JPS62181413A - Manufacture of capacitor - Google Patents
Manufacture of capacitorInfo
- Publication number
- JPS62181413A JPS62181413A JP61023221A JP2322186A JPS62181413A JP S62181413 A JPS62181413 A JP S62181413A JP 61023221 A JP61023221 A JP 61023221A JP 2322186 A JP2322186 A JP 2322186A JP S62181413 A JPS62181413 A JP S62181413A
- Authority
- JP
- Japan
- Prior art keywords
- metal oxide
- electrode
- capacitor
- insulator
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 41
- 150000004706 metal oxides Chemical class 0.000 claims description 41
- 239000012212 insulator Substances 0.000 claims description 15
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 14
- 239000003792 electrolyte Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 150000001768 cations Chemical class 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229940099596 manganese sulfate Drugs 0.000 description 4
- 235000007079 manganese sulphate Nutrition 0.000 description 4
- 239000011702 manganese sulphate Substances 0.000 description 4
- SQQMAOCOWKFBNP-UHFFFAOYSA-L manganese(II) sulfate Chemical compound [Mn+2].[O-]S([O-])(=O)=O SQQMAOCOWKFBNP-UHFFFAOYSA-L 0.000 description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 238000005868 electrolysis reaction Methods 0.000 description 3
- 239000008151 electrolyte solution Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- -1 hydrogen ions Chemical class 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- DOBUSJIVSSJEDA-UHFFFAOYSA-L 1,3-dioxa-2$l^{6}-thia-4-mercuracyclobutane 2,2-dioxide Chemical compound [Hg+2].[O-]S([O-])(=O)=O DOBUSJIVSSJEDA-UHFFFAOYSA-L 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- GAYPVYLCOOFYAP-UHFFFAOYSA-N [Nb].[W] Chemical compound [Nb].[W] GAYPVYLCOOFYAP-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910001437 manganese ion Inorganic materials 0.000 description 1
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003340 mental effect Effects 0.000 description 1
- 229910000370 mercury sulfate Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WYXIGTJNYDDFFH-UHFFFAOYSA-Q triazanium;borate Chemical compound [NH4+].[NH4+].[NH4+].[O-]B([O-])[O-] WYXIGTJNYDDFFH-UHFFFAOYSA-Q 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、コンデンサーの製造法に関するもので、特に
電極間に介在する絶縁体の形成法に関するＯ
従来の技術
金属酸化物を絶縁体としたコンデンサーには主として酸
化アルミ、酸化チタン、酸化タンタル。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing a capacitor, and in particular to a method for forming an insulator interposed between electrodes. are mainly aluminum oxide, titanium oxide, and tantalum oxide.
ガラス成分を絶縁体としたコンデンサーが良く知られて
いる。例えば酸化タンタルを用いたコンデンサーは次の
ようにして、作られる。ここでは、金属薄を用いたもの
で説明する。Capacitors that use glass as an insulator are well known. For example, a capacitor using tantalum oxide is manufactured as follows. Here, a method using thin metal will be explained.
即ち第２図に示すように、タンタル薄１（５０μ〜１０
０μの厚さが主に用いられる。）を電解液（例えばホウ
酸アンモン、硫酸が用いられる。）中で１ｍ人〜ｓｍＡ
／ｙの電流密度で電解酸化し、その表面に酸化タンタル
２を第１金属酸化物層として形成した後、酸化タンタル
で覆われた電極を ゛加熱しながら硝酸マンガン溶液
を吹きつけ、熱分解法により二酸化マンガンをその表面
に第２金属酸化物層３として形成する。この後、コロイ
ダルカーボン４を塗布し乾燥、硬化させた後、メタリコ
ン溶射により・・ンダ付は可能な金属６で覆った後、リ
ード線６，７をガラスハンダの如きものでハンダ８づけ
を行ない全体を樹脂９でもってモールドを行ないコンデ
ンサーとしている。That is, as shown in Fig. 2, tantalum thin 1 (50μ~10
A thickness of 0μ is mainly used. ) in an electrolytic solution (for example, ammonium borate or sulfuric acid is used) at 1 mA to smA.
