JPS62204265A - Amorphous silicon photosensitive body - Google Patents
Amorphous silicon photosensitive bodyInfo
- Publication number
- JPS62204265A JPS62204265A JP61046728A JP4672886A JPS62204265A JP S62204265 A JPS62204265 A JP S62204265A JP 61046728 A JP61046728 A JP 61046728A JP 4672886 A JP4672886 A JP 4672886A JP S62204265 A JPS62204265 A JP S62204265A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- photosensitive body
- photoreceptor
- maximum height
- surface roughness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 17
- 230000003746 surface roughness Effects 0.000 claims abstract description 17
- 108091008695 photoreceptors Proteins 0.000 claims description 29
- 230000007547 defect Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 14
- 239000010408 film Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 241000519995 Stachys sylvatica Species 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910004077 HF-HNO3 Inorganic materials 0.000 description 1
- 101100436270 Mus musculus Astn1 gene Proteins 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
イ、産業上の利用分野
この発明は複写機、プリンター等に用いる電子写真用感
光体、特に光導電性のアモルファスシリコン(以下a
Siという)感光体に関するものである。Detailed Description of the Invention A. Field of Industrial Application This invention relates to electrophotographic photoreceptors used in copying machines, printers, etc., particularly photoconductive amorphous silicon (hereinafter referred to as a).
This relates to a photoreceptor (referred to as Si).
口、従来技術
電子写真用感光体は平板、円筒形の金属に薄いフィルム
状にして貼り付けるか或いは鏡面仕」二げした支持体の
表面に蒸着等の方法で感光体被膜を形成せしめて使用す
るもので、静電気を表面罠帯電し、その表面に被写体の
画像を写し、感光体の光導電性を利用して画像と同じ静
電気の像を造り、それにトナーを付着させて得られる静
電気の像と同じ像を紙に転写、印刷するのに使用するも
のである。Prior Art Electrophotographic photoreceptors are used by attaching a thin film to a flat or cylindrical metal plate, or by forming a photoreceptor coating on the surface of a mirror-finished support by vapor deposition or other methods. A static electricity image is obtained by trapping static electricity on the surface, transferring an image of the subject onto the surface, creating an image with the same static electricity as the image using the photoconductivity of the photoreceptor, and attaching toner to it. It is used to transfer and print the same image on paper.
従来から電子写真用感光体としては8e、5e−Te。Conventionally, 8e and 5e-Te have been used as electrophotographic photoreceptors.
5e−AsのSe系の合金、 ZnO,Cd 8の化
合物。5e-As Se-based alloy, ZnO, Cd 8 compound.
或いはPVK、フタロシアニン等の有機感光体が使用さ
れている。ところが従来の前記感光体は環境汚染性、熱
的安定性1機械的強度等の点で問題がある。Alternatively, organic photoreceptors such as PVK and phthalocyanine are used. However, the conventional photoreceptors have problems in terms of environmental pollution, thermal stability, mechanical strength, etc.
」1記の問題点を解消するのにアモルファスシリコン(
以下a−8iという)を使用する感光体が提案され、活
発に研究開発が行われており、特にシランガスをグロー
放電分解して製造したa S+は可視〜赤外域までの
広い分光感度を有し、感光体として極めて優れているこ
とが発見されている。Amorphous silicon (
A photoreceptor using a-8i (hereinafter referred to as a-8i) has been proposed, and active research and development is underway. , has been discovered to be extremely excellent as a photoreceptor.
ハ1発明が解決しようとする問題点
しかしながら実際にa−8iを複写機やプリンターに組
み込んで長期にわたって使用すると、画像のボケや白抜
けというよう々現象が生ずる欠点があり事実上は使用で
き々かった。C1 Problems to be Solved by the Invention However, when the A-8i is actually incorporated into a copying machine or printer and used for a long period of time, it has the drawback of causing phenomena such as blurred images and white spots, making it practically unusable. won.
