JPS62277728A - Formation of pattern - Google Patents
Formation of patternInfo
- Publication number
- JPS62277728A JPS62277728A JP61122679A JP12267986A JPS62277728A JP S62277728 A JPS62277728 A JP S62277728A JP 61122679 A JP61122679 A JP 61122679A JP 12267986 A JP12267986 A JP 12267986A JP S62277728 A JPS62277728 A JP S62277728A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- oxygen gas
- resist layer
- resist
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 14
- 239000011261 inert gas Substances 0.000 claims abstract description 9
- 239000004372 Polyvinyl alcohol Substances 0.000 claims abstract description 7
- 229920002451 polyvinyl alcohol Polymers 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 229920000620 organic polymer Polymers 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 4
- 239000007789 gas Substances 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052786 argon Inorganic materials 0.000 abstract description 2
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 2
- 230000006866 deterioration Effects 0.000 abstract 2
- 239000002052 molecular layer Substances 0.000 abstract 2
- 239000012466 permeate Substances 0.000 abstract 2
- 238000005429 filling process Methods 0.000 abstract 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 241000612182 Rexea solandri Species 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
［産業上の利用分野］
本発明は半導体集積回路、磁気バブルメモリなどの製造
に適するパターン形成方法に関するものである。Detailed Description of the Invention 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a pattern forming method suitable for manufacturing semiconductor integrated circuits, magnetic bubble memories, and the like.
［従来の技術］
半導体集積回路、磁気バブルメモリなどの製造には、い
わゆるレジストと呼ばれる有機高分子材料が広く用いら
れている。このレジストとして多種多様の材料があるが
、ビスアジドと有機高分子から成るネガ型レジストもそ
のうちの一つである。[Prior Art] Organic polymer materials called resists are widely used in the manufacture of semiconductor integrated circuits, magnetic bubble memories, and the like. There are a wide variety of materials for this resist, one of which is a negative resist made of bisazide and an organic polymer.
この系のレジストとしての作用原理は次のように考えら
れている。The principle of operation of this system as a resist is considered as follows.
まず、露光によりビスアジドがナイトレンという活性種
に変化する。生成したナイトレンは、有機高分子と反応
し、いわゆる架橋反応を起こす。First, upon exposure to light, bisazide changes into an active species called nitrene. The generated nitrene reacts with organic polymers and causes a so-called crosslinking reaction.
その結果、露光部と未露光部での有機高分子の分子量に
差異を生じる事になる。この結果、溶剤に対する溶解性
に差異が生じるのでこの差異を利用して、一般にはネガ
型のパターンを１ｑる事ができる。As a result, a difference occurs in the molecular weight of the organic polymer between the exposed area and the unexposed area. As a result, a difference occurs in solubility in a solvent, and by utilizing this difference, it is generally possible to create a negative pattern of 1q.
［本発明が解決しようとする問題点］
ビスアジドと有酸高分子から成るネガ型レジメトにおい
て、有機高分子を変化させる事により目的とする所定の
レジストが得られるが、有機高分子の種類によってはナ
イトレンとの反応性が低下し、結果として感度の低下、
パターン形成の不均一性をもたらす場合がある。あるい
は、有機高分子とビスアジドとの相溶性が悪いと、ビス
アジドの添加量が押えられ、先述したと同様の問題をも
たらす場合がある。これらのことは特に露光雰囲気中に
酸素ガスが存在する場合に顕著に表われてくる。[Problems to be Solved by the Invention] In a negative regime consisting of bisazide and an acidic polymer, a desired resist can be obtained by changing the organic polymer, but depending on the type of organic polymer, Reactivity with nitrene decreases, resulting in decreased sensitivity,
This may lead to non-uniformity in pattern formation. Alternatively, if the compatibility between the organic polymer and bisazide is poor, the amount of bisazide added may be suppressed, resulting in the same problem as described above. These things become particularly noticeable when oxygen gas is present in the exposure atmosphere.
本発明の目的は、このような感度の低下あるいはパター
ンの不均一性を解消したパターン形成方法を提供するこ
とにある。An object of the present invention is to provide a pattern forming method that eliminates such a decrease in sensitivity or non-uniformity of the pattern.