After electrolytic oxidation is performed at a current density of /y to form tantalum oxide 2 as the first metal oxide layer on the surface, the electrode covered with tantalum oxide is sprayed with a manganese nitrate solution while heating, and then pyrolyzed. Manganese dioxide is formed as a second metal oxide layer 3 on the surface. After this, colloidal carbon 4 is applied, dried, and hardened, and then covered with a metal 6 that can be soldered by spraying metallicon, and the lead wires 6 and 7 are soldered 8 with something like glass solder. The entire structure is molded with Resin 9 to form a capacitor.
このような方法、特に第１金属酸化物層を形成したのち
、第２金属酸化物層を形成するに際し用いられる熱分解
法では、その生成効率が極めて悪いものがあった。Some of these methods, particularly the thermal decomposition method used to form the second metal oxide layer after forming the first metal oxide layer, have extremely poor production efficiency.
発明が解決しようとする問題点
金属酸化物よりなる第１絶縁体表面に更に第２絶縁体を
積層することは、第１絶縁体が導体でないがため、真空
系における蒸着法又は大気下では熱分解法で行う他は方
法がなかった。真空系で行う事は極めて作業能率が悪く
、したがって、殆んどが、熱分解法によシ第２金属酸化
物として絶縁層を作成していた。本発明では、電極を被
覆した第１金属酸化物」二へ更に第２金属酸化物を形成
する際、直接、電気化学的に第２金属酸化物を作成する
ことにより、湿式状態が連続した状態でコンデンサーを
作成し、その作業効率を向上させようとするものである
。Problems to be Solved by the Invention Since the first insulator is not a conductor, laminating a second insulator on the surface of the first insulator made of a metal oxide requires vapor deposition in a vacuum system or heat treatment in the atmosphere. There was no other way but to use the decomposition method. It is extremely inefficient to perform this in a vacuum system, and therefore, in most cases, the insulating layer is created using a second metal oxide using a thermal decomposition method. In the present invention, when forming the second metal oxide on the first metal oxide covering the electrode, the second metal oxide is directly electrochemically created, so that the wet state is continuous. The purpose of this project is to create a capacitor and improve its working efficiency.
問題点を解決するだめの手段
第１絶縁体表面に第２絶縁体を積層するに際して、電気
化学的方法による析出を用いる。A further means of solving the problem is to use electrochemical deposition to deposit the second insulator on the surface of the first insulator.
作用
本発明は、第１金属酸化物で被覆された電極を電解液中
で電解還元することにより、電解液中の例えば水素イオ
ンが第１金属酸化物中にインク力レーンヨンし、この状
態を酸化すると基の酸化物へ可逆的に反応が進行する。Effect of the present invention: By electrolytically reducing an electrode coated with a first metal oxide in an electrolytic solution, for example, hydrogen ions in the electrolytic solution migrate into the first metal oxide, and this state is oxidized. Then, the reaction proceeds reversibly to form an oxide of the group.
この際、金属酸化物は絶縁体から導体に可逆的にその特
性を変へる。At this time, the metal oxide reversibly changes its properties from an insulator to a conductor.
本発明はこうした金属酸化物の性質に注目した事に起因
する。導体となった状態で、酸化反応を行うと電子の授
受は素早く進行するが、金属酸化物内に注入されたイオ
ンの動きが遅れるため、第１金属酸化物内にイオンを注
入した後、素早く、電圧を反転すると、第１金属酸化物
表面で酸化反応を短時間進めうるものとなる。したがっ
て、第１金属酸化物を形成後、例えば硫酸マンガン溶液
中で、周期的に一定時間、電解還元を行ないながら電解
酸化を行う、反転矩形波電解を行う事により、その表面
に二酸化マンガンを析出させることが可能となる。その
結果、前記問題が解決されうるものとなる。The present invention results from paying attention to the properties of such metal oxides. When an oxidation reaction is performed in a conductive state, electron transfer proceeds quickly, but the movement of ions injected into the metal oxide is delayed, so after ions are injected into the first metal oxide, the transfer of electrons proceeds quickly. When the voltage is reversed, the oxidation reaction can proceed for a short time on the surface of the first metal oxide. Therefore, after forming the first metal oxide, manganese dioxide is precipitated on the surface by performing electrolytic oxidation while periodically performing electrolytic reduction for a certain period of time in a manganese sulfate solution, for example, by performing inverted rectangular wave electrolysis. It becomes possible to do so. As a result, the above problem can be solved.
