JPS62291896A - Thin film el panel - Google Patents
Thin film el panelInfo
- Publication number
- JPS62291896A JPS62291896A JP61135199A JP13519986A JPS62291896A JP S62291896 A JPS62291896 A JP S62291896A JP 61135199 A JP61135199 A JP 61135199A JP 13519986 A JP13519986 A JP 13519986A JP S62291896 A JPS62291896 A JP S62291896A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- transparent electrode
- panel
- insulating layer
- ito
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 30
- 239000001301 oxygen Substances 0.000 claims description 19
- 229910052760 oxygen Inorganic materials 0.000 claims description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 18
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 9
- 239000007772 electrode material Substances 0.000 claims description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000007789 gas Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Illuminated Signs And Luminous Advertising (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
３、発明の詳細な説明
〔４既要〕
この発明の薄膜ＥＬパネルは、五酸化クンタルの絶縁層
上にＥＬ発光層を形成する際に、該絶縁層の下に設けた
酸化インジウムスズの透明電極の抵抗値が増大するのを
防止するため、該透明電極と絶縁層との間に酸素含有量
の多い透明導電薄膜を介在させた構成を特徴としている
。Detailed Description of the Invention 3. Detailed Description of the Invention [4 Already Required] The thin film EL panel of the present invention is characterized in that when an EL light emitting layer is formed on an insulating layer of quintal pentoxide, a layer under the insulating layer is formed. In order to prevent the resistance value of the indium tin oxide transparent electrode from increasing, it is characterized by a structure in which a transparent conductive thin film with a high oxygen content is interposed between the transparent electrode and the insulating layer.
この発明は、薄膜ＥＬパネルに係り、さらに詳細には低
電圧駆動を可能とした透明電極構造に関するものである
。The present invention relates to a thin film EL panel, and more particularly to a transparent electrode structure that enables low voltage driving.
薄膜ＥＬパネルは、薄型でかつ高詳細な表示が可能であ
ることから情報、通信端末のディスプレイ装置として期
待されている。しかし、駆動電圧が〜２００ｖと高いた
め低電圧化が要求されている。Thin film EL panels are expected to be used as display devices for information and communication terminals because they are thin and capable of highly detailed display. However, since the driving voltage is as high as ~200V, lower voltage is required.
この低電圧化ＥＬパネルとして、ＥＬ発光層と透明電極
間の絶縁層に高誘電率な五酸化タンクル（Ｔａ２０５）
を用いたパネルが考えられ、駆動電圧を〜１００ｖにす
ることができている。For this low voltage EL panel, high dielectric constant tanker pentoxide (Ta205) is used as the insulating layer between the EL emitting layer and the transparent electrode.
A panel using this method has been considered, and the driving voltage can be set to ~100V.
Ｃ従来の技術〕
第３図はＴａ２０５を絶縁層に用いた薄膜ＥＬパネルの
構造を示す。この図において、１１はガラス基板、１２
は酸化インジウムスズ（ＩＴＯ）からなる透明電極、１
３および１４はＴａ２０５からなる絶縁層、１５はＺｎ
Ｓ；ＭｎからなるＥＬ発光層、１６はアルミニウム（Ａ
１）からなる背面電極である。C. Prior Art FIG. 3 shows the structure of a thin film EL panel using Ta205 as an insulating layer. In this figure, 11 is a glass substrate, 12
is a transparent electrode made of indium tin oxide (ITO), 1
3 and 14 are insulating layers made of Ta205, and 15 is Zn.
S: EL light emitting layer made of Mn, 16 is aluminum (A
1).
このＥＬパネルの製造工程においてＥＬ発光層１５は、
５００℃程度で熱処理されるが、このとき透明電極１２
と絶縁層１３が接触した構造では透明電極の組成が変化
し抵抗値が数１０倍に増加してしまう。In the manufacturing process of this EL panel, the EL light emitting layer 15 is
The transparent electrode 12 is heat treated at about 500°C.
In a structure in which the transparent electrode and the insulating layer 13 are in contact with each other, the composition of the transparent electrode changes and the resistance value increases several tens of times.
この原因は絶縁層材料のＴａ２０５中には酸素の欠陥が
多く、前記熱処理によって透明電極材料のＩＴＯから酸
素が拡散するためと考えられる。The reason for this is thought to be that there are many oxygen defects in Ta205, which is the insulating layer material, and oxygen is diffused from ITO, which is the transparent electrode material, by the heat treatment.
