JPS62183469A - Electrophotographic light receiving member - Google Patents

Abstract

PURPOSE:To obtain an image high in resolution and quality by changing the concentration distributions of constituent elements in the layer thickness direction so as to obtain optical band gap matching in the interface between a photoconductive layer and a surface layer, and controlling the maximum concentration of H in the surface layer to 41-70atom%. CONSTITUTION:The light receiving member is composed of a substrate 101, a light receiving layer 100 formed on the substrate 101 comprising an electrostatic charge blocking layer 102, the photoconductive layer 103 made of a-Si(H,X), and the surface layer 104 of an amorphous material containing Si, C, and H as constituent elements. The concentration distributions of the constituent elements in the layer thickness direction are changed so as to obtain optical band gap matching in the interface between the surface layer 104 and the photoconductive layer 103, and the maximum concentration of H in the surface layer 105 is controlled to 41-70atom%, thus permitting images high in resolution and quality to be repeatedly obtained.

Description

[Detailed description of the invention] [Description of the field to which the invention pertains] The present invention relates to electromagnetic waves such as light (here, light in a broad sense, meaning ultraviolet rays, visible light, infrared rays, X-rays, γ-rays, etc.). The present invention relates to an electrophotographic light-receiving member that is sensitive to.

[Description of conventional technology]

In the field of image forming and forming, high sensitivity, S
It has a high N ratio [photocurrent (I p) / dark current (I d)), has absorption spectrum characteristics that match the spectrum characteristics of the irradiated electromagnetic wave, has fast photoresponsiveness, and has a desired dark resistance value. It is required to have characteristics such as having the same properties and being non-polluting to the human body during use. Particularly in the case of an electrophotographic light receiving member incorporated into an electrophotographic apparatus used in an office as a business machine, the above-mentioned non-polluting property during use is an important point.

Based on this point, amorphous silicon (hereinafter referred to as IA-3i) is a photoconductive material that has recently attracted attention.
855718 describes its application as a light-receiving member for electrophotography.

However, electrophotographic light-receiving members having a light-receiving layer composed of conventional A-3i have electrical, optical, and photoconductive properties such as dark resistance, photosensitivity, and photoresponsiveness, and use environment characteristics. Individual improvements have been made in terms of stability, stability over time, and durability, but the reality is that there is still room for further improvement in terms of improving overall properties. It is.

For example, when applied to a light-receiving member for electrophotography, when high photosensitivity and high dark resistance are to be achieved at the same time, a Korean potential remains at Nobucho 1 in YowiL. is often observed, and when this type of light-receiving member is used repeatedly for a long period of time, fatigue accumulates due to repeated use, and there are many disadvantages such as the so-called ghost phenomenon that causes afterimages. .

In addition, when forming a photoreceptive layer using A-3i material, in order to improve its electrical and photoconductive properties, hydrogen atoms, halogen atoms such as fluorine atoms and chlorine atoms, and electrically conductive type Boron atoms, phosphorus atoms, etc. are contained in the photoconductive layer as constituent atoms to control the properties of the photoconductive layer, and other atoms are included in the photoconductive layer to improve properties. In this case, problems may arise in the electrical or photoconductive properties or voltage resistance of the formed layer.

That is, for example, the lifespan of photocarriers generated in the formed photoconductive layer by light irradiation is not sufficient, or the image transferred to the transfer paper has what is commonly called "white spots". Image defects that are thought to be caused by local discharge breakdown phenomena and image defects that are commonly referred to as "white streaks" that are thought to be caused by rubbing when a blade is used for cleaning have occurred. For example, if the surface has a surface layer with a certain thickness and is substantially transparent to the light used, the reflection spectrum of the surface layer will change due to wear due to long-term rubbing. There were many cases in which unfavorable changes in sensitivity etc. occurred over time. Furthermore, when used in a humid atmosphere or immediately after being left in a humid atmosphere for a long time, so-called blurring of the image often occurs.

Therefore, while efforts are being made to improve the properties of the A-Si material itself, when designing light-receiving members, the layer structure, chemical composition of each layer, manufacturing method, etc. must be adjusted in order to solve all of the problems mentioned above. It needs to be improved.

[Purpose of the invention]

The present invention aims to solve various problems in electrophotographic light-receiving members having conventional light-receiving layers made of A-5t as described above.

That is, the main object of the present invention is to have electrical, optical, and photoconductive properties that are virtually always stable without depending on the usage environment, have excellent light fatigue resistance, and exhibit no deterioration phenomenon even after repeated use. An object of the present invention is to provide a light-receiving member for electrophotography, which has a light-receiving layer made of A-3i, which has excellent durability and moisture resistance, and has no or almost no residual potential observed.

Another object of the present invention is to provide excellent adhesion between a layer provided on a support and the support, and between each layer of laminated layers.
A- has a dense and stable structure and high layer quality.
An object of the present invention is to provide an electrophotographic light-receiving member having a light-receiving layer composed of 5i.

Still another object of the present invention is that, when applied as a light-receiving member for electrophotography, the present invention has sufficient charge retention ability during charging processing for electrostatic image formation, making ordinary electrophotographic methods extremely effective. A-St exhibits excellent electrophotographic properties that can be applied
An object of the present invention is to provide a light-receiving member for electrophotography having a light-receiving layer composed of the following.

Another object of the present invention is to easily obtain high-quality images with high density, clear halftones, and high resolution without any image defects or image blurring during long-term use. An object of the present invention is to provide a light-receiving member that accommodates a light-receiving layer made of A-3i for photography.

Still another object of the present invention is to provide an electrophotographic light-receiving member having a light-receiving layer made of A-5i and having high photosensitivity, high SN ratio characteristics, and high electrical voltage resistance. .

[Structure of the invention]

The electrophotographic light-receiving member of the present invention includes a support, and a charge injection blocking layer on the support, which is made of a polycrystalline material containing silicon atoms as a host and contains a substance that controls conductivity.
An amorphous material having silicon atoms as its base material and containing at least one of hydrogen atoms and halogen atoms as a constituent element (hereinafter referred to as rA-5i (H)).

A photoreceptor comprising a photoconductive layer that exhibits photoconductivity and a surface layer that is made of an amorphous material containing silicon atoms, carbon atoms, and hydrogen atoms as constituent elements. layer, the surface layer has at least the light guide TL.
The concentration distribution of the constituent elements in the layer thickness direction is changed in such a way that optical bandgap consistency is obtained at the interface with the layer, and the maximum concentration of hydrogen atoms in the surface layer is 41~
It is characterized by being 70 atomic %.

Further, the surface layer may contain halogen atoms,
Further, the photoconductive layer may contain at least one type of atom among carbon atoms, oxygen atoms, and nitrogen atoms in the center.

The charge injection blocking layer, which has the function of blocking charge injection from the support, contains a substance that controls conductivity as a constituent atom, either uniformly in the layer thickness direction or in a distributed state with a large distribution on the support side.

Further, the charge injection blocking layer may contain oxygen atoms and/or nitrogen atoms as constituent atoms uniformly in the layer thickness direction or in a distribution pattern such that they are distributed in large numbers on the support side. The oxygen atoms and/or nitrogen atoms in the charge injection blocking layer may reside on the support side.

Further, the photoconductive layer may contain at least one of a carbon atom, an oxygen atom, a nitrogen atom, and a substance that controls conductivity as constituent atoms. Furthermore, an adhesion layer made of an amorphous material or a polycrystalline material having silicon atoms as a host and at least one of oxygen atoms and nitrogen atoms may be provided between the charge injection blocking layer and the support.

The electrophotographic light-receiving member of the present invention designed to have the above-mentioned layer structure can solve all of the above-mentioned problems, and has extremely excellent electrical, optical, and photoconductive properties. , pressure resistance and use environment characteristics.

That is, when applied as a light-receiving member for electrophotography, there is no influence of residual potential on image formation, and the W
i. It has stable mechanical properties, high sensitivity, and high signal-to-noise ratio, has excellent light fatigue resistance and repeated use characteristics, and has high density, clear halftones, and high resolution. High quality images can be stably and repeatedly obtained.

Hereinafter, the electrophotographic light receiving member of the present invention will be described in detail with reference to the drawings.

FIGS. 1-1 and 1-2 are schematic configuration diagrams schematically shown to explain the electrophotographic light-receiving member of the present invention.

In the electrophotographic light-receiving member shown in FIGS. 1-1 and 1-2, the light-receiving layer 100 is a support 10 for the light-receiving member.
The photoreceptive layer 100 is formed of a charge injection blocking layer 102, A-3i(H,X), a photoconductive layer 103 having photoconductive layer properties, silicon atoms, and carbon atoms. It is composed of an amorphous material whose constituent elements are atoms and hydrogen atoms, and the concentration of these constituent elements is changed in such a manner that optical bandgap consistency is obtained at least at the interface with the photoconductive layer. and the maximum concentration of hydrogen atoms is 41
It has a layer structure consisting of a surface layer 104 of ~70 atomic %. Further, 106 represents an adhesive layer.

Each layer constituting the electrophotographic light-receiving member shown in FIGS. 1-1 and 1-2 will be described below.

The support used in the present invention may be electrically conductive or electrically insulating. Examples of the conductive support include NiCr, stainless steel, AM, Cr, Mo, and Au.
, Nb, Ta, V, Ti, PL, Pd, or alloys thereof.

As the electrically insulating support, films or sheets of synthetic resins such as polyester, polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, glass, ceramic, paper, etc. are usually used. .

Preferably, at least one surface of these electrically insulating supports is conductively treated, and another layer is preferably provided on the conductively treated surface side.

