JPS6221245A - Sealing device - Google Patents

Sealing device

Info

Publication number
JPS6221245A
JPS6221245A JP16023585A JP16023585A JPS6221245A JP S6221245 A JPS6221245 A JP S6221245A JP 16023585 A JP16023585 A JP 16023585A JP 16023585 A JP16023585 A JP 16023585A JP S6221245 A JPS6221245 A JP S6221245A
Authority
JP
Japan
Prior art keywords
temperature
furnace
partitions
ics
sealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16023585A
Other languages
Japanese (ja)
Inventor
Takashi Araki
隆 荒木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Renesas Semiconductor Package and Test Solutions Co Ltd
Original Assignee
Hitachi Hokkai Semiconductor Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Hokkai Semiconductor Ltd, Hitachi Ltd filed Critical Hitachi Hokkai Semiconductor Ltd
Priority to JP16023585A priority Critical patent/JPS6221245A/en
Publication of JPS6221245A publication Critical patent/JPS6221245A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To facilitate the control of the temperature of a sealing device and to improve the throughput thereof by a method wherein the furnace is sectioned into plural partitions, and also, infrared heaters are arranged in every partition, and moreover, the heating temperature to semiconductor devices is controlled in partition unit. CONSTITUTION:Partitions D and E in a furnace 11 respectively set the temperature atmospheres thereof into such a temperature atmosphere as to be turned into that of a region A heating ICs to the heating temperatures thereof, a partition F set the temperature atmosphere thereof into such a temperature atmosphere as to be turned into that of a region B keeping the ICs at a constant temperature, and partitions G and H in the furnace 11 respectively set the temperature atmospheres thereof into such a temperature atmosphere as to be turned into that of a region C cooling the ICs at a constant cooling rate. Then, a conveyor 10 is actuated, and when the numerous ICs are carried in the furnace 11, the temperature of the partitions D and E show a dropping tendency. If so, in correspondence to that, the thermocouplers 16 of the regions D and E transfer the information 17 to a control part 4, the control part 4 compares the set temperature being memorized therein with the information 17, the temperature difference component is heated by infrared heaters 13a in the partitions D and E and the temperatures of the partitions D and E are both made to approach the setpoint. Similarly, the temperatures of the partitions F, G and H are also controlled respectively in such a way as to become equal to the setpoints of the regions B and C in the partitions F, G and H.

Description

【発明の詳細な説明】 〔技術分野〕 本発明は、被加熱体を所望の温度グロフテイルにて加熱
する技術に適用して有効な技術に関するもので、たとえ
ば、ガラスを封止材とする半導体装置を封止する技術に
利用して特に有効な技術に関するものである。
Detailed Description of the Invention [Technical Field] The present invention relates to a technique that is effective when applied to a technique of heating an object to be heated at a desired temperature globtail, for example, a semiconductor device using glass as a sealing material. The present invention relates to a technique that is particularly effective when used as a sealing technique.

〔背景技術〕[Background technology]

セラミックスとセラミックス、あるいはその中間にリー
ドフレームが介在する場合は、一般に低融点ガラスを封
止材として用いろことが多い。第3図は封止時の温度プ
ロファイルの一例であり、これに従ってガラス溶解−溶
着−冷却を行なうことでガラスにクラックが生じること
もなく、気密性の高い半導体装置を得ている。この温度
プロファイル通りに容易に温度制御ができる封止装置と
して、工業調査会発行、電子材料1983年別冊超LS
I製造、試験装置ガイドブックP、154に開示されて
いるよ5なコンベヤ炉方式が広く用いられている。第4
図は従来のコンベア炉方式の封止装置側部断面図である
。、1は略筒状の封止炉で、その周辺には磁性管圧電熱
線を巻いたヒータ2が複数配設され、さらにその外側に
は外部に熱が放散するのを防止するための断熱材3が封
止炉1を囲って配設されている。4はコンベヤで、被封
正体である半導体装置(以下ICという)7を搬入口5
から搬出口6まで所定の速度で移動できるようになって
いる。
When a lead frame is interposed between ceramics or ceramics, low-melting glass is generally used as the sealing material. FIG. 3 shows an example of a temperature profile during sealing, and by performing glass melting, welding, and cooling according to this, a semiconductor device with high airtightness is obtained without cracking the glass. As a sealing device that can easily control the temperature according to this temperature profile, the electronic material 1983 special issue Super LS published by Kogyo Research Association
The conveyor furnace system disclosed in I Manufacturing and Testing Equipment Guidebook P, 154 is widely used. Fourth
The figure is a side sectional view of a conventional conveyor furnace type sealing device. , 1 is a substantially cylindrical sealed furnace, around which a plurality of heaters 2 each made of a magnetic tube piezoelectric heating wire are arranged, and furthermore, on the outside thereof, a heat insulating material is provided to prevent heat from dissipating to the outside. 3 are arranged surrounding the sealed furnace 1. 4 is a conveyor, and a semiconductor device (hereinafter referred to as an IC) 7, which is an encapsulated object, is transported to a conveyor port 5.
It is possible to move at a predetermined speed from to the exit 6.

