JPS62299937A - Optical shutter array - Google Patents

Optical shutter array

Info

Publication number
JPS62299937A
JPS62299937A JP14506186A JP14506186A JPS62299937A JP S62299937 A JPS62299937 A JP S62299937A JP 14506186 A JP14506186 A JP 14506186A JP 14506186 A JP14506186 A JP 14506186A JP S62299937 A JPS62299937 A JP S62299937A
Authority
JP
Japan
Prior art keywords
thin film
electrode
shutter array
optical shutter
electro
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14506186A
Other languages
Japanese (ja)
Inventor
Hirohisa Kitano
博久 北野
Jiro Nakanishi
次郎 中西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Minolta Co Ltd
Original Assignee
Minolta Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Minolta Co Ltd filed Critical Minolta Co Ltd
Priority to JP14506186A priority Critical patent/JPS62299937A/en
Publication of JPS62299937A publication Critical patent/JPS62299937A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To reduce a driving voltage, to suppress the generation of crosstalk and to increase the density of an optical shutter array by thinning the thickness of a thin film consisting of a ferroelectric substance provided with electro-optic effect, and forming a sandwich structure consisting of an electrode, a ferroelectric substance and an electrode. CONSTITUTION:The optical shutter array is provided with a thin film 23 consisting of a ferroelectric substance (PLZT) indicating electro-optic effects, a light transmissible common electrode 22 formed on one side of the thin film 23, plural band-like individual electrodes 24 formed on the other side of the thin film 23, and having large optical reflection factors, and a driving part for selecting any one of the individual electrodes 24 and applying a voltage between the selected electrode 24 and the common electrode 22. The optical shutter array 31 connected to a driving power source 32 is arranged so as to form 45 deg. respectively from a polarizer 33 and an analyzer 34. Since the thickness of the PLZT thin film 23 having the electro-optic effects can be thinned, the driving voltage can be reduced and the generation of crosstalk can be suppressed. In addition, the high density formation of the optical shutter array can be attained by the simple sandwich structure consisting of the common electrode 22, the thin film 23 and the individual electrode 24.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、電気光学効果を示す強誘電物質を用いた光シ
ヤツタアレイに関する。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an optical shutter array using a ferroelectric material exhibiting an electro-optic effect.

従来の技術 現在、光ビームを利用するプリンタとしては、高速域で
は、レーザプリンタが用いられ、また、中、低速域では
、発光ダイオードや液晶を利用した光学ヘッドを備えた
プリンタが用いられている。
Conventional technology Currently, laser printers are used in high-speed ranges as printers that use light beams, and printers with optical heads that use light-emitting diodes or liquid crystals are used in medium- to low-speed ranges. .

ところが、レーザプリンタは、光学系が複雑、高価であ
ることや、プリンタ自身も大型化することなどの問題点
がある。液晶を用いたプリンタは、液晶自体の応答性が
悪いため、毎分7〜12枚以上の速さを要求することは
できない。また、発光ダイオードを用いたプリンタは、
高速化は比較的容易であるが、素子の光量のばらつきゃ
駆動回路が数A以上の容量の電源を必要とすること等の
問題点が残されている。
However, laser printers have problems such as the optical system being complicated and expensive, and the printer itself becoming large. Printers using liquid crystals cannot be required to print more than 7 to 12 pages per minute because the liquid crystal itself has poor responsiveness. In addition, printers using light emitting diodes are
Although increasing the speed is relatively easy, there are still problems such as variations in the amount of light between the elements and the drive circuit requiring a power source with a capacity of several amperes or more.

そこで、高速化の要求に対応でき、しかも、小型化でき
る光学ヘッドとして、強誘電物質の電気光学効果(カー
効果、ポッケルス効果)を利用した光シャッタが研究さ
れている。代表的な強誘電材料としては、PLZT(ジ
ルコン酸チタン酸鉛ランタン、即ち、Pbx−xLax
(ZryTi+−y)1−xOa)がある。最もカ一定
数の大きな組成は、X=0.09゜Y=0.65である
Therefore, an optical shutter that utilizes the electro-optic effect (Kerr effect, Pockels effect) of ferroelectric materials is being researched as an optical head that can meet the demands for higher speeds and can be made smaller. A typical ferroelectric material is PLZT (lead lanthanum zirconate titanate, or Pbx-xLax
(ZryTi+-y)1-xOa). The composition with the largest force constant is X=0.09°Y=0.65.