これはa 8+膜を長時間にわたって大気中特に高湿
度下で放置すると表面の電気抵抗の減少、光導電的特性
の不安定さが生ずるためであるが、その原因は成膜時に
発生する微細な欠陥(ダングリングボンド)が層内部で
は比較的補償されているが、膜の表面では欠陥(ダング
リングボンド)が露出してしまい、その部分では雰囲気
中のイオンや分子の吸着が容易に起こるので表面方向の
電気抵抗が変化してしまうためであると考えられる。This is because if the a8+ film is left in the atmosphere for a long time, especially under high humidity, the electrical resistance of the surface will decrease and the photoconductive properties will become unstable. Although defects (dangling bonds) are relatively compensated for inside the layer, defects (dangling bonds) are exposed on the surface of the film, and ions and molecules in the atmosphere can easily be adsorbed in that area. This is thought to be because the electrical resistance in the surface direction changes.
二1問題点を解決するための手段
本発明は支持体の表面にアモルファスシリコンの光導電
層をもうけたアモルファスシリコン感光体において、光
導電層の表面粗度の最大高さを300′A以下になるよ
うに形成されたことを特徴とするアモルファスシリコン
感光体である。21 Means for Solving Problems The present invention provides an amorphous silicon photoreceptor having an amorphous silicon photoconductive layer on the surface of the support, in which the maximum height of the surface roughness of the photoconductive layer is set to 300'A or less. This is an amorphous silicon photoreceptor characterized by being formed as follows.
本発明者等はa−8i悪感光の光導電層の湿度等による
特性の劣化は光導電層表面の表面粗度と密接な関係があ
ることを見いだし本発明をなしたものである。The present inventors have discovered that the deterioration of the characteristics of the photoconductive layer of the a-8i photosensitive photosensitive layer due to humidity, etc. is closely related to the surface roughness of the surface of the photoconductive layer, and the present invention was made based on this finding.
一般に通常の条件で支持体表面にa−8i光導電層をグ
ロー放電で形成すると、その表面粗度は最大高さは約x
oooX程度のものが得られる。研究の結果、この程度
の表面粗度の表面は表面積が大きく、従って前記微細な
欠陥が表面に多く露出して高湿度の大気中で特性が劣化
することが分かった。ところが表面粗度の最大高さを3
00^以下とすると表面積が減少し、そのため露出され
る欠陥が少なくなり、耐湿性が非常に向上するのである
。Generally, when an A-8i photoconductive layer is formed on the surface of a support by glow discharge under normal conditions, the maximum height of the surface roughness is approximately x
Something of the order of oooX is obtained. As a result of research, it was found that a surface with this level of surface roughness has a large surface area, and therefore many of the above-mentioned fine defects are exposed on the surface and the characteristics deteriorate in a high humidity atmosphere. However, if the maximum height of surface roughness is 3
When it is less than 00^, the surface area is reduced, and therefore fewer defects are exposed, and the moisture resistance is greatly improved.
表面粗度の最大高さを300X以下とするには(a)グ
ロー放電で膜を形成する際に、基板(支持体表面)温度
1反応圧力、ガス流量、RF(高周波電流)パワー、等
を厳密に制御する。これらの成膜条件は製造装置の形状
、大きさ、また製品に要求される特性に応じ任意に決定
されるものであるが、実験の結果によれば第1表にある
ように。To make the maximum height of surface roughness 300X or less (a) When forming a film by glow discharge, adjust the substrate (support surface) temperature, reaction pressure, gas flow rate, RF (radio frequency current) power, etc. Tightly control. These film forming conditions are arbitrarily determined depending on the shape and size of the manufacturing equipment and the characteristics required for the product, but according to the results of experiments, as shown in Table 1.
基板温度を通常より高く200°C以上とするのがよく
、更にRFパワーを従来よりもやや高めに設定した方が
よい。It is better to set the substrate temperature to 200° C. or higher, which is higher than usual, and to set the RF power slightly higher than before.
(bl膜形成の後エツチングを行う。(Etching is performed after forming the BL film.
エツチングは、HF−HNO3系の液でウェットエツチ
ングすると良く、これによシ100〜200Aの表面粗
度を得ることができる。Etching is preferably wet etching using a HF-HNO3 solution, and a surface roughness of 100 to 200 A can be obtained by this method.
(c)膜形成後に機械的表面研磨を行う。(c) Mechanical surface polishing is performed after film formation.