このような封止装置を用いて、第3図のように一定の加
熱速度を示す領域A、温度Tで一定な領域B、一定の冷
却速度を示す領域C9というような温度プロファイルと
なるように、制止炉1内を空の状態で設定したとしても
、熱容量が大であるセラミックス製のICが多数封止炉
1内に搬入されると急激に温度が下がってしまう。IC
を炉内に流し始めたときに生じるこのような温度降下を
押えるためヒータ2の温度を上げたとしても、ヒータ2
から封止炉1への放射、封止炉1の外壁から内壁までの
熱伝導、封止炉1の内壁からIC表面へ放射というよう
に各段階を経て熱が伝達されるため、所定の温度プロフ
ァイルに回復するまで長時間を要するとともにその温度
制御は困難であった。また、ICの炉流し終わりにおい
ては、前述とは逆に炉内に流れるICの個数の減少とと
もに炉内全体の熱容1が減少するがヒータ2の強度がか
わらないため所定の温度プロファイルよりも炉内温度が
高くなってしまう。そのため、ヒータ2をオフにして加
熱をやめても所定の温度プロファイルに回復するまで長
時間を要していた。このような問題を解決するため、炉
流し始めと炉流し。
By using such a sealing device, as shown in Fig. 3, a temperature profile is created such as region A exhibiting a constant heating rate, region B exhibiting a constant temperature T, and region C9 exhibiting a constant cooling rate. Even if the inside of the sealing furnace 1 is set to be empty, if a large number of ICs made of ceramics having a large heat capacity are carried into the sealing furnace 1, the temperature will drop rapidly. IC
Even if the temperature of heater 2 is increased to suppress the temperature drop that occurs when the water starts flowing into the furnace,
Since heat is transferred through each stage, such as radiation from to the sealing furnace 1, heat conduction from the outer wall of the sealing furnace 1 to the inner wall, and radiation from the inner wall of the sealing furnace 1 to the IC surface, the predetermined temperature is It took a long time to recover to the profile, and temperature control was difficult. Furthermore, at the end of the IC flow in the furnace, contrary to the above, the heat capacity 1 of the entire furnace decreases as the number of ICs flowing into the furnace decreases, but since the strength of the heater 2 does not change, the temperature is lower than the predetermined temperature profile. The temperature inside the furnace becomes high. Therefore, even if the heater 2 is turned off to stop heating, it takes a long time to recover to a predetermined temperature profile. In order to solve this problem, we have developed a furnace sink and a furnace sink.

終わりにはダミー治具(ICと熱容量が同じもの)を流
して、常に炉内の全体の熱容量が変動しないようにして
、所定の温度プロファイルに維持することが考えられる
が、ダミー治具を流す分作業能率が悪いとともにスルー
ブツトも悪いという問題があった。
At the end, it is conceivable to run a dummy jig (with the same heat capacity as the IC) so that the overall heat capacity in the furnace does not fluctuate and maintain a predetermined temperature profile. There were problems in that the efficiency of the division work was poor and the throughput was also poor.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、スルプントの向上できろ封止技術を提
供するものである。
It is an object of the present invention to provide a sealing technique that can improve sulpunto.

本発明の目的は、封止装置の温度制御を容易に行なうた
めの技術を提供するものである。
An object of the present invention is to provide a technique for easily controlling the temperature of a sealing device.

