JPS6271827A - Temperature detection circuit - Google Patents

Abstract

PURPOSE:To detect simply temperature with a small-scale circuit by constituting a temperature detection part of a reverse bias state of a P-N junction diode and a high resistance part and using a MOS logic circuit for a decision circuit. CONSTITUTION:As to a reverse bias electrical current of the P-N junction diode 1, since a diffusion current component is dominant in a state over about 1V in the reverse direction in case of silicon, the electric current in the ordinary direction is increased exponentially as the temperature rises. When the high resistance part 2 connected in series with the diode 1 is changed only about several % with respect to the ultrahigh temperature, even if a constant is set so that the diode electric current is made <<the high resistance part electric current in a normal temperature area, the large and small relation is throughly reversed in a high-temperature area. Accordingly, when a temperature sensing resistance part 1 is connected with the high electric potential side like (a) in diagram, an output terminal 3 inclines to the high electric potential side in the temperature area to make the diode electric current > the high resistance part electric current and when the temperature sensing resistance part 1 is connected with the low electric potential side like (b) in diagram, an output signal inclined to the low electric potential side is obtained on the contrary. The output signal obtained there can be decided using a logic circuit.

Description

[Detailed Description of the Invention] [Ginan Bunshu] The present invention is in the field of integrated circuits! IJ [belongs to detection technology.

〔,overview〕

This invention utilizes the property that the pavement characteristics of a PN junction diode reverse leakage current changes exponentially in a MOS or bipolar integrated circuit, and when connected in series with a high resistance means of a pond, a high Utilizing the fact that the element innovation dance with the resistance means is extremely τ-balanced, and in combination with the characteristics of the high-resistance means, it is possible to easily and irregularly detect the deviation in 4 times. be.

[Conventional technology]

There has been a conventional method for detecting polarity using the unilateral characteristic of a PN junction. However, there are many technologies for applications such as measuring the WK value itself, such as the temperature coefficient of the pace emitter of a bipolar transistor +&f3'=t pressure,
PN junction diode forward same drop 1 pressure wetting coefficient, MOS
The FET gate threshold has a pressure temperature coefficient of approximately -2 to
Most of them took advantage of the fact that it changes at 5 mV/°C.

The above-mentioned construction method, which has been conventionally used, is certainly the best technology for temperature measurement. 9.

However, when considering applications other than treetop Wl measurement, (1) Since one indexing element is used at the rear end, @A
The motion becomes larger.

(2) The bias circuit must be devised (it cannot be used effectively as a signal.

(J) The obtained 6 detection part processing system is high 11II
Become i.

f4+ Related to (3) above, the circuit scale increases.

i51 Because it is necessary to consider the generality of the system configuration circuit, it is not suitable for simple L6 use.

Only the equiβ truncations are noticeable, and it can be seen that the flexibility is quite low.

[Problems and objectives to be addressed by the invention] The present invention aims to solve the above-mentioned drawbacks, particularly in terms of circuit scale, hidden flow, and S usability, from the viewpoint of scalability. As・ρru.

[Means for resolving the gap]

In the present invention, the hot water temperature detection section ll+ is formed in a PNN junction diode -)', 7) in a reverse bias state and a high resistance section,
The undercurrent of the detection part is a m11, and the judgment circuit is CM
O.S.

It is used in the VOS logic circuit IM' of NMo53.

[Effect]

First, we will explain the operation of the spirituality simulating circuit of the present invention, focusing on the detection section.

Figure (b) is a basic diagram of the temperature detection section according to the present invention. In the figure, 1 is a sensitive resistance section, 2 is a high resistance section, and 5 is one output child.

The reverse bias 11m of the PN junction diode is in the reverse direction in the case of silicon, and in a state of IV or higher, the diffusion current component becomes dominantv);
It can be expressed as p [Kg/FIT]・it+. Here, 01: Intrinsic carrier IIk degree Aj: Joint area g: Si forbidden width R: Bolsomann constant Therefore, as the 1-product area increases, the parallel direction 7-area flow increases like an index function.

On the other hand, if the resistance part connected in series with the PN junction diode changes only by a few inches with respect to temperature, the diode current (high resistance part current) at room temperature will change Even so, it can be seen that the magnitude relationship is sufficiently reversed in the high temperature range.

Therefore, iC9-1tv (If you connect the diode eddy-sensing resistance part to the high potential side as in A3, the output terminal 5 will be biased towards the high potential side in the irradiance region where the diode current > high resistance part!, as shown in Fig. 1). If the connection is made as shown in (b), on the other hand, an output of 1g, which is shifted to the low potential side, can be obtained.

To judge the Deba signal obtained there, the most li! l
A simple method is to use a logic circuit.

〔Example〕

FIG. 2 is a specific implementation sequence of the present invention.

