JPS62257010A - Detection of height - Google Patents

Detection of height

Info

Publication number
JPS62257010A
JPS62257010A JP61100726A JP10072686A JPS62257010A JP S62257010 A JPS62257010 A JP S62257010A JP 61100726 A JP61100726 A JP 61100726A JP 10072686 A JP10072686 A JP 10072686A JP S62257010 A JPS62257010 A JP S62257010A
Authority
JP
Japan
Prior art keywords
light
sample
reflected light
slit
specimen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61100726A
Other languages
Japanese (ja)
Inventor
Makoto Nakase
中瀬 真
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP61100726A priority Critical patent/JPS62257010A/en
Publication of JPS62257010A publication Critical patent/JPS62257010A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent the generation of a detection error caused by the interference of beams of light, by using low coherent light as irradiating light. CONSTITUTION:The surface of a specimen 11 is irradiated with the light from a light source 13 from an oblique direction. That is, the light from the light source 13 consisting of a white tungsten lamp passes through a filter 14 permitting the transmission of a long wavelength of 500nm or more and further passes through a slit 15 to be converged by a condenser 16 to irradiate the surface of the specimen 11. The reflected light 18 from the surface of the specimen 11 is converged by a lens 19 and passes through a slit 20 to be received by a light receiving element 21. The detection signal of the light receiving element 21 is supplied to a synchronous signal detection circuit 24 and the height position of the specimen 11 is detected on the basis of the detection output of said circuit 24. In this case, because light having a wide band width is used as the light irradiating the specimen 11 from an oblique direction, the interference of the reflected light from the surface of a Si-substrate and the reflected light from the surface of a resist can be prevented.

Description

【発明の詳細な説明】 [発明の目的] (産業上の利用分野) 本発明は、被測定試料上に斜め方向から光を入射し、そ
の反射光の強度分布変位量から試料表面の高さ位置を検
出する光学式高さ検出方法に間する。
[Detailed Description of the Invention] [Objective of the Invention] (Industrial Application Field) The present invention is directed to injecting light onto a sample to be measured from an oblique direction and determining the height of the sample surface from the amount of intensity distribution displacement of the reflected light. An optical height detection method is used to detect the position.

(従来の技術フ パターン転写装置や欠陥検出装置等においては、半導体
ウェハやマスク等の表面にレンズの焦点を合わせるため
、試料の高さ位置を正確に検出する必要がある。従来、
この種の高さ検出方法としては、第3図に示す如く試料
31の表面に斜め方向から光32を照射し、試料表面か
らの反射光33の強度分布に基いて高さ位置を検出する
方法が用いられている。この方法では、強度分布34に
従ったスリット像を試料31上に投影し、得られた反射
光によりスリット像35を得る。このスリット(gI3
5の強度分布を、通常は振動スリット等によって同期検
波して振動中心を求め、この中心点36の変位量から試
料31の表面の高さ位置を検出している。ここで、中心
点36は、強度分布35の左右の積分値が等しくなった
点に対応するものであり、この中心点検出により高精度
の位置検出が行われる。
(Conventional technology In pattern transfer devices, defect detection devices, etc., it is necessary to accurately detect the height position of the sample in order to focus the lens on the surface of a semiconductor wafer, mask, etc.)
As shown in FIG. 3, this type of height detection method involves irradiating the surface of a sample 31 with light 32 from an oblique direction and detecting the height position based on the intensity distribution of reflected light 33 from the sample surface. is used. In this method, a slit image according to the intensity distribution 34 is projected onto the sample 31, and a slit image 35 is obtained using the obtained reflected light. This slit (gI3
5 is usually synchronously detected using a vibrating slit or the like to determine the vibration center, and the height position of the surface of the sample 31 is detected from the amount of displacement of this center point 36. Here, the center point 36 corresponds to the point where the left and right integral values of the intensity distribution 35 are equal, and highly accurate position detection is performed by detecting this center point.

しかしながら、この種の方法にあっては次のような問題
があった。即ち、半導体ウェハの露光工程等においては
、第4図に示す如<Si基板41の表面にレジスト42
を塗布した試料を用いるため、レジスト42の表面はも
とより、基板41の表面からの反射光43が存在する。
However, this type of method has the following problems. That is, in the exposure process of semiconductor wafers, etc., a resist 42 is formed on the surface of the Si substrate 41 as shown in FIG.
Since a sample coated with is used, reflected light 43 is present not only from the surface of the resist 42 but also from the surface of the substrate 41.

