JPS62278784A - Circuit apparatus for melting zone of semiconductor rod without melting pot - Google Patents
Circuit apparatus for melting zone of semiconductor rod without melting potInfo
- Publication number
- JPS62278784A JPS62278784A JP11806787A JP11806787A JPS62278784A JP S62278784 A JPS62278784 A JP S62278784A JP 11806787 A JP11806787 A JP 11806787A JP 11806787 A JP11806787 A JP 11806787A JP S62278784 A JPS62278784 A JP S62278784A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- coil
- induction heating
- melting
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 238000002844 melting Methods 0.000 title description 10
- 230000008018 melting Effects 0.000 title description 10
- 238000010438 heat treatment Methods 0.000 claims description 54
- 230000006698 induction Effects 0.000 claims description 35
- 239000003990 capacitor Substances 0.000 claims description 31
- 238000004857 zone melting Methods 0.000 claims description 15
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/22—Furnaces without an endless core
- H05B6/30—Arrangements for remelting or zone melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Induction Heating (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Crucibles And Fluidized-Bed Furnaces (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
３、発明の詳細な説明
〔産業上の利用分野〕
本発明は、半導体棒のるつぼ無し帯域溶融のための回路
装置に関し、更に詳しく言えば、ａ） 振動回路コンデ
ンサが振動回路コイルと加熱並列振動回路との直列回路
に並列接続され、ｂ） 加熱並列振動回路は加熱回路コ
ンデンサと接地された誘導加熱コイルから構成され、Ｃ
） 振動回路コイルは誘導加熱コイルに比べて大きなイ
ンダクタンスを持ち、
ｄ） 振動回路コイルと振動回路コンデンサとの接続点
が高周波発生器の出力端子に接続されている
ような半導体棒のるつぼ無し帯域溶融のための回路装置
に関する。[Detailed Description of the Invention] 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a circuit device for crucible-free zone melting of a semiconductor bar, and more specifically, a) an oscillating circuit capacitor is b) The heating parallel vibration circuit is composed of a heating circuit capacitor and a grounded induction heating coil, and C
) the oscillating circuit coil has a large inductance compared to the induction heating coil; d) crucible-free zone melting of semiconductor rods such that the connection point between the oscillating circuit coil and the oscillating circuit capacitor is connected to the output terminal of the high-frequency generator. The present invention relates to a circuit device for.
るつぼ無し帯域溶融法においては、結晶半導体棒、特に
シリコン棒が両端で張架されて垂直に保持される。例え
ば垂直軸に固定されている画保持体がその軸を中心に回
転可能になっていて、また、例えば棒の横断面積を帯域
溶融の際に変化させようとする場合には垂直方向に移動
可能になっている。半導体棒に溶融帯域を生じさせるた
めに、半導体棒の一部分が誘導加熱コイルによってリン
グ状に包囲される。この誘導加熱コイルに高周波の交流
電流が流されると、誘導加熱コイルによって形成される
高周波の交番磁界は半導体棒に発生する渦電流により溶
融帯域を生じさせる。溶融帯域を半導体棒を通して長手
方向に移動させるために、固定されている誘導加熱コイ
ルの場合には上側および下側の棒保持体を引張軸方向に
平行移動させるか、または誘導加熱コイル自身を軸方向
に移動可能に配置するかのいずれかを選べばよい。In the crucibleless zone melting process, a crystalline semiconductor rod, in particular a silicon rod, is held vertically with tension at both ends. For example, an image carrier fixed on a vertical axis can be rotated about that axis and can also be moved in the vertical direction, for example if the cross-sectional area of the rod is to be varied during zone melting. It has become. In order to create a melting zone in the semiconductor rod, a portion of the semiconductor rod is surrounded in a ring by an induction heating coil. When a high-frequency alternating current is passed through the induction heating coil, the high-frequency alternating magnetic field generated by the induction heating coil causes a melting zone to occur due to the eddy current generated in the semiconductor rod. In order to move the melting zone longitudinally through the semiconductor rod, the upper and lower rod holders are translated in the direction of the tension axis in the case of fixed induction heating coils, or the induction heating coil itself is moved axially. You can choose between arranging it so that it can move in the direction.
