JPS62195873A - Gas filled arrestor tube - Google Patents
Gas filled arrestor tubeInfo
- Publication number
- JPS62195873A JPS62195873A JP3658486A JP3658486A JPS62195873A JP S62195873 A JPS62195873 A JP S62195873A JP 3658486 A JP3658486 A JP 3658486A JP 3658486 A JP3658486 A JP 3658486A JP S62195873 A JPS62195873 A JP S62195873A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- envelope
- filled
- silicon diode
- detonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 239000000919 ceramic Substances 0.000 claims description 7
- 239000007789 gas Substances 0.000 description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000005474 detonation Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Landscapes
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
- Resistance Heating (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、通信端末機器と外線ケーブルとの接続箇所に
施設され、外線ケーブルに誘起される誘導雷サージから
端末機器を防護するためのガス入り避雷管に関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention is directed to a gas gas installed at the connection point between communication terminal equipment and an external line cable to protect the terminal equipment from induced lightning surges induced in the external line cable. Concerning entry arresters.
本発明は、両端に対向して金属電極が配置され、内部に
ガスが封入されたセラミック製の外囲器を備えたガス入
り避雷管において、
上記金属電極に電気的に並列に接続されたシリコンダイ
オードチップを外囲器の内部に設けることにより、
人力雷サージ電圧などに対して放電開始電圧が低く応答
速度が早い小型の素子を提供するものである。The present invention provides a gas-filled detonator having a ceramic envelope in which metal electrodes are arranged facing each other at both ends and a gas is sealed inside. By providing the diode chip inside the envelope, it provides a small element with low firing voltage and fast response speed to human-powered lightning surge voltages.
従来データ端末、ディジタル電話機などの端末機器用保
安器としては、主として、通信線に誘起される誘導雷サ
ージからこれらの端末機器を防護するためにガス入り避
雷管を単体で使用していた。Conventionally, as protectors for terminal equipment such as data terminals and digital telephones, gas-filled detonators have been used alone to protect these terminal equipment from induced lightning surges induced in communication lines.
しかし、従来のガス入り避雷管では、入力雷サージに対
する放電の遅れが数μｓないし数１０μＳ程度と大きい
。特に入力雷サージの立上り電圧が、例えばＩＫＶ／μ
Ｓとか５ＫＶ／μＳと高くなると、この雷サージに対す
る放電開始電圧は直流放電開始電圧の２倍ないし３倍程
度に上昇する。However, in the conventional gas-filled detonator, the delay in discharge with respect to an input lightning surge is as long as several microseconds to several tens of microseconds. Especially if the rising voltage of input lightning surge is, for example, IKV/μ
When the voltage becomes high, such as S or 5 KV/μS, the discharge starting voltage for this lightning surge increases to about two to three times the DC discharge starting voltage.
この値は近来の半導体技術を全面的に取り入れた電子化
または集積回路化された端末機器側の耐圧能力をはるか
に越えるので、これらガス入り避雷管のみを用いて、上
記のように電子化または集積回路化された端末機器を防
護することができないという欠点がある。This value far exceeds the voltage resistance of electronic or integrated circuit terminal equipment that fully incorporates recent semiconductor technology, so using only these gas-filled detonators, It has the disadvantage that it cannot protect terminal devices that are integrated circuits.
避雷管にシリコンダイオードを並列に接続する回路もあ
るが、この場合には素子数が大きくなり、回路接続が複
雑になる。There is also a circuit that connects a silicon diode in parallel to a detonator, but in this case the number of elements increases and the circuit connection becomes complicated.
本発明は、これらの欠点を解決して放電の遅れに対する
応答速度の早いガス入り避雷管を提供することを目的と
する。SUMMARY OF THE INVENTION An object of the present invention is to solve these drawbacks and provide a gas-filled detonator that has a high response speed to discharge delays.
［問題点を解決するための手段〕
本発明のガス入り避雷管は避雷管を構成する管状のセラ
ミック製の外囲器に対向配置された金属電極間にシリコ
ンダイオードチップを電気的に並列接続となるように配
置したことを特徴とする。[Means for Solving the Problems] The gas-filled detonator of the present invention has silicon diode chips that are electrically connected in parallel between metal electrodes placed opposite to each other in a tubular ceramic envelope constituting the detonator. It is characterized by being arranged so that
すなわち本発明は、セラミック製の外囲器と、この外囲
器の内側に対向して配置された金属電極とを備え、上記
外囲器の内部にガスが封入されたガス入り避雷管におい
て、上記外囲器の内部に、上記金属電極と電気的に並列
接続となるようにシリコンダイオードチップが配置され
たことを特徴とする。That is, the present invention provides a gas-filled detonation arrester comprising a ceramic envelope and a metal electrode arranged to face each other inside the envelope, and in which a gas is sealed inside the envelope. A silicon diode chip is arranged inside the envelope so as to be electrically connected in parallel with the metal electrode.