本発明の前記ならびにそのほかの目的と新規な特徴は、
本明細書の記述および添付図面からあきらかくなるであ
ろう。
The above and other objects and novel features of the present invention include:
It will become clear from the description of this specification and the accompanying drawings.

〔発明の概要〕[Summary of the invention]

本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、下記のとおりである。
A brief overview of typical inventions disclosed in this application is as follows.

すなわち、封止炉を複数に区画し、谷区画ごとに赤外線
ヒータを配設するととも、に、各区画単位にICの温度
を制御する手段を設けることにより、所望の温度プロフ
ァイルに設定することが容易となり、また各区画単位で
、しかも赤外線ヒータで放射加熱するため、温度が変動
しても短時間で所定の温度プロファイルに回復させるこ
とが可能となるものである。
That is, by dividing the sealing furnace into a plurality of sections, arranging an infrared heater in each valley section, and providing means for controlling the temperature of the IC in each section, it is possible to set a desired temperature profile. Furthermore, since radiant heating is performed in each section using an infrared heater, even if the temperature fluctuates, it is possible to restore the predetermined temperature profile in a short time.

〔実施例〕〔Example〕

第1図は、本発明の一実施例である封止装置の側部概略
断面図、第2図は、第1図の■−■線断面図である、以
下、図を用いて本発明の一実施例である封止装置につい
て説明する。制止炉11はレンガ等の断熱材で構成され
、長手方向に対して区画壁12により炉入口部、炉中央
部、炉出口部の少なくとも3つに区画されている。本実
施例では一例としてり、E、F、G、Hの5つに区画さ
れている。13は封止炉11の長手方向に対して直交方
向に、各区画ごとに複数配列した赤外線ヒータである、
それらの強度は各々温度制御部14からの制御信号15
で独立制御されろようになっている。16は各区画D−
Hにそれぞれ少なくとも1個配設された熱検出装置、例
えば熱電対であり、各熱電対の温度情報(以下単に情報
という)17は温度制御部14に伝達されるようになっ
ている。前記温度制御部14は、あらかじめ封止するた
めの温度プロファイルのデータを記憶している記憶部と
、前記データと熱電対16からの情報17を比較する比
較部と、前記比較部の結果に基づき赤外線ヒータ15の
強度を調節するための制御信号送出部を有している。な
お、各熱電対16はICl3の近傍に配設してIC表面
温度と熱電対の温度がほぼ一致するようにしている。1
9は金網状のコンベヤで、炉入口20から炉出口21ま
で各区画壁12に設けている開口部22を通して複数の
ICl3を所定の速度で搬送できるようになっている。
Fig. 1 is a side schematic sectional view of a sealing device which is an embodiment of the present invention, and Fig. 2 is a sectional view taken along the line ■-■ in Fig. 1. A sealing device which is one embodiment will be described. The restraint furnace 11 is made of a heat insulating material such as brick, and is partitioned in the longitudinal direction by a partition wall 12 into at least three parts: a furnace inlet, a furnace center, and a furnace outlet. In this embodiment, it is divided into five sections, E, F, G, and H, as an example. 13 is a plurality of infrared heaters arranged in each section in a direction perpendicular to the longitudinal direction of the sealed furnace 11;
Their intensities are determined by the control signal 15 from the temperature control section 14, respectively.
It is designed to be independently controlled. 16 is each section D-
At least one heat detection device, for example a thermocouple, is disposed in each of the thermocouples H, and temperature information (hereinafter simply referred to as information) 17 of each thermocouple is transmitted to the temperature control section 14. The temperature control section 14 includes a storage section that stores temperature profile data for sealing in advance, a comparison section that compares the data with information 17 from the thermocouple 16, and a comparison section that compares the data with information 17 from the thermocouple 16. It has a control signal sending section for adjusting the intensity of the infrared heater 15. Note that each thermocouple 16 is arranged near the ICl 3 so that the IC surface temperature and the temperature of the thermocouple almost match. 1
Reference numeral 9 denotes a wire mesh conveyor, which is capable of conveying a plurality of ICl3 at a predetermined speed from the furnace inlet 20 to the furnace outlet 21 through openings 22 provided in each partition wall 12.

