JPS628157B2 - - Google Patents

Info

Publication number
JPS628157B2
JPS628157B2 JP56039943A JP3994381A JPS628157B2 JP S628157 B2 JPS628157 B2 JP S628157B2 JP 56039943 A JP56039943 A JP 56039943A JP 3994381 A JP3994381 A JP 3994381A JP S628157 B2 JPS628157 B2 JP S628157B2
Authority
JP
Japan
Prior art keywords
radiation
electrode
barrier junction
radiation source
schottky barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56039943A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57154083A (en
Inventor
Haruo Hosomatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
YOKOKAWA DENKI KK
Original Assignee
YOKOKAWA DENKI KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by YOKOKAWA DENKI KK filed Critical YOKOKAWA DENKI KK
Priority to JP56039943A priority Critical patent/JPS57154083A/ja
Publication of JPS57154083A publication Critical patent/JPS57154083A/ja
Publication of JPS628157B2 publication Critical patent/JPS628157B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/24Measuring radiation intensity with semiconductor detectors

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
JP56039943A 1981-03-19 1981-03-19 Ct scanner Granted JPS57154083A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56039943A JPS57154083A (en) 1981-03-19 1981-03-19 Ct scanner

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56039943A JPS57154083A (en) 1981-03-19 1981-03-19 Ct scanner

Publications (2)

Publication Number Publication Date
JPS57154083A JPS57154083A (en) 1982-09-22
JPS628157B2 true JPS628157B2 (enrdf_load_stackoverflow) 1987-02-20

Family

ID=12567031

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56039943A Granted JPS57154083A (en) 1981-03-19 1981-03-19 Ct scanner

Country Status (1)

Country Link
JP (1) JPS57154083A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59109981U (ja) * 1983-01-17 1984-07-24 横河電機株式会社 多チヤンネル形放射線検出器
DE3768112D1 (de) * 1986-03-03 1991-04-04 Toshiba Kawasaki Kk Strahlungsdetektor.
JPH0734480B2 (ja) * 1986-07-07 1995-04-12 株式会社ジャパンエナジー CdTe放射線検出素子
DE10217426B4 (de) * 2002-04-18 2006-09-14 Forschungszentrum Jülich GmbH Ortsauflösender Detektor für die Messung elektrisch geladener Teilchen und Verwendung des Detektors

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1551253A (en) * 1975-07-10 1979-08-30 Emi Ltd Detection of radiation
JPS603792B2 (ja) * 1977-02-04 1985-01-30 株式会社東芝 マルチチヤネル型半導体放射線検出器
JPS53105182A (en) * 1977-02-24 1978-09-13 Toshiba Corp Semiconductor radiant-ray detector

Also Published As

Publication number Publication date
JPS57154083A (en) 1982-09-22

Similar Documents

Publication Publication Date Title
US4064521A (en) Semiconductor device having a body of amorphous silicon
US4317844A (en) Semiconductor device having a body of amorphous silicon and method of making the same
JP4416318B2 (ja) 平面ビームラジオグラフィーで画像を得る方法とその装置、及び放射線検出器
JP4278515B2 (ja) ソーラセル及びソーラセルの製造法
US5164809A (en) Amorphous silicon radiation detectors
US6069360A (en) Method and apparatus for electron-only radiation detectors from semiconductor materials
Hitomi et al. Polarization phenomena in TlBr detectors
US9318627B2 (en) Semiconductor radiation detector
EP0293094B1 (en) Radiation detector
WO2001050155A1 (en) A method and an apparatus for radiography and a radiation detector
JPS628157B2 (enrdf_load_stackoverflow)
US3939555A (en) Strip type radiation detector and method of making same
CN100501446C (zh) 基于气体的电离辐射探测器及其制造方法
US4571494A (en) Multi-channel radiation detector array
US4689649A (en) Semiconductor radiation detector
JPH0554078B2 (enrdf_load_stackoverflow)
US4418452A (en) X-Ray detector
US3925669A (en) Stripline radiation detection apparatus
US4060822A (en) Strip type radiation detector and method of making same
JPH0690291B2 (ja) 放射線検出器
CA1052013A (fr) Detecteur nucleaire comprenant un cristal de tellurure de cadmium
US6821714B1 (en) Lithography process for patterning HgI2 photonic devices
Sellin et al. Spectroscopic response of coplanar diamond alpha particle detectors
Auricchio et al. Spectroscopic response versus interelectrodic charge formation position in CdTe detectors
JPS6328076A (ja) 半導体放射線検出器