JPS62276885A - Optical semiconductor device - Google Patents
Optical semiconductor deviceInfo
- Publication number
- JPS62276885A JPS62276885A JP61218021A JP21802186A JPS62276885A JP S62276885 A JPS62276885 A JP S62276885A JP 61218021 A JP61218021 A JP 61218021A JP 21802186 A JP21802186 A JP 21802186A JP S62276885 A JPS62276885 A JP S62276885A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- metal layer
- conductivity type
- metal
- metallic layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 66
- 230000003287 optical effect Effects 0.000 title claims description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 67
- 239000002184 metal Substances 0.000 claims abstract description 67
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 5
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 4
- 229910052804 chromium Inorganic materials 0.000 claims abstract 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 10
- 238000009792 diffusion process Methods 0.000 abstract description 8
- 239000002019 doping agent Substances 0.000 abstract description 7
- 239000000853 adhesive Substances 0.000 abstract description 5
- 230000001070 adhesive effect Effects 0.000 abstract description 5
- 229910052737 gold Inorganic materials 0.000 abstract description 5
- 230000004888 barrier function Effects 0.000 abstract description 3
- 230000002349 favourable effect Effects 0.000 abstract 2
- 239000010931 gold Substances 0.000 description 10
- 238000005253 cladding Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000007790 solid phase Substances 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 101150110330 CRAT gene Proteins 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 101150054880 NASP gene Proteins 0.000 description 1
- 229910018885 Pt—Au Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
［発明の目的］
（産業上の利用分野）
本発明は、光半導体装置に関し、持にその重列、構造を
改良した光半導体装置に関する。Detailed Description of the Invention 3. Detailed Description of the Invention [Object of the Invention] (Industrial Field of Application) The present invention relates to an optical semiconductor device, and particularly to an optical semiconductor device with improved stacking and structure.
（従来の技術）
半導体レーザや発光ダイオードなどの光半導体装置では
、半導体チップへの通電のために半導体層に金属電極を
被着している。金属電極としては、一般に、Ｔｉ／Ｐｔ
／Ａｕからなる多層金属膜が用いられる。(Prior Art) In optical semiconductor devices such as semiconductor lasers and light emitting diodes, a metal electrode is attached to a semiconductor layer in order to conduct electricity to a semiconductor chip. The metal electrode is generally Ti/Pt.
A multilayer metal film consisting of /Au is used.
（発明が解決しようとする問題点）
上述の多層金属膜によれば、半導体層との間に良好な接
着力が得られるが、充分なオーミック接触が得られない
という問題がある。また、良好なオーミック接触を得る
ために、例えば半導体層がｐ型半導体でおる場合には、
ｐ型半導体層の不純物であるＺｎを含むＡｕ−Ｚｎ膜が
電極金属として用いられることもある。しかし、この場
合にもＡＵの半導体層への拡散のため、装置のｆ：＃１
性を高くすることができないという問題がある。また半
導体層上に電流狭窄のための絶縁層が形成されている場
合には、電極金工の付着力を充分にできず、電慢剥がれ
も問題となる。(Problems to be Solved by the Invention) According to the above-mentioned multilayer metal film, good adhesive strength can be obtained between the multilayer metal film and the semiconductor layer, but there is a problem that sufficient ohmic contact cannot be obtained. In addition, in order to obtain good ohmic contact, for example, when the semiconductor layer is a p-type semiconductor,
An Au-Zn film containing Zn, which is an impurity of the p-type semiconductor layer, is sometimes used as the electrode metal. However, in this case as well, due to the diffusion of AU into the semiconductor layer, f: #1 of the device
The problem is that it is not possible to increase the sex. Furthermore, if an insulating layer for current confinement is formed on the semiconductor layer, the adhesion of the electrode metal work will not be sufficient, and peeling of the electrode will also become a problem.
この発明は、オーミック接触が良好で、かつ信頼性の高
い電極構造を有する光半導体装置を提供するものである
。The present invention provides an optical semiconductor device having an electrode structure with good ohmic contact and high reliability.
［発明の構成コ
（問題点を解決するための手段）
この発明によれば、第１導伝型半導体層を備えた半導体
チップと、この第１導伝型半導体層上に形成されたＴｉ
あるいはＣｒからなる第１の金属層と、この第１の金属
層の上に形成された第１導伝型半導体層の導伝型と同じ
導伝型を決定する元素を含む第２の金属層と、この第２
の金属層上に形成されたＰｔあるいはＰｄからなる第３
の金属層と、この第３の金属層上に形成されたＡＵかう
なる第４の金属層とを備えた光半導体装置が提供される
。[Configuration of the Invention (Means for Solving Problems) According to the present invention, a semiconductor chip including a first conductivity type semiconductor layer, and a Ti semiconductor chip formed on the first conductivity type semiconductor layer.
