JPS63114254A - Linear image sensor - Google Patents
Linear image sensorInfo
- Publication number
- JPS63114254A JPS63114254A JP61260401A JP26040186A JPS63114254A JP S63114254 A JPS63114254 A JP S63114254A JP 61260401 A JP61260401 A JP 61260401A JP 26040186 A JP26040186 A JP 26040186A JP S63114254 A JPS63114254 A JP S63114254A
- Authority
- JP
- Japan
- Prior art keywords
- image sensor
- linear image
- light sensitive
- bent
- register
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000005452 bending Methods 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14825—Linear CCD imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明はリニアイメージセンサに係り、特に原稿を１：
１の関係で読取るいわゆる密着型リニアイメージセンサ
に関するものである。[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) The present invention relates to a linear image sensor, and in particular, to a linear image sensor that detects an original document.
The present invention relates to a so-called contact type linear image sensor that reads according to the relationship shown in FIG.
（従来の技術）
リニアイメージセンサは複写機等において多用されてい
る。従来のリニアイメージセンサは長いものを作ること
が困難であるため、原稿からの反射光を光学系を用いて
縮小してリニアイメージセンサ上に投影するようにして
いる。(Prior Art) Linear image sensors are widely used in copying machines and the like. Since it is difficult to make a conventional linear image sensor long, the reflected light from the document is reduced using an optical system and projected onto the linear image sensor.
第３図は従来のリニアイメージセンサの一例を示す平面
図であって基板１０上に複数の感光画素１が基板の長さ
一杯に一列状に設けられて感光画素列２を形成しており
、その−刃側には読出しレジスタ３が平行して形成され
、その一端部に出力回路が設けられて画像出力を取出し
ている。FIG. 3 is a plan view showing an example of a conventional linear image sensor, in which a plurality of photosensitive pixels 1 are provided on a substrate 10 in a line along the entire length of the substrate to form a photosensitive pixel row 2. A readout register 3 is formed in parallel on the negative blade side, and an output circuit is provided at one end of the readout register 3 to take out an image output.
このようなリニアイメージセンサでは読取り範囲が限ら
れ、また解像度も十分でないため、り二アイメージセン
サを複数個直線状に並べたインライン型リニアイメージ
センサが用いられる。これは第４図に示されるように感
光画素列２□、２゜をそれぞれ有する二つのリニアイメ
ージセンサ６および７をその一端部をできるだけ近接さ
せて配設したものであり、両感光画素列の近接度が大き
いほど得られる画像の連続性が確保される。Since such a linear image sensor has a limited reading range and insufficient resolution, an in-line linear image sensor in which a plurality of linear image sensors are arranged in a straight line is used. As shown in FIG. 4, two linear image sensors 6 and 7 having photosensitive pixel rows 2□ and 2°, respectively, are arranged with their one ends as close as possible, and both photosensitive pixel rows are The greater the proximity, the more continuity of the obtained image is ensured.
しかしながら、このような従来のインライン型リニアイ
メージセンサでは近接配置を行う必要上、暗時電荷を取
出すためのいわゆるダミー画素を設けることができない
。したがって感光画素１で発生、蓄積されて出力される
電荷は光が入射して発生する信号電荷と、光とは無関係
に暗時でも発生する暗時電荷とが混在したものとなって
おり、しかもこの暗時電荷量は周囲温度およびセンサ温
度に依存するため、安定した出力を得るのは困難となっ
ている。すなわち、従来のリニアイメージセンサで出力
信号から暗時電荷量の出力を差引いて信号型荷分の出力
を得るためには、原稿読取り前に光を照射せずに信号出
力を読出してメモリに保持し、次に原稿を読取って得ら
れた信号出力からメモリに保持しである暗時電荷量を差
引くようにするが、原稿読取りの開始から終了までにセ
ンサおよび周囲の温度が変化するため補正は完全ではな
い。However, in such a conventional in-line linear image sensor, it is not possible to provide a so-called dummy pixel for extracting dark charges because of the necessity of close arrangement. Therefore, the charges generated, accumulated and output by the photosensitive pixel 1 are a mixture of signal charges generated when light is incident and dark charges that are generated even in the dark regardless of light. Since this dark charge amount depends on the ambient temperature and sensor temperature, it is difficult to obtain a stable output. In other words, in order to obtain the signal type output by subtracting the dark charge amount output from the output signal with a conventional linear image sensor, the signal output must be read out and stored in memory without irradiating it with light before reading the original. Then, the dark charge amount stored in memory is subtracted from the signal output obtained by reading the original, but since the temperature of the sensor and the surrounding area changes from the start to the end of reading the original, the correction is necessary. is not complete.
