JPS62219442A - Linear electron beam generator - Google Patents
Linear electron beam generatorInfo
- Publication number
- JPS62219442A JPS62219442A JP6332486A JP6332486A JPS62219442A JP S62219442 A JPS62219442 A JP S62219442A JP 6332486 A JP6332486 A JP 6332486A JP 6332486 A JP6332486 A JP 6332486A JP S62219442 A JPS62219442 A JP S62219442A
- Authority
- JP
- Japan
- Prior art keywords
- cathodes
- electron beam
- electron
- intensity distribution
- linear electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 24
- 230000003287 optical effect Effects 0.000 claims abstract description 6
- 230000001133 acceleration Effects 0.000 claims abstract description 3
- 230000004075 alteration Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は線状電子ビーム発生装置に関し、特にS OI
IBI等の半導体膜のアニールまたは機械部品の溶接
、加工等に用いる線状電子ビーム発生装置に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a linear electron beam generator, and in particular to an S OI
The present invention relates to a linear electron beam generator used for annealing semiconductor films such as IBI or welding and processing mechanical parts.
電子ビームを用いて半導体膜のアニールまたは機械部品
の溶接、加工等を行う際、線状の電子ビームを用いる方
が短時間の処理で済ませることができ、点状電子ビーム
に比べ有利である。従来、この種の線状電子ビームを得
る技術としては、線状のカソードを用いる方法または点
状カソードを用いて点状ビームを一方向に高速走査する
ことにより線状の加熱領域を得る方法が用いられている
。When an electron beam is used to anneal a semiconductor film or to weld or process mechanical parts, the use of a linear electron beam is more advantageous than a point-shaped electron beam because the process can be completed in a shorter time. Conventional techniques for obtaining this type of linear electron beam include a method using a linear cathode or a method using a point cathode to scan a point beam in one direction at high speed to obtain a linear heating area. It is used.
(西村正、赤坂洋−1応用物理、Voe、54 (19
85>、1274頁)
〔発明が解決しようとする問題点〕
上述した従来の線状電子ビームを得る技術では、線状の
カソードを用いた場合には、ビームの長さが3〜5龍程
度までは比較的均一なビーム強度分布を得ることが可能
であるが、それ以上の長さを有する均一なビームを得る
ことは難かしいという欠点がある。また点状カソードを
用いて点状ビ−ムを高速走査する方法の場合には、大き
なビーム電流を得ることが困難であり、大面積処理には
適さないという欠点がある。(Madashi Nishimura, Hiroshi Akasaka-1 Applied Physics, Voe, 54 (19
85>, p. 1274) [Problems to be Solved by the Invention] In the above-mentioned conventional technology for obtaining a linear electron beam, when a linear cathode is used, the beam length is about 3 to 5 yen. Although it is possible to obtain a relatively uniform beam intensity distribution up to that length, it is difficult to obtain a uniform beam having a longer length. Furthermore, the method of scanning a dot beam at high speed using a dot cathode has the disadvantage that it is difficult to obtain a large beam current and is not suitable for large area processing.
本発明の目的は、このような従来の問題点を解決し、数
mo+の長さを有する線状電子ビームを安定に得る線状
電子ビーム発生装置を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to solve these conventional problems and provide a linear electron beam generator that can stably generate a linear electron beam having a length of several mo+.
r問題点を解決するための手段〕
本発明の線状電子ビーム発生装置は、複数個のカソード
と該複数個のカソードを包囲するような開口部を有する
ウェネルトからなる電子銃と、該電子銃からの電子ビー
ムをそれぞれ加速しまた収差なく収束し且つ試料面上を
走査させる加速電極と、電子光学レンズ手段と、ビーム
偏向手段と、前記複数個のカソードに供給するバイアス
電圧がそれぞれ独立に可変できるバイアス電源とを備え
ている。Means for Solving Problems] The linear electron beam generating device of the present invention includes a Wehnelt electron gun having a plurality of cathodes and an opening that surrounds the plurality of cathodes, and the electron gun. The bias voltage supplied to the acceleration electrode, the electron optical lens means, the beam deflection means, and the plurality of cathodes, each of which accelerates and converges the electron beam without aberration and scans the sample surface, is independently variable. Equipped with a bias power supply that can be used.
複数個のカソードから取出した電子を加速し、収差を減
少するため比較的大口径の電子光学系を用いて収束する
ことにより、カソードの像を試料面上に投影できること
が実験により確認された。Experiments have confirmed that it is possible to project cathode images onto the sample surface by accelerating electrons extracted from multiple cathodes and focusing them using a relatively large-diameter electron optical system to reduce aberrations.
