JPS62217542A - Cathode-ray tube - Google Patents

Cathode-ray tube

Info

Publication number
JPS62217542A
JPS62217542A JP5950886A JP5950886A JPS62217542A JP S62217542 A JPS62217542 A JP S62217542A JP 5950886 A JP5950886 A JP 5950886A JP 5950886 A JP5950886 A JP 5950886A JP S62217542 A JPS62217542 A JP S62217542A
Authority
JP
Japan
Prior art keywords
grid
electron beam
ray tube
electrode
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5950886A
Other languages
Japanese (ja)
Inventor
Akira Kawada
晃 河田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP5950886A priority Critical patent/JPS62217542A/en
Publication of JPS62217542A publication Critical patent/JPS62217542A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve focus characteristics by forming resisting layers in the vicinity of holes of some electrodes among plural electrodes, through which holes electron beams pass. CONSTITUTION:As the material of resisting layers 6, e.g. crystalline lead borate glass is used. Layers of said glass are annularly formed adjacent to holes 7 of the surface of the sixth grid G6 of the fifth grid G5. When a predetermined voltage is applied to the fifth grid G5 having the so-formed resisting layers 6, a predetermined amount of negative electric charge is charged in the vicinity of the resisting layers 6 so that this negative electric charge and the negative electric charge of electron beams are reacted to each other. Thus, it is possible to restrain constituents of electron beams dispersed in a radial direction to substantially reduce the diameter of beam spot, and thereby improve focus characteristics.

Description

【発明の詳細な説明】 〔発明の目的〕 (産業上の利用分野) 本発明は陰極線管に関する。[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a cathode ray tube.

(従来の技術) 一般に陰極線管、例えばシャドウマスク型カラー受像管
は楳第6図に示すように硝子で形成された実質的に矩形
状のパネル01)と漏斗状のファンネル0のとネック0
3)から構成される。そしてパネルQl)の内面には赤
、緑及び青に夫々発光する例えばストライプ状蛍光体ス
クリーン(ロ)が設けられ、一方ネツクO■にはパネル
ω)の水平軸線に沿って一列に配列され赤、緑及び青に
対応する3本の電子ビームθΦを射出するいわゆるイン
ライン型電子銃Oeが内設されている。また色選別機能
を備え主面に実質的に矩形状の電子ビーム通過孔を有す
るシャドウマスクθ0がパネル01)に近接対向して舵
口されている。
(Prior Art) In general, a cathode ray tube, for example a shadow mask type color picture tube, has a substantially rectangular panel 01 made of glass, a funnel-shaped funnel 0, and a neck 0, as shown in FIG.
3). The inner surface of the panel Ql) is provided with, for example, a striped phosphor screen (b) that emits red, green, and blue, respectively, while the net O■ is provided with a striped phosphor screen (b) that emits red, green, and blue light, while the screen (b) is arranged in a line along the horizontal axis of the panel ω). A so-called in-line electron gun Oe that emits three electron beams θΦ corresponding to , green, and blue is installed inside. Further, a shadow mask θ0 having a color selection function and having a substantially rectangular electron beam passage hole on its main surface is arranged close to and facing the panel 01).

このような陰極線管において、電子ビームとしては高解
像度化のためにはスポラ1へ形状が小さいこと及びフォ
ーカス特性が良好であること等が要求されている。
In such a cathode ray tube, the electron beam is required to have a small spora 1 and good focus characteristics in order to achieve high resolution.

ところで大電流時のラジアル方向成分の発散による電子
ビームスポット形状の抑制については特公昭55−22
906号公報に示されるような技術が提案されている。
By the way, regarding the suppression of the electron beam spot shape due to the divergence of the radial direction component at the time of large current, Japanese Patent Publication No. 55-22
A technique as shown in Japanese Patent No. 906 has been proposed.

