JPS6268259U - - Google Patents
Info
- Publication number
- JPS6268259U JPS6268259U JP1985160373U JP16037385U JPS6268259U JP S6268259 U JPS6268259 U JP S6268259U JP 1985160373 U JP1985160373 U JP 1985160373U JP 16037385 U JP16037385 U JP 16037385U JP S6268259 U JPS6268259 U JP S6268259U
- Authority
- JP
- Japan
- Prior art keywords
- heat shield
- cryostat
- refrigerator
- outer case
- cooling stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Devices That Are Associated With Refrigeration Equipment (AREA)
- Containers, Films, And Cooling For Superconductive Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985160373U JPS6268259U (cg-RX-API-DMAC7.html) | 1985-10-17 | 1985-10-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985160373U JPS6268259U (cg-RX-API-DMAC7.html) | 1985-10-17 | 1985-10-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6268259U true JPS6268259U (cg-RX-API-DMAC7.html) | 1987-04-28 |
Family
ID=31085694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1985160373U Pending JPS6268259U (cg-RX-API-DMAC7.html) | 1985-10-17 | 1985-10-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6268259U (cg-RX-API-DMAC7.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7001790B2 (en) | 1994-03-22 | 2006-02-21 | Toyoda Gosei Co., Ltd. | Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity |
-
1985
- 1985-10-17 JP JP1985160373U patent/JPS6268259U/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7001790B2 (en) | 1994-03-22 | 2006-02-21 | Toyoda Gosei Co., Ltd. | Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity |
| US7138286B2 (en) | 1994-03-22 | 2006-11-21 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using group III nitrogen compound |
| US7332366B2 (en) | 1994-03-22 | 2008-02-19 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using group III nitrogen compound |