［問題点を解決するための手段］
本発明は基板上にレジスト層を形成する工程と、このレ
ジスト層上に酸素ガス難透過性の有機高分子層を形成す
る工程と、前記レジスト層内に含まれる酸素ガスを不活
性ガスに置換する工程と、所望のレジストパターンを露
光、現像によって形成する工程とからなることを特徴と
するパターン形成方法である。[Means for Solving the Problems] The present invention includes a step of forming a resist layer on a substrate, a step of forming an organic polymer layer that is hardly permeable to oxygen gas on the resist layer, and a step of forming a resist layer in the resist layer. This pattern forming method is characterized by comprising a step of replacing the contained oxygen gas with an inert gas, and a step of forming a desired resist pattern by exposure and development.
本発明の方法に使用される酸素ガス難透過性の有機高分
子材料には１）露光時に感度を低下させない、２）下地
のレジスト層と混ざらない、などの特性が要求されるが
、このような特性を満足させるものとしてはたとえばポ
リビニルアルコールがあげられる。この有機高分子層の
膜厚は通常０．１〜０．３１Ｊ！ｒ１が適当である。The organic polymer material with low oxygen gas permeability used in the method of the present invention is required to have properties such as 1) not reducing sensitivity during exposure, and 2) not mixing with the underlying resist layer. An example of a material that satisfies these characteristics is polyvinyl alcohol. The thickness of this organic polymer layer is usually 0.1 to 0.31J! r1 is appropriate.
またレジスト層内に含まれる酸素ガスの不活性ガスへの
置換は、密封容器内に試料を置き、脱気、不活性ガスの
充填工程を繰り返し行う事により達成できる。不活性ガ
スとしては窒素ガス、アルゴンガスなどが好ましい。Further, the replacement of oxygen gas contained in the resist layer with an inert gas can be achieved by placing the sample in a sealed container and repeating the degassing and inert gas filling steps. As the inert gas, nitrogen gas, argon gas, etc. are preferable.
［実施例］ 次に本発明を実施例によって説明する。[Example] Next, the present invention will be explained by examples.
実施例 次に示す組成のレジスト溶液を調整した。Example A resist solution having the following composition was prepared.
（ＭＷ ３．６万、 ｌＶ１ｗ／１Ｖ１ｎ ＜ １
．１＞２．６−ビス（ｐ−アジドベンジリデン）−４−
メチルシクロへキサノン １重量部キシレン
２６０重量部このレジスト溶
液をスピンコード法により、Ｓｉ基板に塗布した。プリ
ベーク（８０″Ｃ，３０ｍ１ｎ ）後のレジスト膜厚は
約０．２５１ＪＩｎであった。次いで、下記の組成のポ
リビニルアルコール樹脂（ＰＶＡ）水溶液をスピンコー
ド法により、レジスト層上に塗布した。(MW 36,000, lV1w/1V1n < 1
．． 1>2.6-bis(p-azidobenzylidene)-4-
Methylcyclohexanone 1 part by weight Xylene 260 parts by weight This resist solution was applied to a Si substrate by a spin code method. The resist film thickness after pre-baking (80''C, 30 ml) was about 0.251 JIn. Next, a polyvinyl alcohol resin (PVA) aqueous solution having the composition shown below was applied onto the resist layer by a spin code method.
ポリビニルアルコール（重合度５００） １重量部水
４０重量
部プリヘーク（８０’Ｃ，３０ｍ１ｎ ＞後のＰＶＡ層
の厚みは約０．１１Ｊ！１１であった。この試料を密封
容器に入れ、脱気・Ｎ２ガス充填を５回繰り返し、−夜
装置した。Polyvinyl alcohol (degree of polymerization 500) 1 part by weight water
The thickness of the PVA layer after 40 parts by weight pre-hake (80'C, 30m1n) was approximately 0.11J!11.This sample was placed in a sealed container, degassing and N2 gas filling were repeated 5 times, and the apparatus was heated overnight. did.
次に縮小投影露光器（ＭＡＮＮタイプ４８００ＤＳＷ／
ＧＣＡ社製）を用いて、パターン露光を行った。Next, a reduction projection exposure device (MANN type 4800DSW/
Pattern exposure was performed using a camera (manufactured by GCA).
その後、水３０ＳｅＣ１エタノール３ｏｓｅｃ 、メチ
ルイソブチルケトン／ｎ−ブタノール＝１：２１ｍ１ｎ
、イソプロピルアルコール １ ｍｉｎと順次浸漬して
、所望の微細パターンを得た。After that, water 30SeC1 ethanol 3ose, methyl isobutyl ketone/n-butanol=1:21ml1n
, isopropyl alcohol for 1 min to obtain a desired fine pattern.