即ち第7図において上記技術は陰極K、第1格子電極G
11、第2格子電極G12、第3格子電極G13、第1
1格子電極G1/lから成る電子銃を備えた陰極線管に
補助格子電極G128を設は所定の電圧配分をすること
により陰極線管の電子銃内での電子ビームは補助格子電
極G123近傍に達したとき、第3格子電極G13の電
界によって急激に減速されて非常に強く集束される結果
、主集束レンズに入射する電子ビームの拡散角は非常に
小さくなり大電流時のビームスポット径を抑制しフォー
カス特性を向上させるものである。
That is, in FIG.
11, second grid electrode G12, third grid electrode G13, first
By setting an auxiliary grid electrode G128 in a cathode ray tube equipped with an electron gun consisting of one grid electrode G1/l and distributing a predetermined voltage, the electron beam in the electron gun of the cathode ray tube reached the vicinity of the auxiliary grid electrode G123. At this time, the electron beam is rapidly decelerated and focused very strongly by the electric field of the third grid electrode G13, and as a result, the diffusion angle of the electron beam incident on the main focusing lens becomes very small, suppressing the beam spot diameter at the time of large current and focusing. It improves the characteristics.

(発明か解決しようとする問題点) 上述の陰極線管では電子銃の印加電圧配分と電極間距離
が密接に関係し、フォーカス特性を向上させるためには
電圧配分と電極間距離を極め高精度に構成する必要があ
る。ざらに補助格子電極が追加されるため、外部接続用
端子であるステムピンを1本追加しなくてはならない。
(Problem to be solved by the invention) In the above-mentioned cathode ray tube, the applied voltage distribution of the electron gun and the distance between the electrodes are closely related, and in order to improve the focusing characteristics, the voltage distribution and the distance between the electrodes must be adjusted to extremely high precision. Must be configured. Since an auxiliary grid electrode is added, one stem pin, which is an external connection terminal, must be added.

しかし、このステムピンは耐電圧14性上からは増加す
ることは極めて不利であり、耐電圧処理を施さなくては
ならず工程及び経費的にも問題がおる。
However, this increase in voltage resistance of the stem pin is extremely disadvantageous in terms of voltage resistance, and it is necessary to perform voltage resistance treatment, which causes problems in terms of process and cost.

本発明は電子銃を構成する電極間に所定の静電レンズを
形成し、所望の電子ビームを得ることを目的とする。
An object of the present invention is to form a predetermined electrostatic lens between electrodes constituting an electron gun to obtain a desired electron beam.

〔発明の構成〕[Structure of the invention]

(問題点を解決するための手段) 本発明は上述の問題点を解決するためになされたもので
あり、少なくとも陰極及び電子ビーム通過孔をもつ複数
の電極を有する電子銃を備えた陰極線管において、前記
複数の電極のうちの少なくとも一部の電極の電子ビーム
通過孔近傍に抵抗層を形成することにより部分的に電位
を調整し、抵抗層形成電極と隣接した電極との間に所定
の静電レンズを形成し目的とする電子ビームを得るもの
である。
(Means for Solving the Problems) The present invention has been made to solve the above-mentioned problems, and is directed to a cathode ray tube equipped with an electron gun having at least a cathode and a plurality of electrodes each having an electron beam passage hole. The potential is partially adjusted by forming a resistive layer near the electron beam passage hole of at least some of the plurality of electrodes, and a predetermined static voltage is created between the resistive layer forming electrode and the adjacent electrode. It forms an electron lens to obtain the desired electron beam.

(作 用) 本発明は陰極線管の電子銃電極の電子ビーム通過孔近傍
に所定の抵抗層を形成することにより、隣接する電極と
の間に静電レンズを形成する。ここで各電極に所定の電
圧を印加することにより抵抗層は負に帯電して抵抗層形
成部分の電位が変化し所望の静電レンズを形成し目的と
する電子ビームを得ることが可能となるものである。
(Function) The present invention forms an electrostatic lens between adjacent electrodes by forming a predetermined resistance layer near the electron beam passage hole of the electron gun electrode of a cathode ray tube. By applying a predetermined voltage to each electrode, the resistive layer is negatively charged and the potential of the resistive layer forming portion changes, forming a desired electrostatic lens and making it possible to obtain the desired electron beam. It is something.

(実施例) 以下本発明の第1の実施例を例えば特開昭54−726
67@公報に示される複数ビーム電子銃に適用して説明
する。第1図は本発明を適用した電子銃の概略断面図で
ある。
(Example) The first example of the present invention will be described below, for example, in Japanese Patent Application Laid-Open No. 54-726.
This will be explained by applying it to the multiple beam electron gun shown in Publication No. 67@. FIG. 1 is a schematic sectional view of an electron gun to which the present invention is applied.

