JPS6254848A - Optical disc device using ferroelectric liquid crystal - Google Patents

Optical disc device using ferroelectric liquid crystal

Info

Publication number
JPS6254848A
JPS6254848A JP60173935A JP17393585A JPS6254848A JP S6254848 A JPS6254848 A JP S6254848A JP 60173935 A JP60173935 A JP 60173935A JP 17393585 A JP17393585 A JP 17393585A JP S6254848 A JPS6254848 A JP S6254848A
Authority
JP
Japan
Prior art keywords
liquid crystal
light
electrodes
pair
optical disc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60173935A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP60173935A priority Critical patent/JPS6254848A/en
Priority to CN86104886A priority patent/CN1018101B/en
Publication of JPS6254848A publication Critical patent/JPS6254848A/en
Priority to US07/166,798 priority patent/US4855976A/en
Priority to US07/717,191 priority patent/US5267224A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To make the titled device particularly effective when the rewriting times is comparatively high by using a liquid crystal therein. CONSTITUTION:The titled disc consists of a liquid crystal cell, a liquid crystal that shows ferroelectricity, and a light-reflecting layer. The optical disc also has a pair of counter substrate 3 and 7, at least one 3 of which is light- transmissivity. The pair of substrates 3 and 7 have a pair of electrodes 4 and 6 on their inner sides, one 4 of which is light-transmissivity while the other 6 is light-reflecting. And further, an orientation processing is applied to one of the electrodes and a non-orientation processing to the other, and between the, the liquid crystal 5 is packed. The periphery of this optical disc is sealed 30, 30' to prevent the liquid crystal from being subjected to the atmospheric air. It also has electrodes for external contacting 32 and 32' that extend from the pair of electrodes 4 and 6. The electrodes 32 and 32' are made contacting the terminals 31 and 31' of the lead wires 13 and 13' running from a signal source 25 at the time of writing or deleting 103.

Description

【発明の詳細な説明】 「発明の利用分野」 この発明は、染料が添加された書換可能な不揮発性メモ
リ作用を有する強誘電性液晶(以下液晶性物質という)
を用いた書換可能な光ディスク装置を提案することにあ
るi 「従来の技術」 光ディスク装置は、コンパクトディスクに代表されるよ
うに、レーザ光の反射面を有する凹凸面での反射具合を
利用して書換不可能なディジタル式ディスクメモリ装置
が知られている。この応用はオーディオ用、ビデオ用の
みならず、情報処理用の光ディスクメモリ装置としてき
わめて将来を有望視されている。しかしこれらディスク
メモリは書換が不可能である。このため、書換を可能と
する方式が求められ、その代表例として光磁気メモリ装
置が知られている。さらに、カルコゲン系(テルル系)
を用いたアモルファス半導体の光ディスクメモリ装置も
知られている。
DETAILED DESCRIPTION OF THE INVENTION Field of Application of the Invention This invention relates to a ferroelectric liquid crystal (hereinafter referred to as a liquid crystal substance) having a dye-added rewritable non-volatile memory function.
The purpose of the present invention is to propose a rewritable optical disc device that uses a Non-rewritable digital disk memory devices are known. This application is expected to have a very promising future as an optical disk memory device not only for audio and video but also for information processing. However, these disk memories cannot be rewritten. For this reason, a system that allows rewriting is required, and a magneto-optical memory device is known as a typical example. In addition, chalcogen (tellurium)
An amorphous semiconductor optical disk memory device using amorphous semiconductor is also known.

「発明が解決したいとする問題点」 しかし光磁気メモリを用いたディスク装置はきわめて高
価かつ希少材料を用いており、将来の多量生産に不安を
残す。またカルコゲン系アモルファス半導体を用いた方
法は光の制御がきわめて微妙である。
``Problems that the invention seeks to solve'' However, disk devices using magneto-optical memory use extremely expensive and rare materials, leaving concerns about future mass production. Furthermore, in the method using a chalcogen-based amorphous semiconductor, control of light is extremely delicate.

