiment. 1... Mortar, 3... Punch, 5... Rotating body, 8... Discharge port, 9... Mochi discharge door, 12, 12A... Opening/closing device.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 底部に回転体を有すると共に、側部に搗上りの
餅を排出する排出口を有する臼と、開閉装置によ
り前記排出口を自動開閉可能な餅排出扉と、前記
臼の上方において上下動する杵とを具備すること
を特徴とする餅搗機。
A mortar having a rotating body at the bottom and a discharge port for discharging the pounded rice cake at the side, a mochi discharge door that can automatically open and close the discharge port by an opening/closing device, and a pestle that moves up and down above the mortar. A rice cake pounding machine characterized by comprising:
JP1987029035U 1987-02-28 1987-02-28 Pending JPS63136532U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987029035U JPS63136532U (en) 1987-02-28 1987-02-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987029035U JPS63136532U (en) 1987-02-28 1987-02-28

Publications (1)

Publication Number Publication Date
JPS63136532U true JPS63136532U (en) 1988-09-08

Family

ID=30832553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987029035U Pending JPS63136532U (en) 1987-02-28 1987-02-28

Country Status (1)

Country Link
JP (1) JPS63136532U (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0358990U (en) * 1989-10-12 1991-06-10
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
US11557474B2 (en) 2019-07-29 2023-01-17 Asm Ip Holding B.V. Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
US11594600B2 (en) 2019-11-05 2023-02-28 Asm Ip Holding B.V. Structures with doped semiconductor layers and methods and systems for forming same
US11594450B2 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Method for forming a structure with a hole
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
US11848200B2 (en) 2017-05-08 2023-12-19 Asm Ip Holding B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US11851755B2 (en) 2016-12-15 2023-12-26 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11967488B2 (en) 2013-02-01 2024-04-23 Asm Ip Holding B.V. Method for treatment of deposition reactor
US11972944B2 (en) 2022-10-21 2024-04-30 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4927349A (en) * 1972-07-08 1974-03-11

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4927349A (en) * 1972-07-08 1974-03-11

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0358990U (en) * 1989-10-12 1991-06-10
US11967488B2 (en) 2013-02-01 2024-04-23 Asm Ip Holding B.V. Method for treatment of deposition reactor
US11851755B2 (en) 2016-12-15 2023-12-26 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11848200B2 (en) 2017-05-08 2023-12-19 Asm Ip Holding B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
US11557474B2 (en) 2019-07-29 2023-01-17 Asm Ip Holding B.V. Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
US11594450B2 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Method for forming a structure with a hole
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
US11594600B2 (en) 2019-11-05 2023-02-28 Asm Ip Holding B.V. Structures with doped semiconductor layers and methods and systems for forming same
US11972944B2 (en) 2022-10-21 2024-04-30 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
US11970766B2 (en) 2023-01-17 2024-04-30 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus

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