JPS6266442A - Photomask for optical memory element - Google Patents

Photomask for optical memory element

Info

Publication number
JPS6266442A
JPS6266442A JP20786485A JP20786485A JPS6266442A JP S6266442 A JPS6266442 A JP S6266442A JP 20786485 A JP20786485 A JP 20786485A JP 20786485 A JP20786485 A JP 20786485A JP S6266442 A JPS6266442 A JP S6266442A
Authority
JP
Japan
Prior art keywords
photomask
resist
optical memory
memory element
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20786485A
Other languages
Japanese (ja)
Other versions
JP2534226B2 (en
Inventor
Kenji Oota
賢司 太田
Junji Hirokane
順司 広兼
Akira Takahashi
明 高橋
Tetsuya Inui
哲也 乾
Toshihisa Deguchi
出口 敏久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP60207864A priority Critical patent/JP2534226B2/en
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to EP90203177A priority patent/EP0434114B1/en
Priority to DE8686306711T priority patent/DE3682985D1/en
Priority to DE3689593T priority patent/DE3689593T2/en
Priority to EP19860306711 priority patent/EP0214824B1/en
Publication of JPS6266442A publication Critical patent/JPS6266442A/en
Priority to US07/229,753 priority patent/US4925776A/en
Priority to US08/074,272 priority patent/US5470694A/en
Application granted granted Critical
Publication of JP2534226B2 publication Critical patent/JP2534226B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PURPOSE:To prevent the defective adhesion between a resist and photomask by preliminarily forming a notch to the position of the photomask where said mask faces the projecting part of the resist. CONSTITUTION:A groove 8 for absorbing the build-up part of the resist 6 is formed to the place of the photomask 7 where the mask faces the end part of a glass disk 1 to eliminate the defective adhesion. The groove 8 has 4mm width from 127mm diameter if the disk 1 is 130mm+ or -0.1mm and the depth thereof is preferably about 0.2-0.5mm. In short, such groove can be formed simply by providing the part to absorb the build-up part of the resist 6 at the end of the disk 1 to the photomask. The pattern for the guide tracks and track addresses of an optical memory element is thereby satisfactorily transferred to the resist film coated on a substrate for the optical memory element by using the photomask.

Description

【発明の詳細な説明】 く技術分野〉 本発明は光により情報の記録、再生、消去の少くとも1
つの動作を行なう光メモリ素子に関するものであり、更
に詳細には光メモリ素子の基板にガイドトラック或いは
トラック番地等のパターンを転写する際に使用するフォ
トマスクに関するものである。
[Detailed Description of the Invention] Technical Field> The present invention provides at least one method for recording, reproducing, and erasing information using light.
The present invention relates to an optical memory element that performs two operations, and more particularly relates to a photomask used when transferring patterns such as guide tracks or track addresses onto a substrate of an optical memory element.

〈発明の技術的背景とその問題点〉 近年、光メモリ素子は高密度・大容量のメモリ素子とし
て年々その必要性が高まっている。この光メモリ素子は
その使用形態により、再生専用メモリ、追加記録可能メ
モリ及び書き換え可能メモリの3種に分けることができ
る。
<Technical background of the invention and its problems> In recent years, the need for optical memory devices as high-density, large-capacity memory devices has been increasing year by year. This optical memory device can be divided into three types depending on its usage: read-only memory, additionally recordable memory, and rewritable memory.

このうち、追加記録可能メモリ及び書き換え可能メモリ
として使用する光メモリ素子は、情報の記録、再生を行
う光ビームを光メモリ素子の所定の位置に案内するため
に、通常光メモリ素子の基板にガイドトラックをそなえ
ている。またこのガイドトラックが何番目のトラックか
を識別するために、ガイドトラックの一部にトラック番
地を示す情報が書き込まれていることが多い。
Among these, optical memory elements used as additional recordable memory and rewritable memory usually have a guide track on the substrate of the optical memory element in order to guide a light beam for recording and reproducing information to a predetermined position of the optical memory element. ing. Further, in order to identify the track number of this guide track, information indicating the track address is often written in a part of the guide track.