これらより、本来多量生産し得る材料を用いること、光
のオン、オフがより容易に行い得ること、不揮発性を有
し、メモリをストア(保持)する持回等の外部エネルギ
を必要としないこと、等の機能を有する手段が求められ
ていた。
From these, materials that can be produced in large quantities are used, the light can be turned on and off more easily, it is nonvolatile, and external energy such as memory storage is not required. There has been a need for a means that has functions such as .

本発明はかかる問題点を解決するものである。The present invention solves these problems.

「問題を解決するための手段」 かかる問題を解決するために、本発明は電極を互いに有
する一対の基板において、電極を有する面を内側にして
対向させて形成された液晶セルと、前記基板間にある不
揮発性メモリ作用を有し強誘電性を示す液晶と、液晶に
溶解し得る染料と、光を反射する層とを有することを特
徴とするものである。
"Means for Solving the Problem" In order to solve the problem, the present invention provides a liquid crystal cell formed by facing each other with the surfaces having the electrodes inside, in a pair of substrates each having electrodes, and a liquid crystal cell formed between the substrates. It is characterized by having a liquid crystal that has a nonvolatile memory function and exhibits ferroelectricity, a dye that can be dissolved in the liquid crystal, and a layer that reflects light.

本発明は、液晶材料としてカイラル(キラルともいうΣ
スメクチックC相(SmC”)を呈する強誘電性液晶(
以下FLCという)を用い、同時にアゾ系、アントラキ
ノン系等FLCに溶解し得る染料を用いている。以下こ
れら液晶材料と染料とを混合した物を液晶性物質と呼ぶ
The present invention uses chiral (also called chiral Σ) as a liquid crystal material.
A ferroelectric liquid crystal exhibiting a smectic C phase (SmC”)
FLC (hereinafter referred to as FLC) is used, and at the same time, azo-based, anthraquinone-based, or other dyes that can be dissolved in FLC are used. Hereinafter, a mixture of these liquid crystal materials and dyes will be referred to as a liquid crystal substance.

非対称配向処理あるいは前記処理にさらにラビング等の
いわゆる配向処理を行った基板を用い、4μmあるいは
それ以下のセル間隔を有するセルを形成し、その中に前
記液晶性物質を封入し、SmC”相を呈する温度範囲に
保持することにより、らせん構造を消失させることがで
き、双安定な状態を得ることができた。
Using a substrate that has been subjected to an asymmetric alignment treatment or a so-called alignment treatment such as rubbing in addition to the above treatment, cells having a cell spacing of 4 μm or less are formed, and the liquid crystalline substance is sealed in the cells, and the SmC'' phase is formed. By maintaining the temperature within this range, the helical structure could be eliminated and a bistable state could be obtained.

かかる多極子が一方向にそろった状態において、一対を
構成する両電極間に電圧を印加すると、液晶分子の持つ
多極子の向きが逆の一方向に揃い、理想状態としては初
期の一方向と逆の一方向との間に発生するその角度は約
90″となる。
When such multipoles are aligned in one direction, when a voltage is applied between the two electrodes forming the pair, the orientation of the multipoles of the liquid crystal molecules is aligned in the opposite direction, and the ideal state is that of the initial one direction. The angle that occurs with the opposite direction is approximately 90''.

そしてこの2つの状態は電圧を切っても変化しない不揮
発性(パイスタビリテイ)を有し、本発明はかかる約9
06のコーンアングルを有する不揮発性メモリ作用を用
いている。
These two states have non-volatility (pistability) that does not change even if the voltage is cut off, and the present invention
A non-volatile memory function with a cone angle of 0.06 is used.

本発明の光ディスクはそれぞれが電極を有する一対の基
板をその電極を有する面を互いに内側にして対抗せしめ
、その電極間に、前記したSmC”相を呈する液晶性物
質を充填する。本発明はセルを構成する一対の基板(光
の入射側を対抗電極、内部側(奥側)を単に基板という
)とその内側に配設されている電極(光の入射側の電極
を対抗電極、内部側を単に電極という)さらにその一方
の電極表面を配向処理せしめ、か”っ電極間に封入され
た液晶性物質とを有する。
In the optical disk of the present invention, a pair of substrates each having an electrode are placed against each other with the surfaces having the electrodes facing each other, and the space between the electrodes is filled with a liquid crystalline substance exhibiting the above-mentioned SmC'' phase. A pair of substrates (the light incident side is called the counter electrode, the inner side (back side) is simply called the substrate) and the electrodes arranged inside it (the light incident side is called the counter electrode, the inner side is called the counter electrode, and the inner side is called the substrate). (simply referred to as electrodes) Furthermore, the surface of one of the electrodes is subjected to alignment treatment, and the liquid crystal material is sealed between the electrodes.