そして、2つのスリット像強度分布を形成する。このと
き、両者の重なった部分44において光の干渉が生じ、
極めて特異な波形となる。第5図に理論計算による一例
を示す。3i基板上41に1.2[μ77L]のレジス
ト42を塗布した場合で、3i基板41からの反射光強
度分布Pと、レジスト42からの反射光強度分布Qが得
られ、両者の合成された強度分布Rには干渉により異常
ピークSが現われる。
Then, two slit image intensity distributions are formed. At this time, light interference occurs in the overlapping portion 44 of the two,
This results in an extremely unique waveform. Figure 5 shows an example based on theoretical calculations. When a resist 42 of 1.2 [μ77L] is coated on a 3i substrate 41, a reflected light intensity distribution P from the 3i substrate 41 and a reflected light intensity distribution Q from the resist 42 are obtained, and the two are synthesized. An abnormal peak S appears in the intensity distribution R due to interference.

この異常ピークは同期検波した時の左右の積分値にアン
バランスを生じ、第6図に示す如く、レジスト膜厚によ
っては高さ測定に異常な誤差が現われることが判明した
It has been found that this abnormal peak causes an imbalance in the left and right integral values when synchronously detected, and as shown in FIG. 6, an abnormal error appears in the height measurement depending on the resist film thickness.

(発明が解決しようとする問題点) このように従来方法では、被測定試料上に透明tlgl
等が存在する場合、光の干渉により検出光強度分布に異
常ピークが生じ、これにより高さ検出の誤差を招く等の
問題があった。
(Problems to be Solved by the Invention) In this way, in the conventional method, transparent tlgl is placed on the sample to be measured.
etc., an abnormal peak occurs in the detected light intensity distribution due to light interference, which causes problems such as height detection errors.

本発明は上記事情を考慮してなされたもので、その目的
とするところは、光の干渉に起因する検出誤差の発生を
防止することができ、検出精度の向上をはかり得る高さ
検出方法を提供することにある。
The present invention has been made in consideration of the above circumstances, and its purpose is to provide a height detection method that can prevent detection errors caused by light interference and improve detection accuracy. It is about providing.

[発明の構成コ (問題点を解決するための手段) 本発明の骨子は、光の干渉効果を低減するように、測定
光の可干渉性を低下させることにある。
[Configuration of the Invention (Means for Solving Problems) The gist of the present invention is to reduce the coherence of measurement light so as to reduce the interference effect of light.

低可干渉にする方法としては、光線の空間的・時間的コ
ヒーレンスを低下させればよい。このために、光線の波
長の幅を広くする或いは多波長光線にする、又は測定用
スリットの照明光を所謂インコヒーレント照明にする等
が考えられる。
A method for achieving low coherence is to reduce the spatial and temporal coherence of the light rays. To this end, it is conceivable to widen the wavelength range of the light beam, use it as a multi-wavelength light beam, or use so-called incoherent illumination as the illumination light of the measurement slit.

本発明はこのような点に着目し、?!!!測定試料の表
面に斜め方向から光を照射し、この光照射による該試料
表面からの反射光を受光し、この反射光強度分布の中心
点を求め、その変位mから上記被測定試料の高さ位置を
検出する高さ検出方法において、前記照射光として、低
可干渉性の光を用いるようにした方法である。
The present invention focuses on these points, and... ! ! ! The surface of the measurement sample is irradiated with light from an oblique direction, the reflected light from the sample surface due to this light irradiation is received, the center point of this reflected light intensity distribution is determined, and the height of the measurement sample is determined from the displacement m. This is a height detection method for detecting a position, in which low coherence light is used as the irradiation light.

(作用) 上記の方法であれば、基板及び基板上のレジスト等から
の各反射光の干渉が少なくなり、前記第5図に示したよ
うな異常ピークの発生は極めて小さいものとなる。この
ため、この異常ピークに起因する測定誤差の発生を防止
することが可能となる。
(Function) With the above method, the interference of each reflected light from the substrate and the resist on the substrate is reduced, and the occurrence of abnormal peaks as shown in FIG. 5 is extremely small. Therefore, it is possible to prevent measurement errors caused by this abnormal peak.