研磨材、研磨液、研磨条件を適当に選別すると所望の表
面粗度が得られ、最善の条件では10〜20Xの粗度を
有する鏡面を得ることができる。By appropriately selecting the abrasive material, polishing liquid, and polishing conditions, a desired surface roughness can be obtained, and under the best conditions, a mirror surface with a roughness of 10 to 20X can be obtained.
本発明においては表面粗度の最大高さは通常はaooi
以下を必要とする。しかし更に高解像度を得てl久性を
持たせるために好ましくは1001以下が望ましい。特
に50X以下とすると高解像度に加えてトナーの除去を
容易にして感光体の耐刷性を非常に向上することができ
る。In the present invention, the maximum height of surface roughness is usually aooi
Requires: However, in order to obtain even higher resolution and durability, it is preferable that the number is 1001 or less. Particularly, when it is 50X or less, in addition to high resolution, toner removal becomes easy and printing durability of the photoreceptor can be greatly improved.
以上ではa−Si単体の感光体に付いて説明したが感光
体としてa Siの表面にSi化合物その他の薄い保
護被膜を被膜した構成においても同じ効果が得られ、そ
の構成1組成は任意に選択できるものであシ、更にa−
8iKGeを添加しa−8iGeとして長波長感度を持
たせてもよい。Although the above description has been made with respect to a photoreceptor made of a-Si alone, the same effect can be obtained with a structure in which the surface of a-Si is coated with a thin protective film such as a Si compound, and the composition of the structure 1 can be selected arbitrarily. As long as it is possible, a-
8iKGe may be added to form a-8iGe to provide long wavelength sensitivity.
ホ、実施例
支持体としてステンレス(S、US)を用い1表面を鏡
面仕上げしてグロー放電法によシ表面に第1図のように
、支持体にNi電極層、a−8iNの障壁層、a−si
光導電層+aStNの表面層をもうけた全厚さ3μmの
層のa Si光導電層(電子写真用感光体)を造り、
本発明のよう・に表面処理をした感光体試料を造った。E. Using stainless steel (S, US) as an example support, one surface was polished to a mirror finish and a glow discharge method was applied to the surface.As shown in Figure 1, the support had a Ni electrode layer and an a-8iN barrier layer. , a-si
A Si photoconductive layer (electrophotographic photoreceptor) with a total thickness of 3 μm including a photoconductive layer + aStN surface layer was made.
A photoreceptor sample was prepared with surface treatment according to the present invention.
そして表面処理をせず従来の成膜条件で造った同じ断面
の感光体試料と前記感光体試料とを複写機に装着し、該
複写機を35℃、85%湿度の恒温槽に一昼夜放置して
複写試験を行い、初期画像と放置後の画像を比較した。Then, a photoreceptor sample with the same cross section made under conventional film forming conditions without surface treatment and the photoreceptor sample were mounted on a copying machine, and the copying machine was left in a constant temperature bath at 35°C and 85% humidity overnight. A copying test was conducted and the initial image and the image after being left unused were compared.
その結果は第1表のようであった。The results were as shown in Table 1.
Cフ2 表中○、◎、×は次ぎの結果を示す。C F2 In the table, ○, ◎, and × indicate the following results.
○:放置後10万回複写(耐刷)した後も初期画像と同
様な白抜は無く、解像力の良好な画像を得た場合
◎:放装後20万回複写(耐刷)した後も初期画像と同
様な白抜は無く、解像力の極めて良好な画像を得た場合
×:初期画像は良好であるが、放置後は白抜は有り、解
像力の乏しい画像をえた場合
以」−の結果から従来品の試料1に比し本発明品のよう
にa−8i悪感光の表面粗度の最大高さを300X以下
とすると感光体の解像度が向上すると共に耐刷性が非常
に向上することが分かる。○: Even after copying 100,000 times (printing durability) after being left unused, there are no white spots similar to the initial image, and an image with good resolution is obtained. ◎: Even after copying 200,000 times (printing durability) after storage When an image with very good resolution is obtained without any white areas similar to the initial image. ×: The initial image is good, but after being left alone, there are white areas and an image with poor resolution is obtained. Compared to the conventional sample 1, if the maximum height of the surface roughness of the a-8i photoreceptor is set to 300X or less as in the product of the present invention, the resolution of the photoreceptor is improved and the printing durability is greatly improved. I understand.