外囲器内にシリコンダイオードチップを備えることによ
り、入力雷サージ電圧に対する動作モードは、まず応答
速度の早いシリコンダイオードが動作し、つぎにシリコ
ンダイオードに立ち上がる電圧すなわちクランプ電圧が
ガス入り避雷管の放電開始電圧に到達する。これにより
放電開始は２段動作となる。したがって出力電圧を低く
抑えることができる。また、シリコンダイオードが避雷
管と一体化されるので、小型になり回路接続が簡単にな
る。By providing a silicon diode chip in the envelope, the operating mode for input lightning surge voltage is that the silicon diode, which has a fast response time, operates first, and then the voltage that rises across the silicon diode, that is, the clamp voltage, is used to discharge the gas-filled detonator. The starting voltage is reached. This results in a two-stage operation for starting discharge. Therefore, the output voltage can be kept low. Furthermore, since the silicon diode is integrated with the lightning arrester, it becomes smaller and the circuit connection becomes easier.
次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明の第一実施例である２極形ガス入り避雷
管の縦断面図である。FIG. 1 is a longitudinal sectional view of a bipolar gas-filled detonator, which is a first embodiment of the present invention.
第１図において、外囲器７はセラミック製の管状のもの
で、図の上下方向の開口部には対向する金属電極６．６
′が配置され、符号８の部分にて銀ろう付は処理がなさ
れ、内部にはネオンまたはアルゴンなどの希ガス９が封
入されている。In FIG. 1, the envelope 7 is made of ceramic and has a tubular shape, and the vertical opening in the figure has opposing metal electrodes 6.6.
' is arranged, silver soldering is performed at the part 8, and a rare gas 9 such as neon or argon is sealed inside.
ここで本発明の特徴とするところは、第１図において、
上記の金属電極６および６′にそれぞれ電気的に並列接
続となるよう、コ字形状の導電性ばね部材１２によりシ
リコンダイオードチップ１１が上記金属電極６および６
′間に取り付けられたことにある。Here, the features of the present invention are as shown in FIG.
The silicon diode chip 11 is connected to the metal electrodes 6 and 6' by the U-shaped conductive spring member 12 so as to be electrically connected in parallel to the metal electrodes 6 and 6', respectively.
'It is because it was installed between.
すなわち第１図において、符号１１はＰＮ接合のシリコ
ンチップを介して前記シリコンチップの両側に、放熱板
をはさんで構成されたシリコンダイオードチップである
。このシリコンダイオードチップ１１は、９６％アルミ
ナから成るセラミック性の ・外囲器７の上部および
下部にそれぞれ対向して配置された二個の金属電極６お
よび６′の間に、コ字状導電性ばね部材１２を介して、
これら電極６および６′と並列接続となるように固着さ
れている。That is, in FIG. 1, reference numeral 11 is a silicon diode chip constructed by sandwiching heat sinks on both sides of the silicon chip via a PN junction silicon chip. This silicon diode chip 11 is made of ceramic made of 96% alumina and has a U-shaped conductive conductor between two metal electrodes 6 and 6', which are arranged oppositely at the upper and lower parts of an envelope 7, respectively. Via the spring member 12,
It is fixed so as to be connected in parallel with these electrodes 6 and 6'.
このような状態で、真空炉中でネオン、アルゴン等の希
ガス９を封入するとともに、銀ろう付は処理８を行うこ
とにより、外囲器７と金属電極６．６′とが封着される
。In this state, a rare gas 9 such as neon or argon is filled in a vacuum furnace, and a silver brazing process 8 is performed to seal the envelope 7 and the metal electrodes 6 and 6'. Ru.
また符号１０は反覆放電特性を改善するための金属電極
に充填されたシリカを主成分とする塗布剤である。Further, reference numeral 10 is a coating agent containing silica as a main component and filled into a metal electrode for improving repeated discharge characteristics.
第２図は本発明の第二実施例として、第１図の２極形ガ
ス入り避雷管を２個組合せ、３極形としたものの縦断面
図を示す。第２図において、符号１９ａ 、 １９ｂは
それぞれシリコンダイオードチップを示す。FIG. 2 is a longitudinal cross-sectional view of a second embodiment of the present invention in which two bipolar gas-filled detonators of FIG. 1 are combined to form a three-pole type. In FIG. 2, numerals 19a and 19b each indicate a silicon diode chip.