単結晶の半導体棒を製造する場合には、るつぼ無し帯域
溶融法の開始時に単結晶の種結晶が半導体棒に溶着させ
られる０種結晶の直径は一般に帯域溶融処理すべき半導
体棒の直径よりも数倍率さい。したがって、帯域溶融法
の開始時に徐々に増大する溶融帯域直径が前もって考慮
される。それにより、種結晶直径と結晶化していく単結
晶の直径との間に円錐状の移行が得られる。When manufacturing single-crystalline semiconductor rods, the diameter of the single-crystalline seed crystal, which is deposited onto the semiconductor rod at the beginning of the crucibleless zone melting process, is generally smaller than the diameter of the semiconductor rod to be zone-melted. A few magnifications. A gradually increasing melting zone diameter is therefore taken into account at the beginning of the zone melting process. A conical transition is thereby obtained between the seed crystal diameter and the diameter of the crystallizing single crystal.
全帯域溶融プロセスの量変化されない寸法を持つ誘導加
熱コイルのインダクタンスは、増大する負荷とともに、
即ち溶融帯域の直径増大とともに小さくなる。溶融帯域
の直径増大にともなうインダクタンスおよび品質の変化
は、溶融帯域中に生じる電流の著しい変化をもたらす。The amount of full-band melting processThe inductance of the induction heating coil with dimensions unchanged, with increasing load,
That is, it becomes smaller as the diameter of the melting zone increases. Changes in inductance and quality with increasing diameter of the melting zone result in significant changes in the current produced in the melting zone.
特公昭６１−３７２４０号公報には、るつぼ無し帯域溶
融のための高周波発生器の回路装置が記載されている０
個々の回路部分は冷却されるにはおよばない、高周波発
生器の出力端は結合コンデンサを介して並列振動回路と
接続されている。この並列振動回路は振動回路コンデン
サと、振動回路コイルと誘導加熱コイルとの直列回路と
からなる。振動回路コイルは誘導加熱コイルに比べて大
きなインダクタンスを持つ、更に、誘導加熱コイルには
比較的大きな静電容量を持つ加熱回路コンデンサが並列
接続されている。この加熱並列回路の加熱回路コンデン
サは、それの共振周波数「Ｓが高周波発生器の周波数ｒ
ｐ（例えば１〜５ ＭＨｚ）の２倍よりも小さく選定さ
れている。この措置によって、この回路装置は５０ａ＋
ｍよりも大きい直径を持つ半導体棒の帯域溶融の際に生
じる負荷変化に対して臨界的でな（なる、この上、この
回路装置は、電圧スパイクの発生を避け、それによって
帯域溶融設備を損傷する可能性のある誘導加熱コイルの
範囲における電圧スパークを防止するように動作する。Japanese Patent Publication No. 61-37240 describes a circuit device of a high frequency generator for zone melting without a crucible.
The individual circuit parts are not cooled; the output of the high-frequency generator is connected via a coupling capacitor to a parallel resonant circuit. This parallel oscillating circuit consists of an oscillating circuit capacitor and a series circuit of an oscillating circuit coil and an induction heating coil. The oscillating circuit coil has a larger inductance than the induction heating coil, and the induction heating coil is further connected in parallel with a heating circuit capacitor having a relatively large capacitance. The heating circuit capacitor of this heating parallel circuit has its resonant frequency "S" and the frequency r of the high frequency generator.
p (for example, 1 to 5 MHz). With this measure, this circuit arrangement is 50a+
In addition, this circuit arrangement avoids the occurrence of voltage spikes and thereby damages the zone melting equipment. It operates to prevent voltage sparks in the range of the induction heating coil that may occur.