第1図において、電子銃■は図示しない絶縁支持棒にl
f1段部を介して植設されたヒータ(2B)。
In Figure 1, the electron gun ■ is attached to an insulating support rod (not shown).
Heater (2B) implanted through the f1 step.

(2G)、 (2R)、陰極(3B)、 (3G)、 
(3R)、第1グリツド(G1)、第2グリツド(G2
)、第3グリツド(G3)第4グリツド(G4 ) 、
第5グリツド(G5)、第6グリツド(G6)及びコン
バーゼンス電極0からなり、それぞれ陰極(3B)、 
(3G)、 (31i1)の銃軸(4B)、 (4G)
、 (4R)に対応した位置に電子ビーム通過用の開口
部を右しており第1グリツド(G1)、第2グリツド(
G2 ) 、第4グリツド(G4)は板状をなし、前記
第4グリツド(G4)は第2グリツド(G2)と導線で
接続され低電位に保たれており、また前記第3グリツド
(G3)及び第5グリツド(G5)はそれぞれ底部に有
底筒体より形成され、導体にて接続されて約7KVの電
位が与えられており、更に第6グリツド(G6)は底部
に電子ビーム通過用の開口部を有する有底筒体からなり
、コンバーゼンス電極0を介して約25KVの電位が与
えられている。
(2G), (2R), cathode (3B), (3G),
(3R), 1st grid (G1), 2nd grid (G2)
), 3rd grid (G3), 4th grid (G4),
Consists of a fifth grid (G5), a sixth grid (G6), and a convergence electrode 0, each consisting of a cathode (3B),
(3G), (31i1) gun shaft (4B), (4G)
The opening for electron beam passage is located at the position corresponding to (4R), and the first grid (G1) and the second grid (G1) are located on the right.
G2), the fourth grid (G4) has a plate shape, the fourth grid (G4) is connected to the second grid (G2) by a conductor and kept at a low potential, and the third grid (G3) and the fifth grid (G5) are each formed of a cylinder with a bottom, connected by a conductor and given a potential of about 7 KV, and the sixth grid (G6) has a bottom for passing the electron beam. It consists of a bottomed cylindrical body with an opening, and a potential of about 25 KV is applied via a convergence electrode 0.

前述した電子銃において、第2グリツド(G2)の第3
グリツド(G3)側の電極表面の電子ビーム通過孔近傍
のそれぞれ3つの部分に円環状に抵抗層0が形成されい
る。
In the above-mentioned electron gun, the third grid of the second grid (G2)
A resistive layer 0 is formed in an annular shape in each of three portions near the electron beam passage hole on the electrode surface on the grid (G3) side.

次にこの抵抗層について詳細に説明する。Next, this resistance layer will be explained in detail.

第2図は第2グリツド(G2)を第3グリツド(G3)
側から見た正面図である。
Figure 2 shows the second grid (G2) and the third grid (G3).
It is a front view seen from the side.

第2図において(G2)は第2グリツド、■は抵抗層で
ある。
In FIG. 2, (G2) is the second grid, and ▪ is the resistance layer.

ここで抵抗B0の材料として例えば結晶性鉛はう酸塩ガ
ラスを使用する。この鉛はう酸塩ガラス層を第2図に示
すように円環状に第2グリツド(G2)の第3グリツド
(G3)側表面の電子ビーム通過孔■の近傍に形成する
。形成方法は例えば5nOzを30重債%添加し、導電
率が約10−7Ω−1m−1の結晶性鉛はう酸塩ガラス
をニトロセルロースを数%溶かした酢酸ブチルアルコー
ル溶液で溶解し、この溶解した鉛はう酸塩ガラスをマス
クスプレー法で塗布する。このような層を塗布後、最高
温度が約440 ’Cでその保持時間が35分以上ある
炉を通過させると電極表面に結晶性鉛はう酸塩ガラス層
すなわち抵抗層0が形成できる。
Here, for example, crystalline lead borate glass is used as the material of the resistor B0. As shown in FIG. 2, this lead borate glass layer is formed in an annular shape in the vicinity of the electron beam passage hole (2) on the surface of the second grid (G2) on the third grid (G3) side. The formation method is, for example, by dissolving crystalline lead borate glass containing 30% of 5nOz and having an electrical conductivity of approximately 10-7Ω-1m-1 in a butyl acetate alcohol solution containing several percent of nitrocellulose. The molten lead borate glass is applied using a mask spray method. After coating such a layer, it is passed through a furnace with a maximum temperature of about 440'C and a holding time of 35 minutes or more, so that a crystalline lead borate glass layer, ie, a resistance layer 0, can be formed on the electrode surface.