Alternatively, a first metal layer made of Cr and a second metal layer containing an element that determines the same conductivity type as that of the first conductivity type semiconductor layer formed on the first metal layer. And this second
A third metal layer made of Pt or Pd is formed on the metal layer of
An optical semiconductor device is provided that includes a metal layer formed on the third metal layer and a fourth metal layer made of AU formed on the third metal layer.
（作用）
第１導伝型半導体層に、ＴｉあるいはＯｒからなる接着
金属としての第１の金属層を形成し、この上に第１導伝
型半導体層の導伝型と同じ導伝型を決定するドーパント
元素を含む第２の金属層を形成した後、熱処理すること
により第２の金属層を椙成するドーパント元童が第１の
金属層中を拡散して行き、第１導伝型半心体胴中にも拡
散到達する。これにより、良好なオーミック接触が実現
される。また、第１の金属層は接着金属として作用し、
良好な接着も同時に実現される。なあ、第２の金属層の
上に形成されたｐｔあるいはＰｄからなる第３の金属層
は、熱処理時に、第２の金属、芒の元素が、第３の金属
層上に形成されたＡ ｕからなる第４の金属層へ拡散し
たり、第２の金属層に第４の金Ｒ層の元素が拡散してい
くのを防止するバリア層として作用する。(Function) A first metal layer as an adhesive metal made of Ti or Or is formed on the first conductivity type semiconductor layer, and a conductivity type of the same conductivity type as that of the first conductivity type semiconductor layer is formed on the first metal layer as an adhesive metal. After forming the second metal layer containing the dopant element to be determined, the dopant element forming the second metal layer is diffused into the first metal layer by heat treatment, and the first conductivity type is formed. It also diffuses into the half-centered torso. This achieves good ohmic contact. The first metal layer also acts as an adhesive metal,
Good adhesion is also achieved at the same time. Incidentally, the third metal layer made of PT or Pd formed on the second metal layer is formed by A u formed on the third metal layer when the second metal, the awn element, is formed on the third metal layer during heat treatment. It acts as a barrier layer to prevent the elements of the fourth gold R layer from diffusing into the fourth metal layer made of gold or the second metal layer.
（実施例）
以下、本発明を実施例を示す図面を参照して詳細に説明
する。第１図は、＊発明を端面発光型発光ダイオードに
適応した典型的な実施例の断面図を示す。(Examples) Hereinafter, the present invention will be described in detail with reference to drawings showing examples. FIG. 1 shows a cross-sectional view of a typical embodiment in which the invention is applied to an edge-emitting type light emitting diode.
この光半導体装置においては、ｎ型ＩｎＰ半導体基板２
上に、ペデロ接合構造を有する所定の半導体層、例えば
ｎ型ＩｎＰクラッド層４、ＧａＩｎＡｓＰ活性層６、ｐ
ＷＩｎＰクラッド層８、ｐＷＧａｌｎＡＳＰキャップ層
１０を順次エピタキシャル成長して形成する。この後、
電流狭窄のために所定の寸法のストライプ状の開孔１２
を有する絶縁層１４を、ｐ型ＧａＩｎＡＳＰキャップｇ
１ｏ上に厚さ２０００〜３０００人に形成する。次にｐ
型オーミック電極１６を、絶縁膜１４およびｐ型ＧａＩ
ｎＡｓＰキャップ層１０上に形成する。ｐ型オーミック
電極１６は、第１の金属層１８としてＴｉを５００人、
＠２の金属層２０としてＺｎを５００人、第３の金属層
２２としてＰｔを１０００人、第４の金、幌層２４とし
てＡｕを１５００人の厚さに、それぞれ連続的に蒸巷な
いしスパッタ法で成膜する。In this optical semiconductor device, an n-type InP semiconductor substrate 2
Above, predetermined semiconductor layers having a Pedro junction structure, for example, an n-type InP cladding layer 4, a GaInAsP active layer 6, a p
A WInP cladding layer 8 and a pWGalnASP capping layer 10 are formed by sequential epitaxial growth. After this,
Striped apertures 12 with predetermined dimensions for current confinement
The insulating layer 14 having a p-type GaInASP cap g
Form to a thickness of 2,000 to 3,000 people on 1o. Then p
The type ohmic electrode 16 is connected to the insulating film 14 and the p-type GaI
Formed on the nAsP cap layer 10. The p-type ohmic electrode 16 includes 500 Ti as the first metal layer 18;
@ 500 layers of Zn as the second metal layer 20, 1,000 layers of Pt as the third metal layer 22, and 1,500 layers of Au as the fourth gold layer 24, each by continuous evaporation or sputtering. The film is formed using the method.
