JPS62299394A - Optical recording medium - Google Patents
Optical recording mediumInfo
- Publication number
- JPS62299394A JPS62299394A JP61143383A JP14338386A JPS62299394A JP S62299394 A JPS62299394 A JP S62299394A JP 61143383 A JP61143383 A JP 61143383A JP 14338386 A JP14338386 A JP 14338386A JP S62299394 A JPS62299394 A JP S62299394A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- selenium
- recording
- nitrogen
- tellurium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 21
- 239000011669 selenium Substances 0.000 claims abstract description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 24
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 21
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 14
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 10
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 16
- 239000000470 constituent Substances 0.000 abstract 5
- 238000010276 construction Methods 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
- 229910001370 Se alloy Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- -1 etc. Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000011116 polymethylpentene Substances 0.000 description 2
- 229920000306 polymethylpentene Polymers 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B7/2433—Metals or elements of groups 13, 14, 15 or 16 of the Periodic System, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/24322—Nitrogen
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
Abstract
Description
【発明の詳細な説明】
3、発明の詳細な説明
[産業上の利用分野]
本発明はレーザ光によって情報を記録再生することので
きる光記録媒体に関するものである。Detailed Description of the Invention 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to an optical recording medium on which information can be recorded and reproduced using laser light.
[従来の技術]
レーザ光によって情報を媒体に記録し、かつ再生する光
デイスクメモリは、記録密度が高いことから大容量記録
装置として優れた特徴を有している。この光記録媒体材
料としては、テルル(Te>等のカルコゲン元素又はこ
れらの化合物が使用されている(特公昭47−2689
7@公報)。とくにテルル−セレン系合金はよく使用さ
れている(特公昭54−41902号公報、特公昭57
−7919号公報、特公昭57−56058号公報)。[Prior Art] Optical disk memories, which record and reproduce information on a medium using laser light, have excellent features as large-capacity recording devices because of their high recording density. Chalcogen elements such as tellurium (Te>) or compounds thereof are used as materials for this optical recording medium (Japanese Patent Publication No. 47-2689).
7@Publication). In particular, tellurium-selenium alloys are often used (Japanese Patent Publication No. 41902/1983, Japanese Patent Publication No. 57/1983).
-7919, Japanese Patent Publication No. 57-56058).
近年、記録装置を小型化するため、レーザ光源としては
半導体レーザが使用されてきている。半導体レーザは発
振波長が8″000人前後であるが、テルル−セレン系
合金はこの波長帯にも比較的よく適合し、適度な反射率
と適度な吸収率が得られる(フィジカ・スティタス・ソ
リダイ、 7,189.1964(phys、 5ta
t、 sol、 7.189.1964) )。In recent years, in order to downsize recording devices, semiconductor lasers have been used as laser light sources. Semiconductor lasers have an oscillation wavelength of around 8,000 nm, and tellurium-selenium alloys are relatively well suited to this wavelength range, and can provide moderate reflectance and moderate absorption. , 7,189.1964 (phys, 5ta
t, sol, 7.189.1964)).
このテルル−セレン系合金を光記録層として用いた光記
録媒体は第2図に示すような構成になっている。すなわ
ち基板1に隣接してテルル−セレン系合金よりなる記録
層21が設けられている。記録用レーザ光は基板1を通
して記録層21に集光照射され、ピット22が形成され
る。基板1としてはポリカーボネート、ポリオレフィン
、ポリメチルペンテン、アクリル、エポキシ樹脂等の合
成樹脂やガラスが使用さも、基板1にはピットが同心円
状あるいはスパイラル状に一定間隔で精度よく記録され
るように通常案内溝が設けられている。An optical recording medium using this tellurium-selenium alloy as an optical recording layer has a structure as shown in FIG. That is, a recording layer 21 made of a tellurium-selenium alloy is provided adjacent to the substrate 1. The recording laser beam is focused and irradiated onto the recording layer 21 through the substrate 1, and pits 22 are formed. The substrate 1 is made of synthetic resin such as polycarbonate, polyolefin, polymethylpentene, acrylic, epoxy resin, etc., or glass. Usually, the substrate 1 is guided so that pits are recorded concentrically or spirally at regular intervals. A groove is provided.