For example, if it is glass, NiCr, Au
, Cr, Mo, Au, Ir, Nb, Ta, V, Ti, P
t, Pd, In2O3, S n02, ITO(I n2
03+5n02), etc., or if it is a synthetic resin film such as polyester film, N+Cr, A-cross, Ag, Pb.
, Zn, Ni, Au, Cr, Mo, Ir.

A thin film of a metal such as Nb, Ta, V, Ti, Pt, etc. is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or the surface is laminated with the above metal to impart conductivity to the surface. Ru. The shape of the support may be any shape such as a cylinder, a belt, or a plate, and the shape is determined as desired. For example, in the case of continuous high-speed copying, an endless belt or a cylinder may be used. It is desirable to do so. The thickness of the support is appropriately determined so as to form a desired electrophotographic light-receiving member, but when flexibility is required as an electrophotographic light-receiving member, the thickness of the support is determined as appropriate. It is made as thin as possible within the range where its functions can be fully demonstrated. However, in such a case, the weight is usually 10 g or more in view of manufacturing and handling of the support, mechanical strength, etc.

In particular, when recording an image using coherent light such as a laser beam, the surface of the support may be provided with irregularities in order to eliminate image defects caused by so-called interference fringes that appear in visible images.

The unevenness provided on the surface of the support can be obtained by fixing a cutting tool having a 7-shaped cutting edge in a predetermined position on a cutting machine such as a milling machine or a lathe, and rotating the cylindrical support according to a program designed in advance as desired. However, by regularly moving in a predetermined direction, the surface of the support can be accurately cut to form a desired uneven shape, pitch, and depth. The inverted V-shaped linear protrusion created by the unevenness formed by such a cutting method has a spiral pattern centered on the central axis of the cylindrical support. The spiral drawing of the inverted V-shaped protrusion may be a double or triple spiral drawing, or a crossing [
lI! There is no problem even if it has a g-line structure.

Alternatively, in addition to the spiral drawing, a parallel line structure along the central axis may be introduced.

The vertical cross-sectional shape of the uneven convex portions provided on the surface of the support is determined by the controlled non-uniformity of the layer thickness within the microcolumns of each layer formed, and by the difference between the support and the layer directly provided on the support. Good between! 5 In order to ensure adhesion and desired electrical contact, it is formed into an inverted ■-shape, but preferably it is substantially shaped into an isosceles triangle, a right triangle, or a scalene triangle, as shown in FIG. It is desirable to Of these shapes, isosceles triangles and right triangles are particularly desirable.

In the present invention, the dimensions of the irregularities provided on the surface of the support in a controlled manner are set in such a way that the object of the present invention can be achieved as a result, taking into account the following points.

That is, first, the A-Sr(H,

Therefore, it is necessary to set the dimensions of the irregularities provided on the surface of the support so as not to cause deterioration in the layer quality of the A-St(H,X) layer.

Secondly, if the free surface of the photoreceptive layer is extremely uneven, it becomes impossible to perform cleaning completely after image formation.

Further, when cleaning the blade, there is a problem that the blade becomes damaged quickly.

After considering the above-mentioned problems in layer deposition, process problems in electrophotography, and conditions for preventing interference fringes, we found that:
The pitch of the recesses on the surface of the support is preferably 500 pm to
0.3 g m, more preferably 200 pots m~lpm,
The optimum range is 50gm to 57zm.

Further, the maximum depth of the recess is preferably 0.1 m to 5 m.
It is desirable that the temperature is O13ILm, more preferably O13ILm~3pm, optimally 0.6JLm~2pm. If the pitch and maximum depth of the recesses on the support surface are within the above range,
The inclination of the inclined surface of the recess (or linear protrusion) is preferably 1 degree to 20 degrees, more preferably 3 degrees to 15 degrees, and most preferably 4 degrees to 10 degrees.

Further, the maximum difference in layer thickness due to non-uniform layer pressure of each layer deposited on such a support is preferably 0.
1 pm to 2 lm, more preferably 0.1 gm"1.5
Bm, preferably 0.2 pm to IBm.

Further, as another method for eliminating image defects caused by interference fringe patterns when coherent light such as laser light is used, an uneven shape formed by a plurality of spherical trace depressions may be provided on the surface of the support.

That is, the surface of the support has irregularities smaller than the resolving power required for electrophotographic light-receiving members, and the irregularities are caused by a plurality of spherical trace depressions.

Below, the shape of the surface of the support in the electrophotographic light receiving member of the present invention and a preferred manufacturing example thereof are shown in FIGS. 15 and 1.
Although this will be explained with reference to FIG. 6, the shape of the support in the light-receiving member of the present invention and the manufacturing method thereof are not limited thereto.

FIG. 15 schematically shows a typical example of the surface shape of the support in the electrophotographic light-receiving member of the present invention, partially enlarging a part of the uneven shape.

In FIG. 15, 1501 is a support, 1502 is a surface of the support, 1503 is a rigid pearl, and 1504 is a spherical trace depression.

Furthermore, FIG. 15 also shows one example of a preferred manufacturing method for obtaining the surface shape of the support. That is, it is shown that a spherical depression 1504 can be formed by allowing the rigid pearl 1503 to fall naturally from a predetermined height from the support surface 1502 and collide with the support surface 1502. Then, by using a plurality of rigid pearls 1503 with approximately the same diameter R' and dropping them simultaneously or sequentially from the same height h, the pearls 1503 with approximately the same radius of curvature R and the same A plurality of spherical trace depressions 1504 having a width can be formed.

As described above, FIG. 16 shows a typical example of a support 1601 having an uneven shape formed by a plurality of spherical trace depressions 1604 on the surface of a rigid true sphere 1603. 1602 indicates the position of the convex portion of the support body 1601.

By the way, the radius of curvature R and the width of the uneven shape formed by the spherical trace depressions on the surface of the support of the light-receiving member for electrophotography of the present invention efficiently prevent the occurrence of interference fringes in the light-receiving member of the present invention. This is an important factor in achieving the goal. The present inventors have investigated the following points as a result of various experiments. That is, when the radius of curvature R and the width satisfy the following formula: % formula %, there are 0.5 or more Newton rings due to shearing interference in each trace depression. Furthermore, if the following formula is satisfied, one or more Newton rings due to shearing interference will exist in each trace depression.

For this reason, it is desirable to disperse the interference fringes generated throughout the light-receiving member into each trace recess, and to place the interference fringes upward in order to prevent the occurrence of interference fringes in the light-receiving member.

In addition, the width of the unevenness due to the trace depression is at most about 500 m, preferably 200 m or less, more preferably 1
It is preferable to set it to 100p or less.

FIG. 17 shows a light-receiving member in which a light-receiving layer 1700 is provided on a support 1701 having an uneven shape formed by the above method and along the slope of the unevenness. 17
02 is a charge injection blocking layer, 1703 is a photoconductive layer, 1704
is the surface layer.

In the case of the light receiving member shown in FIG.
Since the degree of inclination at the interface formed in the free surface 1705 and the photoreceptive layer 1700 is different, the reflection angle of the reflected light at the interface formed in the free surface 1705 and the photoreceptor layer 1700 is different. Therefore, shearing interference corresponding to the so-called Newton's ring phenomenon occurs, and interference fringes are dispersed within the depression. As a result, even if microscopic interference fringes appear in the visible image appearing through such a light-receiving member, they are of such a degree that they cannot be visually perceived. In other words, the use of a support having such a surface shape allows the light that has passed through the light-receiving layer to reach the layer interface and the surface of the support by a light-receiving member having a multi-layered light-receiving layer formed thereon. This effectively prevents the formed image from having a striped pattern due to reflection and interference.

The charge injection blocking layer in the ヱJ22Kakudama U = Atsudai invention is composed of polycrystalline silicon, and a substance for controlling conductivity is distributed uniformly in the entire layer region of the core layer or preferably in a large amount on the support side. It is contained in a non-uniform state.

Furthermore, if necessary, oxygen atoms and/or nitrogen atoms may be contained uniformly in the entire layer region or a part of the R@ region of the charge injection blocking layer, or preferably in a non-uniform state so that they are distributed more on the support side. This makes it possible to improve the adhesion between the charge injection blocking layer and the support and to adjust the band gap.

Examples of the conductivity controlling substance contained in the charge injection blocking layer include so-called impurities in the semiconductor field. An atom that belongs to group (2) (hereinafter referred to as "group (2) atom") or an atom that belongs to group V of the periodic table (hereinafter referred to as "group V atom") that provides N-type conductivity is used. Part ■
Specifically, as group atoms, B (boron), AJI
(aluminum), Ga (gallium), In (indium), Ti (thallium), etc., with B and Ga being particularly preferred. Specifically, as a group ■ atom,
, As (arsenic), sb (antimony), Bi
(bismuth), etc., with P and As being particularly preferred.

FIGS. 2 to 6 show the charge injection blocking layer containing
A typical example of the distribution state of group atoms or group (Ⅰ) atoms in the layer thickness direction is shown. In the examples shown in Figures 2 to 6, the horizontal axis is
The distribution concentration C of group atoms or group Ⅰ atoms is shown, the vertical axis shows the layer thickness t of the charge injection blocking layer, tB is the interface position on the support side,
tT indicates the position of the interface on the side opposite to the support side. That is, the charge injection blocking layer is formed from the tB side toward the tT side.

FIG. 2 shows a first typical example of the distribution state of group (I) or group V atoms contained in the charge injection blocking layer in the layer thickness direction.

In the example shown in FIG. 2, from the interface position tB to the position tl, the content concentration C of group (III) atoms or group (III) atoms is 01.
The distribution concentration C gradually and continuously decreases from the position C2 from the position t1 to the interface position t7. At the interface position tT, the distribution concentration C is C3.

