JPS6238435B2 - - Google Patents
Info
- Publication number
- JPS6238435B2 JPS6238435B2 JP54161267A JP16126779A JPS6238435B2 JP S6238435 B2 JPS6238435 B2 JP S6238435B2 JP 54161267 A JP54161267 A JP 54161267A JP 16126779 A JP16126779 A JP 16126779A JP S6238435 B2 JPS6238435 B2 JP S6238435B2
- Authority
- JP
- Japan
- Prior art keywords
- gold
- plating
- current density
- liquid
- pure gold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 40
- 239000010931 gold Substances 0.000 claims description 40
- 229910052737 gold Inorganic materials 0.000 claims description 40
- 238000007747 plating Methods 0.000 claims description 38
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 claims description 12
- 229910052921 ammonium sulfate Inorganic materials 0.000 claims description 12
- 235000011130 ammonium sulphate Nutrition 0.000 claims description 12
- 150000002736 metal compounds Chemical class 0.000 claims description 7
- 150000002344 gold compounds Chemical class 0.000 claims description 5
- 229910052684 Cerium Inorganic materials 0.000 claims description 4
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 claims description 4
- 229910019142 PO4 Inorganic materials 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- 239000010452 phosphate Substances 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 4
- 229910052714 tellurium Inorganic materials 0.000 claims description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052716 thallium Inorganic materials 0.000 claims description 4
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 4
- NRTDAKURTMLAFN-UHFFFAOYSA-N potassium;gold(3+);tetracyanide Chemical compound [K+].[Au+3].N#[C-].N#[C-].N#[C-].N#[C-] NRTDAKURTMLAFN-UHFFFAOYSA-N 0.000 claims description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- 229940125782 compound 2 Drugs 0.000 claims 1
- 239000007788 liquid Substances 0.000 description 24
- 239000000243 solution Substances 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 9
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 description 9
- XTFKWYDMKGAZKK-UHFFFAOYSA-N potassium;gold(1+);dicyanide Chemical compound [K+].[Au+].N#[C-].N#[C-] XTFKWYDMKGAZKK-UHFFFAOYSA-N 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000001508 potassium citrate Substances 0.000 description 7
- 229960002635 potassium citrate Drugs 0.000 description 7
- QEEAPRPFLLJWCF-UHFFFAOYSA-K potassium citrate (anhydrous) Chemical compound [K+].[K+].[K+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QEEAPRPFLLJWCF-UHFFFAOYSA-K 0.000 description 7
- 235000011082 potassium citrates Nutrition 0.000 description 7
- 244000248349 Citrus limon Species 0.000 description 6
- 235000005979 Citrus limon Nutrition 0.000 description 6
- 230000005484 gravity Effects 0.000 description 6
- 239000002244 precipitate Substances 0.000 description 6
- 239000000654 additive Substances 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 3
- 229910000402 monopotassium phosphate Inorganic materials 0.000 description 3
- 235000019796 monopotassium phosphate Nutrition 0.000 description 3
- GNSKLFRGEWLPPA-UHFFFAOYSA-M potassium dihydrogen phosphate Chemical compound [K+].OP(O)([O-])=O GNSKLFRGEWLPPA-UHFFFAOYSA-M 0.000 description 3
- 150000003475 thallium Chemical class 0.000 description 3