このガイドトラックを光メモリ素子の基板に形成するた
めの製法の1つに特開昭59−210547に示す方法
がある。これを第5図を用いて略説する。まず第5図(
a)に示すようにガラスディスク1にスピンナー等で塗
布したレジスト膜2を形成し、次に同図(b)のごとく
、あらかじめガイドトラックやガイド番地を形成したフ
ォトマスク3を用い、該フォトマスク3を介してガラス
ディスク1に柴外線4を照射してフォトマスク3のガイ
ドトラッりやトラック番地(図中5で示した)のパター
ンをレジスト2に転写し、次に同図(c)のごとくレジ
スト2を現像した後、同図(d)のごとくCF4やCH
F3ガス中でのりアクチイプイオンエッチングでガラス
ディスク1にガイドトラックやトラック番地をきざみ、
最後に同図(d)の工程で残ったレジスト2を除去し、
同図(e)の如く基板を形成する。
One of the manufacturing methods for forming this guide track on the substrate of an optical memory element is a method disclosed in Japanese Patent Laid-Open No. 59-210547. This will be briefly explained using FIG. First, Figure 5 (
As shown in a), a resist film 2 coated with a spinner or the like is formed on a glass disk 1, and then as shown in FIG. The pattern of the guide tracks and track addresses (indicated by 5 in the figure) of the photomask 3 is transferred to the resist 2 by irradiating the glass disk 1 with the Shiba line 4 through the resist 2, and then as shown in the figure (c). After developing resist 2, as shown in the same figure (d), CF4 and CH
Mark guide tracks and track addresses on glass disk 1 using adhesive ion etching in F3 gas.
Finally, remove the resist 2 remaining in the step of the same figure (d),
A substrate is formed as shown in FIG. 2(e).

この従来方法において技術的に困難なのは、同図(b)
のガイドトラックやトラック番地のパターンの転゛写工
程である。すなわち、フォトマスク3とレジスト2とは
密着していることが望ましいが、従来では第6図のごと
くレジスト塗布時にレジスト膜2がガラスディスク1の
端面で一部もり上る現象6があり、そのだめレジスト膜
2とフォトマスク3との密着不良になる事が多かった。
The technical difficulty in this conventional method is shown in Figure (b).
This is the process of transferring the guide track and track address patterns. That is, it is desirable that the photomask 3 and the resist 2 are in close contact with each other, but in the past, as shown in FIG. Poor adhesion between the resist film 2 and the photomask 3 often occurred.

この密着不良部分の巾は1〜2fi程度である。同図の
フォトマスク3ではガイドトラック等のパターンは省略
している。
The width of this poor adhesion portion is about 1 to 2 fi. In the photomask 3 shown in the figure, patterns such as guide tracks are omitted.

く目 的〉 本発明は上記従来の欠点を解消するもので、ガラスディ
スク端面のレジストのもり上りによるレジストとフォト
マスクの密着不良を防ぐフォトマスクを提供することを
目的とする。
Purpose of the present invention The present invention solves the above-mentioned conventional drawbacks, and an object of the present invention is to provide a photomask that prevents poor adhesion between the resist and the photomask due to the rise of the resist on the end face of a glass disk.

〈実施例〉 以下本発明に係る光メモリ素子用のフォトマスクの実施
例を図面を用いて詳細に説明する。
<Example> Hereinafter, an example of a photomask for an optical memory device according to the present invention will be described in detail with reference to the drawings.

第1図は本発明に係る光メモリ素子用フォトマスクの一
実施例の一部拡大断面図である。同図に示す如く、フォ
トマスク7のガラスディスク1の端部に対向する場所に
レジスト6のもり上り部を吸収する溝8を形成すること
で、密着不良を除去する。
FIG. 1 is a partially enlarged sectional view of an embodiment of a photomask for an optical memory device according to the present invention. As shown in the figure, a groove 8 for absorbing the rising portion of the resist 6 is formed in a portion of the photomask 7 facing the end of the glass disk 1, thereby eliminating poor adhesion.

卆 この溝8は例えばガラスディスク1がσ130m±0.
1mの場合ならば、第2図に示すように直径127■の
ところから幅4mを持ち、その深さは0.2露〜0.5
■程度であることが望ましい。もちろんこの溝の断面形
状は第2図のごとく角型である必要は々く、第3図(a
)に示すごとく断面形状は三角形でもよいし、第3図(
b)に示すごとく半円形状でも良い。要するに、ガラス
ディスク1端部におけるレジスト6のもり上り部を吸収
する部分をフォトマスクに設ければよい。よってフォト
マスク7の端部を第4図に示すようにマスク中央部の厚
さよりも薄くして、その薄い部分でレジスト6のもり上
り部6を吸収することも可能である。
For example, the glass disk 1 has this groove 8 with a diameter of σ130m±0.
In the case of 1m, as shown in Figure 2, it has a width of 4m from a diameter of 127cm, and a depth of 0.2~0.5cm.
It is desirable that it be about ■. Of course, the cross-sectional shape of this groove does not necessarily have to be rectangular as shown in Figure 2;
) The cross-sectional shape may be triangular as shown in Figure 3 (
It may be semicircular as shown in b). In short, the photomask may be provided with a portion that absorbs the rising portion of the resist 6 at the end of the glass disk 1. Therefore, it is also possible to make the ends of the photomask 7 thinner than the center of the mask as shown in FIG. 4, and to absorb the rising portion 6 of the resist 6 at the thinner portions.