(実施例) 以下、本発明の詳細を図示の実施例によって説明する。(Example) Hereinafter, details of the present invention will be explained with reference to illustrated embodiments.

第1図は本発明の一実施例方法に使用した高さ検出装置
を示す概略構成図である。図中11は被測定試料であり
、この試料11は試料ステージ12上に載置されている
。試料11の表面には、光源13からの光17が斜め方
向から照射される。
FIG. 1 is a schematic configuration diagram showing a height detection device used in a method according to an embodiment of the present invention. In the figure, 11 is a sample to be measured, and this sample 11 is placed on a sample stage 12. The surface of the sample 11 is irradiated with light 17 from a light source 13 from an oblique direction.

即ち、白色タングステンランプ等からなる光源13から
の光は500 [nm3以上の長波長を透過するフィル
ター14を通り、さらにスリット15を通ったのち集束
レンズ16により集束され試料11の表面に照射される
。なお、フィルター14は、試料11の表面に塗布され
たレジスト等を感光する波長成分を除去するものであり
、照射光強度が十分弱い場合には必ずしも必要ない。
That is, light from a light source 13 consisting of a white tungsten lamp or the like passes through a filter 14 that transmits long wavelengths of 500 nm or more, and then passes through a slit 15, and is focused by a focusing lens 16 and irradiated onto the surface of the sample 11. . Note that the filter 14 removes the wavelength component that sensitizes the resist applied to the surface of the sample 11, and is not necessarily necessary when the intensity of the irradiated light is sufficiently weak.

試$111の表面からの反射光18はレンズ19により
集束され、スリット20を通ったのち受光素子21にて
受光される。ここで、スリット20は発振器22の発振
信号に応じて振動する振動子23により光の進行方向と
直交する方向にS動される。受光素子21で検出された
検出信号は、同期検波回路24に供給される。この同期
検波回路24は、発振器22の発振周期に同期して上記
検出信号を検波するものであり、該検出信号からノイズ
成分を除去している。そして、この同期検波回路24の
検出出力に基いて、試料11の高さ位置を測定するもの
となっている。
The reflected light 18 from the surface of the sample 111 is focused by a lens 19, passes through a slit 20, and is then received by a light receiving element 21. Here, the slit 20 is moved by an oscillator 23 that vibrates in response to an oscillation signal from an oscillator 22 in a direction perpendicular to the direction in which the light travels. The detection signal detected by the light receiving element 21 is supplied to a synchronous detection circuit 24. This synchronous detection circuit 24 detects the detection signal in synchronization with the oscillation cycle of the oscillator 22, and removes noise components from the detection signal. Based on the detection output of this synchronous detection circuit 24, the height position of the sample 11 is measured.

試料11として、前記第4図に示す如<Si基板41上
にレジスト42を塗布したものを用い、上記装置にて試
料11の高さ測定を行った。その結果、前述した異常ピ
ークが発生することはなく、測定異常値の現われない精
度良い測定を行うことができた。また、レジスト42の
厚さを変えても測定異常値が発生することはなかった。
As the sample 11, a resist 42 coated on a Si substrate 41 as shown in FIG. 4 was used, and the height of the sample 11 was measured using the above-mentioned apparatus. As a result, the above-mentioned abnormal peak did not occur, and highly accurate measurements without abnormal measurement values could be performed. Furthermore, even when the thickness of the resist 42 was changed, no abnormal measurement values occurred.

ここで、上記異常ピークの発生が防止されるのは、前記
照射光として白色光を用い、照射光のバンド幅を広くし
て光の干渉効果を少なくしているからである。また、本
発明者等の実験によれば、照射光の波長のバンド幅を3
0[nm3以上に広くすれば、上記異常ピークの発生が
略抑えられるのが確認された。
Here, the occurrence of the abnormal peak is prevented because white light is used as the irradiation light and the band width of the irradiation light is widened to reduce the light interference effect. Furthermore, according to experiments conducted by the present inventors, the wavelength bandwidth of the irradiation light was increased by 3
It was confirmed that the occurrence of the above-mentioned abnormal peaks can be substantially suppressed by increasing the width to 0 [nm3 or more.

