JPS6250811B2 - - Google Patents
Info
- Publication number
- JPS6250811B2 JPS6250811B2 JP13648380A JP13648380A JPS6250811B2 JP S6250811 B2 JPS6250811 B2 JP S6250811B2 JP 13648380 A JP13648380 A JP 13648380A JP 13648380 A JP13648380 A JP 13648380A JP S6250811 B2 JPS6250811 B2 JP S6250811B2
- Authority
- JP
- Japan
- Prior art keywords
- intensity
- transparent
- amplitude
- projected
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005286 illumination Methods 0.000 claims description 18
- 230000001427 coherent effect Effects 0.000 description 15
- 238000009826 distribution Methods 0.000 description 8
- 230000003993 interaction Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
【発明の詳細な説明】
本発明は、光学的な像の再生、特に、透過照明
により照明されレンズ系によつて投影される被投
影原版に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to optical image reproduction, in particular to a projected original that is illuminated by transillumination and projected by a lens system.
従来、フオトエツチング等に用いられる原版に
は、透明部と不透明部とにより所定のパターンが
形成されており、これをレンズ系により感光膜面
上に投影する手法が知られている。このようなあ
るパターンをレンズにより投影する場合には、回
折現象のために再生像には解像限界があることは
周知である。そして、理論的な限界値としてのカ
ツトオフ周波数は、一般に、投影レンズの開口数
をNA、使用光線の波長をλとすると、インコヒ
ーレント照明では2NA／λ（本／mm）、またコヒ
ーレント照明ではNA／λ（本／mm）であり、投
影レンズの開口数を大きくしない限りある波長に
対する解像を高めることは不可能とされている。 Conventionally, a predetermined pattern is formed on an original plate used for photoetching or the like by transparent and opaque parts, and a method is known in which this pattern is projected onto the surface of a photoresist film using a lens system. It is well known that when such a pattern is projected using a lens, there is a resolution limit to the reproduced image due to diffraction phenomena. The cutoff frequency as a theoretical limit value is generally 2NA/λ (lines/mm) for incoherent illumination, and NA for coherent illumination, where NA is the numerical aperture of the projection lens and λ is the wavelength of the light beam used. /λ (lines/mm), and it is said that it is impossible to increase the resolution for a certain wavelength unless the numerical aperture of the projection lens is increased.
本発明の目的は、従来と同一の波長光及び同一
の投影レンズを用いながら、解像限界を従来以上
に高めることが可能な被投影原版を提供すること
にある。 An object of the present invention is to provide an original to be projected, which can raise the resolution limit more than ever while using the same wavelength light and the same projection lens as in the past.
本発明による被投影原版は、透明部と不透明部
とで形成された所定のパターンを有し、コヒーレ
ントな透過照明によつて用いられるものであつ
て、不透明部をはさむ両側の透明部のうちの少な
くとも一方に位相部材を設け、両側の透明部に位
相差を生ずる構成としたものである。 The projection master according to the present invention has a predetermined pattern formed of a transparent part and an opaque part, and is used for coherent transmitted illumination. A phase member is provided on at least one side to create a phase difference between the transparent parts on both sides.
以下、本発明の原理について説明する。第１図
には、透明部１と不透明部２とが交互に並んだ一
般的格子の断面及び、この格子の投影像の振幅分
布の様子を併せて示した。図示のごとく、透明な
部分１からの光は回折現象によつて不透明な部分
２にも拡がり、このため分解できる格子の間隔Δ
に限界が生ずる。そして、２つの部分からの光の
相互作用については、インコヒーレント照明では
強度の相互作用が働くのに対し、コヒーレント照
明では振幅の相互作用が働く。また強度は振幅の
２乗で与えられるので、振幅の拡がりの方が強度
の拡がりより大きくなる。従つて、一般的にはコ
ヒーレント照明では解像限界が低下することが定
性的に説明される。 The principle of the present invention will be explained below. FIG. 1 also shows a cross section of a general grating in which transparent parts 1 and opaque parts 2 are arranged alternately, and the amplitude distribution of a projected image of this grating. As shown in the figure, the light from the transparent part 1 spreads to the opaque part 2 due to the diffraction phenomenon, so that the grating interval Δ which can be resolved is
There are limits to this. Regarding the interaction of light from the two parts, incoherent illumination involves an intensity interaction, while coherent illumination involves an amplitude interaction. Furthermore, since the intensity is given as the square of the amplitude, the spread of the amplitude is larger than the spread of the intensity. Therefore, it is qualitatively explained that coherent illumination generally lowers the resolution limit.
