JPS62195670A - Production of electrophotographic sensitive body - Google Patents
Production of electrophotographic sensitive bodyInfo
- Publication number
- JPS62195670A JPS62195670A JP3756686A JP3756686A JPS62195670A JP S62195670 A JPS62195670 A JP S62195670A JP 3756686 A JP3756686 A JP 3756686A JP 3756686 A JP3756686 A JP 3756686A JP S62195670 A JPS62195670 A JP S62195670A
- Authority
- JP
- Japan
- Prior art keywords
- base body
- glow discharge
- amorphous silicon
- substrate
- vessel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 14
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 5
- 230000005684 electric field Effects 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 21
- 108091008695 photoreceptors Proteins 0.000 claims description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 12
- 239000000428 dust Substances 0.000 abstract description 9
- 238000005530 etching Methods 0.000 abstract description 4
- 239000002994 raw material Substances 0.000 abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- 238000004140 cleaning Methods 0.000 abstract description 2
- 239000002904 solvent Substances 0.000 abstract description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 abstract 3
- 239000007789 gas Substances 0.000 description 11
- 241000519995 Stachys sylvatica Species 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- QLOAVXSYZAJECW-UHFFFAOYSA-N methane;molecular fluorine Chemical compound C.FF QLOAVXSYZAJECW-UHFFFAOYSA-N 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 229910052711 selenium Inorganic materials 0.000 description 4
- 239000011669 selenium Substances 0.000 description 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08278—Depositing methods
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、アモルファスシリコンを主体とした電子写真
感光体の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for manufacturing an electrophotographic photoreceptor mainly made of amorphous silicon.
（従来の技術）
現在実用化されている電子写真感光体は、アモルファス
セレン（ａ−３ｅ）やアモルファスセレンひ素（ａ
ＡｓｚＳｅｚ）等のセレン系材料、硫化カドミウム粉末
を樹脂中に分散したＣｄＳ系材料、および有機系材料に
大別できる。これらの内、セレン系材料およびＣｄＳ系
材料は、耐熱性、保存安定性に問題があり、また毒性を
有するため簡単に廃棄することができず、回収しなけれ
ばならないという制約がある。また、有機系材料は保存
安定性および毒性に関しては問題が少ない反面、耐久性
において他の材料より劣っている。(Prior Art) Electrophotographic photoreceptors currently in practical use include amorphous selenium (a-3e) and amorphous selenium arsenide (a
They can be broadly classified into selenium-based materials such as AszSez), CdS-based materials in which cadmium sulfide powder is dispersed in resin, and organic materials. Among these, selenium-based materials and CdS-based materials have problems in heat resistance and storage stability, and are also toxic, so they cannot be easily disposed of and have to be recovered. Furthermore, although organic materials have fewer problems with regard to storage stability and toxicity, they are inferior to other materials in terms of durability.
一方、アモルファスシリコンを主体とした電子写真感光
体（以下ａ−３ｔ感光体と略記する）は、優れた光感度
、耐久性、耐熱性、保存安定性、無公害性など電子写真
感光体として理想的な特性を兼ね備えているため、最も
重要な感光体の一つとして注目されている。ａ−３ｉ悪
感光は、最も一般的には真空槽内にモノシランガスある
いはジシランガス等の原料ガスを導入し、高周波電圧印
加によるグロー放電を行うことで、前記原料ガスを分解
し基体上にアモルファスシリコンを主体とする感光膜を
堆積させる、いわゆるプラズマＣＶＤ法により製造され
る。On the other hand, electrophotographic photoreceptors mainly made of amorphous silicon (hereinafter abbreviated as A-3T photoreceptors) are ideal as electrophotographic photoreceptors due to their excellent photosensitivity, durability, heat resistance, storage stability, and pollution-free properties. Because of its unique characteristics, it is attracting attention as one of the most important photoreceptors. The most common method of a-3i is to introduce a raw material gas such as monosilane gas or disilane gas into a vacuum chamber, and to perform glow discharge by applying a high-frequency voltage, the raw material gas is decomposed and amorphous silicon is deposited on the substrate. It is manufactured by the so-called plasma CVD method in which a photoresist film is deposited as the main component.