かくして本*施例方法によれば、試料11に斜め方向か
ら照射する光としてバンド幅の広い光(白色光)を用い
ているので、3i基板表面及びレジスト表面からの各反
射光の干渉を防止することができ、反射光強度分布に異
常ピークが発生するのを未然に防止することができる。
Thus, according to this *example method, since wide-band light (white light) is used as the light that irradiates the sample 11 from an oblique direction, interference of each reflected light from the 3i substrate surface and the resist surface is prevented. This makes it possible to prevent abnormal peaks from occurring in the reflected light intensity distribution.

このため、光の干渉に起因する検出誤差の発生を防止す
ることができ、試料表面の高さ検出精度の向上をはかり
得る。また、光源13として、バンド幅の広いものを用
いるのみで、簡易に実現し得る等の利点がある。
Therefore, it is possible to prevent the occurrence of detection errors due to light interference, and it is possible to improve the accuracy in detecting the height of the sample surface. Further, there is an advantage that it can be easily realized simply by using a light source 13 with a wide band width.

なお、本発明は上述した実施例に限定されるものではな
い。例えば、前記照射光としては、バンド幅の広い光を
用いる代りに、2波長以上の多色光線を用いることが可
能である。さらに、照射光としてバンド幅の広いもの或
いは多波長光を用いる代りに、第2図に示す如く、スリ
ット照明光の平行性を悪くし、且つスリット面を見込む
角度θを十分大きくするようにしてもよい。また、同期
検波は必ずしも必要なく、要は反射光強度分布の積分し
た中心点を検出するものであればよい。その池、本発明
の要旨を逸脱しない範囲で、種々変形して実施すること
ができる。
Note that the present invention is not limited to the embodiments described above. For example, instead of using wide-bandwidth light as the irradiation light, it is possible to use polychromatic light having two or more wavelengths. Furthermore, instead of using a wide band width or multi-wavelength light as the irradiation light, as shown in Fig. 2, the parallelism of the slit illumination light is made poor and the angle θ at which the slit surface is viewed is made sufficiently large. Good too. Further, synchronous detection is not necessarily necessary, and any method that detects the integrated center point of the reflected light intensity distribution is sufficient. The present invention can be modified and implemented in various ways without departing from the spirit of the present invention.

[発明の効果] 以上詳述したように本発明によれば、照射光として低可
干渉性の光を用いることにより、試料表面からの反射光
の干渉を少なくすることができ、被測定試料が表面にレ
ジスト等の透明膜が被着されたものであっても、異常ピ
ークの発生を未然に防止することができる。従って、異
常ピークに起因する測定誤差の発生を防止することがで
き、試料表面の高さ検出を高精度に行うことができる。
[Effects of the Invention] As detailed above, according to the present invention, by using low coherence light as the irradiation light, interference of reflected light from the sample surface can be reduced, and the measured sample Even if a transparent film such as a resist is applied to the surface, abnormal peaks can be prevented from occurring. Therefore, measurement errors caused by abnormal peaks can be prevented, and the height of the sample surface can be detected with high precision.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例方法に使用した高さ検出装置
を示す概略構成図、第2図は変形例を説明するための模
式図、第3図は斜め入射型^ざ検出の原理を説明するた
めの模式図、第4図は測定誤差の原因となる光の干渉を
説明するための模式図、第5図は3i基板、レジストか
らの反射光の強度分布及びこれらを合成した反射光強度
分布を示す特性図、第6図はレジスト膜厚に対する表面
検出位置の変化を示す特性図である。 11・・・試料、12・・・試料ステージ、13・・・
光源、14・・・フィルター、15.20・・・スリッ
ト、16゜19・・・集光レンズ、17・・・照射光、
18・・・反射光、21・・・受光素子、22・・・発
振器、23・・・振動子、24・・・同期検波回路、4
1・・・Si基板、42・・・レジスト。 出願人代理人、弁理士 鈴江武彦 第1図 第3図
Fig. 1 is a schematic configuration diagram showing a height detection device used in an embodiment method of the present invention, Fig. 2 is a schematic diagram for explaining a modified example, and Fig. 3 is a principle of oblique incidence type ^za detection. Figure 4 is a schematic diagram to explain the interference of light that causes measurement errors. Figure 5 is the intensity distribution of reflected light from the 3i substrate and resist, and the combined reflection of these. FIG. 6 is a characteristic diagram showing the light intensity distribution, and FIG. 6 is a characteristic diagram showing the change in the surface detection position with respect to the resist film thickness. 11...sample, 12...sample stage, 13...
Light source, 14... Filter, 15.20... Slit, 16° 19... Condensing lens, 17... Irradiation light,
18... Reflected light, 21... Light receiving element, 22... Oscillator, 23... Vibrator, 24... Synchronous detection circuit, 4
1...Si substrate, 42...resist. Applicant's agent, patent attorney Takehiko Suzue Figure 1 Figure 3

