JPS62230970A - Device for sputtering magnetron - Google Patents
Device for sputtering magnetronInfo
- Publication number
- JPS62230970A JPS62230970A JP7484986A JP7484986A JPS62230970A JP S62230970 A JPS62230970 A JP S62230970A JP 7484986 A JP7484986 A JP 7484986A JP 7484986 A JP7484986 A JP 7484986A JP S62230970 A JPS62230970 A JP S62230970A
- Authority
- JP
- Japan
- Prior art keywords
- target plate
- magnet
- target
- plate
- permanent magnet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 abstract description 10
- 230000008020 evaporation Effects 0.000 abstract description 7
- 238000001704 evaporation Methods 0.000 abstract description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 229910052786 argon Inorganic materials 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- -1 argon ions Chemical class 0.000 description 8
- 239000007789 gas Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 235000012054 meals Nutrition 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】 （イ）産業上の利用分野 本発明はマグネトロンスパッタ装置に関する。[Detailed description of the invention] (b) Industrial application field The present invention relates to a magnetron sputtering apparatus.
（ロ）従来の技術
従来から成膜技術の一つとして、マグネトロンスパッタ
装置が広く用いられている。このｙ＆置は、第２図の如
く、アルゴンガスの存する真空チャンバの中で、膜が付
されるべき基板２に対向してターゲット板３が設けられ
、このターゲット板の背面ｌｌ１ｌＩ（反基板ｎｔｑ
＞に永久磁石５が配されたものであ′ る。そして、基
板２とターゲット板３との間に電圧がかけられている。(B) Conventional Technology Magnetron sputtering equipment has been widely used as a film forming technology. As shown in FIG. 2, in a vacuum chamber containing argon gas, a target plate 3 is provided facing the substrate 2 to which a film is to be applied, and the rear surface of this target plate is ll1lI (anti-substrate ntq
A permanent magnet 5 is arranged at . A voltage is applied between the substrate 2 and the target plate 3.
また、永久磁′ｒｉ５は、ｉ３図の如く、円柱磁石５ａ
の回りに間隔を存して同心に円環磁石５ｂが配置された
ものである。In addition, the permanent magnet 'ri5 is a cylindrical magnet 5a as shown in Figure i3.
A ring magnet 5b is arranged concentrically around the magnet 5b with a space therebetween.
そして、円柱磁石５ａのターデツ）Ｉｌｌｑ端面をＮ極
、円環磁石５ ｂのそれをＳ極とすれば、第２図示の如
く、磁力線は中心Ｎ極から周囲ｓｌ＋二至る。If the end face of the cylindrical magnet 5a is set as the north pole and that of the annular magnet 5b as the south pole, the lines of magnetic force extend from the center north pole to the circumference sl+2, as shown in the second diagram.
従って、磁力線の折り返し点において、アルゴンイオン
は、矢示Ｂの如く、円環磁石の半径方向外側へ向く磁場
と同時に、矢示Ｅの如くターゲット板と垂直に向かう電
場に曝されることになる。そのため、７レミングの左手
の法則に上り、アルゴンイオンには磁場とＴＬ場との両
方向に垂直な方向に力が加わる。そして、結局のところ
、ドーナツ状の空間内にアルゴンイオンが集まることに
なる。Therefore, at the turning point of the magnetic field lines, the argon ions are exposed to a magnetic field directed outward in the radial direction of the ring magnet, as shown by arrow B, and an electric field directed perpendicularly to the target plate, as shown by arrow E. . Therefore, according to Lemming's left-hand rule, a force is applied to the argon ion in a direction perpendicular to both the magnetic field and the TL field. As a result, argon ions will gather in the donut-shaped space.
このようにして集まったアルゴンイオンがターゲット板
３に衝突して原子をはじき出すので、ターデツ）［３の
表面は円環状に？２食され、いわゆる線状蒸発源が生成
される。The argon ions gathered in this way collide with the target plate 3 and expel atoms, so that the surface of the target plate 3 becomes annular? Two meals are consumed, and a so-called linear evaporation source is generated.
