JPS62285454A - Plating treatment equipment - Google Patents
Plating treatment equipmentInfo
- Publication number
- JPS62285454A JPS62285454A JP12859186A JP12859186A JPS62285454A JP S62285454 A JPS62285454 A JP S62285454A JP 12859186 A JP12859186 A JP 12859186A JP 12859186 A JP12859186 A JP 12859186A JP S62285454 A JPS62285454 A JP S62285454A
- Authority
- JP
- Japan
- Prior art keywords
- magazine
- plating
- tank
- frame
- frames
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007747 plating Methods 0.000 title claims abstract description 70
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 238000009713 electroplating Methods 0.000 claims description 9
- 239000012212 insulator Substances 0.000 abstract description 9
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Electroplating Methods And Accessories (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
3、発明の詳細な説明
〔産業上の利用分野〕
この発明はめっき処理装置に関し、特に半導体装置のリ
ードフレームを電気めっきする装置の自動化と小型化を
図ったものに関するものである。[Detailed Description of the Invention] 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a plating processing apparatus, and particularly relates to an apparatus for automating and miniaturizing an apparatus for electroplating lead frames of semiconductor devices. It is something.
一般に絶縁封止形半導体パッケージの外部リードには耐
食性、はんだ付は性等の向上を目的として、はんだ、錫
、銀、金などの表面被覆処理が施されている。この表面
処理の方法としては、主に電気めっき方式と溶融はんだ
浸漬方式が用いられているが、製品の安定性、量産性等
の理由により電気めっき方式が主流となっている。In general, the external leads of an insulated sealed semiconductor package are coated with a surface coating such as solder, tin, silver, or gold for the purpose of improving corrosion resistance and soldering properties. As methods for this surface treatment, electroplating and molten solder immersion are mainly used, but electroplating has become mainstream for reasons such as product stability and mass productivity.
次に従来の電気めっき方式の一例を第6図ないし第8図
を用いて説明する。Next, an example of a conventional electroplating method will be explained with reference to FIGS. 6 to 8.
第6図は電気めっきを施すためのめっき槽の模式図であ
る。第6図において、めっき槽2の内部にはめっき液1
が満たされ、酸槽2の両サイドには可溶性陽極としての
金属板7が配置されている。FIG. 6 is a schematic diagram of a plating bath for electroplating. In FIG. 6, the plating solution 1 is inside the plating tank 2.
is filled, and metal plates 7 as soluble anodes are arranged on both sides of the acid tank 2.
第7図はめっき槽の中でめっき処理を施すフレームを吊
すランクを示し、該ラック16には複数枚のリードフレ
ームがいちどに処理できるようフレ−ムを引っ掛けるた
めの多数のフック15が設けられている。また、めっき
処理中上記リードフレームは上記フック15を介して陰
極としての導通がとられる。また、めっきはめっき槽2
中の可溶性金属板7を陽極、ラック16側を陰極として
、めっき槽2中にフレームを引っ掛けたフック16を浸
漬し、両極の間に直流電流を流すことにより行なわれる
。このようにして一定時間のめっきを施されたラックは
めっき槽より取出され、水洗。FIG. 7 shows a rank for hanging frames to be plated in a plating tank, and the rack 16 is provided with a number of hooks 15 for hanging frames so that a plurality of lead frames can be processed at once. There is. Further, during the plating process, the lead frame is electrically connected as a cathode via the hook 15. Also, plating is done in plating tank 2.
This is carried out by immersing the hook 16 on which the frame is hooked into the plating tank 2, using the soluble metal plate 7 inside as the anode and the rack 16 side as the cathode, and passing a direct current between the two poles. After being plated for a certain period of time in this way, the racks are taken out of the plating tank and washed with water.
乾燥を施される。It is dried.