このように形成された抵抗層0を有する第2グリツド(
G2)に所定の電圧を印加すれば、抵抗層0の近傍に負
の電荷が一定ω帯電する。この負電荷と電子ビームの負
電荷が相互に反発して結果として電子ビームのラジアル
方向発散成分を抑制しビームスポット径を実質的に縮小
してフォーカス特性を向上させることが可能となる。
A second grid (
When a predetermined voltage is applied to G2), a negative charge is charged in the vicinity of the resistance layer 0 at a constant ω. This negative charge and the negative charge of the electron beam repel each other, and as a result, it becomes possible to suppress the radial divergence component of the electron beam, substantially reduce the beam spot diameter, and improve focus characteristics.

このように形成された抵抗層により電子ビームのスポッ
ト形状を抑制し所望のフォーカス特性を17ることがで
きる。
The resistive layer thus formed can suppress the spot shape of the electron beam and provide desired focus characteristics.

本実施例によれば従来の電子銃構成電極に抵抗層を形成
するだ(プで電子ビームの)汁−カス特性を向上させる
ことが可能となり、何ら電]※構成の設計を変更する必
要がなく、容易にフォーカス特性を向上した陰極線管を
得ることができる。又、フォーカス特性を向上させるた
めに特公昭55−22906号公報に示されるように補
助電極を追加する手段を用いる必要はない。
According to this embodiment, it is possible to improve the liquid-scum characteristics (of the electron beam) by forming a resistance layer on the conventional electron gun configuration electrode, and there is no need to change the design of the electron gun configuration. Therefore, it is possible to easily obtain a cathode ray tube with improved focus characteristics. Further, there is no need to use means for adding an auxiliary electrode as shown in Japanese Patent Publication No. 55-22906 to improve the focus characteristics.

次に本発明の第2の実施例を説明する。Next, a second embodiment of the present invention will be described.

第3図は第2図と対応して示す第5グリツド(G5)の
第6グリツド(G6)側から見た正面図である。
FIG. 3 is a front view of the fifth grid (G5) seen from the sixth grid (G6) side corresponding to FIG. 2.

第3図において(G5)は第5グリツド、いは抵抗層、
■はサイドビーム通過孔でおる。
In FIG. 3, (G5) is the fifth grid or resistance layer,
■ is through the side beam passage hole.

ここで前記第1の実施例と同様な方法でサイドビーム通
過孔口近傍の管軸から遠い部分に半円弧状に抵抗層0を
形成し各電極に所定の電圧を印加するとこの抵抗層形成
電極と隣接する第6グリツド(G6)との間には第4図
に示されるような非対称静電レンズが形成される。第4
図は第5グリツド(G5)と第6グリツド(G6)の間
の等電位線を示した第1図の要部模式図である。
Here, a resistance layer 0 is formed in a semicircular arc shape in a portion far from the tube axis near the side beam passage hole opening in the same manner as in the first embodiment, and when a predetermined voltage is applied to each electrode, the resistance layer forming electrode An asymmetrical electrostatic lens as shown in FIG. 4 is formed between the grid and the adjacent sixth grid (G6). Fourth
The figure is a schematic diagram of the main part of FIG. 1 showing equipotential lines between the fifth grid (G5) and the sixth grid (G6).

このように形成された非対称静電レンズによりサイドビ
ームは管軸側へ偏向される。
The side beam is deflected toward the tube axis by the asymmetric electrostatic lens formed in this way.

