JPS62192283A - Grooving method for ceramics substrate - Google Patents
Grooving method for ceramics substrateInfo
- Publication number
- JPS62192283A JPS62192283A JP61030726A JP3072686A JPS62192283A JP S62192283 A JPS62192283 A JP S62192283A JP 61030726 A JP61030726 A JP 61030726A JP 3072686 A JP3072686 A JP 3072686A JP S62192283 A JPS62192283 A JP S62192283A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic substrate
- laser light
- processing
- work liquid
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 19
- 239000000919 ceramic Substances 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 title claims description 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 12
- 239000007788 liquid Substances 0.000 claims abstract description 11
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract 3
- 239000007864 aqueous solution Substances 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 238000003672 processing method Methods 0.000 claims description 3
- 238000003754 machining Methods 0.000 claims description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims 1
- 229960002050 hydrofluoric acid Drugs 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 230000010355 oscillation Effects 0.000 claims 1
- 239000000243 solution Substances 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract description 7
- 230000005540 biological transmission Effects 0.000 abstract description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract description 4
- 229910021529 ammonia Inorganic materials 0.000 abstract description 2
- 230000004927 fusion Effects 0.000 abstract 2
- 239000000463 material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明はセラミックス基板の溝加工方法に係り、特にレ
ーザ光照射による加工方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a method for processing grooves on a ceramic substrate, and particularly to a processing method using laser beam irradiation.
（従来の技術）
ＡＪ、０． 、 ＡＪＯ，／Ｂｅｄ、 ＢｅＯなどノセ
ラミックス基板の溝加工（スクライビング加工）はダイ
モンドダイサーによって行われているが、溝入れ工具で
ある砥石の交換の不便を解消するために非接触加工が行
えるレーザ加工に一部置き換えられている。(Prior art) AJ, 0. , AJO, /Bed, BeO, etc. Groove processing (scribing processing) on ceramic substrates is performed using a diamond dicer, but in order to eliminate the inconvenience of replacing the grindstone used as a grooving tool, laser processing can perform non-contact processing. has been partially replaced by
この溝入れのためのレーザ加工は大気中にて行われてい
るが、第３図に示すように溝部（Ｗ）に溶融凝固層（Ｍ
）が形成されたり、また亀裂が発生してしまう問題があ
った。上記の溶融凝固層はたとえば、基板が窒化アルミ
ニウム（ＡＪＮ）の場合にはＡＪとＡｆ、Ｏ８の混在し
た不定形物質からなり導電性を有している。このような
溶融凝固層の絶縁抵抗値は５Ｘ１０７Ｑ／ｍ＠度であり
、基板本来の絶縁抵抗値５ Ｘ １０”０７ｍを著しく
下回り、半導体装置として重要な高い絶縁性が得られな
かった。Laser processing for this grooving is performed in the atmosphere, but as shown in Figure 3, the molten solidified layer (M
) and cracks may occur. For example, when the substrate is aluminum nitride (AJN), the above-mentioned molten solidified layer is made of an amorphous material in which AJ, Af, and O8 are mixed and has conductivity. The insulation resistance value of such a molten solidified layer was 5×10 7 Q/m@degree, which was significantly lower than the original insulation resistance value of the substrate 5×10”0 7 m, and high insulation, which is important for a semiconductor device, could not be obtained.
（発明が解決しようとする問題点）
本発明は上記したようにレーザ照射による除去物の再凝
固がもたらす悪影響を解消する加工力（問題点を解決す
るための手段と作用）加工液中に浸漬したセラミックス
基板にＱスイッチパルスレーザ光を照射するようにした
ものである。(Problems to be Solved by the Invention) As described above, the present invention provides a processing force (means and action for solving the problem) that eliminates the adverse effects caused by the re-solidification of the material removed by laser irradiation.Immersion in a processing liquid A Q-switched pulsed laser beam is irradiated onto a ceramic substrate.
（実施例） 以下、実施例を示す図面に基いて本発明を説明する。(Example) EMBODIMENT OF THE INVENTION Hereinafter, this invention will be explained based on drawing which shows an Example.
第１図は本発明を実施するための装置の一例で。FIG. 1 shows an example of a device for carrying out the present invention.