ｐ型オーミック電極１６の各層を成ＦＪ後、オーミック
性を高めるため、不活性ガスないし還元性ガス雰囲気中
で４００〜４５０’Ｃ１１０秒〜１０分間の熱処理（シ
ンター）を施す。この１多、第４の金属層２４上にＡＩ
ＪからなるＰＨ３（Ｐｌａｔｅｄ Ｈｅａｔ ５ｉｎｋ
） １２６を２μｍの厚さに形成する。After forming each layer of the p-type ohmic electrode 16 by FJ, heat treatment (sintering) is performed for 110 seconds to 10 minutes at 400-450'C in an inert gas or reducing gas atmosphere in order to improve ohmic properties. This layer is coated with AI on the fourth metal layer 24.
PH3 (Plated Heat 5ink) consisting of J
) 126 is formed to a thickness of 2 μm.
一方、ｎ型ＩｎＰ半導体基板２の事面側にはＡｕ−Ｇｃ
−Ｐｔ−Ａｕの合金層からなるｎ型電閥２８を形成する
。On the other hand, on the side of the n-type InP semiconductor substrate 2, Au-Gc
- An n-type electric current 28 made of an alloy layer of Pt-Au is formed.
この後、個別半導体チップに分割して所定の光半導体装
置が得られる。なあ、図中３０は発光領域であり、また
この光半導体装置はＰＨ３ｉＷ２６側がステムにマウン
トされる。Thereafter, it is divided into individual semiconductor chips to obtain a predetermined optical semiconductor device. Note that 30 in the figure is a light emitting region, and the PH3iW26 side of this optical semiconductor device is mounted on the stem.
さて、上述の熱処理においてＴｉ層１８とｐｔ層２２の
中間にあるＺｎ２０が固相拡散を行ないＴｉＭ１８中を
通過し、ｐ型ＧａＩｎＡＳＰキｔツブ５ｉ。Now, in the heat treatment described above, Zn 20 located between the Ti layer 18 and the PT layer 22 undergoes solid phase diffusion and passes through the TiM 18, forming the p-type GaInASP kit 5i.
中に拡散する。過剰なＺｎがドーピングされたｐ型Ｇａ
ＩｎＡｓＰキャップ層１０のＺｎ拡散層は、！＠退し電
極との障壁電位が小さくなり、オーミック性の優れた層
となる。なお、Ｔｉからなる第１層１８はＺｎの拡散通
過のために厚さは１０００Å以下、例えば１００〜ｉ
ｏｏｏ人とすることが好ましい。diffuse inside. p-type Ga doped with excess Zn
The Zn diffusion layer of the InAsP cap layer 10 is! The barrier potential with the @recessed electrode is reduced, resulting in a layer with excellent ohmic properties. Note that the first layer 18 made of Ti has a thickness of 1000 Å or less, for example, 100-i
It is preferable to use ooo people.
また、絶縁層１４上のＴｉ層１８は絶縁層１４との接着
力が強く、熱処理後頁に接着強度を増す。勿論、熱処理
によりＺｎの拡散も進行するが、絶縁層１４が２０００
〜３０００人と厚いため、絶縁層１４の一部の領域で拡
散が停止し、電流狭窄の機能にはなんらの影響も及ぼさ
ない。Further, the Ti layer 18 on the insulating layer 14 has strong adhesion to the insulating layer 14, and increases the adhesion strength to the page after heat treatment. Of course, Zn diffusion progresses due to the heat treatment, but if the insulating layer 14
Since it is as thick as ~3,000 thick, diffusion stops in some regions of the insulating layer 14, and the current confinement function is not affected in any way.