23はコンベヤ19の支持部材である。23 is a support member for the conveyor 19.

次に動作について説明する。まず封止炉1内が空の状態
で各区画D−Hに配設した熱電対16からの情報17と
温度制御部14の記憶部に記憶している温度プr:Iフ
ァイルのデータとを比較しながら制御信号15を送出し
て各々の赤外線ヒータ13の強度ヲ調節しつつ加熱し、
封止炉1内を例えば第3図に示す温度プロファイルに設
定する。
Next, the operation will be explained. First, while the sealed furnace 1 is empty, the information 17 from the thermocouples 16 arranged in each compartment D-H and the data of the temperature pr:I file stored in the storage section of the temperature control section 14 are While comparing, the control signal 15 is sent out and the intensity of each infrared heater 13 is adjusted while heating.
The inside of the sealed furnace 1 is set to a temperature profile shown in FIG. 3, for example.

このとき、例えば区画り、EはICを一定の加熱速度に
加熱するAS域の温度雰囲気に、区画FはICの一定の
温度に維持するB領域の温度雰囲気に、区画0.1(は
ICを一定の冷却速度で冷却するC領域の温度と囲気と
なるように設定する。その後コンベヤ19を動かして整
列配置した多数のICl3を炉内に搬入する。区画Aで
は常温のICl3がつきつぎと搬入されるため、熱がI
Cに吸収されて区画A内の温度が低下傾向をしめす、区
画Aの熱電対16aはこの状態を情報17aとして温度
制御部」4へ伝達する、温度制御81514では情報1
7aと記憶部に記憶している温度プロファイルを比較部
にて比較し、その温度差分を補正するために必要なだけ
、赤外線ヒータ13aの強度を強める、このような調節
を各区画E−Hごとに行ない、炉中が所定の温度プロフ
ァイルとなるように設定している。また、ICの炉流し
終了のさい、コンベヤ上へのIC供給を停止すると、I
Cの移動とともに各区画内のICの数量が変化する。す
なわち、ICの移動とともに熱容量の大きなICの数量
が減少するため、各区画の温度が所定の温度プロファイ
ルよりも高くなる。しかしながら、熱電対16で常に各
区画内の温度を測定し、その情報17を温度制御部14
−・伝達しフィードバックしているので、各区画同温度
と温度プロファイルのずれを補正するため、赤外線ヒー
タの強度を必要なだけ弱め、即座に所定の温度プロファ
イルに回復せしめることができるようになっている。
At this time, for example, section E is the temperature atmosphere of the AS region that heats the IC to a constant heating rate, section F is the temperature atmosphere of the B region that maintains the IC at a constant temperature, and section 0.1 (is the temperature atmosphere of the IC The temperature and surrounding atmosphere of zone C are set to be the same as that of zone C, which is cooled at a constant cooling rate.Then, the conveyor 19 is moved to carry a large number of aligned ICl3 into the furnace.In section A, ICl3 at room temperature is poured one after another. Because it is brought in, the heat is
The thermocouple 16a of the compartment A transmits this state as information 17a to the temperature control unit 4.The temperature control unit 81514 transmits the information 1 as information 17a.
7a and the temperature profile stored in the storage section in the comparing section, and the intensity of the infrared heater 13a is increased as necessary to correct the temperature difference. Such adjustment is made for each section E-H. The inside of the furnace is set to have a predetermined temperature profile. In addition, if the supply of ICs onto the conveyor is stopped when the ICs are finished flowing through the furnace, the I
As C moves, the number of ICs in each section changes. That is, as the ICs move, the number of ICs with large heat capacities decreases, so the temperature of each section becomes higher than the predetermined temperature profile. However, the thermocouple 16 constantly measures the temperature within each compartment, and the information 17 is sent to the temperature controller 14.
- Since the temperature is transmitted and fed back, it is now possible to weaken the intensity of the infrared heater as necessary and immediately restore the predetermined temperature profile in order to correct the difference between the temperature profile and the same temperature in each section. There is.

