JPS6218050Y2 - - Google Patents

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Publication number
JPS6218050Y2
JPS6218050Y2 JP17034181U JP17034181U JPS6218050Y2 JP S6218050 Y2 JPS6218050 Y2 JP S6218050Y2 JP 17034181 U JP17034181 U JP 17034181U JP 17034181 U JP17034181 U JP 17034181U JP S6218050 Y2 JPS6218050 Y2 JP S6218050Y2
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JP
Japan
Prior art keywords
semiconductor element
cooling plate
semiconductor device
plate
electrode
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Expired
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JP17034181U
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Japanese (ja)
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JPS57181040U (en
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Priority to JP17034181U priority Critical patent/JPS6218050Y2/ja
Publication of JPS57181040U publication Critical patent/JPS57181040U/ja
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Description

【考案の詳細な説明】 この考案は電力用半導体装置に関する。[Detailed explanation of the idea] This invention relates to a power semiconductor device.

産業用電源装置あるいは車輌用整流器等に使用
される電力用素子は信頼性および安全率の高い設
計が要求され、そのため従来の電力用素子はたと
えば第1図に示すように半導体素子1をいわゆる
銅スタツド2上に半田付けあるいは圧接し、ガラ
スシールしたハウジング3で気密に封止したいわ
ゆるスタツド型のものが用いられていた。この場
合半導体素子1のカソード電極4、ゲートリード
5等をガラス封止部6を貫通させて引出し、それ
ぞれ端子7,8に導通させるため、外形上嵩が著
しく大きくなり、さらにこのスタツド型半導体装
置、複数個を冷却板上に取付け、たとえばフオー
クリフトや電気自動車等に使用する場合、各装置
の突起物のため場所をとり、他の部品の装着上邪
魔になるなどの問題があつた。そのほか、このス
タツド型半導体装置は使用する銅スタツドあるい
はハウジングが製造上高価格となり、装置全体の
価格に占める割合が非常に大きく、低価格化の障
害となつていた。
Power devices used in industrial power supplies, vehicle rectifiers, etc. are required to have a design with high reliability and a high safety factor.For this reason, conventional power devices use a semiconductor device 1 made of so-called copper, as shown in Figure 1. A so-called stud type was used, in which the stud 2 was soldered or pressure-bonded and hermetically sealed with a glass-sealed housing 3. In this case, the cathode electrode 4, gate lead 5, etc. of the semiconductor element 1 are drawn out through the glass sealing part 6 and are electrically connected to the terminals 7 and 8, respectively, so the external bulk becomes significantly large, and furthermore, this stud-type semiconductor device When a plurality of devices are mounted on a cooling plate and used in, for example, a forklift or an electric vehicle, the protrusions of each device take up space and get in the way of mounting other parts. In addition, the copper studs or housing used in this stud-type semiconductor device are expensive to manufacture and account for a very large portion of the overall device price, which has been an obstacle to lowering the price.

この考案は上記事情に鑑みてなされたものであ
つて、装置の信頼性および安全率の高い設計を維
持した状態で、小型軽量化並びに低価格化を図る
ことができる電力用半導体装置を提供することを
目的とする。
This idea was made in view of the above circumstances, and aims to provide a power semiconductor device that can be made smaller, lighter, and cheaper while maintaining a design with high reliability and safety factor. The purpose is to

すなわち、この考案は導電性冷却板と、該冷却
板の主面上に載置された半導体素子と、この半導
体素子を囲繞するようにして上記冷却板上に配置
され上下面が開口した絶縁性外囲器と、上記絶縁
性外囲器の上面を密閉する板状蓋体と、上記外囲
器内に装着され、上記半導体素子を、上記冷却板
方向に押圧するバネ体と、上記半導体素子の電極
部から上記板状蓋体上面の平面状態を実質的に害
さないようにして上記絶縁性外囲器を貫通し、あ
るいは該蓋体を貫通して導出させた外部電極と、
上記冷却板および板状蓋体と上記絶縁性外囲器と
を相互に直接、気密に圧接させ固定する手段と、
外部電極取出し部と上記絶縁性外囲器とを相互に
直接、気密に圧接させ固定する手段とを具備する
ことを特徴とする電力用半導体装置を提供するも
のである。
That is, this invention consists of an electrically conductive cooling plate, a semiconductor element placed on the main surface of the cooling plate, and an insulating semiconductor element placed on the cooling plate surrounding the semiconductor element and having open upper and lower surfaces. an envelope, a plate-like lid that seals the upper surface of the insulating envelope, a spring body that is installed in the envelope and presses the semiconductor element toward the cooling plate, and the semiconductor element. an external electrode that extends from the electrode portion through the insulating envelope or through the lid without substantially damaging the planar state of the upper surface of the plate-shaped lid;
means for directly and airtightly press and fix the cooling plate and plate-like lid body and the insulating envelope to each other;
The present invention provides a power semiconductor device characterized by comprising means for directly and airtightly pressing and fixing the external electrode lead-out portion and the insulating envelope to each other.