一般に電極の最上層はＡ、ｕで構成することが電極の安
定化、信頼性の面から必要でおる。また、熱処理により
Ｚｎはｌｉ層１８とは反対側も拡散し、例えばＡｕの厚
い膜が存在するとＺｎはＡｕ中に多く拡散し、ｐ型半導
体側に拡散する割合が減少し、オーミック性が低下する
。このため、本発明ではＺｎのＡｔ、１層２Ａ側への拡
散を防止する目的で、７０層２０とＡｕ層２４との間に
Ｐｔ１１２２を挿入することが重要である。また、この
Ｐｔ１２２により八Ｕの半導体層側への拡散が防止され
る。In general, it is necessary for the top layer of the electrode to be composed of A and u in terms of stability and reliability of the electrode. In addition, due to heat treatment, Zn also diffuses on the side opposite to the Li layer 18. For example, if a thick Au film exists, Zn will diffuse into the Au a lot, and the proportion of Zn that diffuses toward the p-type semiconductor side will decrease, resulting in a decrease in ohmic properties. do. Therefore, in the present invention, it is important to insert Pt1122 between the 70 layer 20 and the Au layer 24 in order to prevent Zn from diffusing into the At layer 1 layer 2A side. Moreover, this Pt122 prevents the diffusion of 8U toward the semiconductor layer side.
従って、本実施例によれば、電極の付着力が強く、オー
ミック性が良好で、信頼性の高い電極構造をもつ光半導
体装置が得られる。Therefore, according to this embodiment, an optical semiconductor device having a strong electrode adhesion, good ohmic properties, and a highly reliable electrode structure can be obtained.
なあ、第１金属層としてはｌｉの他にＣｒが、また第３
金屈層としてはＰｔの他にＰｄが使用できる。更に第２
金属層としては、ｐ型ドーパントとしてはＺｎ以外にＢ
ｅ、ｃｄなどの■族金属が使用できる。By the way, in addition to Li, Cr is used as the first metal layer, and Cr is used as the first metal layer.
In addition to Pt, Pd can be used as the metal layer. Furthermore, the second
In addition to Zn, B is used as a p-type dopant in the metal layer.
Group II metals such as e and cd can be used.
（他の実施例）
次に、本発明を内部狭窄型半導体レーザに適応した実施
例を示す。(Other Embodiments) Next, an embodiment in which the present invention is applied to an internally constricted semiconductor laser will be described.
この実施例は第２図に断面図を示すように構成される。This embodiment is constructed as shown in cross-section in FIG.
まず、ｎ型ＩｎＰ基板３２上にｎ型ＩｎＰクラッド層３
４、ｒ ｒｌＧａＡｓｐ活性層３６、ｐ型■ｎｐクラッ
ド層３８をエピタキシャル成長させる。First, the n-type InP cladding layer 3 is placed on the n-type InP substrate 32.
4. The r rlGaAsp active layer 36 and the p-type np cladding layer 38 are epitaxially grown.
次にＳｉＯ２のストライプ状マスクを形成した後、化学
エツチングを施しストライプ状メサａＯを形成する。こ
の後ストライプ状メサ４０の両側にｐ型■ｎｐブロッキ
ング層４２、ｎ型ＩｎＰブロッキング層４４を成長させ
てストライプ状メサ４０を埋め込み、この後ＳｉＯ２マ
スクを除去し、ｐ型ＩｎＰクラッド層３８及びｎ型Ｉｎ
Ｐブロッキング層４４上にｐ型Ｉ ｎ Ｇ ａＡ Ｓ
Ｐ、＠４５を成長させ、埋め込み型半導体レーザを形成
する。Next, after forming a striped mask of SiO2, chemical etching is performed to form a striped mesa aO. After that, a p-type np blocking layer 42 and an n-type InP blocking layer 44 are grown on both sides of the striped mesa 40 to bury the striped mesa 40. After that, the SiO2 mask is removed, and the p-type InP cladding layer 38 and n Type In
P-type I n GaA S on the P blocking layer 44
P, @45 is grown to form a buried semiconductor laser.
ｐ型ＩｎＧａＡＳＰ層４５上には、第１の金属層Ｔ１４
６、第２の金ＩＲＩＷＺｎ４８、第３の金属ＩＡＰｔ５
０、第４の金属層Ａｕ５２の多層電極５４を形成した。On the p-type InGaASP layer 45, a first metal layer T14 is formed.
6. Second gold IRIWZn48, third metal IAPt5
0. A multilayer electrode 54 of the fourth metal layer Au52 was formed.
熱処理により、第１の金属層１ｉ４６には第２の金属層
Ｚｎ４８が固相拡散して行き、ｐ型Ｉｒ１ＧａＡＳＰ層
４５にも７−ｎが拡散していることはいうまでもない。As a result of the heat treatment, the second metal layer Zn48 is solid-phase diffused into the first metal layer 1i46, and it goes without saying that 7-n is also diffused into the p-type Ir1GaASP layer 45.