しかしながら、コヒーレント照明であつても、
２つの部分からの光に位相差がある場合には解像
を高めることが可能である。第２図には、２つの
点光源がレーレーの解像限界の距離にある時に、
(a)２つの光源がインコヒーレントな場合、(b)２つ
の光源がコヒーレントで位相が一致している場
合、(c)２つの光源がコヒーレントで180゜位相が
ずれている場合の３つの場合について、それぞれ
その強度分布を示した。第２図から分るように、
インコヒーレントな２点が解像されるとき、位相
の一致したコヒーレントな２点は解像されない。
これが、一般にコヒーレント照明による場合に、
解像限界が下ることに対応している。しかし、位
相が180゜ずれたコヒーレントな２点について
は、インコヒーレントの場合よりもはるかに良く
解像されている。尚、このような２つの点光源に
ついての解析は「波動と映像」（佐藤択宋、上田
光宏、共著、森北出版）の62頁〜64頁に詳しい。 However, even with coherent illumination,
If there is a phase difference between the light from the two parts, it is possible to increase the resolution. Figure 2 shows that when two point light sources are at the distance of Rayleigh's resolution limit,
Three cases: (a) the two light sources are incoherent, (b) the two light sources are coherent and in phase, and (c) the two light sources are coherent and 180° out of phase. The intensity distribution for each is shown. As you can see from Figure 2,
When two incoherent points are resolved, two coherent points in phase are not resolved.
When this is generally done by coherent illumination,
This corresponds to the lowering of the resolution limit. However, two coherent points 180° out of phase are resolved much better than the incoherent case. A detailed analysis of these two point light sources can be found on pages 62 to 64 of ``Wave and Image'' (co-authored by Isao Sato and Mitsuhiro Ueda, Morikita Publishing).
本発明は、上述のごとく位相が180゜ずれたコ
ヒーレントの場合に解像が高まることに着目し、
上記のごとく構成したものである。第３図には、
本発明の一例として、透明部１と不透明部２とか
ら成る格子原版において、透明部の１つにλ／２
板３を設けたものの断面を示し、併せてこれをコ
ヒーレント照明によつて投影された像の振幅分布
の様子を実線で、また強度分布の様子を破線で示
した。第３図に示された３つの透明部のうち両外
側の透明部の像の振幅は従来と同じ状態である
が、こられの間の透明部の像の振幅はλ／２板３
の存在により振幅は反転する。従つて、不透明部
に達する光は、互いに打消され、不透明部での光
強度はほぼ零となつて、解像限界が向上する。 The present invention focuses on the fact that the resolution increases when the phase is shifted by 180° as described above,
It is configured as described above. In Figure 3,
As an example of the present invention, in a grid master plate consisting of a transparent part 1 and an opaque part 2, one of the transparent parts has a λ/2
A cross section of the plate 3 is shown, and the amplitude distribution of the image projected by coherent illumination is shown by a solid line, and the intensity distribution is shown by a broken line. Among the three transparent parts shown in FIG. 3, the amplitude of the image of the outer transparent parts is the same as before, but the amplitude of the image of the transparent part between them is the same as that of the λ/2 plate 3.
The amplitude is reversed due to the presence of . Therefore, the light reaching the opaque area cancels each other out, and the light intensity at the opaque area becomes almost zero, improving the resolution limit.