Claims (5)

【特許請求の範囲】[Claims] (1)被測定試料の表面に斜め方向から光を照射し、こ
の光照射による該試料表面からの反射光を受光し、この
反射光強度分布の中心点を求め、該中心点の変位量から
上記被測定試料の高さ位置を検出する高さ検出方法にお
いて、前記照射光として、低可干渉性の光を用いたこと
を特徴とする高さ検出方法。
(1) Irradiate the surface of the sample to be measured with light from an oblique direction, receive the reflected light from the sample surface due to this light irradiation, find the center point of this reflected light intensity distribution, and calculate from the displacement of the center point. The height detection method for detecting the height position of the sample to be measured, characterized in that low coherence light is used as the irradiation light.
(2)前記照射光の波長のバンド幅を、少なくとも30
[nm]以上に設定したことを特徴とする特許請求の範
囲第1項記載の高さ検出方法。
(2) The wavelength bandwidth of the irradiation light is at least 30
The height detection method according to claim 1, wherein the height detection method is set to [nm] or more.
(3)前記照射光として、少なくとも2波長以上の多色
光線を用いたことを特徴とする特許請求の範囲第1項記
載の高さ検出方法。
(3) The height detection method according to claim 1, wherein polychromatic light having at least two wavelengths is used as the irradiation light.
(4)前記照射光として、スリットを通過した光を用い
、且つこのスリット照明光の平行性が悪く、スリット面
を見込む角度が十分大きいことを特徴とする特許請求の
範囲第1項記載の高さ検出方法。
(4) The high light beam according to claim 1, characterized in that the irradiation light is light that has passed through a slit, and the slit illumination light has poor parallelism, and the angle at which the slit surface is viewed is sufficiently large. Detection method.
(5)前記反射光強度の中心点を求める手段として、前
記反射光を振動させると共に、この振動に同期して反射
光の受光信号を周期検波することを特徴とする特許請求
の範囲第1項記載の高さ検出方法。
(5) As a means for determining the center point of the intensity of the reflected light, the reflected light is vibrated and the received signal of the reflected light is periodically detected in synchronization with this vibration. Height detection method described.
JP61100726A 1986-04-30 1986-04-30 Detection of height Pending JPS62257010A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61100726A JPS62257010A (en) 1986-04-30 1986-04-30 Detection of height

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61100726A JPS62257010A (en) 1986-04-30 1986-04-30 Detection of height

Publications (1)

Publication Number Publication Date
JPS62257010A true JPS62257010A (en) 1987-11-09

Family

ID=14281622

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61100726A Pending JPS62257010A (en) 1986-04-30 1986-04-30 Detection of height

Country Status (1)

Country Link
JP (1) JPS62257010A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6413123A (en) * 1987-07-06 1989-01-18 Fuji Photo Film Co Ltd Projecting device for auto focus
WO2002082008A1 (en) * 2001-04-09 2002-10-17 Korea Advanced Institute Of Science And Technology A method and apparatus of two wavelength interferometry for measuring accurate height of small step composed of two different materials

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6413123A (en) * 1987-07-06 1989-01-18 Fuji Photo Film Co Ltd Projecting device for auto focus
WO2002082008A1 (en) * 2001-04-09 2002-10-17 Korea Advanced Institute Of Science And Technology A method and apparatus of two wavelength interferometry for measuring accurate height of small step composed of two different materials

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