JPS62262348A - Image pickup tube target - Google Patents
Image pickup tube targetInfo
- Publication number
- JPS62262348A JPS62262348A JP61104643A JP10464386A JPS62262348A JP S62262348 A JPS62262348 A JP S62262348A JP 61104643 A JP61104643 A JP 61104643A JP 10464386 A JP10464386 A JP 10464386A JP S62262348 A JPS62262348 A JP S62262348A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photoconductive
- holes
- image pickup
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009825 accumulation Methods 0.000 claims abstract description 15
- 238000005036 potential barrier Methods 0.000 claims abstract description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 14
- 238000003384 imaging method Methods 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 230000006798 recombination Effects 0.000 claims description 5
- 238000005215 recombination Methods 0.000 claims description 5
- 238000010894 electron beam technology Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 15
- 239000012528 membrane Substances 0.000 abstract 9
- 230000004888 barrier function Effects 0.000 abstract 1
- 230000003321 amplification Effects 0.000 description 15
- 238000003199 nucleic acid amplification method Methods 0.000 description 15
- 238000002347 injection Methods 0.000 description 12
- 239000007924 injection Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 9
- 230000000903 blocking effect Effects 0.000 description 7
- 230000005684 electric field Effects 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000005546 reactive sputtering Methods 0.000 description 5
- 206010047571 Visual impairment Diseases 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 235000012976 tarts Nutrition 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は光導電型撮像管に係り、特に高感度の撮像管を
得るに好適な撮像管ターゲットに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a photoconductive image pickup tube, and particularly to an image pickup tube target suitable for obtaining a highly sensitive image pickup tube.
従来一般に用いられている光導電型撮像管の基本的ター
ゲラ１−構造を第５図に示す、光導電膜１の電子ビーム
走査側には、電子の走行性が悪い層を設けるか又は先導
？ｌｉ膜との間にポテンシャル障壁を設けることにより
、走査電子が蓄積されろ電子蓄積層２が形成されている
。そのため、カソードから放出されて走査面に到達した
走査電子は、走査面の電位がカソード電位に平衡して走
査電子が走査面に到達できなくなるまで電子Ｍ′！Ｉｔ
ｍ２に蓄積されて負の空間電荷を形成する。透光性導電
膜３と光導電膜１の間には正孔の光導電膜への注入を阻
止する層４が設けられている。このように光導電膜１に
外部から電子や正孔が注入されないような阻止型構造は
、例えばビジコンのような注入型構造に比べて暗電流や
残像が小さいという利点がある１以上のような構造の撮
像管ターゲットにおいて、透光性導電膜ｔ膜１をカソー
ド電位よりも高い電位にすると、光導電膜１内には光入
射側の電位が走査側よりも高いような電界が生じる。透
光性絶縁基板５を通して光が入射すると、光導電膜１中
で吸収されて電子・正孔対が発生し、上記電界によって
電子は光入射側に正孔は走査面側にそれぞれ走行し、電
子は透光性導電膜３から流出する。一方、正孔は上記電
子蓄積層２に到達して蓄積されている電子と再結合する
。これによって光が入射した部分に対応する走査面の電
位はカソード電位よりも高くなる０次の走査時に表面電
位はカソード電位に戻るが、その時正孔と再結合して消
滅した分だけ電子蓄積Ｍ２に電子が補充され、それによ
る電流値が信号となる。従って、このような従来一般に
用いられている方式の撮像管では。The basic structure of the target layer 1 of a photoconductive image pickup tube commonly used in the past is shown in FIG. An electron storage layer 2 is formed in which scanning electrons are accumulated by providing a potential barrier between the lithium layer and the li film. Therefore, the scanning electrons emitted from the cathode and reaching the scanning surface will continue to hold electrons M'! until the potential of the scanning surface is balanced with the cathode potential and the scanning electrons can no longer reach the scanning surface. It
m2 to form a negative space charge. A layer 4 is provided between the transparent conductive film 3 and the photoconductive film 1 to prevent holes from being injected into the photoconductive film. A blocking type structure in which electrons and holes are not injected into the photoconductive film 1 from the outside has the advantage of having smaller dark current and afterimage than an injection type structure such as a bidicon, for example. In the image pickup tube target of this structure, when the light-transmitting conductive film 1 is set to a higher potential than the cathode potential, an electric field is generated in the photoconductive film 1 such that the potential on the light incident side is higher than on the scanning side. When light enters through the transparent insulating substrate 5, it is absorbed in the photoconductive film 1 and generates electron-hole pairs, and the electric field causes the electrons to travel to the light incident side and the holes to the scanning surface side, respectively. Electrons flow out from the transparent conductive film 3. On the other hand, the holes reach the electron storage layer 2 and recombine with the stored electrons. As a result, the potential of the scanning surface corresponding to the part where the light is incident becomes higher than the cathode potential.During the 0th order scanning, the surface potential returns to the cathode potential, but at that time, the electrons accumulated by the amount recombined with holes and annihilated M2 Electrons are replenished, and the resulting current value becomes a signal. Therefore, in the image pickup tube of such a conventionally commonly used type.
