JPS63121330A - Transmission performance monitor circuit of radio equipment - Google Patents

Transmission performance monitor circuit of radio equipment

Info

Publication number
JPS63121330A
JPS63121330A JP61266659A JP26665986A JPS63121330A JP S63121330 A JPS63121330 A JP S63121330A JP 61266659 A JP61266659 A JP 61266659A JP 26665986 A JP26665986 A JP 26665986A JP S63121330 A JPS63121330 A JP S63121330A
Authority
JP
Japan
Prior art keywords
voltage
high frequency
temperature
transmission
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61266659A
Other languages
Japanese (ja)
Other versions
JPH0630473B2 (en
Inventor
Naoki Hirasawa
直樹 平澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP61266659A priority Critical patent/JPH0630473B2/en
Publication of JPS63121330A publication Critical patent/JPS63121330A/en
Publication of JPH0630473B2 publication Critical patent/JPH0630473B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Monitoring And Testing Of Transmission In General (AREA)
  • Transmitters (AREA)

Abstract

PURPOSE:To accurately identify transmitted high frequency outputs in a wide temperature range even if a high frequency power is low by compensating temperatures in both high frequency detection voltage and reference voltage and supplying them to a voltage comparator. CONSTITUTION:The reference voltage VD3 obtained from a terminal 13 shows the alteration of temperature as well as the detection voltage VD2 at the time when transmission is ON or the detection voltage VD1 at the time when transmission is OFF by using the same kind for the diodes 11 and 12. If the resistance value of a resistance 14 is decided such as VD1<VD3<VD2 at a certain temperature, the alteration of temperature like figure A is obtained to small number of high frequency transmitted outputs in the wide temperature range. Since the reference voltage and the detection voltage are compensated with the same power source terminal 5, the influence caused by the alteration of temperature in the voltage stabilization circuit of the power source V1 is hardly produced.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 、不発明は無線装置の送信動作監視回路、特に送信出力
端子における高周波出力の有無を検出する送信動作監視
回路に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a transmission operation monitoring circuit for a wireless device, and particularly to a transmission operation monitoring circuit for detecting the presence or absence of high frequency output at a transmission output terminal.

〔従来の技術〕[Conventional technology]

一般に、この種の送信動作監視回路は送信をオフしてい
るにもかかわらず電波を発射してしまったシ、送信をオ
ンしているにもかかわらず電波が出ていないなどという
ような異常を検出することにより不要電波の発射を防止
したり、無線機の故障を早期に発見する目的で設けられ
ている。
Generally, this type of transmission operation monitoring circuit detects abnormalities such as radio waves being emitted even though transmission is off, or no radio waves being emitted even though transmission is on. This detection is intended to prevent the emission of unnecessary radio waves and to detect malfunctions of radio equipment at an early stage.

従来のむの種の回路を第3図に示す。この回路において
、1は送信出力端子、3は送信電力増幅部、4は高周波
検出コンデンサ、11は検波用ダイオード、18は電圧
比較器、19は高周波出力の有無の識別出力端子である
A conventional muno-tane circuit is shown in FIG. In this circuit, 1 is a transmission output terminal, 3 is a transmission power amplification section, 4 is a high frequency detection capacitor, 11 is a detection diode, 18 is a voltage comparator, and 19 is an output terminal for identifying the presence or absence of high frequency output.

以下第3図の回路の動作を簡単に説明する。端子1に現
われた高周波電圧の一部はダイオード11により検波さ
れて直流電圧を発生する。いま。
The operation of the circuit shown in FIG. 3 will be briefly explained below. A portion of the high frequency voltage appearing at the terminal 1 is detected by the diode 11 to generate a DC voltage. now.

端子17の電圧を■D2とすると、高周波が存在する時
は ■D2=vD1+vR1 となる。ここで、VD、は電源端子5から流れこむ直流
バイアス電流によって生ずる電圧、■8.は高周波検波
電圧である。一方、送信オフ時には端子2に高周波電圧
が存在しないため、検波電圧v、、=Qとなシ、端子1
7の電圧はVD、になる。
Assuming that the voltage at the terminal 17 is ■D2, when a high frequency is present, ■D2=vD1+vR1. Here, VD is the voltage generated by the DC bias current flowing from the power supply terminal 5; is the high frequency detection voltage. On the other hand, when transmission is off, there is no high-frequency voltage at terminal 2, so the detected voltage v, , = Q, and terminal 1
The voltage at point 7 becomes VD.