るつぼ無し帯域溶融法によって特開昭６１−３７２４０
号公報に記載の高周波発生器を用いて１００Ｍよりも大
きい直径を持つ結晶半導体棒を製造しようとする場合に
、誘導加熱コイルにおける大きな負荷変化により高周波
発生器の効率が低下し、加熱並列回路への陽極交流電圧
の最適な印加が行えないことが判明した。Unexamined Japanese Patent Publication No. 61-37240 by crucibleless zone melting method
When attempting to manufacture a crystalline semiconductor rod with a diameter larger than 100M using the high frequency generator described in the publication, the efficiency of the high frequency generator decreases due to a large load change in the induction heating coil, and the parallel heating circuit It was found that the optimum application of the anode AC voltage could not be performed.
本発明の目的は、例えば１ｏｏａｎよりも大きい直径を
持つシリコン棒の帯域溶融のための高周波発生器でも負
荷変化に対して臨界的でなく、且つ良好な効率を持つよ
うなるつぼ無し帯域溶融のだめの回路装置を得ることに
ある。The object of the invention is to create a crucible-less zone melting vessel which is not critical to load changes and has good efficiency even in high frequency generators for zone melting of silicon rods with a diameter larger than 1 ooan, for example. The purpose is to obtain a circuit device.
上記目的は、本発明によれば、
ａ） 振動回路コンデンサが振動回路コイルと加熱並列
振動回路との直列回路に並列接続され、ｂ） 加熱並列
振動回路は加熱回路コンデンサと接地された誘導加熱コ
イルから構成され、ｃ）撮動回路コイルは誘導加熱コイ
ルに比べて大きなインダクタンスを持ち、
ｄ） 振動回路コイルと振動回路コンデンサとの接続点
が高周波発生器の出力端子に接続されている
ような半導体棒のるつぼ無し帯域溶融のための回路装置
において、
ｅ） 振動回路コンデンサの静電容量は調整可能であり
、
ｆ） 高周波発生器の出力電圧は調整可能であることに
よって達成される。The above object, according to the invention, is such that: a) a vibrating circuit capacitor is connected in parallel to a series circuit of a vibrating circuit coil and a heating parallel vibrating circuit; b) the heating parallel vibrating circuit is connected to a heating circuit capacitor and a grounded induction heating coil; c) the imaging circuit coil has a larger inductance than the induction heating coil, and d) a semiconductor such that the connection point between the vibration circuit coil and the vibration circuit capacitor is connected to the output terminal of the high frequency generator. In the circuit arrangement for crucibleless zone melting of rods, this is achieved by: e) the capacitance of the oscillating circuit capacitor is adjustable; and f) the output voltage of the high frequency generator is adjustable.
以下、第１図ないし第３図を参照しながら本発明を実施
例について詳細に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below with reference to FIGS. 1 to 3.
第１図は一端を接地された誘導加熱コイルを備えた本発
明による回路装置を示し、第２図は第１図の回路装置の
端子ａ、ａ’に関する周波数伝達特性を示し、第３図は
中間タップを接地された誘導加熱コイルを備えた本発明
による回路装置を示す。FIG. 1 shows a circuit arrangement according to the invention with an induction heating coil grounded at one end, FIG. 2 shows the frequency transfer characteristics for terminals a, a' of the circuit arrangement of FIG. 1, and FIG. 1 shows a circuit arrangement according to the invention with an induction heating coil whose center tap is grounded;
第１図による回路装置は、簡単化のために３極管として
示された高周波発生器１を持ち、この高周波発生器１の
出力端は結合コンデンサ２を介して並列振動回路に接続
されている。この並列振動回路は、調整可能な静電容量
を持つ振動回路コンデンサ３と、振動回路コイル４およ
び誘導加熱コイル５の直列回路とからなる。振動回路コ
イル４は誘導加熱コイル５に比べて大きなインダクタン
スを持つ。誘導加熱コイル５は、巻回されて例えば細長
く切られた回転対称の中空体として実施することができ
る。かかる誘導加熱コイル５は非常に僅かなインダクタ
ンスを持つ、誘導加熱コイル５に並列に比較的大きな静
電容量を持つ加熱回路コンデンサ６が接続されている。The circuit arrangement according to FIG. 1 has a high-frequency generator 1, shown for simplicity as a triode, the output of which is connected via a coupling capacitor 2 to a parallel oscillating circuit. . This parallel oscillating circuit consists of an oscillating circuit capacitor 3 with adjustable capacitance, and a series circuit of an oscillating circuit coil 4 and an induction heating coil 5. The vibration circuit coil 4 has a larger inductance than the induction heating coil 5. The induction heating coil 5 can be embodied as a rotationally symmetrical hollow body which is wound and, for example, cut into strips. The induction heating coil 5 has a very low inductance, and a heating circuit capacitor 6 having a relatively large capacitance is connected in parallel to the induction heating coil 5.