（発明が解決しようとする問題点）
この様に従来のリニアイメージセンサでは暗時電荷によ
るＳ／Ｎ比の低下、画像の劣化を十分に防止することが
困難である。(Problems to be Solved by the Invention) As described above, in the conventional linear image sensor, it is difficult to sufficiently prevent a decrease in the S/N ratio and image deterioration due to dark charges.
本発明は原稿読取り幅の長いインライン型のものであっ
ても良質な画像を得ることができるリニアイメージセン
サを提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a linear image sensor that can obtain high-quality images even if it is an inline type sensor with a long original reading width.
（問題点を解決するための手段）
本発明にかかるリニアイメージセンサによれば直線状に
配設された複数の感光画素からなる感光画素系列と、こ
の感光画素列に沿って平行に形成され、その少なくとも
一端部で屈曲形状をなす読出しレジスタと、読出しレジ
スタの屈曲部近傍に形成された黒基準画素部とを同一基
板上に形成している。(Means for Solving the Problems) According to the linear image sensor according to the present invention, a photosensitive pixel series consisting of a plurality of photosensitive pixels arranged linearly, and a photosensitive pixel series formed in parallel along this photosensitive pixel column, A readout register having a bent shape at at least one end thereof and a black reference pixel portion formed near the bent portion of the readout register are formed on the same substrate.
（作 用）
本発明において屈曲された読出しレジスタに近接して設
けられた黒信号画素から取出された暗時電荷はりニアイ
メージセンサチップと同じサイクルで読出される。した
がって温度条件等は感光画素と全く同じ条件にあるため
、暗時電荷の補正を正確かつ安定して行うことができる
。(Function) In the present invention, the dark charge taken out from the black signal pixel provided close to the bent readout register is read out in the same cycle as the near image sensor chip. Therefore, since the temperature conditions and the like are exactly the same as those of the photosensitive pixels, dark charge correction can be performed accurately and stably.
（実施例）
以下、図面を参照して本発明にかかるリニアイメージセ
ンサの一実施例を詳細に説明する。(Example) Hereinafter, an example of the linear image sensor according to the present invention will be described in detail with reference to the drawings.
同図によれば基板２０上に１チップ分の複数の感光画素
１１が直線状に配設されて感光画素列１２を形成してお
り、これに平行に読出しレジスタ１４が設けられている
。この読出しレジスタは従来のリニアイメージセンサと
異なってその端部で感光画素列から離れるようにほぼ直
角に屈曲されており、その屈曲部に近接して黒基準画素
１３が形成されている。読出しレジスタ１４の再先端部
には従来のリニアイメージセンサと同様に出力回路１５
が設けられている。黒基準画素１３は感光画素と同様の
形状および構造を有しているが、光を遮るための光遮蔽
膜、例えばアルミニウム膜、炭素系の黒色膜等をその表
面に何している。なお、感光画素、黒基準画素と読出し
レジスタとの間には通常のリニアイメージセンサと同様
にシフトゲート（図示せず）が形成されているのは言う
までもない。According to the figure, a plurality of photosensitive pixels 11 corresponding to one chip are linearly arranged on a substrate 20 to form a photosensitive pixel row 12, and a readout register 14 is provided in parallel to this. Unlike a conventional linear image sensor, this readout register is bent at an almost right angle away from the photosensitive pixel row at its end, and a black reference pixel 13 is formed near the bend. At the leading end of the readout register 14, an output circuit 15 is installed as in a conventional linear image sensor.
is provided. The black reference pixel 13 has the same shape and structure as the photosensitive pixel, but has a light shielding film for blocking light, such as an aluminum film, a carbon-based black film, etc. on its surface. It goes without saying that a shift gate (not shown) is formed between the photosensitive pixel, the black reference pixel, and the readout register, as in a normal linear image sensor.