第3図を用いて、電気光学効果を利用した光シヤツタア
レイの一例について説明する。第3図においては、数百
μm厚のP L Z T平板lの両面に、短尺状の上部
電極2,3.・・・と下部電極3,3.・・・かそれぞ
れ、互いに平行、等間隔且つP L Z T平板Iの」
1方から見て重なるように配列される。この光シヤツタ
アレイは、横モード型であって、入射光4は、矢印で示
す方向に入射する。P L Z T平板lの両端面は互
いに平行に光学研磨されていて、また、図示しないが、
偏光子が入射面側に、また、検光子が出射面側に配置さ
れる。偏光子と検光子の偏光方向は互いに直交している
An example of an optical shutter array using the electro-optic effect will be described with reference to FIG. In FIG. 3, short upper electrodes 2, 3, . ... and lower electrodes 3, 3. . . . parallel to each other, equally spaced, and of P L Z T flat plates I."
They are arranged so that they overlap when viewed from one side. This optical shutter array is of a transverse mode type, and the incident light 4 enters in the direction shown by the arrow. Both end faces of the P L Z T flat plate l are optically polished parallel to each other, and although not shown,
A polarizer is placed on the incident surface side, and an analyzer is placed on the exit surface side. The polarization directions of the polarizer and analyzer are orthogonal to each other.

この光シヤツタアレイにおいて、電極2,3へ電圧5を
印加するか否かに対応して、光は透過し、または、遮断
される。即ち、電圧を印加していない場合は、偏光子を
透過した平行光束4は、偏光状態を変化させずにPLZ
T平板1を透過し、検光子により遮断される。一方、電
圧が印加されると、PLZT平板lにおいて、光路と垂
直方向に電界が生じるので、複屈折が生じ、楕円偏光が
生じる。したがって、一部の光は、検光子を透過する。
In this optical shutter array, light is transmitted or blocked depending on whether a voltage 5 is applied to the electrodes 2 and 3. That is, when no voltage is applied, the parallel light beam 4 transmitted through the polarizer becomes PLZ without changing the polarization state.
The light passes through the T-plate 1 and is blocked by the analyzer. On the other hand, when a voltage is applied, an electric field is generated in the PLZT flat plate l in a direction perpendicular to the optical path, resulting in birefringence and elliptically polarized light. Therefore, some light is transmitted through the analyzer.

第4図は、光シヤツタアレイの他の一例を示す。FIG. 4 shows another example of an optical shutter array.

この例では、P L Z T平板lの片■1に、電極1
2゜12、・・・と櫛形の共通電極13を設ける。電極
12.13の間にスイッチ6により電圧を印加すると、
同様に電気光学効果により光が透過する。
In this example, electrode 1 is placed on piece 1 of P L Z T flat plate l.
A comb-shaped common electrode 13 is provided. When a voltage is applied by switch 6 between electrodes 12.13,
Similarly, light is transmitted through the electro-optic effect.

発明の解決すべき問題点 第3図に示す光シヤツタアレイにおいては、1)L Z
 T平板1が数百ミクロン程度の厚みを有しているので
、十分な電気光学効果を示す電界を印加するには、数百
ボルトの大きな駆動電圧が必要である。そして、第3図
に示す電極の配置においては、PLZT平板1の膜厚に
比べ電極の幅が十分に広(ないため、隣り合う電極との
クロストークも発生する。また、第4図に示す電極の平
面配置においては、シャッタ密度をあげることが困難で
ある。
Problems to be Solved by the Invention In the optical shutter array shown in FIG. 3, 1) L Z
Since the T-plate 1 has a thickness of about several hundred microns, a large drive voltage of several hundred volts is required to apply an electric field that exhibits a sufficient electro-optical effect. In the arrangement of the electrodes shown in FIG. 3, the width of the electrodes is not sufficiently wide compared to the film thickness of the PLZT flat plate 1, so crosstalk with adjacent electrodes also occurs. In a planar arrangement of electrodes, it is difficult to increase the shutter density.