- YTQVHRVITVLIRD-UHFFFAOYSA-L thallium sulfate Chemical compound [Tl+].[Tl+].[O-]S([O-])(=O)=O YTQVHRVITVLIRD-UHFFFAOYSA-L 0.000 description 3
- 229940119523 thallium sulfate Drugs 0.000 description 3
- 229910000374 thallium(I) sulfate Inorganic materials 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 2
- ZPWVASYFFYYZEW-UHFFFAOYSA-L dipotassium hydrogen phosphate Chemical compound [K+].[K+].OP([O-])([O-])=O ZPWVASYFFYYZEW-UHFFFAOYSA-L 0.000 description 2
- 229910000396 dipotassium phosphate Inorganic materials 0.000 description 2
- 235000019797 dipotassium phosphate Nutrition 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 229910000160 potassium phosphate Inorganic materials 0.000 description 2
- 235000011009 potassium phosphates Nutrition 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 150000000703 Cerium Chemical class 0.000 description 1
- -1 IC frames Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000001621 bismuth Chemical class 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- OZECDDHOAMNMQI-UHFFFAOYSA-H cerium(3+);trisulfate Chemical compound [Ce+3].[Ce+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O OZECDDHOAMNMQI-UHFFFAOYSA-H 0.000 description 1
- 229910000333 cerium(III) sulfate Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- PIJPYDMVFNTHIP-UHFFFAOYSA-L lead sulfate Chemical compound [PbH4+2].[O-]S([O-])(=O)=O PIJPYDMVFNTHIP-UHFFFAOYSA-L 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- PNYYBUOBTVHFDN-UHFFFAOYSA-N sodium bismuthate Chemical compound [Na+].[O-][Bi](=O)=O PNYYBUOBTVHFDN-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Landscapes
- Electroplating And Plating Baths Therefor (AREA)
Description
【発明の詳細な説明】 本発明は純金めつき液に関するものである。[Detailed description of the invention] The present invention relates to a pure gold plating solution.
純金めつき液は半導体関係の種々の製品、例え
ばICフレーム、セラミツクパツケージ、プリン
ト基板、リードフレーム等に広く使用され益々そ
の需要は拡大されつつあり、従来より幾つかの純
金めつき液がこれらの製品を純金めつきするため
に提供されて来ている。しかしながら、従来の純
金めつき液は、殆んどのものが、金量は多く、電
流密度がそれ程上がらず、そして液温が高くて蒸
発量が多いという問題点がある。例えば、特公昭
45―15846号公報に開示される電解浴は金量が１
〜75g／であり、陰極電流密度0.1〜10A／ｄm2
及び温度20〜90℃を操作条件としている。又、特
開昭47−1956号公報の「電解金メツキ溶液及びそ
れを使用する方法」によれば金量は１〜75g／
で、陰極電流密度が好ましくは２〜10A／ft2
（0.216〜1.08A／ｄm2）、温度は100〜180F（37.8
〜82.2℃）を操作条件としている。 Pure gold plating liquid is widely used in various semiconductor-related products such as IC frames, ceramic packages, printed circuit boards, lead frames, etc., and the demand for it is increasing. Products are being offered for plating with pure gold. However, most conventional pure gold plating solutions have problems in that the amount of gold is large, the current density does not increase much, and the solution temperature is high, resulting in a large amount of evaporation. For example, Tokko Akira
The electrolytic bath disclosed in Publication No. 45-15846 has a gold content of 1
~75g/, cathode current density 0.1~10A/ dm2
The operating conditions are a temperature of 20 to 90°C. Furthermore, according to ``Electrolytic gold plating solution and method of using the same'' in Japanese Patent Application Laid-Open No. 1987-1956, the amount of gold is 1 to 75 g/
and the cathode current density is preferably 2 to 10 A/ft 2
(0.216~1.08A/ dm2 ), temperature is 100~180F (37.8
~82.2℃) is the operating condition.
