JPS63110025U - - Google Patents

Info

Publication number
JPS63110025U
JPS63110025U JP166587U JP166587U JPS63110025U JP S63110025 U JPS63110025 U JP S63110025U JP 166587 U JP166587 U JP 166587U JP 166587 U JP166587 U JP 166587U JP S63110025 U JPS63110025 U JP S63110025U
Authority
JP
Japan
Prior art keywords
substrate
heat sink
chamber
holder
cooling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP166587U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP166587U priority Critical patent/JPS63110025U/ja
Publication of JPS63110025U publication Critical patent/JPS63110025U/ja
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Cooling Or The Like Of Electrical Apparatus (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本考案に係る基板冷却装置の構成を説
明するチヤンハーの断面図、第２図は基板ホルダ
の変形例を説明するその断面図、第３図は基板ホ
ルダの他の変形例を説明するその断面図である。 １０……放熱板、２０……シヤフト、３０……
シリンダ、４０……チヤンバ、５０……ガラス基
板、６０……基板ホルダ。 FIG. 1 is a cross-sectional view of a channel holder explaining the structure of the substrate cooling device according to the present invention, FIG. 2 is a cross-sectional view of a modified example of the substrate holder, and FIG. 3 is a cross-sectional view of another modified example of the substrate holder. FIG. 10... Heat sink, 20... Shaft, 30...
Cylinder, 40...Chamber, 50...Glass substrate, 60...Substrate holder.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 予め加熱された基板を基板ホルダで支持し、こ
の基板を冷却用のチヤンバ内に挿入して冷却を行
う装置であつて、前記基板に直接的又は前記基板
ホルダを介して間接的に接触し、前記チヤンバの
壁面を介して前記基板の有する熱を放熱する放熱
板と、この放熱板を前記基板に対して接離移動さ
せる手段とを具備することを特徴とする基板冷却
装置。 A device that supports a preheated substrate with a substrate holder and cools the substrate by inserting the substrate into a cooling chamber, the device directly or indirectly contacting the substrate via the substrate holder, A substrate cooling device comprising: a heat sink that radiates heat from the substrate through a wall surface of the chamber; and means for moving the heat sink towards and away from the substrate.
JP166587U 1987-01-08 1987-01-08 Pending JPS63110025U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP166587U JPS63110025U (en) 1987-01-08 1987-01-08

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP166587U JPS63110025U (en) 1987-01-08 1987-01-08

Publications (1)

Publication Number Publication Date
JPS63110025U true JPS63110025U (en) 1988-07-15

Family

ID=30779789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP166587U Pending JPS63110025U (en) 1987-01-08 1987-01-08

Country Status (1)

Country Link
JP (1) JPS63110025U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2006095575A1 (en) * 2005-03-07 2008-08-14 シャープ株式会社 Plasma processing apparatus and semiconductor thin film manufacturing method using the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2006095575A1 (en) * 2005-03-07 2008-08-14 シャープ株式会社 Plasma processing apparatus and semiconductor thin film manufacturing method using the same

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