〈効 果〉 本発明によれば光メモリ素子のガイドトラックやトラッ
ク番地のパターンをフォトマスクを用いて光メモリ素子
用基板に塗布されたレジスト膜に良好に転写ができる。
<Effects> According to the present invention, patterns of guide tracks and track addresses of an optical memory element can be successfully transferred to a resist film coated on a substrate for an optical memory element using a photomask.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明に係る光メモリ素子用フォトマスクの一
実施例の一部拡大断面図、第2図はその全体の断面図、
第3図、第4図は他の実施例の一部拡大断面図、第5図
は従来のガイドトラック形成手順の説明図、第6図は従
来のフォトマスクの一部拡大断面図を示す。 図中、1ニガラスデイスク 2ニレジスト啜 3:フォトマスク  4:柴外線 5:パターン    6:レジスト 7二フオトマスク  8:溝 代理人 弁理士 福 士 愛 彦(他2名)第1図 第2図
FIG. 1 is a partially enlarged cross-sectional view of an embodiment of a photomask for an optical memory element according to the present invention, and FIG. 2 is a cross-sectional view of the entirety thereof.
3 and 4 are partially enlarged sectional views of other embodiments, FIG. 5 is an explanatory diagram of a conventional guide track forming procedure, and FIG. 6 is a partially enlarged sectional view of a conventional photomask. In the figure, 1. Nigarasu disk 2. Resist mask 3: Photomask 4: Shigai line 5: Pattern 6: Resist 7 Two photomask 8: Mizo agent Patent attorney Aihiko Fukushi (and 2 others) Figure 1 Figure 2

Claims (1)

【特許請求の範囲】 1、基板に塗布されたレジスト膜に対してパターンを転
写する為のフォトマスクであって、 前記レジスト膜の凸部に対応する位置に予め切り欠きが
形成されてなることを特徴とする光メモリ素子用フォト
マスク。
[Scope of Claims] 1. A photomask for transferring a pattern to a resist film applied to a substrate, the photomask having cutouts formed in advance at positions corresponding to the convex portions of the resist film. A photomask for optical memory devices characterized by:
JP60207864A 1985-08-30 1985-09-19 Photomask for optical memory device Expired - Fee Related JP2534226B2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP60207864A JP2534226B2 (en) 1985-09-19 1985-09-19 Photomask for optical memory device
DE8686306711T DE3682985D1 (en) 1985-08-30 1986-08-29 METHOD FOR PRODUCING AN OPTICAL DIRECTORY.
DE3689593T DE3689593T2 (en) 1985-08-30 1986-08-29 Optical storage element and method of making the same.
EP19860306711 EP0214824B1 (en) 1985-08-30 1986-08-29 Manufacturing method for an optical memory element
EP90203177A EP0434114B1 (en) 1985-08-30 1986-08-29 Optical memory element and manufacturing method thereof
US07/229,753 US4925776A (en) 1985-08-30 1988-08-08 Optical memory element and manufacturing method thereof
US08/074,272 US5470694A (en) 1985-08-30 1993-06-10 Optical memory element and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60207864A JP2534226B2 (en) 1985-09-19 1985-09-19 Photomask for optical memory device

Publications (2)

Publication Number Publication Date
JPS6266442A true JPS6266442A (en) 1987-03-25
JP2534226B2 JP2534226B2 (en) 1996-09-11

Family

ID=16546806

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60207864A Expired - Fee Related JP2534226B2 (en) 1985-08-30 1985-09-19 Photomask for optical memory device

Country Status (1)

Country Link
JP (1) JP2534226B2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5532250A (en) * 1978-08-25 1980-03-06 Matsushita Electric Ind Co Ltd Duplicating method for fine pattern
JPS59102235A (en) * 1982-12-03 1984-06-13 Sumitomo Electric Ind Ltd Photomask
JPS59210547A (en) * 1983-05-13 1984-11-29 Sharp Corp Manufacture of optical memory element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5532250A (en) * 1978-08-25 1980-03-06 Matsushita Electric Ind Co Ltd Duplicating method for fine pattern
JPS59102235A (en) * 1982-12-03 1984-06-13 Sumitomo Electric Ind Ltd Photomask
JPS59210547A (en) * 1983-05-13 1984-11-29 Sharp Corp Manufacture of optical memory element

Also Published As

Publication number Publication date
JP2534226B2 (en) 1996-09-11

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