In the example shown in FIG. 3, the distribution concentration C of the contained Group II atoms or Group V atoms gradually and continuously decreases from C4 from position tB to position tT, and then reaches position tT. A distribution state such as C5 is formed.

In the example shown in FIG. 4, the distribution concentration C of group (IV) atoms or group V atoms is C between position tB and position t2.
It is a constant value of 6, and is set to C7 at position tT.

Between the position t2 and the position t7, the one-distribution concentration C is linearly decreased from the position t2 to the position tT.

In the example shown in FIG. 5, the distribution concentration C takes a constant value of C8 from position @ to 3, and decreases linearly from position t3 to position t7 from C9 to CIO. It is considered to be a state of distribution.

In the example shown in FIG. 6, the distribution concentration C takes a constant value of C11 from position it to position tT.

In the present invention, when the charge injection blocking layer contains group (IV) atoms or group V atoms in a distribution state in which they are distributed in large numbers on the support side, the maximum distribution concentration value of group m atoms or group V atoms The value is preferably 50 atomic ppm or more, more preferably 80
It is desirable that the layer be formed in such a manner that it can be distributed in a concentration of atomic ppm or more, most preferably 100 atomic ppm or more.

In the present invention, the content of Group M atoms or Group V atoms contained in the charge injection blocking layer is 1, which may be determined as desired so as to effectively achieve the object of the present invention. Preferably from 30 to 5 x 104 atomic ppm, more preferably from 50 to 1 x 104 atomic ppm, optimally from 1 x 102 to
Preferably, the amount is 5×10 3 atomic ppm.

As described above, the charge injection blocking layer mainly improves the adhesion between the support 101 and the charge injection layer (1F for charge injection) by containing oxygen atoms and/or nitrogen atoms.
For improving adhesion between a layer and a photoconductive layer or for charge injection 1
The bandgap of the F layer is adjusted to M8.

7 to 13 show typical examples of the distribution state of oxygen atoms and/or nitrogen atoms contained in the charge injection 1F layer in the layer thickness direction. In the examples shown in FIGS. 7 to 13, the horizontal axis shows the distribution concentration C of oxygen atoms and/or nitrogen atoms, the vertical axis shows the layer thickness of the first layer for charge injection, and tB is the interface on the support side. tT indicates the position of the interface on the opposite side to the support side. That is, the charge injection layer 1 is formed from the tB side toward the tT side.

FIG. 7 shows a first typical example of the distribution state of oxygen atoms and/or nitrogen atoms contained in the charge injection blocking layer in the layer thickness direction.

In the example shown in FIG. 7, from the interface position to the position t, the content concentration C of oxygen atoms and/or nitrogen atoms is C1.
While taking a constant value of 2, the distribution concentration C gradually and continuously decreases from position t4 to interface position t7 from C13. At the interface position t7, the distribution concentration C
is assumed to be C14.

In the example shown in FIG. 8, the distribution concentration C of the contained oxygen atoms and/or nitrogen atoms varies from the position tT
gradually and continuously decreases from C15 until reaching position t7.
The distribution state is such that C16 is formed at .

In the case of FIG. 9, the distribution concentration C of oxygen atoms and/or nitrogen atoms is constant at C17 from position 1 to position t5, and gradually becomes continuous between position t5 and position t7. is substantially reduced to zero at position tT.

In the case of FIG. 10, the distribution concentration C of oxygen atoms and/or nitrogen atoms is gradually decreased continuously from C19 from position tB to position t7, and becomes substantially zero at position t7. ing.

In the example shown in FIG. 11, the distribution concentration C of oxygen atoms and/or nitrogen atoms is C22 from position tB to position t7.
takes a constant value, and from position t7 to position tT, the distribution state decreases in a linear function from C23 to C24.

In the example shown in FIG. 11, the distribution 1 degree C of oxygen atoms and/or nitrogen atoms is a constant value of C20 between the position tB and the position ts, and at the position tT. C21
It is said that Between position 6 and position tT, the distribution concentration C
is decreased linearly from position t6 to position tT.

In the example shown in FIG. 12, the 1-distribution concentration C takes a constant value of C25 from position 1 to position tT.

In the present invention, the charge injection blocking layer 102 is made of oxygen atoms or/
and nitrogen atoms are contained in a distributed state in a large amount on the support 101 side, the distribution concentration value of oxygen atoms and/or nitrogen atoms or the maximum value of the sum of both pages is preferably 50
It is desirable that the layer be formed in such a manner that a distribution state of 0 atomic ppm or more, more preferably 800 atomic ppm or more, and optimally 1000 atomic ppm or more can be obtained.

In the present invention, the content of oxygen atoms and/or nitrogen atoms contained in the charge injection blocking layer, or the sum of both, may be appropriately determined as desired so as to effectively achieve the object of the present invention. However, it is preferably o, o o i to 50 atomic %, more preferably 0.002 to 40 atomic %, most preferably 0.003 to 30 atomic %.

In the present invention, the thickness of the charge injection blocking layer is preferably 0.01 to 10 square, more preferably 0.05 to 8 square, from the viewpoint of obtaining desired electrophotographic properties and economical effects. The optimum range is preferably 0.1 to 5.

In the electrophotographic light receiving member of the present invention, the support 10
1 and the charge injection blocking layer, for example, Si3N4, 5i02. SiO2,S
iC, SiO.

An adhesion layer made of an amorphous material or the like containing at least one of hydrogen atoms and halogen atoms, at least one of air atoms, oxygen atoms, and carbon atoms, and silicon atoms may be provided.

i bean ej The photoconductive layer in the present invention is A-5i (H.

X) and has photoconductive properties that satisfy desired electrophotographic properties.

Incidentally, the entire layer region of the photoconductive layer may contain a substance for controlling conductivity within a range that does not impair the properties required of the photoconductive layer.

Further, carbon atoms are added to the entire layer region of the photoconductive layer within a range that does not impair the properties required for the photoconductive layer.

It may contain at least one of an oxygen atom and a nitrogen atom.

As the substance for controlling the conductivity, Group I atoms or Group V atoms can be used, as in the charge injection blocking layer described above.

In the case where the photoconductive layer in the present invention contains group m atoms or group Ⅰ atoms in the entire layer region, it is mainly effective to control the conductivity type and/or conductivity, and the group Ⅰ atoms or group The content of group atoms is relatively small, preferably I
0-3 to 3 x 102 atomic ppm, more preferably 5 x 10
-3 to 102 atomic ppm, most preferably 1 x 10-2 to 5° atomic ppm.

In addition, in the case where oxygen atoms or carbon atoms are contained in the entire layer region of the photoconductive layer in the present invention, the main effects are increased dark resistance, improved adhesion between the charge injection blocking layer and the photoconductive layer, etc. However, in order not to deteriorate the photoconductive properties of the layer, it is desirable that the content of oxygen atoms be relatively small.

In the case of nitrogen atoms, in addition to the above-mentioned points, the photosensitivity can be improved in coexistence with, for example, group (I) atoms, particularly B. The content of oxygen atoms or nitrogen atoms contained in the photoconductive layer, or the sum of both, is preferably 1X10-3 to 1
03 atomic ppm, more preferably 5X10-2 to 5X10
It is desirable that the content be 2 atomic ppm, most preferably 1X10-1 to 2X102 atomic ppm.

In order to effectively achieve the object of the present invention, the photoconductive layer formed on the support and forming a part of the photoreceptive layer has the semiconductor characteristics shown below, and has the following semiconductor characteristics. It is composed of A-Si(H,X) which exhibits photoconductivity against

■ p-type A-S i (H, X) --- Contains only 7 receptors. Or one that contains both donor and acceptor and has a high relative concentration of acceptor.

■ p-type A -S i (H, X)---■
Types with low acceptor concentration (Na) or low acceptor relative concentration.

(2) n-type A-S i (H,X) - Contains only one-donor. Or one that contains both donor and acceptor and has a high relative concentration of donor.

・■ n-type A -S i (H, X)---■
type in which the concentration of donor (Nd) is low or the relative concentration of acceptor is low.

■ Type i A-S i (H, X) ------N a
-Nbgo0 or NazNd.

In the present invention, a preferable halogen atom (X) contained in the charge injection blocking layer and/or photoconductive layer is F.
, 0 sentences, Br, I, and F, C4Q, is particularly desirable.

In the present invention, a charge injection blocking layer made of polycrystalline silicon or/and A-3i (H) is used.

The photoconductive layer composed of X) is formed by, for example, a vacuum deposition method that utilizes a discharge phenomenon such as a glow discharge method, a microwave discharge method, a sputtering method, or an ion blating method. For example, in order to form an amorphous layer composed of polycrystalline silicon or/and A-5i (H, Along with the raw material gas for hydrogen atoms (H) and/or halogen atoms (X
) The raw material sludge for introduction is introduced into a deposition chamber whose interior can be reduced in pressure to generate a glow discharge in the deposition chamber, and placed on the surface of a predetermined support made of polycrystalline silicon that has been placed in a predetermined position in advance. layer and A-Si(H.

What is necessary is to form a layer consisting of X). In addition, in the case of forming by the snow ivy method, for example, Ar.

When sputtering a target composed of Si in an inert gas such as He or a mixed gas atmosphere based on these gases, a gas for introducing hydrogen atoms (H) or / and /\ \ \ \ rogen atoms (X) is used. may be introduced into the deposition chamber for sputtering.

The raw material gas for Si supply used in the present invention includes SiH4, Si2H6, 5i3HB, Si4H10
Silicon hydride (silanes) in a gaseous state or which can be gasified such as
a, 5i2Hs are preferred.

Effective raw material gases for introducing the /X halogen atoms used in the present invention include many /\rogen compounds. Preferred examples include gaseous or gasifiable halogen compounds such as silane derivatives.

