JPS63128632A - Terminating point detector - Google Patents
Terminating point detectorInfo
- Publication number
- JPS63128632A JPS63128632A JP27427786A JP27427786A JPS63128632A JP S63128632 A JPS63128632 A JP S63128632A JP 27427786 A JP27427786 A JP 27427786A JP 27427786 A JP27427786 A JP 27427786A JP S63128632 A JPS63128632 A JP S63128632A
- Authority
- JP
- Japan
- Prior art keywords
- coil
- intermediate cylinder
- reaction products
- end point
- gas ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 claims abstract description 16
- 150000002500 ions Chemical class 0.000 claims abstract description 9
- 238000001312 dry etching Methods 0.000 claims description 6
- 239000012495 reaction gas Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 3
- 239000007795 chemical reaction product Substances 0.000 abstract description 9
- 230000005284 excitation Effects 0.000 abstract description 3
- 238000009489 vacuum treatment Methods 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 238000005259 measurement Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 3
- 238000005375 photometry Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明はドライエツチングの終点を光学的に検出する装
置、特に測光用窓の汚れを防止する装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an apparatus for optically detecting the end point of dry etching, and particularly to an apparatus for preventing staining of a photometric window.
［従来の技術］
ドライエツチング装置は第３図に示すように真空処理室
１内に上部電極２と下部電極３とを上下に対向して配設
され、上部電極２がグランドに、また下部電極３がＲＦ
電源７にそれぞれ接続されており、両電極２．３間にプ
ラズマ６を発生させて下部電極８上のウェーハをドライ
エツチング処理するものである。ところで、このドライ
エツチング装置においてはドライエツチングの終点を検
出する必要がある。従来の終点検出装置は第３図に示す
ように真空処理室１の側壁に設けた開口に透明な測光用
窓４を設け、該測光用窓４を介して光検出器５を真空処
理室１内を透視可能に設置している。[Prior Art] As shown in FIG. 3, a dry etching apparatus is arranged in a vacuum processing chamber 1 with an upper electrode 2 and a lower electrode 3 vertically facing each other, with the upper electrode 2 connected to the ground and the lower electrode connected to the 3 is RF
They are each connected to a power source 7, and generate plasma 6 between both electrodes 2, 3 to dry-etch the wafer on the lower electrode 8. By the way, in this dry etching apparatus, it is necessary to detect the end point of dry etching. As shown in FIG. 3, the conventional end point detection device has a transparent photometric window 4 in an opening provided in the side wall of the vacuum processing chamber 1, and a photodetector 5 is connected to the vacuum processing chamber 1 through the photometric window 4. It is installed so that the inside can be seen through.
［発明が解決しようとする問題点］
上述した従来の終点検出装置では測光用窓４が真空処理
室１内に晒されているため、エツチングにより生じた反
応生成物等が測光用窓４に付着し、光検出器５への入射
光強度を低減させ、終点検出の精度を劣化させるという
欠点がある。[Problems to be Solved by the Invention] In the conventional end point detection device described above, since the photometric window 4 is exposed to the inside of the vacuum processing chamber 1, reaction products etc. generated by etching adhere to the photometric window 4. However, there is a drawback that the intensity of light incident on the photodetector 5 is reduced, and the accuracy of end point detection is degraded.
本発明の目的は終点検出精度の劣化を防止する終点検出
装置を提供することにある。An object of the present invention is to provide an end point detection device that prevents deterioration of end point detection accuracy.
［発明の従来技術に対する相違点］
上述した従来の終点検出装置に対し、本発明は反応生成
物や反応ガスイオンが測光用窓に到達しないように磁界
を用いてこれらの物質を偏向させるという独創的内容を
有する。[Differences between the invention and the prior art] In contrast to the conventional end point detection device described above, the present invention is unique in that a magnetic field is used to deflect reaction products and reaction gas ions so that they do not reach the photometric window. It has a certain content.
［問題点を解決するための手段］
本発明はドライエツチング装置でのエツチング終点を検
出する装置において、真空処理室と測光用窓との間に設
けた中間円筒と、該円筒の周囲に磁場をかけ、該真空処
理室で発生する反応生成物や反応ガスイオンを偏向させ
て測光用窓への到達を阻止する手段とを有することを特
徴とする終点検出装置である。[Means for Solving the Problems] The present invention provides a device for detecting the end point of etching in a dry etching device, which includes an intermediate cylinder provided between a vacuum processing chamber and a photometric window, and a magnetic field around the cylinder. This is an end point detection device characterized by having a means for deflecting reaction products and reaction gas ions generated in the vacuum processing chamber to prevent them from reaching a photometric window.
［実施例］ 次に本発明の実施例について図面を参照して説明する。[Example] Next, embodiments of the present invention will be described with reference to the drawings.
