JPS63126144A - Display electron tube device - Google Patents

Abstract

PURPOSE:To fix an electron beam quantity for making it possible to prevent burning of a phosphor and to fix electrode voltage of a focusing system such as a focus and astigmatism. CONSTITUTION:Plural semiconductor elements 2 generating luminous output in response to a light to be obtained from a phosphor screen 13 basing on an electron beam 11 or the projection of the electron beam 11 and a means to control a current or voltage of the semiconductor element 2 in order to control a light generated from the semiconductor element 2 are provided. In case the semiconductor element 2 is a composite body of a photoelectric conversion semiconductor element and a semiconductor luminous element, a light of the phosphor screen 13 is inputted into the photoelectric conversion semiconductor element and this is converted into the current to be inputted into the semiconductor luminous element for being able to obtain photo-output in the position corresponding to the projection of the electron beam 11. A level of the photo-output, that is brightness, is controlled by voltage or the current of the semiconductor element. Thereby, it is needless to perform brightness adjustment on the side of a CRT 1, thus being able to fix a quantity of the electron beam.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of application in M industry] The present invention relates to a display electron tube device for analyzing waveform observation, single image display, etc.

[Conventional technology and its problems]

With conventional CRTs (cathode ray tubes) for oscilloscopes, the brightness of the bright line on the screen is determined by the amount of beam current! Is it a waveform with a low repetition frequency? During observation, if the brightness was improperly adjusted and left at a high brightness state, there was a risk that the phosphor would burn out. Furthermore, when the beam current changes, the focus and the stigmatism (aberration) shift, so it was necessary to change the focus and the stigmatism voltage together with the beam 1'' flow.

Also, to reduce brightness during high-speed sweep.

If the accelerating voltage was increased, there was a risk that the phosphor would be burnt out. Another method is to use a secondary electron multiplier to increase the beam current and increase the brightness, but in this case as well, there is a risk that the phosphor will burn out.

SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a display electron tube device that can control brightness without relying on electron beam control aK.

[Zhao point? In order to solve the problem and achieve the above object, the present invention includes an electron gun that generates an electron beam, an electron beam emitted from the electron gun, a first deflection means for deflecting the electron beam in a first direction in a plane perpendicular to the traveling direction of the electron beam; a second deflection means for deflecting the electron beam in a second direction perpendicular to the first direction; a number of semiconductor elements generating light output in response to the electron beam deflected by the first and second deflection means or light obtained from the phosphor screen based on the projection of the electron beam; and a means for controlling the current or voltage of the semiconductor element in order to control the light emitted by the semiconductor element. A combination of a device and a semiconductor light emitting device such as a light emitting diode, in the case of a T-stone, the light from the phosphor screen is input to the photoelectric conversion semiconductor device, which is converted into electric current and input to the semiconductor light emitting device. do. KonK
Therefore, the light output can be obtained at a position corresponding to the child beam projection.

When controlling the level of this optical output, that is, the brightness (variable or on/off control), the voltage or current of the semiconductor element is controlled. If the semiconductor element is a semiconductor laser, the electron beam is Project directly onto a semiconductor laser to obtain optical output.

〔Example〕

Next, a display electron tube device according to an embodiment of the present invention shown in FIGS. 1 to 3 will be described. The display electron tube device shown in FIG. 1 has a large number of semiconductor elements 2 on the tube surface of a typical oscilloscope. 2nd grid 6,
An electron gun consisting of a 17th node 7° and a 27th node 8, a pair of vertical deflection plates 9. It has a pair of horizontal deflection plates 10 in sequence,
An electron beam 11 is applied to a phosphor layer 1 coated on a glass substrate 2.
The structure is written so that it is projected onto 3. In addition.

The power node 4 and the second grid 5, 6 constitute a triode section, and the second grid 6 and the first and 27th nodes 7.
8 constitutes an electrostatic focusing electron lens. Generally, the first
7 Node 7 is a focus electrode.

The 27th node 8 is called Ryo Stegmatism 10.

