JPS6237535B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to semiconductor devices, and in particular to
The present invention relates to a semiconductor device having a -n junction and a storage capacitor section made of an insulating material.

In conventional integrated circuits formed on the surface of semiconductors, the individual transistors that form them are
Regardless of whether it is a MOS (Unipolar) Tr or a Bipolar Tr, the potential appearing within the integrated circuit takes a value between two commonly used power supply voltage values. However, depending on the circuit configuration of the integrated circuit,
A voltage higher or lower than the current power supply voltage may be required. For this reason, special methods have been devised to generate such high or low voltages within the integrated circuit under the above two types of supply voltages. For example, when an integrated circuit requires a potential greater in absolute value than the power supply voltage value, regardless of whether the power supply voltage used is positive or negative, a bootstrap circuit is specially constructed within the integrated circuit. In another example, a charge pump (Reference:
IE ³ VOL ED−16, NO 3 Charge Pumping
In Devices, the operating principle of this charge pump is described.) A circuit configuration called ``In Devices'' has been proposed and commercialized.

The present invention is based on the same idea as shown in the above two examples, and provides a semiconductor device which obtains a potential in an integrated circuit formed on the surface of a semiconductor substrate, the polarity of which is opposite to the power supply voltage used in the circuit. This is what we intend to provide. That is, a potential with a negative polarity is generated with good reproducibility in an integrated circuit whose power supply voltages are at least a voltage with a positive polarity and a ground voltage. Or at least, it is an object of the present invention to provide a semiconductor device that generates a potential with positive polarity with good reproducibility in an integrated circuit whose power supply voltages are a voltage with negative polarity and a ground voltage.

A feature of the present invention is that at least two regions having a conductivity type different from that of the semiconductor substrate are formed on the surface of the semiconductor substrate, and one of the regions is used as one pole of a pair of electrodes of the capacitor. , forming the electrode of the other capacitor portion facing each other with an insulating material in between, and the remaining region having a conductivity type different from the conductivity type of the base described above serves as one electrode of the diode. The structure is such that it is connected to an electrode.

Next, the present invention will be explained in detail with reference to Examples. In the following, only the case of a semiconductor substrate whose conductivity type is P type will be described, but it should be mentioned in advance that the same applies to the case of a semiconductor substrate whose conductivity type is N type. However, in this case, the conductivity types of the semiconductors are all opposite to those in this embodiment.

As shown in FIG. 1, a semiconductor substrate 101 whose conductivity type is P type.
An insulating material 102 having a relatively thick film thickness on the surface of
, and regions 103 and 10 of N type conductivity are formed on the surface portion of the semiconductor substrate where the insulating material is not formed.
form 4. Next, one region 103 of such N-type regions is provided with an insulating material 105 (for example, a silicon dioxide film, a silicon nitride film) of a storage capacitor portion, which becomes one of the pair of electrodes, and the other region 103 of the storage capacitor portion is The electrode 106 is formed. Here, the single electrode 106 of the power storage unit is made of a metal such as aluminum, a semiconductor material containing a high concentration effective impurity (P-type impurity in this embodiment), or a metal such as aluminum and a high concentration effective impurity. It consists of an electrode connected to a semiconductor material containing . One side electrode 106 of such a storage capacitor has a region 10 whose conductivity type is P type.
7 and is connected to Ohmic. Here, the P-type region 107 is configured in a region 104 different from the width 103 of the N-type conductivity region described above, and the regions 107, 1
04 forms a diode having a semiconductor P-n junction 111. Next, the N-type conductive region 10 mentioned above
The electrode 108 is attached to the third part, and the electrode 108 is attached to one side of the storage capacitor part.
In step 06, the extraction electrode 109 and the electrode 110 of the other N-type conductive region 104 described above are formed. The semiconductor device according to the present invention is thus constructed.

