JPS62281761A - Control circuit for semiconductor device - Google Patents

Control circuit for semiconductor device

Info

Publication number
JPS62281761A
JPS62281761A JP12108986A JP12108986A JPS62281761A JP S62281761 A JPS62281761 A JP S62281761A JP 12108986 A JP12108986 A JP 12108986A JP 12108986 A JP12108986 A JP 12108986A JP S62281761 A JPS62281761 A JP S62281761A
Authority
JP
Japan
Prior art keywords
voltage
thyristor
semiconductor switch
current
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12108986A
Other languages
Japanese (ja)
Inventor
Shigeo Tomita
富田 滋男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12108986A priority Critical patent/JPS62281761A/en
Publication of JPS62281761A publication Critical patent/JPS62281761A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To dispense with resistors and eliminate overvoltage, by setting a semiconductor switch to be of a phase angle control system, and by increasing the current angle slowly to suppress rush current to a capairtor. CONSTITUTION:With AC voltage from terminals 1, 2, a condenser 20 is charged via a transformer 13, a diode bridge 14, and resistors 15, 20. when the charged voltage comes to the breakover voltage of a pulse element 19 or more, then the voltage flows to the gate of a thyristor 17 through the pulse element 19. Besides, the luminous diode 16 of a photocoupler 6 connected to the thyristor 17 in series is illuminated and is received by a photodetector 7, and a semiconductor switch 8 is put in a conductive state. As a result, the charged voltage flows to a smoothing condenser 12, and the then conduction angle of the switch 8 is set to be the same as that of the thyristor 17, and so the current flows in a narrow state and rush current is suppressed. when the potential of the condenser 12 is risen and comes to Zener voltage or more, then the thyristors 17, 8 are always set in an ON-state via a thyristor 25.

Description

【発明の詳細な説明】 3、発明の詳細な説明 〔産業上の利用分野〕 半導体整流装置1(特にスイッチングレギュレーター)
の電源投入時に生じる突入電流を押える半導体装置の制
御回路に関するものである。
[Detailed description of the invention] 3. Detailed description of the invention [Industrial application field] Semiconductor rectifier device 1 (especially switching regulator)
The present invention relates to a control circuit for a semiconductor device that suppresses inrush current that occurs when power is turned on.

〔従来の技術〕[Conventional technology]

従来の技術に、起動時のコンデンサーへの突入電流防止
策として、半導体スイッチに並列に抵抗器を接続してお
き、起動時、半導体スイッチ開となるまで抵抗を通しコ
ンデンサーへの光電を行ない、コンデンサーの電位が上
昇した時間層に半導体スイッチを閉とし、抵抗器に流れ
ていた電流を半導体スイッチに流しコンデンサーへの突
入゛電流を押えている。尚、この回路に関連し「スイッ
チングレギュレータの設計法とパワーデバイスの使い方
」新光社版が知られている。
In conventional technology, as a measure to prevent inrush current to the capacitor at startup, a resistor is connected in parallel to the semiconductor switch, and at startup, a photoelectric current is applied to the capacitor through the resistor until the semiconductor switch opens. The semiconductor switch is closed during the time period when the potential of In connection with this circuit, the Shinkosha edition of ``How to Design Switching Regulators and How to Use Power Devices'' is known.

従来の回路例を第2図に示す。まず第2図、従来回路に
おいて、端子1.2闇に商用周波の交流電圧が入力され
ると、抵抗4、ダイオ−ドブリッジ5全通して、平滑用
コ/デンサー6への光電々流が流れる。6の電位が決め
られた値に運するとトランジスタ11の駆動回路12が
動作し、トランジスタ11が決められた周波数でスイッ
チングを開始し、トラ/スフの巻i8.10に電圧が発
生する。巻線8に発生した電圧で、半導体スイッチ(ト
ライアック)3が、ドライブされ、2A通状態となる。
An example of a conventional circuit is shown in FIG. First, in Figure 2, in the conventional circuit, when a commercial frequency AC voltage is input to terminals 1 and 2, a photocurrent flows through the resistor 4 and diode bridge 5 to the smoothing capacitor 6. . When the potential of transistor 6 reaches a predetermined value, the drive circuit 12 of transistor 11 operates, transistor 11 starts switching at a predetermined frequency, and a voltage is generated in winding i8. The semiconductor switch (TRIAC) 3 is driven by the voltage generated in the winding 8, and becomes in a 2A conduction state.

