JPS6235236B2 - - Google Patents
Info
- Publication number
- JPS6235236B2 JPS6235236B2 JP57082908A JP8290882A JPS6235236B2 JP S6235236 B2 JPS6235236 B2 JP S6235236B2 JP 57082908 A JP57082908 A JP 57082908A JP 8290882 A JP8290882 A JP 8290882A JP S6235236 B2 JPS6235236 B2 JP S6235236B2
- Authority
- JP
- Japan
- Prior art keywords
- display element
- film
- phosphor
- phosphor layer
- display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 22
- 230000001681 protective effect Effects 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 7
- 239000011888 foil Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 2
- 238000004080 punching Methods 0.000 claims description 2
- 238000009751 slip forming Methods 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000005401 electroluminescence Methods 0.000 description 58
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- UUAGAQFQZIEFAH-UHFFFAOYSA-N chlorotrifluoroethylene Chemical group FC(F)=C(F)Cl UUAGAQFQZIEFAH-UHFFFAOYSA-N 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 5
- 239000004698 Polyethylene Substances 0.000 description 4
- 239000005083 Zinc sulfide Substances 0.000 description 4
- 229920002678 cellulose Polymers 0.000 description 4
- 239000001913 cellulose Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- -1 polyethylene Polymers 0.000 description 4
- 229920000573 polyethylene Polymers 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000003566 sealing material Substances 0.000 description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- CHDVXKLFZBWKEN-UHFFFAOYSA-N C=C.F.F.F.Cl Chemical compound C=C.F.F.F.Cl CHDVXKLFZBWKEN-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000012190 activator Substances 0.000 description 2
- 238000002788 crimping Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- FPBWSPZHCJXUBL-UHFFFAOYSA-N 1-chloro-1-fluoroethene Chemical group FC(Cl)=C FPBWSPZHCJXUBL-UHFFFAOYSA-N 0.000 description 1
- ZQXCQTAELHSNAT-UHFFFAOYSA-N 1-chloro-3-nitro-5-(trifluoromethyl)benzene Chemical class [O-][N+](=O)C1=CC(Cl)=CC(C(F)(F)F)=C1 ZQXCQTAELHSNAT-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Description
【発明の詳細な説明】
本発明は、一対の電極間に螢光体層を挾持し、
両電極間に直流電圧を印加して螢光体を発光させ
るエレクトロルミネツセンス表示素子(以下EL
表示素子という)の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention comprises sandwiching a phosphor layer between a pair of electrodes,
An electroluminescent display element (hereinafter referred to as EL) that emits light by applying a DC voltage between both electrodes.
(referred to as a display element).
硫化亜鉛(ZnS)等を基体として活性剤や付活
性剤の不純物を注入した螢光体に電圧を印加すれ
ば発光する現象はエレクトロルミネツセンス
(EL)として周知であり、この現象を利用した
EL発光素子が開発されている。EL発光素子は消
費電力量や発熱量が少なく、また非常に薄く作成
できるので近年省エネルギー光源として注目され
ている。又、電子機器の急速なデジタル化が進み
表示形態が多様化している中でEL発光素子も表
示用として実用化が試みられている。ところが、
EL発光素子は、内部に水分が存在すれば、硫化
亜鉛等の螢光体の分解が進み輝度劣化が非常に激
しくなり、EL表示素子として使用に耐えられな
くなる。このためEL表示素子製造にあたつて
は、素子内部に水分が存在しないように十分注意
しなければならない。 The phenomenon of emitting light when voltage is applied to a phosphor made of zinc sulfide (ZnS) or other material injected with activator or activator impurities is well known as electroluminescence (EL), and this phenomenon can be used to
EL light emitting devices have been developed. EL light-emitting elements have attracted attention in recent years as an energy-saving light source because they consume less power and generate less heat, and can be made very thin. Furthermore, with the rapid digitalization of electronic devices and the diversification of display formats, attempts have been made to put EL light-emitting elements into practical use for display purposes. However,
If moisture is present inside an EL light-emitting element, the decomposition of the phosphor such as zinc sulfide will progress and the brightness will deteriorate significantly, making it unusable as an EL display element. Therefore, when manufacturing EL display elements, sufficient care must be taken to ensure that no moisture is present inside the element.