Next, FIG. 2 shows a schematic diagram of an equivalent circuit of the semiconductor device of the present invention. Among these, circuit a is a case where the semiconductor substrate (101 in FIG. 1) has P-type conductivity, and circuit b is a case where the same substrate has N-type conductivity. Further, FIG. 3 shows input pulses and output pulses in the present invention. The operating method and principle of the present invention will be explained with reference to FIGS. 2, 3, and 1. Here, 201 (20
1'), 202 (202'), and 203 (203') correspond to 108, 109, and 110 in FIG. 1, respectively. Figure 2 201 (Figure 1 108)
A rectangular pulse as shown in FIG. 3A is given to At the initial stage of operation of the semiconductor device of the present invention, the terminal 203 is grounded, and when the potential of the terminal 201 is initially at the ground potential, the potential of the terminal 202 becomes lower than the ground potential by the internally generated potential difference of the P-n junction. Next, terminal 201
When the potential of the terminal 202 increases positively, capacitive coupling occurs through the capacitors 204 and 204', and the potential of the terminal 202 tends to increase positively. However, the diodes 205, 205' are now biased in the forward direction, and an increase in the potential of the terminal 202 due to capacitive coupling is prevented. That is, when electrons are injected into the terminal 202 portion from the ground terminal 203, an equivalent phenomenon occurs. Next, when the potential of the rectangular pulse applied to the terminal 201 again becomes the ground potential, the capacitance 201
4, the potential at terminal 202 drops. The voltage at this time is expressed by equation (1).

V=-(|Vin|+Vo)...Equation (1) Here, Vin is the contact potential of the p-n junction, and Vo
indicates the higher potential of the rectangular pulse applied to terminal 201. In other words, the third terminal is connected to the 201 terminal in Figure 2.
When a rectangular pulse between the ground potential and positive potential as shown in Figure A is input, the terminal 202 in Figure 2 receives a rectangular pulse as shown in Figure 3B, that is, the ground potential, and the equation (1) V = - ( | Vin | A rectangular pulse with a potential of +Vo) is generated. As described above with respect to FIG. 2 a, in case b, the terminal 203' is grounded and the
When a ground potential and a rectangular pulse with a negative polarity potential are applied to 01', the capacitance 204' increases, contrary to the case of a.
A rectangular pulse of the +|Vin| potential and the {|Vin|+|Vo|)} potential is generated at the terminal 202' due to the capacitive coupling caused by. As described above, the present invention generates signal pulses with a polarity opposite to the power supply voltage with good reproducibility using capacitive coupling while providing irreversibility in the current direction using a semiconductor p-n junction. Such reverse polarity signal pulses can be effectively used, for example, to operate depletion type MOS field effect transistors in integrated circuits.

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing one embodiment of the present invention. FIG. 2 is a schematic diagram of an equivalent circuit of a semiconductor device according to the present invention. FIG. 3A is a diagram showing the actuation input pulse of the present invention, and FIG. 3B is a diagram showing its output pulse. In the figure, 101...semiconductor substrate, 10
2... Thick insulating material, 103... Semiconductor substrate 10
Semiconductor region 1, 104 of a conductivity type different from 1...Semiconductor region 2, 1 of a conductivity type different from that of the semiconductor substrate 101
05... Insulating material for storage capacity, 106... 1 electrode of electricity storage capacitor, 107... 1 electrode of p-n junction diode, 108... 1 extraction electrode of electricity storage capacitor, 109... 1 electrode of electricity storage capacitor Take-out electrode, 1
10... p-n junction diode 1 extraction electrode,
111...p-n junction, 201, 201'...electrode of the storage capacitor section corresponding to 108 in FIG. 1, 20
2,202'...Electrode of the storage capacitor section corresponding to 109 in Fig. 1, 203,203'...1 in Fig. 1
p-n junction diode electrode corresponding to 10, 20
4,204'...Electricity storage capacity section, 205,205'...
...It is a semiconductor p-n junction diode.

Claims (1)

[Claims] 1. At least two regions of opposite conductivity type are provided on one main surface of a semiconductor substrate of one conductivity type, a region of one conductivity type is provided in one of the regions of opposite conductivity type, and the other region of opposite conductivity type is used as a first electrode. A semiconductor device characterized in that a storage capacitor section is formed by connecting a second electrode to the one conductivity type region, and a signal pulse having a polarity opposite to a signal pulse applied to the first electrode is extracted from the second electrode. .