本発明はこれら従来の問題点に着目して開発さ
れた純金めつき液で、金量が少なく、高い陰極電
流密度がとれ、低い液温で使用でき、加えて半導
体関係の製品にとつて最適な特性、即ち密着性、
耐熱性、ボンデイング性及び半田ぬれ性が共に良
好な純金めつき層を析出することのできる純金め
つき液を提供せんとするものである。そして、本
発明は具体的には上記意図の下で、金化合物とし
てシアン化金カリウムを２〜16g／、クエン酸
塩を５〜200g／、リン酸塩を５〜100g／、
硫酸アンモニウムを10〜150g／、タリウム、
セリウム、鉛、アンチモン、ヒ素、ビスマス又は
テルルの内一種の金属化合物を0.01〜40mg／含
有して成る純金めつき液を提供せんとするもので
ある。 The present invention is a pure gold plating solution developed with a focus on these conventional problems.It has a small amount of gold, has a high cathode current density, can be used at low solution temperatures, and is ideal for semiconductor-related products. properties, i.e. adhesion,
It is an object of the present invention to provide a pure gold plating solution capable of depositing a pure gold plating layer having good heat resistance, bonding properties, and solder wettability. Specifically, under the above intention, the present invention specifically provides 2 to 16 g of gold potassium cyanide, 5 to 200 g of citrate, and 5 to 100 g of phosphate as gold compounds.
Ammonium sulfate 10-150g/, thallium,
It is an object of the present invention to provide a pure gold plating solution containing 0.01 to 40 mg of a metal compound selected from among cerium, lead, antimony, arsenic, bismuth, and tellurium.
金化合物はシアン化金カリウムの形で酸性めつ
き液に加えられ、その含有量としては２〜16g／
、好ましくは４〜8g／存在させることがで
きる。このように金化合物の（即ち、金の）含有
量が少ないことは本発明の特色の一つである。 The gold compound is added to the acidic plating solution in the form of potassium gold cyanide, and its content ranges from 2 to 16 g/
, preferably 4 to 8 g/g. This low content of gold compounds (that is, gold) is one of the features of the present invention.
この純金めつき液は液中に導電性で且つ緩衝作
用を有する化合物としてクエン酸塩及びリン酸塩
を含有する。クエン酸塩としてはクエン酸カリウ
ムを５〜200g／、好ましくは120〜150g／含
有させることができ、そしてリン酸塩としてはリ
ン酸カリウムを５〜100g／、好ましくは10〜
50g／含有させることができる。 This pure gold plating solution contains citrate and phosphate as compounds that are conductive and have a buffering effect. As the citrate, potassium citrate can be contained in an amount of 5 to 200 g, preferably 120 to 150 g, and as a phosphate, potassium phosphate can be contained in an amount of 5 to 100 g, preferably 10 to 100 g.
50g/can be contained.
更に本発明に係かる純金めつき液は硫酸アンモ
ニウムを液中に含有せしめ、又添加剤としてタリ
ウム、セリウム、鉛、アンチモン、ヒ素、ビスマ
ス、又はテルルの内１種の金属化合物を含めるも
のである。硫酸アンモニウムは10〜150g／、
好ましくは20〜150g／液中に含有させること
ができ、純金めつき液の安定性に寄与するもので
ある。上記添加剤は金属化合物であり、このよう
な「金属」を添加する純金めつき液にとつて、液
の安定性は陰極電流密度を高く採るために欠かせ
ぬ条件であるが硫酸アンモニウムはこの必要条件
を満足させることができる。このような硫酸アン
モニウムの含有に加えて液中に金属化合物を添加
するところに本発明の特色がある。金属化合物、
即ち添加剤の含有量は微量でよく、0.01〜40mg／
液中に添加するだけでよい。添加剤として液中
に、タリウム、セリウム、鉛、アンチモン、ヒ
素、ビスマス、又はテルルの内１種の金属化合物
を添加することにより析出する純金めつき層は密
着性、耐熱性、ボンデイング性、及び半田ぬれ性
を有することができる。 Further, the pure gold plating solution according to the present invention contains ammonium sulfate in the solution, and also contains one metal compound among thallium, cerium, lead, antimony, arsenic, bismuth, or tellurium as an additive. Ammonium sulfate is 10-150g/,
It can be contained preferably in the range of 20 to 150 g/liquid, contributing to the stability of the pure gold plating solution. The additives mentioned above are metal compounds, and for pure gold plating solutions that add such "metals", stability of the solution is an essential condition for achieving a high cathode current density, and ammonium sulfate does not meet this requirement. conditions can be satisfied. The present invention is characterized by the addition of a metal compound to the liquid in addition to the inclusion of ammonium sulfate. metal compounds,
In other words, the content of additives may be small, 0.01 to 40mg/
Just add it to the liquid. The pure gold plating layer deposited by adding one metal compound among thallium, cerium, lead, antimony, arsenic, bismuth, or tellurium to the liquid as an additive has excellent adhesion, heat resistance, bonding properties, and It can have solder wettability.