また、端子24には電源v2へ通じる端子22の電圧を
抵抗分割することにより電圧vD3が得られる。
Further, a voltage vD3 is obtained at the terminal 24 by resistance-dividing the voltage at the terminal 22 connected to the power supply v2.

端子17.22がそれぞれ電圧比較器18の正相入力、
逆相入力へ接続されているので、端子19にはVD2と
vD30大小比tfl K ヨ’) 、 H(High
) 。
Terminals 17 and 22 are positive phase inputs of the voltage comparator 18, respectively;
Since it is connected to the negative phase input, terminal 19 has the VD2 and vD30 magnitude ratio tfl K YO'), H (High
).

L (Low)レベルが出力される。すなわち、抵抗2
3.25の分圧比を適切に選んで。
L (Low) level is output. That is, resistance 2
Choose a partial pressure ratio of 3.25 appropriately.

VD1<VD3<VD2 となるように設定すれば、送信オフ時にはLレベル、送
信オン時にはHレベルが出力端子19に得られる。
By setting VD1<VD3<VD2, an L level is obtained at the output terminal 19 when transmission is off, and an H level is obtained at the output terminal 19 when transmission is on.

第3図において、ダイオード12およびその周辺回路は
ダイオード11の温度補償回路であり。
In FIG. 3, the diode 12 and its peripheral circuit are a temperature compensation circuit for the diode 11.

VD2の温度による変動を少なくするためのものである
。端子5は電圧V、の直流電源に接続され、抵抗6を介
してダイオード11.12にKmバイアスを供給してい
る。9は高周波チョークコイル。
This is to reduce fluctuations in VD2 due to temperature. Terminal 5 is connected to a DC power supply with voltage V, and supplies Km bias to diodes 11 and 12 via resistor 6. 9 is a high frequency choke coil.

8は高周波パイi4スコンデンサである。ここで。8 is a high frequency piston capacitor. here.

ダイオード11へ直流バイアスを与えているのは。What gives the diode 11 a DC bias?

送信電力増幅部3において送信出力電力を一定に保つた
めの自動利得制御回路の高周波出力検出電圧としても端
子17の電圧を利用することが多いが、その際に低い送
信出力でも直線性良く検波電圧を得るためである。また
、高周波電圧の検出にコンデンサ4を用いているが、他
の高周波結合回路を用いても動作は同じである。
The voltage at the terminal 17 is often used as the high frequency output detection voltage of the automatic gain control circuit to keep the transmission output power constant in the transmission power amplification section 3. This is to obtain. Further, although the capacitor 4 is used to detect the high frequency voltage, the operation is the same even if other high frequency coupling circuits are used.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述した従来の送信動作監視回路は、扱う高周波電力が
大きく、大きな検波電圧が得られる場合゛には問題ない
が、高周波出力電力が小さくなシ。
The above-mentioned conventional transmission operation monitoring circuit has no problem if the high frequency power it handles is large and a large detected voltage can be obtained, but if the high frequency output power is small.

大きな検波電圧が得られない場合には、送信オン時とオ
フ時の検波電圧の差が小さくなって、温度によっては回
路が誤動作する可能性がある。すなわち、電圧比較器の
基準電圧VD、が一定であっても、送信オン時の検波電
圧vD2と送信オフ時の電圧VD、との差が小さいため
に。
If a large detected voltage cannot be obtained, the difference between the detected voltage when the transmission is on and when the transmission is off becomes small, and the circuit may malfunction depending on the temperature. That is, even if the reference voltage VD of the voltage comparator is constant, the difference between the detected voltage vD2 when transmission is on and the voltage VD when transmission is off is small.