入射光によって励起されて電子Ｗ積層に走行してきた正
孔の数と同等の信号電流が検出されるため、原理的に光
導電ターゲットにおける増幅作用はなし１゜
これに対して、増幅作用を持つ撮像管として。Since a signal current equivalent to the number of holes excited by the incident light and traveling to the electron W stack is detected, there is no amplification effect in the photoconductive target in principle.1 In contrast, imaging with an amplification effect as a tube.
非晶質Ｓａよりなる光導ｉ！Ｉ！膜の走査側に、Ａｓ及
びＢｒをドープしたＳｓよりなる電子Ｗ積層とこの電子
蓄積層よりもビーム走査側にありＡｓ及びＮａをドープ
したＳｅよりなる正孔蓄積層とを設けた構造が提案され
ている。 （１９３５年テレビジョン学会全国大会予
稿集ｐ２５）この撮ａ管は、電子蓄［ｐ！Ｉ及び正孔Ｗ
積層における電子の寿命時間を走行時間よりも長くする
ことにより、走査電子ビームが当たっている時、正孔が
再結合するまでの間走査電子が光導電膜に注入されて増
幅効果を生じるものである。Light guide made of amorphous Sa! I! A structure is proposed in which an electron W stack made of Ss doped with As and Br is provided on the scanning side of the film, and a hole accumulation layer made of Se doped with As and Na is provided on the beam scanning side of the electron storage layer. has been done. (Proceedings of the 1935 National Conference of the Television Society, p. 25) This camera tube is an electronic storage [p! I and hole W
By making the lifetime of the electrons in the stack longer than the transit time, when the scanning electron beam hits, the scanning electrons are injected into the photoconductive film until the holes recombine, producing an amplification effect. be.
また、光導電膜の光入射側に不純物をドープした層を設
けることによって、透光性導電膜からのキャリア注入に
よる増幅作用を有するような撮像素子を得ることも提案
されている。 （１９８５年テレビジョン学会全国大
会予稿集ｐ２７）
以上のような従来例による撮像管では、入射光によって
励起された正孔に対しては、その走行を妨げることがな
いような構造を特徴としており、入射光によって生じた
正孔は阻止されることなく走査面側の電子Ｍ積層に注入
され得るようになっていた。It has also been proposed to provide an imaging element having an amplification effect due to carrier injection from the transparent conductive film by providing a layer doped with impurities on the light incident side of the photoconductive film. (Proceedings of the 1985 National Television Society of Japan Conference, p. 27) The conventional image pickup tube described above is characterized by a structure that does not impede the movement of holes excited by incident light. , holes generated by incident light could be injected into the electron M stack on the scanning surface side without being blocked.
上記従来技術のうち、光導電膜の走査面側に不純物をド
ープした層を設け、走査時に正孔が電子と再結合して消
滅するまでの間に走査電子が光導電膜に注入されるよう
にした撮像管では、入射光によって生じた正孔は電子蓄
積層を再結合することなく走り抜けないと正孔蓄積層に
到達できず、且つ走査電子は正孔７７積層と電子Ｊ９積
層の両方を、蓄積されることも再結合することもなく走
り抜けないと増幅効果に寄与しない、そのため、暗電流
や残像等の特性を損うことなく高い増幅効率が得られて
しかも連続して入射してくる光のもとでも安定に動作し
得るような材料を選ぶのがむずかしいという問題点があ
った。Among the above conventional techniques, a layer doped with impurities is provided on the scanning surface side of the photoconductive film so that scanning electrons are injected into the photoconductive film during scanning until holes recombine with electrons and disappear. In an image pickup tube with a 300-millimeter structure, holes generated by incident light cannot reach the hole storage layer unless they pass through the electron storage layer without recombining, and the scanning electrons pass through both the hole 77 stack and the electron J9 stack. , it does not contribute to the amplification effect unless it passes through without being accumulated or recombined.Therefore, high amplification efficiency can be obtained without impairing characteristics such as dark current and afterimage, and it is incident continuously. The problem was that it was difficult to select materials that could operate stably even under light.