この様な構成によれば出力回路から読出しレジスタに転
送された電荷を読出すと第２図に示すような出力電荷が
得られる。第２図において３０は黒基準画素の出力であ
り、２１〜２８は感光画素の出力を示している。これら
は同じサイクルで読出される。各感光画素の出力には黒
基準画素の出力と等しい暗時電荷（ハツチングで示す）
が重畳されているため、各感光画素出力から暗時電荷を
差引くようにすれば入射光の変化のみに対応する出力を
取出すことができる。With this configuration, when the charges transferred from the output circuit to the read register are read out, output charges as shown in FIG. 2 are obtained. In FIG. 2, 30 is the output of the black reference pixel, and 21 to 28 are the outputs of the photosensitive pixels. These are read in the same cycle. The output of each photosensitive pixel has a dark charge (indicated by hatching) equal to the output of the black reference pixel.
are superimposed, so by subtracting the dark charge from each photosensitive pixel output, it is possible to extract an output corresponding only to a change in incident light.
この様な構成のリニアイメージセンサを直線状に配設し
てインライン型リニアイメージセンサを形成した場合、
第４図と同様に隣接するりニアイメージセンサチップを
非常に近接させることができるため、従来と変らない連
続性を確保しつつ暗時電荷の補正が完全なリニアイメー
ジセンサを得ることができる。When linear image sensors with this configuration are arranged in a straight line to form an in-line linear image sensor,
As in FIG. 4, since adjacent linear image sensor chips can be placed very close to each other, it is possible to obtain a linear image sensor with perfect dark charge correction while ensuring the same continuity as in the past.
以上の実施例では読出しレジスタの一端部を屈曲させて
その屈曲部に近接させて黒基準画素を形成するようにし
ているが、暗時電荷の補正をより完全に行うために読出
しレジスタの両端部において黒基準画素を形成するよう
にしてもよい。また、各端部における屈曲形状は実施例
に示したほぼ直角の他どのようなものでもよく、要は黒
基準画素を確保できるスペースを生じ得るものであれば
よい。In the above embodiment, one end of the readout register is bent and the black reference pixel is formed close to the bent part, but in order to more completely correct the dark charge, both ends of the readout register are bent. A black reference pixel may be formed in the second step. Further, the bent shape at each end may be any shape other than the substantially right angle shown in the embodiment, as long as it can create a space that can secure the black reference pixel.
以上のように実施例に基づいて詳細に説明したように、
本発明によれば、感光画素列に平行に形成された読出し
レジスタの少なくとも一端部を屈曲させて黒基準画素を
形成するようにしているので暗時電荷の補正が完全にで
き、特に周囲温度の影響を減少させることができる。As explained in detail based on the examples above,
According to the present invention, since at least one end of the readout register formed parallel to the photosensitive pixel row is bent to form a black reference pixel, dark charge can be completely corrected, and especially when the ambient temperature impact can be reduced.
また、インライン型のリニアイメージセンサを形成した
場合には各リニアイメージセンサチップ間の暗時電荷の
ばらつきを吸収することができ、均一な特性のリニアイ
メージセンサを得ることができる。Further, when an in-line type linear image sensor is formed, it is possible to absorb variations in dark charge between each linear image sensor chip, and it is possible to obtain a linear image sensor with uniform characteristics.