そこでこの酸素拡散を阻止するため、前記透明電極と絶
縁層との間に二酸化シリコン（Ｓｉ０２）を挿入したパ
ネル構造が提案されている。In order to prevent this oxygen diffusion, a panel structure has been proposed in which silicon dioxide (Si02) is inserted between the transparent electrode and the insulating layer.
ところが前記透明電極と絶縁間にＳｉＯ２を介在させた
パネルにおいては、ＳｉＯ２が０．０５μｍ程度の場合
でも約２０Ｖの電圧を消費するため低電圧化に際して不
利となる問題がある。However, in a panel in which SiO2 is interposed between the transparent electrode and the insulation, a voltage of about 20 V is consumed even when the SiO2 is about 0.05 μm, which is disadvantageous when lowering the voltage.
この発明は、以上のような従来の状況から、ＥＬ発光層
の形成時に透明電極材料のＩＴＯが酸素拡散を起こさな
い構造の薄膜ＥＬパネルを提供することを目的とする。In view of the conventional situation as described above, an object of the present invention is to provide a thin film EL panel having a structure in which ITO, which is a transparent electrode material, does not cause oxygen diffusion during formation of an EL light emitting layer.
［問題点を解決するための手段〕
この発明では前記問題点を解決するため、第１図に示す
ようにＩＴＯの透明電極１２とＴａ２０５の絶縁層１３
との間に、該電極材料のＩＴＯよりも酸素濃度の高い、
つまり酸素含有量の多い透明導電薄膜２１を設けている
。[Means for Solving the Problems] In order to solve the above-mentioned problems, the present invention has a transparent electrode 12 made of ITO and an insulating layer 13 made of Ta205, as shown in FIG.
with a higher oxygen concentration than the ITO of the electrode material,
In other words, a transparent conductive thin film 21 with a high oxygen content is provided.
前記透明電極１２と絶縁層１３間に介在された酸素過多
の透明導電薄膜２１は、ＥＬ発光層形成時の熱処理工程
でＴａ２０５の絶縁層１３に対し酸素を拡散するが、そ
の拡散は透明導電薄膜自身の酸素含有量を最適値に近づ
けることになり、したがって抵抗値を下げることになる
。この反応は透明導電薄膜と絶縁層の界面近くから生し
、ＩＴＯの透明電極１２まで及ぶことはない。したがっ
て、透明電極１２の組成が変化し抵抗値が増加すること
は防止される。The oxygen-enriched transparent conductive thin film 21 interposed between the transparent electrode 12 and the insulating layer 13 diffuses oxygen into the Ta205 insulating layer 13 during the heat treatment process during the formation of the EL light emitting layer, but this diffusion is caused by the transparent conductive thin film 21 interposed between the transparent electrode 12 and the insulating layer 13. It will bring its own oxygen content closer to the optimum value, thus lowering its resistance value. This reaction occurs near the interface between the transparent conductive thin film and the insulating layer, and does not reach the ITO transparent electrode 12. Therefore, the composition of the transparent electrode 12 is prevented from changing and the resistance value from increasing.
なお前記透明導電薄膜２１の抵抗値は、依然として透明
電極１２のそれよりも大きいが、該透明電極が正常であ
れば何ら問題はない。Although the resistance value of the transparent conductive thin film 21 is still higher than that of the transparent electrode 12, there is no problem as long as the transparent electrode is normal.
以下、この発明の好ましい実施例につき図面を参照して
詳細に説明する。Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.
第１図は本実施例によるパネル構造の断面図を示すが、
前記第３図の従来パネルと同一部分には同一符号を記し
ている。この図において２１は酸素含有量が最適イ直よ
りも多いＩＴＯからなる透明導電薄膜である。なお透明
電極１２に用いているＩＴＯは、酸素含有量が最適値に
設定されている。FIG. 1 shows a cross-sectional view of the panel structure according to this embodiment.
The same parts as those of the conventional panel shown in FIG. 3 are designated by the same reference numerals. In this figure, 21 is a transparent conductive thin film made of ITO whose oxygen content is higher than the optimum value. Note that the oxygen content of ITO used for the transparent electrode 12 is set to an optimum value.
このような薄膜ＥＬパネルの製造工程の一例を以下に説
明する。An example of the manufacturing process for such a thin film EL panel will be described below.
まずガラス基板１１上に透明電極１２としてＩＴＯを０
．２μｍ形成する。この薄膜はＩｎ−３ｎ合金をターゲ
ットとし、Ａｒと０２の混合ガス雰囲気で反応スパッタ
により形成される。First, ITO was placed on a glass substrate 11 as a transparent electrode 12.