一方、透光性導電膜からのキャリア注入による増幅作用
を有する撮像素子の場合には、光導電膜の光入射側、即
ち短波長光をほとんど吸収する領域に不純物ドープによ
って増幅効果のための構造を形成するため、短波長側で
の増幅効率が落ちるという問題点があった。On the other hand, in the case of an image sensor that has an amplification effect by carrier injection from a transparent conductive film, a structure for an amplification effect is created by doping impurities on the light incident side of the photoconductive film, that is, the region that absorbs most of the short wavelength light. , there was a problem in that the amplification efficiency on the short wavelength side decreased.
本発明の目的は、上記問題点を解決し、入射光によって
励起されたキャリアの数より多い数のキャリアを信号と
して検出し、ｗｉ像骨管ターゲット自体増幅効果を有す
る高感度の撮像管を得ることにある。An object of the present invention is to solve the above-mentioned problems, to detect as a signal a number of carriers greater than the number of carriers excited by incident light, and to obtain a highly sensitive imaging tube that has an amplification effect on the bone canal target itself. There is a particular thing.
上記目的は、先導ｆｆＬ膜の走査面側に正孔に対するポ
テンシャル障壁又は正孔捕獲層を設けることにより、入
射光によって励起されて走査面側に走行してくる正孔が
電子８１１１層に到達する前に蓄積されるような正孔蓄
積層を形成し、且つ上記正孔蓄積層における電子の平均
走行時間が平均再結合時間よりも短いようにすることで
達成される。The above purpose is to provide a potential barrier for holes or a hole trapping layer on the scanning surface side of the leading ffL film, so that holes that are excited by incident light and travel toward the scanning surface side reach the electron 8111 layer. This is achieved by forming a hole storage layer that is previously stored, and by making the average transit time of electrons in the hole storage layer shorter than the average recombination time.
以下、本発明による撮像管ターゲットの作用について図
面を用いて説明する。第１図は本発明による撮像管ター
ゲットの構造を示す図である。図中２は、電子の走行性
が悪い材料を用いるか又は電子に対するポテンシャル障
壁を設けることにより電子蓄積機能を持たせた電子蓄積
層である。また４は透光性導電膜３からの正孔の注入を
阻止する正孔注入阻止層である。さらに本発明による撮
像管では、図中６に示したように光導電［１と電子蓄積
層２の間に正孔に対するポテンシャル障壁又は正孔捕獲
層を設けることにより正孔蓄積層６を形成してあり、走
査面側に走行する正孔は電子蓄積Ｐ！ｊ２に注入して再
結合せずに正孔蓄積Ｊｌ！Ｊ６に蓄積される。電子ビー
ムによる走査を行うと、走査面の電位がカソード電位に
等しくなるまで走査電子が電子蓄積層２に蓄積されるが
、このとき走査面電位がカソード電位に等しくなるため
の電子の蓄ＭｆＱは上記正孔蓄積層６に蓄積されている
正孔の量ｑが大きいほど大きくなる。そのため。Hereinafter, the operation of the image pickup tube target according to the present invention will be explained using the drawings. FIG. 1 is a diagram showing the structure of an image pickup tube target according to the present invention. In the figure, 2 is an electron storage layer that has an electron storage function by using a material with poor electron mobility or by providing a potential barrier to electrons. Further, 4 is a hole injection blocking layer that blocks injection of holes from the transparent conductive film 3 . Furthermore, in the image pickup tube according to the present invention, as shown in 6 in the figure, a hole accumulation layer 6 is formed by providing a potential barrier for holes or a hole trapping layer between the photoconductive layer 1 and the electron accumulation layer 2. , and the holes traveling toward the scanning surface are electron accumulation P! Holes are accumulated Jl without being injected into j2 and recombined! It is stored in J6. When scanning with an electron beam is performed, scanning electrons are accumulated in the electron storage layer 2 until the potential of the scanning surface becomes equal to the cathode potential. At this time, the accumulation of electrons MfQ for the scanning surface potential to become equal to the cathode potential is The larger the amount q of holes accumulated in the hole accumulation layer 6, the larger the amount. Therefore.
動作開始時の入射光によって９が増大するにつれて蓄Ｍ
ｆ！Ｅ子量Ｑも増大する。電子蓄積層２において電子を
膜内に注入させるような向きの電界は、正孔蓄積量ｑが
大きいほど大きいため、ｑがある値ｑｏ以上になると電
子蓄積層２の電子が光導電膜ｌの方向に注入してその一
部が正孔蓄積６において正孔と再結合してｑを減少させ
る。従って。As 9 increases due to the incident light at the start of operation, the storage M
f! The E molecular weight Q also increases. The electric field in the direction that injects electrons into the film in the electron storage layer 2 increases as the hole storage amount q increases. Therefore, when q exceeds a certain value qo, the electrons in the electron storage layer 2 are injected into the photoconductive film l. A part of the injected holes recombines with holes in the hole storage 6 and reduces q. Therefore.