第1図は、一般的なEL表示素子の構成を示
し、1は三フツ化塩化エチレン等からなる有機透
明絶縁フイルム、2は、メツシユ状に形成した金
やアルミニウム又はITO(InとSnの酸化物)等を
透明絶縁フイルム上に蒸着して形成したEL光の
透過可能な透明電極で、3は硫化亜鉛やセレン化
亜鉛などに銅、マンガン、アルミニウム、塩素臭
素等の活性剤や付活性剤を注入した螢光体粉末
を、シアノエチル化セルロースやフツソ樹脂等の
有機質バインダー中に分散させてなる螢光体層、
4はアルミニユウムや金の箔又は板を用い対向電
極、5はフツ化塩化エチレンフイルム単体か又は
三フツ化塩化エチレンフイルムとポリエチレンフ
イルムとをラミネート接着した防湿用保護フイル
ムである。叙上の構成のEL表示素子の透明電極
2と対向電極4間に直流電圧を印加すると螢光体
層3が発光し表示が行われる。 Figure 1 shows the structure of a general EL display element. 1 is an organic transparent insulating film made of ethylene trifluoride chloride, etc.; 2 is an oxidized film of gold, aluminum or ITO (In and Sn) formed into a mesh shape; 3 is a transparent electrode that allows EL light to pass through, and is formed by vapor-depositing a substance such as a substance) on a transparent insulating film, and 3 is a transparent electrode that can transmit EL light. A phosphor layer made by dispersing phosphor powder injected with phosphor powder in an organic binder such as cyanoethylated cellulose or fluorine resin,
4 is a counter electrode made of aluminum or gold foil or plate, and 5 is a moisture-proof protective film made of a fluorochloroethylene film alone or a laminate of a trifluorochloride ethylene film and a polyethylene film. When a DC voltage is applied between the transparent electrode 2 and the counter electrode 4 of the EL display element having the above configuration, the phosphor layer 3 emits light and a display is performed.
次に従来のEL表示素子の製造方法を説明す
る。まず、アルミニウム等の金属箔又は金属板か
らなる対向電極4上に、シアノエチル化セルロー
スと螢光体粉末とを混合した螢光体層形成用ペー
ストを塗布乾燥して螢光体層3を形成する。さら
に透明絶縁フイルム1上に形成された透明電極2
を前記螢光体層3上に載置して加熱加圧して接着
し、EL表示素子基体を製造する。 Next, a method of manufacturing a conventional EL display element will be explained. First, a phosphor layer forming paste containing a mixture of cyanoethylated cellulose and phosphor powder is applied onto the counter electrode 4 made of metal foil or metal plate such as aluminum and dried to form the phosphor layer 3. . Further, a transparent electrode 2 formed on the transparent insulating film 1
is placed on the phosphor layer 3 and bonded under heat and pressure to produce an EL display element substrate.
さらに、EL表示素子基体を、三フツ化塩化エ
チレンフイルム単体か又は三フツ化塩化エチレン
フイルムとポリエチレンフイルムとをラミネート
接着した防湿用保護フイルムでサンドウイツチ状
に挾み込み加熱ロール間を通過させ接着封止して
EL表示素子を作製していた。 Furthermore, the EL display element substrate is sandwiched between a moisture-proof protective film made of a single trifluorochloroethylene film or a laminate of a trifluorochloroethylene film and a polyethylene film, and then passed between heating rolls and adhesively sealed. stop
They were making EL display elements.
第2図A,Bは、叙上の従来の方法で作製した
EL表示素子を示したもので、それぞれ正面図及
び断側面図である。従来の製法で作製したEL表
示素子は、第2図Aに示した如く、防湿効果を上
げるため保護フイルム5の周辺(非表示部)を、
EL表示素子基板より3〜5mm大きく作製しなけ
ればならなかつた。又、第2図Bに示した如く、
EL表示素子基体6を保護フイルム5で接着封止
する際、EL表示素子基体6の端部付近に空隙7
が生じ易く該空隙7に水分を含み易く、完成した
EL表示素子の信頼性を低下させていた。 Figure 2 A and B were produced using the conventional method described above.