特に本発明は、この光ディスクに対し光ビーム特に好ま
しくは半導体レーザ光を反射する層を有する。さらに好
ましくはこの光ビームの反射面として1つの電極即ち基
板上の電極により併用構成せしめる。
In particular, the present invention provides the optical disc with a layer that reflects light beams, particularly preferably semiconductor laser light. More preferably, one electrode, that is, an electrode on the substrate, is used as a reflection surface for this light beam.

その場合、入射光の経路はレーザ光源よりハーフミラ−
を経て対抗基板、対抗電極、液晶性物質、電極、さらに
ここで反射され、逆の経路を辿る。
In that case, the path of the incident light is from the laser light source to the half mirror.
The light travels through the counter substrate, counter electrode, liquid crystal material, electrode, and is reflected here, following the opposite path.

そしてディスクより出た反射光はハーフミラ−にて反射
され、偏光板を経てフォトセンサに至る。
The reflected light emitted from the disk is reflected by a half mirror, passes through a polarizing plate, and reaches a photosensor.

そして液晶性物質の位相と偏光板の位相との位相差が合
致した場合、透光性となる。しかしこのビーム光が偏光
板とその位相角をずらせていると非透過または難透過と
なる。その結果、偏光板からの透過量が十分なコントラ
ストを有するならば光が照射された番地のrOJ、rl
Jの判定が可能となる。
When the phase difference between the phase of the liquid crystalline substance and the phase of the polarizing plate matches, it becomes translucent. However, if the phase angle of this beam light is shifted from that of the polarizing plate, it will not be transmitted or will be difficult to transmit. As a result, if the amount of transmission from the polarizing plate has sufficient contrast, rOJ, rl of the address irradiated with light
J can be determined.

かかる光ディスクの記憶の「書消し」 「書き込み」及
び「読み出し」を以下に概説する。
``Writing/erasing'', ``writing'', and ``reading'' of such optical disk storage will be outlined below.

即ち記憶の「書消し」はこの液晶性物質に正または負の
所定の電圧をこのディスクの全面に一対の電極より加え
ることにより実施する。
That is, "writing and erasing" the memory is carried out by applying a predetermined positive or negative voltage to the liquid crystal material over the entire surface of the disk from a pair of electrodes.

この書き込み情報のすべての書消しを行うには一対の電
極に前記した「書消し」と同じ極性の電圧を印加すれば
よい。即ちこのビット単位の占き込みおよびディスク全
面の書消しを繰り返し行うことができる。
In order to erase all of the written information, it is sufficient to apply a voltage of the same polarity as the above-mentioned "erasing" to the pair of electrodes. That is, this bit-by-bit reading and writing and erasing of the entire disk can be repeated.

また所定の番地の「書き込み」はディスクの回転速度及
び中央部よりの所定の距離に対し液晶性物質の配向角を
みだす程度に強いビーム光または熱を照射する。さらに
または電気的に十分な書き込みが行われない程度に弱い
書き消しとは逆方向の電圧を印加し、これに光または熱
を加える。するとその番地のみは液晶性物質の双極子の
方向が初期の状態と異なる方向に配される。かくするこ
とにより初期状態を「0」とするならば、光照射により
「1」とすることができる。
Further, in order to "write" a predetermined address, a beam of light or heat strong enough to exceed the orientation angle of the liquid crystal material is irradiated at the rotational speed of the disk and at a predetermined distance from the center. Furthermore, a voltage in the opposite direction to writing and erasing is applied, which is so weak that electrical writing is not performed sufficiently, and light or heat is applied thereto. Then, only at that address, the dipole direction of the liquid crystal material is arranged in a direction different from the initial state. If the initial state is set to "0" in this manner, it can be set to "1" by light irradiation.

