JPS62291189A - He-ne gas laser apparatus - Google Patents
He-ne gas laser apparatusInfo
- Publication number
- JPS62291189A JPS62291189A JP13667286A JP13667286A JPS62291189A JP S62291189 A JPS62291189 A JP S62291189A JP 13667286 A JP13667286 A JP 13667286A JP 13667286 A JP13667286 A JP 13667286A JP S62291189 A JPS62291189 A JP S62291189A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- output
- output value
- receiving element
- gas laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000010355 oscillation Effects 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229910001374 Invar Inorganic materials 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/131—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
- H01S3/134—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation in gas lasers
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
発明の詳細な説明
〔産業上の利用分野〕
本発明はHe −N eガスレーザ装置に関し、特にレ
ーザ出力の安定化する構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a He--Ne gas laser device, and particularly to a structure for stabilizing laser output.
従来、この種のHe−Neガスレーザ装置は、ガスレー
ザ管と、このガスレーザ管を保持固定するための筐体と
、電源とから成り、周囲温度変化等の環境変化によるレ
ーザ出力の変動を抑えるために、前述した筐体に熱的膨
張係数の低いインバー等の材料を用いて構成していた。Conventionally, this type of He-Ne gas laser device consists of a gas laser tube, a casing for holding and fixing the gas laser tube, and a power source.In order to suppress fluctuations in laser output due to environmental changes such as changes in ambient temperature, The above-mentioned casing was constructed using a material such as Invar, which has a low coefficient of thermal expansion.
上述した従来のHe−Neガスレーザ装置では、周囲温
度変化等の環境変化によるミラーの調整ズレに起因する
レーザ出力の変動を抑えるため、環境変化によるミラー
調整ズレを小さく抑える目的でレーザ管を保持固定する
筐体に低熱膨張係数の材料を使用していた。しかし、こ
のような構成だけではレーザ出力の変化を小さく抑えら
れる温度範囲は狭く、また、外部から不要な力が筐体に
加えられミラー調整が相当ずれた場合には、これによる
レーザ出力変化を抑えることは全く不可能であり、高い
出力安定性を必要とする用途には使用出来ない等の欠点
があった。In the conventional He-Ne gas laser device described above, the laser tube is held and fixed in order to suppress fluctuations in laser output caused by misalignment of the mirror due to environmental changes such as changes in ambient temperature. A material with a low coefficient of thermal expansion was used for the housing. However, with this configuration alone, the temperature range in which changes in laser output can be suppressed is narrow, and if unnecessary force is applied to the housing from the outside and the mirror adjustment shifts considerably, it is difficult to suppress the change in laser output due to this. It is completely impossible to suppress this, and there are drawbacks such as the fact that it cannot be used in applications that require high output stability.
本発明は、ガスレーザ管と、このガスレーザ管を保持す
る筐体と、電源とを有するH e −N eガスレーザ
装置において、ガスレーザ管の細管部にソレノイドコイ
ルを取付け、レーザ光の一部を反射するためのビームス
ピリツタと、このビームスピリツタにより反射されたレ
ーザ光を受光するための受光素子と、受光素子からの信
号によりソレノイドコイルに流す電流を制御する制御回
路を電源内に設けたことを特徴とする。The present invention provides a He-Ne gas laser device that includes a gas laser tube, a housing for holding the gas laser tube, and a power source, in which a solenoid coil is attached to a narrow tube portion of the gas laser tube to reflect a portion of the laser beam. The power source is equipped with a beam spiriter, a light-receiving element for receiving the laser light reflected by the beam spiriter, and a control circuit that controls the current flowing through the solenoid coil based on the signal from the light-receiving element. Features.
次に図面を用いて本発明を説明する。 Next, the present invention will be explained using the drawings.