また、マグネトロンスパッタ装置で１よ、限られた頭載
にアルゴンイオンが集められるので、全体としてのアル
ゴンイオンの個数が少なかつても、つまり、アルゴンガ
スの圧力が低かつても、スパッタ作用が充分に行なわれ
る。それ故に従来の装置て゛は、アルゴンゲスの圧力が
（出＜保たれていた。゛（ハ）発明が解決しようとする
問題、α）肖記の如く、従来の装置では線状の蒸発源と
低圧力の２つの理由によ−って、基板表面・＼の“つき
まわり（ステップカバレーノ）″が悪い。ここで、ｈｒ
−仮炙面にある凹凸の山の頂上と谷底のターゲット板・
８表面に平行な面１こ生成されｒこ膜の厚さを１、クー
プツト板の表面に垂直な而（凹凸の側面）に生成された
膜の厚さをビとすれば、ピ／ｌの値が“つきまわり”と
呼ぼｊしる。In addition, in a magnetron sputtering device, argon ions are collected in a limited amount of head space, so even when the overall number of argon ions is small, that is, even when the pressure of argon gas is low, the sputtering effect is sufficient. It is done. Therefore, in the conventional device, the pressure of argon gas was maintained at (c) the problem to be solved by the invention. For these two reasons, the "step coverage" of the substrate surface is poor. Here, hr
-Target board at the top of the uneven mountain and the bottom of the valley on the temporary grilling surface.
If the thickness of the film generated on one surface parallel to the 8 surface is 1, and the thickness of the film generated perpendicular to the surface of the Kuputt plate (on the uneven side surface) is Bi, then P/L is The value is called "turn around".
そして、線状蒸発源では、原子が飛び出してくるのはタ
ーデラミ板の全面がζ）ではな（、限られた領域のみか
らであるので、凹凸の側面に到達する）！；（丁は少な
くなっている。まｒこ、圧力が低い場訃はアルゴンイオ
ンの数が少ないので、ターゲット板から飛び出した原子
はアルゴンイオンに衝突せずに基板表面に到達するが、
或は、衝突してもその回数が少ない。従って、ターゲッ
ト板から飛び出した原子の進行方向が変わる回数が少な
く、結局、凹凸の側面に至る原子が少な（なる。これら
の理由がら“つきよりり１が悪くなる。In the case of a linear evaporation source, the atoms do not fly out from the entire surface of the tarderami plate (ζ), but only from a limited area, so they reach the uneven sides! (There are fewer atoms.) When the pressure is low, there are fewer argon ions, so the atoms that fly out of the target plate reach the substrate surface without colliding with the argon ions.
Or even if there are collisions, the number of collisions is small. Therefore, the number of times that the traveling direction of the atoms flying out from the target plate changes is small, and in the end, fewer atoms reach the uneven side surface.For these reasons, the ``hitting'' is worse.
従って、本発明の目的は、“つきまわり”の良好なマグ
ネトロンスパッタ装置を提供することを目的とする。Therefore, an object of the present invention is to provide a magnetron sputtering device with good "throwing".
（ニ）問題点を解決するための手段
前記目的を達成するため、本発明の（１η或は次の如（
である。即ち、ターゲット板の裏側に内、蔵されている
永久磁石を、前記ターゲット板の面に平行な面内で移動
させる駆動はｔｌｔが設けられたことである。(d) Means for solving the problems In order to achieve the above object, (1η or the following method) of the present invention is provided.
It is. That is, tlt is provided to drive the permanent magnet housed on the back side of the target plate in a plane parallel to the plane of the target plate.
（ホ）作 用
永久磁石がｆｆｉ！ｌ１ＪＪ＋茂枯によって、ターゲッ
ト板の面に平行な面内で移動せられ、これによってｙ−
ゲット板の表面には面状蒸発源が生成され、“つきまわ
り”が良くなる。(e) The working permanent magnet is ffi! l1JJ+Mogae moves in a plane parallel to the plane of the target plate, which causes y-
A planar evaporation source is generated on the surface of the target plate, improving the "throwing power".
（へ）実施例 次に本発明の一実施例を図面にもとづき説明する。(f) Example Next, one embodiment of the present invention will be described based on the drawings.
真空チャンバＣ内で、基板ホルダ１が鉛直面に展延して
立設され、その表面には被膜を付されるべき基板２が取
付けられている。基板２に対し間隔を存して対向するタ
ーデットハヮノング４の一！ＩＩＩ ｌｌ１ｉにはター
デラミ板３が基板２に対し間隔を存して対向して取ｆ・
１けられている。また、ターグツ１ハウノング・ｔの内
部で前記ターゲット板３の裏面側には永久磁石５が設け
られている。In the vacuum chamber C, a substrate holder 1 is installed extending vertically, and a substrate 2 to be coated with a film is attached to the surface of the substrate holder 1 . One of the tardet hawnongs 4 facing the substrate 2 with a gap between them! III In the ll1i, the tarderami plate 3 is mounted facing the board 2 with a gap therebetween.