These are a front view and a cross-sectional side view, respectively, showing an EL display element. As shown in FIG. 2A, in the EL display element manufactured by the conventional manufacturing method, the periphery (non-display area) of the protective film 5 is
It had to be made 3 to 5 mm larger than the EL display element substrate. Also, as shown in Figure 2B,
When adhesively sealing the EL display element substrate 6 with the protective film 5, a void 7 is created near the end of the EL display element substrate 6.
is likely to occur and moisture is likely to be contained in the void 7, and the completed
This reduced the reliability of EL display elements.
第3図は従来方法で作製した表示部の中間部が
開孔しているEL表示素子を示したもので、8は
開孔部である。この種EL表示素子の従来の作製
方法は次のとおりである。まず開孔部にあるEL
表示素子基体を作成し、該EL表示素子基体を保
護フイルムでサンドウイツチ状に挾み込み加熱ロ
ール間を通過させ接着封止する。次に外周部及び
開孔部の保護フイルム5のうち余分な部分を切断
してEL表示素子を完成する。 FIG. 3 shows an EL display element manufactured by a conventional method in which the middle part of the display part has an opening, and numeral 8 indicates the opening. A conventional method for manufacturing this type of EL display element is as follows. First, the EL in the opening
A display element substrate is prepared, and the EL display element substrate is sandwiched between protective films and passed between heated rolls to be adhesively sealed. Next, excess portions of the protective film 5 on the outer periphery and the opening are cut off to complete the EL display element.
従来法で作製したこの種EL表示素子は、第3
図に示したように、外周部と開口部8周辺(非表
示部)は防湿のため保護フイルムがEL表示素子
基体6よりも3〜5mm大きく、それだけ形状に制
限があり、小型化には限界があつた。又、従来方
法はEL表示素子基体を防湿封止前に切断したり
開孔部を設けたりして複雑な形状とするため連続
製造して大量生産するには不向きであつた。 This type of EL display element manufactured using the conventional method is
As shown in the figure, the protective film on the outer periphery and around the opening 8 (non-display area) is 3 to 5 mm larger than the EL display element base 6 to prevent moisture, which limits the shape and limits miniaturization. It was hot. In addition, the conventional method is not suitable for continuous manufacturing and mass production because the EL display element substrate is cut or apertures are formed before moisture-proof sealing to form a complicated shape.
本発明は、叙上の欠点を解消するためなされた
もので、所定形状の透明電極を連続して表面に形
成した透明絶縁フイルム上に螢光体形成用ペース
トを塗布・乾燥して螢光体層を連続形成し螢光体
フイルムを作製する工程と、前記螢光体フイルム
の螢光体層上に金属箔を圧着して連続した発光フ
イルムを作製する工程と、前記発光体フイルム
を、2枚の保護フイルムで上下より挟み込み加熱
圧着封止して連続したEL表示素子基体フイルム
を作製する工程と、前記EL表示素子基体フイル
ムを任意の形状に打ち抜き切断してEL表示素子
基体を作製する工程と、前記EL表示素子基体の
切断部周辺を封止する工程とよりなることを特徴
とするEL表示素子の製造方法を提供するもので
ある。 The present invention has been made to solve the above-mentioned drawbacks, and a phosphor-forming paste is applied and dried on a transparent insulating film on which transparent electrodes of a predetermined shape are continuously formed on the surface. a step of continuously forming a phosphor film to produce a phosphor film; a step of press-bonding a metal foil onto the phosphor layer of the phosphor film to produce a continuous phosphor film; A process of sandwiching two protective films from above and below and sealing by heat-pressing to produce a continuous EL display element base film, and a process of punching and cutting the EL display element base film into an arbitrary shape to produce an EL display element base film. and a step of sealing the periphery of the cut portion of the EL display element substrate.
以後実施例に従つて本発明を更に詳しく説明す
る。 Hereinafter, the present invention will be explained in more detail with reference to Examples.