加熱回路コンデンサ６の静電容量は、加熱並列回路の共
振周波数が最大で高周波発生器の動作周波数の２倍だけ
はずれるように選定されている。The capacitance of the heating circuit capacitor 6 is selected such that the resonant frequency of the heating parallel circuit deviates by a maximum of twice the operating frequency of the high-frequency generator.
高周波発生器１の動作周波数ｒｐは、主として並列振動
回路の値、つまり振動回路コンデンサ３および振動回路
コイル４と誘導加熱コイル５との直列回路の値から決ま
る。The operating frequency rp of the high frequency generator 1 is determined mainly from the values of the parallel oscillating circuit, that is, the values of the series circuit of the oscillating circuit capacitor 3 and the oscillating circuit coil 4 and the induction heating coil 5.
結合コンデンサ１を考慮に入れない場合、高周波発生器
は、個々の回路要素（Ｃ３，Ｌ、、Ｃ，。If we do not take into account the coupling capacitor 1, the high-frequency generator consists of individual circuit elements (C3,L,,C,.
Ｌｓ）が損失なしと仮定すれば、次のりアクタンス２掻
関数、即ち、
ｐ（ｐ”ｃｉＬルｇ＋Ｌａ＋Ｌｓ）
ｐ、’Ｃ２Ｃ６Ｌルｓ＋ｐ”（Ｃ４Ｌ５→Ｃ３Ｌｓ＋Ｃ
１Ｌ４）＋１によるリアクタンス２極と端子ａ、ａ′に
おいて接続されている。但し、上式において、Ｃ：ｌ＝
振動回路コンデンサ３の静電容量り、＝振動回路コイル
４のインダクタンスＣ６＝加熱回路コンデンサ６の静電
容量Ｌ ｓ ＝誘導加熱コイル５のインダクタンスｐ＝
ｊ２πｆ、ｊ＝虚数単位、ｆ＝周波数である。Assuming that Ls) is lossless, then the following actance function, p(p"ciLg+La+Ls) p, 'C2C6Ls+p'(C4L5→C3Ls+C
It is connected to two poles of reactance by 1L4)+1 at terminals a and a'. However, in the above formula, C:l=
Capacitance of the vibrating circuit capacitor 3 = Inductance C6 of the vibrating circuit coil 4 = Capacitance L s of the heating circuit capacitor 6 = Inductance p of the induction heating coil 5 =
j2πf, j=imaginary unit, f=frequency.
第２図には、周波数伝達特性、即ち周波数に対する端子
ａ、ａ′に間するＸ （ｆ）の振幅の推移が示されてい
る。関数Ｘ （ｆ）の極点での境界で明らかなりアクタ
ンス２極の誘導性から容量性への跳躍が認められる。FIG. 2 shows the frequency transfer characteristic, that is, the change in the amplitude of X (f) between terminals a and a' with respect to frequency. A jump from inductive to capacitive actance two poles is evident at the boundary at the extreme point of the function X (f).