VD1<VD5<VD2 の条件を満たすVD3の範囲が狭く、ダイオード特性の
温度変化によ!+ vof > vDffとなりて送信
オフ時にもかかわらず高周波出力電力と判断してしまう
ことになる。同様に、 VD5 > VD2となって送
信オン時にもかかわらず高周波出力無しと判断してしま
う現象が起り得るという問題点がある。
The range of VD3 that satisfies the condition of VD1<VD5<VD2 is narrow and due to temperature changes in diode characteristics! + vof > vDff, and the output power is determined to be high frequency output power even though the transmission is off. Similarly, there is a problem that VD5 > VD2 and a phenomenon may occur in which it is determined that there is no high frequency output even though transmission is on.

勿論、そのような誤動作を防ぐために温度補償回路が備
わっているが、それはあくまでも温度によるVD1. 
V□の変化を軽減する程度のものであり1回路定数のば
らつきを含め、広い温度範囲にわたりて根本的に誤動作
をなくすためのものではない。更に基準電圧となるVD
5も電圧安定化回路の温度係数により事実上変動する。
Of course, a temperature compensation circuit is provided to prevent such malfunctions, but this only applies to VD1.
This is only to reduce the change in V□, and is not intended to fundamentally eliminate malfunctions over a wide temperature range, including variations in circuit constants. Furthermore, VD which becomes the reference voltage
5 also effectively varies depending on the temperature coefficient of the voltage stabilizing circuit.

このように。in this way.

従来の回路では広い温度範囲にわたりて小さな高周波出
力電力をも確実に検出することは困難であった。
With conventional circuits, it is difficult to reliably detect even small high-frequency output power over a wide temperature range.

本発明は従来のもののこのような問題点を解決し、低い
高周波出力電力でも広い温度範囲にわたシ正確に送信高
周波出力の有無を識別できるようにしたものである。
The present invention solves these problems of the conventional devices and makes it possible to accurately identify the presence or absence of transmitted high-frequency output over a wide temperature range even with low high-frequency output power.

〔問題点を解決するための手段〕[Means for solving problems]

本発明によれば、無線装置の送信出力端の高周波電圧を
検出してその送信動作を監視する回路において、前記高
周波電圧を検波するために設けられ、直流バイアス電流
の流れる第1のダイオードと、該第1のダイオードを温
度補償するために設けられ、直流バイアス電流の流れる
第2のダイオ  ・−ドとを有し、前記第1のダイオー
ドの為予電圧と第2のダイオードの端子電圧の差によっ
て前記高周波電圧の存在を判定することを特徴とする無
線装置の送信動作監視回路が得られる。
According to the present invention, in a circuit that detects a high frequency voltage at a transmission output end of a wireless device and monitors its transmission operation, a first diode provided for detecting the high frequency voltage and through which a DC bias current flows; a second diode provided to temperature compensate the first diode and through which a DC bias current flows, the difference between the prevoltage of the first diode and the terminal voltage of the second diode; A transmission operation monitoring circuit for a wireless device is obtained, which is characterized in that it determines the presence of the high-frequency voltage.

すなわち本発明による送信動作監視回路は、従来温度補
償されていない電圧比較器の基準電圧も温度補償しよう
というものである。この場合の温度補償とは基準電圧v
D3を温度によらず一定に保つのが目的ではなく、基準
電圧vD5と送信オン時の検波電圧vD2との差(v、
)2−VD、)や送信オフ時の検波電圧VD、との差(
VD、−vD、)を一定に保つのが目的である。例えば
、検波電圧が正の温度係数を持つ場合1 vD5の温度
変化を第4図のように温度補償するものである。
That is, the transmission operation monitoring circuit according to the present invention is intended to compensate for the temperature of the reference voltage of the voltage comparator, which has not been temperature compensated in the past. Temperature compensation in this case is the reference voltage v
The purpose is not to keep D3 constant regardless of temperature, but to maintain the difference (v,
)2-VD, ) and the detection voltage VD when transmission is off (
The purpose is to keep VD, -vD, ) constant. For example, when the detected voltage has a positive temperature coefficient, a temperature change of 1 vD5 is compensated for as shown in FIG.