In the figure, the sensing resistance section is made of an IUPN junction diode, and 2 is a P channel depletion-7 contact type MC8FKT that becomes a high resistance section.
4 is a software inverter for detection and judgment, 5 is a pull-down resistor, 6 is a foot output record 1 output R-8 launch, 7 is an output terminal, 8 is a latch equivalent clear terminal of 6, 9
? In this example, which is the crossover signal terminal of TA, an MO8 constant current source is used in the high resistance part. Therefore, if the constant current value is 1°, the humidity characteristic of the resistance part is 1° Me βP (VT?)1...
(2) Here βP: P channel Mo5FP! Tt current coefficient VTP: Since it can be expressed as p channel gate value voltage, gate threshold + i! '! Since the temperature characteristic of pressure has a first-order altitude characteristic, 1° exhibits a second-order characteristic with respect to altitude.

On the other hand, since the diode characteristics show an exponential change with respect to 1 degree as in the above flJ equation, the diode characteristics exhibit an exponential change with respect to 1 degree (
(absolute degree) TI is the altitude that satisfies.

Here, V? P': Foot [Flow M OS F K T (7
) fg 4 VTH.

To: Absolute chamber width 1m, 1f, α: Gate value voltage tolerance coefficient.

In the formula, the m2 term is the diode material, MO8FI! jT constant,
It is uniquely determined by the diode contact area.

- Mari 1 term is determined by the gate threshold pressure of MC'5FKT.

Next, considering the logic U path determination system, when the clocked gate 4 is activated by the signal terminal 9, it operates as a normal inverter, so the logic bA value voltage: V
D1m is given in the case of CMo5.

Here, βI bow βP is 8MO8゜P that constitutes the inverter.
lillO8FKT's tIla ff l V'rP
I V'rl+ is each gate threshold voltage of the MOSFET.

Therefore, if the current coefficients of the elements are chosen equally, vnct-(VDD-VT P+VT 11 )/2
-・-f51, gate w4+IiI
! The pressure deviation characteristics are so bad that VDIT itself is almost impossible! It can be considered that it does not depend on [.

Above 7) If the element constant is set as x, the gate threshold will be 1? i
When seismic pressure VT-@VTI'iE is equal, logical ti+Lu
ijVnmT is the midpoint of the t source voltage.

Therefore, if the temperature is lower than the balance mWTx shown in equation (3), the input is determined to be "H", and conversely, if the temperature is high, the input is determined to be "L".

Now, when the temperature gradually rises from 4 and exceeds 1f of the Y island TI, the inverter output of 4 becomes "H" and the R-
8 latch input is triggered, and H'' is output to output terminal 7.

Conversely, when Tx is lower than Tx, ")1" does not enter the input of R-8 launch 6, and the output terminal of R-8 maintains -L.

When the warm Tx continues for a certain period of time, the inverter 4 outputs the full output at the intermediate level (not high or low), so the 4th threshold of the Fl-8 latch circuit 6 is the same as the inverter 4 It is necessary to take care not to live with

The pull-down resistor 5 is to prevent the latch input 6 from malfunctioning due to high innovation when the gross inverter 4 is not active.

〔Effect of the invention〕

Thanks to the present invention, (the operating current in the 11th room is extremely small at the time of high voltage, and there is no disadvantage at all even if it coexists with a 4-wire circuit).

, 2+ It is possible to incorporate it onto a chip in the currently used .7 recon channel circuit process.

(3) Therefore, it is suitable for bankruptcy.

(4) The circuit scale is small and is advantageous in terms of cost.

(5) Once the constant is set, especially +4 integer is necessary 1/).

(6) The expansion of logic elements can be extended to all ICs that absorb digital signals 'fe'.

(7) Since the temperature setting depends on the area of the diode junction and the resistance of the resistor, no multiple adjustments are required.

Benefits such as:

〔application〕

The scope of application of the present invention is wide. Among them, an application method that is believed to be effective in the future is IC chip @ temperature detection.

: As the degree of integration increases in a 14-term circuit, the operating efficiency of the chip inevitably increases and the polarity conditions worsen. high speed,! JJ:
When the IC manufactured by J becomes high-quality, its characteristics deteriorate and normal operation becomes difficult.

For example, if the present invention is incorporated into an IC, it will be possible to detect malfunctions of the IC due to temperature rise, such as protruding V tongue or large I.
Application as a self-protect circuit that detects abnormal heat generation in a driver stage where I current always flows and cuts the current in advance is a failure.

[Brief explanation of drawings]

Figures 1'(a) and 1(b) are configuration diagrams of the production section of the present invention. FIG. 2 is a circuit diagram of the implementation. 1... Temperature sensitive resistance section FN junction diode 2... Resistance control section 5... Detection section output terminals 4 to 6... Logical judgment section 7... Detection output terminal

Claims (1)

[Claims] It has a detection section formed by connecting a temperature-sensitive resistance section and a high-resistance section in series, and a logical determination means, and the detection section sets the temperature-sensing resistance section to a high potential side and the high-resistance section to a low potential side or the above. The connection point between the temperature-sensitive resistance section and the high-resistance section is connected to the logical judgment means input terminal as an output signal, while a PN junction is connected to the temperature-sensitive resistance section. A temperature detection circuit characterized by utilizing diode reverse leakage characteristics.