したがって、均一なビーム強度分布が得られる長さのカ
ソードを複数個用いることにより、より長い線状電子ビ
ームを得ることが可能である。また、複数個のカソード
に対するバイアス電圧がそれぞれ独立に可変できるよう
にすることにより、各カソードより得られるビーム強度
をそれぞれ変化することができ、線状ビームの全長に亘
って均一な強度分布を得ることができる。Therefore, by using a plurality of cathodes with a length that provides a uniform beam intensity distribution, it is possible to obtain a longer linear electron beam. In addition, by making it possible to vary the bias voltages for multiple cathodes independently, the beam intensity obtained from each cathode can be varied, and a uniform intensity distribution can be obtained over the entire length of the linear beam. be able to.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図は本発明の一実施例の構成図、第2図は本実施例
に用いる電子銃の拡大断面図、第3図は本実施例により
得られるビーム強度分布を示すグラフである。FIG. 1 is a block diagram of an embodiment of the present invention, FIG. 2 is an enlarged sectional view of an electron gun used in this embodiment, and FIG. 3 is a graph showing a beam intensity distribution obtained by this embodiment.
本実施例は電子銃1、電子銃1を構成するカソード2お
よびウェネルト3、加速電極4、レンズコイル5、偏向
コイル6、試料7、試料台8、加速電極9、主バイアス
電源10及び微調用バイアス電源11を有してなる。This embodiment includes an electron gun 1, a cathode 2 and Wehnelt 3 that constitute the electron gun 1, an accelerating electrode 4, a lens coil 5, a deflection coil 6, a sample 7, a sample stage 8, an accelerating electrode 9, a main bias power supply 10, and a fine adjustment It has a bias power supply 11.
電子銃1は3個のカソード2及びウェネルト3を有する
。カソード2は、タングステンフィラメントの直熱形と
し、3個用いている。フィラメントの長さは中央のカソ
ード2aが3 am ’、両端のカソード2b、2Cが
2III11とし、それらの間の間隔はIIImとして
いる。ウェネルト3は各カソード2a、2b、2cを包
囲するような形状となっている。加速電極4には加速電
源9から15キロボルトの定電圧が印加され、電子ビー
ムを加速する。The electron gun 1 has three cathodes 2 and Wehnelts 3. The cathodes 2 are directly heated tungsten filaments, and three cathodes are used. The length of the filament is 3 am' for the central cathode 2a, 2III11 for the cathodes 2b and 2C at both ends, and the spacing between them is IIIm. Wehnelt 3 is shaped to surround each cathode 2a, 2b, 2c. A constant voltage of 15 kilovolts is applied to the accelerating electrode 4 from an accelerating power source 9 to accelerate the electron beam.
レンズコイル5は電子ビームの集束を行い、また偏向コ
イル6は試料台8上の試料7に対して電子ビームの走査
を行う。主バイアス電源10はO〜1000ボルトまで
連続可変可能な安定化電源とし、この主バイアス電源1
0の電圧を変化することにより試料に到達するビーム電
流を所望の電流値に設定する。微調用バイアス電源11
は均一なビーム強度分布を得るために用いる電源であり
、O〜50ボルトまで連続可変可能な安定化電源である
。The lens coil 5 focuses the electron beam, and the deflection coil 6 scans the sample 7 on the sample stage 8 with the electron beam. The main bias power supply 10 is a stabilized power supply that can be continuously varied from O to 1000 volts.
By changing the zero voltage, the beam current reaching the sample is set to a desired current value. Bias power supply 11 for fine adjustment
is a power source used to obtain a uniform beam intensity distribution, and is a stabilized power source that can be continuously varied from 0 to 50 volts.
−h述のような構成および動作の本実施例により、約6
〜7mmの長さを有する線状電子ビームを10〜100
ミリアンペアのビーム電流範囲で安定して得ることがで
きる。またそのビーム強度分布をファラデーケージで測
定した結果、10〜100ミリアンペアの電流範囲に亘
り、6amのビーム長内での強度変化は±5%以内とす
ることができる。- According to this embodiment of the configuration and operation as described in h.
10 to 100 linear electron beams with a length of ~7 mm
Stable beam current can be obtained in the milliampere beam current range. Furthermore, as a result of measuring the beam intensity distribution using a Faraday cage, the intensity change within a beam length of 6 am can be within ±5% over a current range of 10 to 100 milliamperes.