これらの問題点を解決するため、種々の試みがなされて
いる。クロストークの防止のため、特開昭58−130
321号公報においては、電極2゜2、・・・の間に溝
を設ける。また、特開昭58−130.323号公報と
特開昭58−88721号公報においては、電極の形状
や配置を工夫して、クロストークを防止しているが、シ
ャッタ密度は高くできない。特開昭60−97318号
公報においては、片面電極配置で沿面放電を防止するた
め、電極上にシール材(Si02)を設けて、シャッタ
密度を高める試みが提案されている。これらの提案は、
しかしながら、高い駆動電圧を必要とするという本質的
な問題点を解消しうるものではなかった。
Various attempts have been made to solve these problems. To prevent crosstalk, JP-A-58-130
In Japanese Patent No. 321, grooves are provided between the electrodes 2.2, . . . . Further, in Japanese Patent Laid-Open No. 58-130.323 and Japanese Patent Laid-Open No. 58-88721, the shape and arrangement of electrodes are devised to prevent crosstalk, but the shutter density cannot be increased. Japanese Patent Laid-Open No. 60-97318 proposes an attempt to increase the shutter density by providing a sealing material (Si02) on the electrode in order to prevent creeping discharge in a single-sided electrode arrangement. These suggestions are
However, this did not solve the essential problem of requiring a high driving voltage.

本発明の目的は、駆動電圧が低く、クロストークを生じ
ず、かつ、高密度化の可能な電気光学効果を利用した光
シヤツタアレイを提供することである。
SUMMARY OF THE INVENTION An object of the present invention is to provide an optical shutter array that uses an electro-optic effect that has a low driving voltage, does not cause crosstalk, and can be increased in density.

問題点を解決するための手段 本発明に係る光シヤツタアレイは、電気光学効果を示す
強誘電物質の薄膜と、この薄膜の一方の側に設けられた
光透過性の共通電極と、前記薄膜の他方の側に設けられ
光学的反射率が大きい複数の帯状の個別電極と、前記個
別電極を選択して個−へ − 別電極と共通電極との間に電圧を印加する駆動部とを備
えたことを特徴とする。
Means for Solving the Problems The optical shutter array according to the present invention comprises a thin film of a ferroelectric material exhibiting an electro-optic effect, a light-transmissive common electrode provided on one side of the thin film, and the other side of the thin film. a plurality of band-shaped individual electrodes provided on the side of the electrode and having a large optical reflectance, and a drive unit that selects the individual electrodes and applies a voltage between the individual electrodes and the common electrode. It is characterized by

作  用 電気光学効果を有する強誘電物質の薄膜の厚さが薄くで
きるので、駆動電圧を小さくでき、また、クロストーク
が生じない。
Since the thin film of the ferroelectric material having the electro-optic effect can be made thinner, the driving voltage can be reduced and crosstalk does not occur.

共通電極−薄膜−個別電極の簡素なサンドイッチ構造で
あるので、高密度化が可能である。
Since it has a simple sandwich structure of common electrode-thin film-individual electrodes, high density is possible.

実施例 以下、添付の図面を用いて本発明の詳細な説明する。Example Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

第1図に、本発明の実施例の図式的な断面図を示す。耐
熱性の平滑化された石英基板21上に、ITOからなる
透明共通電極(22)を全面に設ける。次に、RFスパ
ッタ法でPLZT薄膜(23)を成長させる。
FIG. 1 shows a schematic cross-sectional view of an embodiment of the invention. A transparent common electrode (22) made of ITO is provided on the entire surface of a heat-resistant smooth quartz substrate 21. Next, a PLZT thin film (23) is grown by RF sputtering.