記憶の「読み出し」は前記した如く、半導体レーザの所
定の番地に対し光ビーム例えばレーザ光を照射し、その
反射光を偏光板を介してフォトセンサにて検出する。
As described above, "reading" of the memory is performed by irradiating a light beam, such as a laser beam, onto a predetermined address of the semiconductor laser, and detecting the reflected light by a photosensor via a polarizing plate.

「作用」 かくすることにより、 (1)偏向板をフォトセンサ部に配設し、その板が1枚
のため光の損失を少なくできる。
"Function" By doing so, (1) the deflection plate is disposed in the photosensor section, and since there is only one plate, the loss of light can be reduced.

(2)光ディスクの上面、下面に偏光板を設ける必要が
なく、取扱が容易にできる。
(2) There is no need to provide polarizing plates on the top and bottom surfaces of the optical disk, making it easy to handle.

(3)反射光用電極が大気に触れないため、酸化される
ことなく、反射率を高く保つことができる。
(3) Since the reflected light electrode does not come into contact with the atmosphere, it is not oxidized and can maintain high reflectance.

(4)不揮発性メモリとして液晶性物質を用いるため、
メモリの「書き込み」を高スピード(マイクロ秒のオー
ダ)で実施可能であり、また「書消し」はディスクの全
面に対し瞬時に行い得る。書換プロセスでの繰り返しに
よる疲労が本質的にない。
(4) Since liquid crystal substances are used as nonvolatile memory,
"Writing" to memory can be performed at high speed (on the order of microseconds), and "writing and erasing" can be performed instantaneously to the entire surface of the disk. There is essentially no fatigue due to repetition in the rewriting process.

(5)液晶性物質の使用材料が特殊な元素材料を用いる
ことなくかつ部品点数が少ないため安価であることを期
待できる。
(5) Since the liquid crystal material used does not require special elemental materials and has a small number of parts, it can be expected to be inexpensive.

(6)液晶性物質を用いるため不揮発性であり、その記
憶保持のため新たなエネルギを必要とせず、省エネルギ
である。
(6) Since it uses a liquid crystal substance, it is non-volatile and does not require new energy to retain its memory, resulting in energy savings.

(7)書換に伴う液晶性物質の2つのチルト角(一般に
はコーン・アングルの172となる)は互いに約45″
異なり、それは液晶性物質固有で・あるため劣化が木質
的にないことが期待できる。
(7) The two tilt angles (generally the cone angle is 172) of the liquid crystal material due to rewriting are approximately 45" from each other.
However, since it is unique to liquid crystal materials, it can be expected that there will be no deterioration in terms of wood quality.

以下に実施例に従って本発明を説明する。The present invention will be explained below according to examples.

「実施例1」 第1図は本発明の光ディスクメモリ装置の方式第1の系
(100)は情報の「読み出し」用であり第2の系(1
01)は情報の「書き込み」用である。
"Embodiment 1" FIG. 1 shows a system of an optical disk memory device according to the present invention.The first system (100) is for "reading" information, and the second system (100)
01) is for "writing" information.

また(103)は情報の「書消し」用である。ディスク
はく10)により示す。
Further, (103) is for "erasing" information. This is indicated by a disc foil 10).

光ディスクは一対の対抗基板(3)及び基板(7)を有
する。一方の対抗基板(3)は少なくとも透光性である
。さらにその一対の基板の内側には一対の電極(4) 
、 (6)を有する。そして対抗電極(4)は透光性を
有し、また電極(6)は反射性を有する。
The optical disc has a pair of opposing substrates (3) and a substrate (7). One opposing substrate (3) is at least transparent. Furthermore, a pair of electrodes (4) are located inside the pair of substrates.
, has (6). The counter electrode (4) has a translucent property, and the electrode (6) has a reflective property.

さらにその一対の電極の一方に配向処理がなされ他方に
非配向処理がなされている。さらにその電極間には液晶
物質(5)が充填される。
Further, one of the pair of electrodes is subjected to an alignment treatment, and the other is subjected to a non-alignment treatment. Furthermore, a liquid crystal substance (5) is filled between the electrodes.

