JPS63103073A - Aluminum vessel for evacuation - Google Patents
Aluminum vessel for evacuationInfo
- Publication number
- JPS63103073A JPS63103073A JP24649886A JP24649886A JPS63103073A JP S63103073 A JPS63103073 A JP S63103073A JP 24649886 A JP24649886 A JP 24649886A JP 24649886 A JP24649886 A JP 24649886A JP S63103073 A JPS63103073 A JP S63103073A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- vessel
- reactive substance
- titanium
- reactive substances
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052782 aluminium Inorganic materials 0.000 title claims description 34
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims description 34
- 239000000126 substance Substances 0.000 claims abstract description 17
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 15
- 239000010936 titanium Substances 0.000 claims description 15
- 229910052719 titanium Inorganic materials 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 7
- 238000007740 vapor deposition Methods 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 6
- 229910000838 Al alloy Inorganic materials 0.000 abstract description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 239000011247 coating layer Substances 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000007733 ion plating Methods 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概要〕
アルミニウムで形成した真空容器において、アルミニウ
ム表面をチタン被膜で覆うことによりアルミニウム表面
を反応性物質から保護する。DETAILED DESCRIPTION OF THE INVENTION [Summary] In a vacuum container made of aluminum, the aluminum surface is protected from reactive substances by covering the aluminum surface with a titanium film.
本発明は、たとえば分子線エピタキシー装置、プラズマ
ＣＶＤ装置などのような反応性物質が存在する真空環境
下でアルミニウムを真空容器として使用する際の、アル
ミニウム表面の保護技術に関する。The present invention relates to a technique for protecting an aluminum surface when aluminum is used as a vacuum container in a vacuum environment where reactive substances are present, such as in a molecular beam epitaxy device, a plasma CVD device, or the like.
尚、この明細書において、アルミニウムとはアルミニウ
ムおよびその合金を含むものとする。即ち、一般に市販
されているアルミニウム材には通常、銅、シリコン、マ
ンガン、マグネシウム、亜鉛、クロム、等が数％から１
０％位混入されているが本発明はそれらの金属を含むア
ルミニウムにも適用し得る。Note that in this specification, aluminum includes aluminum and its alloys. In other words, commercially available aluminum materials usually contain copper, silicon, manganese, magnesium, zinc, chromium, etc. from several percent to 1 percent.
Although about 0% of these metals are mixed, the present invention can also be applied to aluminum containing these metals.
アルミニウムはガス放出率がステンレス鋼に比べて一桁
以上低いという真空容器材料としてすぐれた特長を持っ
ているが、一方この材料は非常に活性な金属で、種々の
反応性物質と容易に反応してその表面が侵されるという
欠点を持つ。ことにＧａＡｓ系の分子線エピタキシーで
用いられるガリウムとは２７″Ｃという低温で共晶を作
り、その融は込みはアルミニウム材の深さ数ｍｍにまで
およぶことがある。このことからアルミニウム材は上記
の如きすぐれた特性を有するにも拘わらずそのままでは
化合物半導体の分子線エピタキシー装置等の反応性物質
処理用真空容器には用いることができなかった。Aluminum has an excellent feature as a material for vacuum containers in that its gas release rate is more than an order of magnitude lower than that of stainless steel, but on the other hand, this material is a very active metal and easily reacts with various reactive substances. The disadvantage is that the surface is attacked. In particular, gallium, which is used in GaAs-based molecular beam epitaxy, forms a eutectic at a low temperature of 27"C, and the melting can extend to a depth of several mm into the aluminum material. For this reason, the aluminum material Despite having the above-mentioned excellent properties, it could not be used as is in vacuum vessels for processing reactive substances such as molecular beam epitaxy equipment for compound semiconductors.
本発明が解決すべき課題はガス放出率が極めて低いとい
うアルミニウムの特性を活かすべくこれを反応性物質処
理用の真空容器に用いた場合に、アルミニウムがその反
応性物質と反応し易いという問題を如何にして克服する
かということにある。The problem to be solved by the present invention is that when aluminum is used in a vacuum container for processing reactive substances in order to take advantage of aluminum's characteristic of extremely low gas release rate, it solves the problem that aluminum easily reacts with the reactive substances. It's about how to overcome it.
即ち、発明の目的は反応性物質を取り扱う真空容器に適
したアルミニウムの表面保護手段を提供することにある
。That is, an object of the invention is to provide a means for protecting the surface of aluminum suitable for vacuum vessels handling reactive substances.
上記の目的を達成するために本発明によれば、アルミニ
ウムの表面を保護すべく、アルミニウム表面を金属チタ
ンの薄膜で覆うことを特徴とする。In order to achieve the above object, the present invention is characterized in that the aluminum surface is covered with a thin film of metallic titanium in order to protect the aluminum surface.
アルミニウム表面に施された金属チタン被膜が真空容器
内の反応性物質とアルミニウム表面との接触を妨げ反応
性物質がアルミニウム層に溶は込むのを防止する。The metallic titanium coating applied to the aluminum surface prevents the reactive substances in the vacuum container from coming into contact with the aluminum surface, thereby preventing the reactive substances from melting into the aluminum layer.