Further, silicon compounds containing halogen atoms, which are in a gaseous state or can be gasified and whose constituent elements are silicon atoms and halogen atoms, can also be cited as effective in the present invention.

Specifically, halogen compounds that can be suitably used in the present invention include halogen gases such as fluorine, chlorine, bromine, and iodine, ErF, and Cf1F.

ClF3. BrF5. BrF3. IF3.

IF7. Examples include interhalogen compounds such as ICi and IBr.

As silicon compounds containing halogen atoms, so-called silane derivatives substituted with halogen atoms, specifically, for example, S
iF4. Si2F6. Preferred examples include silicon halides such as Si0M4,5iBra.

When forming the characteristic photoconductive member of the present invention by a glow discharge method using such a silicon compound containing a halogen atom, silicon hydride gas is not used as a raw material gas capable of supplying Si. Both are polycrystalline silicon or A-3i containing halogen atoms as constituent elements on a predetermined support.
:A layer consisting of H can be formed.

When manufacturing a layer containing halogen atoms according to the glow discharge method, basically silicon halide gas, which is a raw material gas for supplying Si, and gases such as Ar, H2゜He, etc. are mixed at a predetermined mixing ratio and gas flow rate. A desired layer can be formed on a predetermined support by introducing the gas into a deposition chamber and generating a glow discharge to form a plasma atmosphere of these gases. However, in order to introduce hydrogen atoms, a layer may be formed by further mixing a predetermined amount of a silicon compound gas containing hydrogen atoms with these gases.

Moreover, each gas may be used not only as a single species but also as a mixture of multiple species at a predetermined mixing ratio.

To form a layer of polycrystalline silicon or A-5t (H, Sputtering is carried out in a predetermined gas plasma atmosphere, and in the case of the ion blating method, polycrystalline silicon or single crystal silicon is housed in the evaporation port as an evaporation source, and this silicon evaporation source is used by resistance heating method or electron beam method CEB.
This can be carried out by heating and evaporating the flying evaporated material using a method such as the above method, and passing the flying evaporated material through a predetermined gas plasma atmosphere.

At this time, in order to introduce halogen atoms into the layer formed by either the sputtering method or the ion blasting method, a gas of the above-mentioned halogen compound or a silicon compound containing the above-mentioned halogen atoms is introduced into the deposition chamber. It is sufficient to introduce the gas to form a plasma atmosphere of the gas.

Further, when introducing hydrogen atoms, a raw material gas for introducing hydrogen atoms, such as H2 or the above-mentioned silane gases, is introduced into the deposition chamber for sputtering to form a plasma atmosphere of the gas. Good.

In the present invention, the above-mentioned halogen compounds or halogen-containing silicon compounds are effectively used as the raw material gas for introducing halogen atoms, but HF is also used.

Hydrogen halides such as He, HBr, and HI.

SiH2F2.5iH2I2, 5iH2C cross 2゜5iH
(,13,5iH2Br2, 5iHBr3 and other halogen-substituted silicon hydrides, gaseous or gasifiable halides containing hydrogen atoms as one of their constituents are also effective for forming charge injection blocking layers and photoconductive layers. It can be mentioned as a starting material.

These λ rogenides (containing hydrogen atoms) are used to introduce hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties, at the same time as introducing rogen atoms into the layer formed during layer formation. Therefore, in the present invention, it is used as a suitable raw material for introducing halogen atoms.

To structurally introduce hydrogen atoms into the formed layer,
In addition to the above, H2 or SiH4゜Si2H6,5i
This can also be achieved by causing a discharge by causing a silicon hydride gas such as 3HB or 5i4HtO to coexist with a silicon compound for supplying Si in the deposition chamber.

For example, in the case of the reactive sputtering method, a Si target is used, and a plasma atmosphere is created by introducing a gas for introducing halogen atoms and H2 gas, including inert gases such as He and Ar as necessary, into the deposition chamber. By forming and sputtering the Si target, a layer of polycrystalline silicon or A-3i(H,X) is formed on the substrate.

Furthermore, it is also possible to introduce a gas such as B2H6 to also serve as impurity doping.

In the present invention, hydrogen atoms (H
), the amount of halogen atoms (X), or the sum of the amounts of hydrogen atoms and halogen atoms is preferably 1 to 40 atom %, more preferably 5 to 30 atom %.

In order to control the amount of hydrogen atoms (H) and/or halogen atoms (X) contained in the formed layer, for example, the support temperature or/and the amount of hydrogen atoms (H) or halogen atoms (
The amount of the starting material used to contain X) introduced into the deposition system, the discharge power, etc. may be controlled.

In order to make the charge injection blocking layer or the photoconductive layer contain Group Ⅰ atoms or Group V atoms, as well as carbon atoms, oxygen atoms, or nitrogen atoms, the charge injection blocking layer or photoconductive layer can be formed by a glow discharge method, a reactive sputtering method, etc. When forming a conductive layer, a starting material for introducing a group M atom or a group V atom, and a starting material for introducing an oxygen atom, a nitrogen atom, and a carbon atom are used as charge injection inhibitors [F This is accomplished by incorporating the compound in a controlled amount into the layer to be formed, in conjunction with the starting material for forming the layer or photoconductive layer.

Such starting materials for introducing carbon atoms, for introducing oxygen atoms, and/or for introducing nitrogen atoms, or for group I atoms or group V atoms.
As a starting material for introducing group atoms, a gaseous substance or a gasified substance whose constituent atoms are at least one of carbon atoms, oxygen atoms, and nitrogen atoms, or group Ⅰ atoms or mV group atoms is used. Most of them can be used.

For example, if you want to include oxygen atoms, silicon atoms (
A raw material gas whose constituent atoms are S i) and an oxygen atom (0)
A raw material gas consisting of constituent atoms and hydrogen atoms (
H) or and a raw material gas containing a halogen atom (X) at a desired mixing ratio, or
Either a raw material gas containing silicon atoms (Si) and a raw material gas containing oxygen atoms (○) and hydrogen atoms (H) are mixed at a desired mixing ratio, or silicon A source gas containing atoms (Si) as constituent atoms;
Silicon atom (Si), oxygen atom (0) and hydrogen atom (
H) can be used in combination with a raw material gas having three constituent atoms.

Alternatively, a raw material gas containing silicon atoms (Si) and hydrogen atoms (H) as constituent atoms may be mixed with a raw material gas containing oxygen atoms (0) as constituent atoms. Introduction of oxygen atoms Specifically, starting materials for nitrogen atom introduction and nitrogen atom introduction include, for example, oxygen (02), ozone (
03), -nitrogen oxide (No), nitrogen dioxide (NO2),
-nitrogen dioxide (N20), nitrogen sesquioxide (N203),
Nitrogen tetroxide (N204), nitrogen sesquioxide (N205)
, nitrogen trioxide (NO3), nitrogen (N2).

Ammonia (NM3), hydrogen azide (HN3).

Hydrazine (NH2NH2), whose constituent atoms are a silicon atom (Sl), an oxygen atom (0), and a hydrogen atom (H),
Examples include lower siloxanes such as disiloxane (H3SiO3iH3) and trisiloxane (H3SiO3iH20S i B3).

Examples of carbon atom-containing compounds that serve as raw materials for introducing carbon atoms include saturated hydrocarbons having 1 to 4 carbon atoms, and saturated hydrocarbons having 2 to 4 carbon atoms.
Examples include ethylene hydrocarbons, acetylene hydrocarbons having 2 to 3 carbon atoms, and the like.

Specifically, as a saturated hydrocarbon, methane (CH4)
, ethane (C2)(s), propane (C3He),
n-Butane (n-C4H10).

Pentane (C5HL2), ethylene hydrocarbon, ethylene (C2Ha), propylene (C3H6), butene-1 (C4H8), butene-2 (C4H8), inbutylene (C4H8), pentene (C5H10), acetylene carbonization As hydrogen, acetylene (C2H2).

Examples include methylacetylene (C3H4) and butyne (C4Hs).

As a raw material gas containing Si, C, and H as constituent atoms, S
Examples include alkyl silicides such as i (CH3)4 and St (C2H4)4.

When a glow discharge method is used to form a charge injection blocking layer and a photoconductive layer containing group (IV) atoms or group V atoms, the starting materials that serve as the raw material gas for forming the layer may be Charge injection blocking layer made of crystalline silicon and A-3
t(H.

A group (I) atom or a starting material for introducing a group (II) atom is added to the starting material suitably selected from the starting materials for forming a photoconductive layer consisting of X). The starting material for the introduction of such group (III) atoms or group (III) atoms may be a gaseous substance or a gasified substance whose constituent atoms are group (IV) atoms or group (V) atoms. , any one may be used.

In the present invention, starting materials that can be effectively used for introducing group (I) atoms include B2H6, B4HIO, B5H9, and B5H11, specifically for introducing boron atoms.
, B6H10, B6H12, B6H14, etc., BF3. BC sentence 3. Examples include boron halides such as BBr3, but also AlCl2. GaC1
3, I ncl 3 , TuCu3, etc. can also be mentioned.

In the present invention, the starting materials that are effectively used for introducing Group V atoms are, specifically, those for introducing phosphorus atoms:
Hydrogen ratios such as PH3, P2H4, PH4I, PF3
, PFs, PCC84PCl5. PBr3. PBr3
．． PI3 etc. 17) Halogen and other items may be mentioned. In addition,
AsH3゜AsF3, AsCn3, AsBr3,
AsF5.

SbH3, SbF3, SbF5. Sb0 sentence 3゜5bC
JLs, BiH3, B1Cu3. B1Br3 etc. can also be mentioned.