るつぼ無し帯域溶融の経過中における誘導加熱コイルの
インダクタンスの変化は、リアクタンス２掻関数Ｘ（ρ
）の別の周波数伝達特性を生じさせる。最大の出力整合
は、高周波発生器の出力インピーダンスが負荷インピー
ダンスへ変成される場合に可能である。インダクタンス
の変化は接続抵抗の変化を生じさせ、それにより誤整合
をもたらす、振動回路コンデンサ３の静電容量値の適当
な調整により、誘導加熱コイル５のインダクタンス変化
が補償される。The change in the inductance of the induction heating coil during the course of crucibleless zone melting is expressed by the reactance 2 ripple function X (ρ
) gives rise to different frequency transfer characteristics. Maximum output matching is possible if the output impedance of the high frequency generator is transformed to the load impedance. Changes in the inductance give rise to changes in the connection resistance, thereby leading to mismatching.By appropriate adjustment of the capacitance value of the oscillating circuit capacitor 3, the inductance change of the induction heating coil 5 is compensated.
理論的には加熱回路コンデンサ６の変化も誘導加熱コイ
ル５のインダクタンス変化の補償を生じさせることがで
きるが、しかし実用上の理由（加熱回路コンデンサの静
電容量は１０”＠ファラッド範囲になければならず、し
たがって調整可能なコンデンサとして実現可能でないと
いう理由）から実施できない。In theory, variations in the heating circuit capacitor 6 can also cause compensation for inductance variations in the induction heating coil 5, but for practical reasons (the capacitance of the heating circuit capacitor must be in the 10"@farad range) Therefore, it cannot be implemented because it is not practical as an adjustable capacitor).
この回路装置の実際の運転時には、例えば電圧測定器が
誘導加熱コイルに並列接続され、この電圧測定器は負荷
変化時に無負荷状態に対する電圧低下を指示する０手動
または電動操作にて例えば振動回路コンデンサの静電容
量が調整され、それにより最適な整合が得られる。During actual operation of this circuit arrangement, a voltage measuring device, for example, is connected in parallel to the induction heating coil, and this voltage measuring device indicates the voltage drop with respect to the no-load condition when the load changes. The capacitance of is adjusted to obtain optimal matching.
誘導加熱コイルにおける高い出力範囲を得るために、付
加的に高周波発生器の出力電圧を可変にすることもでき
る。これは、例えば高周波発生器の終段出力管の陽極電
圧に対するサイリスク調整器によって行うことができる
。In order to obtain a high power range in the induction heating coil, it is additionally possible to make the output voltage of the high-frequency generator variable. This can be done, for example, by means of a sirisk regulator for the anode voltage of the final output tube of the high-frequency generator.
第３図には第２の実施例が示されており、これは、誘導
加熱コイル５がコイル中間で接地されている点で第り図
の回路装置と相違している。第１図および第３図におけ
る帰還結合回路の表示は図の分かり易さのために省略さ
れている。ただ、回路装置の安定性の理由から、回路要
素３，４．５および６は振動回路の第２の指間波数が帰
還結合条件を持たないように選定されるように考慮すべ
きである。FIG. 3 shows a second embodiment, which differs from the circuit arrangement shown in FIG. 3 in that the induction heating coil 5 is grounded in the middle of the coil. The representation of the feedback coupling circuit in FIGS. 1 and 3 has been omitted for clarity of illustration. However, for reasons of stability of the circuit arrangement, consideration should be given to circuit elements 3, 4.5 and 6 in such a way that the second interdigital wave number of the oscillating circuit has no feedback coupling conditions.
以上のように、本発明によれば、振動回路コンデンサの
静電容量を調整可能にしたことによって、運転中におけ
る誘導加熱コイルのインダクタンス変化を補償して最適
整合を維持させることができ、更に高周波発生器の出力
電圧を調整可能にすることによって誘導加熱コイルにお
ける高い出力範囲を得ることができる。As described above, according to the present invention, by making the capacitance of the oscillating circuit capacitor adjustable, it is possible to compensate for changes in the inductance of the induction heating coil during operation and maintain optimum matching. A high power range in the induction heating coil can be obtained by making the output voltage of the generator adjustable.