この光ディスクは周辺を液晶性物質が大気に触れないよ
うに封止(30) 、 (30’ )されている。この
光ディスクは(10)の内側には一対の電極(4) 、
 (7)より延在した外部コンタクト用電極(32) 
、 (32’)を有する。この外部コンタクト用電極(
32) 、 (32’ )とは記憶の書消しく103)
の際その信号源(25)より導出したリード(13) 
、 (13’ )の端子(31)、(31“)と接続さ
れ「書消し」を行わせる。
The periphery of this optical disk is sealed (30), (30') to prevent the liquid crystal material from coming into contact with the atmosphere. This optical disc has a pair of electrodes (4) inside (10),
(7) More extended external contact electrode (32)
, (32'). This external contact electrode (
32), (32') means erasing memory 103)
The lead (13) derived from the signal source (25)
, (13') are connected to terminals (31) and (31") to perform "erasing".

かくして全面が「0」の状態のディスクに対し情報の「
書き込み」を系(101)を用いて行う。即ち全面に一
方向に配設した液晶性物質に対し、光ビーム特に赤外線
を(23)よりハーフミラ−(22)を経、集光光学系
、位置補正等の系(21)を経て所定の番地に対し光を
照射(25) L、所定の番地の位相を初期状態よりず
らすことにより書き込みを行う。
In this way, for a disk whose entire surface is "0", the information "
"Writing" is performed using the system (101). In other words, a light beam, especially infrared rays, is directed to a liquid crystal material arranged in one direction on the entire surface of the material at a predetermined address via (23), a half mirror (22), a condensing optical system, a position correction system, etc. (21). Light is irradiated to (25) L, and writing is performed by shifting the phase of a predetermined address from the initial state.

さらにその光はハーフミラ−(22)を経てフォトセン
サ(9)に至る。ここで情報の書き込みが行われている
ことをモニタする。その際適量の光強度となるように(
24)にて補正をする。
Further, the light passes through a half mirror (22) and reaches a photosensor (9). Monitor whether information is being written here. At that time, make sure that the light intensity is appropriate (
24).

情報の「読み出し」に関しては系(100)を用いる。The system (100) is used for "reading" information.

即ち、半導体レーザ(12)よりの光ビームはハーフミ
ラ−(2)をへて集光光学系、位置の補正(オートトラ
ッキング装置)(11)を経て、光ディスク(10)に
光(16)を入射する。さらにこの光ディスク(10)
より光が(16’)として反射し、ハーフミラ−(2)
により光路を分離し偏光板(8)を経て受光センサ(9
)に至る。
That is, the light beam from the semiconductor laser (12) passes through the half mirror (2), the condensing optical system, the position correction (auto tracking device) (11), and the light (16) is incident on the optical disk (10). do. Furthermore, this optical disc (10)
More light is reflected as (16'), half mirror (2)
The optical path is separated by
).

この光ディスクに関し以下にさらに具体的に示す。This optical disc will be described in more detail below.

即ちプラスチック基板例えばアクリル樹脂またはコーニ
ング7059ガラス基板(7)を用いた。この基板上に
反射性電極としてアルミニュームを真空蒸着法により一
方の電極(6)とした。また他方の対抗電極として透光
性導電膜(4)をプラスチック基板またはガラス基板(
対抗基Fi)(3)上に形成する。さらにこのガラス基
板(3)上にはITO(酸化インジューム・スズ)を形
成した。そしてこの一対の電極(6)、対抗電極(4)
の内側に非対称配向膜を設け、スペーサ(図示せず)を
介在させる。これらによりFLC(厚さ1.5μ)を挟
んである。配向処理として対抗電極(4)上にはPAN
 (ポリアクリルニトリル”) 、 PVA (ポリビ
ニールアルコール)等の有機樹脂膜を0.1 μの厚さ
にスピン法により設け、公知のラビング処理をした。ラ
ビング処理の一例として、ナイロンをラビング装置にて
900 PPMで回転させて、その表面を2m/分(周
辺部)の速度で「書き込み」、「書き消し」の際のディ
スクの回転と同一方向に基板を回転移動させて形成した
That is, a plastic substrate such as an acrylic resin or a Corning 7059 glass substrate (7) was used. One electrode (6) was made of aluminum as a reflective electrode by vacuum evaporation on this substrate. In addition, a transparent conductive film (4) is used as the other counter electrode on a plastic substrate or a glass substrate (
Opposing group Fi) is formed on (3). Furthermore, ITO (indium tin oxide) was formed on this glass substrate (3). And this pair of electrodes (6), counter electrode (4)
An asymmetrical alignment film is provided inside the film, and a spacer (not shown) is interposed therebetween. An FLC (thickness: 1.5 μm) is sandwiched between these. PAN is applied on the counter electrode (4) as an orientation treatment.
(Polyacrylonitrile), PVA (Polyvinyl Alcohol), or other organic resin film was applied to a thickness of 0.1 μ by a spin method and subjected to a known rubbing process.As an example of the rubbing process, nylon was placed in a rubbing device. The disk was rotated at 900 PPM, and the surface was "written" at a speed of 2 m/min (periphery), and the substrate was rotated in the same direction as the rotation of the disk during "writing and erasing".