一般に、V、VD2が温度で変動する主な原因はダイオ
ードの特性の温度による変化である。よって、従来はダ
イオードを一つ追加してVDl、VDlの温度変動を補
償していたが1本発明ではそのダイオードを用いてV 
もv 、■ と同じようなり5      DI   
   D2温度係数をもつように補償するものである。
Generally, the main reason why V and VD2 fluctuate with temperature is a change in diode characteristics due to temperature. Therefore, in the past, one diode was added to compensate for temperature fluctuations in VDl and VDl, but in the present invention, the diode is used to compensate for temperature fluctuations in VDl and VDl.
5 DI is the same as v and ■.
This is to compensate to have a D2 temperature coefficient.

〔発明の実施例〕[Embodiments of the invention]

次に1本発明について図面を参照して説明する。 Next, one embodiment of the present invention will be explained with reference to the drawings.

第1図は本発明の一実施例の回路図である。この例によ
れば、電圧比較器18の基単電圧VD3は抵抗分割では
なく、ダイオード12の端子13から得られる。端子1
3から得られる基鵡電圧vD3はダイオード11.12
に同一品種を使用することにより送信オン時の検波電圧
vD2や送信オフ時の検波電圧VD、と同様な温度変化
を示し、ある温度で VDl<vD3<VDl となるように抵抗14の抵抗値を定めれば、少ない高周
波送信出力に対しても、広い温度範囲に対しても第4図
のような温度変化が得られる。
FIG. 1 is a circuit diagram of an embodiment of the present invention. According to this example, the base voltage VD3 of the voltage comparator 18 is obtained from the terminal 13 of the diode 12 rather than by resistance division. Terminal 1
The basic voltage vD3 obtained from 3 is the diode 11.12
By using the same type of resistor 14, the resistance value of the resistor 14 can be adjusted so that the detected voltage vD2 when transmitting is on and the detected voltage VD when transmitting is off exhibits the same temperature change, and VDl<vD3<VDl at a certain temperature. If determined, the temperature change as shown in FIG. 4 can be obtained even for a small high frequency transmission output and for a wide temperature range.

また、基単電圧も検波電圧も同一の電源端子5よシ補償
されているので、電源V、の電圧安定化回路の温度変化
にも影響を受けにくい構成である。
Further, since both the base voltage and the detected voltage are compensated by the same power supply terminal 5, the configuration is not easily affected by temperature changes in the voltage stabilizing circuit of the power supply V.

第2図は高周波の結合回路として第1図のようなコンデ
ンサ結合ではなく、伝送線路21による高周波結合回路
を用いた場合の実施列である。また、ダイオード11.
12の向きが第1図の例とは逆であるが、これは端子5
を負電源へ接続することを意味する。すなわち、この場
合、端子17に表われる送信オン時の電圧vD2.送信
オフ時の電圧vDI #端子130基準電圧vD5のそ
れぞれの関係は VDl〉■D5〉VDl となるが、動作原理は第1図の場合と同じである。
FIG. 2 shows an example in which a high-frequency coupling circuit using a transmission line 21 is used instead of a capacitor coupling as shown in FIG. 1 as a high-frequency coupling circuit. In addition, the diode 11.
Although the direction of terminal 12 is opposite to that in the example shown in FIG.
This means connecting to the negative power supply. That is, in this case, the voltage vD2. appearing at the terminal 17 when the transmission is turned on. The relationship between the voltage vDI when the transmission is off and the reference voltage vD5 of the # terminal 130 is VDl>D5>VDl, but the operating principle is the same as in the case of FIG.

〔発明の効果〕〔Effect of the invention〕

以上説明したように1本発明によれば、高周波検波電圧
と基単電圧の両方を温度補償して電圧比較器へ入力させ
ることによシ、低い高周波出力電力でも、広い温度範囲
にわたシ正確に送信高周波出力の有無を識別することが
できるという効果がある。
As explained above, according to the present invention, by temperature-compensating both the high-frequency detection voltage and the base single voltage and inputting them to the voltage comparator, even low high-frequency output power can be accurately maintained over a wide temperature range. This has the effect of being able to identify the presence or absence of a transmitted high-frequency output.