このシリコンダイオードチップ１９ａ 、 １９ｂは、
９６％アルミナから成るセラミック製の外囲器１５の上
部および下部にそれぞれ対向して配置された金属電極１
３ａ 、１３ｂ 、 １４ａおよび１４ｂ間に３個のＬ
字状導電性ばね部材２０を介して金属電極１３ａと１４
ａとの間および金属電極１３ｂと１４ｂとの間にそれぞ
れ並列接続となるように固着されている。封入ガス１７
は２絹の電極が対向する空間に連通している。These silicon diode chips 19a and 19b are
Metal electrodes 1 are placed facing each other at the top and bottom of a ceramic envelope 15 made of 96% alumina.
3 L between 3a, 13b, 14a and 14b
The metal electrodes 13a and 14 are connected to each other via the character-shaped conductive spring member 20.
a and between metal electrodes 13b and 14b so as to be connected in parallel. Filled gas 17
is connected to a space where two silk electrodes face each other.
この構造でも同様にシリコンダイオードチップと金属電
極は並列接続されその動作が高速化されるとともに、形
状が小型化される。In this structure, the silicon diode chip and the metal electrode are similarly connected in parallel to speed up the operation and reduce the size.
以上説明したように本発明によれば、入力雷サージ電圧
に対して、応答速度が早く、出力電圧を低く抑えること
ができる効果がある。また、シリコンダイオードが避雷
管と一体化されているので、小型であり、回路接続が簡
単になる効果がある。As explained above, according to the present invention, the response speed to the input lightning surge voltage is fast and the output voltage can be suppressed to a low level. Furthermore, since the silicon diode is integrated with the detonator, it is compact and has the effect of simplifying circuit connection.
このため電子化または集積回路化された端末機器を雷サ
ージより本発明によるガス入り避雷管のみを用いて防護
できる。Therefore, electronic or integrated circuit terminal equipment can be protected from lightning surges using only the gas-filled detonator according to the present invention.
第１図は本発明の第一実施例（２極形）の縦断面図。
第２図は本発明の第二実施例（３極形）の縦断面図。
６．６’ 、１３ａ 、 １３ｂ 、 １４ａ 、 １
４ｂ −金属電極、７．１５・・・外囲器、８．１６・
・・銀ろう付は処理、９．１７ ・・・封入ガス、１０
．１８−・・塗布剤、１１．１９ａ 、 １９ｂ・・・
シリコンダイオードチップ、１２．２ｏ・・・導電性ば
ね部材。
特許出願人 日本電気株式会社 ８、FIG. 1 is a longitudinal sectional view of a first embodiment (dipolar type) of the present invention. FIG. 2 is a longitudinal cross-sectional view of a second embodiment (tripole type) of the present invention. 6.6', 13a, 13b, 14a, 1
4b - metal electrode, 7.15... envelope, 8.16.
・・Silver brazing is processed, 9.17 ・・Enclosed gas, 10
．． 18-... Coating agent, 11.19a, 19b...
Silicon diode chip, 12.2o... conductive spring member. Patent applicant: NEC Corporation 8.
Claims (1)
おいて、 上記外囲器の内部に、上記金属電極と電気的に並列接続
となるようにシリコンダイオードチップが配置されたこ
とを特徴とするガス入り避雷管。(1) A gas-filled detonator comprising a ceramic envelope and a metal electrode placed opposite to each other inside the envelope, the gas-filled detonator having a gas sealed inside the envelope. A gas-filled detonator, characterized in that a silicon diode chip is arranged inside the enclosure so as to be electrically connected in parallel with the metal electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3658486A JPS62195873A (en) | 1986-02-21 | 1986-02-21 | Gas filled arrestor tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3658486A JPS62195873A (en) | 1986-02-21 | 1986-02-21 | Gas filled arrestor tube |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62195873A true JPS62195873A (en) | 1987-08-28 |
Family
ID=12473820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3658486A Pending JPS62195873A (en) | 1986-02-21 | 1986-02-21 | Gas filled arrestor tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62195873A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06196245A (en) * | 1992-12-22 | 1994-07-15 | Okaya Electric Ind Co Ltd | Discharge type surge absorbing element |
-
1986
- 1986-02-21 JP JP3658486A patent/JPS62195873A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06196245A (en) * | 1992-12-22 | 1994-07-15 | Okaya Electric Ind Co Ltd | Discharge type surge absorbing element |
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