このPLZT薄膜(23)の形状方法について説明する
と、まず600℃以上にまで加熱し、IQ  Torr
以上の真空度にまで排気する。ターゲットとしてPLZ
T粉末に適量のpboを添加したものを用いArと02
との混合雰囲気下でスパッタを所定時間行う。これによ
って本実施例においては約311m厚のI) L 7.
 T薄膜(23)を得た。さらにその−にに光学的反射
率の大きい金属(たとえば、白金)からなる帯状の個別
電極(24)を成長させる。第1図中斜線部は個別電極
(24)に電圧を印加したときに電界の生じる部分(シ
ャツタ窓)を示す。図示しないが、個別電極(24)は
、スイッチング手段を介して電源に接続する。
To explain how to shape this PLZT thin film (23), first, it is heated to 600°C or higher, and then the IQ Torr
Evacuate to a vacuum level above. PLZ as a target
Ar and 02 using T powder with an appropriate amount of pbo added.
Sputtering is performed in a mixed atmosphere for a predetermined period of time. As a result, in this example, the I) L7. has a thickness of approximately 311 m.
A T thin film (23) was obtained. Furthermore, a strip-shaped individual electrode (24) made of a metal with high optical reflectance (for example, platinum) is grown on top of it. The shaded area in FIG. 1 indicates a portion (shaft window) where an electric field is generated when a voltage is applied to the individual electrode (24). Although not shown, the individual electrodes (24) are connected to a power source via switching means.

第5図に先に説明した実施例の仰形例を示す。FIG. 5 shows an elevated version of the previously described embodiment.

この変形例において、前述した実施例と異なる点は、基
板(21)の側に個別電極(24)を設けた点であり、
その素材、製造法は全く同様のものである。
This modification differs from the above-described embodiment in that individual electrodes (24) are provided on the substrate (21) side.
The materials and manufacturing methods are exactly the same.

したかって、基板(21)の側から個別電極(24)、
PL Z T薄膜(23)、透明共通電極(22)の順
に配設しである。
Therefore, from the substrate (21) side, the individual electrodes (24),
A PLZT thin film (23) and a transparent common electrode (22) are arranged in this order.

本実施例においては、PLZT薄膜23の厚みが非常に
薄いため、クロストークの発生がなく、しかも、駆動電
圧が小さくできる。即ち、本発明によれば、PLZT薄
膜の厚みは約05〜50μm、好ましくは05〜30μ
mと従来と比べてかなり薄(でよい。膜厚は50μm以
上とすると、シャッタ効率(透過率)が向上するが、逆
に印加電圧も大きくしなければならないという欠点があ
る。更に、P L Z T薄膜は、その形成が通常RF
スパッタ法で行なわれるが、成長速度は一般に04〜0
6μm/hrと非常に遅いので、厚くすることは製造面
(時間、コスト)で著しく制約を受ける。また、逆に膜
厚が05μm以下とすれば、シャッタ効率が悪い。
In this embodiment, since the thickness of the PLZT thin film 23 is very thin, crosstalk does not occur and the driving voltage can be reduced. That is, according to the present invention, the thickness of the PLZT thin film is about 05-50 μm, preferably 05-30 μm.
m, which is considerably thinner than the conventional film.If the film thickness is 50 μm or more, the shutter efficiency (transmittance) will improve, but there is a drawback that the applied voltage must also be increased.Furthermore, P L ZT thin films are typically formed using RF
This is done by sputtering, but the growth rate is generally 0.4~0.
Since the speed is very slow at 6 μm/hr, increasing the thickness is severely restricted in terms of manufacturing (time, cost). On the other hand, if the film thickness is 0.5 μm or less, the shutter efficiency will be poor.

また、本発明ではP L Z T薄膜の厚さが小さいの
で、電極幅はそれより充分長くでき(たとえば1μm厚
の薄膜に対し40μm程度の幅)、電極を高密度化(た
とえば20ドツト/mm)しても、クロストークの発生
がなく、高い解像力か得られる。
In addition, in the present invention, since the thickness of the P L Z T thin film is small, the electrode width can be made sufficiently longer (for example, about 40 μm width for a 1 μm thick thin film), and the electrode can be made denser (for example, 20 dots/mm). ), there is no crosstalk and high resolution can be obtained.

本実施例においては、電気光学効果を示す誘電体材料と
して、最もカー効果の大きなPT、ZTを用いたが、B
aTi0a、S r T i Oa、KTi03等を用
いてもよい。また必要に応じて、第1図に示す固別電極
(24)間のP L Z T (23)表面に反射防止
膜を設けることも可能である。
In this example, PT and ZT, which have the largest Kerr effect, were used as dielectric materials exhibiting an electro-optic effect, but B
aTi0a, S r T i Oa, KTi03, etc. may also be used. Furthermore, if necessary, it is also possible to provide an anti-reflection film on the surface of the P L Z T (23) between the solid electrodes (24) shown in FIG.