（発明が解決しようとする問題点）
しかしながら、このようなプラズマＣＶＤ法により作製
したａ−３ｉ悪感光には、通常、感光膜全域にわたって
直径数μｍ〜１００．ｃａｍの粒状突起様の膜欠陥が発
生し、このような膜欠陥は、感光体を電子写真プロセス
に適用した際に、白斑、白抜は等の著しい画像欠陥とな
って現れるという問題があった。このような膜欠陥の発
生する主な原因は、真空槽内に基体を設置した後真空排
気する際に、装置内のダストが舞い上がり、このダスト
が基体上に付着するためである。基体上に付着したダス
トは数μｍ程度の大きさであっても、その上に堆積した
感光膜が異常成長し、直径子〜数十μｍの粒状突起様の
欠陥となる。特に、高温雰囲気中においては、２０μｍ
程度の微小な膜欠陥であっても大きな画像欠陥をひきお
こすため、重大な問題となっていた。(Problems to be Solved by the Invention) However, the a-3i photoresist produced by such a plasma CVD method usually has a diameter of several μm to 100 μm over the entire photoresist film. Film defects in the form of granular protrusions occur on the cam, and such film defects appear as significant image defects such as white spots and white spots when the photoreceptor is applied to an electrophotographic process. . The main reason for the occurrence of such film defects is that when a substrate is placed in a vacuum chamber and then evacuated, dust within the device is kicked up and this dust adheres to the substrate. Even if the dust attached to the substrate has a size of about several micrometers, the photoresist film deposited thereon will grow abnormally, resulting in defects in the form of granular protrusions with diameters ranging from several tens of micrometers. In particular, in a high temperature atmosphere, 20 μm
This has been a serious problem because even a small film defect can cause a large image defect.
（問題点を解決するための手段）
本発明は、アモルファスシリコンを主体とした電子写真
窓光体の製造工程において、真空槽内に少なくともＣと
Ｆとを含むフン化炭素系ガスを導入し、高周波電界を印
加することにより得られるグロー放電プラズマ中に基体
表面をさらした後、該基体上にアモルファスシリコンを
主体とした感光膜を形成するものである。(Means for Solving the Problems) The present invention introduces a fluorinated carbon-based gas containing at least C and F into a vacuum chamber in the manufacturing process of an electrophotographic window illuminator mainly made of amorphous silicon, After exposing the surface of a substrate to glow discharge plasma obtained by applying a high-frequency electric field, a photoresist film mainly made of amorphous silicon is formed on the substrate.
（作用）
真空槽内に少なくともＣとＦとを含むフン化炭素系ガス
を導入し、高周波電界を印加することにより、グロー放
電プラズマ中に基体表面をさらして、該基体面に付着し
ているダスト等の付着物を除去し、基体表面を清浄化す
る。(Function) By introducing a fluorinated carbon gas containing at least C and F into a vacuum chamber and applying a high-frequency electric field, the surface of the substrate is exposed to glow discharge plasma, and the gas adheres to the surface of the substrate. Remove deposits such as dust and clean the substrate surface.
（実施例） 以下、本発明の一実施例を図面を参照して説明する。(Example) Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
第１図（ａ）、 （ｂ）は容量結合型プラズマＣＶＤ装
置を示している。FIGS. 1(a) and 1(b) show a capacitively coupled plasma CVD apparatus.
同図において、１は真空槽３内に設置された基体、２は
電極である。In the figure, 1 is a base placed in a vacuum chamber 3, and 2 is an electrode.