従来のめっき処理装置は以上の様に構成されているので
、リードフレームのラックからの着脱は人手によらなけ
ればならず、また半導体組立装置のほとんどが自動化さ
れている中にあって従来装置は人手の介在必要とるため
、その前後のプロセスを含む処理装置を連結し、−貫化
することができないという問題があった。まためっき処
理に際しては、ランクに引っ掛けた状態のフレームと可
溶性陽極とを対向される必要があるため処理数を増加さ
せるには単一のラックに引っ掛けるフレームの数を多く
する必要があり、それに伴ない可溶性陽極やめっき槽が
大型化するという問題もあった。Conventional plating processing equipment is configured as described above, and therefore the lead frame must be manually attached and removed from the rack.Also, while most semiconductor assembly equipment is automated, conventional equipment is Since this requires manual intervention, there is a problem in that it is not possible to connect and integrate processing equipment including processes before and after the process. In addition, during plating processing, the frame hooked on the rack and the soluble anode need to face each other, so in order to increase the number of plating processes, it is necessary to increase the number of frames hooked on a single rack. There was also the problem that the soluble anode and the plating tank became large.
この発明は上記の様な問題点を解決するためになされた
もので、小型化された完全自動のめっき処理装置を得る
ことを目的とする。This invention was made to solve the above-mentioned problems, and its purpose is to obtain a downsized, fully automatic plating processing apparatus.
この発明に係るめっき処理装置は、整列され密着した状
態の複数の絶縁封止形半導体パッケージを収納するマガ
ジンと、めっき槽中に設置され、上記マガジンをその上
に乗せることによりめっき処理するフレームと外部電源
との導通を取るカソード電極棒と、めっき槽底面上に設
けられたアノードを掻板と、上記マガジンの上下に側壁
に沿って設けられた垂直な遮蔽壁とを備えたものである
。A plating processing apparatus according to the present invention includes a magazine that stores a plurality of insulated sealed semiconductor packages arranged in close contact with each other, and a frame that is installed in a plating tank and performs plating by placing the magazine on top of the magazine. It is equipped with a cathode electrode rod for establishing conduction with an external power source, an anode scraping plate provided on the bottom surface of the plating tank, and vertical shielding walls provided above and below the magazine along the side walls.
この発明においては、整列された密着した状態の複数の
絶縁封止形半導体パッケージを収納するマガジンと、め
っき槽中に設置され、上記マガジンをその上に乗せるこ
とによりリードフレームと外部電源との導通を取るカソ
ード電極棒と、めっき槽底面上に設けられたアノード電
極板と、上記マガジンの上下に側壁に沿って設けられた
;#≠#垂直な遮蔽壁とを備えたから、マガジンを単位
としてめっき処理を行なうことができ、マガジンからの
リードフレームの出し入れは容易に自動化可能となり、
しかもラック方式に比ベマガジン方式の方がコンパクト
なため装置全体の小型化が図れる。また、上記遮蔽壁に
よりめっき膜厚を均一化でき、ラック方式と同等もしく
はそれ以上の品質が得られる。In this invention, there is provided a magazine for storing a plurality of insulated sealed semiconductor packages arranged in close contact with each other, and the magazine is installed in a plating bath, and by placing the magazine on top of the magazine, conduction is established between the lead frame and an external power source. It is equipped with a cathode electrode rod for removing the plating, an anode electrode plate provided on the bottom of the plating tank, and vertical shielding walls provided along the side walls above and below the magazine, so that plating can be performed using the magazine as a unit. The loading and unloading of lead frames from magazines can be easily automated.
Furthermore, since the magazine system is more compact than the rack system, the entire device can be made smaller. Further, the shielding wall allows the plating film thickness to be made uniform, and quality equivalent to or better than that of the rack method can be obtained.