上述した実施例では、あらかじめ封止炉11の各区画の
温度を、封止するために必要な温度プロファイルに設定
しておき、各区画の温度が前記温度プロファイルから外
れた際に、各区画の各独立制御された赤外線ヒータの強
度を変え補正するという温度制御方式をとっている。し
かしながら、封止炉内の温度が急激に変化するのは、封
止炉内にICを流し始めた際及びICの炉流し終了の際
、すなわち封止炉内のICの数量が変化するときである
ことに着目し、ICの炉流し始め時と炉流し終わり時の
各区画の温度の変動を抑制できろようにあらかじめ各赤
外線ヒータの強度を設定しておくようにしても良い、 なお、赤外線ヒータは被封正体の材質、色等により影響
され難い遠赤外を放射するものであることが好ましい、 〔効果〕 (1)区画壁で封止炉を複数に区画するとともに、各区
画ごとに赤外線ヒータと熱電対を配設し、かつ前記熱電
対の情報に基づいて赤外線ヒータの強度を調節せしめる
ことにより、各区画ごとに独立して温度制御を行なうこ
とができるので、所望の温度グロファイルに設定するこ
とが容易であり、たとえ区画内の温度が所定の温度プロ
ファイルから外れたとしても迅速に回復させることがで
きるという効果が得られる。
In the embodiment described above, the temperature of each compartment of the sealing furnace 11 is set in advance to the temperature profile necessary for sealing, and when the temperature of each compartment deviates from the temperature profile, the temperature of each compartment is set in advance. A temperature control method is used to compensate by changing the intensity of each independently controlled infrared heater. However, the temperature inside the sealing furnace changes rapidly when ICs begin to flow into the furnace and when ICs finish flowing into the furnace, that is, when the number of ICs in the furnace changes. Focusing on one thing, it is also possible to set the intensity of each infrared heater in advance so as to suppress the fluctuation in temperature of each section between the time when the IC starts to flow and the end of the furnace. It is preferable that the heater emits far-infrared light that is not easily affected by the material, color, etc. of the sealed object. [Effects] (1) The sealed furnace is divided into multiple sections using partition walls, and each section is By arranging an infrared heater and a thermocouple and adjusting the intensity of the infrared heater based on the information from the thermocouple, the temperature can be controlled independently for each section, so the desired temperature profile can be achieved. The advantage is that even if the temperature within the compartment deviates from the predetermined temperature profile, it can be quickly recovered.

(2)区画壁で封止炉を複数に区画するとともに、各区
画ごとに赤外線ヒータと熱電対を配設し、かつ前記熱1
対の情報に基づいて赤外線ヒータの強度を調節せしめる
ことにより、各区画ごとに独立して温度制御を行なうこ
とができるので、炉流し始め時及び炉流し終わり時にダ
ミー治具を用いる必要がないため、作業効率及び封止の
スルーブツトを飛躍的に向上させることができるという
効果が得られる。
(2) Divide the sealed furnace into multiple sections using partition walls, and install an infrared heater and thermocouple in each section, and
By adjusting the intensity of the infrared heater based on the pair of information, the temperature can be controlled independently for each section, so there is no need to use a dummy jig at the beginning and end of the furnace flow. The effect is that the work efficiency and sealing throughput can be dramatically improved.

(3)各区画ごとに独立して温度制御を行なうことがで
きるので、ガラスの材質、パッケージサイズ、被封正体
の熱容量等に最適の温度プロファイルが設定でき、少量
多品種のICを封止する場合について効果が得られる。
(3) Since the temperature can be controlled independently for each section, the optimal temperature profile can be set depending on the glass material, package size, heat capacity of the object to be sealed, etc., making it possible to seal a wide variety of ICs in small quantities. Effects can be obtained in certain cases.

以上本発明者によってなされた発明を実施例にもとづき
具体的に説明したが、本発明は上記実施例に限定される
ものではなく、その要旨を逸脱しない範囲で種々変更可
能であることはいうまでもない。たとえば、熱電対を各
区画内に長手方向に複数配設し、て、長手方向の温度を
より正確に検出するようにしても良い、また、各赤外線
ヒータの強度を上げ下げして調節するだけでなく、赤外
線ヒータのオン・オフで区画内の温度を制御するように
しても良い。
Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the above Examples and can be modified in various ways without departing from the gist thereof. Nor. For example, multiple thermocouples may be placed longitudinally within each compartment to more accurately detect longitudinal temperature, or the intensity of each infrared heater can be adjusted by simply increasing or decreasing the intensity. Alternatively, the temperature within the compartment may be controlled by turning on and off the infrared heater.