本発明の純金めつき液は水素イオン濃度（PH）
４〜７、温度50〜75℃そして陰極電流密度0.1〜
15A／ｄm2の操作条件で用いられる。従来の純金
めつき液では例えば80℃、90℃近辺の高い液温で
液を使用し、ために蒸発量が多いものであつた
が、本発明の純金めつき液は50〜75℃好ましくは
60℃の液温で十分に使用できるので蒸発量を低く
抑えることができる。しかも、従来の液では通常
金が5g／程度ならば陰極電流密度を上げても
1A／ｄm2程度であり、これ以上陰極電流密度を
上げるには金量を多くし、他の液組成にも手を加
え調整しなければならないが本発明の純金めつき
液では上述の如く少ない金量の液でありながら
0.1〜15A／ｄm2で使用できる。例えば浸漬めつ
きの場合には0.1〜1.5A／ｄm2、又高速めつきの
場合は0.1〜15A／ｄm2で液を操作できるもので
ある。 The pure gold plating solution of the present invention has a hydrogen ion concentration (PH)
4-7, temperature 50-75℃ and cathode current density 0.1-
Used at operating conditions of 15A/ dm2 . Conventional pure gold plating solutions use liquids at high liquid temperatures, for example around 80°C or 90°C, resulting in a large amount of evaporation, but the pure gold plating solution of the present invention is preferably used at temperatures of 50 to 75°C.
Since it can be used at a liquid temperature of 60℃, the amount of evaporation can be kept low. Moreover, in conventional liquids, if the gold content is usually around 5 g/g, even if the cathode current density is increased,
It is about 1A/dm2, and to increase the cathode current density further, it is necessary to increase the amount of gold and adjust other liquid compositions, but with the pure gold plating solution of the present invention, the current density is small as described above. Even though it is a liquid with the amount of gold
Can be used at 0.1-15A/ dm2 . For example, in the case of immersion plating, the liquid can be operated at 0.1 to 1.5 A/dm 2 , and in the case of high-speed plating, the liquid can be operated at 0.1 to 15 A/dm 2 .
（実施例 １）
シアン化金カリウム（メタルとして） 5g／
クエン酸１カリウム 20g／
リン酸カリウム 15g／
硫酸アンモニウム 100g／
タリウム塩（硫酸タリウムとして） 20mg／
PH 6.0
比重 11゜B′e
液温 60℃
予め金ストライクめつきを施こした試験片に、
上記の条件で浸漬めつきを行なつたところ、陰極
電流密度を1.5A／ｄm2にでき、半光沢でしかも
レモンイエローの析出物が得られた。そしてこの
純金めつき片は密着性、耐熱性、ボンデイング
性、半田ぬれ性等、半導体部品用に要求される特
性を十分備えていることが判明した。(Example 1) Potassium gold cyanide (as metal) 5g / Potassium citrate 20g / Potassium phosphate 15g / Ammonium sulfate 100g / Thallium salt (as thallium sulfate) 20mg / PH 6.0 Specific gravity 11°B'e Liquid temperature 60°C A test piece that has been plated with gold strike in advance,
When immersion plating was carried out under the above conditions, a cathode current density of 1.5 A/dm 2 was obtained, and a semi-glossy, lemon yellow precipitate was obtained. It has been found that this pure gold plated piece has sufficient properties required for semiconductor parts, such as adhesion, heat resistance, bonding properties, and solderability.