即ち一方の電極(6)上には無機化合物の膜を形成して
ラビング処理を行わない配向膜とし、他方の電極(4)
には有機化合物の膜を形成しラビング処理を行った。配
向膜としてさらにこの間には液晶性物質例えばS8(オ
クチル・オキシ・ベンジリデン・アミノ・メチル・ブチ
ル・ベンゾエイト)を充填した。これ以外でもDOBA
MBC等の液晶性物質または複数のブレンドを施した液
晶性物質を充填し得る。その−例としては、Ferro
electrics1984 Vol、59 pp12
6〜136 J、W、GoodbyらによりFerro
electrics Switching in th
e Titled Smec−tic Phase o
f  R−C−3−4−n−Hexyloxydenz
ylidene4’ −Am’ no−(2−Ch 1
oropropyl) (innama te (HO
BACPC) +特開昭59−98051.特開昭59
−118744を用いてもよい。この液晶性物質のしき
い値特性例を第2図に示す。図面でも±15V加えるこ
とによって、曲線(29)、 (29”)を得、透過、
非透過をさせ得、十分反転させるとともにメモリ効果を
示すヒステリシスを得ることが判明した。第2図におい
て縦軸は透過率である。
That is, an inorganic compound film is formed on one electrode (6) to serve as an alignment film that is not subjected to rubbing treatment, and the other electrode (4) is coated with an inorganic compound film.
A film of an organic compound was formed and rubbed. A liquid crystal material such as S8 (octyl oxy benzylidene amino methyl butyl benzoate) was further filled in this space as an alignment film. Other than this, DOBA
It may be filled with a liquid crystal material such as MBC or a blend of a plurality of liquid crystal materials. For example, Ferro
electronics1984 Vol, 59 pp12
6-136 Ferro by J. W. Goodby et al.
electronics Switching in th
e Titled Smec-tic Phase o
f R-C-3-4-n-Hexyloxydenz
ylidene4'-Am' no-(2-Ch 1
oropropyl) (innamate (HO
BACPC) + JP-A-59-98051. Japanese Unexamined Patent Publication 1983
-118744 may also be used. An example of the threshold characteristic of this liquid crystal material is shown in FIG. In the drawing, by adding ±15V, curves (29) and (29”) are obtained, and the transmission,
It has been found that it is possible to make the film non-transparent and to obtain sufficient reversal and hysteresis exhibiting a memory effect. In FIG. 2, the vertical axis is the transmittance.