図面は本発明の一実施例を示すもので、分子線エピタキ
シー装置の真空容器１の一例を示す。容器の形状自体は
球形のものや円筒形のもの等もあり図示のものに何ら限
定されない。容器１はアルミニウム壁３により形成され
る。The drawing shows an embodiment of the present invention, and shows an example of a vacuum vessel 1 of a molecular beam epitaxy apparatus. The shape of the container itself may be spherical or cylindrical, and is not limited to what is shown in the figures. The container 1 is formed by an aluminum wall 3.
本発明によればアルミニウム壁の内周面は金属チタン薄
膜５が施される。According to the invention, a metallic titanium thin film 5 is applied to the inner peripheral surface of the aluminum wall.
アルミニウム表面を金属チタン薄膜で覆う具体的方法と
しては蒸着法、スパッタリング法、あるいはイオンブレ
ーティング法、等を用いることができる。このうち第一
の蒸着法では、通常の高真空装置に用いられるチタン・
サブリメーション・ポンプを用いることが可能である。As a specific method for covering the aluminum surface with a metallic titanium thin film, a vapor deposition method, a sputtering method, an ion blating method, or the like can be used. The first vapor deposition method uses titanium, which is used in ordinary high vacuum equipment.
It is possible to use a sublimation pump.
本発明の具体的実施例を以下に説明する。アルミニウム
合金ＪＩＳ規格Ａ３００３材にチタンを５０００Ａ蒸着
した試料と蒸着しない試料について、それぞれの上にガ
リウムを約２μｍ蒸着した後２００°Ｃ２４時間の熱処
理を行った。熱処理後、各々の試料表面をやわらかい紙
にて拭いたところ、チタン蒸着おこなった試料はガリウ
ムが完全に拭きとれて白色金属光沢が回復したのに対し
、チタン蒸着をおこなわない試料はガリウムが深くアル
ミニウム中に融は込んでおり、黒く鈍い表面のままであ
った。オージェ分光法の深さ方向分析によっても、チタ
ン蒸着を施した試料ではガリウム蒸着膜とアルミニウム
下地の間にチタン層が入りこんで両者の接触を妨げてい
るのに対し、チタン蒸着を施さなかった試料ではアルミ
ニウム下地にガリウムが深く融は込んでいることがわか
った。Specific embodiments of the present invention will be described below. For a sample in which titanium was deposited at 5000A on an aluminum alloy JIS standard A3003 material and a sample in which titanium was not deposited, about 2 μm of gallium was deposited on each, and then heat treatment was performed at 200° C. for 24 hours. After heat treatment, when the surface of each sample was wiped with soft paper, the gallium was completely wiped off in the sample with titanium vapor deposition and the white metallic luster was restored, whereas in the sample without titanium vapor deposition, the gallium was deep and reflected the aluminum. It had melted inside, leaving a black, dull surface. Depth analysis using Auger spectroscopy also revealed that in the sample with titanium vapor deposition, a titanium layer penetrates between the gallium vapor deposited film and the aluminum base, preventing contact between the two, whereas in the sample without titanium vapor deposition, It was found that gallium was deeply fused into the aluminum base.
以上の如く本発明によればアルミニウム表面が反応性物
質から遮断されるので反応性物質と反応することはなく
、反応性物質処理用の真空容器として有効なアルミニウ
ムを用いることができる。As described above, according to the present invention, the aluminum surface is shielded from reactive substances, so that it does not react with the reactive substances, and aluminum can be used effectively as a vacuum container for treating reactive substances.
図面はアルミニウム真空容器の一例を示す要部断面図。
１・・・容器、 ３・・・アルミニウム壁、５
・・・チタン薄膜。The drawing is a cross-sectional view of essential parts showing an example of an aluminum vacuum container. 1... Container, 3... Aluminum wall, 5
...Titanium thin film.
Claims (1)
する反応性物質を処理する真空用アルミニウム容器。An aluminum container for vacuum use for processing reactive substances, characterized in that the aluminum surface is coated with a titanium thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24649886A JPS63103073A (en) | 1986-10-18 | 1986-10-18 | Aluminum vessel for evacuation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24649886A JPS63103073A (en) | 1986-10-18 | 1986-10-18 | Aluminum vessel for evacuation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63103073A true JPS63103073A (en) | 1988-05-07 |
| JPH0313306B2 JPH0313306B2 (en) | 1991-02-22 |
Family
ID=17149289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24649886A Granted JPS63103073A (en) | 1986-10-18 | 1986-10-18 | Aluminum vessel for evacuation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63103073A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5478524A (en) * | 1992-08-24 | 1995-12-26 | Nissan Motor Co., Ltd. | Super high vacuum vessel |
-
1986
- 1986-10-18 JP JP24649886A patent/JPS63103073A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5478524A (en) * | 1992-08-24 | 1995-12-26 | Nissan Motor Co., Ltd. | Super high vacuum vessel |
| US5683523A (en) * | 1992-08-24 | 1997-11-04 | Nissan Motor Co., Ltd. | Titanium alloy for super high vacuum vessels |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0313306B2 (en) | 1991-02-22 |
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