I'm getting 1 digit. Further, a permanent magnet 5 is provided on the back side of the target plate 3 inside the target plate 1.
また、磁石５の文面には、磁石の中心輪線がＣ）偏芯し
た位置に、回転柚６が取付けられ、この軸の部端はハフ
ノング・［の璧を貫通してハウゾング４の外側・＼突出
している。そしてこの突出端には伝動歯１１１９を介し
てモータ７が接続されている。In addition, in the text of the magnet 5, a rotary cylindrical member 6 is attached at a position where the center ring line of the magnet is eccentric, and the end of this shaft passes through the wall of the outer ring 4. \It stands out. The motor 7 is connected to this protruding end via transmission teeth 1119.
従って、そ−タ７を回転させれば、伝動歯１７１９をπ
して回転軸６が回転し、磁石５は偏心回転し、クープツ
ト板３の表面には面状蒸発源が生成される、
なお、ターゲット板３が円形でない場合には、回転軸９
と磁石５とをカムまたはゼネバ等の運動変換磯構を介し
て連結することにより、磁石５を揺動または平行往復運
動をさせてもよい。Therefore, if the rotor 7 is rotated, the transmission tooth 1719 is rotated by π
The rotating shaft 6 rotates, the magnet 5 rotates eccentrically, and a planar evaporation source is generated on the surface of the Kupts plate 3. Note that if the target plate 3 is not circular, the rotating shaft 9
The magnet 5 may be caused to swing or reciprocate in parallel by connecting the magnet 5 and the magnet 5 via a motion converting structure such as a cam or Geneva.
（ト）発明の効果
本発明は以上の如く、永久磁石がターゲット板の面と平
行な面内で移動ｒるので、ターゲット板の表面には面状
蒸発源が生成され、これによって基板・＼の“つきまわ
り”が向上することとなった。(G) Effects of the Invention As described above, in the present invention, since the permanent magnet moves in a plane parallel to the surface of the target plate, a planar evaporation source is generated on the surface of the target plate, which causes the substrate This resulted in an improvement in the "throwing power" of the engine.
ｍ１１２１は本発明の一実施例を示す水平断面図、ｆｊ
Ｓ２図は従来技術の水平断面図、第３図は永久磁石の斜
ン見図である。
２・・・基板、３・・・ターゲット板、５・・・永久磁
石、６・・・回転軸、７・・・モータ、８・・・真空チ
ャンバ代理人 弁理士 西教 圭一部
代理人 弁理士 大館 新 平
代理人 弁理士 百聞 壬生弥
第１図
第２図
第３図m1121 is a horizontal sectional view showing one embodiment of the present invention, fj
Figure S2 is a horizontal sectional view of the prior art, and Figure 3 is a perspective view of the permanent magnet. 2...Substrate, 3...Target plate, 5...Permanent magnet, 6...Rotating shaft, 7...Motor, 8...Vacuum chamber agent Patent attorney Kei Saikyo Participant Patent attorney Attorney Shin Taira Odate Agent Patent Attorney Hyakumon Mibuya Figure 1 Figure 2 Figure 3
Claims (1)
ターゲット板の面に平行な面内で移動させる駆動機構が
設けられたことを特徴とするマグネトロンスパッタ装置
。A magnetron sputtering apparatus comprising a drive mechanism that moves a permanent magnet built into the back side of a target plate in a plane parallel to the surface of the target plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7484986A JPS62230970A (en) | 1986-03-31 | 1986-03-31 | Device for sputtering magnetron |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7484986A JPS62230970A (en) | 1986-03-31 | 1986-03-31 | Device for sputtering magnetron |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62230970A true JPS62230970A (en) | 1987-10-09 |
Family
ID=13559173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7484986A Pending JPS62230970A (en) | 1986-03-31 | 1986-03-31 | Device for sputtering magnetron |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62230970A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63282263A (en) * | 1987-05-13 | 1988-11-18 | Fuji Electric Co Ltd | Magnetron sputtering device |
| US6050398A (en) * | 1998-11-25 | 2000-04-18 | Novartis, Ag | Contact lens storage container |
-
1986
- 1986-03-31 JP JP7484986A patent/JPS62230970A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63282263A (en) * | 1987-05-13 | 1988-11-18 | Fuji Electric Co Ltd | Magnetron sputtering device |
| US6050398A (en) * | 1998-11-25 | 2000-04-18 | Novartis, Ag | Contact lens storage container |
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