JPS6285254A - Photomask - Google Patents
PhotomaskInfo
- Publication number
- JPS6285254A JPS6285254A JP60225748A JP22574885A JPS6285254A JP S6285254 A JPS6285254 A JP S6285254A JP 60225748 A JP60225748 A JP 60225748A JP 22574885 A JP22574885 A JP 22574885A JP S6285254 A JPS6285254 A JP S6285254A
- Authority
- JP
- Japan
- Prior art keywords
- film
- photomask
- silver salt
- chloride emulsion
- salt emulsion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、紫外線遮断を目的とするフォトマスクの紫
外線遮断膜の、ｉｌｌ遺に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an ultraviolet blocking film for a photomask for the purpose of blocking ultraviolet rays.
従来、フォトレジストを加工する為に用いるフォトマス
クの紫外線遮断膜にはクロム、ニッケル。Conventionally, chromium and nickel are used in the ultraviolet blocking film of photomasks used to process photoresists.
酸化鉄等が用いられている。これらの薄膜はあらかじめ
ガラス上全面へ均一に膜付けしたのち、フォトレジスト
を用いて加工していたが、全面膜付は時に発生するピン
ホール欠陥とフォトレジスト塗布時に発生するピンホー
ル欠陥が存在し、フォトマスク！１造の歩留りを悪くし
ていた。また、前？
配索外線遮断Ｐａは全て真空装者等による膜付は工程と
フォトエツチング工程が必要であシ、フォトマスク製造
工程が繁雑になっている。Iron oxide etc. are used. These thin films were applied uniformly over the entire surface of the glass in advance and then processed using photoresist.However, when applying a film over the entire surface, there are pinhole defects that sometimes occur and pinhole defects that occur when applying the photoresist. , Photomask! This was causing a decline in the yield of 1-bu. Also, before? All of the wiring external wire cutoffs Pa require a process for attaching a film by a vacuum installer or the like and a photoetching process, making the photomask manufacturing process complicated.
そこで本発明は、これら製造上の欠陥の低減と薄膜加工
工程の省略によるフォトマスクｍ’ａｏｍ略化を目的と
している。Therefore, the present invention aims at reducing these manufacturing defects and simplifying the photomask m'aom by omitting the thin film processing step.
本発明のフォトマスクは゛、紫外線遮断膜部分に銀塩乳
剤膜を設けた透明基板面に、前記銀塩乳剤膜よりも硬い
透明な膜をコーティングしたことを特徴としている。The photomask of the present invention is characterized in that the surface of a transparent substrate provided with a silver salt emulsion film in the ultraviolet blocking film portion is coated with a transparent film that is harder than the silver salt emulsion film.
本発明を図面にもとづいて説明する。−第５図は本発明
にもとづき行なった具体的なフォトマスク形成剤である
。第１図のガラス基板上の銀塩乳剤をフォトプロッター
で４光後、現（象を行なうと、銀塩乳剤がバターングさ
れて１２図となる。次に第５図に示すように保護膜であ
る酸化ケイ素を２０００（Ｘ）スパッタリングにより形
成する。表１に示すように、フォトマスク紫外線遮断膜
面の洗浄用として常時使用されているアセトンふきに対
する強度においても、全く溶解せず十分な耐久性がある
。The present invention will be explained based on the drawings. - FIG. 5 shows a specific photomask forming agent made according to the present invention. When the silver salt emulsion on the glass substrate shown in Figure 1 is exposed four times using a photoplotter, the silver salt emulsion is patterned as shown in Figure 12.Next, as shown in Figure 5, a protective film is applied. A certain silicon oxide is formed by 2000(X) sputtering.As shown in Table 1, it does not dissolve at all and has sufficient durability even with acetone wipes, which are regularly used for cleaning the surface of the photomask ultraviolet blocking film. There is.
表 １
本発明にもとづいて作成された他の実施例として、銀塩
乳剤膜の保護膜に丁クリル系紫外線硬化樹脂を使用する
。バターニングされた銀塩乳剤膜上にアクリル系紫外線
硬化樹脂をｚｏｏｏＸスピンコードした後、紫外線を照
射させアクリル系樹脂の保護膜の強度を十分とした例で
ある。Table 1 As another example prepared based on the present invention, a chlorine-acrylic ultraviolet curing resin is used as a protective film for a silver salt emulsion film. This is an example in which an acrylic ultraviolet curing resin was subjected to zoooX spin coding on a patterned silver salt emulsion film, and then ultraviolet rays were irradiated to increase the strength of the acrylic resin protective film.