走査面の電位がカソード電位に等しくなったとき正孔蓄
積層６にＶＩｆＩされている正孔の量はｑ。に平衡する
。この状態で透光性絶縁基板５を通して光が入射すると
、光導電膜１で吸収されて電子・正孔対が発生し、電子
は光入射側に走行して透光性導電［３から流出する。一
方、正孔は走査面側に走行して正孔蓄積層６に蓄積され
るため、正孔蓄積量は上記平衡値ｑｏよりも大きい値ｑ
ｏ＋Δｑとなる。従って、次の走査時には、正孔蓄積量
が９０に戻るまで電子蓄積層２から電子が光導電膜１の
方向に注入される。上述の如く正孔？？ｆＪｍ６は電子
の平均走行時間が平均再結合時間よりも短いようにして
おく、そのため走査時に正孔Ｍｆ！を層６に注入された
電子が１個の正孔と再結合する間に２個以上の電子が電
子蓄積層２から注入される。When the potential of the scanning surface becomes equal to the cathode potential, the amount of holes VIfI in the hole storage layer 6 is q. equilibrium. When light enters through the transparent insulating substrate 5 in this state, it is absorbed by the photoconductive film 1 and electron-hole pairs are generated, and the electrons travel toward the light incident side and flow out from the transparent conductor [3]. . On the other hand, since the holes travel toward the scanning surface side and are accumulated in the hole accumulation layer 6, the amount of accumulated holes is a value q larger than the equilibrium value qo.
It becomes o+Δq. Therefore, during the next scan, electrons are injected from the electron storage layer 2 toward the photoconductive film 1 until the hole storage amount returns to 90. A hole as mentioned above? ? fJm6 is set so that the average transit time of electrons is shorter than the average recombination time, so that holes Mf! While the electrons injected into the layer 6 recombine with one hole, two or more electrons are injected from the electron storage layer 2.
従って、正孔のＭ積置が平衡値ｑ。に戻って電子の注入
が止まり、走査面電位がカソード電位に等しくなるまで
に、入射光によって生じて走行してきた正孔の量Δｑよ
りも多い数の走査電子が撮像管ターゲットに入射して、
その分だけ信号が増幅されて高い感度を得ることができ
る。Therefore, the M accumulation of holes is the equilibrium value q. By the time the injection of electrons stops and the scanning surface potential becomes equal to the cathode potential, a number of scanning electrons greater than the amount of holes Δq generated by the incident light and traveling have entered the image pickup tube target.
The signal is amplified by that amount and high sensitivity can be obtained.
本発明で特徴的なことは、上述したように、正孔８８層
６を電子蓄積層２よりも光入射側に設けて、蓄積された
正孔によって電子蓄積層の電子を光導電膜に向かって注
入させるような電界を形成したことである。As described above, the characteristic feature of the present invention is that the hole 88 layer 6 is provided on the light incident side of the electron storage layer 2, and the accumulated holes direct electrons in the electron storage layer toward the photoconductive film. The idea is to create an electric field that causes the injection.
本発明による撮像管ターゲットでは、正孔７１積層にお
いて電子が再結合せずに光導電膜まで走行する確率がＯ
より大きければ増幅作用が生じるが、特に正孔蓄積層に
おける電子の平均走行時間が平均再結合時間よりも短い
場合に増幅率が大きくなる。また、正孔蓄積層における
平均再結合時間を１画素走査時間よりも短くすることに
よって蓄積された正孔による残像が生じないようにする
ことができる。In the image pickup tube target according to the present invention, the probability that electrons will travel to the photoconductive film without recombining in the stack of holes 71 is O.
If it is larger, an amplification effect occurs, but especially when the average transit time of electrons in the hole storage layer is shorter than the average recombination time, the amplification factor becomes large. Further, by making the average recombination time in the hole accumulation layer shorter than the one-pixel scanning time, it is possible to prevent an afterimage caused by accumulated holes from occurring.
なお、本発明による搬像管ターゲットでは蓄積電子の注
入によって増幅効果を得るため、光導電膜中を電子がス
ムーズに走行することが望ましい。Note that in the image carrier target according to the present invention, since an amplification effect is obtained by injecting accumulated electrons, it is desirable that the electrons travel smoothly through the photoconductive film.
従って、光導電膜に水素化非晶質シリコン（ａ −８ｉ
：Ｈ）のように電子、正孔ともに走行性が良い材料を用
いると一層効果がある。Therefore, hydrogenated amorphous silicon (a-8i
It is even more effective to use a material with good mobility for both electrons and holes, such as :H).