実施例 1
厚さ0.1mmのポリエステルシートから成る透明
絶縁フイルム上に、スパツタリング法や蒸着法に
より酸化インジユームと酸化錫とからなる透明電
極を形成する。次に、シアノエチル化セルロース
と、アセトン、メチルエチルケトン、アセト酢酸
エチル等の溶媒とを、重量比が1:1〜10となる
様に混合しビヒクルを作製し、硫化亜鉛中に銅や
アルミニウムを注入した螢光体粉末をシアノエチ
ル化セルロースとの重量比が1:1〜10になる様
にビヒクル中に混合して螢光体ペーストを作製す
る。該螢光体ペーストを前記透明電極上に、乾燥
後膜厚が10〜50μmとなるようにロールコーター
法、印刷法又はスプレー法により連続的に塗布乾
燥し螢光体層を形成し、螢光体フイルムを作製す
る。前記螢光体フイルムと厚さ10〜50μmのアル
ミ箔からなる対向電極とを重ね合せ80〜170℃に
加熱しながら10〜80Kg/cm2の圧力でロールを通過
させ圧着させ、発光フイルムを作成する。なお圧
着する場合のロールには、対向電極の背面に厚さ
3〜10mmのシリコンゴムを使用し、螢光体層の表
面凹凸による圧着時のひずみ等の幣害を防止する
ことが望ましい。次に、発光フイルムより巾が広
く、三フツ化塩化エチレンとポリエチレンがラミ
ネート接着された2枚のフープ状防湿保護フイル
ムのポリエチレン側を対向させ、間に発光フイル
ムを挾み込み90〜150℃に加熱したロールを通過
させ圧着封止を行つて、連続したフープ状EL表
示素子基体フイルムを作製する。さらに該フープ
状EL表示素子基体フイルムを所定形状に、プレ
ス等により打ち抜き個々に切断してEL表示素子
基体を作製する。Example 1 A transparent electrode made of indium oxide and tin oxide is formed on a transparent insulating film made of a polyester sheet with a thickness of 0.1 mm by sputtering or vapor deposition. Next, a vehicle was prepared by mixing cyanoethylated cellulose and a solvent such as acetone, methyl ethyl ketone, or ethyl acetoacetate at a weight ratio of 1:1 to 10, and copper and aluminum were injected into the zinc sulfide. A phosphor paste is prepared by mixing phosphor powder and cyanoethylated cellulose in a vehicle at a weight ratio of 1:1 to 10. The phosphor paste is continuously coated and dried on the transparent electrode using a roll coater method, a printing method, or a spray method so that the film thickness after drying is 10 to 50 μm to form a phosphor layer. Create a body film. The fluorescent film and a counter electrode made of aluminum foil with a thickness of 10 to 50 μm are stacked together, heated to 80 to 170°C, and pressed together by passing through a roll at a pressure of 10 to 80 kg/cm 2 to create a luminescent film. do. It is preferable to use silicone rubber with a thickness of 3 to 10 mm on the back surface of the counter electrode for the roll used for crimping to prevent damage such as distortion during crimping due to surface irregularities of the phosphor layer. Next, the polyethylene sides of two hoop-shaped moisture-proof protective films that are wider than the luminescent film and laminated with trifluorochloroethylene and polyethylene are bonded together, and the luminescent film is sandwiched between them and heated to 90 to 150°C. A continuous hoop-shaped EL display element substrate film is produced by passing through a heated roll and sealing by pressure. Further, the hoop-shaped EL display element substrate film is punched out into a predetermined shape using a press or the like and cut into individual pieces to produce an EL display element substrate.
最後に、該EL表示素子基体を250〜350℃に加
熱したホツトメルトガンから溶融された液状の三
フツ化塩化エチレンを切断部周辺に塗布後冷却
し、EL発行素子を完成する。 Finally, the EL display element substrate is heated to 250 to 350° C. with a hot melt gun, and liquid chlorinated trifluoride is applied to the periphery of the cut portion, followed by cooling to complete the EL display element.