この回路で、平滑用コンデ/ナー6ヘの突入電流に、抵
抗4により制限されるが、半導体スイッチ3が導通とな
るまで、抵抗4に電流が流れるためV2/Rの損失が発
生ずる。又、端子1.2に印加される交R,電EErI
、その投入位相が一定でないため、最悪90度位相で投
入されると、高いdv/dtが印加され、誤動作の原因
となる。
In this circuit, the inrush current to the smoothing condenser 6 is limited by the resistor 4, but the current flows through the resistor 4 until the semiconductor switch 3 becomes conductive, resulting in a loss of V2/R. In addition, AC R and EErI applied to terminal 1.2
Since the turning-on phase is not constant, if the turning-on phase is turned on at 90 degrees in the worst case, a high dv/dt will be applied, causing malfunction.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上記の従来技術で汀下記の問題点があった。 The above conventional techniques have the following problems.

(1)起動時の突入電流防止用抵抗器の容量が大きくナ
ル。w= V2/R,= 1kw短Rfjl’t’6ル
カ20 位い必要となる。
(1) The capacity of the resistor for preventing inrush current at startup is large and null. w = V2/R, = 1kw short Rfjl't'6 ruka 20 or so is required.

(2)挿入する抵抗器の種類、配電、配線方法により、
インダクタンス分と、接点のチャツタリングにより、i
A!圧や、過大d v/d t  の原因となる。(破
壊・誤点弧) り3)半導体スイッチの点弧電流を、スイッチングレキ
ュレータ一方式の場合、スイッチング周波数で電流から
直流に変換する変換トランスエフ得る場合が多く、スイ
ッチング周波数が低い場合は問題とならないが、周波数
が高くなると、点弧用を流のパルス巾が狭(なり、大き
な電流を必要とする。例えば、200KHzのスイッチ
ング周波数のものでに、半導体スイッチング素子のゲー
ト信号パルス巾としてr11μs程度しか確保出来ない
。素子のター717時間が1μs程度であり点弧ぎりぎ
ジのレベルとなりターンオフ時の拡りが悪くな9ホツト
スポツトの原因となる。
(2) Depending on the type of resistor inserted, power distribution, and wiring method,
Due to the inductance and contact chatter, i
A! This causes pressure and excessive d v/d t . (Destruction/erroneous firing) 3) In the case of a single-type switching regulator, the firing current of a semiconductor switch is often converted from current to DC at the switching frequency, resulting in a problem if the switching frequency is low. However, as the frequency increases, the pulse width of the ignition current becomes narrower and a larger current is required. For example, with a switching frequency of 200 KHz, the gate signal pulse width of the semiconductor switching element is r11 μs. The device's thermal time is about 1 .mu.s, which is on the verge of ignition and causes 9 hot spots with poor spread at turn-off.

これらの問題点を解決する目的で考えたのが、本発明で
ある。
The present invention was conceived to solve these problems.

〔問題点を解決するための手段〕[Means for solving problems]

前記の問題点を解決するために本発明で汀、(1)半導
体スイッチの点弧方式を、位相角制御方式とし、通流角
を徐々に小から大とし、コンデ7サーへの突入電流を押
える。通流角を徐々に変える方法に、平滑用コンデンサ
ーの電位変化を利用し制御する。これを行なうことによ
り、突入電流防止用抵抗器が不用となる。又過電圧や、
過大dv/dtの原因がなくなる。
In order to solve the above-mentioned problems, the present invention has the following features: (1) The ignition method of the semiconductor switch is a phase angle control method, the conduction angle is gradually increased from small to large, and the inrush current to the capacitor 7 is reduced. suppress. The method of gradually changing the conduction angle is controlled by using changes in the potential of the smoothing capacitor. By doing this, an inrush current prevention resistor becomes unnecessary. Also, overvoltage,
The cause of excessive dv/dt is eliminated.