実施例
金属酸化物よりなる絶縁物で被覆された電極を電解液中
で還元すると金属酸化物内に電解液中の水素、リチウム
、ナトリウム、カリウム等の陽イオンがインタカレーシ
ョンする。例えば、金属酸化物上して、酸化タングステ
ン（ＷＯｓ）では、この反応は次式で通行することが知
られている。Example When an electrode coated with an insulator made of a metal oxide is reduced in an electrolyte, cations such as hydrogen, lithium, sodium, potassium, etc. in the electrolyte are intercalated into the metal oxide. For example, for metal oxides such as tungsten oxide (WOs), this reaction is known to proceed as follows.
ｗｏ５−４−ＸＭ−１−Ｘ６ ｇ ＭＸＷＯ３（式中
、Ｍ＋は陽イオン、Ｘは反応に関係する電子数を示す。wo5-4-XM-1-X6 g MXWO3 (wherein, M+ is a cation, and X represents the number of electrons involved in the reaction.
）即ち、最初、絶縁物であるＷＯ，内でＭイオンが電子
を受け（還元） ＋ Ｍｘ ＷＯｓ なるものに変化す
る。変化し九ＭｘＷＯ５は電子伝導性となり、金属伝導
を示す。一方、第１層の金属酸化物上に更に第２層の金
属酸化物を形成する反応は、例えば、第２層の金属酸化
物として二酸化マンガンを用いる場合、硫酸マンガン中
に電極を挿入し、電解酸化すればよい。即ち、二酸化マ
ンガン形成反応は、金属酸化物へのイオンのインタカレ
ーション反応とは全く逆の反応となる。) That is, first, M ions receive electrons (reduction) in WO, which is an insulator, and change into + Mx WOs. After the change, MxWO5 becomes electronically conductive and exhibits metallic conduction. On the other hand, the reaction of forming a second layer of metal oxide on the first layer of metal oxide can be carried out, for example, by inserting an electrode into manganese sulfate when manganese dioxide is used as the second layer of metal oxide. Electrolytic oxidation is sufficient. That is, the manganese dioxide forming reaction is completely opposite to the ion intercalation reaction into the metal oxide.
本発明では、前記、２種の反応を同一電解条件のもとに
進めることにより、第１金属酸化物上に第２金属酸化物
を積層することが可能であることを見い出しだ事に基づ
いている。具体的には、第１金属酸化物で被覆された電
極を、硫酸マンガン電解液中で、電解酸化、還元を周期
的に繰り返すことにより、即ち、還元により第１金属酸
化物に陽イオンをインタカレーションし、つづいて、酸
化することにより陽イオンが第１酸化物内に残存する内
に、その表面で、電解液中のマンガンイオンを酸化し、
二酸化マンガン層を第２金属酸化物として形成すること
が出来るものである。The present invention is based on the discovery that it is possible to stack the second metal oxide on the first metal oxide by proceeding with the two types of reactions mentioned above under the same electrolytic conditions. There is. Specifically, by periodically repeating electrolytic oxidation and reduction of the electrode coated with the first metal oxide in a manganese sulfate electrolyte, cations are infused into the first metal oxide by reduction. oxidation and then oxidation to oxidize manganese ions in the electrolyte on the surface while cations remain in the first oxide,
The manganese dioxide layer can be formed as a second metal oxide.