第4図A,Bは、それぞれこのようにして作製
したEL表示素子の正面図及び断側面図であり、
同図Aに示すとおりEL表示素子基体6周辺部及
び開口部8周辺部(非表示部)も極めて小さくて
すみ、又同図Bに示した如く、EL表示素子基体
6端部付近にも、空隙は発生しない。従つて、小
型化が可能で信号性の高いEL表示素子が作製で
きる。又、絶縁フイルム上にペーストを塗布・乾
燥して螢光体層を形成するので、あらかじめシー
ト状の螢光体層を成形加工しておく必要がなく、
螢光体層の形成に際し、形成された螢光体層に亀
裂が発生しないため、高品質のEL表示素子を歩
留り良く製造できる。 4A and 4B are a front view and a cross-sectional side view, respectively, of the EL display element produced in this way,
As shown in Figure A, the peripheral area of the EL display element substrate 6 and the peripheral area of the opening 8 (non-display area) are also extremely small, and as shown in Figure B, the area near the end of the EL display element substrate 6 is also small. No voids occur. Therefore, an EL display element that can be miniaturized and has high signal quality can be manufactured. In addition, since the phosphor layer is formed by applying and drying the paste on the insulating film, there is no need to form a sheet-like phosphor layer in advance.
Since no cracks occur in the formed phosphor layer during formation of the phosphor layer, high-quality EL display elements can be manufactured with good yield.
なお、1は透明絶縁フイルム、2は透明電極、
3は螢光体層、4は対向電極、5は保護フイルム
である。 In addition, 1 is a transparent insulating film, 2 is a transparent electrode,
3 is a phosphor layer, 4 is a counter electrode, and 5 is a protective film.
実施例 2
第5図は、本実施例による製造過程上のEL表
示素子の断側面図である。実施例1と同様にして
EL表示素子基体を作製し、第5図に示した如く
EL表示素子基体外周部に三フツ化塩化エチレン
からなるコの字形状の封止材9で挾み、開孔部8
には、三フツ化塩化エチレンからなる傘状の封止
材10をあてる。次に外周部及び開孔部周辺に、
250〜350℃に熱したヒーターコテ又は熱風を吹き
付けて封止材9,10を溶融封止してEL表示素
子を完成する。本実施例においても、完成された
EL表示素子は、周辺部も完全に密封され、小型
で信頼性高いものである。Example 2 FIG. 5 is a cross-sectional side view of an EL display element during the manufacturing process according to this example. Same as Example 1
An EL display element substrate was prepared, as shown in Figure 5.
A U-shaped sealing material 9 made of trifluorochloroethylene is sandwiched around the outer periphery of the EL display element substrate, and an opening 8 is formed.
An umbrella-shaped sealing material 10 made of ethylene trifluoride chloride is applied. Next, around the outer periphery and the opening,
The sealing materials 9 and 10 are melted and sealed using a heating iron heated to 250 to 350° C. or by blowing hot air to complete the EL display element. In this example as well, the completed
The EL display element is completely sealed around the periphery, and is small and highly reliable.
なお、1は透明絶縁フイルム、2は透明電極、
3は螢光体層、4は対向電極、5は保護フイルム
である。 In addition, 1 is a transparent insulating film, 2 is a transparent electrode,
3 is a phosphor layer, 4 is a counter electrode, and 5 is a protective film.
実施例 3
実施例1と同様にしてEL表示素子基体の開孔
部を含めた周辺部をレーザービーム又は赤外線ビ
ーム等の加熱用ビームで上下から250〜350℃に加
熱すると上下の防湿保護フイルムは、溶融流動し
て切断面上を覆う。この後加熱用ビームを取り除
けば周辺部が冷却され三フツ化塩化エチレンから
なる強固な防湿膜が形成される。Example 3 In the same manner as in Example 1, when the periphery of the EL display element substrate including the opening is heated from above and below to 250 to 350°C using a heating beam such as a laser beam or an infrared beam, the upper and lower moisture-proof protective films are heated. , it melts and flows to cover the cut surface. After that, when the heating beam is removed, the peripheral area is cooled and a strong moisture-proof film made of trifluorochloroethylene is formed.
叙上の説明でわかるように、本発明において
は、あらかじめシート状の螢光体層を成形加工し
ておく必要がなく、螢光体層の形成に際し、形成
された螢光体層に亀裂が発生しないため、高品質
のEL表示素子を歩留り良く製造できる。又、さ
らに非表示部を極めて小さくすることができるた
め形状設計の自由度も大きく、又EL表示素子基
体端部に空隙ができることなく信頼性の高いEL
表示素子基体を提供できる大きな利点がある。 As can be seen from the above description, in the present invention, there is no need to form a sheet-like phosphor layer in advance, and there is no need to form cracks in the phosphor layer when forming the phosphor layer. Since this does not occur, high-quality EL display elements can be manufactured with high yield. Furthermore, since the non-display area can be made extremely small, there is a greater degree of freedom in shape design, and there is no gap at the edge of the EL display element substrate, making it highly reliable.