以下この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第1図は本発明の一実施例によるめっき装置の全体構成
を、第2図は半導体素子対正体とリードフレームとが一
体化している半導体装置をマガジンに収納した状態を模
式的に示し、図において、2は電気めっき液1を満たし
ためっき処理槽、3は該めっき処理槽2中に配置され側
壁が絶縁体からなるマガジンであり、該マガジン3には
100枚のフレームが封止パッケージ同志が密着した状
態で整列収納されている。4は該半導体装置IOのフレ
ームの接触する部分のみが露出し、他の部分が絶縁体で
被覆されたカソード電極棒であり、これは上記めっき槽
2中に2本手行に設置されている。またマガジン3の底
部にはフレームを1くための絶縁体からなるフレーム支
持環14が設けられており、めっき槽2の底部にはマガ
ジンと対向する位置に可溶性のアノード電極7が配置さ
れており、外部電源との導通がとられている。FIG. 1 shows the overall configuration of a plating apparatus according to an embodiment of the present invention, and FIG. 2 schematically shows a state in which a semiconductor device in which a semiconductor element pair body and a lead frame are integrated is housed in a magazine. , 2 is a plating tank filled with electroplating solution 1, 3 is a magazine placed in the plating tank 2 and whose side walls are made of an insulator, and the magazine 3 has 100 frames arranged in sealed packages. are stored in close alignment. Reference numeral 4 denotes cathode electrode rods in which only the portion that contacts the frame of the semiconductor device IO is exposed and the other portions are covered with an insulator, and these are installed in pairs in the plating bath 2 in parallel. . Further, a frame support ring 14 made of an insulator for mounting the frame is provided at the bottom of the magazine 3, and a soluble anode electrode 7 is arranged at the bottom of the plating tank 2 at a position facing the magazine. , continuity with the external power supply is established.
またカソード電極棒4は第3図に示すようにその上にマ
ガジンが置かれるとマガジンに収納されているフレーム
11を持ちあげる様に設計されているため、フレーム1
1とカソード電極棒4の金属露出部5が接触し、フレー
ム11と外部直流電源との導通をカソード電極棒4を介
して行なうことができる。なお、カソード電極棒4は1
本にして、他の1本はフレームを支えるだけの絶縁体と
してもよいが、フレームとの導通を確実にするためには
複数本にした方が良い。Furthermore, as shown in FIG. 3, the cathode electrode rod 4 is designed to lift up the frame 11 housed in the magazine when a magazine is placed on it, so that the frame 1
1 and the exposed metal portion 5 of the cathode electrode rod 4 come into contact with each other, and conduction between the frame 11 and an external DC power source can be established via the cathode electrode rod 4. In addition, the cathode electrode rod 4 is 1
The other one may be an insulator that only supports the frame, but it is better to use multiple insulators to ensure continuity with the frame.
上記めっき処理装置は上述のめっき槽2.めっき液1.
フレーム11を収納したマガジン3.カソード電極棒4
.及び可溶性アノード7から構成できアノードとカソー
ドを外部直流電源に接続し、電流を流すことによりフレ
ームのめっき処理は可能であるが、このような装置では
めっき膜厚のバラつきが大きい。The above-mentioned plating processing apparatus is the above-mentioned plating tank 2. Plating solution 1.
Magazine 3 containing frame 11. Cathode electrode rod 4
.. Although it is possible to plate the frame by connecting the anode and cathode to an external DC power source and passing a current through the anode and the soluble anode 7, such an apparatus has a large variation in the thickness of the plating film.
そこで本実施例ではめっき膜厚の均一化を図るため、マ
ガジンの上下にマガジンの内側のフレーム収納部と同一
寸法の内壁を持つ絶縁体からなる上側、下側垂直遮蔽板
8.9を設置している。この垂直遮蔽板8.9は垂直方
向に長いほどめっき膜厚の均一化に効果があるのでフレ
ーム内及びフレーム上下部分のめっき膜厚のバラつきを
考慮して寸法を決める必要があり、ここでは下側の垂直
遮蔽板9はマガジン下端から可溶性アノード7までの長
さとし、上側の垂直遮蔽板8はマガジン上端からめっき
液面までの距離の1/2の長さとしている。Therefore, in this example, in order to make the plating film thickness uniform, upper and lower vertical shielding plates 8.9 made of insulators are installed above and below the magazine and have inner walls of the same dimensions as the frame housing inside the magazine. ing. The longer this vertical shielding plate 8.9 is in the vertical direction, the more effective it is in making the plating film thickness uniform, so it is necessary to determine the dimensions by taking into account the variation in the plating film thickness within the frame and in the upper and lower parts of the frame. The vertical shielding plate 9 on the side has a length from the lower end of the magazine to the soluble anode 7, and the vertical shielding plate 8 on the upper side has a length half the distance from the upper end of the magazine to the plating solution level.