(2)平滑用コンデンサーの電位がらるイ直に達すると
、半導体スイッチのゲート信号に直流的レベルの電流を
流子ようにした。
(2) When the potential of the smoothing capacitor reached a zero level, a DC level current was applied to the gate signal of the semiconductor switch.

〔実施例〕〔Example〕

以下、本発明の一実施例を第1図に示す。 An embodiment of the present invention is shown in FIG. 1 below.

第1図rr本発明の実施例でその動作に、端子1゜2に
商用周波の又流賦圧が入力されると、トランス13を介
しダイオードブリッジ14、抵抗器15.23を通して
、コンデンサー20が充電される。コンデンサー20の
充電々圧がパルスi子19のブレークオーバー電圧以上
になるとコンデ7サ−20のエネルギーがパルス素子】
9を通してサイリスタ17のゲートに流れる。抵抗23
、コンデンサー20で決する時定数を、サイリスタ17
が点弧する。位相角が太きく(逆に導通角が小ざ〈)な
るように設定しておくことにエリ、サイリスタ1フ0点
弧位相が大きなところで点弧し、サイリスタ17に直列
に接続されているホトカプラー6の発光ダイオード16
にt流が流れ発光する。その発光エネルギーを受光素子
7で受け、受光素子7が導通状態となる。受光素子7が
導通ずることにより、抵抗6を通し、半導体スイッチ8
が導通状態となり、コンデ7サ−12への光電流が流れ
る。この時の半導体スイッチの導通角に、サイリスタ1
7と同じとなるので、導通角が狭い状態で流れ、大きな
突入ilt流に押えられる。平滑コンデンサへの光電々
流により電位が上昇するか、その電位を利用し、抵抗器
22、ダイオード21を通じコンデンサー20光電する
ことにより、位相角が順次小ざくなり、逆に導通角が順
次大きくなり、ざらに平滑コンデンサー12の電位に上
昇し4T0 平滑コンデンサー12の電位が、ツェナーダイオード2
60ツエナー電圧以上になると、ツェナータイオード2
6を通してサイリスタ25のゲートに電流が流れるため
サイリスタ25にオン状態となり、平滑コンデンサー1
2のエネルギーζサイリスタ25、抵抗器24、発光ダ
イオード6、サイリスタ17へと流れ、サイリスタ17
には常に保持電流以上の′イ薦が流れ、常時オン状態、
発光ダイオードに、発光しっばなしの状、tとなる。
Fig. 1rr In the operation of the embodiment of the present invention, when a commercial frequency or current voltage is input to the terminals 1 and 2, the capacitor 20 is It will be charged. When the charging voltage of the capacitor 20 exceeds the breakover voltage of the pulse element 19, the energy of the capacitor 20 is transferred to the pulse element 19.]
9 to the gate of thyristor 17. resistance 23
, the time constant determined by the capacitor 20 is determined by the thyristor 17.
fires. It is advantageous to set the phase angle to be large (on the contrary, the conduction angle is small), so that thyristor 1 is fired when the 0 firing phase is large, and the photocoupler is connected in series to thyristor 17. 6 light emitting diodes 16
A t-current flows through and emits light. The light-emitting energy is received by the light-receiving element 7, and the light-receiving element 7 becomes conductive. When the light receiving element 7 becomes conductive, the semiconductor switch 8 passes through the resistor 6.
becomes conductive, and a photocurrent flows to the capacitor 7 and the capacitor 12. The conduction angle of the semiconductor switch at this time is the thyristor 1.
7, the flow flows with a narrow conduction angle and is suppressed by a large inrush ilt flow. By increasing the potential due to the photocurrent flowing to the smoothing capacitor, or by using that potential to photoelectrically conduct the capacitor 20 through the resistor 22 and the diode 21, the phase angle becomes smaller and the conduction angle becomes larger. , the potential of the smoothing capacitor 12 rises roughly to 4T0, and the potential of the smoothing capacitor 12 increases to the Zener diode 2
When the zener voltage exceeds 60, the zener diode 2
Since current flows to the gate of the thyristor 25 through 6, the thyristor 25 is turned on, and the smoothing capacitor 1
2 flows to the thyristor 25, the resistor 24, the light emitting diode 6, and the thyristor 17;
A current higher than the holding current always flows through the
The light emitting diode has a shape without a light emitting block.

このため半導体スイッチ8も、常時連続状態となる。本
発明によって突入電流防止用抵抗器が不用となり過大d
v/dtの印加もなくなる。又半導体スイッチ8のゲー
ト信号に、直流的レベルの信号となる。
Therefore, the semiconductor switch 8 is also always in a continuous state. The present invention eliminates the need for a resistor for preventing inrush current, resulting in excessive d
The application of v/dt is also eliminated. Further, the gate signal of the semiconductor switch 8 becomes a DC level signal.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、抵抗を止めることができ、また、誤#
J作防止が可能となる。
According to the present invention, resistance can be stopped and false #
It is possible to prevent J cropping.

【図面の簡単な説明】[Brief explanation of drawings]

舅1図に本発明の半導体装置の制御回路の実施例の回路
図、第2図に従来の装置の回路図、第3図に本発明の半
導体装置の制御回路の他の実施例で、整流用ダイオード
ブリッジの直流j@に突入電流防止回路を挿入した状態
の説明図である。 8・・・半導体スイッチ、12・・・平iコンデンサー
Figure 1 is a circuit diagram of an embodiment of the control circuit for the semiconductor device of the present invention, Figure 2 is a circuit diagram of a conventional device, and Figure 3 is another embodiment of the control circuit for the semiconductor device of the present invention. FIG. 2 is an explanatory diagram of a state in which a rush current prevention circuit is inserted into the DC j@ of the diode bridge for use in the present invention. 8... Semiconductor switch, 12... Flat i capacitor.

Claims (1)

【特許請求の範囲】[Claims] 1、コンデンサー平滑回路をもつ整流回路で、起動時に
コンデンサーへ流れ込む突入電流を押えるため半導体ス
イッチを位相制御により通流角を徐々にひろげる方式と
し、通流角制御電源を平滑用コンデンサーの充電々圧の
電位変化を利用し、平滑用コンデンサーの電位がある値
に確立したら、半導体スイッチには、直流的電流を流す
ようにしたことを特徴とする半導体装置の制御回路。
1. A rectifier circuit with a capacitor smoothing circuit. In order to suppress the rush current flowing into the capacitor at startup, the conduction angle is gradually expanded by phase control of the semiconductor switch, and the conduction angle control power source is used to control the charging voltage of the smoothing capacitor. A control circuit for a semiconductor device, characterized in that when the potential of a smoothing capacitor is established at a certain value by utilizing the change in potential of the semiconductor switch, a direct current is caused to flow through the semiconductor switch.
JP12108986A 1986-05-28 1986-05-28 Control circuit for semiconductor device Pending JPS62281761A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12108986A JPS62281761A (en) 1986-05-28 1986-05-28 Control circuit for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12108986A JPS62281761A (en) 1986-05-28 1986-05-28 Control circuit for semiconductor device

Publications (1)

Publication Number Publication Date
JPS62281761A true JPS62281761A (en) 1987-12-07

Family

ID=14802597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12108986A Pending JPS62281761A (en) 1986-05-28 1986-05-28 Control circuit for semiconductor device

Country Status (1)

Country Link
JP (1) JPS62281761A (en)

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