第1図に本発明の一実施例の概略図を示す。第1図にお
いて、1はレーザ管、2はAf製等の筐体、3は電源、
4はレーザ光、5はビームスピリツタ、6.7はビーム
スピリツタ5により透過及び反射したレーザ光、8はレ
ーザ光7を受光する太陽電池等の受光素子、9はレーザ
管1の放電部即ち細管部にまかれたソレノイドコイル、
10は受光素子8の出力信号により、ソレノイドコイル
9に流す電流を制御する電源内部に配置された制御回路
で、たとえば、Arレーザ等で放電電流により出力値を
制御するために一般に使用されているものと同じ制御回
路であり、これらによりHe−Neガスレーザ装置が構
成されている。FIG. 1 shows a schematic diagram of an embodiment of the present invention. In Fig. 1, 1 is a laser tube, 2 is a housing made of Af, etc., 3 is a power supply,
4 is a laser beam, 5 is a beam spiriter, 6.7 is a laser beam transmitted and reflected by the beam spiriter 5, 8 is a light receiving element such as a solar cell that receives the laser beam 7, 9 is a discharge part of the laser tube 1 In other words, the solenoid coil wound around the thin tube part,
Reference numeral 10 denotes a control circuit disposed inside the power supply that controls the current flowing through the solenoid coil 9 based on the output signal of the light receiving element 8, and is generally used, for example, to control the output value using the discharge current in Ar lasers, etc. This is the same control circuit as the one above, and these constitute the He-Ne gas laser device.
本発明のHe−Neガスレーザ装置の動作について説明
する。He−Neガスレーザにおいては、632.8o
mと3.39μmの発振は競合発振特性を有することが
知られており、この中で3゜39μmの発振は印加磁界
強度に依存することが知られている。したがって、細管
部に取付けたソレノイドコイル9に電流を流し磁界を印
加すると、印加磁界強度の強弱に応じて3.39μmの
発振が変化し、632.8om波長の出力値は第2図に
示されるように変化する。本発明ではこの現像を利用し
て632.8omのレーザ出力を安定化する。いま、レ
ーザ出力値が何らかの原因で変動した場合、その変動を
ビームスピリツタ5と受光素子8とで検出し、たとえば
、レーザ出力が規定値より低下した場合は、規定出力値
となるようにソレノイドコイル9に流す電流を第2図に
示す通常の動作ポインl−Pに対応する値Ipより増加
させることにより磁界強度を増加させ出力値を上昇させ
る。また逆に出力が増加した場合には、逆に電流をIp
より減少させ、規定出力値に下降させるよう制御し、出
力値を一定に保つことができる。The operation of the He-Ne gas laser device of the present invention will be explained. For He-Ne gas laser, 632.8o
It is known that the oscillations at 3.39 μm and 3.39 μm have competitive oscillation characteristics, and among these, the oscillation at 3.39 μm is known to depend on the strength of the applied magnetic field. Therefore, when a current is applied to the solenoid coil 9 attached to the thin tube and a magnetic field is applied, the 3.39 μm oscillation changes depending on the strength of the applied magnetic field, and the output value at the 632.8 ohm wavelength is shown in Figure 2. It changes like this. In the present invention, this development is utilized to stabilize the laser output of 632.8 ohm. Now, if the laser output value fluctuates for some reason, the fluctuation is detected by the beam spiriter 5 and the light receiving element 8. For example, if the laser output drops below the specified value, the solenoid is activated to maintain the specified output value. By increasing the current flowing through the coil 9 from a value Ip corresponding to the normal operating point l-P shown in FIG. 2, the magnetic field strength is increased and the output value is increased. Conversely, when the output increases, the current Ip
The output value can be kept constant by controlling the output value to decrease to a specified output value.
なお、上記実施例として、内部ミラー型レーザ管の例を
示したが、レーザ管としては、外部ミラーレーザ管でも
よいことは明らがであり、本実施例が本発明を制限する
ものではない。Although an example of an internal mirror type laser tube is shown in the above embodiment, it is clear that an external mirror laser tube may be used as the laser tube, and this embodiment does not limit the present invention. .
このように本発明によるHe−Neガスレーザ装置にお
いては、広範におよぶ周囲温度変化等の環境変化により
起るレーザ出力の変動、さらには筐体に不要な力が加わ
った場合に生じるレーザ出力変化をも防止でき、常に一
定の出力値を容易に得ることができる利点を有する。As described above, the He-Ne gas laser device according to the present invention can suppress fluctuations in laser output caused by environmental changes such as wide-ranging changes in ambient temperature, as well as changes in laser output that occur when unnecessary force is applied to the housing. It also has the advantage of being able to easily obtain a constant output value.
