JPS6297247A - Ion beam scan controller - Google Patents

Abstract

PURPOSE:To set the scanning position accurately by splitting an ion beam by means of plural slits then measuring and comparing the quantities of respective beams and knowing the central position of beam from the distribution of beam density. CONSTITUTION:An ion implanting apparatus is formed in such a manner that the ions are moved at the scanning section within a range larger than the size of an object to be treated, thus implanting the ions uniformly into the surface of said object. Here, the ion beam scanning control section is formed with plural slits 2a for passing an ion beam 1a while splitting, detecting sections 3a for receiving respective beams and measuring sections 4a for counting and displaying the quantity of beam. Then the ion beam 1a is moved to the end section of the scanning width, thus beam density distributions corresponding to respective slit positions are obtained. Consequently, the uniformity of implantation can be improved by matching the central position of beam with the original point of scanning.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an ion implantation device used in one process of manufacturing semiconductor integrated circuits, etc., and in particular to a scanning device for determining the scan position and width of an ion beam. Regarding the control device [Prior art] As shown in Figure 3, in conventional ion implantation equipment, target ions are moved in a scanning section over a range larger than the size of the object to be processed, and uniformly spread over the surface of the object to be processed. Measures are taken to ensure that ions are implanted in the area, and the end 6 of the scan width, which serves as the scan origin, and the scan width 5 are set to ensure uniform implantation. The scanning position of this type of ion beam 1b is set by a slit plate 2 provided at the scanning end.
By finding the maximum value of the amount of beam that has passed through one slit 2b using the detection unit 3b and measurement unit 4b, the scan end is determined and set as the scan origin 6, and the scan width 5 is scanned using the unique value built into the device. The location had been determined.

[Problem that the invention seeks to solve]

The conventional ion beam scan control device described above has one slit as shown in Figure 2, so when finding the maximum value of beams whose sizes are much different than the size of the slit, it is necessary to Since the beam is moved back and forth several times and the position where the beam amount is maximum is set as the scanning origin, it is not possible to know what the beam density distribution is with the slit, and the position of the beam center can be accurately grasped. It is difficult to set the scan origin, and the accuracy is insufficient to set the scan origin.

In a device that scans a semiconductor wafer at a constant speed, the scan origin is not important, but in a device that scans while changing speed based on a certain calculation formula, it is difficult to match the origin in the calculation formula with the actual scan origin. This error is a major factor in impairing the uniformity of ion implantation.

The present invention provides a device that solves the above problems.

[Means for solving problems]

The ion beam scan control device of the present invention includes a plurality of slits through which the ion beam is divided and passed through, a detection section that receives the ion beam that has passed through each slit, and a beam measurement section that counts and displays the amount of the received beam. It is characterized by having the following.

〔Example〕

Next, an embodiment of the present invention will be described with reference to the drawings.

FIG. 1 is a top view of one embodiment of the present invention. In FIG. 1, an ion beam 1 (Z is a plurality of slits of a slit plate 2, which is moved to the end of the scan width by a scan magnet and is provided at the end of the scan width) passes through the ion beam 2a. divided into. Furthermore, slit 2
The ion beam 1α divided by α enters the ion beam detection unit corresponding to the slit 2cL through which it has passed, and the ion beam amount of each portion is displayed as a current by the measurement unit 4α. Therefore, the beam density distribution corresponding to each slit position can be known at a glance, and the accurate beam center position can be easily matched with the scan origin.

〔Effect of the invention〕

As explained above, the present invention divides the ion beam using a plurality of slits, receives the beams that have passed through each slit, determines the mass production distribution of each beam, and determines the scan origin by knowing the center position of the beam. can be performed accurately, and the scanning position can be set accurately, which has the great effect of improving implantation uniformity.

Furthermore, by providing the detection portions at both ends of the scan width, the scan width can be determined accurately, and the above-mentioned effects can be further increased.

[Brief explanation of drawings]

FIG. 1 is a top view showing an embodiment of the present invention, FIG. 2 is a top view showing a conventional device, and FIG. 3 is a schematic diagram showing a conventional device. 1α...Ion beam, 2...Slit plate, group...
・Slit, theory...detection section, 4α...measurement section, 5.
...Scan width, 6...Scan end

Claims (1)

[Claims] (1) It is characterized by having a plurality of slits through which the ion beam is divided and passed through, a detection section that receives the ion beam that has passed through each slit, and a beam measurement section that counts and displays the amount of the received beam. Ion beam scanning control device.