なお支持体として上記実施例のS TJ Sのみでなく
、他の通常使用されているものでも、また薄膜或いはド
ラムタイプの表面に感光体をもうけたものでも同様の効
果があった。It should be noted that similar effects were obtained not only with the S TJ S used in the above-mentioned example as a support but also with other commonly used supports, as well as with a thin film or drum type support having a photoreceptor on its surface.
へ0発明の効果
以上に詳しく説明したように、本発明のa−8i悪感光
は表面粗度の最大高さを300X以下になII)
るようにしたので、感光体表面の表面積が減少し水分等
の不純物の吸着が減少されるため非常に耐湿性が改善さ
れ、感光体としての寿命が大幅に延長される。さらに表
面が平滑で表面粗度が小さく精密な鏡面であるので、解
像度が向上しトナーの付着(脱着)性即ちトナーフィル
ミング及びトナーのクリーニング特性が向上し結果とし
て像の解像度が良くなり、さらに耐刷性も向上する等大
きな効果を有するものである。Effects of the Invention As explained in detail above, in the a-8i photoreceptor of the present invention, the maximum height of the surface roughness is set to 300X or less, so the surface area of the photoreceptor surface is reduced. Since adsorption of impurities such as moisture is reduced, moisture resistance is greatly improved, and the life of the photoreceptor is greatly extended. Furthermore, since the surface is smooth and has a small surface roughness and is a precise mirror surface, resolution is improved and toner adhesion (desorption) properties, that is, toner filming and toner cleaning properties are improved, resulting in better image resolution. This has great effects such as improved printing durability.
第1図は本発明の実施例の感光体層を示す断面図である
。
(1)・・・a−8i光導電層、(2)・・・支持体。
(3)−・・N i電極、 (4)−a−8iN障
壁層、(5)・・・a−8iN表面層、
代理人 弁理士 1)中 理 夫
第1図FIG. 1 is a sectional view showing a photoreceptor layer according to an embodiment of the present invention. (1)... a-8i photoconductive layer, (2)... support. (3)--Ni electrode, (4)-a-8iN barrier layer, (5)-a-8iN surface layer, Agent: Patent attorney 1) Rio Naka Figure 1
Claims (1)
うけたアモルファスシリコン感光体において、アモルフ
ァスシリコン光導電層の表面粗度の最大高さを300Å
以下になるように形成したことを特徴とするアモルファ
スシリコン感光体 2、光導電層の表面粗度の最大高さを100Å以下とし
たことを特徴とする特許請求の範囲第1項記載のアモル
ファスシリコン感光体 3、光導電層の表面粗度の最大高さを50Å以下とした
ことを特徴とする特許請求の範囲第1項記載のアモルフ
ァスシリコン感光体[Claims] 1. In an amorphous silicon photoreceptor having an amorphous silicon photoconductive layer on the surface of the support, the maximum height of the surface roughness of the amorphous silicon photoconductive layer is 300 Å.
The amorphous silicon photoreceptor 2 is characterized in that it is formed as follows, and the amorphous silicon according to claim 1 is characterized in that the maximum height of the surface roughness of the photoconductive layer is 100 Å or less. Photoreceptor 3: an amorphous silicon photoreceptor according to claim 1, characterized in that the maximum height of the surface roughness of the photoconductive layer is 50 Å or less
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61046728A JPS62204265A (en) | 1986-03-04 | 1986-03-04 | Amorphous silicon photosensitive body |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61046728A JPS62204265A (en) | 1986-03-04 | 1986-03-04 | Amorphous silicon photosensitive body |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62204265A true JPS62204265A (en) | 1987-09-08 |
Family
ID=12755395
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61046728A Pending JPS62204265A (en) | 1986-03-04 | 1986-03-04 | Amorphous silicon photosensitive body |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62204265A (en) |
-
1986
- 1986-03-04 JP JP61046728A patent/JPS62204265A/en active Pending
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