第1図は本発明の一実施例の概略図、第2図はHe−N
eガスレーザにおける632.8om波長のレーザ出力
値とソレノイド電流との関係を示す図である。
図において、1はレーザ管、2は筐体、3は電源、4は
レーザ光、5はビームスピリツタ、6は透過レーザ光、
7は反射レーザ光、8は受光素子、9はソレノイドコイ
ル、1oは制御回路。
=6−Figure 1 is a schematic diagram of one embodiment of the present invention, Figure 2 is a He-N
It is a figure which shows the relationship between the laser output value of 632.8 om wavelength, and a solenoid current in an e-gas laser. In the figure, 1 is a laser tube, 2 is a housing, 3 is a power supply, 4 is a laser beam, 5 is a beam spiriter, 6 is a transmitted laser beam,
7 is a reflected laser beam, 8 is a light receiving element, 9 is a solenoid coil, and 1o is a control circuit. =6-
Claims (1)
源とを有するHe−Neガスレーザ装置において、前記
ガスレーザ管の細管部にコイルを取付け、レーザ光の一
部を分離するビームスピリッタと、該ビームスピリッタ
により分離されたレーザ光を受光する受光素子と、該受
光素子の信号によりソレノイドコイルに流す電流を制御
する制御回路を設けたことを特徴とするHe−Neガス
レーザ装置。In a He-Ne gas laser device having a gas laser tube, a housing for holding the gas laser tube, and a power source, a beam splitter is provided that attaches a coil to a thin tube part of the gas laser tube to separate a part of the laser beam; A He-Ne gas laser device comprising: a light receiving element that receives laser light separated by a beam splitter; and a control circuit that controls a current flowing through a solenoid coil based on a signal from the light receiving element.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13667286A JPS62291189A (en) | 1986-06-11 | 1986-06-11 | He-ne gas laser apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13667286A JPS62291189A (en) | 1986-06-11 | 1986-06-11 | He-ne gas laser apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62291189A true JPS62291189A (en) | 1987-12-17 |
Family
ID=15180777
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13667286A Pending JPS62291189A (en) | 1986-06-11 | 1986-06-11 | He-ne gas laser apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62291189A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0360085A (en) * | 1989-07-27 | 1991-03-15 | Nec Corp | Ion laser device |
JPH0537056A (en) * | 1991-07-29 | 1993-02-12 | Toshiba Corp | Gas laser oscillator |
-
1986
- 1986-06-11 JP JP13667286A patent/JPS62291189A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0360085A (en) * | 1989-07-27 | 1991-03-15 | Nec Corp | Ion laser device |
JPH0537056A (en) * | 1991-07-29 | 1993-02-12 | Toshiba Corp | Gas laser oscillator |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7218655B2 (en) | Solid state laser insensitive to temperature changes | |
US4848881A (en) | Variable lens and birefringence compensator | |
JPH03214682A (en) | Laser | |
JPH0348480A (en) | Light feedback type light-emitting device | |
JPS62291189A (en) | He-ne gas laser apparatus | |
US5889803A (en) | Resonator for electromagnetic waves with a stabilizer and method for stabilizing the length of the resonator | |
JPS63280483A (en) | Light source for exposure device | |
US3639855A (en) | Laser devices | |
WO1986003601A1 (en) | Variable lens and birefringence compensator for continuous operation | |
US5978392A (en) | Wavelength-conversion laser | |
US4488304A (en) | Stem for semiconductor laser devices | |
EP0430238B1 (en) | Fiber optic receiving circuit for converting an optical signal to an electric signal | |
US5054923A (en) | Fiber optic gyro using a pulsed light source | |
JPH0122997B2 (en) | ||
JPS60117694A (en) | Light frequency stabilizing device | |
JPS59140B2 (en) | semiconductor laser equipment | |
JPH04320385A (en) | Semiconductor laser temperature control system | |
JPH0159751B2 (en) | ||
JP2000228552A (en) | Solid-state laser device | |
JPH0532917B2 (en) | ||
JPH11177178A (en) | Semiconductor laser module | |
JPS6028290A (en) | Argon gas laser | |
JPH0385779A (en) | Laser oscillator | |
JPS5837712B2 (en) | Kitai laser touch | |
JPH03135088A (en) | Semiconductor laser beam width constriction apparatus |