JPS6221636B2 - - Google Patents
Info
- Publication number
- JPS6221636B2 JPS6221636B2 JP7340079A JP7340079A JPS6221636B2 JP S6221636 B2 JPS6221636 B2 JP S6221636B2 JP 7340079 A JP7340079 A JP 7340079A JP 7340079 A JP7340079 A JP 7340079A JP S6221636 B2 JPS6221636 B2 JP S6221636B2
- Authority
- JP
- Japan
- Prior art keywords
- plating
- electrode
- layer
- forming
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000007747 plating Methods 0.000 claims description 17
- 239000007788 liquid Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000010408 film Substances 0.000 description 11
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910015363 Au—Sn Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- -1 potassium ferricyanide Chemical group 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 235000011121 sodium hydroxide Nutrition 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 1
- XEKAUTDWPYQNFU-UHFFFAOYSA-N chlorane Chemical compound Cl.Cl.Cl XEKAUTDWPYQNFU-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
- OKJMLYFJRFYBPS-UHFFFAOYSA-J tetraazanium;cerium(4+);tetrasulfate Chemical compound [NH4+].[NH4+].[NH4+].[NH4+].[Ce+4].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O OKJMLYFJRFYBPS-UHFFFAOYSA-J 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
Landscapes
- Electronic Switches (AREA)
Description
【発明の詳細な説明】
本発明はサーマルヘツドの製造方法に関するも
ので、特に電極抵抗が低くメツキ膜の付着力が強
力でボンデイング性に優れた電極を有するサーマ
ルヘツドを提供するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a thermal head, and in particular provides a thermal head having electrodes with low electrode resistance, strong plating film adhesion, and excellent bonding properties.
一般に、下層がCrで上層がAuまたはCuからな
る２層構造の電極を有する薄膜型のサーマルヘツ
ドにおいては、相互拡散反応により電極抵抗が高
くなるという欠点を有しており、このため従来で
はホトエツチング技術により一端が共通電極に接
続されかつ他端が個別電極に接続される複数個の
発熱素子を形成し、スパツタ技術によりSiC等の
耐摩耗層を形成した後、メツキにより電極厚さを
厚くすることが行なわれていたが、このような方
法の場合、次のような幾つかの問題があつた。 In general, thin-film thermal heads that have a two-layer electrode structure with a lower layer of Cr and an upper layer of Au or Cu have the disadvantage that the electrode resistance increases due to interdiffusion reactions. Using technology, multiple heating elements are formed with one end connected to a common electrode and the other end connected to individual electrodes. After forming a wear-resistant layer such as SiC using sputtering technology, the electrode thickness is increased by plating. However, this method had several problems as follows.
その一つは、耐摩耗層形成時の高温のために、
下層のCr原子が拡散により上層のAuまたはCuの
表面に達し、Cr酸化膜が形成されるために、こ
の上に形成したメツキ膜の付着力が不充分である
という問題である。 One of them is due to the high temperature during the formation of the wear-resistant layer.
The problem is that Cr atoms in the lower layer diffuse to the surface of the Au or Cu upper layer, forming a Cr oxide film, resulting in insufficient adhesion of the plating film formed thereon.
また、別の問題点は、耐摩耗層形成のためのス
パツタ工程が10-2Torr程度のアルゴン雰囲気中
であるために平均自由工程が短かく、しかもSiC
等のスパツタ分子が狭い隙間に侵入する性質があ
ることから、スパツタマスクの下の電極にもSiC
等の分子がまわり込み、AuまたはCuの上層電極
上に付着するため、メツキ膜の付着力が弱いとい
う問題である。 Another problem is that the sputtering process for forming the wear-resistant layer is in an argon atmosphere of about 10 -2 Torr, so the mean free path is short, and SiC
SiC is also used in the electrode under the spatter mask because spatter molecules such as
The problem is that the adhesion of the plating film is weak because the molecules such as the following wrap around and adhere to the upper layer electrode of Au or Cu.
このような問題を解決するために上層電極の
AuまたはCuの表面をエツチングで除去してから
60℃でAuメツキを行なつたところ、付着力が弱
いという問題はかなり改善されたが、Auメツキ
膜上にCrの酸化物が生じる問題が発生した。こ
の結果、自動プローバにより抵抗測定すると、プ
ローブピンがCr酸化物を介して電極に接触する
ために、測定値が高くなり、不正確となる問題が
発生すると同時に、Snメツキを施したフイルム
キヤリアをボンデイングする時にAu―Sn共晶反
応が起こり難く、Snが玉状になる問題が発生し
た。この原因は、Auメツキ膜が一般に緻密でな
いために下層のCrが60℃のメツキ温度で粒界拡
散してAuメツキ膜の表面に達し、Cr酸化物を形
成したものと推測される。 To solve this problem, the upper layer electrode
After removing the Au or Cu surface by etching
When Au plating was performed at 60°C, the problem of weak adhesion was considerably improved, but the problem of Cr oxides forming on the Au plating film occurred. As a result, when resistance is measured using an automatic prober, the probe pin comes into contact with the electrode through the Cr oxide, resulting in a high and inaccurate measured value. During bonding, the Au-Sn eutectic reaction was difficult to occur, causing a problem in which the Sn formed into beads. The reason for this is presumed to be that since the Au plating film is generally not dense, the Cr in the lower layer diffuses through grain boundaries at the plating temperature of 60°C, reaches the surface of the Au plating film, and forms Cr oxide.