The content of Group ■ atoms or Group V atoms introduced into the charge injection blocking layer and photoconductive layer containing Group ■ atoms or Group V atoms is the same as the content of Group ■ atoms or Group V atoms introduced into the deposition chamber. It can be arbitrarily controlled by controlling the gas flow rate of the starting material for group V atom introduction, gas flow rate ratio, discharge power, support temperature, pressure in the deposition chamber, etc.

The support temperature for effectively achieving the purpose of the present invention is appropriately selected from an optimum range, but when forming a photoconductive layer made of A-Si(H, ℃
, preferably 100°C to 300°C. Further, when forming a charge injection blocking layer made of polycrystalline silicon, the temperature is usually 200°C to 700°C, preferably 250°C to 600°C.

In the formation of the charge injection blocking layer and the photoconductive layer in the present invention, glow discharge is used because delicate control of the composition ratio of atoms constituting the layer and control of the layer thickness are easier than with other methods. However, when forming a charge injection blocking layer and a photoconductive layer using these layer forming methods, the discharge power during layer formation, the same as the support temperature described above, Gas pressure is an important factor that influences crystallization, amorphization, and other properties of the charge injection blocking layer and photoconductive layer to be created.

In order to efficiently and productively produce a charge injection blocking layer and a photoconductive layer having characteristics that can achieve the object of the present invention, it is necessary to set the charge injection blocking layer made of polycrystalline silicon as the discharge power condition. When forming, usually 100 to 50
00W, preferably 200 to 2000W, and when forming a photoconductive layer made of A-5i(H,X)1 usually 10 to 100OW, preferably 20 to 500W.
It is desirable to do so. Regarding the gas pressure in the deposition chamber, when forming a charge injection blocking layer made of polycrystalline silicon,
10-3 to 0.8 Torr, preferably 5XlO-3 to 0
It is desirable to set it to about 15 Torr.

In the present invention, the above-mentioned ranges are mentioned as desirable numerical ranges for the support temperature and discharge power for creating the charge injection blocking layer and the photoconductive layer, but these layer creation factors are usually independent. In order to form a charge injection blocking layer and a photoconductive layer having desired characteristics, it is preferable to determine the optimum value of each layer forming factor based on mutual and organic relationships. .

In the present invention, the amount of carbon, oxygen, or nitrogen contained in the photoconductive layer to be formed greatly influences the characteristics of the electrophotographic light-receiving member to be formed, and can be adjusted as desired. It must be determined appropriately, but preferably 0.000
5 to 30 at%, more preferably 0.001 to 20 at%
, the optimum content is preferably 2 to 15 atomic % of O, OO.

The layer thickness of the photoconductive layer is determined as desired so that photocarriers generated by irradiation with light having desired spectral characteristics are efficiently transported, and is usually 1 to 10 mm thick.
It is desirable that the thickness be 0p, preferably 2 to 50μ.

1 Plate 1 The surface layer formed on the photoconductive layer has a free surface and achieves the objectives of the present invention mainly in terms of moisture resistance, continuous repeated use characteristics, electrical pressure resistance, use environment characteristics, and durability. established for the purpose of

In the light-receiving member of the present invention, the optical band gaps of both layers match at the interface between the surface layer and the photoconductive layer, or the amount of incident light at the interface between the surface layer and the photoconductive layer matches. It is extremely important to have a configuration that matches at least to the extent that reflection can be substantially prevented, and at the same time, this also creates very unique favorable conditions in relation to the hydrogen content. Also, this is an important point. Furthermore, in the present invention, a region near the surface of the surface layer 104,
It is necessary to set the hydrogen content to a predetermined concentration at least on the outermost surface. In order to satisfy the above conditions, the distribution state of the constituent elements within the surface layer needs to be determined after strict condition control.

Furthermore, in addition to the above-mentioned conditions, at the end of the surface layer on the free surface side, a sufficient amount of incident light can be ensured to reach the photoconductive layer provided under one surface layer. Therefore, it is also important to consider that the end of the first surface layer on the free surface side is constructed so that the optical band gap Eopt of the surface layer is sufficiently large. At the interface between the first surface layer and the photoconductive layer, the optical band gap Eopt
When the optical band gap Eopt of one surface layer is made sufficiently large at the free surface side end of one surface layer, the optical band gap of the surface layer is equal to that of the surface layer. The layer is configured to include at least a region that changes continuously in the layer thickness direction.

In order to control the value of the optical bandgap Eopt of the surface layer in the layer thickness direction as described above, it is necessary to control the surface layer of carbon atoms (C), which are typically the main adjusting atoms of the optical bandgap. This can be done by controlling the fleas contained in the hydrogen, and also by controlling the flea content in the hydrogen, which has the function of matching other properties of the surface layer to optimal conditions in response to changes in the band gap. Control content.

Hereinafter, some typical examples of the distribution state of carbon atoms and hydrogen atoms in the surface layer will be explained with reference to FIGS. 19 to 22, but the present invention is not limited to these examples.

In Figures 19 to 22, the horizontal axis represents atoms (C, Si).
and the distribution concentration C1 of atoms (H), the vertical axis is the layer thickness t of the surface layer.
In the figure, t4 is the interface position between the photosensitive layer and the surface layer, tF is the free surface position, and the solid line is the distribution of atoms (C) 75
The broken line shows the change in the distribution concentration of silicon atoms (Si), and the dashed line shows the change in the distribution concentration of hydrogen atoms (H).

FIG. 19 shows a first typical example of the distribution state of atoms (C), silicon atoms (Si), and hydrogen atoms (H) contained in the surface layer in the layer thickness direction. On the chain side, from the interface position tT to the position t7, the distribution concentration C of atoms (C) increases linearly from zero until the concentration C26, and on the other hand,
The distribution concentration of silicon atoms is from concentration C27 to concentration C28.
The distribution concentration of hydrogen atoms increases linearly from C29 to C30, and from position t7 to position tF, atoms (C), silicon atoms, and hydrogen atoms The distribution concentration C of is each concentration C25
For convenience of explanation, the inflection point of the distribution state of each component is defined as t.
T, but there is virtually no problem even if they deviate from each other.

In the example shown in FIG. 20, from position tT to position 1)-,
Carbon atoms (C) range from zero to concentration C31, silicon atoms (Si) range from C32 to c33, and hydrogen atoms (
H) is changed numerically from C34 to C35. In this example, since the components change over the entire surface layer, it is possible to further improve the adverse effects caused by discontinuity of the components.

For example, it is also possible to combine patterns in which the rate of change of the components changes moment by moment as shown in FIGS. 21 and 22, and typical examples shown in FIGS. 19 to 22, depending on the desired rotor characteristics or manufacturing equipment. It can be selected as appropriate depending on the conditions and the like. Furthermore, as mentioned above, the consistency of the bandgap at the interface only needs to be a substantially sufficient value. From this point of view, it is also acceptable for the changes in the components to stagnate over a certain period in the distribution region.

The surface layer is formed by a glow discharge method, a microwave discharge method, a sputtering method, an ion implantation method, an ion blating method, an electron beam method, or the like. These manufacturing methods are selected and adopted as appropriate depending on factors such as manufacturing conditions, the level of equipment capital investment, manufacturing scale, and the desired characteristics of the electrophotographic light-receiving member to be manufactured. It is relatively easy to control the production conditions for producing an electrophotographic light-receiving member having the following properties. The glow discharge method or the sputtering method is preferably employed because of the advantages of easy introduction of carbon atoms and hydrogen atoms together with silicon atoms into the surface layer to be formed.

Furthermore, in the present invention, a glow discharge method and a sputtering method may be used together in the same apparatus system to form the surface layer.

To form the surface layer by the glow discharge method, A-(S
iXCt-x)y:Hty The raw material gas for forming y is mixed with a dilution gas at a predetermined mixing ratio as necessary, and introduced into a deposition chamber for vacuum deposition where a support is installed. The resulting gas may be turned into gas plasma by causing a glow discharge, and A (SixCt-x)y:Hl-y may be deposited on the photoconductive layer 103 already formed on the support 101. The formation of the distribution area is caused by the changing components,
For example, this can be easily done by increasing or decreasing the amount of carbon atom-containing scum, silicon atom-containing gas, hydrogen atoms, etc., respectively, from the starting flow rate according to a specific sequence set so as to obtain a desired distribution pattern.

In the present invention, A −(S ixC1-X) y :H1
-'Si is used as a raw material gas for forming Y.

Most of the dregs-like substances containing at least one of C and H as a constituent atom or gasified substances that can be gasified can be used.

When using a raw material gas containing Si as one of Si, C, and H, for example, a raw material gas containing St as a constituent atom, a raw material gas containing C as a constituent atom, and a raw material gas containing H as a constituent atom. Alternatively, a source gas containing St as a constituent atom and a source gas containing C and H as constituent atoms may be mixed at a desired mixing ratio. Alternatively, raw material scraps containing Si as a constituent atom and raw material scraps containing Si, C, and H as constituent atoms can be mixed and used.

Separately, C is added to the raw material gas containing Si and H as constituent atoms.
A mixture of raw material gases having constituent atoms may be used.

Further, in the distribution region, the mixing ratio may be changed according to a predetermined sequence.

In the present invention, S containing Si and H as constituent atoms is effectively used as the raw material gas for forming the surface layer 104.
iH4, Si2H6゜S i 3H3, S 14HH)
Silicon hydride gas such as Silane, C
and H as constituent atoms, for example, saturated hydrocarbons having 1 to 4 carbon atoms, ethylene hydrocarbons having 2 to 4 carbon atoms, and 2 carbon atoms.
-3 acetylenic hydrocarbons and the like.