上記垂直遮蔽板の効果を明らかにするため、第4図、第
5図にマガジン端と中央に収納されたフレームについて
そのめっき膜厚分布データを示す。In order to clarify the effect of the vertical shielding plate, FIGS. 4 and 5 show plating film thickness distribution data for frames stored at the ends and center of the magazine.
図かられかるように垂直遮蔽板なしではマガジン端と中
央とでは収納されていたフレームのめっき膜厚差が大き
く、しかも1枚のフレームについても上側と下側とイめ
っき膜厚差が大きいのに対し、垂直遮蔽板を設けること
によりいずれのめっき膜厚差も小さくなっていることが
わかる。As can be seen from the figure, without the vertical shielding plate, there is a large difference in the plating film thickness between the magazine ends and the center, and even for a single frame, there is a large difference in plating film thickness between the upper and lower sides. On the other hand, it can be seen that by providing a vertical shielding plate, the difference in thickness of each plating film becomes smaller.
このように本実施例ではめっきの処理を、複数枚のフレ
ームをパッケージ同志が密着した状態で収納したマガジ
ンを単位として行なうようにしたので容易に自動化する
ことができ、またマガジンの寸法も本実施例と同一枚数
のフレームを処理する場合の従来装置に比べ115以下
となり、装置の小型化が図れる。またマガジン上下にマ
ガジン内側のフレーム収納部分と同じ形状の内壁を持つ
垂直な遮蔽板を設けたので、めっき膜厚のバラつきを抑
えてめっき被膜の信頼性を向上できる効果がある。In this way, in this example, the plating process is carried out in units of magazines in which multiple frames are housed in close contact with each other, making it easy to automate the plating process. Compared to the conventional device when processing the same number of frames as in the example, the number is 115 or less, and the device can be made smaller. In addition, vertical shielding plates with inner walls of the same shape as the frame storage area inside the magazine are provided above and below the magazine, which has the effect of suppressing variations in the plating film thickness and improving the reliability of the plating film.
なお、上記実施例ではマガジンの上下に垂直遮蔽板を設
けたが、マガジン自体を遮蔽板の高さを含むほど深くし
てもよく、上記実施例と同様の効果が得られる。In the above embodiment, vertical shielding plates are provided above and below the magazine, but the magazine itself may be deep enough to include the height of the shielding plate, and the same effect as in the above embodiment can be obtained.
また、上記実施例ではめっき処理工程についてのみ説明
したが水洗等の工程においてもマガジンにフレームを収
納したままで行えることは言うまでもない。Further, although only the plating process was explained in the above embodiment, it goes without saying that processes such as water washing can also be performed with the frame housed in the magazine.
以上の様に、この発明のめっき処理装置によれば、半導
体素子封止体とリードフレームとが一体化している半導
体装置を封止パッケージ同志が密着した状態で複数枚マ
ガジンに収納し該マガジンを単位としてめっき処理を行
なうようにしたので、マガジンからのリードフレームの
出し入れは容易に自動化可能となり、従来のような人手
によるリードフレームのラックへの着脱は不要となり、
しかもラック方式に比ベマガジン方式の方がコンパクト
なため装置全体の小型化が図れるという効果がある。As described above, according to the plating processing apparatus of the present invention, a plurality of semiconductor devices in which a semiconductor element encapsulation body and a lead frame are integrated are stored in a magazine with the encapsulation packages in close contact with each other, and the magazine is Since the plating process is performed as a unit, the loading and unloading of lead frames from the magazine can be easily automated, eliminating the need for manual loading and unloading of lead frames into racks as in the past.
Moreover, since the magazine system is more compact than the rack system, it has the effect of reducing the size of the entire device.