．． Form 2 μm. This thin film is formed by reactive sputtering using an In-3n alloy as a target in a mixed gas atmosphere of Ar and 02.
次に透明電極１２上に膜厚０．０５μｍの酸素過多のｒ
Ｔｏ薄膜２１を形成する。この薄膜は、透明電極形成よ
りも酸素分圧が２倍のＡｒ、０２の混合ガス雲間４気で
スパッタリング形成される。したがって、ＩＴＯ薄膜２
１の酸素含有量は最適値を超過する。Next, on the transparent electrode 12, an oxygen-rich layer with a film thickness of 0.05 μm was applied.
A To thin film 21 is formed. This thin film is formed by sputtering between clouds of a mixed gas of Ar and 02 gas having an oxygen partial pressure twice that of that used for forming the transparent electrode. Therefore, ITO thin film 2
The oxygen content of 1 exceeds the optimum value.
次に酸素過多のＩＴＯ薄膜（透明導電薄膜）２１上に絶
縁層１３としてＴａ２０５を０，２５μｍ形成する。こ
の薄膜は、透明電極形成と同しＡｒと０２の混合ガス雰
囲気でＴａ２０５のセラミッククーゲットをスバ・ツタ
することにより形成される。Next, Ta205 is formed to a thickness of 0.25 μm as an insulating layer 13 on the oxygen-rich ITO thin film (transparent conductive thin film) 21. This thin film is formed by rolling a Ta205 ceramic coupette in the same Ar and O2 mixed gas atmosphere as in the formation of the transparent electrode.
次に絶縁層１３の上にＺｎＳ：Ｍｎを電子ビーム加熱に
より０．５μｍ被着形成した後、真空中でｌ時間５００
℃の温度にて加熱処理し、ＥＬ発光層１５を形成する。Next, ZnS:Mn was deposited to a thickness of 0.5 μm on the insulating layer 13 by electron beam heating, and then heated in a vacuum for 500 hours.
A heat treatment is performed at a temperature of .degree. C. to form an EL light emitting layer 15.
次にＥＬ発光層１５上に前記絶縁層１３と同様なＴａ２
０５の絶縁層１４を形成する。Next, Ta2 similar to the insulating layer 13 is placed on the EL light emitting layer 15.
05 is formed.
そして最後に絶縁層１４の上に背面電極１６としてＡＩ
を蒸着により０．３μｍ形成する。Finally, on the insulating layer 14, an AI layer is formed as a back electrode 16.
is formed to a thickness of 0.3 μm by vapor deposition.
以上この発明の一実施例について説明したが、これに限
らず例えば透明導電薄膜２１の材料として酸化インジウ
ム、または酸化スズ、または酸化亜鉛が使用可能である
。Although one embodiment of the present invention has been described above, the present invention is not limited thereto, and for example, indium oxide, tin oxide, or zinc oxide can be used as the material for the transparent conductive thin film 21.
以上説明したようにこの発明は、ＩＴＯの透明電極とＴ
ａ２０５の絶縁層との間に、該透明電極材料よりも酸素
濃度の高い透明導電薄膜を介在させたことにより、５ｉ
０２などの絶縁膜を用いずに前記透明電極の抵抗値増加
を防止することができるため一層低電圧駆動の可能なＥ
Ｌパネルを得ることができる。As explained above, the present invention utilizes an ITO transparent electrode and a T
By interposing a transparent conductive thin film with a higher oxygen concentration than the transparent electrode material between the a205 insulating layer, the 5i
Since it is possible to prevent an increase in the resistance value of the transparent electrode without using an insulating film such as E02, it is possible to drive at a lower voltage.
L panel can be obtained.
第１図はこの発明の主要構成を示す断面図、第２図はこ
の発明の一実施例による薄膜ＥＬパネルの断面図、
第３図は従来の薄膜ＥＬパネルの断面図である。
第１図、第２図において、
１１はガラス基板、
１２は透明電極、
１３および１４は１色縁層、
１５はＥＬ発光層、
１６は背面電極、
２１は透明導電薄膜をそれぞれ示す。
卆斉し日月の ヱ」ｒ禍方９胆
第１図
Ａζイを日月の メし冴ａ勺り図
第２ 図
従来め巳しパネル構甚刀
第３図FIG. 1 is a sectional view showing the main structure of the present invention, FIG. 2 is a sectional view of a thin film EL panel according to an embodiment of the invention, and FIG. 3 is a sectional view of a conventional thin film EL panel. 1 and 2, 11 is a glass substrate, 12 is a transparent electrode, 13 and 14 are one-color edge layers, 15 is an EL light emitting layer, 16 is a back electrode, and 21 is a transparent conductive thin film. The sun and the moon are united. Figure 1. The image of the sun and the moon. Figure 2. Conventional layout of the panel. Figure 3.