〔利用分野〕[Application field]

以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野であるICの封止技術に適
用した場合について説明したが、それに限定されるもの
ではなく、たとえば低融点ガラスのグレージングに適用
したり、低融点ロウ材を用いたICを封止する場合、さ
らには各種ベーク炉等において温度制御が必要なものに
適用することができる。
In the above explanation, the invention made by the present inventor was mainly applied to the application field of IC sealing technology, which is the background of the invention, but it is not limited to this, for example, glazing of low melting point glass. The present invention can be applied to encapsulation of ICs using low-melting brazing materials, and can be applied to various bake ovens that require temperature control.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明の一実施例である封止装置の側部概略
断面図、 第2図は、第1図の■−n線断面図、 第3図は、温度プロファイルの説明図、第4図は、従来
の封止装置の側部概略断面図である。 11・・・封止炉、12・・・区画壁、13・・・赤外
線ヒータ、14・・・温度制御部、15・・・制@信号
、16・・・熱電対、17・・・情報、18・・・IC
,19・・・コンベヤ、20・・・炉入口、21・・・
炉出口、22・・・開口部、23・・・支持部材。 第   1  図 第  2E 第  3  図 第   4  図
FIG. 1 is a side schematic sectional view of a sealing device which is an embodiment of the present invention, FIG. 2 is a sectional view taken along the line ■-n in FIG. 1, and FIG. 3 is an explanatory diagram of a temperature profile. FIG. 4 is a schematic side sectional view of a conventional sealing device. DESCRIPTION OF SYMBOLS 11... Sealed furnace, 12... Compartment wall, 13... Infrared heater, 14... Temperature control section, 15... Control@signal, 16... Thermocouple, 17... Information , 18...IC
, 19... Conveyor, 20... Furnace inlet, 21...
Furnace outlet, 22... opening, 23... support member. Figure 1 Figure 2E Figure 3 Figure 4

Claims (1)

【特許請求の範囲】 1、ガラスを封止材とする半導体装置を封止するための
封止炉と、複数の半導体装置を載置でき前記封止炉内を
移動せしめるコンベヤとを有する封止装置において、前
記封止炉は複数に区画されるとともに、前記区画ごとに
赤外線ヒータが配設され、かつ区画単位で半導体装置へ
の加熱温度を制御する制御手段を有していることを特徴
とする封止装置。 2、前記制御手段は、各区画ごとに配設した熱電対と、
前記熱電対からの情報に基づき、各赤外線ヒータの強度
を調整する強度調整手段からなることを特徴とする特許
請求の範囲第1項記載の封止装置。
[Claims] 1. A sealing device having a sealing furnace for sealing a semiconductor device using glass as a sealing material, and a conveyor on which a plurality of semiconductor devices can be placed and moved within the sealing furnace. In the apparatus, the sealing furnace is divided into a plurality of sections, an infrared heater is provided in each section, and a control means is provided for controlling the heating temperature of the semiconductor device in each section. Sealing device. 2. The control means includes a thermocouple arranged in each section;
2. The sealing device according to claim 1, further comprising an intensity adjusting means for adjusting the intensity of each infrared heater based on information from the thermocouple.
JP16023585A 1985-07-22 1985-07-22 Sealing device Pending JPS6221245A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16023585A JPS6221245A (en) 1985-07-22 1985-07-22 Sealing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16023585A JPS6221245A (en) 1985-07-22 1985-07-22 Sealing device

Publications (1)

Publication Number Publication Date
JPS6221245A true JPS6221245A (en) 1987-01-29

Family

ID=15710622

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16023585A Pending JPS6221245A (en) 1985-07-22 1985-07-22 Sealing device

Country Status (1)

Country Link
JP (1) JPS6221245A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007227689A (en) * 2006-02-24 2007-09-06 Daishinku Corp Hermetic seal apparatus for electronic component

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007227689A (en) * 2006-02-24 2007-09-06 Daishinku Corp Hermetic seal apparatus for electronic component

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