第1図はこの発明の一実施例によるめっき装置の全体構
成を示す斜視図、第2図は本発明のめっき処理用マガジ
ンに収納されたリードフレームの状態を示す模式図、第
3図は本発明のめっき処理用マガジンをカソード電極棒
上に設置した状態を゛示す模式図、第4図は本発明のマ
ガジンの上下に垂直遮蔽板を設けた場合のめっき膜厚分
布を示す図、第5図は本発明のマガジンの上下に垂直遮
蔽板を設けない場合のめっき膜厚分布を示す図、第6図
は従来のめっき処理装置のめっき処理槽の模式図、第7
図は従来のめっき処理用のラックを示す図、第8図は従
来のラックのフックにフレームをつるした状態を示す図
である。
図において、■は電気めっき液、2はめっき処理槽、3
はめっき処理用マガジン、4はカソード電極棒、5はカ
ソード電極棒の金属露出部、6はカソード電極棒の絶縁
被覆部、7は可溶性のアノード電極、8はマガジンの上
側垂直遮蔽板、9はマガジンの下側垂直遮蔽板、10は
半導体装置、llはリードフレーム、12は半導体素子
対正体、13はめっき処理用マガジンの絶縁体側壁、1
4はめっき処理用マガジン底部のフレーム支持棒である
。
なお図中同一符号は同−又は相当部分を示す。FIG. 1 is a perspective view showing the overall configuration of a plating apparatus according to an embodiment of the present invention, FIG. 2 is a schematic diagram showing the state of a lead frame stored in a plating magazine of the present invention, and FIG. FIG. 4 is a schematic diagram showing the state in which the plating magazine of the invention is installed on the cathode electrode rod. FIG. 4 is a diagram showing the plating film thickness distribution when vertical shielding plates are provided above and below the magazine of the invention. The figure shows the plating film thickness distribution when vertical shielding plates are not provided above and below the magazine of the present invention, Fig. 6 is a schematic diagram of the plating tank of the conventional plating processing equipment, and Fig. 7
This figure shows a conventional rack for plating processing, and FIG. 8 shows a state in which a frame is hung from the hook of the conventional rack. In the figure, ■ is the electroplating solution, 2 is the plating treatment tank, and 3 is the electroplating solution.
4 is a plating magazine, 4 is a cathode electrode, 5 is an exposed metal part of the cathode electrode, 6 is an insulating part of the cathode electrode, 7 is a soluble anode electrode, 8 is an upper vertical shielding plate of the magazine, 9 is a 1 is a lower vertical shielding plate of the magazine, 10 is a semiconductor device, 1 is a lead frame, 12 is a semiconductor element pair body, 13 is an insulator side wall of a magazine for plating processing, 1
4 is a frame support rod at the bottom of the plating magazine. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
ド電極板と、 上記めっき槽中の該アノード電極板上方に設けられ、外
部電源に接続されたカソード電極棒と、該カソード電極
棒上に載置され、整列されて互いに密着した複数の半導
体パッケージを格納するためのマガジンと、 該マガジンの底面と上記アノード電極板の間にマガジン
底面の周縁に沿って設けられた垂直な第1の遮蔽壁と、 該マガジン側壁上方に該側壁に沿って設けられた垂直な
第2の遮蔽壁とを備えたことを特徴とするめっき処理装
置。(1) A plating tank for storing an electroplating solution, an anode electrode plate provided on the bottom of the plating tank and connected to an external power source, and an anode electrode plate provided above the anode electrode plate in the plating tank and connected to an external power source. a magazine for storing a cathode electrode rod and a plurality of semiconductor packages placed on the cathode electrode rod, aligned and in close contact with each other; A plating processing apparatus comprising: a vertical first shielding wall; and a vertical second shielding wall provided above the magazine sidewall and along the sidewall.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12859186A JPS62285454A (en) | 1986-06-03 | 1986-06-03 | Plating treatment equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12859186A JPS62285454A (en) | 1986-06-03 | 1986-06-03 | Plating treatment equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62285454A true JPS62285454A (en) | 1987-12-11 |
Family
ID=14988543
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12859186A Pending JPS62285454A (en) | 1986-06-03 | 1986-06-03 | Plating treatment equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62285454A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5276760A (en) * | 1991-06-18 | 1994-01-04 | Olympus Optical Co., Ltd. | Optical device for photographing images formed from optical fiber bundles |
-
1986
- 1986-06-03 JP JP12859186A patent/JPS62285454A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5276760A (en) * | 1991-06-18 | 1994-01-04 | Olympus Optical Co., Ltd. | Optical device for photographing images formed from optical fiber bundles |
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