以下、本発明を実施例を用い説明する。The present invention will be explained below using examples.
実施例１
第１図中は本発明を遂行するために用いた、第２金属酸
化物を電解析出させるため電解装置を示したものである
。図中１０はガラスセパレーター１１を中間に介在させ
たガラスよりなる電槽で、１２は電解液、１３はコンデ
ンサーを形成させるだめの電極、１４は白金よりなる対
極、１５は硫酸水銀参照電極、１６は電解のだめのポテ
ンシオスタット、１７は、ファンクションゼネレーター
を各々示す。Example 1 FIG. 1 shows an electrolytic apparatus for electrolytically depositing a second metal oxide, which was used to carry out the present invention. In the figure, 10 is a battery case made of glass with a glass separator 11 interposed in between, 12 is an electrolyte, 13 is an electrode for forming a capacitor, 14 is a counter electrode made of platinum, 15 is a mercury sulfate reference electrode, 16 1 shows an electrolytic reservoir potentiostat, and 17 shows a function generator.
電極材料として、タンタル薄（１０ｒ＋ｕｔ＋ Ｘ １
０＋ｔ＋＋ｕ、厚さ６０μ）を電極４として用い、先ず
５ｍＡ／ａｎ”の電流密度で、３０分間硫酸電解液中で
陽極酸化し、その表面に酸化メンタル被覆を第１金属酸
化物層として成長させた。つづいて、硫酸マンガン電解
液を含む電槽１中に第１金属酸化物層を有する電極を挿
入し、＋６０ｖ、１０秒、 −１，ＯＶ、１０秒の反転
矩形波パルスを与え１時間電解した結果、第１金属酸化
層の上に二酸化マンガンを第２金属酸化物として形成す
ることが出来た。続いて、１係のビロールを含む硫酸電
解液中で＋１．０７４秒。As an electrode material, tantalum thin (10r+ut+
0+t++u, thickness 60μ) was used as the electrode 4, and it was first anodized in a sulfuric acid electrolyte for 30 minutes at a current density of 5mA/an'', and an oxidized mental coating was grown on its surface as the first metal oxide layer. Next, the electrode having the first metal oxide layer was inserted into the battery container 1 containing the manganese sulfate electrolyte, and electrolysis was carried out for 1 hour by applying inverted square wave pulses of +60V for 10 seconds and -1,OV for 10 seconds. As a result, manganese dioxide was able to be formed as a second metal oxide on the first metal oxide layer.Subsequently, it was heated for +1.074 seconds in a sulfuric acid electrolyte containing virol of the first stage.
−１，ｏＶ１秒の電位パルスを１時間繰り返し与え電導
性有機高分子であるポリピロールを析出させ、もう一方
の電極とした。このようにして作成したコンデンサー基
体を水洗、乾燥後、導電性ペーストでもってリードを固
定し、外部への電極端子としだ。然るのち、素子全体を
樹脂でモールドすることによりコンデンサーを作成する
ことが出来た。A potential pulse of -1.oV for 1 second was repeatedly applied for 1 hour to deposit polypyrrole, which is a conductive organic polymer, and used it as the other electrode. After washing the capacitor base created in this way and drying it, the leads were fixed with conductive paste and used as electrode terminals to the outside. Afterwards, we were able to create a capacitor by molding the entire element with resin.
実施例２
電極材料としてアルミ薄（１０ｍｍＸ １０ｍｍ、厚さ
６０μ）を用い、実施例１と同様、酸化アルミ。Example 2 Aluminum thin (10 mm x 10 mm, thickness 60 μm) was used as the electrode material, and aluminum oxide was used as in Example 1.
二酸化マンガンをアルミ薄表面に第１金属酸化物。Manganese dioxide is the first metal oxide on the aluminum thin surface.
第２金属酸化物として形成した。然るのち、該電極を水
洗し、空気中でｅｏｏ℃で炊成し表面酸化物を強固なも
のとしたのち、コワイダルカーボンを塗布し、該カーボ
ンを酸化層面に乾燥、硬化させて、亜鉛をメタリコン溶
射し附着したのち、電極リードをハンダで固定した後、
素子全体を樹脂モールドを行なう事により、コンデンサ
ーを作成することが出来た。It was formed as a second metal oxide. After that, the electrode was washed with water and heated in air at eoo°C to make the surface oxide strong. After that, coydal carbon was applied, and the carbon was dried and hardened on the oxide layer surface to form a zinc layer. After attaching it by spraying metallicon and fixing the electrode lead with solder,
By molding the entire element into resin, we were able to create a capacitor.
尚、上記実施例には、タンタル、アルミを電極としたコ
ンデンサーのみを記載しだが、他チタン。In the above examples, only capacitors using tantalum or aluminum as electrodes are described, but other materials such as titanium or titanium may be used.
モリブデン、タングステンニオブ、シリコン等、バルブ
メタルを初めニッケル、ロジウム、イリジウム等、各種
金属酸化物を形成する電極材料は全て使用可能である。All electrode materials that form various metal oxides, including valve metals such as molybdenum, tungsten niobium, and silicon, as well as nickel, rhodium, and iridium, can be used.
発明の効果
以上、実施例において明らかなように、第１金属酸化物
よりなる絶縁体上に直接、電解により第２金属酸化物層
を析出させ、コンデンサーの絶縁体とすることが可能で
あることが判明した。即ち、真空系、熱分解法とは異な
り湿式状態で連続的に形成することが出来るだめ、作業
能率・効率の向上が明らかに期待されるものとなる。In addition to the effects of the invention, as is clear from the examples, it is possible to deposit a second metal oxide layer directly on an insulator made of a first metal oxide by electrolysis and use it as an insulator for a capacitor. There was found. That is, unlike a vacuum system or a thermal decomposition method, it can be formed continuously in a wet state, and an improvement in work efficiency and efficiency is clearly expected.
第１図は金属酸化物形成のだめに使用した電解装置のブ
ロック図、第２図はコンデンサー構成の断面図である。
１０・・・・・・電槽、１１・・・・・・ガラスセパレ
ーター、１２・・・・・・電解液、１３・・・・・・電
極、１４・・・・・・対向電極、１５・・・・・・参照
電極、１６・・・・・・ボテンシオスタント、１７・・
・・・・ファンクションゼネレータ。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図FIG. 1 is a block diagram of the electrolytic apparatus used to form the metal oxide, and FIG. 2 is a cross-sectional view of the capacitor configuration. 10...Battery container, 11...Glass separator, 12...Electrolyte, 13...Electrode, 14...Counter electrode, 15 ...Reference electrode, 16...Botentio stunt, 17...
...Function generator. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
figure
Claims (1)
を介在させてなるコンデンサーを製造するに際して、絶
縁体に接触する、もう一つの絶縁体の形成を電気化学的
に析出させる事を特徴とするコンデンサーの製造法。When manufacturing a capacitor in which an insulator made of two or more metal oxides is interposed between a pair of electrodes, another insulator that comes into contact with the insulator is electrochemically deposited. A manufacturing method for a capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61023221A JPS62181413A (en) | 1986-02-05 | 1986-02-05 | Manufacture of capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61023221A JPS62181413A (en) | 1986-02-05 | 1986-02-05 | Manufacture of capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62181413A true JPS62181413A (en) | 1987-08-08 |
Family
ID=12104594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61023221A Pending JPS62181413A (en) | 1986-02-05 | 1986-02-05 | Manufacture of capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62181413A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5819757A (en) * | 1981-07-29 | 1983-02-04 | Hitachi Ltd | Control circuit of tape recorder |
-
1986
- 1986-02-05 JP JP61023221A patent/JPS62181413A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5819757A (en) * | 1981-07-29 | 1983-02-04 | Hitachi Ltd | Control circuit of tape recorder |
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