レーザビーム径程度の幅の溝に光が入射すると光は回折
され、ビーム中心が溝からずれるにつれて回折光強度の
空間分布が変化するので、これを検出してレーザビーム
を溝の中心に入射させるようにサーボ系が構成されてい
る。溝の幅は通常0.3〜1.31JMであり、溝の深
さは使用するレーザ波長の1712から174の範囲に
設定される。集光に関しても同様にサーボ系が構成され
ている。情報の読み出しは、記録のときよりも弱いパワ
ーのレーザ光をピット上を通過するように照射すること
により、ピットの有無に起因する反射率の変化を検出し
て行なう。この再生用レーザ光のパワーは大きいほうが
、再生信号やサーボ用信号を大きくでき外界ノイズの影
響をうけにくいので望ましい。When light enters a groove with a width similar to the diameter of the laser beam, the light is diffracted, and as the beam center shifts from the groove, the spatial distribution of the intensity of the diffracted light changes.This is detected and the laser beam is directed to the center of the groove. The servo system is configured as follows. The width of the groove is usually 0.3 to 1.31 JM, and the depth of the groove is set within the range of 1712 to 174 of the laser wavelength used. A servo system is similarly configured for condensing light. Information is read by irradiating a laser beam with a weaker power than during recording so as to pass over the pits, and detecting changes in reflectance due to the presence or absence of pits. It is desirable that the power of this reproducing laser beam be large, since this allows the reproduction signal and servo signal to be increased and is less susceptible to external noise.
[発明が解決しようとする問題点]
しかしながら、前記したような従来の光記録媒体におい
て、記録層として用いられているテルル−セレン系合金
はその組成を制御することが容易ではなく、そのため量
産性に問題があった。また充分に良好な記録再生特性は
得られなかった。[Problems to be Solved by the Invention] However, in the conventional optical recording media as described above, it is not easy to control the composition of the tellurium-selenium alloy used as the recording layer, and therefore mass production is difficult. There was a problem. Furthermore, sufficiently good recording and reproducing characteristics were not obtained.
一方、本発明者らは、基板の上にセレン層、テルル層、
セレン層を順次積層して記録層とすることにより、量産
性および耐候性に浸れ、かつ高感度で良好な記録再生特
性を有する光記録媒体となることを見出し、すでに提案
している。On the other hand, the present inventors formed a selenium layer, a tellurium layer on the substrate,
We have already found and proposed that by sequentially laminating selenium layers to form a recording layer, an optical recording medium can be obtained that is mass-producible, weather resistant, highly sensitive, and has good recording and reproducing characteristics.
本発明はこれをざらに改善したもので、量産性および耐
候性に優れ、かつ高感度で信号品質が良好であると共に
、充分に大きなレーザパワーで長時間再生しうる光記録
媒体を提供することを目的とする。The present invention is a rough improvement on this, and provides an optical recording medium that is excellent in mass production and weather resistance, has high sensitivity and good signal quality, and can be reproduced for a long time with a sufficiently large laser power. With the goal.
[問題点を解決するための手段]
本発明は基板と、レーザ光によって一部が選択的に除去
されて情報を記録する前記基板上に形成された記録層と
からなる光記録媒体において、前記記録層中に、順次積
層されたセレンを主成分とする層、テルルおよび窒素を
主成分とする層およびセレンを主成分とする層を少なく
とも有していることを特徴とする光記録媒体である。[Means for Solving the Problems] The present invention provides an optical recording medium comprising a substrate and a recording layer formed on the substrate, a portion of which is selectively removed by laser light to record information. An optical recording medium characterized in that the recording layer has at least a layer mainly composed of selenium, a layer mainly composed of tellurium and nitrogen, and a layer mainly composed of selenium, which are laminated in sequence. .
