JPS62275382A - Magnetic bubble memory element - Google Patents

Abstract

PURPOSE:To improve the stable working characteristics of a magnetic bubble memory element by adding a 'Permalloy(R)' pattern to an ion implantation transfer path to partly improve a magnetic bubble transfer path which limits the working characteristics of the memory element. CONSTITUTION:An approximately T-shaped 'Permalloy(R)' pattern PT1 is provided between ion implantation transfer paths IP at an inner corner part CI of an ion implantation pattern area IPT. When magnetic bubbles are transferred to the part IC, a magnetic pole is formed on the pattern PT1 since this pattern PT1 is formed at the part CI. Thus the magnetic bubbles are affected by said magnetic pole and transferred smoothly to a large pattern PT.

Description

Detailed Description of the Invention 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a magnetic bubble memory element9, and particularly relates to a magnetic bubble transfer path of the 2S class such as an ion implantation transfer path and a permalloy transfer path. The present invention relates to a composite magnetic puzzle memory element in which the elements are provided in the same element.

[Conventional technology]

The transfer path of the magnetic bubble memory element includes a permalloy transfer path that transfers magnetic bubbles by magnetizing a permalloy thin film pattern with a rotating magnetic field that rotates within the pattern plane, and a permalloy transfer path that transfers magnetic bubbles by magnetizing a permalloy thin film pattern with a rotating magnetic field that rotates within the pattern plane. An ion implantation transfer path is known in which magnetic bubbles are transferred by a charged wall that is magnetized by a rotating magnetic field and generated at the boundary of an ion implantation pattern (US Pat. No. 3,618,054).

The permalloy transfer path has approximately 2 bubble diameters between magnetic puzzle transfer patterns to prevent backward movement of magnetic bubble transfer.
Since a gap of 73 mm or less is required, there is a limit to increasing the density of the device due to restrictions on pattern formation using photo+7 lithography technology.

In the ion implantation transfer path, a charged wall generated at the boundary between the ion implantation area and the non-ion implantation area is used to transfer the bubbles, so there is no need for a gap to prevent the bubbles from moving backwards. Can transmit tiny bubbles.

Therefore, we adopted an ion implantation transmission line suitable for high density in the minor loop section that stores and holds information, and a permalloy transmission line suitable for this in the information input/output section, which is a so-called 281 type magnetic puzzle transfer path. The structure of the composite magnetic bubble memory element used in conjunction with the
This method has been proposed as a method for realizing high-speed inversion (Japanese Patent Application Laid-Open No. 186287/1987).

[Problem that the invention seeks to solve]

However, in the composite magnetic bubble memory element configured in this way, various functional drive units are coupled to the magnetic bubble transfer path, and when the shaving operation is performed by these function drive units, these functions are There has been a problem in that the so-called operational characteristics of the functional drive unit coupled to the permalloy transfer path and the ion implantation transfer path, which allow stable operation, are limited.

SUMMARY OF THE INVENTION An object of the present invention is to provide a magnetic puzzle memory device that can improve stable operation characteristics by improving a part of the magnetic bubble transfer path that limits operation characteristics.

[Means for solving problems]

According to one embodiment of the present invention, a magnetic bubble memory device is provided in which the operating characteristics of the ion implantation transfer path are improved by adding a permalloy pattern to the ion implantation transfer path.

According to another embodiment of the present invention, an ion implantation pattern is added to the permalloy transfer path to improve the operating characteristics of the permalloy transfer path, thereby providing a magnetic bubble memory device.

[Effect]

In the present invention, the transfer operation of magnetic bubbles is assisted by the permalloy pattern in the ion implantation transfer path, and the transfer operation of the magnetic bubbles is assisted by the ion implantation pattern in the permalloy transfer path.

〔Example〕

Next, embodiments of the present invention will be described in detail using the drawings.

FIG. 4 is an enlarged plan view for explaining the magnetic bubble memo IJIE according to the present invention. In the figure, m is a minor loop that stores information, RML is a read major line that transfers read information, and WNL is a light major line that transfers omitted information. Further, D is a bubble detector that converts magnetic bubbles into electrical signals, G is a bubble generator that generates magnetic bubbles, and R is a replicate gate that copies or transfers information of the minor loop m to the read measure line RML. This is a transfer gate that transfers the information of the light major line y WML to the minor loop m, or a swap gate that exchanges information between the two, which simultaneously sweeps the information of the minor loop m to the major line WML at the same time as the transfer. 1. GR surrounding these outer peripheries is a guardrail to prevent magnetic bubbles from entering from the outer periphery, BP is a bonding pad for connecting these transfer circuits with external circuits, and MP is a monitor pattern. In addition, the resilicate gut R, swap game) T and bubble generator G are controlled by whether or not a current is passed in a certain direction through a conductor in a separate layer arranged in a special relationship with the permalloy transfer pattern. The conductor portion is shown by a thick solid line 9, and the thin solid line shows the permalloy transfer pattern.

Further, in the same figure, the area within the minor loop m indicated by the broken line is formed by an ion implantation transfer path, and the area outside thereof is formed by a permalloy transfer path.

FIG. 5 is an enlarged plan view of a main part showing the connecting portion between the minor loop m and the light mesh line WML explained in FIG. 4, and the same reference numerals as in FIG. 4 indicate the same parts. In the figure, a minor loop m is formed by an ion implantation transfer path IP consisting of an ion implantation pattern EPT formed in a non-ion implantation region within an ion implantation region ION in which ions are partially implanted into the surface of the bubble magnetic material. The transfer portion in the other area is formed of a permalloy transfer portion P made of a permalloy pattern PT.

The terminal end of this permalloy transfer section P is coupled to the write mesh line WML via a conductor pattern CON made of a non-magnetic material constituting the swap gate T described above, and a predetermined pulse current is passed through this conductor pattern CON. Finally, an operation is performed to exchange old bubble information and new bubble information in the minor loop m.

FIG. 6 is an enlarged plan view of a main part showing the connecting portion between the minor loop m and the replicate gate R explained in FIG. 4, and the same reference numerals as in FIG. 4 indicate the same parts. In the figure, the minor loop m is formed by the ion-implanted transfer path IP as described above, and the transfer portion in the outer region is formed by the permalloy transfer portion P consisting of the permalloy pattern PT.

The tip of this permalloy transfer part P is connected to the read measure line RML via a conductor pattern CON made of a non-magnetic material constituting the aforementioned replicate gate R, and a predetermined pulse current is passed through this conductor pattern CON. As a result, the operation of dividing and duplicating the read bubble information in the minor loop m onto the read major line RML is performed.

When a magnetic bubble memory device is operated as a memory using such many components, there are weak points (weak points) that limit stable operation characteristics.

Therefore, the magnetic bubble memory element according to the present invention has a fifth
In the self-turning silicon corner CI of the ion implantation pattern IPT region shown in the figure, a roughly T-shaped permaloid permoleuper fi-yPT1 is installed between each ion implantation transfer path IP as shown in the enlarged plan view of the main part in Figure 1. It is something. This permalloy pattern PT1 is a permalloy transfer part P shown in FIG.
and the light mesh line WML are formed simultaneously in the same process.

According to such a configuration, the ion implantation transfer path IPT
When the magnetic puzzle is transferred to the self-turning chicoran part CI, since a nearly T-shaped permalloy pattern PTI is formed in this part, a magnetic pole is formed in this permalloy pattern PTI, and the magnetic bubble is not influenced by this magnetic pole. Then, it is smoothly transferred to the large permalloy pattern PT.

FIG. 2 shows another embodiment of the magnetic bubble memory device according to the present invention. This figure is an enlarged plan view of the outer shear corner Co of the ion implantation transfer path IP that constitutes the minor loop m shown in Fig. ag6.
On the inside of the ion implantation pattern IPT, a crescent-shaped permalloy pattern PT2 is formed. This permalloy pattern PT2 is similarly formed simultaneously with the pattern formation of the permalloy transfer path P and replicate gate R shown in FIG.

According to such a configuration, the ion implantation pattern IP
When the magnetic bubble is transferred to the outer corner part CO of T,
Since a substantially crescent-shaped permalloy pattern PT2 is formed in this portion, a magnetic pole is formed in this permalloy pattern PT2, and the magnetic bubble is controlled under the influence of this magnetic pole and transferred well.

FIG. 3 shows still another embodiment of the magnetic bubble memory device according to the present invention. This figure is an enlarged plan view of a main part showing a corner part of the guardrail GR of the magnetic bubble memory element shown in FIG. 4. In the same figure, guardrail G
In R, permalloy transfer paths P made of permalloy patterns PT are arranged in three rows to prevent extra magnetic puzzles from entering from the outer periphery of the magnetic puzzle memory element. In the present invention, a band-shaped ion implantation pattern IPT is formed along the length direction on the outer peripheral portion of the guardrail GR. This ion implantation pattern IPT is also shown in Figures 5 and 6.
It is formed simultaneously with the formation of the ion implantation pattern IPT shown in the figure.

According to this configuration, by providing the band-shaped ion implantation putter yIPT on the outside of the guardrail GR, the infiltration of extra magnetic bubbles from the outside is further prevented, and the function of the guardrail GR is further improved. Can be done.

〔Effect of the invention〕

As explained above, according to the present invention, by adding the permalloy pattern to the ion implantation transfer path, and by adding the ion implantation pattern to the permalloy transfer path,
The weak points of the ion implantation transfer path and the permalloy transfer path are compensated for, stable operation characteristics are improved, and extremely excellent effects are obtained in that a magnetic bubble memory element with high quality and reliability can be obtained.

[Brief explanation of the drawing]

FIG. 1 is an enlarged plan view of a main part of a minor loop corner showing an embodiment of the magnetic bubble memory element according to the present invention, and FIG. 2 is an enlarged plan view of a main part of a minor loop corner showing another embodiment of the present invention. 3 is an enlarged plan view of a guardrail corner showing still another embodiment of the present invention, FIG. 4 is a plan view showing the configuration of a magnetic bubble memory element according to the present invention, and FIG.
FIG. 6 is an enlarged plan view of the main part showing the minor loop corner part of FIG. 4. m...Minor loop, ■ON...Ion implantation area, IPT...Ion implantation pattern, I
P...Ion implantation transfer path, PT, PTl,
P・T2 ・ψ・Ko permalloy pattern, P...e
Hermalloy transfer path, CI...-Figure 1 Figure 4

Claims (1)

[Claims] 1. The input/output section of the magnetic bubble is composed of a permalloy transfer path, the minor loop section for storing and retaining the magnetic bubble is composed of an ion implantation transfer path, and a part of the ion implantation transfer path is made of permalloy. A magnetic bubble memory element characterized by an added pattern. 2. The input/output section of the magnetic bubble is configured with a permalloy transfer path, the minor loop section for storing and retaining the magnetic bubble is configured with an ion implantation transfer path, and an ion implantation pattern is added to a part of the permalloy transfer path. Features a magnetic bubble memory element.