さらにこのヒステリシスに関し、本発明においては、光
書き込みを行う。例えば書き消しはディスク全体を一1
5Vとしてすべての番地を0”とすればよい。チルト角
は約−45Vになる。書き込みは全体に対し正のスレッ
シュホールド電圧に至らない弱い電圧を加える。例えば
−17Vを加える。さらに書き込みを行い、番地に対し
書き込み用のレーザ光を照射する。するとこの所定の番
地の温度が上昇し、この後この温度はレーザ光の照射が
なくなった後徐冷がなされた際、正の電圧により推定さ
れた方向のチルト角は+20〜+45 °にさせること
ができる。特にレーザ光の波長が1〜3μを有すると、
この光の大部分を液晶物質は吸収する。加えてこの書換
の際に加わる正の電圧によりその吸収係数が変化する。
Furthermore, regarding this hysteresis, optical writing is performed in the present invention. For example, erasing erases the entire disk.
5V and all addresses should be set to 0''.The tilt angle will be about -45V.For writing, apply a weak voltage that does not reach the positive threshold voltage to the whole.For example, add -17V.Further write. , the address is irradiated with a laser beam for writing.Then, the temperature of this predetermined address rises, and this temperature is estimated by the positive voltage when the laser beam is no longer irradiated and the temperature is slowly cooled. The tilt angle in the direction can be set to +20 to +45°.Especially when the wavelength of the laser beam is 1 to 3μ,
Liquid crystal materials absorb most of this light. In addition, the absorption coefficient changes due to the positive voltage applied during this rewriting.

このため例えば1.2μmの波長のレーザ光を照射する
場合は約10Vを、また2μmの波長のレーザ光を照射
する場合は約6vと少ない電界を加えると好ましい。
For this reason, for example, it is preferable to apply a small electric field of about 10 V when irradiating a laser beam with a wavelength of 1.2 μm, and about 6 V when irradiating a laser beam with a wavelength of 2 μm.

即ち、本発明において、書き込みはスポット状にレーザ
光の照射の有無に加えて、基礎バイヤス電圧を印加する
方法を採用した。さらに書き消しは全体をスレッシュホ
ールド電圧より十分大きな逆方向バイヤスを加えた。
That is, in the present invention, writing is performed by applying a basic bias voltage in addition to spot-like laser beam irradiation. Furthermore, for writing and erasing, a reverse bias sufficiently larger than the threshold voltage was applied to the entire circuit.

しかし、書き消しに対しても、局部的に行う場合はレー
ザ光にて行い、またこれを逆方向の基礎バイヤス電圧を
加えれば成就させ得る。
However, writing and erasing can also be accomplished locally by using a laser beam and by applying a basic bias voltage in the opposite direction.

「効果」 以上の説明より明らかな如く、本発明の光ディスクメモ
リ装置は液晶性物質を用いるため書換回数が比較的多い
場合に特に有効である。
"Effects" As is clear from the above explanation, the optical disk memory device of the present invention uses a liquid crystal material, and is therefore particularly effective when the number of rewrites is relatively large.

本発明の光学系は「読み出し」と「書き込み」とを異な
る光学系を用いた。しかし、他の方式としてジグ(21
)を略し、光源(23)よりの光をハーフミラ−等によ
り光路(16) 、 (16’)と同じとし得ることは
可能である。しかしこの場合は「書き込み」ト「読み出
し」の光量が10倍近く異なるため、部凸点数は少なく
なるが光路設計が面倒になる欠点を有する。
The optical system of the present invention uses different optical systems for "reading" and "writing." However, another method is the jig (21
) can be omitted and the light from the light source (23) can be made the same as the optical path (16), (16') by using a half mirror or the like. However, in this case, the amount of light for ``writing'' and ``reading'' differs by a factor of nearly 10, so although the number of protrusions is reduced, it has the disadvantage that optical path design becomes complicated.

さらに本発明を一部修正した方式として、偏光板が「書
き消し」または「書きこみ」において耐えることができ
るならば、ディスクの光照射面側に配設することは可能
である。
Further, as a partially modified method of the present invention, if the polarizing plate can withstand "writing/erasing" or "writing", it is possible to arrange it on the light irradiation surface side of the disk.

かかる方式において、書換えは先方式のため、・メモリ
容量がきわめて大きいという特長を有する。
In this method, since rewriting is performed by the first method, the memory capacity is extremely large.

本発明の実質的応用は単に民生用のコンパクトディスク
のみならず、大容量のファイルメモリに対しても有効で
ある。またディスクも円形状で回転方式であるが、ディ
スクを固定し、光路を移動させる方式等の応用も可能で
ある。
The practical application of the present invention is effective not only for consumer compact discs but also for large-capacity file memories. Furthermore, although the disk is circular and rotates, it is also possible to use a method in which the disk is fixed and the optical path is moved.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の光ディスクメモリ装置の概略を示す。 第2図は強誘電性液晶の動作特性を示す。 FIG. 1 schematically shows an optical disc memory device of the present invention. FIG. 2 shows the operating characteristics of a ferroelectric liquid crystal.