Specifically, as a saturated hydrocarbon, methane (CH)
, ethane (c2H et al.), propane (cqHR), n-
Pig 7 (n-CaHlo).

Pentane (C5H12), ethylene hydrocarbons include ethylene (C2H4), 7'lopylene (C3H6),
Butene-1 (C4HEl), Butene-2 (C4H8),
Inbutylene (C4HB).

Pentene (CsHlo), acetylene hydrocarbon X includes acetylene (C2H2), methylacetylene (C3
Ha), butyne (C4H,e), and the like.

As a raw material gas containing St, C, and H as constituent atoms, S
Examples include alkyl silicides such as i (CH3)a and Si (C2H5)a. In addition to these raw gases,
Of course, H2 is also effectively used as the raw material gas for introducing H.

To form the surface layer by the sputtering method, a single crystal or polycrystalline Si wafer, a C wafer, or an S
This can be carried out by using a wafer containing a mixture of i and C as a target and sputtering them in various gas atmospheres.

For example, if a Si wafer is used as a target, the raw material gases for introducing C and H are diluted with diluent gas as necessary and introduced into the deposition chamber for sputtering. The Si wafer may be sputtered by forming gas plasma. The distribution region in this case may be determined by, for example, changing the concentration of the raw material gas containing C according to a certain sequence.

Alternatively, sputtering may be performed in a gas atmosphere containing at least hydrogen atoms, using separate targets for Si and C, or a single target containing a mixture of Si and C. In this case, the distribution region requires the use of gas containing at least one of C or Si, and the concentrations of these gases must be changed according to a certain sequence.

As the raw material gas for introducing C or H, the raw material gas shown in the glow discharge example described above can be used as an effective gas also in the case of sputtering.

In the present invention, so-called rare gases such as He, Ne, Ar, etc. can be cited as suitable dilution residues used when forming the surface layer 104 by a glow discharge method or a sputtering method. .

The surface layer 104 in the present invention is carefully formed to provide the required properties as desired.

In other words, substances whose constituent atoms are Si, C, and H can have structural forms ranging from crystalline to amorphous depending on the conditions of their creation, and their electrical properties range from conductive to semiconductive to insulating. In the present invention, since each exhibits properties ranging from photoconductive properties to non-photoconductive properties,
In order to form A-5txC1-X having the desired characteristics according to the purpose, the conditions for production are strictly selected according to the desired purpose.

For example, in order to provide the surface layer 104 with the main purpose of improving pressure resistance, A - (S ixc 1-X)y:Hl-
Y is made as an amorphous material with pronounced electrically insulating behavior in the environment of use.

In addition, when a surface layer is provided with the main purpose of improving the characteristics of continuous repeated use or the characteristics of the usage environment, the above-mentioned degree of electrical insulation is relaxed to some extent, and a non-woven material with a certain degree of sensitivity to the irradiated light is provided. A-3iXC as a crystalline material
t-x is created.

A-(SixCL-x)yHl on the surface of the photoconductive layer
- When forming a surface layer consisting of Y, the temperature of the support during layer formation is an important factor that influences the structure and properties of the formed layer. It is desirable that the temperature of the support during layer formation be strictly controlled so that A-(SiXC1-x)yHt-y having the following properties can be formed as desired.

In order to effectively achieve the purpose of the present invention, the optimal range of the support temperature when forming the surface layer is selected as appropriate in accordance with the method of forming the surface layer, and the formation of the surface layer is carried out. However, in normal cases, the temperature is 50" to 350°C, preferably 10
It is desirable that the temperature be 0°C to 300°C. Glow discharge and sputtering methods are used to form the surface layer, as it is relatively easy to finely control the composition ratio of the atoms that make up the layer and control the layer thickness compared to other methods. However, when forming the surface layer by these layer forming methods, the discharge power and gas pressure during layer formation are adjusted in the same way as the support temperature described above. -x
) y: One of the important factors that influences the characteristics of Hl-'/
It is one.

A- having the characteristics for achieving the object of the present invention
(SiXC1-x)y: The discharge power conditions for effectively creating Ht-y with good productivity are usually 10 to 1
000W, preferably 20 to 500W. The gas pressure inside the deposition chamber is usually 0.01 to 1 Torr.
, preferably about 0.1 to 0.5 Torr.

In the present invention, the support temperature for creating the surface layer,
The values in the above-mentioned range are listed as the desirable numerical range of the discharge power, but these layer creation factors cannot be determined independently and separately, and the A-Si with desired characteristics
It is desirable that the optimum value of each layer forming factor be determined based on mutual organic relationship so that a surface layer consisting of xC1-X is formed.

The amounts of carbon atoms and hydrogen atoms contained in the surface layer of the electrophotographic light-receiving member of the present invention are the same as the production conditions of the surface layer, so that the surface layer can obtain the desired characteristics to achieve the uninvented object. is an important factor in the formation of

The amount of carbon atoms contained in the surface layer in the present invention is usually 0 to 90 at%, preferably 0 to 85 at%, based on the total amount of silicon atoms and carbon atoms in the distribution region. It is desirable to change the range of O to 80 at%, and in a certain region, usually lXl0-3 to 90 at%, preferably 1 to 90 at%, optimally 10 to 80 at%.
It is preferable to express it in atomic percent. The content of hydrogen atoms is desirably constant or varied within the range of 1 to 70 atomic % with respect to the ffi amount of the constituent atoms in the distribution region, and in a certain region or at least on the outermost surface. is usually 41 to 70 atom%, preferably 45
It is desirable that the content be 60 atomic %.

A light-receiving member having a surface layer prepared under the above-mentioned amount range, the above-mentioned distribution state, and the above-mentioned manufacturing conditions can be sufficiently applied as a material that is far superior to anything previously available in practice. be. The effect will be explained below using a few examples.

First, to explain the aspect of band gap consistency, for example, when there is a clear optical interface between the surface layer and the light guide 1ff layer as in the conventional case, the reflection of the incident light at the interface However, due to interference between this and reflection on the free surface, a phenomenon is observed in which the amount of light incident on the photoconductive layer is influenced to some extent. This tendency is particularly noticeable when coherent light such as laser light is used as a light source. On the other hand, for example, in the case of a copying machine that uses the blade clicon method, it is inevitable that the surface layer will wear out more or less due to long-term use, but changes in the film thickness of the surface layer that cause this wear will lead to the above-mentioned interference state. effect. In other words, there is a phenomenon in which the amount of light incident on the photoconductive layer is influenced to some extent by wear. Controlling bandgap consistency in the present invention has one aspect of minimizing reflection at the interface from the viewpoint of component continuity, and another aspect of controlling the bandgap consistency. This produces a two-fold favorable effect of giving continuity to the light absorption property itself. Therefore, it can be said that a noteworthy effect in this case is that, among the above-mentioned preferable electrophotographic properties, it exhibits an outstanding effect in maintaining the properties during long-term use.

Next, we will discuss the role of hydrogen in the surface layer.

Defects existing in the surface layer (mainly dangling bonds of silicon atoms and carbon atoms) are known to have an adverse effect on the properties of light-receiving materials for electrophotography, such as charging properties due to charge injection from the free surface. deterioration of the photoconductive layer, fluctuations in charging characteristics due to changes in the surface structure due to the use environment, such as high humidity, and charge injection into the surface layer from the photoconductive layer during corona charging or light irradiation. Examples include an afterimage phenomenon during repeated use due to charges being trapped in defects.

However, by controlling the hydrogen content in the surface layer to 41 atomic percent or more, the defects in the surface layer are greatly reduced, and as a result, all of the above problems are solved, especially when compared to the conventional one. In comparison, dramatic improvements can be made in terms of electrical characteristics and high-speed continuous usability.

On the other hand, if the hydrogen content in the surface layer exceeds 71 atomic percent, the hardness of the surface layer decreases and it cannot withstand repeated use. Therefore, the hydrogen content in the surface layer is controlled within the above range. This is one of the very important factors in obtaining significantly superior desired electrophotographic properties. The hydrogen content in the surface layer depends on the flow rate of H2 gas and the temperature of the support.

It can be controlled by discharge power, gas pressure, etc.

Furthermore, there is a unique correlation between the consistency of the bandgap and the hydrogen content state, especially in the distribution region of carbon atoms (C), which is a typical change component of the bandgap. The content is set so as to optimize the structure in that region or to minimize dangling bonds, and the content is set so as to optimize the structure in that region, and to satisfy the effect described in the role of hydrogen in the surface layer. In other words, it is set in the most reasonable form so that the amount of hydrogen tends to increase at least toward the free surface side.

Therefore, in the present invention, the hydrogen content state of the surface layer is determined by matching the effect of the consistency of the /hend gap and the effect of the hydrogen content itself so that they are both maximized. It can be said that it also has two effects.

The surface layer may contain halogen atoms. As a method for containing halogen atoms in the surface layer, for example, SiF4,5iFH3,5t2F6,5iF3S is added to the raw material gas.
Mix halogenated silicon gas such as iH3, Si04, etc. or/and CF4. CC intersection 4. It may be formed by a glow discharge decomposition method or a sputtering method by mixing a halogenated carbon gas such as CH3CF3.

The numerical range of the layer thickness in the present invention is one of the important factors for effectively achieving the object of the present invention.

The numerical range of the layer thickness of the surface layer in the present invention is appropriately determined as desired depending on the intended purpose so as to effectively achieve the purpose of the present invention.

In addition, the thickness of the surface layer is appropriately determined as desired in relation to the thickness of the photoconductive layer, with consideration given to the characteristics required for each layer region. There is a need. In addition, it is desirable to take into consideration economic efficiency, which takes into account productivity and mass production.

The thickness of the surface layer in the present invention is usually 0.003
~30#, preferably 0.004-2og, optimally 0.
It is desirable that the range is between 0.005 and 10 hiro.

The layer thickness of the light-receiving layer of the electrophotographic light-receiving member in the present invention is suitably determined as desired in accordance with the purpose.

In the present invention, the layer thickness of the photoreceptive layer is such that the characteristics imparted to the photoconductive layer and the surface layer constituting the photoreceptor layer are effectively utilized to effectively achieve the object of the present invention. The layer thickness relationship between the photoconductive layer and the surface layer is determined as desired so that the thickness of the photoconductive layer is preferably several hundred to several thousand times the thickness of the surface layer. It is preferable to do so.

A specific value is usually 3 to 100. , preferably 5~
70 tiles, preferably in the range of 5 to 50 tiles.

Next, the outline of the method for manufacturing a photoconductive member of the present invention will be explained.

FIG. 18 shows an example of an apparatus for manufacturing a light-receiving member for electrophotography.

In the gas cylinders 1102 to 1106 in the figure, raw material gas for forming each layer of the present invention is sealed.
As an example, 1102 is 5iH4 (purity 9
9.999%) cylinder, 1103 is B diluted with B2
2H6 gas (purity 99.999%, hereinafter referred to as B 2 H6/
It is abbreviated as He. ), 1104 is B2 gas (purity 99.9
9999%) cylinder, 1105 is No gas (purity 99.
999%) cylinder, t106 is CH4 gas (purity 99%)
．． 99%) cylinder.

In order to flow these gases into the reaction chamber 1101, valves 1122 to 1126 of gas pumps 1102 to 1106.
Make sure the leak valve 1135 is closed,
In addition, inflow valves 1112 to 1116 and outflow valve 111
After confirming that 7 to 1121 and auxiliary valves 1132 and 1133 are open, first open the main valve 1134 to exhaust the reaction chamber 1101 and gas piping. Next, when the vacuum gauge 1136 reads approximately 5X10-Gtorr, the auxiliary valves 1132, 1133 and the outflow valve 1117
~Close 1121.

Next, to give an example of forming an electrophotographic light-receiving member having the layer structure shown in FIG.
Open the valves 1122 to 1125 to supply H6/B2 gas and No gas from the gas pump 1105, respectively, and check the outlet pressure gauge 1.
The pressures at 127 to 1130 are adjusted to 1 Kg/cm', respectively, and the inflow valves 1112 to 1115 are gradually opened to allow the inflow into the mass flow controllers 1107 to 1110, respectively. Subsequently, the outflow valves 1117 to 1120 and the auxiliary U valve 1132 are gradually opened to supply each gas to the reaction chamber 1.
101. At this time, the SiH4 gas flow rate and B
Adjust the outflow valves 1117 to 1120 so that the ratio of the 2H6/B2 gas flow rate and the No gas flow rate becomes the desired value,
In addition, the vacuum gauge 11 is adjusted so that the pressure inside the reaction chamber reaches the desired value.
Adjust the opening of the main valve 1134 while checking the reading of 36. After confirming that the temperature of the base cylinder 1137 is set to a temperature in the range of 5,0 to 350°C by the heating heater 1138, the power source 1140 is set to the desired power and the glow inside the reaction chamber 1101 is set. At the same time, the flow rate of B2H6/H2 gas or/and No gas is controlled by the valve 11 manually or by an externally driven motor, etc. according to a pre-designed rate of change curve.
18 and/or 1120 is performed to control the distribution concentration in the layer thickness direction of boron atoms and/or oxygen atoms contained in the formed layer.

As described above, when the charge injection blocking layer containing boron atoms and oxygen atoms is formed to a desired thickness, the outflow valves 1120 and 1118 are closed, and the B inflow into the reaction chamber 1101 is completed.
By blocking the inflow of 2H6/He gas and No gas and simultaneously adjusting the outflow valves 1117 and 1119 to control the flow rates of 5tH4 gas and H2 gas and subsequently forming a layer, light containing no oxygen atoms and boron atoms is produced. A conductive layer is formed on the charge injection blocking layer to a desired thickness.

In addition, when forming a photoconductive layer containing oxygen atoms and/or boron atoms, the outflow valve 1118 or/and 112
Instead of closing 0, the flow rate can be adjusted to the desired flow rate.

When halogen atoms are contained in the charge injection blocking layer and the photoconductive layer, SiF4 gas, for example, is further added to the above gas and fed into the reaction chamber 1101.

Depending on the choice of gas species when forming each layer.

The layer formation speed can be further increased. For example, SiH4
If layer formation is performed using Si2H6 gas instead of gas, the productivity can be increased several times, improving productivity.

Light guide 'F' created as above! ! To form a surface layer on the layer, e.g. SiH4 gas is applied by the same valve operation as during the formation of the photoconductive layer.

This is accomplished by flowing CH4 gas and, if necessary, diluting gas such as H2 into the reaction chamber 1101 at a desired flow rate ratio to generate glow discharge according to desired conditions.

The amount of carbon atoms contained in the surface layer is, for example, SiH4
It can be controlled as desired by arbitrarily changing the flow rate ratio of gas and CH4 gas introduced into the reaction chamber 1101 as desired.

Further, the amount of hydrogen atoms contained in the surface layer is, for example, H2
It can be controlled as desired by arbitrarily changing the flow rate of gas introduced into the reaction chamber 1101 as desired.

Needless to say, all outflow valves other than those for gases required when forming each layer are closed, and when forming each layer, the gas used to form the previous layer is inside the reaction chamber 1101 and the outflow valve 1117 is closed. In order to avoid remaining in the piping leading from ~1121 into the reaction chamber 1101, the outflow valves 1117~1121 are closed, the auxiliary valve 1132 is opened, and the main valve 1134 is fully closed, and the system is once evacuated to high vacuum. Perform operations as necessary.

Further, during layer formation, the base cylinder 1137 is constantly rotated at a desired speed by a motor 1139 in order to ensure uniform layer formation.

<Example 1> Using the manufacturing apparatus shown in FIG. 18, an electrophotographic light-receiving member was formed on a mirror-finished aluminum cylinder according to the manufacturing conditions shown in Table 1. Also, using the same type of device as in Figure 18,
A separate sample was prepared in which only a charge injection blocking layer was formed on a cylinder with the same specifications. The light-receiving member (hereinafter referred to as a drum) is set in an electrophotographic device and checked for electrophotographic characteristics such as initial chargeability, residual potential, and ghost under various conditions. We investigated the decrease in charging ability, deterioration in sensitivity, and increase in image defects after testing with a real machine. Furthermore, image deletion on the drum was also evaluated in a high temperature φ high humidity atmosphere of 35° C. 185%. Then, from the drum for which evaluation was completed, parts corresponding to the upper, middle, and lower parts of one image area were cut out and subjected to quantitative analysis of hydrogen contained in the surface layer using SIMS.

In addition, for samples with only a charge injection blocking layer, after cutting out in the same manner, the sample was cut out using an X-ray diffraction device at a diffraction angle of 5t (around 27°).
A diffraction pattern corresponding to 111) was obtained, and the presence or absence of crystallinity was investigated. The above evaluation results, the maximum hydrogen content in the surface layer, and the presence or absence of crystallinity of the charge injection blocking layer are summarized in Table 2. As shown in Table 2, remarkable superiority was observed in many areas, including initial charging ability, image deletion, residual potential, ghost, increase in image defects, unevenness in photosensitivity in the generatrix direction, and deterioration in sensitivity.

Comparative Example 1> A drum and a sample for analysis were prepared using the same equipment and method as in Example 1, except that the production conditions were changed as shown in Table 3.
It was subjected to similar evaluation and analysis. The results are shown in Table 4.

As shown in Table 4, it was found that the sample was inferior to Example 1 in various items.

<Example 2> Using the manufacturing apparatus shown in FIG. 18, an electrophotographic light-receiving member was formed on a mirror-finished aluminum cylinder according to the manufacturing conditions shown in Table 5. Also, using the same type of device as in Figure 18,
A separate sample was prepared in which only a charge injection blocking layer was formed on a cylinder with the same specifications. The light-receiving member (hereinafter referred to as a drum) was set in an electrophotographic device and checked for electrophotographic characteristics such as initial chargeability, residual potential, and ghost under various conditions. We investigated the decrease in charging ability, deterioration in sensitivity, and increase in image defects after printing on a 10,000-sheet machine.

Furthermore, image blurring on the drum was also evaluated at a high temperature of 35° C. 285% in a high temperature atmosphere. After the evaluation has been completed, the drum is cut out from the top, middle, and bottom of the image area as a sample, and is subjected to quantitative analysis of hydrogen contained in the surface layer using SIMS. Silicon atom (Si), carbon atom (C), hydrogen atom (
The component profile of H) in the layer thickness direction was investigated. Furthermore, boron (B) in the layer thickness direction in the charge injection blocking layer,
The component profile of oxygen (0) was investigated. In addition, for samples with only a charge injection blocking layer, after cutting out in the same manner,
A diffraction pattern corresponding to 5t(111) at a diffraction angle of around 27° was determined using a line diffraction device, and the presence or absence of crystallinity was examined. The above evaluation results and the maximum value of hydrogen content in the surface layer, and
Table 6 summarizes the presence or absence of crystallinity of the charge injection blocking layer. Furthermore, the component profile of the element in the surface layer is shown in FIG. 1, and the component profile of the element in the charge injection blocking layer is shown in FIG.

As seen in Table 6, in particular, the initial chargeability, residual potential,
ghosting, image deletion, and image defects; increase in image defects;
Furthermore, remarkable superiority was recognized in various items such as light sensitivity unevenness in the generatrix direction and sensitivity deterioration.

