JPS62233914A - Piezoelectric thin film composite resonator and filter - Google Patents
Piezoelectric thin film composite resonator and filterInfo
- Publication number
- JPS62233914A JPS62233914A JP7730386A JP7730386A JPS62233914A JP S62233914 A JPS62233914 A JP S62233914A JP 7730386 A JP7730386 A JP 7730386A JP 7730386 A JP7730386 A JP 7730386A JP S62233914 A JPS62233914 A JP S62233914A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- piezoelectric thin
- piezoelectric
- filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 42
- 239000002131 composite material Substances 0.000 title claims abstract description 18
- 238000005530 etching Methods 0.000 claims abstract 3
- 239000000758 substrate Substances 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000010408 film Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical group [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は弾性振動を利用した圧電薄膜複合共振子及び
フィルタに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a piezoelectric thin film composite resonator and filter that utilize elastic vibration.
シリコンウェハーの異方性化学エツチングを用いること
により部分的に薄くしたダイヤフラムを形成した後Ｚｎ
Ｏなどの圧電体膜を形成したダイヤスラム構造の複合共
振子が、中村、清水（音響学会講演論文集２−６−１０
．１２７ページ（１９８０））、グルンドコフスキーら
（アプライド・フィジックス・レター、３７．９９３ペ
ージ（１９８０））、シーキンら（アプライド・フィジ
ックス・レター、３８．１２７ページ（１９８０））に
より発表されている。またシリコンウェハーをガリウム
ひ素に置き換えた複合共振子がシーキンら（アメリカ電
子通信学会・ｌ９８３ウルトラソニツク・シンポジウム
・プロシーディンゲス、４９５ページ）によって発表さ
れている。これらはい「れも異方性化学エツチング基板
が必要である。Zn after forming a partially thinned diaphragm by using anisotropic chemical etching of a silicon wafer.
A composite resonator with a diamond slam structure formed with a piezoelectric film such as
．． 127 pages (1980)), Grundkowski et al. (Applied Physics Letters, pages 37.993 (1980)), and Seekin et al. (Applied Physics Letters, pages 38.127 (1980)). Also, a composite resonator in which silicon wafers are replaced with gallium arsenide has been announced by Seekin et al. (American Institute of Electronics and Communication Engineers, 1983 Ultrasonics Symposium Proceedings, p. 495). All of these require an anisotropic chemically etched substrate.
一方、シリコンウェハーの上に、振動部分に空隙をもた
仕た５ｌＯｆ／金属電極／ＺｎＯ／金属電極／ Ｓ ＋
Ｏを構造の複合共振子が佐藤ら（第３９回アニュアル
・フリケンシー・コントロール・シンポジウム（＋９８
５））によって発表されている。しかし、以上の提案さ
れている振動子では、圧′ｆｒｉ薄膜を基板上まで広げ
て付着させ、かつ上部電極取り出し部が圧電薄膜の上に
あるため振動エネルギが基板１の支持台の部分にまで伝
わり、尖鋭度Ｑを低下させている。本発明は上記の欠点
を取り除いた圧電薄膜複合共振子及びフィルタに関する
。On the other hand, on a silicon wafer, a 5lOf/metal electrode/ZnO/metal electrode/S + with a gap in the vibrating part
A composite resonator with an O structure was presented at the 39th Annual Frequency Control Symposium (+98
5)). However, in the vibrator proposed above, the piezoelectric thin film is spread and attached onto the substrate, and the upper electrode extraction part is on the piezoelectric thin film, so the vibration energy is transmitted to the support part of the substrate 1. transmission, reducing the sharpness Q. The present invention relates to a piezoelectric thin film composite resonator and filter that eliminate the above-mentioned drawbacks.
本発明は第１図のように、基板１を支持台として振動部
は非常に薄い薄膜２、金属電極３、圧電薄膜４、上部金
属電極５から成る圧電薄膜複合共振子を考える。本発明
は特に、圧電薄膜の大きさを振動子を保持している基板
ｌの上部には無いようにして、振動エネルギを圧電薄膜
中に集中させ基板Ｉには伝わらないようにして、尖鋭度
Ｑを大ある。In the present invention, as shown in FIG. 1, a piezoelectric thin film composite resonator is considered, in which a substrate 1 is used as a support base, and the vibrating part is composed of a very thin thin film 2, a metal electrode 3, a piezoelectric thin film 4, and an upper metal electrode 5. In particular, the present invention is designed such that the size of the piezoelectric thin film is such that it is not located above the substrate I holding the vibrator, so that the vibration energy is concentrated in the piezoelectric thin film and is not transmitted to the substrate I. Q is large.
第２図は第１図の電極５の上、圧電薄膜４の上及び薄膜
３の上に薄膜１２を付着させた構造であり、振動エネル
ギは第１図の場合と同様に圧電膜の部分に集中すること
、また薄膜が対称構造となることからひずみの小さい圧
電薄膜複合共振子及びフィルタが得られる。FIG. 2 shows a structure in which a thin film 12 is attached on top of the electrode 5, piezoelectric thin film 4, and thin film 3 in FIG. Because of the concentration and the symmetrical structure of the thin film, piezoelectric thin film composite resonators and filters with low distortion can be obtained.
また、第１図或いは第２図の構造の振動子を基板ｌの上
に２個或いは２個以上作製したデバイス、或いは薄膜２
の上に２個或いは２個以上作製したデバイスも本発明に
含まれる。In addition, a device in which two or more vibrators having the structure shown in FIG. 1 or 2 are fabricated on a substrate l, or a thin film 2
The present invention also includes two or more devices fabricated on top of the above.