本発明はこのような問題点を解決するために開
発したものであり、以下本発明の一実施例による
サーマルヘツドの製造方法を第１図および第２図
の図面を参照しながら説明する。 The present invention was developed to solve these problems, and a method for manufacturing a thermal head according to an embodiment of the present invention will be described below with reference to the drawings of FIGS. 1 and 2.
グレーズドセラミツク基板上に発熱素子用に
SiTa、電極用に0.2μのCr、0.6μのAuを順次蒸
着により形成した後、ホトエツチング技術により
一端が共通電極に接続され、他端が個別電極に接
続される発熱素子を形成し、330℃でSiC膜を形
成した後、KI：I2：H2O＝２：１：10（重量比）
の組成からなる温度25℃のAuを溶解する液に10
秒間浸漬した後、水洗し、その後フエリシアン化
カリ：苛性ソーダ：水＝９：４：35（重量比）の
組成からなる温度25℃のCrエツチング液に20秒
間浸漬し、水洗した後、SiCで被覆されない電極
上を60℃の温度でAuメツキを行なつた。 For heating elements on glazed ceramic substrate
After forming SiTa, 0.2μ of Cr for electrodes, and 0.6μ of Au for electrodes by sequential vapor deposition, a heating element with one end connected to the common electrode and the other end connected to the individual electrodes was formed using photoetching technology. After forming a SiC film with KI:I 2 :H 2 O=2:1:10 (weight ratio)
10 in a solution dissolving Au at a temperature of 25°C with the composition of
After immersing for seconds, washing with water, then immersing for 20 seconds in a Cr etching solution with a composition of potassium ferricyanide: caustic soda: water = 9:4:35 (weight ratio) at a temperature of 25°C, washing with water, and then coating with SiC. Au plating was carried out at a temperature of 60°C on the electrode that was not used.
このような工程で製造したサーマルヘツドの抵
抗値分布を測定するために、自動プローバでメツ
キ電極上にプローブピンを立てて抵抗値を測定し
たところ、前述のようなCr酸化物が原因となる
測定値の不正確の問題は発生しなかつた。また、
Snメツキを施したフイルムキヤリアをボンデイ
ングした時にもAu―Sn共晶反応は均一に起り、
玉状のSnは発生しなかつた。 In order to measure the resistance value distribution of the thermal head manufactured using this process, we used an automatic prober to set up a probe pin on the plated electrode and measured the resistance value. However, as mentioned above, the measurement was caused by Cr oxide. There were no problems with incorrect values. Also,
Even when bonding a Sn-plated film carrier, the Au-Sn eutectic reaction occurs uniformly,
Ball-shaped Sn was not generated.
一方、比較のために上述の本発明の製造工程と
は逆に、まずCrエツチング液に浸漬した後、Au
を溶解する液に浸漬した後、Auメツキをしたと
ころ、自動プローバによる抵抗値測定は不正確と
なり、ボンデイング時のAu―Sn共晶反応が均一
に起こらず、玉状のSnが発生した。 On the other hand, for comparison, contrary to the manufacturing process of the present invention described above, the Au
When Au plating was performed after immersing it in a solution that dissolves Sn, resistance measurements using an automatic prober were inaccurate, and the Au-Sn eutectic reaction during bonding did not occur uniformly, resulting in the formation of beads of Sn.
この２つの方法の製造方法によるAuメツキ膜
表面状態の差異を調べるために、オージエ電子分
光により表面分析したところ、前者、すなわち本
発明の方法では第１図に示すように表面にはCr
が存在しないが、後者の方法では第２図に示すよ
うに、表面にCrおよびＯが存在することが判つ
た。 In order to investigate the difference in the surface state of the Au plating film between these two manufacturing methods, surface analysis was performed using Auger electron spectroscopy.
However, in the latter method, as shown in FIG. 2, it was found that Cr and O were present on the surface.
以上のように本発明のサーマルヘツドの製造方
法によれば、電極抵抗が低くメツキ膜の付着力が
強力でポンデイング性に優れた電極を有するサー
マルヘツドを容易に得ることができる。 As described above, according to the method of manufacturing a thermal head of the present invention, it is possible to easily obtain a thermal head having an electrode with low electrode resistance, strong adhesion of the plating film, and excellent bonding properties.