Claims (2)
ＥＬ発光層（１５）との間に五酸化タンタルの絶縁層（
１３）を有したＥＬパネル構成において、前記透明電極
（１２）と絶縁層（１３）との間に、該透明電極材料よ
りも酸素濃度の高い透明導電薄膜（２１）を設けたこと
を特徴とする薄膜ＥＬパネル。(1) An insulating layer of tantalum pentoxide (
13), a transparent conductive thin film (21) having a higher oxygen concentration than the transparent electrode material is provided between the transparent electrode (12) and the insulating layer (13). Thin film EL panel.
値よりも多い酸化インジウムスズからなることを特徴と
する特許請求の範囲第（１）項記載の薄膜ＥＬパネル。(2) The thin film EL panel according to claim (1), wherein the transparent conductive thin film (21) is made of indium tin oxide with an oxygen content higher than an optimum value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61135199A JPS62291896A (en) | 1986-06-10 | 1986-06-10 | Thin film el panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61135199A JPS62291896A (en) | 1986-06-10 | 1986-06-10 | Thin film el panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62291896A true JPS62291896A (en) | 1987-12-18 |
Family
ID=15146162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61135199A Pending JPS62291896A (en) | 1986-06-10 | 1986-06-10 | Thin film el panel |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62291896A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0230094A (en) * | 1988-07-19 | 1990-01-31 | Yokogawa Electric Corp | Thin film el element |
| JPH0279392A (en) * | 1988-09-16 | 1990-03-19 | Stanley Electric Co Ltd | El luminous element |
| JPH0589964A (en) * | 1991-09-27 | 1993-04-09 | Sharp Corp | Transparent electrode |
-
1986
- 1986-06-10 JP JP61135199A patent/JPS62291896A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0230094A (en) * | 1988-07-19 | 1990-01-31 | Yokogawa Electric Corp | Thin film el element |
| JPH0279392A (en) * | 1988-09-16 | 1990-03-19 | Stanley Electric Co Ltd | El luminous element |
| JPH0544159B2 (en) * | 1988-09-16 | 1993-07-05 | Stanley Electric Co Ltd | |
| JPH0589964A (en) * | 1991-09-27 | 1993-04-09 | Sharp Corp | Transparent electrode |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5445899A (en) | Color thin film electroluminescent display | |
| US4748375A (en) | Stable optically transmissive conductors, including electrodes for electroluminescent devices, and methods for making | |
| JPS62291896A (en) | Thin film el panel | |
| JPH06104089A (en) | Thin film light emitting element | |
| US4880475A (en) | Method for making stable optically transmissive conductors, including electrodes for electroluminescent devices | |
| US4693906A (en) | Dielectric for electroluminescent devices, and methods for making | |
| US4734618A (en) | Electroluminescent panel comprising a layer of silicon between a transparent electrode and a dielectric layer and a method of making the same | |
| JPH0714678A (en) | El element | |
| US4683044A (en) | Method of manufacturing an electroluminescent panel without any adverse influence on an underlying layer | |
| JPS63224192A (en) | Thin film el panel | |
| JPS63224188A (en) | Method of forming ferrodielectric thin film | |
| JP2686170B2 (en) | Thin film EL element | |
| JPH0769531B2 (en) | Method for producing transparent conductive film having insulating protective film | |
| JPS6081799A (en) | Method of producing electrode | |
| JPH02306583A (en) | Manufacture of thin film electroluminescence element | |
| JP2679322B2 (en) | Method for manufacturing double insulating thin film electroluminescent device | |
| JPS6345797A (en) | Thin film light emitting device | |
| JPS622496A (en) | Thin film el element | |
| JPS622495A (en) | Manufacture of thin film el element | |
| JP2517629B2 (en) | Thin film EL panel | |
| JPS63224187A (en) | Method of forming ferrodielectric thin film | |
| JPS63170813A (en) | Formation of transparent conductive film | |
| KR930005763B1 (en) | Thin film el element | |
| JPH0218895A (en) | Thin film type el element | |
| JPH01204394A (en) | Thin film el element |