基体１は直径１００ｎ、長さ３４０鰭の高純度アルミニ
ウム製の円筒体で、十分な溶剤洗浄の後真空槽３内に設
置される。この状態で、真空槽３内を１０−’ｔｏｒｒ
になるまで排気した後フッ化炭素系エツチングガスであ
るＣＦ４ガスを導入し、表１の成膜条件により、基体１
と電極２との間に高周波電圧を印加してグロー放電を起
こし、基体１の表面に付着したダスト等の付着物のエツ
チングを行う。The substrate 1 is a cylindrical body made of high-purity aluminum and has a diameter of 100 nm and a length of 340 fins, and is placed in a vacuum chamber 3 after thorough solvent cleaning. In this state, the inside of the vacuum chamber 3 is set at 10-'torr.
After exhausting the air until
A high frequency voltage is applied between the substrate 1 and the electrode 2 to cause glow discharge, thereby etching deposits such as dust attached to the surface of the substrate 1.
表１
基体１の表面に付着しているダストの大部分は、シリコ
ンと水素よりなるポリマー状化合物である。Table 1 Most of the dust adhering to the surface of the substrate 1 is a polymeric compound consisting of silicon and hydrogen.
この基体１をフン化炭素系エツチングガスによるグロー
放電プラズマにさらすと、基体表面に付着した前記ポリ
マー状化合物は完全に分解され除去される。なお、フッ
化炭素系エツチングガスとしては、前記したＣＦ、の他
に、Ｃ２Ｆ６ 、Ｃ３Ｆ８ 。When this substrate 1 is exposed to glow discharge plasma using a fluorinated carbon-based etching gas, the polymeric compound adhering to the surface of the substrate is completely decomposed and removed. In addition to the above-mentioned CF, examples of the fluorocarbon etching gas include C2F6 and C3F8.
Ｃａ Ｆ ｓ等のフッ化炭素類、ＣＨＦ、３．Ｃ，Ｈ２
Ｆ４等のフッ化炭化水素類、ＣＨＣβＦ２＋ＣＣ１ｚＦ
ｚ等の塩素系フン化炭化水素類、その他一般にドライエ
ツチング用として使用されている少なくともフッ素（Ｆ
）および炭素（Ｃ）を含むガスが使用できる。ただし、
基体１としてＡβを用いる場合には、塩素系フッ化炭化
水素類を使用すると基体表面が荒れることがあるため、
塩素を含まないフン化炭素系ガスがより好適に使用され
る。Fluorocarbons such as CaFs, CHF, 3. C, H2
Fluorinated hydrocarbons such as F4, CHCβF2+CC1zF
Chlorinated fluorinated hydrocarbons such as
) and carbon (C) can be used. however,
When Aβ is used as the substrate 1, the surface of the substrate may become rough if chlorinated fluorohydrocarbons are used.
A fluorinated carbon-based gas that does not contain chlorine is more preferably used.
次に、表２の成膜条件により、原料ガス導入およびグロ
ー放電を行い、ダストが除去された清浄な基体１上にア
モルファスシリコンを主体とする膜厚３０μｍの感光膜
を堆積形成する。Next, according to the film forming conditions shown in Table 2, raw material gas is introduced and glow discharge is performed to deposit a 30 μm thick photoresist film mainly composed of amorphous silicon on the clean substrate 1 from which dust has been removed.
（以下余白）
表２
このようにして形成された電子写真感光体の感光膜の構
造を第２図に示す。同図において、４は下部層、５は第
１の中間層、６はアモルファスシリコン光導電層、７ば
第２の中間層、８は表面層である。(The following is a blank space) Table 2 The structure of the photoresist film of the electrophotographic photoreceptor thus formed is shown in FIG. In the figure, 4 is a lower layer, 5 is a first intermediate layer, 6 is an amorphous silicon photoconductive layer, 7 is a second intermediate layer, and 8 is a surface layer.
このようにして作製されたアモルファスシリコン感光体
の表面を顕微鏡観察したところ、１０μｍ以上の粒状突
起様の膜欠陥は全く見られなかった。When the surface of the amorphous silicon photoreceptor thus produced was observed under a microscope, no film defects in the form of granular protrusions of 10 μm or more were observed.