本発明においては例えば第1図に示すように基板1上に
セレンを主成分とする層(以下セレン層と略す)2、テ
ルルおよび窒素を主成分とする層(以下テルル−窒素層
と略す)3、およびセレン層4が順次積層されて記録層
を形成する。このほか、基板1とセレン層2の間および
/またはセレン層4の外方に他の層が存在するものであ
ってもよい。セレン層2、テルル−窒素層3およびセレ
ン層4の3層を少なくとも順次設けることにより大きな
レーザパワーで長時間再生しても再生特性が劣化せず、
優れた光記録媒体が得られる。In the present invention, for example, as shown in FIG. 1, a layer 2 containing selenium as a main component (hereinafter referred to as a selenium layer) 2 and a layer containing tellurium and nitrogen as a main component (hereinafter referred to as a tellurium-nitrogen layer) are provided on a substrate 1. 3 and selenium layer 4 are sequentially laminated to form a recording layer. In addition, other layers may be present between the substrate 1 and the selenium layer 2 and/or outside the selenium layer 4. By providing at least the three layers of selenium layer 2, tellurium-nitrogen layer 3, and selenium layer 4 in sequence, the reproduction characteristics do not deteriorate even when reproduced for a long time with high laser power.
An excellent optical recording medium can be obtained.
上下のセレン層の膜厚はそれぞれ5人〜100への範囲
、テルル−窒素層の膜厚は100人〜1000人の範囲
が記録再生特性、耐候性の観点から望ましい。テルル−
窒素層における窒素の含有量は原子数パーセントで2パ
一セント以上20パーセント未満が記録再生特性、耐゛
候性の観点から望ましい。The thickness of the upper and lower selenium layers is preferably in the range of 5 to 100 μm, and the thickness of the tellurium-nitrogen layer is preferably in the range of 100 to 1000 μm, from the viewpoint of recording/reproducing characteristics and weather resistance. tellurium
The content of nitrogen in the nitrogen layer is desirably 2% or more and less than 20% in terms of atomic percent from the viewpoint of recording/reproducing characteristics and weather resistance.
基板としてはポリカーボネート、ポリオレフィン、ポリ
メチルペンテン、アクリル、エポキシ樹脂等の合成樹脂
やガラスなど通常使用されているものが用いられる。As the substrate, commonly used materials such as synthetic resins such as polycarbonate, polyolefin, polymethylpentene, acrylic and epoxy resins, and glass are used.
[実施例コ 以下本発明の実施例について説明する。[Example code] Examples of the present invention will be described below.
実施例
ioo’cで2時間アニール処理した内径15端、外径
130m、厚さ1.2mのポリカーボネート樹脂ディス
ク基板を真空装置内に入れ、3 x 10’TOrr以
下に排気した。蒸発源として、第1の抵抗加熱用ボード
にテルル(Te)を入れ、第2の抵抗加熱用ポートにセ
レン(Se)を入れた。窒素ガス雰囲気での反応性蒸着
により、Seを主成分とする層を40人厚、Teと窒素
(N)の層を260人厚(Nの含有量は原子数パーセン
トで6パーセント)、Seを主成分とする層を40人厚
順次積層した。この光ディスクを95°Cの窒素雰囲気
中で1時間アニールしたのら、波長8300人にあける
基板入射反射率を測定したところ38%であった。波長
8300人の半導体装置ザ光を基板を通して入射して記
録層上で1.6Jj!riφ程度に絞り、媒体線速度5
.6m/Sec 、記録周波数3.77)IH2,記録
パルス幅70nsec 、記録パワー5.5mWの条件
で記録し、0.7m−で再生した。バンド幅30kH2
のキャリアーとノイズの比(C/N)は50dBと良好
であり、1 、0mWで106回再生しても同様に良好
であった。A polycarbonate resin disk substrate having an inner diameter of 15 ends, an outer diameter of 130 m, and a thickness of 1.2 m, which had been annealed for 2 hours in Example ioo'c, was placed in a vacuum apparatus and evacuated to 3 x 10' TOrr or less. As an evaporation source, tellurium (Te) was placed in the first resistance heating board, and selenium (Se) was placed in the second resistance heating port. By reactive vapor deposition in a nitrogen gas atmosphere, a layer containing Se as the main component was formed to a thickness of 40 mm, a layer of Te and nitrogen (N) was formed to a thickness of 260 mm (the content of N was 6% in terms of atomic percent), and a layer of Se The main component layers were sequentially laminated to a thickness of 40 layers. After this optical disk was annealed for 1 hour in a nitrogen atmosphere at 95° C., the substrate incident reflectance at a wavelength of 8300 was measured and found to be 38%. A semiconductor device with a wavelength of 8,300 people enters the light through the substrate and 1.6Jj! on the recording layer! Narrow down to about riφ, medium linear velocity 5
.. Recording was performed under the conditions of 6 m/Sec, recording frequency 3.77) IH2, recording pulse width 70 nsec, and recording power 5.5 mW, and reproduction was performed at 0.7 m-. Band width 30kHz2
The carrier-to-noise ratio (C/N) was good at 50 dB, and the same good result was obtained even after reproducing 106 times at 1.0 mW.