サイドビームを管軸側へ偏向させる手段として特公昭5
2−32714号公報に示されるように主レンズを形成
するための対向する電極のサイドビーム通過孔を偏心さ
せる手段があるが、サイドビーム通過孔のみ偏心させて
高精度に組み立てるには高度の工程管理を必要とする。
As a means of deflecting the side beam toward the tube axis,
As shown in Japanese Patent No. 2-32714, there is a means for decentering the side beam passing holes of opposing electrodes to form the main lens, but it requires a sophisticated process to decenter only the side beam passing holes and assembling them with high precision. Requires management.

本実施例によれば従来の電子銃#4造に抵抗層を形成す
るだCノで電子ビームのコンバージェンス特性を向上さ
せることが可能となり、何ら設計変更する必要がなく、
抵抗層の形状を変化させるだけで所望のコンバージェン
ス特性が得られる。又、電子銃組み立て時も電子ビーム
通過孔は最も容易な同軸設定で行えるため複雑な組み立
て治具と工程管理を行う必要がない。
According to this embodiment, it is possible to improve the convergence characteristics of the electron beam by forming a resistive layer on the conventional electron gun #4, and there is no need to change the design.
Desired convergence characteristics can be obtained simply by changing the shape of the resistive layer. Further, when assembling the electron gun, the electron beam passage hole can be set with the simplest coaxial setting, so there is no need for complicated assembly jigs and process control.

次に本発明の第3の実施例を説明する。Next, a third embodiment of the present invention will be described.

第5図は第3図に対応するもので第5グリツド他は第3
図と同様でおる。ここでセンタービーム通過孔(へ)近
傍には前記第1の実施例と同様な方法で環状に抵抗層■
を形成する。サイドビーム通過孔■近傍には伺図に示す
ように前記第1の実施例と同様にして電子ビーム通過孔
をとり囲み、かつ管軸から遠ざかる方向の面積が大とな
るように、即ち半楕円状に抵抗層0を第1の実施例と同
様な方法で形成する。
Figure 5 corresponds to Figure 3, and the 5th grid and others are the 3rd grid.
It is similar to the figure. Here, in the vicinity of the center beam passage hole, a resistance layer is formed in an annular manner in the same manner as in the first embodiment.
form. As shown in the diagram, near the side beam passage hole 1, a semi-ellipse is formed so as to surround the electron beam passage hole and increase the area in the direction away from the tube axis, as in the first embodiment. A resistive layer 0 is formed in the same manner as in the first embodiment.

本実施例によれば前記第1の実施例と同様な効果が1q
られると同時に前記第2の実施例に示したサイドビーム
の偏向も可能となる。。すなわら本発明はフォーカス特
性のみならずコンバージェンス特性も同時に向上させる
ことができる。
According to this embodiment, the same effect as in the first embodiment can be obtained by 1q
At the same time, the side beams shown in the second embodiment can also be deflected. . In other words, the present invention can improve not only focus characteristics but also convergence characteristics at the same time.

また抵抗層■の形状は上記実施例に限定されるものでは
なく適用する電子銃に応じて選定すればよく所望の特性
を電子銃に持たせることができ電極構成の設計を変更す
る必要がない。
Furthermore, the shape of the resistive layer (2) is not limited to the above embodiment, but can be selected depending on the electron gun to which it is applied, and the desired characteristics can be imparted to the electron gun, and there is no need to change the design of the electrode configuration. .

尚、本実施例では第2グリツド(G2)と第5グリツド
(G5)に抵抗層を形成したが、第2グリツド(G2)
及び第5グリツド(G5)に限定されることなく、どの
電極に形成しても同様の効果が19られる。また抵抗層
として5nOzを○む鉛はう酸塩カラスを使用したが、
これに限定されるものではない。
In this example, the resistance layer was formed on the second grid (G2) and the fifth grid (G5), but the resistance layer was formed on the second grid (G2).
The same effect can be obtained no matter which electrode is formed, without being limited to the fifth grid (G5). In addition, a lead borate glass with 5nOz was used as the resistance layer, but
It is not limited to this.

(発明の効果〕 本発明によれば陰極線管の電子銃電極に抵抗層を形成し
、又抵抗層の形状を選定することにより、何ら電極構成
の設計を変更することなくコンバージェンス特性やフォ
ーカス特性を向上させることができる。
(Effects of the Invention) According to the present invention, by forming a resistance layer on the electron gun electrode of a cathode ray tube and selecting the shape of the resistance layer, convergence characteristics and focus characteristics can be improved without changing the design of the electrode configuration. can be improved.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の第1の実施例を示す電子銃部の概略断
面図、第2図は第1図の電子銃を構成する要部の電極の
正面図、第3図は本発明の第2の実施例を示す電子銃電
極の正面図、第4図は非対称静電レンズを説明するため
の電子銃電極の要部模式図、第5図は本発明の第3の実
施例を示す電子銃部(※の正面図、第6図はカラー受@
管の概略断面図、第7図は従来の電子銃の電極構成を示
す模式図である。 (G2)・・・第2グリツド (G5)・・・第5グリ
ツド(6)・・・抵抗層     ■・・・サイドビー
ム通過孔(8)・・・センタービーム通過孔 代理人 弁理士 則 近 憲 佑 同  大胡典夫 第  1 図 fg2図 第3図 第  4 図 第  5 図 第  6 図 第7図 手続補正力〈自発) ”06“V、4.化日
FIG. 1 is a schematic cross-sectional view of an electron gun section showing a first embodiment of the present invention, FIG. 2 is a front view of an electrode of a main part constituting the electron gun of FIG. 1, and FIG. A front view of an electron gun electrode showing a second embodiment, FIG. 4 is a schematic diagram of a main part of an electron gun electrode for explaining an asymmetric electrostatic lens, and FIG. 5 shows a third embodiment of the present invention. Electron gun section (*Front view, Figure 6 is color receiver @
A schematic cross-sectional view of the tube, and FIG. 7 is a schematic diagram showing the electrode configuration of a conventional electron gun. (G2)...Second grid (G5)...Fifth grid (6)...Resistance layer ■...Side beam passage hole (8)...Center beam passage hole Agent Patent attorney Nori Chika Yudo Ken Norio Ogo No. 1 Figure fg2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Procedural correction power (spontaneous) ``06''V, 4. date of change

Claims (1)

【特許請求の範囲】 1)少なくとも陰極及び電子ビーム通過孔をもつ複数の
電極を有する電子銃を備えた陰極線管において、前記複
数の電極のうちの少なくとも一部の電極の少なくとも電
子ビーム通過孔近傍に抵抗層を形成したことを特徴とす
る陰極線管。 2)前記抵抗層を前記電子ビーム通過孔に沿って環状に
形成することを特徴とする特許請求の範囲第1項記載の
陰極線管。 3)前記電子銃の電子ビームが複数電子ビームからなり
前記抵抗層を前記電子ビーム通過孔近傍の管軸から遠い
部分に形成することを特徴とする特許請求の範囲第1項
及び第2項記載の陰極線管。
[Scope of Claims] 1) In a cathode ray tube equipped with an electron gun having a plurality of electrodes each having at least a cathode and an electron beam passage hole, at least a portion of at least some of the plurality of electrodes is located near the electron beam passage hole. A cathode ray tube characterized in that a resistance layer is formed on the cathode ray tube. 2) The cathode ray tube according to claim 1, wherein the resistance layer is formed in an annular shape along the electron beam passage hole. 3) The electron beam of the electron gun is composed of a plurality of electron beams, and the resistive layer is formed in a portion far from the tube axis near the electron beam passage hole. cathode ray tube.
JP5950886A 1986-03-19 1986-03-19 Cathode-ray tube Pending JPS62217542A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5950886A JPS62217542A (en) 1986-03-19 1986-03-19 Cathode-ray tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5950886A JPS62217542A (en) 1986-03-19 1986-03-19 Cathode-ray tube

Publications (1)

Publication Number Publication Date
JPS62217542A true JPS62217542A (en) 1987-09-25

Family

ID=13115268

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5950886A Pending JPS62217542A (en) 1986-03-19 1986-03-19 Cathode-ray tube

Country Status (1)

Country Link
JP (1) JPS62217542A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100887896B1 (en) 2007-12-28 2009-03-11 엘지.필립스 디스플레이 주식회사 Cathode ray tube including electron gun

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100887896B1 (en) 2007-12-28 2009-03-11 엘지.필립스 디스플레이 주식회사 Cathode ray tube including electron gun

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