以下１本発明の実施例を図面を用いて説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第２図は本発明の第１の実施例における撮像管ターゲッ
トの断面図である６透光性ガラス基板５上にＣＶＤ法に
より酸化錫を主体とする透光性導電膜３を形成する６つ
ぎに上記透光性導電膜３上に反応性スパッタリングによ
ってＳｉＯ２よりなる正孔注入阻止層４を堆積したのち
、高純度Ｓｉをターゲットに使用した高周波スパッタ装
置内に上記基板を設置し、上記スパッタ装置内を１×Ｌ
Ｏ−’Ｔｏｒｒ以下の高真空に排気してＡｒおよびＨ
ｚの混合ガスを導入し、上記装置内を５ＸＩＱ”’４〜
５ Ｘ １０−８Ｔｏｒｒの圧力にする。上記混合ガス
中の水素の濃度は３０〜６５％とする。上記基板温度を
１５０〜３００℃に設定したのち反応性スパッタリング
を行い、透光性等電膜３および正孔注入阻止ＲＩＪ４が
形成された載板上に、膜厚約２μｍのｎ−８ｉ：Ｈｌｉ
よりなる光導電膜１を形成する。FIG. 2 is a cross-sectional view of an image pickup tube target in the first embodiment of the present invention. A transparent conductive film 3 mainly made of tin oxide is formed on a transparent glass substrate 5 by the CVD method. After depositing a hole injection blocking layer 4 made of SiO2 on the transparent conductive film 3 by reactive sputtering, the substrate was placed in a high frequency sputtering device using high purity Si as a target, and the substrate was placed in a high frequency sputtering device using high purity Si as a target. 1 x L inside
Evacuate to high vacuum below O-'Torr and remove Ar and H.
Introduce the mixed gas of
Bring the pressure to 5 x 10-8 Torr. The concentration of hydrogen in the mixed gas is 30 to 65%. After setting the substrate temperature to 150 to 300°C, reactive sputtering is performed, and n-8i:Hli with a thickness of approximately 2 μm is placed on the mounting plate on which the transparent isoelectric film 3 and the hole injection blocking RIJ 4 are formed.
A photoconductive film 1 is formed.
つぎに上記基板を蒸着ボートに８８を入れた真空蒸着装
置内に移動し、上記蒸着装置内を３×１０”−’Ｔｏｒ
ｒの圧力にして、上記光導電膜１の上に非晶ＪＦｊＳ
ｓよりなる層２を約１１００ｎ堆積する。Next, the above-mentioned substrate was moved into a vacuum evaporation apparatus in which 88 was placed in the evaporation boat, and the inside of the above-mentioned evaporation apparatus was heated to 3×10''-'Tor.
Amorphous JFjS is deposited on the photoconductive film 1 at a pressure of r.
A layer 2 of about 1100 nm is deposited.
以上のようにして作られた光導電ターゲラ！−を電子銃
と結合させ、管内を真空排気したのち封止して本実施例
の撮像管を得た。Photoconductive targetera made as above! - was combined with an electron gun, the inside of the tube was evacuated, and then sealed to obtain the imaging tube of this example.
本実施例による方法で作成したａ−３ｉ：ＨとＳａは禁
制帯幅がほぼ等しく、ａ子親和力はＳａの方がａ−３ｉ
：Ｈよりも約０．４ ｅＶ大きい。a-3i:H and Sa created by the method according to this example have almost the same forbidden band width, and the a-3i affinity of Sa is higher than that of a-3i.
: Approximately 0.4 eV larger than H.
そのため、光ｆ［膜とＳｅ層の間には光導電膜から走査
側に走行する正孔および走査面から光導電膜に走行しよ
うとする電子に対してそれぞれ約０．４ ｅＶの高さ
のポテンシャル障壁が形成されている。従つ°Ｃ本本実
側ではＳｅ層によって走行を阻止された正孔が光導電膜
の走査側の端部に傳積されてこれが正孔蓄積層６となり
、Ｓｅ層が電子蓄積層２となる。Therefore, the light f [between the film and the Se layer has a height of about 0.4 eV for holes traveling from the photoconductive film to the scanning side and electrons trying to travel from the scanning surface to the photoconductive film, respectively. A potential barrier is formed. Therefore, on the real side, the holes whose travel is blocked by the Se layer are accumulated at the scanning side end of the photoconductive film, and this becomes the hole storage layer 6, and the Se layer becomes the electron storage layer 2. .
次に本発明の第２の実施例について説明する。Next, a second embodiment of the present invention will be described.