次に、本実施例のディスクを70’C180%の高温高
湿度の環境に60時間保存した後、上記特性を調べたが
変化はなく、耐候性に優れた光記録媒体であることが確
認された。Next, after storing the disk of this example in a 70'C 180% high temperature and high humidity environment for 60 hours, the above characteristics were examined, but there were no changes, confirming that it was an optical recording medium with excellent weather resistance. Ta.
比較のために通常の蒸着で40人厚のSe、 260
人厚のTe、 40人厚のSeを順次積層したディスク
では、1 、0mWF 106回再生するとC/Nが約
1dB劣化した。For comparison, 40-layer thick Se, 260
For a disk in which a Te layer with a thickness of 40 mm and a layer of Se with a thickness of 40 mm were sequentially laminated, the C/N deteriorated by approximately 1 dB after 106 times of playback at 1.0 mWF.
[発明の効果]
以上説明したように本発明の光記録媒体は量産性および
耐候性に優れていると共に、高感度で信号品質が良好で
あり、かつ充分に大きなレーザパワーで長時間再生しう
るちのである。[Effects of the Invention] As explained above, the optical recording medium of the present invention is excellent in mass production and weather resistance, has high sensitivity and good signal quality, and can be reproduced for a long time with a sufficiently large laser power. It's Chino.
第1図は本発明の光記録媒体の1実施例を示す部分断面
図、第2図は従来の光記録媒体を示す部分断面図である
。
1・・・基板
2.4・・・セレン層
3・・・テルル−窒素層
21・・・記録層
22・・・ピットFIG. 1 is a partial sectional view showing one embodiment of the optical recording medium of the present invention, and FIG. 2 is a partial sectional view showing a conventional optical recording medium. 1...Substrate 2.4...Selenium layer 3...Tellurium-nitrogen layer 21...Recording layer 22...Pit
Claims (1)
れて情報を記録する前記基板上に形成された記録層とか
らなる光記録媒体において、前記記録層中に、順次積層
されたセレンを主成分とする層、テルルおよび窒素を主
成分とする層およびセレンを主成分とする層を少なくと
も有していることを特徴とする光記録媒体。(1) In an optical recording medium consisting of a substrate and a recording layer formed on the substrate, a portion of which is selectively removed by a laser beam to record information, the recording layer includes selenium layered sequentially. 1. An optical recording medium comprising at least a layer containing tellurium as a main component, a layer containing tellurium and nitrogen as a main component, and a layer containing selenium as a main component.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61143383A JPS62299394A (en) | 1986-06-18 | 1986-06-18 | Optical recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61143383A JPS62299394A (en) | 1986-06-18 | 1986-06-18 | Optical recording medium |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62299394A true JPS62299394A (en) | 1987-12-26 |
JPH0481951B2 JPH0481951B2 (en) | 1992-12-25 |
Family
ID=15337494
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61143383A Granted JPS62299394A (en) | 1986-06-18 | 1986-06-18 | Optical recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62299394A (en) |
-
1986
- 1986-06-18 JP JP61143383A patent/JPS62299394A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0481951B2 (en) | 1992-12-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |