JPS63101859U - - Google Patents
Info
- Publication number
- JPS63101859U JPS63101859U JP20337486U JP20337486U JPS63101859U JP S63101859 U JPS63101859 U JP S63101859U JP 20337486 U JP20337486 U JP 20337486U JP 20337486 U JP20337486 U JP 20337486U JP S63101859 U JPS63101859 U JP S63101859U
- Authority
- JP
- Japan
- Prior art keywords
- sensor body
- sensor
- gas
- heat
- metal oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229920003002 synthetic resin Polymers 0.000 claims description 3
- 239000000057 synthetic resin Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
Description
第１図は実施例のガスセンサの断面図、第２図
は実施例のガスセンサの―方向断面図である
。第３図は他の実施例の断面図である。第４図は
従来例のガスセンサの平面図である。
図において、２は合成樹脂カバー、４…ガス導
入孔、１８，５０…センサ本体、２２，５２…耐
熱絶縁基板、２４…金属酸化物半導体膜、２６…
ヒータ。
FIG. 1 is a sectional view of the gas sensor of the embodiment, and FIG. 2 is a sectional view of the gas sensor of the embodiment in the - direction. FIG. 3 is a sectional view of another embodiment. FIG. 4 is a plan view of a conventional gas sensor. In the figure, 2 is a synthetic resin cover, 4... gas introduction hole, 18, 50... sensor body, 22, 52... heat-resistant insulating substrate, 24... metal oxide semiconductor film, 26...
heater.
Claims (1)
金属酸化物半導体と、この金属酸化物半導体を加
熱するためのヒータとを設けたセンサ本体とし、
センサ本体を合成樹脂カバーに収容した、ガスセ
ンサにおいて、 センサ本体に対向した位置での、合成樹脂カバ
ーの内面と、センサ本体との間隔をｄ、 センサ本体から周囲への対流及び熱放射による
放熱量をＷとし、 ｄ／Ｗが４〜１２mm／Ｗとなるように、ｄを定
めたことを特徴とするガスセンサ。[Scope of Claim for Utility Model Registration] A sensor body comprising a heat-resistant insulating substrate, a metal oxide semiconductor whose resistance value changes depending on gas, and a heater for heating the metal oxide semiconductor,
In a gas sensor in which the sensor body is housed in a synthetic resin cover, the distance between the inner surface of the synthetic resin cover and the sensor body at a position facing the sensor body is d, and the amount of heat dissipated by convection and heat radiation from the sensor body to the surroundings. A gas sensor characterized in that d is determined such that d/W is 4 to 12 mm/W.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20337486U JPS63101859U (en) | 1986-12-23 | 1986-12-23 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20337486U JPS63101859U (en) | 1986-12-23 | 1986-12-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63101859U true JPS63101859U (en) | 1988-07-02 |
Family
ID=31168643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20337486U Pending JPS63101859U (en) | 1986-12-23 | 1986-12-23 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63101859U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07299876A (en) * | 1994-05-02 | 1995-11-14 | Takei Jushi Seisakusho:Kk | Sensor container and manufacture thereof |
-
1986
- 1986-12-23 JP JP20337486U patent/JPS63101859U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07299876A (en) * | 1994-05-02 | 1995-11-14 | Takei Jushi Seisakusho:Kk | Sensor container and manufacture thereof |