以上説明した本発明による効果は、銀塩乳剤膜上に酸化
ケイ素全コーティングしてフォトマスクとすることＫよ
り
（１）紫外光速Ｆｆｒ膜付は前のガラス基板焼津工程、
遮光膜付は工程、遮光幅エッチング工程の省略が可能と
なる。The effects of the present invention explained above are as follows: (1) The ultraviolet light speed Ffr film is attached to the glass substrate in the previous Yaizu process,
The process of adding a light shielding film and the process of etching the light shielding width can be omitted.
１２１クロム。ニッケル等で発生していた紫外線遮光Ｉ
戻のピンホールがフォトマスクの不良項目から除かれる
為、遮光パターン部分の不良が低減される。121 chrome. Ultraviolet ray blocking I caused by nickel etc.
Since the return pinhole is excluded from the defects of the photomask, defects in the light-shielding pattern portion are reduced.
以上により、簡易な半導体および大型液晶表示％＋を用
のｔｃ用フォトマスクとして有効であるのみならず、同
州のプロセスを必要とする他の装（虚におけるフォトマ
スクとしても有用である。As described above, it is not only effective as a TC photomask for simple semiconductors and large liquid crystal displays, but also useful as a photomask for other devices that require the same process.
第１図〜第５図は本発明の詳細な説明図。 １・・・銀塩乳剤 ２・・・ガラス ）・・・保護膜 以 上 出８人 エプソン株式会社 1 to 5 are detailed explanatory diagrams of the present invention. 1...Silver salt emulsion 2...Glass )···Protective film that's all 8 people from Epson Corporation
Claims (1)
遮断をパターン状に行なうフォトマスクにおいて、前記
銀塩乳剤膜を設けた前記透明基板面に前記銀塩乳剤膜よ
りも硬い透明な膜をコーティングしたことを特徴とする
フォトマスク。In a photomask in which a silver salt emulsion film is provided on a transparent substrate, and the silver salt emulsion film blocks ultraviolet rays in a pattern, the surface of the transparent substrate on which the silver salt emulsion film is provided has a transparent material harder than the silver salt emulsion film. A photomask characterized by being coated with a film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60225748A JPS6285254A (en) | 1985-10-09 | 1985-10-09 | Photomask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60225748A JPS6285254A (en) | 1985-10-09 | 1985-10-09 | Photomask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6285254A true JPS6285254A (en) | 1987-04-18 |
Family
ID=16834212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60225748A Pending JPS6285254A (en) | 1985-10-09 | 1985-10-09 | Photomask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6285254A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001002908A1 (en) * | 1999-06-30 | 2001-01-11 | Hitachi, Ltd. | Method for manufacturing semiconductor integrated circuit device, optical mask used therefor, method for manufacturing the same, and mask blanks used therefor |
| US6303262B1 (en) | 1998-06-18 | 2001-10-16 | Mitsubishi Paper Mills Ltd. | Photomask material, photomask and methods for the production thereof |
| WO2001092957A1 (en) * | 2000-06-01 | 2001-12-06 | Nippon Paper Industries Co., Ltd. | Transfer sheet for transferring protective layer for photographic emulsion face and photomask with protective layer |
-
1985
- 1985-10-09 JP JP60225748A patent/JPS6285254A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6303262B1 (en) | 1998-06-18 | 2001-10-16 | Mitsubishi Paper Mills Ltd. | Photomask material, photomask and methods for the production thereof |
| WO2001002908A1 (en) * | 1999-06-30 | 2001-01-11 | Hitachi, Ltd. | Method for manufacturing semiconductor integrated circuit device, optical mask used therefor, method for manufacturing the same, and mask blanks used therefor |
| US6677107B1 (en) | 1999-06-30 | 2004-01-13 | Hitacji, Ltd. | Method for manufacturing semiconductor integrated circuit device, optical mask used therefor, method for manufacturing the same, and mask blanks used therefor |
| US7125651B2 (en) | 1999-06-30 | 2006-10-24 | Renesas Technology Corp. | Method of manufacturing semiconductor integrated circuit device optical mask therefor, its manufacturing method, and mask blanks |
| WO2001092957A1 (en) * | 2000-06-01 | 2001-12-06 | Nippon Paper Industries Co., Ltd. | Transfer sheet for transferring protective layer for photographic emulsion face and photomask with protective layer |
| US6844116B2 (en) | 2000-06-01 | 2005-01-18 | Nippon Paper Industries Co., Ltd | Transfer sheet for transferring protective layer for photographic emulsion face and photomask with protective layer |
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