以上、本発明は振動部にのみ圧電膜をもった圧電薄膜複
合共振子及びフィルタである。従って、振動エネルギが
保持基板に伝わらない構造をもち、高い尖鋭度の圧電薄
膜複合共振子及びフィルタを小さい薄膜構造で得ること
ができる。As described above, the present invention is a piezoelectric thin film composite resonator and a filter having a piezoelectric film only in the vibrating part. Therefore, it is possible to obtain a piezoelectric thin film composite resonator and filter having a structure in which vibration energy is not transmitted to the holding substrate and having a high sharpness with a small thin film structure.
第１図（λ）は平面図であり、基板面及び圧電膜の面の
みを示す。
８、・・・この線より内部には基板ｌが存在しないか或
いはこの線の内部には基板１と振動子の間に空隙が存在
することを示す境界線、９．・・・この線より内部に圧
電膜が存在することを示す境界線、ＩＯｌ・・・基板の
無い部分或いは基板との間に空隙をもつ部分、１１．・
・・薄膜の上に付着した圧電膜。
第１図（ｂ）は本発明の断面図である。
ｌ ・・・振動子を支持する基板、２．・・・薄膜、３
゜・・・金属電極、４．・・・圧電膜、５゜・・・金属
電極、６゜・・・外部取り出し電極、７．・・・外部取
り出し電極。
第２図は第１図の表面に更に薄膜を付着させた構造をも
つ圧電薄膜複合振動子及びフィルタである。Ｉ２ ・・
・金属電極５の上の薄膜。FIG. 1 (λ) is a plan view, showing only the substrate surface and the piezoelectric film surface. 8. . . . A boundary line indicating that the substrate 1 does not exist inside this line or that a gap exists between the substrate 1 and the vibrator inside this line; 9. . . . Boundary line indicating that a piezoelectric film exists inside this line, IOl . . . A portion without a substrate or a portion with a gap between it and the substrate, 11.・
...Piezoelectric film attached on top of a thin film. FIG. 1(b) is a sectional view of the present invention. l...Substrate that supports the vibrator, 2. ...thin film, 3
゜...Metal electrode, 4. ...piezoelectric film, 5°...metal electrode, 6°...external lead-out electrode, 7. ... External electrode. FIG. 2 shows a piezoelectric thin film composite vibrator and filter having a structure in which a thin film is further attached to the surface of FIG. 1. I2...
- Thin film on metal electrode 5.
Claims (2)
常に薄い薄膜２、金属電極３、圧電薄膜４、上部金属電
極５から成り、かつ振動エネルギが基板１には伝わらな
いように振動部の下の基板１がエッチングなどにより取
り除かれた構造或いは基板１との間に空隙をもつ構造の
圧電薄膜複合共振子及びフィルタにおいて、圧電薄膜４
が基板１の支持台上には無く振動部のみに存在するよう
にした構造の圧電薄膜複合共振子及びフィルタ。(1) As shown in Figure 1, the vibrating part is made up of a very thin thin film 2, a metal electrode 3, a piezoelectric thin film 4, and an upper metal electrode 5, with the substrate 1 as a support, and the vibration energy is not transmitted to the substrate 1. In piezoelectric thin film composite resonators and filters in which the substrate 1 under the vibrating part is removed by etching or the like, or in which there is a gap between the piezoelectric thin film 4 and the substrate 1, the piezoelectric thin film 4
The piezoelectric thin film composite resonator and filter have a structure in which the resonator is not present on the support base of the substrate 1 but only in the vibrating part.
は非常に薄い薄膜２、金属電極３、圧電薄膜４、上部金
属電極５、上部金属電極５の上に更に非常に薄い薄膜１
２から成り、かつ振動エネルギが基板１には伝わらない
ように振動部の下の基板１がエッチングなどにより取り
除かれた構造、或いは基板１との間に空隙をもつ構造の
圧電薄膜複合共振子及びフィルタにおいて、圧電薄膜４
が基板１の支持台上には無く振動部のみに存在するよう
にした構造の圧電薄膜複合共振子及びフィルタ。(2) As shown in Fig. 2, using the substrate 1 as a support, the vibrating part is formed by a very thin thin film 2, a metal electrode 3, a piezoelectric thin film 4, an upper metal electrode 5, and a very thin layer on top of the upper metal electrode 5. thin film 1
A piezoelectric thin film composite resonator consisting of a piezoelectric thin film composite resonator having a structure in which the substrate 1 below the vibrating part is removed by etching or the like so that vibration energy is not transmitted to the substrate 1, or a structure having a gap between the substrate 1 and the substrate 1. In the filter, the piezoelectric thin film 4
The piezoelectric thin film composite resonator and filter have a structure in which the resonator is not present on the support base of the substrate 1 but only in the vibrating part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7730386A JPS62233914A (en) | 1986-04-03 | 1986-04-03 | Piezoelectric thin film composite resonator and filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7730386A JPS62233914A (en) | 1986-04-03 | 1986-04-03 | Piezoelectric thin film composite resonator and filter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62233914A true JPS62233914A (en) | 1987-10-14 |
Family
ID=13630140
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7730386A Pending JPS62233914A (en) | 1986-04-03 | 1986-04-03 | Piezoelectric thin film composite resonator and filter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62233914A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7728485B2 (en) * | 2008-05-30 | 2010-06-01 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Bulk acoustic wave device and a method of its manufacturing |
-
1986
- 1986-04-03 JP JP7730386A patent/JPS62233914A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7728485B2 (en) * | 2008-05-30 | 2010-06-01 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Bulk acoustic wave device and a method of its manufacturing |
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