透過窓（１）を備え、ＸＹテーブル（２）上にこの透過
窓（１）を上方にして設けられたチャンバ（３）と、こ
のチャンバ（３）内に蓄えられた加工ｇ（４）と、透過
窓（１）を通してチャンバ（３）内にレーザ光（Ｌ）を
送るレーザ発振器（５）とを主要素にして構成されてい
る。チャンバ（３）内には透過窓（１）に対間して試料
台（６）が設けられている。またこのチャンバ（３）は
加工液（４）を貯溜している液槽（７）に循環用の供給
管（８）と排出管（９）とを介して接続され、液槽（６
）内に設けられているポンプ叫によって加工液（４）が
チャンバ（３）と液槽（月間を循環するようになってい
る。上記加工液（４）は５ｗｔ％の水酸化カリウム（Ｋ
ＯＨ）水溶液が主に使われるが、これ以外に水、水酸化
ナトリウム（ＮａＯＨ） 。A chamber (3) equipped with a transmission window (1) and provided on an XY table (2) with the transmission window (1) facing upward; and processing g (4) stored in this chamber (3). , and a laser oscillator (5) that sends laser light (L) into the chamber (3) through the transmission window (1). A sample stage (6) is provided in the chamber (3) between the transmission window (1). Further, this chamber (3) is connected to a liquid tank (7) storing a machining liquid (4) via a circulation supply pipe (8) and a discharge pipe (9).
) The processing fluid (4) is circulated between the chamber (3) and the liquid tank (monthly) by a pump installed in the chamber (3).The processing fluid (4) contains 5wt% potassium hydroxide (K
(OH) aqueous solution is mainly used, but in addition to this, water and sodium hydroxide (NaOH) are also used.
濃酸（ＨＦ）、硫酸（Ｈ，Ｓ ０番）、アンモニア（Ｈ
ＮＯＢ）等の適当な濃度の水溶液が適用される。一方、
レーザ発振器（５）は］Ｎａ ： ＹＡＧ結晶からなる
ロッド圓と、このロッドを励起する励起ランプα２とを
楕円反射面を形成した集光反射１（１３）内に収め、上
記ロッド（１０）の両側にＱスイッチとして音響光学素
子（ａｃｏｕｓｔｏｐｔｉｃａｌ ｍｏｄｕｌａｔｏｒ
） （１４ａ）、 （１４ｂ）を設け、さらにそれら
の両側に全反射鏡０■、出力鏡ａ６）からなる光共振器
をロッドα１）と同軸にして設けた構成になっている。Concentrated acid (HF), sulfuric acid (H, S No. 0), ammonia (H
An aqueous solution of an appropriate concentration such as NOB) is applied. on the other hand,
The laser oscillator (5) includes a rod circle made of Na:YAG crystal and an excitation lamp α2 that excites this rod in a condensing reflection 1 (13) formed with an elliptical reflective surface, and An acousto-optical element (acoustoptical modulator) as a Q-switch is placed on both sides.
) (14a) and (14b) are provided, and an optical resonator consisting of a total reflection mirror 02 and an output mirror a6) is provided coaxially with the rod α1) on both sides thereof.
レーザ発振器（５）の出力鏡αＱから出射したレーザ光
（Ｌ）はアパーチャ（７）１反射鏡Ｑ８）、Ｙ軸走査ミ
ラー（ＩＬＸ軸走査ミラー（イ）および集光レンズｔ２
１）を介し透過窓（１）から試料台（６）へ導かれるよ
うになっている。なお、レーザ発振器（５）は音響光学
素子（１４ａ）、 （１４ｂ）のＱスイッチ作用により
２００ｎＳオーダのパルス幅と５ ＫＨｚのパルス繰り
返し数をもつＣＷレーザ光を出射するようになっている
。また。The laser beam (L) emitted from the output mirror αQ of the laser oscillator (5) passes through the aperture (7) 1 reflecting mirror Q8), the Y-axis scanning mirror (ILX-axis scanning mirror (A), and the condenser lens t2).
1) from the transmission window (1) to the sample stage (6). The laser oscillator (5) is configured to emit a CW laser beam having a pulse width of the order of 200 nS and a pulse repetition rate of 5 KHz due to the Q-switching action of the acousto-optic elements (14a) and (14b). Also.
Ｘ軸走査ミラー（２０と集光レンズ（２１）との間には
ダイクロイックミラー四が位置合せ用の顕微鏡（ハ）に
対し資料台（６■こおける加工部分の光を反射するよう
に設けられている。さらに、ＸＹテーブル（２）および
Ｙ軸走査ミラーα９とＸ軸走査ミラー（２Ｃｊとはこれ
らの走査の制御を行う制御装置（財）に接続されている
。Between the X-axis scanning mirror (20) and the condenser lens (21), a dichroic mirror (4) is installed to reflect the light from the processed part on the document table (6) to the microscope (C) for positioning. Furthermore, the XY table (2), the Y-axis scanning mirror α9, and the X-axis scanning mirror (2Cj) are connected to a control device (incorporated) that controls the scanning of these mirrors.
上記において、資料台（６）上に厚さＱ、５ｍｉ前後の
たとえば窒化アルミニウム（ＡＪＮ）製の基板０■を固
定状態に載直し、ＸＹテーブル（２）によって所定位置
に位置決めする。この位置決め後Ｙ軸走ｆ ミラーαｌ
、 Ｘ軸走査ミラー翰の二次元方向の走査制御によりレ
ーザ光（Ｌ）を半導体ウエノ（２５１上に照射して溝加
工を行う。なお、レーザ光（Ｌ）の走査はＸＹテーブル
（２）のみか、あるいはＹ軸走査ミラー（１→とＸ軸走
査ミラー（２Ｇの走査のどちらか一方で行ってもよい。In the above, the substrate 0, which is made of aluminum nitride (AJN) and has a thickness Q of approximately 5 mm, is remounted in a fixed state on the document table (6) and positioned at a predetermined position by the XY table (2). After this positioning, Y-axis travel f Mirror αl
, Laser light (L) is irradiated onto the semiconductor wafer (251) to process grooves by two-dimensional scanning control of the X-axis scanning mirror. Note that the laser light (L) scans only on the XY table (2). Alternatively, scanning may be performed using either the Y-axis scanning mirror (1→) or the X-axis scanning mirror (2G scanning).
なお、基板（ハ）の材質は他の材質からなるセラミック
スであってもよい。Note that the material of the substrate (c) may be ceramics made of other materials.
上記の加工で得られた溝加工部分に導体を形成し絶縁抵
抗値を測定した結果、７ Ｘ １０”Ω／ｍｍの値を得
、大気中でレーザ光による溝加工した場合の抵抗値５
Ｘ １０’Ω／ｒｎｍあるいは基板（イ）自体の基板と
しての実用抵抗値Ｉ Ｘ １０９Ω／ａｍを大幅に上回
ることができた。これは第２図に示すように溶融凝固層
のない溝部（Ｍ）の形成によるもので上記絶縁抵抗値の
低下の解消とともに溝加工後の分割工程にも好影響を与
えることができた。As a result of forming a conductor on the grooved part obtained by the above processing and measuring the insulation resistance value, a value of 7 x 10"Ω/mm was obtained, and the resistance value when grooved by laser light in the atmosphere was 5.
X 10'Ω/rnm, or the practical resistance value of the substrate (a) itself as a substrate, Ix 109 Ω/am, could be significantly exceeded. This is due to the formation of grooves (M) without a molten solidified layer as shown in FIG. 2, which not only eliminated the above-mentioned decrease in insulation resistance value but also had a favorable effect on the dividing process after groove processing.