【図面の簡単な説明】 第1図は本発明の第1の実施例を示す回路図。 第2図は本発明の第2の実施例を示す回路図、第3図は
従来技術による回路図、第4図は検波電圧および基単電
圧の温度特性の例を示すグラフである。 図において、1は高周波出力端子、2,7゜10.13
,17.22.24は端子、3は高周波電力増幅部、4
.8.15はコンデンサ、5は電源端子、6,14,1
6,20,23.25は抵抗、9はチョークコイル、1
1.12はダイオード、18は電圧比較器、19は検出
出力端子。 21は伝送線路である。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a circuit diagram showing a first embodiment of the present invention. FIG. 2 is a circuit diagram showing a second embodiment of the present invention, FIG. 3 is a circuit diagram according to the prior art, and FIG. 4 is a graph showing an example of the temperature characteristics of the detected voltage and the base voltage. In the figure, 1 is a high frequency output terminal, 2,7°10.13
, 17.22.24 are terminals, 3 is a high frequency power amplification section, 4
.. 8.15 is a capacitor, 5 is a power supply terminal, 6, 14, 1
6, 20, 23.25 are resistors, 9 is choke coil, 1
1.12 is a diode, 18 is a voltage comparator, and 19 is a detection output terminal. 21 is a transmission line.

Claims (1)

【特許請求の範囲】[Claims] 1、無線装置の送信出力端の高周波電圧を検出してその
送信動作を監視する回路において、前記高周波電圧を検
波するために設けられ、直流バイアス電流の流れる第1
のダイオードと、該第1のダイオードを温度補償するた
めに設けられ、直流バイアス電流の流れる第2のダイオ
ードとを有し、前記第1のダイオードの端子電圧と第2
のダイオードの端子電圧の差によって前記高周波電圧の
存在を判定することを特徴とする無線装置の送信動作監
視回路。
1. In a circuit that detects a high frequency voltage at the transmission output end of a wireless device and monitors its transmission operation, a first circuit is provided to detect the high frequency voltage and through which a DC bias current flows.
and a second diode provided for temperature compensating the first diode and through which a DC bias current flows, the terminal voltage of the first diode and the second diode are provided to compensate for the temperature of the first diode.
A transmission operation monitoring circuit for a wireless device, characterized in that the presence of the high frequency voltage is determined based on a difference in terminal voltage of a diode.
JP61266659A 1986-11-11 1986-11-11 Radio device transmission operation monitoring circuit Expired - Lifetime JPH0630473B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61266659A JPH0630473B2 (en) 1986-11-11 1986-11-11 Radio device transmission operation monitoring circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61266659A JPH0630473B2 (en) 1986-11-11 1986-11-11 Radio device transmission operation monitoring circuit

Publications (2)

Publication Number Publication Date
JPS63121330A true JPS63121330A (en) 1988-05-25
JPH0630473B2 JPH0630473B2 (en) 1994-04-20

Family

ID=17433902

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61266659A Expired - Lifetime JPH0630473B2 (en) 1986-11-11 1986-11-11 Radio device transmission operation monitoring circuit

Country Status (1)

Country Link
JP (1) JPH0630473B2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240184A (en) * 1975-09-25 1977-03-28 Automob Antipollut & Saf Res Center Temperature compensation circuit for pressure transducers
JPS57154919A (en) * 1981-03-20 1982-09-24 Hitachi Denshi Ltd Detecting system for high frequency faulty power level
JPS61102577A (en) * 1984-10-25 1986-05-21 Matsushita Electric Works Ltd Photoelectric switch for distance detection

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240184A (en) * 1975-09-25 1977-03-28 Automob Antipollut & Saf Res Center Temperature compensation circuit for pressure transducers
JPS57154919A (en) * 1981-03-20 1982-09-24 Hitachi Denshi Ltd Detecting system for high frequency faulty power level
JPS61102577A (en) * 1984-10-25 1986-05-21 Matsushita Electric Works Ltd Photoelectric switch for distance detection

Also Published As

Publication number Publication date
JPH0630473B2 (en) 1994-04-20

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