第2図に、第1図及び第5図に示した光シヤツタアレイ
31を光プリンタの光学ヘッドに用いた場合の構成を示
す。駆動電源32に接続された光シヤツタアレイ31を
、偏光子33と検光子34とにそれぞれ45°をなすよ
うに配置する。光源35と平行光束化ミラー36とは、
光源35から発生した光が平行光束化ミラー36で反射
され、平行光束として偏光子33に入射するように配置
する。偏光子33に入射した光は、直線偏光されて光シ
ヤツタアレイ31に入射され、個別電極24で反射され
、検光子34に導かれる。そして、検光子34で再び直
線偏光された後、集束性レンズ36によって感光体ドラ
ム37に入射し、感光体を露光する。光が光シヤツタア
レイ31に直接入射すると、光路とPLZT中の電界と
が平行になり、楕円偏光が生じない。光シヤツタアレイ
31を光の方向に対して斜めに配置したのは、楕円偏光
を生じさせるためである。
FIG. 2 shows a configuration in which the optical shutter array 31 shown in FIGS. 1 and 5 is used in an optical head of an optical printer. An optical shutter array 31 connected to a driving power source 32 is arranged at an angle of 45° to a polarizer 33 and an analyzer 34, respectively. The light source 35 and the collimating mirror 36 are
The arrangement is such that the light generated from the light source 35 is reflected by a collimating mirror 36 and enters the polarizer 33 as a parallel beam. The light incident on the polarizer 33 is linearly polarized, enters the optical shutter array 31, is reflected by the individual electrodes 24, and is guided to the analyzer 34. After being linearly polarized again by the analyzer 34, the light enters the photoreceptor drum 37 through the converging lens 36 and exposes the photoreceptor. When light is directly incident on the optical shutter array 31, the optical path and the electric field in the PLZT become parallel, and no elliptical polarization occurs. The reason why the optical shutter array 31 is arranged obliquely to the direction of light is to generate elliptically polarized light.

偏光子を透過した光は、個別電極24で反射されるので
、PLZT薄膜23中の光路の長さが実質上2倍になる
。リターディションは膜厚dと比例関係(r=d・△n
)にあり、薄膜の場合は小さい。
Since the light transmitted through the polarizer is reflected by the individual electrodes 24, the length of the optical path in the PLZT thin film 23 is substantially doubled. Retardation is proportional to film thickness d (r=d・△n
), and is small in the case of thin films.

しかし、反射型の光路を用いることにより大きなりター
ディジョンが得られる。
However, by using a reflective optical path, a large terdition can be obtained.

第2図に示した光学系配置において、画像情報に応じて
駆動回路32(駆動電圧は20ボルト)により光シヤツ
タアレイ31を構成する各素子(シャツタ窓)を開閉し
、感光体37上に画像の書き込み(露光)を行った。図
示しないが、帯電、現像、転写等の作像プロセスは、通
常の電子写真プリンタに用いるものと同じである。
In the optical system arrangement shown in FIG. 2, each element (shutter window) constituting the optical shutter array 31 is opened and closed by a drive circuit 32 (driving voltage: 20 volts) according to image information, and an image is displayed on a photoreceptor 37. Writing (exposure) was performed. Although not shown, image forming processes such as charging, development, and transfer are the same as those used in ordinary electrophotographic printers.

こうして得られた画像は、クロストロークかないので非
常に解像度に優れ、しかも、十分なコントラストを有し
ていて、従来のレーザビームプリンタに比へ何ら劣ると
ころがなかった。
The image thus obtained had very high resolution since there were no cross strokes, and also had sufficient contrast, and was in no way inferior to conventional laser beam printers.