第３図は本発明の第２の実施例によるｍａ管メタ−ゲッ
ト断面図である。透光性ガラス基板５上に酸化インジウ
ムを主体とする透光性導電膜３を形成したのち、第１の
実施例と同様にして５ｉＯｚよりなる正孔注入阻止ＮＪ
４およびａ−８ｉ：Ｈよりなる光導電膜１を堆積する。FIG. 3 is a sectional view of the MA tube metal gett according to the second embodiment of the present invention. After forming a transparent conductive film 3 mainly made of indium oxide on a transparent glass substrate 5, a hole injection blocking NJ made of 5iOz was formed in the same manner as in the first embodiment.
4 and a-8i: A photoconductive film 1 consisting of H is deposited.
つづいて上記ａ−３ｉ：）Ｉを堆積したスパッタ装置内
をｌＸ１．０−”Ｔｏｒｒ以下の高真空に排気したのち
、Ａｒおよび０２の混合ガスを導入して上記装置内を約
２．５ ×１０−’Ｔｏｒｒの圧力にする。混合ガス中
の酸素の濃度は約７５％とした。基板温度を約２００℃
に設定して反応性スパッタリングを行い、上記基板のａ
−８ｉ：Ｈ光導電膜１の上に約１０ｎｍの厚さまで５ｉ
Ｏｚ層７を堆積する。つぎに上記基板を真空蒸着装置内
に設置し、約１ 、５ Ｘ １０”−”ＴｏｒｒのＡｒ
ガス中で蒸着によって多孔質Ｃｅ０ｚよりなる電子蓄積
層２を堆積する１以上のようにして作られた光導電ター
ゲットを電子銃と結合させ。Next, the inside of the sputtering apparatus in which the above a-3i:) I was deposited was evacuated to a high vacuum of 1.0-'' Torr or less, and a mixed gas of Ar and 02 was introduced to create a vacuum of about 2.5 × The pressure was set at 10-'Torr.The concentration of oxygen in the mixed gas was set at about 75%.The substrate temperature was set at about 200°C.
Perform reactive sputtering with the setting of
-8i: 5i on the H photoconductive film 1 to a thickness of about 10 nm
Deposit an Oz layer 7. Next, the above-mentioned substrate was placed in a vacuum evaporation apparatus, and Ar
A photoconductive target prepared as in one or more above, on which an electron storage layer 2 of porous CeOz is deposited by vapor deposition in a gas, is coupled to an electron gun.
管内を真空排気したのち封止して本実２の実施例の撮像
管を得た。The inside of the tube was evacuated and then sealed to obtain the imaging tube of Example 2.
本実施例で光導電膜１と電子蓄積層２の間に堆積しであ
る５ｉＯｚは、禁制帯幅がａ−３ｉ：Ｈより広い絶縁体
であり、正孔に対するポテンシャル障壁層として働く、
また多孔質Ｃ８０２は電子が走行しにくいため電子ＭＭ
ｍとして働く、光導電膜中で入射光によって励起されて
走行してきた正孔はＳ ｉ Ｏｘ層７によって走行を阻
止され、光導電膜の走査側の端部６に蓄禎される。これ
により上記５ｉＯｚ層２には強い電界が印加された状態
となって電子蓄積層２からの電子の注入が起こり増幅作
用を生じる。なお、正孔に対するポテンシャル障壁層と
しては、水素と燐や砒素等Ｖｂ族元素を含有する非晶質
シリコンなどのｎ型半導体層を用いても好適である。こ
の場合例えば非晶質シリコンに燐をドープするには、上
記光導電膜を堆積するスパッタ装置内にＰＨａガスを混
入してＰを１１００ｐｐ以下含有せしめるとよい。さら
に、電子蓄積層としては多孔質５ｂｚＳｓも良好であっ
た。In this example, 5iOz deposited between the photoconductive film 1 and the electron storage layer 2 is an insulator with a forbidden band width wider than that of a-3i:H, and acts as a potential barrier layer for holes.
In addition, porous C802 is difficult for electrons to travel, so electron MM
The holes excited by the incident light in the photoconductive film and traveling therein are blocked from traveling by the SiOx layer 7, and are accumulated at the scanning side end 6 of the photoconductive film. As a result, a strong electric field is applied to the 5iOz layer 2, and electrons are injected from the electron storage layer 2, resulting in an amplification effect. Note that as the potential barrier layer for holes, it is also suitable to use an n-type semiconductor layer such as amorphous silicon containing hydrogen and a Vb group element such as phosphorus or arsenic. In this case, for example, in order to dope amorphous silicon with phosphorus, it is preferable to mix PHa gas into the sputtering apparatus in which the photoconductive film is deposited so that the amorphous silicon contains 1100 pp or less of P. Furthermore, porous 5bzSs was also good as an electron storage layer.