このような解像限界の向上は、空間周波数で考
えれば、λ／２板のために格子の振幅の基本周期
がΔから２Δとなり、振幅の基本周波数が1/2と
なり、レンズの開口数で決まるカツトオフ周波数
により従来では通過できなかつた基本周波数が通
過できるようになつたことによる。これはさら
に、物体にコヒーレンシイのある場合の像の強度
に関する式として、「フーリエ結像論」（小瀬輝次
著、共立出版）の第61頁に記載された（3.24）式
によつて説明される。すなわち、この時の像の強
度J12（ＸD）は、
と表わされ、ここでＸDは像面上の座標、
x1は瞳上の座標
θ（x1）は物体の振幅透過率のフーリエ成分を
それぞれ表わし、＊は複素共役を意味する。また
Ｒ（x1，x2）はｉと呼ばれる。λ／２板の無い普
通の格子においては、基本周波数を０とする
と、Ｒ（０，０）の減衰が強度の基本周波数の
利得に最も大きく影響し、これによる強度の空間
周波数は、上式の被積分関数の位相項より、x1−
x2＝０−０＝０となる。一方、λ／２板を設
けた本発明による格子では、物体の振幅透過率の
フーリエ成分θ（x1）のうちx1＝０の成分がな
く、基本周波数が1/2になり、Ｒ（γ０／２，０）では
なくＲ（γ０／２，γ０／２）が強度の基本周波数の利
得に
最も影響してくる。そして、強度の空間周波数
は、x1−x2＝０／２−（−０／２）＝０とな
る。従つて、λ／２板の無い場合には、０の周
波数の強度を再生するためには、０の周波数の
振幅が通過しなくてはならないが、λ／２板を設
けた場合には、同じ０の周波数の強度を再生す
るために０／２の周波数の振幅が通過すればよ
い。これが、λ／２板を設けた格子の解像限界が
２倍になる理由である。 Considering this improvement in resolution limit in terms of spatial frequency, the fundamental period of the grating amplitude changes from Δ to 2Δ due to the λ/2 plate, the fundamental frequency of the amplitude becomes 1/2, and the numerical aperture of the lens increases. This is because the determined cutoff frequency allows the fundamental frequency, which could not be passed in the past, to pass. This is further explained by the formula (3.24) described on page 61 of "Fourier Imaging Theory" (by Teruji Kose, Kyoritsu Publishing) as a formula for the intensity of images when objects have coherency. be done. That is, the image intensity J 12 (X D ) at this time is Here, X D is the coordinate on the image plane, x 1 is the coordinate on the pupil, θ (x 1 ) is the Fourier component of the amplitude transmittance of the object, and * means complex conjugate. Further, R(x 1 , x 2 ) is called i. In a normal grating without a λ/2 plate, when the fundamental frequency is 0 , the attenuation of R( 0,0 ) has the greatest effect on the gain of the fundamental frequency of the intensity, and the spatial frequency of the intensity due to this is calculated by the above equation. From the phase term of the integrand of x 1 −
x 2 = 0 −0= 0 . On the other hand, in the grating according to the present invention provided with a λ/2 plate, there is no component of x 1 = 0 among the Fourier components θ(x 1 ) of the amplitude transmittance of the object, the fundamental frequency is 1/2, and R( R(γ 0 / 2, γ 0 /2) rather than γ 0 /2,0) has the greatest influence on the gain of the fundamental frequency of the intensity. Then, the spatial frequency of the intensity is x1 - x2 = 0 /2-(- 0/2 )= 0 . Therefore, if there is no λ/2 plate, in order to reproduce the intensity of the 0 frequency, the amplitude of the 0 frequency must pass through, but with the λ/2 plate, In order to reproduce the intensity of the same frequency of 0 , it is sufficient to pass the amplitude of the frequency of 0/2 . This is the reason why the resolution limit of a grating with a λ/2 plate is doubled.
このようにコヒーレント照明において、解像限
界が２倍になる訳であるが、解像限界だけではイ
ンコヒーレント照明の場合と変わりはない。とこ
ろが、インコヒーレント照明ではOTFがカツト
オフ周波数に近づくにつれて減少するのに対し、
コヒーレント照明のOTFはカツトオフ周波数ま
でOTFは１に保たれ得るため、強度の基本周波
数の利得は、λ／２板を設けてコヒーレント照明
を行なう場合の方が、インコヒーレント照明の場
合よりもはるかによく、コントラストが高くな
る。 In this way, in coherent illumination, the resolution limit is doubled, but the resolution limit alone is the same as in the case of incoherent illumination. However, in incoherent illumination, the OTF decreases as it approaches the cutoff frequency;
Since the OTF of coherent illumination can be kept at unity up to the cut-off frequency, the fundamental frequency gain of the intensity is much greater when performing coherent illumination with a λ/2 plate than when using incoherent illumination. Good, high contrast.
以上、一次元格子の場合を述べたが、本発明に
よる被投影原版としては、例えば第４図に示すご
とき二次元的パターンを有するものでもよい。ま
た、位相差は180゜に限るものではない。例え
ば、位相90゜ずれた２つの点光源の像は、インコ
ヒーレントの場合と同じ解像になり、設けるべき
位相差は被投影原版のパターンに応じて適切に選
択することが望ましい。第４図のパターン例で
は、透明部分１１にλ／２板を設け、透明部１３
にλ／４板を設けるならば、３つの透明部１１，
１２，１３が並列する区域では隣接する透明部間
での位相差がそれぞれ90゜になり、透明部１１，
１３が隣接する区域では位相差が180゜となり、
パターンのほぼ全域にわたつて解像を高めること
が可能である。 Although the case of a one-dimensional grid has been described above, the projection original plate according to the present invention may have a two-dimensional pattern as shown in FIG. 4, for example. Further, the phase difference is not limited to 180°. For example, images of two point light sources with a phase difference of 90° have the same resolution as in the case of incoherence, and it is desirable to appropriately select the phase difference to be provided depending on the pattern of the original to be projected. In the pattern example shown in FIG. 4, a λ/2 plate is provided in the transparent portion 11, and the transparent portion 13
If a λ/4 plate is provided, three transparent parts 11,
In the area where 12 and 13 are parallel, the phase difference between adjacent transparent parts is 90°, and the transparent parts 11 and 13 are parallel to each other.