この固相拡散を促進させるには、第１の金属層を多孔性
にすることが有効である。この実施例では、ｎ型ＩｎＰ
Ｍ板３２へのｎ型オーミック電極５６として、第１Ｂ多
孔性Ｔ ｉ １７１５８、第２層Ｇｅｔｌｕ６０、第３
層Ｐｔ膜６２、第４層Ａｕ膜６４の多層電極を形成した
。第１の多孔成金属膜５８は、低温蒸着、低真空度蒸着
、例えば基板温度１００ ’Ｃ以下、不活性雰囲気下で
１０’ Ｔｏｒｒ以下の条件、で形成することができる
。これににより、粒径の大きな多孔性膜となり、ｎ型ド
ーパント成分である第２の金属層６０のＧｅ元素を効果
的に第１の金属層５８とｎをＩｎＰ基板３２へ固相拡散
できる。このｎ型ドーパント成分としては、（３ｅのほ
かにＳｎ、ＳｉなどのＩＶ族元素を用いても同様でおる
。In order to promote this solid phase diffusion, it is effective to make the first metal layer porous. In this example, n-type InP
As the n-type ohmic electrode 56 to the M plate 32, the first layer B porous T i 17158, the second layer Getlu 60, and the third layer
A multilayer electrode including a layer Pt film 62 and a fourth layer Au film 64 was formed. The first porous metal film 58 can be formed by low-temperature deposition or low-vacuum deposition, for example, at a substrate temperature of 100'C or less and an inert atmosphere of 10' Torr or less. This results in a porous film with a large grain size, and the Ge element of the second metal layer 60, which is an n-type dopant component, can be effectively solid-phase diffused into the first metal layer 58 and the InP substrate 32. As this n-type dopant component, in addition to (3e), group IV elements such as Sn and Si may also be used.
また本発明は、上述のＧａ Ｉ ｎＡｓＰ／Ｉ ｎｐ系
の光半導体以外にＧａＡ Ｉ ＡＳ／ＧａＡＳ系のＩ−
Ｖ族半導体にも同様に適応できる。第３図は内部ストラ
イプ型半導体レーザを示す。ｐＷ Ｇ ａ△Ｓ塁板７０
上に内部狭窄の為のｎ型Ｇ ａ Ａ Ｓブロツキング層
７２を形成し、化学エツチングにより溝ストライプ７４
を形成後、ｐ型ＧａＡ Ｉ Ａｓクラット層７６、Ｇａ
Ａ Ｉ Ａｓ活性層７８、ｎ型ＧａＡＩＡＳクラッド５
８０．ｎＷＧａＡｓオミック層８２を順層形２する。こ
の後、ｎ Ｉｌｌ 電＄ｉ８４にはＣｒ８６、Ｇｅ８８
、Ｐｔ９０．Ａｕ９２の多層オーミック電極を、１）
（１１１１電極９４にはＴｉ９６、Ｚｎ９７、Ｐｔ９８
、Ａ ＩＪ ９９の多層オーミック電極を形成した。半
導体レーザはｎ ｔｌｔｌ電極８４側がヒートシンクに
マウントされた。In addition to the above-mentioned GaInAsP/Inp-based optical semiconductors, the present invention also applies to GaAI AS/GaAS-based I-
It can be similarly applied to V group semiconductors. FIG. 3 shows an internal stripe type semiconductor laser. pW G a△S base plate 70
An n-type GaAs blocking layer 72 for internal confinement is formed on top, and trench stripes 74 are formed by chemical etching.
After forming p-type GaAIAs crat layer 76, Ga
AIAs active layer 78, n-type GaAIAS cladding 5
80. The nWGaAs ohmic layer 82 is formed into a normal layer type 2. After this, Cr86 and Ge88 are added to nIll electric $i84.
, Pt90. Au92 multilayer ohmic electrode, 1)
(The 1111 electrode 94 contains Ti96, Zn97, Pt98
, A IJ 99 multilayer ohmic electrode was formed. The semiconductor laser was mounted on the heat sink on the ntltl electrode 84 side.
［発明の効果］
本発明によれば、オーミック性及び付着力が良好で、信
頼性の高い電極構造をもつ光半導体装置が得られる。[Effects of the Invention] According to the present invention, an optical semiconductor device having good ohmic properties and adhesion and a highly reliable electrode structure can be obtained.