つぎに本発明の第３の実施例について説明する。Next, a third embodiment of the present invention will be described.
第４図は本発明の第３の実施例による撮像管ターゲット
の断面図である。透光性ガラス基板５上に酸化錫を主体
とする透光性導電膜３を堆積したのち、上記第１．第２
の実施例と同様の方法でＳｉＯ２よりなる正孔注入阻止
層４およびａ −９ｉ ：Ｈよりなる光導電膜１を堆積
する。つづいて上記ａ−３ｉ：Ｈｌｌｌを堆積したスパ
ッタ装置内のＡｒおよびＨｚの混合ガスにさらにＮ２ガ
スを約０．１ ％混合して反応性スパッタリングを行い
、窒素をドープしたａ−３ｉ：Ｈ層６を約２０ｎｍの厚
さまで堆積する。つぎに上記スパッタ装置内をＩ Ｘ
１０−’Ｔａｒｔ以下に排気したのち、再び上記第１の
実施例と同様にＡｒおよびＨ２の混合ガスを導入し、さ
らにＢｚＨａを約５０ｐｐｍ導入して反応性スパッタリ
ングを行い、ボロンをドープしたａ−８ｉ：Ｈよりなる
層２を約２０ｎｍの厚さまで堆積する１以上のようにし
て作られた光導電ターゲットを電子銃と結合させ、管内
を真空排気したのち封止して本箱３の実施例の撮像管を
得た。FIG. 4 is a sectional view of an image pickup tube target according to a third embodiment of the present invention. After depositing a light-transmitting conductive film 3 mainly composed of tin oxide on a light-transmitting glass substrate 5, the above-mentioned first. Second
A hole injection blocking layer 4 made of SiO2 and a photoconductive film 1 made of a -9i :H are deposited in the same manner as in Example 2. Subsequently, reactive sputtering was performed by further mixing about 0.1% N2 gas into the Ar and Hz mixed gas in the sputtering equipment in which the a-3i:Hll was deposited, and the nitrogen-doped a-3i:H layer was formed. 6 is deposited to a thickness of about 20 nm. Next, the inside of the sputtering apparatus is
After evacuation to below 10-'Tart, a mixed gas of Ar and H2 was introduced again in the same manner as in the first embodiment, and approximately 50 ppm of BzHa was introduced to perform reactive sputtering to form a boron-doped a- 8i: A photoconductive target made as described above in which a layer 2 of H is deposited to a thickness of about 20 nm is coupled to an electron gun, and the tube is evacuated and then sealed to form an embodiment of the bookcase 3. An image pickup tube was obtained.
本実施例で用いたＮがドープされたａ−３ｉ：■（膜は
正孔を捕獲しやすいため、入射光によって励起されて走
行してきた正孔を捕獲する正孔蓄積層となる。また、Ｂ
をドープしたａ−８ｉ：Ｈ膜は電子を捕獲しやすいため
、電子蓄積層として働く。N-doped a-3i used in this example: (Since the film easily captures holes, it becomes a hole accumulation layer that captures holes that are excited by incident light and travel. B
The a-8i:H film doped with a-8i:H easily captures electrons, and thus functions as an electron storage layer.
以上第１〜第３の実施例で述べた撮像管を動作させたと
ころ、正孔蓄積層を設けずに５ｂｚＳａなどの電子蓄積
層のみを有する従来の撮像管に比べて２〜１５倍の感度
が得られ、且つ暗電流はターゲット電圧２０Ｖで２ｎＡ
以下、残像は３フイールド後で３％以下という良好な特
性を示し、すぐれた画質を得ることができた。When the image pickup tube described in the first to third embodiments was operated, the sensitivity was 2 to 15 times higher than that of a conventional image pickup tube that has only an electron storage layer such as 5bzSa without a hole storage layer. is obtained, and the dark current is 2nA at a target voltage of 20V.
Hereinafter, good characteristics were exhibited, with the afterimage being 3% or less after 3 fields, and excellent image quality could be obtained.
本発明によれば、入射光によって生じて走査面側に走行
してきた正孔が電子蓄積層に到達する前に蓄積されるた
め、走査時に電子を光導電膜に注入させるような電界が
強くなって入射光に応じた電子の注入が起こり、正孔と
再結合せずに光導電膜に入射した分だけ信号量が増加す
る。従って、撮像管自身に増幅作用を持たせることがで
き、高い感度の撮像管を得ることができる。According to the present invention, holes generated by incident light and traveling toward the scanning surface are accumulated before reaching the electron storage layer, so that the electric field that injects electrons into the photoconductive film becomes stronger during scanning. Electrons are injected in response to the incident light, and the signal amount increases by the amount of electrons that are incident on the photoconductive film without being recombined with holes. Therefore, the image pickup tube itself can have an amplification effect, and a highly sensitive image pickup tube can be obtained.