発明の効果 本発明に係る光シヤツタアレイにおいては、電気光学効
果を有する強誘電物質の厚さが薄くできるので、駆動電
圧が小さくて、大きな電気光学効果が得られる。また、
クロストロークが生じず、コスト的にも低置である。
Effects of the Invention In the optical shutter array according to the present invention, since the thickness of the ferroelectric material having an electro-optic effect can be made thin, a large electro-optic effect can be obtained with a small driving voltage. Also,
No cross stroke occurs and the cost is low.

lO− 入射光が共通電極で反射されるので、光路が倍になり、
大きな電気光学効果が得られる。
lO- Since the incident light is reflected by the common electrode, the optical path is doubled,
A large electro-optic effect can be obtained.

電極−強誘電物質−電極のサンドイッチ構造であるので
、高密度化が可能である。また、透明電極が共通電極で
あるため、透明電極の電気抵抗成分を小さくでき、比較
的高い周波数で駆動しても発熱等がな(安定したシャッ
タ特性が得られ、さらに個別電極が帯状の電極になって
いるためシャッタ部以外の反射光が少なく解像度が向上
する。
Since it has a sandwich structure of electrode-ferroelectric material-electrode, it is possible to increase the density. In addition, since the transparent electrode is a common electrode, the electrical resistance component of the transparent electrode can be reduced, and there is no heat generation even when driven at a relatively high frequency (stable shutter characteristics can be obtained, and the individual electrodes are strip-shaped electrodes). This reduces the amount of light reflected from areas other than the shutter area, improving resolution.

電気光学素子の図式的な断面図である。FIG. 2 is a schematic cross-sectional view of an electro-optical element.

第2図は、本発明に係る光シヤツタアレイを光学ヘッド
として用いた光プリンタの構成を示す図である。
FIG. 2 is a diagram showing the configuration of an optical printer using the optical shutter array according to the present invention as an optical head.

第3図と第4図は、それぞれ、従来の光シヤツタアレイ
を図式的に示す図である。
FIGS. 3 and 4 are diagrams each schematically showing a conventional optical shutter array.

21・・・基板、22・・・共通透明電極、23・・・
PLZT薄膜、24・・・個別反射電極。
21... Substrate, 22... Common transparent electrode, 23...
PLZT thin film, 24...individual reflective electrode.

出願人  ミノルタカメラ株式会社 −11= 茅I 函 第5図 第3図 第2図 す 第4図Applicant: Minolta Camera Co., Ltd. −11= Kaya I box Figure 5 Figure 3 Figure 2 vinegar Figure 4

Claims (1)

【特許請求の範囲】[Claims] (1)電気光学効果を示す強誘電物質の薄膜と、この薄
膜の一方の側に設けられた光透過性の共通電極と、前記
薄膜の他方の側に設けられ光学的反射率が大きい複数の
帯状の個別電極と、前記個別電極を選択して個別電極と
共通電極との間に電圧を印加する駆動部とを備えたこと
を特徴とする光シャッタアレイ。
(1) A thin film of ferroelectric material exhibiting an electro-optic effect, a light-transmitting common electrode provided on one side of the thin film, and a plurality of common electrodes with high optical reflectance provided on the other side of the thin film. An optical shutter array comprising band-shaped individual electrodes and a drive unit that selects the individual electrodes and applies a voltage between the individual electrodes and a common electrode.
JP14506186A 1986-06-20 1986-06-20 Optical shutter array Pending JPS62299937A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14506186A JPS62299937A (en) 1986-06-20 1986-06-20 Optical shutter array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14506186A JPS62299937A (en) 1986-06-20 1986-06-20 Optical shutter array

Publications (1)

Publication Number Publication Date
JPS62299937A true JPS62299937A (en) 1987-12-26

Family

ID=15376473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14506186A Pending JPS62299937A (en) 1986-06-20 1986-06-20 Optical shutter array

Country Status (1)

Country Link
JP (1) JPS62299937A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5029989A (en) * 1990-02-06 1991-07-09 Motorola, Inc. PLZT shutter
WO1991018305A1 (en) * 1990-05-14 1991-11-28 Radiant Technologies, Inc. Light actuated optical switching device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5029989A (en) * 1990-02-06 1991-07-09 Motorola, Inc. PLZT shutter
WO1991018305A1 (en) * 1990-05-14 1991-11-28 Radiant Technologies, Inc. Light actuated optical switching device
US5078478A (en) * 1990-05-14 1992-01-07 Radiant Technologies, Inc. Light actuated optical switching device

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