In the area where 13 is adjacent, the phase difference is 180°,
It is possible to increase the resolution over almost the entire area of the pattern.
以上のごとく、本発明による被投影原版を用い
れば、従来と同一の投影レンズで同一の波長を用
いたとしても解像限界を格段に高めることが可能
であり、特にIC製造装置による微細パターンの
焼付け等において、パターンの間隔が解像限界近
くにある場合に本発明は極めて有効である。ま
た、投影装置の機械的な制約により投影レンズ系
を大きくできない場合には、収差補正上の問題か
らレンズ系の開口数を大きくすることが困難であ
るが、本発明のごとく投影原版を構成することに
よつて、投影レンズによる解像限界以上に高い解
像を得ることが可能である。 As described above, by using the projection master according to the present invention, it is possible to significantly increase the resolution limit even if the same wavelength is used with the same projection lens as in the past. The present invention is extremely effective when the pattern spacing is close to the resolution limit in printing or the like. Furthermore, if the projection lens system cannot be enlarged due to mechanical constraints of the projection device, it is difficult to increase the numerical aperture of the lens system due to problems with aberration correction. By doing so, it is possible to obtain a resolution higher than the resolution limit of the projection lens.
尚、本発明は、被投影原版上の焼付されるパタ
ーン面のみならず、アライメントマーク等にも用
いることができ、位置合せの精度をより向上させ
ることができることはいうまでもない。 It goes without saying that the present invention can be used not only for the pattern surface to be printed on the projection original, but also for alignment marks, etc., and can further improve the accuracy of alignment.
第１図は、一般的格子の断面及びこの格子の投
影像の振幅分布の様子を示す。第２図は２つの点
光源がレーレーの解像限界の距離にあるときの３
つの場合(a)、(b)、(c)についての強度分布を示す。
第３図は本発明の一例としての格子原版の透明部
の１つにλ／２板を設けた断面及びこれをコヒー
レント照明によつて投影された像の振幅分布の様
子（実線）と強度分布の様子（破線）を示す。第
４図は二次元的パターンを有する被投影原版の例
を示す。
主要部分の符号の説明、１……透明部分、２…
…不透明部分、３……λ／２板。
FIG. 1 shows a cross section of a typical grating and the amplitude distribution of a projected image of this grating. Figure 2 shows 3 when the two point light sources are at the distance of the Rayleigh resolution limit.
The intensity distributions for three cases (a), (b), and (c) are shown.
Figure 3 shows a cross-section of a λ/2 plate provided on one of the transparent parts of a grating original as an example of the present invention, and the amplitude distribution (solid line) and intensity distribution of an image projected from this by coherent illumination. The situation (dashed line) is shown. FIG. 4 shows an example of a projected original having a two-dimensional pattern. Explanation of symbols of main parts, 1... Transparent part, 2...
...opaque part, 3...λ/2 plate.