Claims (1)

【特許請求の範囲】 1、電極を互いに有する一対の基板において、電極を有
する面を内側にして対向させ形成された液晶セルと、前
記基板間に染料が添加された不揮発性メモリ作用を有す
る強誘電性を示す液晶と、光を反射する層とを有するこ
とを特徴とする強誘電性液晶を用いた光ディスク装置。 2、特許請求の範囲第1項において、前記強誘電性液晶
としては、スメクチックC相を呈するものであり、チル
ト角約45°またはその近傍であることを特徴とする強
誘電性液晶を用いた光ディスク装置。 3、特許請求の範囲第1項において、前記液晶に溶解し
得る染料としては、アントラキノン系、アゾ系等二色性
比(CR)=8以上である二色性染料を用いることを特
徴とする強誘電性液晶を用いた光ディスク装置。
[Claims] 1. A liquid crystal cell formed of a pair of substrates having electrodes facing each other with the surfaces having the electrodes facing each other, and a strong liquid crystal cell having a non-volatile memory function in which a dye is added between the substrates. An optical disc device using a ferroelectric liquid crystal characterized by having a liquid crystal exhibiting dielectric properties and a layer reflecting light. 2. In claim 1, the ferroelectric liquid crystal is a ferroelectric liquid crystal exhibiting a smectic C phase and having a tilt angle of about 45° or around 45°. Optical disk device. 3. In claim 1, the dye that can be dissolved in the liquid crystal is a dichroic dye having a dichroic ratio (CR) of 8 or more, such as an anthraquinone dye or an azo dye. Optical disk device using ferroelectric liquid crystal.
JP60173935A 1985-06-14 1985-08-07 Optical disc device using ferroelectric liquid crystal Pending JPS6254848A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP60173935A JPS6254848A (en) 1985-08-07 1985-08-07 Optical disc device using ferroelectric liquid crystal
CN86104886A CN1018101B (en) 1985-08-07 1986-07-31 Nonvolatille optical disc memory with liquid crystal
US07/166,798 US4855976A (en) 1985-06-14 1988-03-03 Information writing method for an optical disc memory system utilizing a smectic chiral liquid crystal
US07/717,191 US5267224A (en) 1985-08-07 1991-06-18 Liquid crystal memory device including an organic ferroelectric layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60173935A JPS6254848A (en) 1985-08-07 1985-08-07 Optical disc device using ferroelectric liquid crystal

Publications (1)

Publication Number Publication Date
JPS6254848A true JPS6254848A (en) 1987-03-10

Family

ID=15969794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60173935A Pending JPS6254848A (en) 1985-06-14 1985-08-07 Optical disc device using ferroelectric liquid crystal

Country Status (1)

Country Link
JP (1) JPS6254848A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5700423A (en) * 1994-08-26 1997-12-23 Praxair S.T. Technology, Inc. Hearth roll with superior endurance capacity

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57120235A (en) * 1981-12-04 1982-10-30 Yokogawa Hewlett Packard Ltd Storage device
JPS58125247A (en) * 1982-01-21 1983-07-26 Tdk Corp Optical recording medium
JPS5994733A (en) * 1982-11-22 1984-05-31 Oki Electric Ind Co Ltd Optical recording medium
JPS60178092A (en) * 1984-02-27 1985-09-12 Tdk Corp Optical recording medium

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57120235A (en) * 1981-12-04 1982-10-30 Yokogawa Hewlett Packard Ltd Storage device
JPS58125247A (en) * 1982-01-21 1983-07-26 Tdk Corp Optical recording medium
JPS5994733A (en) * 1982-11-22 1984-05-31 Oki Electric Ind Co Ltd Optical recording medium
JPS60178092A (en) * 1984-02-27 1985-09-12 Tdk Corp Optical recording medium

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5700423A (en) * 1994-08-26 1997-12-23 Praxair S.T. Technology, Inc. Hearth roll with superior endurance capacity

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