There is a great advantage in that it can provide a display element substrate.
第1図はEL表示素子の要部拡大断側面図、第
2図A,Bは従来例でそれぞれEL表示素子の正
面図及び端部断側面図、第3図は従来例で開孔部
を有するEL表示素子の正面図であり、第4図は
本発明の実施例で、同図AはEL表示素子の正面
図、同図Bは端部断側面図、第5図は本発明の他
の実施例である。
1……透明絶縁フイルム、2……透明電極、3
……螢光体層、4……対向電極、5……保護フイ
ルム、6……EL表示素子基体、7……空隙、8
……開孔部、9,10……封止材。
Fig. 1 is an enlarged cross-sectional side view of the main part of an EL display element, Fig. 2 A and B are a front view and an end sectional side view of a conventional EL display element, respectively, and Fig. 3 is a conventional example showing an opening. FIG. 4 is a front view of an EL display element according to an embodiment of the present invention, FIG. 4A is a front view of the EL display element, FIG. This is an example. 1...Transparent insulating film, 2...Transparent electrode, 3
... Fluorescent layer, 4 ... Counter electrode, 5 ... Protective film, 6 ... EL display element substrate, 7 ... Gap, 8
... Opening portion, 9, 10 ... Sealing material.
Claims (1)
た透明絶縁フイルム上に螢光体形成用ペーストを
塗布・乾燥して螢光体層を連続形成し螢光体フイ
ルムを作製する工程と、前記螢光体フイルムの螢
光体層上に金属箔を圧着して連続した発光フイル
ムを作製する工程と、前記発光体フイルムを、2
枚の保護フイルムで上下より挾み込み加熱圧着封
止して連続したEL表示素子基体フイルムを作製
する工程と、前記EL表示素子基体フイルムを任
意の形状に打ち抜き切断してEL表示素子基体を
作製する工程と、前記EL表示素子基体の切断部
周辺を封止する工程とよりなることを特徴とする
EL表示素子の製造方法。1. A step of manufacturing a phosphor film by coating and drying a phosphor-forming paste on a transparent insulating film on which transparent electrodes of a predetermined shape are continuously formed on the surface to continuously form a phosphor layer; a step of press-bonding a metal foil onto the phosphor layer of the phosphor film to produce a continuous luminescent film; and 2.
A process of creating a continuous EL display element base film by inserting two protective films from above and below and sealing them by heat and pressure, and punching and cutting the EL display element base film into an arbitrary shape to produce an EL display element base. and a step of sealing the periphery of the cut portion of the EL display element substrate.
Method for manufacturing EL display elements.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57082908A JPS58198893A (en) | 1982-05-17 | 1982-05-17 | Method of producing el display element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57082908A JPS58198893A (en) | 1982-05-17 | 1982-05-17 | Method of producing el display element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58198893A JPS58198893A (en) | 1983-11-18 |
JPS6235236B2 true JPS6235236B2 (en) | 1987-07-31 |
Family
ID=13787349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57082908A Granted JPS58198893A (en) | 1982-05-17 | 1982-05-17 | Method of producing el display element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58198893A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002093982A1 (en) * | 2001-05-16 | 2002-11-21 | Matsushita Electric Industrial Co., Ltd. | El element and illumination unit comprising it |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5031789A (en) * | 1973-07-23 | 1975-03-28 |
-
1982
- 1982-05-17 JP JP57082908A patent/JPS58198893A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5031789A (en) * | 1973-07-23 | 1975-03-28 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002093982A1 (en) * | 2001-05-16 | 2002-11-21 | Matsushita Electric Industrial Co., Ltd. | El element and illumination unit comprising it |
CN1315358C (en) * | 2001-05-16 | 2007-05-09 | 松下电器产业株式会社 | EL element and lighting equipment using the EL element |
Also Published As
Publication number | Publication date |
---|---|
JPS58198893A (en) | 1983-11-18 |
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