光学顕微鏡で、作成したパターンの観察を行ったところ
、パターンの不均一性は認められなかった。又、露光量
として、約２０ ｍＪ／Ｃｍ２で十分でおり、感度も優
れていた。When the created pattern was observed using an optical microscope, no non-uniformity of the pattern was observed. Further, an exposure amount of about 20 mJ/Cm2 was sufficient, and the sensitivity was excellent.
比較例
前記実施例において、試料の脱気・Ｎ２ガス充填を行な
わないほかは実施例と同様にして微細パターンを形成し
た。Comparative Example A fine pattern was formed in the same manner as in the Example, except that the sample was not degassed and the sample was not filled with N2 gas.
光学顕微鏡で作成したパターンの観察を行ったところ、
パターン形成に不均一性が認められた。When observing the pattern created using an optical microscope, we found that
Non-uniformity was observed in pattern formation.
例えば、線幅をパターン密度の高い所と低い所で比較す
ると、マスクが同−設計値にもかかわらず、前者の方が
太ったパターンが得られた。この時の露光量としては、
約１３０ ｍＪ／ｃｍ２で必った。For example, when comparing the line width between a high pattern density area and a low pattern density area, a thicker pattern was obtained in the former case even though the mask had the same design value. The exposure amount at this time is
It was necessary at about 130 mJ/cm2.
［発明の効果］
以上説明したように本発明のパターン形成方法によれば
レジストの露光時、酸素ガスの影響をほぼ完全に防ぐ事
ができる。このため感度に優れ、かつ均一性の良いパタ
ーン形成ができる。[Effects of the Invention] As explained above, according to the pattern forming method of the present invention, the influence of oxygen gas can be almost completely prevented during exposure of the resist. Therefore, it is possible to form a pattern with excellent sensitivity and good uniformity.
Claims (3)
スト層上に酸素ガス難透過性の有機高分子層を形成する
工程と、前記各層内に含まれる酸素ガスを不活性ガスに
置換する工程と、所望のレジストパターンを露光、現像
によつて形成する工程とからなることを特徴とするパタ
ーン形成方法。(1) A step of forming a resist layer on a substrate, a step of forming an organic polymer layer that is hardly permeable to oxygen gas on this resist layer, and replacing the oxygen gas contained in each layer with an inert gas. 1. A pattern forming method comprising: a step of forming a desired resist pattern by exposure and development.
る特許請求の範囲第１項記載のパターン形成方法。(2) The pattern forming method according to claim 1, wherein the resist is a negative resist containing bisazide.
コール樹脂である特許請求の範囲第１項記載のパターン
形成方法。(3) The pattern forming method according to claim 1, wherein the organic polymer hardly permeable to oxygen gas is a polyvinyl alcohol resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61122679A JPS62277728A (en) | 1986-05-27 | 1986-05-27 | Formation of pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61122679A JPS62277728A (en) | 1986-05-27 | 1986-05-27 | Formation of pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62277728A true JPS62277728A (en) | 1987-12-02 |
Family
ID=14841949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61122679A Pending JPS62277728A (en) | 1986-05-27 | 1986-05-27 | Formation of pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62277728A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5915243A (en) * | 1982-07-16 | 1984-01-26 | Nec Corp | Resist material |
| JPS59106119A (en) * | 1982-12-10 | 1984-06-19 | Hitachi Ltd | Forming of fine resist pattern |
| JPS59198446A (en) * | 1983-04-26 | 1984-11-10 | Nippon Telegr & Teleph Corp <Ntt> | Photosensitive resin composition and using method thereof |
| JPS60211940A (en) * | 1984-04-06 | 1985-10-24 | Toshiba Corp | Photolithographic method |
-
1986
- 1986-05-27 JP JP61122679A patent/JPS62277728A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5915243A (en) * | 1982-07-16 | 1984-01-26 | Nec Corp | Resist material |
| JPS59106119A (en) * | 1982-12-10 | 1984-06-19 | Hitachi Ltd | Forming of fine resist pattern |
| JPS59198446A (en) * | 1983-04-26 | 1984-11-10 | Nippon Telegr & Teleph Corp <Ntt> | Photosensitive resin composition and using method thereof |
| JPS60211940A (en) * | 1984-04-06 | 1985-10-24 | Toshiba Corp | Photolithographic method |
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