（実施例 ２）
シアン化金カリウム（メタルとして） 5g／
クエン酸カリウム 80g／
リン酸１カリウム 20g／
硫酸アンモニウム 40g／
鉛塩（硫酸鉛として） ５mg／
PH 6.0
比重 11゜Be′
液温 60℃
予め金ストライクめつきを施こした試験片に、
上記の条件で噴射式高速部分めつき装置（特公昭
49−24775号公報に示されるような装置）を利用
して高速めつきをしたところ陰極電流密度を
4A／ｄm2にでき、半光沢でしかもレモンイエロ
ーの析出物が得られた。この純金めつき片は密着
性、耐熱性、ボンデイング性、半田ぬれ性等半導
体部品用として十分な特性を備えていることが確
認できた。(Example 2) Potassium gold cyanide (as metal) 5g / Potassium citrate 80g / Monopotassium phosphate 20g / Ammonium sulfate 40g / Lead salt (as lead sulfate) 5mg / PH 6.0 Specific gravity 11°Be′ Liquid temperature 60℃ in advance A test piece with gold strike plating,
Under the above conditions, the injection type high-speed partial plating equipment
When high-speed plating was performed using a device such as that shown in Publication No. 49-24775, the cathode current density was
4 A/dm 2 , and a semi-glossy, lemon yellow precipitate was obtained. It was confirmed that this pure gold-plated piece had sufficient properties for use in semiconductor parts, such as adhesion, heat resistance, bonding properties, and solderability.
（実施例 ３）
シアン化金カリウム（メタルとして） 4g／
クエン酸カリウム 50g／
リン酸２カリウム 25g／
硫酸アンモニウム 130g／
セリウム塩（硫酸第一セリウムとして）
0.4mg／
PH 6.0
比重 11゜B′e
液温 60℃
予め金ストライクめつきを施こした試験片に、
上記の条件で実施例２と同様の装置を利用し高速
めつきをしたところ、陰極電流密度を5A／ｄm2
にでき、半光沢で且つレモンイエローの析出物が
得られた。この純金めつき片は密着性、耐熱性、
ボンデイング性、半田ぬれ性等の半導体部品用と
して必要な特性を十分備えていることが判明し
た。(Example 3) Potassium gold cyanide (as metal) 4g / potassium citrate 50g / dipotassium phosphate 25g / ammonium sulfate 130g / cerium salt (as cerous sulfate)
0.4mg/ PH 6.0 Specific gravity 11゜B'e Liquid temperature 60℃ A test piece with gold strike plating applied in advance,
When high-speed plating was performed using the same equipment as in Example 2 under the above conditions, the cathode current density was 5 A/dm 2
A semi-glossy, lemon yellow precipitate was obtained. This pure gold plated piece has excellent adhesion, heat resistance,
It was found that it has sufficient properties necessary for semiconductor parts, such as bonding properties and solderability.
（実施例 ４）
シアン化金カリウム（メタルとして） 3g／
クエン酸カリウム 100g／
リン酸１カリウム 40g／
硫酸アンモニウム 20g／
ビスマス塩（ビスマス酸ナトリウムとして）
0.5mg／
PH 6.0
比重 11゜B′e
液温 50℃
予め金ストライクめつきを施こした試験片に、
上記の条件で実施例２と同様の装置を利用し高速
めつきをしたところ、陰極電流密度を3A／ｄm2
にでき半光沢で且つレモンイエローの析出物が得
られた。この純金めつき試験片は密着性、耐熱
性、ボンデイング性、半田ぬれ性等の半導体部品
用として要求される特性を十分満足させるもので
あつた。(Example 4) Potassium gold cyanide (as metal) 3g / potassium citrate 100g / monopotassium phosphate 40g / ammonium sulfate 20g / bismuth salt (as sodium bismuthate)
0.5mg/ PH 6.0 Specific gravity 11゜B'e Liquid temperature 50℃ A test piece with gold strike plating applied in advance,
When high-speed plating was performed using the same equipment as in Example 2 under the above conditions, the cathode current density was 3A/dm 2
A semi-glossy and lemon yellow precipitate was obtained. This pure gold-plated test piece sufficiently satisfied the properties required for semiconductor parts, such as adhesion, heat resistance, bonding properties, and solderability.