なお、本発明において、メツキの前処理液の
Auを溶解する液としては、I2＋KI、王水等が使
用でき、またCuを溶解する液としては塩化第２
鉄、塩化第２銅等が使用できる。また、Crまた
はCr酸化物を溶解する液としては、フエリシア
ン化カリ、苛性ソーダの混液の他に、硝酸セリウ
ムアンモン系、あるいは硫酸セリウムアンモン系
の液を使用することができる。さらに、メツキ方
法としても、電気メツキ、無電解メツキのいずれ
の方法を用いてもよい。 In addition, in the present invention, the pretreatment liquid for plating is
As a liquid for dissolving Au, I 2 +KI, aqua regia, etc. can be used, and as a liquid for dissolving Cu, chloride dichloride can be used.
Iron, cupric chloride, etc. can be used. Further, as a liquid for dissolving Cr or Cr oxide, in addition to a mixed liquid of potassium ferricyanide and caustic soda, a cerium ammonium nitrate type liquid or a cerium ammonium sulfate type liquid can be used. Further, as the plating method, either electric plating or electroless plating may be used.
第１図は本発明によるサーマルヘツドの製造方
法によりメツキした場合のメツキ表面の原子分布
を示す図、第２図は他の方法によりメツキした場
合のメツキ表面の原子分布を示す図である。
FIG. 1 is a diagram showing the atomic distribution on the plated surface when plated by the method of manufacturing a thermal head according to the present invention, and FIG. 2 is a diagram showing the atomic distribution on the plated surface when plated by another method.
Claims (1)
上層がAuまたはCuの２層の電極を形成するとと
もに、前記発熱素子を被覆する耐摩耗層を形成し
た後、AuまたはCuを溶解する液に浸漬し、その
後CrまたはCr酸化物を溶解する液に浸漬した
後、前記耐摩耗層により覆われていない電極上に
メツキをすることを特徴とするサーマルヘツドの
製造方法。1 After forming two-layer electrodes with a lower layer of Cr and an upper layer of Au or Cu that are connected to a plurality of heating elements, and forming a wear-resistant layer that covers the heating elements, a liquid that dissolves Au or Cu is formed. 1. A method for manufacturing a thermal head, comprising: immersing the head in a liquid that dissolves Cr or Cr oxide, and then plating the electrode not covered with the wear-resistant layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7340079A JPS55166269A (en) | 1979-06-11 | 1979-06-11 | Manufacture of thermal head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7340079A JPS55166269A (en) | 1979-06-11 | 1979-06-11 | Manufacture of thermal head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55166269A JPS55166269A (en) | 1980-12-25 |
| JPS6221636B2 true JPS6221636B2 (en) | 1987-05-13 |
Family
ID=13517100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7340079A Granted JPS55166269A (en) | 1979-06-11 | 1979-06-11 | Manufacture of thermal head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55166269A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5357269A (en) * | 1992-06-01 | 1994-10-18 | Eastman Kodak Company | Electrical print head for thermal printer |
-
1979
- 1979-06-11 JP JP7340079A patent/JPS55166269A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55166269A (en) | 1980-12-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3760238A (en) | Fabrication of beam leads | |
| Stremsdoerfer et al. | Autocatalytic deposition of gold and palladium onto n‐GaAs in acidic media | |
| US4717591A (en) | Prevention of mechanical and electronic failures in heat-treated structures | |
| Rairden et al. | Interdiffusion in thin conductor films—chromium/gold, nickel/gold and chromium silicide/gold | |
| US3413711A (en) | Method of making palladium copper contact for soldering | |
| US4096510A (en) | Thermal printing head | |
| JPH05267299A (en) | Semiconductor device | |
| US4478690A (en) | Method of partially metallizing electrically conductive non-metallic patterns | |
| Morabito et al. | Material characterization of Ti-Cu-Ni-Au (TCNA)-a new low cost thin film conductor system | |
| JPS6221636B2 (en) | ||
| US3415679A (en) | Metallization of selected regions of surfaces and products so formed | |
| Fisher et al. | Termination materials for thin film resistors | |
| JPH02166294A (en) | Plated base material | |
| US5336368A (en) | Method for depositing conductive metal traces on diamond | |
| JP3909035B2 (en) | Plating pretreatment liquid and plating pretreatment method | |
| US3476531A (en) | Palladium copper contact for soldering | |
| JPH0697663B2 (en) | Method for manufacturing semiconductor device | |
| JPS6325493B2 (en) | ||
| JPS625358B2 (en) | ||
| JPH0398210A (en) | Complex metal plating wire | |
| JPH06232128A (en) | Semiconductor device and manufacture thereof | |
| JPH0197666A (en) | Thermal head and manufacture thereof | |
| JPH06109411A (en) | Strain element | |
| JPS63168043A (en) | Lead frame | |
| Breiter et al. | Identification of Gold Islands on Copper‐Plated Wire Surfaces by Cyclic Voltammetry |