第１図は本発明による撮像管ターゲットの基本的構造を
示す断面図、第２図は本発明の第１の実施例による撮像
管ターゲットの断面図、第３図は本発明の第２の実施例
による撮像管ターゲットの断面図、第４図は本発明の第
３の実施例による撮像管ターゲットの断面図、第５図は
従来一般に用いられている撮像管ターゲットの断面図で
ある。
１・・・光導電膜、２・・・電子蓄積層、３・・・透光
性導電膜、４・・・正孔注入阻止層、５・・・透光性絶
縁基板。1 is a sectional view showing the basic structure of an image pickup tube target according to the present invention, FIG. 2 is a sectional view of an image pickup tube target according to a first embodiment of the present invention, and FIG. 3 is a sectional view showing a second embodiment of the present invention. FIG. 4 is a sectional view of an image pickup tube target according to a third embodiment of the present invention, and FIG. 5 is a sectional view of a commonly used image pickup tube target. DESCRIPTION OF SYMBOLS 1... Photoconductive film, 2... Electron storage layer, 3... Transparent conductive film, 4... Hole injection blocking layer, 5... Transparent insulating substrate.
Claims (1)
と光導電膜とを備え、上記透光性絶縁基板を光入射側に
配置した光導電ターゲットを有する撮像管において、上
記光導電膜の電子ビーム走査側に、正孔蓄積層と、上記
正孔蓄積層よりも電子ビーム走査面に近い側に配置され
た電子蓄積層とを設けたことを特徴とする撮像管ターゲ
ット。 ２、上記正孔蓄積層における電子の平均走行時間を平均
再結合時間よりも短くしたことを特徴とする特許請求の
範囲第１項記載の撮像管ターゲット。 ３、上記正孔蓄積層と電子蓄積層の間に、正孔に対する
ポテンシャル障壁を形成する層を設けたことを特徴とす
る特許請求の範囲第１項または第２項記載の撮像管ター
ゲット。 ４、上記正孔蓄積層は光導電膜と同じ母材に不純物がド
ープされた正孔捕獲層であることを特徴とする特許請求
の範囲第１項、第２項または第３項記載の撮像管ターゲ
ット。 ５、上記先導電膜の主たる成分が水素を含有した非晶質
シリコンであることを特徴とする特許請求の範囲第１項
、第２項、第３項または第４項のいずれかに記載した撮
像管ターゲット。[Claims] 1. Imaging having a photoconductive target comprising at least a light-transmitting conductive film and a photoconductive film on a predetermined light-transmitting insulating substrate, with the light-transmitting insulating substrate disposed on the light incident side. The tube is characterized in that a hole storage layer is provided on the electron beam scanning side of the photoconductive film, and an electron storage layer is provided on a side closer to the electron beam scanning surface than the hole storage layer. Image tube target. 2. The image pickup tube target according to claim 1, wherein the average transit time of electrons in the hole storage layer is shorter than the average recombination time. 3. The image pickup tube target according to claim 1 or 2, characterized in that a layer forming a potential barrier against holes is provided between the hole storage layer and the electron storage layer. 4. Imaging according to claim 1, 2 or 3, wherein the hole accumulation layer is a hole trapping layer in which the same base material as the photoconductive film is doped with impurities. tube target. 5. Claims 1, 2, 3, or 4, characterized in that the main component of the leading conductive film is amorphous silicon containing hydrogen. Image tube target.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61104643A JPS62262348A (en) | 1986-05-09 | 1986-05-09 | Image pickup tube target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61104643A JPS62262348A (en) | 1986-05-09 | 1986-05-09 | Image pickup tube target |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62262348A true JPS62262348A (en) | 1987-11-14 |
Family
ID=14386132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61104643A Pending JPS62262348A (en) | 1986-05-09 | 1986-05-09 | Image pickup tube target |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62262348A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS636729A (en) * | 1986-06-27 | 1988-01-12 | Hitachi Ltd | Target of image pick-up tube |
| US5466613A (en) * | 1992-06-19 | 1995-11-14 | Nippon Hoso Kyokai | Method of manufacturing a camera device |
-
1986
- 1986-05-09 JP JP61104643A patent/JPS62262348A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS636729A (en) * | 1986-06-27 | 1988-01-12 | Hitachi Ltd | Target of image pick-up tube |
| US5466613A (en) * | 1992-06-19 | 1995-11-14 | Nippon Hoso Kyokai | Method of manufacturing a camera device |
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