The semiconductor element 2 is a combination of a phototransistor 414 and a light emitting diode 15, and is arranged opposite to the phosphor #13 with the glass film 12 interposed therebetween. The semiconductor element 2 provided for each pixel is separated by an insulator 16.
A light-transmissive face plate 17 extending from the outer IVC outer wall 3VC is disposed 1##. The phosphor layer J3 emits light in response to the electron beam IIK, and the phototransistor 14 conducts in response to the light from the phosphor layer 13.
5 emits light in response to the conduction of the phototransistor I4.

Therefore, the combination of the phosphor layer 13, the phototransistor 14, and the light emitting diode 5 can also be called an electron beam responsive display element.

A vertical deflection circuit 9 is connected between the observation signal input terminal 18 and the vertical deflection plate 9. This vertical deflection circuit 19 has the same configuration as that of a known oscilloscope.
A signal for deflecting the electron beam in the vertical direction (first direction) is applied to the vertical side plate in response to a human input signal.

The horizontal deflection circuit 20 connected to the horizontal deflection plate 10 includes a circuit that generates a constant repeating 8-wavenumber sweep signal, and a sawtooth wave is applied to the horizontal small amount 810 .

11+control drive circuit 21 connected to the semiconductor element 2.

This applies a driving voltage to the semiconductor element 2 and controls the current flowing through the semi-conductor element 2. In addition, in order to cycle the driving of the semiconductor element 2 during the seven blanking periods, a constraint is applied.゛The horizontal deflection circuit 20 is connected to the line 22 in the drive circuit 21.
&Cii. A line 22 is supplied with a sweep gate signal used in the sweep circuit.

FIG. 2 is a book showing in detail the structure of the semiconductor device 20 shown in FIG. One electrode 23 for supplying voltage to the semiconductor element 2 consisting of a series connection of a phototransistor 14 and a light emitting diode 15 is embedded in the glass plate 2;
The other 24 JRIJ poles are embedded in the face plate 17.

FIG. 3 shows the electrical connection of the semiconductor element 2. The phototransistor 14 consists of a p-type emitter 25, an n-type base 26, and a p-type collector 27, and the structure is made by connecting the vines to the pole 28 and the collector electrode. 29.

The light emitting diode 15 is composed of an n-shaded region 3I and a p-shaded region 32, and has a 7-node electrode 33 and a cathode t&34. The collector t% 29 and the cathode electrode 34 of the light emitting diode 15 are connected in series, and the switch 35 and the power source are connected between the emitter VT pole 28 of the phototransistor 14 and the 7 node electrode 33 of the light emitting diode 15. 36 and a variable resistor 37 are connected.

The switch 35, power supply 36, and variable resistor 37 constitute the control drive circuit 2I, and the switch 35 is turned on only during the unblanking period in response to the sweep gate signal. , a power source 36 is used to supply a driving current to the phototransistor 14 and the light emitting diode 15. The variable resistor 37 is for brightness adjustment and is used to adjust the current flowing through one light emitting diode 15 and change the intensity of the output light 38 of one light emitting diode 15.

(Operation) The scanning of the phosphor layer 13 by the electron beam IIK is carried out in exactly the same way as in the conventional oscilloscope.However, the brightness adjustment and amplifier ranking or blanking control in CRTI are unnecessary. .

Therefore, even if the amount of electron beam is a slow sweep.

The setting is made so that the phosphor layer 13 will not be burned out.

Since the phototransistor 14 is used as a photoresponsive switch, the electron beam beam is set at the 7° level at which the phototransistor 14 turns on. When a light input is given to the phototransistor 14 and it is turned on, 1! source 36, variable resistor 37. Power supply 33) Light emitting diode 15. A closed circuit consisting of the phototransistor] 4, the electrode 28, and the switch 35 is formed, and the light emitting diode 15 outputs light 38. The intensity or brightness of the output light 38 of the light emitting diode 15 corresponds to the setting of the variable resistor 37. In this example, since the amount of electron beam 11 is kept low, in order to obtain high brightness, light must be amplified in the semiconductor element 20 portion. This optical amplification can be easily achieved by using one light emitting diode 15 with high brightness.