第１図は本発明の一実施例の断面図、第２図は本発明の
他の実施例の断面図、第３図は更に本発明の他の実施例
の断面図である。
２・・・半導体基板、４・・・ｎ型クラッド層６・・・
活性層、８・・・ｎ型クラッド層１０・・・ｐ型キャッ
プ層、１６・・・ｐ型オーミック電極１８・・・第１の
金属層、２０・・・第２の金属、層２２・・・第３の金
属層、２４・・・第４の金属層２６・・・ＰＨ３層。FIG. 1 is a sectional view of one embodiment of the invention, FIG. 2 is a sectional view of another embodiment of the invention, and FIG. 3 is a sectional view of yet another embodiment of the invention. 2... Semiconductor substrate, 4... N-type cladding layer 6...
Active layer, 8... N-type cladding layer 10... P-type cap layer, 16... P-type ohmic electrode 18... First metal layer, 20... Second metal, layer 22. ...Third metal layer, 24...Fourth metal layer 26...PH3 layer.
Claims (8)
記第１導伝型半導体層上に形成されたＴｉあるいはＣｒ
からなる第１の金属層と、前記第１の金属層の上に形成
された前記第１導伝型半導体層の導伝型と同じ導伝型を
決定する元素を含む第２の金属層と、前記第２の金属層
の上に形成されたＰｔあるいはＰｄからなる第３の金属
層と、前記第３の金属層上にＡｕからなる第４の金属層
とを備えた光半導体装置。(1) A semiconductor chip including a first conductivity type semiconductor layer, and a Ti or Cr formed on the first conductivity type semiconductor layer.
a second metal layer containing an element that determines the same conductivity type as that of the first conductivity type semiconductor layer formed on the first metal layer; , an optical semiconductor device comprising: a third metal layer made of Pt or Pd formed on the second metal layer; and a fourth metal layer made of Au on the third metal layer.
を特徴とする特許請求の範囲第１項記載の光半導体装置
。(2) The optical semiconductor device according to claim 1, wherein the semiconductor chip has a heterojunction structure.
つ前記第２の金属層は少なくもとII族の金属を含むこと
を特徴とする特許請求の範囲第１項記載の光半導体装置
。(3) The light according to claim 1, wherein the first conductivity type semiconductor layer is a p-type semiconductor, and the second metal layer contains at least a Group II metal. Semiconductor equipment.
つ前記第２の金属層は少なくもとIV族の金属を含むこと
を特徴とする特許請求の範囲第１項記載の光半導体装置
。(4) The light according to claim 1, wherein the first conductive type semiconductor layer is an n-type semiconductor, and the second metal layer contains at least a group IV metal. Semiconductor equipment.
Åであることを特徴とする特許請求の範囲第１項記載の
光半導体装置。(5) The thickness of the first metal layer is 100 Å to 1000 Å.
2. The optical semiconductor device according to claim 1, wherein the optical semiconductor device is Å.
る特許請求の範囲第１項記載の光半導体装置。(6) The optical semiconductor device according to claim 1, wherein the first metal layer is porous.
型半導体層に拡散していることを特徴とする特許請求の
範囲第１項記載の光半導体装置。(7) The optical semiconductor device according to claim 1, wherein the metal constituting the second metal layer is diffused into the first conductivity type semiconductor layer.
体であることを特徴とする特許請求の範囲第１項記載の
光半導体装置。(8) The optical semiconductor device according to claim 1, wherein the first conductivity type semiconductor layer is a III-V group compound semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP86115725A EP0222395A1 (en) | 1985-11-13 | 1986-11-12 | Improvement in electrode structure of photosemiconductor device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60-252615 | 1985-11-13 | ||
| JP25261585 | 1985-11-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62276885A true JPS62276885A (en) | 1987-12-01 |
Family
ID=17239829
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61218021A Pending JPS62276885A (en) | 1985-11-13 | 1986-09-18 | Optical semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62276885A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5790577A (en) * | 1995-10-05 | 1998-08-04 | Nippondenso Co., Ltd. | High output semiconductor laser element having robust electrode structure |
-
1986
- 1986-09-18 JP JP61218021A patent/JPS62276885A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5790577A (en) * | 1995-10-05 | 1998-08-04 | Nippondenso Co., Ltd. | High output semiconductor laser element having robust electrode structure |
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