<Example 3 (Comparative Example 2)> The production conditions of the surface layer were changed to several conditions shown in Table 7, and a plurality of drums were formed under the same conditions as in Example 1, and the same evaluation was performed. Served.

Then, the drums for which evaluation had been completed were cut out as samples in the same manner as in Example 1, and subjected to similar analysis, and the results of 0 or more are shown in Table 8.

<Example 4> The conditions for producing the photoconductive layer were changed to several conditions shown in Table 9,
A plurality of drums were prepared under the same conditions as in Example 1 except for the above. These drums were subjected to the same evaluation as in Example 1, and the results shown in Table 10 were obtained.

<Example 5> Only the plurality of drums and the charge injection blocking layer were formed under the same conditions as in Example 1, except that the conditions for producing the charge injection blocking layer were changed to several conditions shown in Table 11. I prepared a sample. These drums and samples for analysis were prepared in Example 1.
As a result of evaluation and analysis similar to that shown in Table 12, results were obtained as shown in Table 12: <Example 6> The preparation conditions of the charge injection blocking layer were changed to several conditions shown in Table 13, and the other conditions were A sample was prepared in which only a plurality of drums and a charge injection blocking layer were formed under the same conditions as in Example 1. These drums and samples for analysis were prepared in Example 1.
As a result of the same evaluation as above, the results shown in Table 14 were obtained.

<Example 7> An adhesive layer was formed on the base cylinder under several manufacturing conditions shown in Table 15, and a light-receiving member was further formed on the adhesive layer under the same manufacturing conditions as in Example 1. Formed. Separately, a sample was prepared in which only an adhesive layer was formed. The light-receiving member was subjected to the same evaluation as in Example 1, and a part of the sample was cut out and measured at a diffraction angle of 27° using an X-ray diffraction device.
A diffraction pattern corresponding to nearby 5i(ill) was obtained to examine the presence or absence of crystallinity. The above results are shown in Table 16.

<Example 8> An adhesive layer was formed on the base cylinder under several manufacturing conditions shown in Table 17, and a light-receiving member was further formed on the adhesive layer under the same manufacturing conditions as in Example 1. Formed. Separately, a sample was prepared in which only an adhesive layer was formed. The light-receiving member was subjected to the same evaluation as in Example 1, and a part of the sample was cut out and measured at a diffraction angle of 27° using an X-ray diffraction device.
A diffraction pattern corresponding to nearby 5i(111) was obtained to examine the presence or absence of crystallinity. The above results are shown in Table 18.

<Example 9> The mirror-finished cylinder was further subjected to lathe processing using a sword bit with various angles, and a plurality of cylinders with cross-sectional shapes as shown in Fig. 19 and various cross-sectional patterns as shown in Table 19 were obtained. I have prepared a book. The cylinders were sequentially set in the manufacturing apparatus shown in FIG. 18 and subjected to drum manufacturing under the same manufacturing conditions as in Example 1. The produced drum has a wavelength of 780 nm.
Various evaluations were carried out using an electrophotographic device with a digital exposure function using a semiconductor laser having a wavelength of 1 as a light source, and the results shown in Table 20 were obtained.

<Example 10> The surface of the mirror-finished cylinder was subjected to a so-called surface dimple treatment, in which the surface of the cylinder was exposed to the fall of a large number of hard bearing balls in a row, resulting in countless dents on the cylinder surface. A plurality of cylinders having a cross-sectional shape as shown in FIG. 20 and various cross-sectional patterns as shown in Table 21 were prepared.

The cylinders are sequentially placed into the manufacturing apparatus shown in Fig. 18, and
A No. 6 drum was manufactured under the same manufacturing conditions as in Example 1. Various evaluations were performed on the manufactured drum t± from an electrophotographic apparatus with a digital exposure function using a semiconductor laser having a wavelength of 780 nm as a light source, and the results shown in Table 22 were obtained.

[Summary of effects of the invention]

The light receiving member of the present invention has a photoconductive layer composed of A-5i(H,X) and has a specific layer structure as described above. 3i
It can solve all the problems with conventional electrophotographic light-receiving members composed of (H, It is something that has gender, etc. In addition, there is no influence of residual potential and its electrical characteristics are stable, and the images obtained using it are extremely excellent, with high density and clear halftones. .

In particular, in the electrophotographic light-receiving member of the present invention, by providing a charge injection blocking layer, it has become possible to use a relatively low-resistance photoconductive layer that is sensitive to light in a relatively wide range of wavelengths. . Furthermore, by adopting the specific layer structure as described above, a large number of charges that are irradiated with light and thermally excited are swept out sufficiently quickly not only in the photoconductive layer but also in the charge injection blocking layer and the surface layer.

It is possible to stably and repeatedly obtain high-quality images with high M-image resolution and no residual potential or coasting under any exposure conditions.

[Brief explanation of drawings]

1-1 and 1-2 are schematic layer configuration diagrams for explaining the layer configuration of the all-invention electrophotographic light-receiving member, respectively;
FIGS. 2 to 6 are explanatory diagrams for explaining the distribution state of group II atoms or group V atoms constituting the charge injection blocking layer, and FIGS. 7 to 13 are respectively illustrations of the charge injection blocking layer. 14 to 16 are schematic diagrams for explaining the uneven shape of the surface of the support and the method for producing the uneven shape. FIG. 17 is a schematic layer configuration diagram showing another example of the electrophotographic light-receiving member of the present invention, and FIG. 18 is an example of an apparatus for forming the light-receiving layer of the electrophotographic light-receiving member of the present invention. FIG. 2 is a schematic explanatory diagram of a manufacturing apparatus using a glow discharge method. 19th
Figures 22 to 22 are explanatory diagrams of the distribution of carbon atoms and hydrogen atoms contained in the surface layer, Figures 23 and 24 are schematic diagrams showing the shape of the support, and Figures 25 and 26 are illustrations of the distribution of carbon atoms and hydrogen atoms contained in the surface layer. FIG. 2 is a distribution diagram showing the distribution of each molecule inside. Regarding FIG. 1 100...Photoreceptive layer, lot...Support, 10
2... Charge injection blocking layer, 103... Photoconductive layer, 104... Surface layer, 10
5...Free surface. Regarding Figure 15.16 1501.1601...Support, 150.2.1602...Support surface, 1503.1
603...Rigid pearl, 1504.1604...Spherical trace depression. Regarding FIG. 17, 1700... Photoreceptive layer, 170... Support, 1702... Charge injection blocking layer, 1703... Photoconductive layer, 1704... Surface layer, 1705... Free surface , Regarding FIG. 18, 1101...Reaction chamber, 1102-1106... Gas cylinder, 1107-11
11... Mass flow controller, 1112 to 1116
... Inflow valve, 1117-1121 ... Outflow valve, 1122-1126 ... Valve, 1127-1131 ... Pressure regulator, 1132.11
33... Auxiliary valve, 1134... Main valve, 1135... Leak valve, 1136... Vacuum gauge, 1137... Base cylinder, 1138... Heater, 1139... Motor, 1140... ...High frequency power supply.

Claims (12)

[Claims] (1) a support; on the support, a charge injection blocking layer made of a polycrystalline material containing silicon atoms as a matrix and containing a substance that controls conductivity; and an amorphous material containing at least one of halogen atoms as a constituent element,
a photoreceptive layer having a photoconductive layer exhibiting photoconductivity and a surface layer made of an amorphous material containing silicon atoms, carbon atoms, and hydrogen atoms as constituent elements; However, the concentration distribution of the constituent elements in the layer thickness direction is changed in such a manner that optical band gap consistency is obtained at least at the interface with the photoconductive layer, and the maximum concentration of hydrogen atoms in the surface layer is changed. A light-receiving member for electrophotography, characterized in that the amount of is 41 to 70 atom %. (2) The electrophotographic light-receiving member according to claim 1, wherein the distribution region of the constituent elements of the surface layer is present on the support side of the surface layer. (3) The light-receiving member for electrophotography according to claim 1, wherein the distribution region of the constituent elements of the surface layer covers the entire area of the surface layer. (4) The electrophotographic light according to Claims 2 and 3, wherein the surface layer contains carbon atoms in a distribution state in which carbon atoms are distributed more toward the surface side in the distribution region of the constituent elements. Receptive member. (5) The electrophotographic light according to Claims 1 and 4, wherein the surface layer contains hydrogen atoms in a distribution state in which more hydrogen atoms are distributed toward the surface side in the distribution region of the constituent elements. Receptive member. (6) The electrophotographic light-receiving member according to claim 1, wherein the surface layer contains halogen atoms. (7) Claim 1, wherein the photoconductive layer contains at least one of carbon atoms, oxygen atoms, and nitrogen atoms.
The electrophotographic light-receiving member according to items 6 to 6. (8) The electrophotographic light-receiving member according to claim 1, wherein the charge injection blocking layer contains oxygen atoms and/or nitrogen atoms. (9) The electrophotographic light-receiving member according to Claims 1 and 8, wherein the charge injection blocking layer contains a substance that controls conductivity in a distribution state in which the charge injection blocking layer is mostly distributed on the support side. (10) The electrophotographic light-receiving member according to any one of claims 8 to 9, wherein the charge injection blocking layer contains oxygen atoms and/or nitrogen atoms in a distribution state in which many of them are distributed on the support side. (11) The electrophotographic light-receiving member according to any one of claims 8 to 10, wherein the oxygen atoms and/or nitrogen atoms contained in the charge injection blocking layer are present on the support side. (12) An adhesion layer made of an amorphous material or a polycrystalline material containing at least one of an oxygen atom and a nitrogen atom and having silicon atoms as a matrix is provided between the support and the charge injection blocking layer. A light-receiving member for electrophotography according to claims 1 to 11.