（実施例１）
第１図は本発明の実施例として発光分光型の終点検出装
置に応用した例である。第１図において、真空処理室１
には、上部電極２と、半導体ウェーハ８を載置した下部
電極とを有し、両電極２，３間でプラズマ６が発生され
る。プラズマ８の発光状態を観測するために真空処理室
１には中間円筒９を介して測光用窓４が設けられる。そ
して、測光用窓４には光検出器５が設置される。中間円
筒９には、コイルガイド１０とコイル１１とが設けられ
、コイル１１は励磁電源１２により励磁される。これに
より発生する磁界は反応生成物や反応ガスイオンを偏向
させて測光用窓４への付着を防止する。(Example 1) FIG. 1 shows an example in which the present invention is applied to an emission spectroscopy type end point detection device. In Figure 1, vacuum processing chamber 1
has an upper electrode 2 and a lower electrode on which a semiconductor wafer 8 is placed, and plasma 6 is generated between both electrodes 2 and 3. A photometric window 4 is provided in the vacuum processing chamber 1 via an intermediate cylinder 9 in order to observe the light emission state of the plasma 8 . A photodetector 5 is installed in the photometric window 4. The intermediate cylinder 9 is provided with a coil guide 10 and a coil 11, and the coil 11 is excited by an excitation power source 12. The magnetic field generated thereby deflects reaction products and reaction gas ions to prevent them from adhering to the photometric window 4.
（実施例２）
第２図は本発明をレーザー反射型の終点検出装置に応用
した例である。レーザー導入窓１４及び測光用窓４に中
間円筒９．コイルガイド１０．コイル１１を設け、励磁
電源１２により各々のコイルを励磁する。これにより発
生した磁界でレーザー導入窓１４及び測光用窓４に反応
生成物２反応ガスイオンが付着するのを防止する。１３
はレーザー光を示す。(Example 2) FIG. 2 is an example in which the present invention is applied to a laser reflection type end point detection device. An intermediate cylinder 9 is provided in the laser introduction window 14 and the photometry window 4. Coil guide 10. A coil 11 is provided, and each coil is excited by an excitation power source 12. The magnetic field generated thereby prevents the reaction product 2 reaction gas ions from adhering to the laser introduction window 14 and the photometry window 4. 13
indicates laser light.
以上の説明では、中間円筒の周囲にコイルを配したが、
コイルの代わりに中間円筒の外あるいは内側に永久磁石
を取り付けても同様の効果が得られる。In the above explanation, the coil was arranged around the intermediate cylinder, but
A similar effect can be obtained by attaching a permanent magnet outside or inside the intermediate cylinder instead of the coil.
［発明の効果］
以上説明したように本発明はコイルが発生する磁界によ
り、反応生成物や反応ガスの解離によるイオン等が測光
用窓に付着するのを防止することにより、通過する光の
強度が一定となり、終点検出装置の検出精度を向上でき
る効果がある。[Effects of the Invention] As explained above, the present invention uses the magnetic field generated by the coil to prevent reaction products and ions resulting from dissociation of reaction gas from adhering to the photometry window, thereby reducing the intensity of light passing through. becomes constant, which has the effect of improving the detection accuracy of the end point detection device.
第１図は本発明を応用した発光分光型の終点検出装置の
断面図、第２図は本発明をレーザー反射型の終点検出装
置に応用した例の断面図、第３図は従来の終点検出装置
の断面図である。Fig. 1 is a sectional view of an emission spectroscopic end point detection device to which the present invention is applied, Fig. 2 is a sectional view of an example in which the present invention is applied to a laser reflection type end point detection device, and Fig. 3 is a conventional end point detection device. FIG. 2 is a cross-sectional view of the device.
Claims (1)
する装置において、真空処理室と測光用窓との間に設け
た中間円筒と、該円筒の周囲に磁場をかけ、該真空処理
室で発生する反応生成物や反応ガスイオンを偏向させて
測光用窓への到達を阻止する手段とを有することを特徴
とする終点検出装置。(1) In a device for detecting the end point of etching in a dry etching device, an intermediate cylinder is provided between a vacuum processing chamber and a photometric window, and a reaction occurs in the vacuum processing chamber by applying a magnetic field around the cylinder. An end point detection device comprising means for deflecting product or reaction gas ions to prevent them from reaching a photometric window.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27427786A JPS63128632A (en) | 1986-11-18 | 1986-11-18 | Terminating point detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27427786A JPS63128632A (en) | 1986-11-18 | 1986-11-18 | Terminating point detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63128632A true JPS63128632A (en) | 1988-06-01 |
Family
ID=17539410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27427786A Pending JPS63128632A (en) | 1986-11-18 | 1986-11-18 | Terminating point detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63128632A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6503364B1 (en) * | 1999-09-03 | 2003-01-07 | Hitachi, Ltd. | Plasma processing apparatus |
| JP2008542780A (en) * | 2005-06-08 | 2008-11-27 | アルカテル−ルーセント | Gas control device |
| CN115488505A (en) * | 2022-09-27 | 2022-12-20 | 哈尔滨工业大学（威海） | Electromagnetic device and method for solving problem of energy shielding of magnesium alloy negative-pressure laser welding |
-
1986
- 1986-11-18 JP JP27427786A patent/JPS63128632A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6503364B1 (en) * | 1999-09-03 | 2003-01-07 | Hitachi, Ltd. | Plasma processing apparatus |
| JP2008542780A (en) * | 2005-06-08 | 2008-11-27 | アルカテル−ルーセント | Gas control device |
| CN115488505A (en) * | 2022-09-27 | 2022-12-20 | 哈尔滨工业大学（威海） | Electromagnetic device and method for solving problem of energy shielding of magnesium alloy negative-pressure laser welding |
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