In this display electron tube device, C) there is no need to perform brightness adjustment on the iTI side, and the amount of electron beam can be fixed. It is no longer necessary to adjust the focus voltage and the stigmatism reduction in accordance with the brightness adjustment as in the conventional device, and it is possible to fix the adjustment and the like.

[9Σ Example] The present invention is not limited to the embodiments described above, but can be modified, for example, as follows.

(11 As shown in FIG. 4, three types of light emitting diodes 15a to 15h and 15C with different emission colors are arranged in a unit pixel,
Connect the phototransistors independently.

Switches 35a, 35h-35c, Ml source 36a.

36h-36cm variable resistors 37a, 37h, and 37C may be provided independently and color display may be performed by selectively emitting light from five light-emitting diodes 15a-15b-15c.

(2) As shown in FIG. 5, a laser diode 40 (half-24 laser) is arranged for each pixel inside the face plate 17, and the electron beam 11 is projected onto the laser diode 40 to amplify and emit light.

Alternatively, output light 38 may be obtained. The intensity of the output light 38 of the laser diode 40 is adjusted by a circuit consisting of a switch 35, a tortoise 36, and a variable resistor 37, as in the case of FIG.

(3) Instead of adjusting the output light 38 using the variable f resistor 37, it may be done by adjusting the voltage of the power source 36. Further, the configuration is such that the amount of electron beam in the CRTI can be changed within a range that does not cause burnout of the phosphor layer 13,
The intensity of the output light 38 may be adjusted by both the amount of the electron beam and the driving current of the semiconductor light emitting device.

(4) In FIG. 3, the phototransistor 14 and the light emitting diode 5 are connected by the electrodes 29 and 34, but the phototransistor 14 and the light emitting diode 15 are connected in the same semiconductor substrate.
may also be provided. In the case, the phototransistor 14 may have a photodiode configuration. Also 1 light emitting diode 1
5 may be a laser diode.

(51yfL CRTIIC in Figure 1 shown logically)
A second stage accelerating electrode, a scanning magnifying quadrupole lens, etc. may be provided.

〔Effect of the invention〕

As is clear from the above, according to the present invention, since brightness adjustment is performed by a semiconductor light emitting element, it is possible to fix the electron beam radius. Therefore.

It becomes possible to prevent burnout of the phosphor and to fix the electrode voltage for focusing systems such as focus and stigmatism.

Furthermore, it is also possible to increase the brightness by utilizing the optical amplification effect.

[Brief explanation of the drawing]

FIG. 1 is a diagram showing the principle of a display electron tube device according to another embodiment of the present invention. FIG. 2 is a sectional view clearly showing the tube surface portion of FIG. wJ1. FIG. 3 is a diagram showing electrical connections of semiconductor element portions. FIG. 4 is a front view showing a semiconductor element portion of a modified example. FIG. 5 is a sectional view showing a laser diode portion of a modified example. 1...C)tT, 2...Semiconductor element, 9...Vertical deflection plate. 10... Horizontal deflection plate, 11... Electron beam, 13.
...phosphor layer, 14... phototransistor, 15...
- Light emitting diode, 37...variable resistor. Agent: Nori Takano Figure 3 L

Claims (3)

[Claims] (1) an electron gun that generates an electron beam; a first deflection means that deflects the electron beam sent out from the electron gun in a first direction in a plane perpendicular to the traveling direction of the electron beam; a second deflection means for deflecting the electron beam in a second direction orthogonal to the first direction; and based on the electron beam deflected by the first and second deflection means or the projection of the electron beam. A display comprising a number of semiconductor elements generating light output in response to light obtained from a phosphor screen, and means for controlling the current or voltage of said semiconductor elements to control the light generated from said semiconductor elements. Electron tube device. (2) A patent claim in which the semiconductor element is a combination of a photoelectric conversion semiconductor element that responds to light emitted from a phosphor screen and a light emitting semiconductor element that generates light in response to the current of the photoelectric conversion semiconductor element. The display electron tube device according to item 1. (3) The display electron tube device according to claim 1, wherein the semiconductor element is a semiconductor laser that responds to the electron beam.