第１図は本発明にかかるリニアイメージセンサの構成を
示す平面図、第２図はその出力信号の一例を示す波形図
、第３図は従来のリニアイメージセンサの構成を示す平
面図、第４図はインライン型リニアイメージセンサを説
明する平面図である。
１．１１・・・感光画素、２，１２・・・感光画素列、
３．１４・・・読出しレジスタ、４．１５・・・出力回
路、１０．２０・・・基板、１３・・・黒基準画素。FIG. 1 is a plan view showing the configuration of a linear image sensor according to the present invention, FIG. 2 is a waveform diagram showing an example of its output signal, FIG. 3 is a plan view showing the configuration of a conventional linear image sensor, and FIG. The figure is a plan view illustrating an in-line linear image sensor. 1.11...Photosensitive pixel, 2,12...Photosensitive pixel row,
3.14...Readout register, 4.15...Output circuit, 10.20...Substrate, 13...Black reference pixel.
Claims (1)
素列と、 この感光画素列に沿って平行に形成され、その少なくと
も一端部で屈曲形状をなす読出しレジスタと、 前記読出しレジスタの屈曲部近傍に形成された黒基準画
素部とを同一基板上に形成してなるリニアイメージセン
サ。 ２、屈曲部が感光画素列から離れるようにほぼ直角をな
すように形成されたことを特徴とする特許請求の範囲第
１項記載のリニアイメージセンサ。[Claims] 1. A photosensitive pixel row consisting of a plurality of photosensitive pixels arranged in a straight line, and a readout register formed parallel to the photosensitive pixel row and having a bent shape at at least one end thereof. , and a black reference pixel portion formed near the bent portion of the readout register are formed on the same substrate. 2. The linear image sensor according to claim 1, wherein the bent portion is formed at a substantially right angle away from the photosensitive pixel array.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61260401A JPS63114254A (en) | 1986-10-31 | 1986-10-31 | Linear image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61260401A JPS63114254A (en) | 1986-10-31 | 1986-10-31 | Linear image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63114254A true JPS63114254A (en) | 1988-05-19 |
Family
ID=17347397
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61260401A Pending JPS63114254A (en) | 1986-10-31 | 1986-10-31 | Linear image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63114254A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5159186A (en) * | 1990-10-05 | 1992-10-27 | Canon Kabushiki Kaisha | Photoconversion device with capacitive compensation in shielded dark current element |
| JPH05236197A (en) * | 1991-11-04 | 1993-09-10 | Xerox Corp | Sensor array |
-
1986
- 1986-10-31 JP JP61260401A patent/JPS63114254A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5159186A (en) * | 1990-10-05 | 1992-10-27 | Canon Kabushiki Kaisha | Photoconversion device with capacitive compensation in shielded dark current element |
| JPH05236197A (en) * | 1991-11-04 | 1993-09-10 | Xerox Corp | Sensor array |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6849323B2 (en) | Image reader and image forming device | |
| JPS63114254A (en) | Linear image sensor | |
| WO2008023806A1 (en) | Sensitivity correction method and imaging device | |
| JP3044779B2 (en) | Driving method of linear sensor | |
| JP3642666B2 (en) | Photometric system | |
| JPH0211193B2 (en) | ||
| JP2005192250A (en) | Solid-state image pickup device | |
| JPH04337967A (en) | Image reader | |
| JP2006344880A (en) | Imaging apparatus comprising microlens | |
| JP2004336201A (en) | Contact type image sensor and image reader using the same | |
| JPH02254854A (en) | In-line image sensor | |
| JP3090203B2 (en) | Infrared sensor | |
| JPH02244974A (en) | Image sensor | |
| JP2829007B2 (en) | Image sensor device | |
| JPH0127594B2 (en) | ||
| JPS594375A (en) | Solid-state image sensor | |
| JP3230874B2 (en) | Image reading device | |
| JP3296394B2 (en) | Charge transfer device | |
| JP3279094B2 (en) | Image sensor | |
| US20060285178A1 (en) | Stagger sensor and method for improving modulation transfer function | |
| KR0126393Y1 (en) | Image reading apparatus | |
| JP4370867B2 (en) | Solid-state imaging device | |
| JPS6231161A (en) | Solid-state image pickup device | |
| JP2657428B2 (en) | Image reading device | |
| JPS6146061A (en) | Solid-state image pickup device |