第１図は本発明による回路装置の第１の実施例を示す回
路図、第２図は第１図の回路装置の端子ａ、ａ′に関す
る周波数伝達特性図、第３図は本発明による回路装置の
第２の実施例を示す回路図である。
１・・・高周波発生器、２・・・結合コンデンサ、３・
・・振動回路コンデンサ、４・・・振動回路コイル、５
・・・誘導加熱コイル、６・・・加熱回路コンデンサ。1 is a circuit diagram showing a first embodiment of the circuit device according to the present invention, FIG. 2 is a frequency transfer characteristic diagram regarding terminals a and a′ of the circuit device in FIG. 1, and FIG. 3 is a circuit diagram according to the present invention. FIG. 3 is a circuit diagram showing a second embodiment of the device. 1... High frequency generator, 2... Coupling capacitor, 3...
...Vibration circuit capacitor, 4...Vibration circuit coil, 5
...Induction heating coil, 6...Heating circuit capacitor.
Claims (1)
動回路との直列回路に並列接続され、ｂ）加熱並列振動
回路は加熱回路コンデンサと接地された誘導加熱コイル
とから構成され、ｃ）振動回路コイルは誘導加熱コイル
に比べて大きなインダクタンスを持ち、 ｄ）振動回路コイルと振動回路コンデンサとの接続点が
高周波発生器に接続されている 半導体棒のるつぼ無し帯域溶融のための回路装置におい
て、 ｅ）振動回路コンデンサの静電容量は調整可能であり、 ｆ）高周波発生器の出力電圧は調整可能であることを特
徴とする半導体棒のるつぼ無し帯域溶融のための回路装
置。[Claims] a) A vibrating circuit capacitor is connected in parallel to a series circuit of a vibrating circuit coil and a heating parallel vibrating circuit, and b) the heating parallel vibrating circuit is composed of a heating circuit capacitor and a grounded induction heating coil. , c) the oscillating circuit coil has a large inductance compared to the induction heating coil, and d) the connection point between the oscillating circuit coil and the oscillating circuit capacitor is connected to a high-frequency generator for crucible-free zone melting of semiconductor rods. A circuit arrangement for crucible-free zone melting of semiconductor bars, characterized in that: e) the capacitance of the oscillating circuit capacitor is adjustable; and f) the output voltage of the high-frequency generator is adjustable.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19863616595 DE3616595A1 (en) | 1986-05-16 | 1986-05-16 | HF heating circuit for zone refining of semiconductors |
| DE3616595.6 | 1986-05-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62278784A true JPS62278784A (en) | 1987-12-03 |
| JPH0640516B2 JPH0640516B2 (en) | 1994-05-25 |
Family
ID=6301007
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62118067A Expired - Lifetime JPH0640516B2 (en) | 1986-05-16 | 1987-05-13 | Circuit arrangement for crucibleless zone melting of semiconductor rods. |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH0640516B2 (en) |
| DE (1) | DE3616595A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4900887A (en) * | 1986-05-16 | 1990-02-13 | Siemens Aktiengesellschaft | Floating zone drawing circuitry for semiconductor rods |
| DE10328859B4 (en) * | 2003-06-20 | 2007-09-27 | Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. | Method and apparatus for pulling single crystals by zone pulling |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5519739A (en) * | 1978-07-28 | 1980-02-12 | Hiroshi Takebayashi | High frequency heating coil device |
| JPS5654298A (en) * | 1979-09-21 | 1981-05-14 | Siemens Ag | Manufacture of silicon by crucibleefree zone melting |
-
1986
- 1986-05-16 DE DE19863616595 patent/DE3616595A1/en not_active Withdrawn
-
1987
- 1987-05-13 JP JP62118067A patent/JPH0640516B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5519739A (en) * | 1978-07-28 | 1980-02-12 | Hiroshi Takebayashi | High frequency heating coil device |
| JPS5654298A (en) * | 1979-09-21 | 1981-05-14 | Siemens Ag | Manufacture of silicon by crucibleefree zone melting |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0640516B2 (en) | 1994-05-25 |
| DE3616595A1 (en) | 1987-11-19 |
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