第１図は本発明を実施するための好適な装置の一例を示
す構成図、第２図は本発明による溝部の断面図、第３図
は従来例で得られた溝部の断面図である。
（３）・・・チャンバ
（４）・・・加工液
（５）・・・レーザ発振器
（２５１・・・基 板
代理人 弁理士 則 近 憲 佑
同 竹 花 喜久男
第１図
第２図 第３図FIG. 1 is a block diagram showing an example of a suitable apparatus for carrying out the present invention, FIG. 2 is a cross-sectional view of a groove according to the present invention, and FIG. 3 is a cross-sectional view of a groove obtained in a conventional example. (3)...Chamber (4)...Processing fluid (5)...Laser oscillator (251...Substrate agent Patent attorney Noriyuki Chika Yudo Kikuo Takehana Figure 1 Figure 2 Figure 3 figure
Claims (4)
上記浸漬中のセラミックス基板に加工液を通してＱスイ
ッチパルスレーザ光を照射する工程と、上記照射中セラ
ミックス基板もしくはＱスイッチパルスレーザ光の少な
くとも一方を走査する工程とを備えたことを特徴とする
セラミックス基板の溝加工方法。(1) A step of immersing the ceramic substrate in the processing liquid,
A ceramic substrate characterized by comprising the steps of: irradiating the immersed ceramic substrate with a Q-switch pulsed laser beam through a processing liquid; and scanning at least one of the ceramic substrate during irradiation or the Q-switch pulsed laser beam. groove processing method.
ム水溶液、沸酸水溶液、硫酸水溶液、アンモニア水溶液
のいずれか一つから選ばれることを特徴とする特許請求
の範囲第１項記載のセラミックス基板の溝加工方法。(2) The ceramic according to claim 1, wherein the processing fluid is selected from any one of water, an aqueous potassium hydroxide solution, an aqueous sodium hydroxide solution, a fluoric acid aqueous solution, a sulfuric acid aqueous solution, and an ammonia aqueous solution. How to make grooves on a board.
ルス幅と５キロヘルツのパルス繰り返し数をもつＱスイ
ッチ発振の連続ＹＡＧレーザになることを特徴とする特
許請求の範囲第１項記載のセラミックス基板の溝加工方
法。(3) The groove of the ceramic substrate according to claim 1, wherein the Q-switched pulsed laser light is a continuous YAG laser of Q-switched oscillation having a pulse width in the 200 ns area and a pulse repetition rate of 5 kHz. Processing method.
特徴とする特許請求の範囲第１項記載のセラミックス基
板の溝加工方法。(4) The method for machining grooves in a ceramic substrate according to claim 1, wherein the semiconductor wafer is made of aluminum nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61030726A JPS62192283A (en) | 1986-02-17 | 1986-02-17 | Grooving method for ceramics substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61030726A JPS62192283A (en) | 1986-02-17 | 1986-02-17 | Grooving method for ceramics substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62192283A true JPS62192283A (en) | 1987-08-22 |
Family
ID=12311658
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61030726A Pending JPS62192283A (en) | 1986-02-17 | 1986-02-17 | Grooving method for ceramics substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62192283A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04228284A (en) * | 1990-04-06 | 1992-08-18 | Internatl Business Mach Corp <Ibm> | Method and apparatus for laser etching |
| US6262390B1 (en) * | 1998-12-14 | 2001-07-17 | International Business Machines Corporation | Repair process for aluminum nitride substrates |
| EP1341211A2 (en) * | 2002-02-18 | 2003-09-03 | Infineon Technologies AG | Process and apparatus for light inducing chemical treatment of a workpiece |
| DE102013002977B3 (en) * | 2013-02-18 | 2013-12-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Three-dimensional structuring component surfaces involves directing laser beam on component surface, wetting surface using liquid or immersing, and coupling microwaves from microwave source in liquid in which irradiation is carried out |
-
1986
- 1986-02-17 JP JP61030726A patent/JPS62192283A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04228284A (en) * | 1990-04-06 | 1992-08-18 | Internatl Business Mach Corp <Ibm> | Method and apparatus for laser etching |
| US6262390B1 (en) * | 1998-12-14 | 2001-07-17 | International Business Machines Corporation | Repair process for aluminum nitride substrates |
| EP1341211A2 (en) * | 2002-02-18 | 2003-09-03 | Infineon Technologies AG | Process and apparatus for light inducing chemical treatment of a workpiece |
| EP1341211A3 (en) * | 2002-02-18 | 2006-04-05 | Infineon Technologies AG | Process and apparatus for light inducing chemical treatment of a workpiece |
| DE102013002977B3 (en) * | 2013-02-18 | 2013-12-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Three-dimensional structuring component surfaces involves directing laser beam on component surface, wetting surface using liquid or immersing, and coupling microwaves from microwave source in liquid in which irradiation is carried out |
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