（実施例 ５）
シアン化金カリウム（メタルとして） 4g／
クエン酸カリウム 40g／
リン酸２カリウム 25g／
硫酸アンモニウム 60g／
タリウム塩（硫酸タリウムとして） 0.04mg／
PH 6.0
比重 11゜B′e
液温 60℃
予め金ストライクめつきを施こした試験片に、
上記の条件で、実施例２と同様の装置を用い高速
めつきしたところ、陰極電流密度を4A／ｄm2に
でき、半光沢でしかもレモンイエローの析出物が
得られた。この純金めつき試験片は密着性、耐熱
性、ボンデイング性、半田ぬれ性等半導体部品用
として条件を十分に満たすものであつた。(Example 5) Potassium gold cyanide (as metal) 4g / Potassium citrate 40g / Dipotassium phosphate 25g / Ammonium sulfate 60g / Thallium salt (as thallium sulfate) 0.04mg / PH 6.0 Specific gravity 11゜B′e Liquid temperature 60 ℃ A test piece with gold strike plating applied in advance,
When high-speed plating was carried out under the above conditions using the same equipment as in Example 2, the cathode current density was 4 A/dm 2 and a semi-glossy, lemon yellow precipitate was obtained. This pure gold-plated test piece fully satisfied the requirements for use in semiconductor parts, such as adhesion, heat resistance, bonding properties, and solderability.
（実施例 ６）
シアン化金カリウム（メタルとして） 16g／
クエン酸カリウム 40g／
リン酸１カリウム 25g／
硫酸アンモニウム 80g／
タリウム塩（硫酸タリウムとして） 20mg／
PH 6.0
比重 13゜B′e
液温 75℃
予め金ストライクめつきを施こした試験片に、
上記条件で、実施例２と同様の装置を用い高速め
つきをしたところ、陰極電流密度を15A／ｄm2に
でき、半光沢でつきまわりの良いしかもレモンイ
エローの析出物が得られた。この純金めつき片は
密着性、耐熱性、ボンデイング性、半田ぬれ性等
半導体部品用としての条件を十分満たすものであ
つた。(Example 6) Potassium gold cyanide (as metal) 16g / potassium citrate 40g / monopotassium phosphate 25g / ammonium sulfate 80g / thallium salt (as thallium sulfate) 20mg / PH 6.0 Specific gravity 13°B′e Liquid temperature 75°C A test piece that has been plated with gold strike in advance,
When high-speed plating was carried out under the above conditions using the same apparatus as in Example 2, a cathode current density of 15 A/dm 2 was obtained, and a lemon yellow precipitate with semi-gloss and good throwing power was obtained. This pure gold-plated piece sufficiently satisfied the requirements for semiconductor parts, such as adhesion, heat resistance, bonding properties, and solderability.