これは第3図に示すように、各カソードより得られるビ
ーム強度分布12が図の様になっており、その結果、均
一な合成されたビーム強度分布13が得られるためであ
る。This is because, as shown in FIG. 3, the beam intensity distribution 12 obtained from each cathode is as shown in the figure, and as a result, a uniform combined beam intensity distribution 13 is obtained.
以上説明したように本発明は、複数個のカソードとウェ
ネルト及び加速電極及び電子光学レンズ系及びビーム偏
向系を有し、且つ複数個のカソードに対するバイアス電
圧がそれぞれ独立に可変できる微調用バイアス電源を設
けることにより、6〜7 inの長さに亘り均一な強度
分布を有する線状電子ビームを10〜100ミリアンペ
アのビーム電流範囲で安定して得ることができ、したが
って短時間のアニールで均一な膜質を有する半導体膜を
得ることができ、また短時間で機械部品の溶接や加工を
行なうことができる効果がある。As explained above, the present invention provides a bias power supply for fine adjustment which has a plurality of cathodes, a Wehnelt electrode, an accelerating electrode, an electron optical lens system, and a beam deflection system, and in which the bias voltages for the plurality of cathodes can be varied independently. By providing this, it is possible to stably obtain a linear electron beam with a uniform intensity distribution over a length of 6 to 7 inches in a beam current range of 10 to 100 milliamperes, and therefore, a uniform film quality can be achieved with a short annealing time. It is possible to obtain a semiconductor film having the following characteristics, and there is also an effect that mechanical parts can be welded and processed in a short time.
第1図は本発明の一実施例の構成図、第2図は本実施例
に用いる電子銃の拡大断面図、第3図は本実施例によ・
り得られるビーム強度分布を示すグラフである。
1・・・電子銃、2・・・カソード、3・・・ウェネル
ト、4・・・加速電極、5・・・レンズコイル、6・・
・清白コイル、7・・・試料、8・・・試料台、9・・
・加速電極、10・・・主バイアス電源、11・・・微
調用バイアス電源、12・・・各カソードより得られる
ビーム強度分布、13・・・合成されたビーム強度分布
。
ギ;1:) イ 13FIG. 1 is a block diagram of an embodiment of the present invention, FIG. 2 is an enlarged sectional view of an electron gun used in this embodiment, and FIG. 3 is a diagram of an electron gun according to this embodiment.
2 is a graph showing a beam intensity distribution obtained by DESCRIPTION OF SYMBOLS 1... Electron gun, 2... Cathode, 3... Wehnelt, 4... Accelerating electrode, 5... Lens coil, 6...
・Clean white coil, 7...sample, 8...sample stand, 9...
- Accelerating electrode, 10... Main bias power supply, 11... Bias power supply for fine adjustment, 12... Beam intensity distribution obtained from each cathode, 13... Combined beam intensity distribution. G;1:) I 13
Claims (1)
な開口部を有するウェネルトからなる電子銃と、該電子
銃からの電子ビームをそれぞれ加速しまた収差なく収束
し且つ試料面上を走査させる加速電極と、電子光学レン
ズ手段と、ビーム偏向手段と、前記複数個のカソードに
供給するバイアス電圧がそれぞれ独立に可変できるバイ
アス電源とを備えることを特徴とする線状電子ビーム発
生装置。An electron gun consisting of a Wehnelt electron gun having a plurality of cathodes and an opening that surrounds the plurality of cathodes, and an acceleration for accelerating the electron beams from the electron gun, converging them without aberration, and scanning them over a sample surface. A linear electron beam generating device comprising an electrode, an electron optical lens means, a beam deflection means, and a bias power source whose bias voltage supplied to the plurality of cathodes can be varied independently.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6332486A JPS62219442A (en) | 1986-03-19 | 1986-03-19 | Linear electron beam generator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6332486A JPS62219442A (en) | 1986-03-19 | 1986-03-19 | Linear electron beam generator |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62219442A true JPS62219442A (en) | 1987-09-26 |
Family
ID=13225966
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6332486A Pending JPS62219442A (en) | 1986-03-19 | 1986-03-19 | Linear electron beam generator |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62219442A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0422053A (en) * | 1990-05-16 | 1992-01-27 | Hitachi Ltd | Linear filament type electron gun |
-
1986
- 1986-03-19 JP JP6332486A patent/JPS62219442A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0422053A (en) * | 1990-05-16 | 1992-01-27 | Hitachi Ltd | Linear filament type electron gun |
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