また、このアモルファスシリコン感光体を電子写真方式
の複写機に装着して使用した結果、白斑、白抜は等の画
像欠陥の無い高品位の画像が得られた。Furthermore, when this amorphous silicon photoreceptor was attached to an electrophotographic copying machine and used, high-quality images without image defects such as white spots and white spots were obtained.
（比較例）
ＣＦ ａによって基体１の表面のエツチングを行わない
以外は前記実施例と全く同様にして膜厚３０μｍのａ−
３ｉ悪感光を作製した結果、感光体表面には１０μｍ以
上の粒状突起様の膜欠陥が１−当り約２０個観察された
。この感光体を電子写真方式の複写機に装着して使用し
た結果、複写された画像の全面に無数の白斑が現れた。(Comparative Example) A film with a thickness of 30 μm was prepared in the same manner as in the previous example except that the surface of the substrate 1 was not etched with CF a.
As a result of producing a 3i photoreceptor, about 20 granular protrusion-like film defects of 10 μm or more were observed on the surface of the photoreceptor. When this photoreceptor was attached to an electrophotographic copying machine and used, numerous white spots appeared on the entire surface of the copied image.
（発明の効果）
以上説明したように、本発明によれば、膜欠陥のないア
モルファスシリコン感光体を製造することができる。(Effects of the Invention) As explained above, according to the present invention, an amorphous silicon photoreceptor without film defects can be manufactured.
第１図（ａｌ、 （ｂｌは本発明の製造方法に用いられ
る容量結合型プラズマＣＶＤ装置の概略構成を示す縦断
面図および横断面図、第２図は本発明の製造方法によっ
て作製されたアモルファスシリコン感光体の感光膜の構
造を模式的に示した図である。
１・・・基体 ２・・・電極
３・・・真空槽
第１図（ａ）FIG. 1 (al, (bl) is a vertical cross-sectional view and a cross-sectional view showing the schematic configuration of a capacitively coupled plasma CVD apparatus used in the manufacturing method of the present invention, and FIG. 1 is a diagram schematically showing the structure of a photosensitive film of a silicon photoreceptor. 1... Base 2... Electrode 3... Vacuum chamber FIG. 1(a)
Claims (1)
の製造工程において、真空槽内に少なくともＣとＦとを
含むフッ化炭素系ガスを導入し、高周波電界を印加する
ことにより得られるグロー放電プラズマ中に基体表面を
さらした後、該基体上にアモルファスシリコンを主体と
した感光膜を形成することを特徴とする電子写真感光体
の製造方法。1) In a glow discharge plasma obtained by introducing a fluorocarbon gas containing at least C and F into a vacuum chamber and applying a high frequency electric field in the manufacturing process of an electrophotographic photoreceptor mainly made of amorphous silicon. 1. A method for producing an electrophotographic photoreceptor, which comprises exposing the surface of the substrate to water, and then forming a photoresist film mainly made of amorphous silicon on the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3756686A JPS62195670A (en) | 1986-02-21 | 1986-02-21 | Production of electrophotographic sensitive body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3756686A JPS62195670A (en) | 1986-02-21 | 1986-02-21 | Production of electrophotographic sensitive body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62195670A true JPS62195670A (en) | 1987-08-28 |
Family
ID=12501073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3756686A Pending JPS62195670A (en) | 1986-02-21 | 1986-02-21 | Production of electrophotographic sensitive body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62195670A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02258979A (en) * | 1989-02-21 | 1990-10-19 | Anelva Corp | Method and device for normal-pressure cvd |
| JPH0310076A (en) * | 1989-06-05 | 1991-01-17 | Toshiba Ceramics Co Ltd | Method for forming pyrolytic boron nitride film |
-
1986
- 1986-02-21 JP JP3756686A patent/JPS62195670A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02258979A (en) * | 1989-02-21 | 1990-10-19 | Anelva Corp | Method and device for normal-pressure cvd |
| JPH0310076A (en) * | 1989-06-05 | 1991-01-17 | Toshiba Ceramics Co Ltd | Method for forming pyrolytic boron nitride film |
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