Claims (1)
ーンを有し、透過照明によつて投影される被投影
原版において、 前記不透明部をはさむ両側の透明部の少なくと
も一方に位相部材を設け、該両側の透明部に位相
差を生ずる構成としたことを特徴とする透過照明
用被投影原版。[Scope of Claims] 1. In an original plate to be projected which has a predetermined pattern formed of a transparent part and an opaque part and is projected by transmitted illumination, at least one of the transparent parts on both sides sandwiching the opaque part. 1. A projection original plate for transmitted illumination, characterized in that a phase member is provided to create a phase difference between the transparent portions on both sides.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13648380A JPS5762052A (en) | 1980-09-30 | 1980-09-30 | Original plate to be projected for use in transmission |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13648380A JPS5762052A (en) | 1980-09-30 | 1980-09-30 | Original plate to be projected for use in transmission |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5762052A JPS5762052A (en) | 1982-04-14 |
| JPS6250811B2 true JPS6250811B2 (en) | 1987-10-27 |
Family
ID=15176191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13648380A Granted JPS5762052A (en) | 1980-09-30 | 1980-09-30 | Original plate to be projected for use in transmission |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5762052A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0838726A1 (en) | 1996-10-24 | 1998-04-29 | Toppan Printing Co., Ltd. | Halftone phase shift mask, blank for the same, and methods of manufacturing these |
| JP2006179553A (en) * | 2004-12-21 | 2006-07-06 | Toppan Printing Co Ltd | Extreme ultraviolet exposure mask blank, mask, and pattern transfer method |
| DE112009000965T5 (en) | 2008-05-09 | 2011-03-10 | Hoya Corp. | Reflective mask, reflective mask blank, and method of making a reflective mask |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0090924B1 (en) * | 1982-04-05 | 1987-11-11 | International Business Machines Corporation | Method of increasing the image resolution of a transmitting mask and improved masks for performing the method |
| US5235400A (en) * | 1988-10-12 | 1993-08-10 | Hitachi, Ltd. | Method of and apparatus for detecting defect on photomask |
| JP2786693B2 (en) * | 1989-10-02 | 1998-08-13 | 株式会社日立製作所 | Manufacturing method of mask |
| JP2710967B2 (en) | 1988-11-22 | 1998-02-10 | 株式会社日立製作所 | Manufacturing method of integrated circuit device |
| US5290647A (en) * | 1989-12-01 | 1994-03-01 | Mitsubishi Denki Kabushiki Kaisha | Photomask and method of manufacturing a photomask |
| US5298365A (en) | 1990-03-20 | 1994-03-29 | Hitachi, Ltd. | Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process |
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| KR0135729B1 (en) * | 1993-02-12 | 1998-04-24 | Mitsubishi Electric Corp | Attenuating type phase shifting mask and method of manufacturing thereof |
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| JPH07192988A (en) * | 1993-12-27 | 1995-07-28 | Nikon Corp | Illumination optical apparatus |
| JP3368653B2 (en) * | 1994-03-11 | 2003-01-20 | 株式会社ニコン | Illumination method and apparatus, and exposure method and apparatus |
| JPH07281413A (en) * | 1994-04-05 | 1995-10-27 | Mitsubishi Electric Corp | Attenuation type phase shift mask and its production |
| KR960002536A (en) * | 1994-06-29 | 1996-01-26 | ||
| JP3315254B2 (en) * | 1994-07-11 | 2002-08-19 | 三菱電機株式会社 | Exposure method using attenuated phase shift mask |
| JP3080024B2 (en) * | 1997-02-20 | 2000-08-21 | 日本電気株式会社 | Exposure method and method of measuring spherical aberration |
| JP2988417B2 (en) * | 1997-02-28 | 1999-12-13 | 日本電気株式会社 | Photo mask |
| JP2000206671A (en) | 1999-01-13 | 2000-07-28 | Mitsubishi Electric Corp | Photomask, its production and production of semiconductor integrated circuit device |
| JP2003124339A (en) | 2001-10-11 | 2003-04-25 | Toshiba Corp | Semiconductor device and its manufacturing method |
| JP4598575B2 (en) | 2005-03-17 | 2010-12-15 | ルネサスエレクトロニクス株式会社 | Pattern formation method, semiconductor device manufacturing method, phase shift mask, and phase shift mask design method |
| JP2006269853A (en) * | 2005-03-25 | 2006-10-05 | Sony Corp | Exposure apparatus and method of exposure |
-
1980
- 1980-09-30 JP JP13648380A patent/JPS5762052A/en active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0838726A1 (en) | 1996-10-24 | 1998-04-29 | Toppan Printing Co., Ltd. | Halftone phase shift mask, blank for the same, and methods of manufacturing these |
| JP2006179553A (en) * | 2004-12-21 | 2006-07-06 | Toppan Printing Co Ltd | Extreme ultraviolet exposure mask blank, mask, and pattern transfer method |
| JP4622504B2 (en) * | 2004-12-21 | 2011-02-02 | 凸版印刷株式会社 | Mask blank for extreme ultraviolet exposure, mask and pattern transfer method |
| DE112009000965T5 (en) | 2008-05-09 | 2011-03-10 | Hoya Corp. | Reflective mask, reflective mask blank, and method of making a reflective mask |
| US8372564B2 (en) | 2008-05-09 | 2013-02-12 | Hoya Corporation | Reflective mask, reflective mask blank and method of manufacturing reflective mask |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5762052A (en) | 1982-04-14 |
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