以上、説明したように本発明に係かる純金めつ
き液は金化合物として２〜16g／のシアン化金
カリウムを含有させればよく、従来の１〜75g／
程度の多くの金量を必要とする純金めつき液に
比べ非常に金含有量が少ないのでめつき槽からの
「くみ出し量」が少量であり、又50〜70℃という
低い液温で操作可能なので液の蒸発量も極めて少
なく非常に経済的で且つ使用し易いものであつ
て、しかも陰極電流密度を0.1〜15A／ｄm2と高
くとることができ15A／ｄm2までめつき焼けも無
く外観が良好であり、その析出純金層は密着性、
耐熱性、ボンデイング性そして半田ぬれ性という
半導体部品にとり必要不可欠の特性を備えるか
ら、この種の製品に対する汎用性も高く、加えて
液が安定していて高い陰極電流密度をとることが
できるので高速噴射めつき用の液として最適であ
るという多くの秀れた効果がある。 As explained above, the pure gold plating solution according to the present invention only needs to contain 2 to 16 g of potassium gold cyanide as a gold compound, compared to the conventional 1 to 75 g of potassium cyanide.
Compared to pure gold plating liquid, which requires a relatively large amount of gold, the gold content is very small, so the amount of "pumping out" from the plating tank is small, and it can be operated at a low liquid temperature of 50 to 70 degrees Celsius. Therefore, the amount of liquid evaporation is extremely low, making it extremely economical and easy to use.Moreover, the cathode current density can be set as high as 0.1 to 15 A/ dm2 , and the appearance is maintained without any plating burns up to 15 A/ dm2 . The deposited pure gold layer has good adhesion and
It has heat resistance, bonding properties, and solderability, which are essential characteristics for semiconductor parts, so it is highly versatile for this type of product, and in addition, the liquid is stable and high cathode current density can be obtained, so it can be used at high speeds. It has many excellent effects, making it ideal as a spray plating liquid.
Claims (1)
16g／、クエン酸塩を５〜200g／、リン酸塩
を５〜100g／、硫酸アンモニウムを10〜
150g／、タリウム、セリウム、鉛、アンチモ
ン、ヒ素、ビスマス又はテルルの内一種の金属化
合物を0.01〜40mg／含有して成る純金めつき
液。1 Gold potassium cyanide as a gold compound 2 ~
16g/, citrate 5~200g/, phosphate 5~100g/, ammonium sulfate 10~
A pure gold plating solution containing 150g/0.01 to 40mg/of a metal compound selected from thallium, cerium, lead, antimony, arsenic, bismuth, or tellurium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16126779A JPS5684495A (en) | 1979-12-12 | 1979-12-12 | Pure gold plating liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16126779A JPS5684495A (en) | 1979-12-12 | 1979-12-12 | Pure gold plating liquid |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5684495A JPS5684495A (en) | 1981-07-09 |
| JPS6238435B2 true JPS6238435B2 (en) | 1987-08-18 |
Family
ID=15731849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16126779A Granted JPS5684495A (en) | 1979-12-12 | 1979-12-12 | Pure gold plating liquid |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5684495A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4435253A (en) * | 1983-01-28 | 1984-03-06 | Omi International Corporation | Gold sulphite electroplating solutions and methods |
| CN101906649B (en) * | 2010-08-11 | 2011-09-21 | 哈尔滨工业大学 | Cyanogens-free gold plating solution and method for plating gold by adopting same |
| JP6393526B2 (en) * | 2014-06-11 | 2018-09-19 | メタローテクノロジーズジャパン株式会社 | Cyan-based electrolytic gold plating bath and bump forming method using the same |
| US20160145756A1 (en) * | 2014-11-21 | 2016-05-26 | Rohm And Haas Electronic Materials Llc | Environmentally friendly gold electroplating compositions and methods |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4923976A (en) * | 1972-07-03 | 1974-03-02 | ||
| JPS5212884A (en) * | 1975-07-21 | 1977-01-31 | Kawasaki Heavy Ind Ltd | Cylindrical abrasion tester for cylinders |
-
1979
- 1979-12-12 JP JP16126779A patent/JPS5684495A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4923976A (en) * | 1972-07-03 | 1974-03-02 | ||
| JPS5212884A (en) * | 1975-07-21 | 1977-01-31 | Kawasaki Heavy Ind Ltd | Cylindrical abrasion tester for cylinders |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5684495A (en) | 1981-07-09 |
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