以下、本考案を図示の実施例に基づいて説明す
る。第2図中、11は導電性冷却板であつて、そ
の上面にアノード電極13が接触するようにし
て、電力用半導体素子12が載置されている。さ
らにこの冷却板11上にはこの半導体素子12を
囲むようにして、絶縁性外囲器14が載置されて
いる。この外囲器14の上面にはその開口部を密
閉する板状蓋体15が設けられている。これら冷
却板11、外囲器14および蓋体15は適当な圧
接固定手段、たとえば複数個のボルト16によつ
て圧締されているとともに、冷却板11、外囲器
14および蓋体15相互間の接触面の少なくとも
いずれか一方には、外囲器14の上下両開口部を
囲むようにして、環状溝17が穿設されていて、
各環状溝17に沿つて弾性絶縁体18が嵌合、圧
縮されている。そのため、半導体素子12が収容
された外囲器14内部の気密性は高度に保たれて
いる。なお、ボルト16は両端がそれぞれ冷却板
11および蓋体15から突出しないようにこれら
冷却板11および蓋体15に凹部19,20が設
けられている。また蓋体の材質として金属等の導
電性材料を使用する場合は図示の如く凹部20に
絶縁部材21を介在させボルト16と蓋体15と
の絶縁を保つことができるが、絶縁材料を使用す
る場合は当然その必要はない。半導体素子12の
カソード電極22上には半導体素子12の熱疲労
によるクラツク等の防止を図るため、その半導体
材料、たとえばSiと熱膨張係数のほぼ等しい金属
29、たとえばMoまたはWを介して電極体23
が設けられ、この電極体23上にさらに外囲器1
4の側孔24へ一端が導入されたカソード外部引
出し電極25の他端が設けられている。このカソ
ード外部引出し電極25の他端上には絶縁板26
を介して複数個のバネ27が絶縁板26を半導体
素子12方向へ付勢させた状態で設けられてい
る。しかして、半導体素子12はこのバネ27に
よつて冷却板11上に押圧、固定される。
Hereinafter, the present invention will be explained based on the illustrated embodiments. In FIG. 2, reference numeral 11 denotes a conductive cooling plate, and a power semiconductor element 12 is placed on the top surface of the conductive cooling plate 11 so that an anode electrode 13 is in contact therewith. Furthermore, an insulating envelope 14 is placed on the cooling plate 11 so as to surround the semiconductor element 12 . A plate-shaped lid 15 is provided on the upper surface of the envelope 14 to seal the opening thereof. The cooling plate 11, the envelope 14, and the lid 15 are clamped together by appropriate pressure fixing means, such as a plurality of bolts 16, and the cooling plate 11, the envelope 14, and the lid 15 are connected to each other. An annular groove 17 is bored in at least one of the contact surfaces of the envelope 14 so as to surround both the upper and lower openings of the envelope 14,
An elastic insulator 18 is fitted and compressed along each annular groove 17 . Therefore, the airtightness inside the envelope 14 in which the semiconductor element 12 is housed is maintained at a high level. Incidentally, recesses 19 and 20 are provided in the cooling plate 11 and the lid 15 so that both ends of the bolt 16 do not protrude from the cooling plate 11 and the lid 15, respectively. In addition, when a conductive material such as metal is used as the material of the lid body, insulation between the bolt 16 and the lid body 15 can be maintained by interposing an insulating member 21 in the recess 20 as shown in the figure. Of course, there is no need to do so. In order to prevent cracks and the like due to thermal fatigue of the semiconductor element 12, an electrode body is placed on the cathode electrode 22 of the semiconductor element 12 via a metal 29, for example, Mo or W, whose coefficient of thermal expansion is approximately equal to that of the semiconductor material, for example, Si. 23
is provided, and an envelope 1 is further provided on this electrode body 23.
One end of the cathode externally drawn electrode 25 is introduced into the side hole 24 of No. 4, and the other end thereof is provided. An insulating plate 26 is placed on the other end of this cathode external extraction electrode 25.
A plurality of springs 27 are provided to bias the insulating plate 26 toward the semiconductor element 12 via the insulating plate 26 . Thus, the semiconductor element 12 is pressed and fixed onto the cooling plate 11 by the spring 27.

カソード外部引出し電極25の外側面にはL字
型カソード外部電極28がネジ30を介して圧着
されている。この場合も外囲器14内部の気密性
を保持するため、電極28と外囲器14との対向
面の少なくとも一方に、カソード外部引出し電極
25を囲む環状溝を設け、その溝に沿つて弾性絶
縁体18を嵌入させることが望ましい。なお、ネ
ジ30には図示の如く、弾性絶縁輪パツキン31
を介在させるか、あるいは単にネジの露出部分に
気密性のコーテングを施してもよい。カソード外
部引出し電極25と外囲器14との間の間隙32
およびカソード外部電極28の取着されている外
囲器側面の凹部の間隙33は装置の熱膨張に上る
歪みを回避したい場合に適宜設けられる。
An L-shaped cathode external electrode 28 is crimped onto the outer surface of the cathode external extraction electrode 25 via a screw 30 . In this case as well, in order to maintain airtightness inside the envelope 14, an annular groove surrounding the cathode externally drawn electrode 25 is provided on at least one of the facing surfaces of the electrode 28 and the envelope 14, and an annular groove is provided along the groove. Preferably, the insulator 18 is fitted. In addition, the screw 30 has an elastic insulating ring packing 31 as shown in the figure.
or simply apply an air-tight coating to the exposed portion of the screw. Gap 32 between cathode external extraction electrode 25 and envelope 14
A gap 33 in the recess on the side surface of the envelope to which the cathode external electrode 28 is attached is provided as appropriate when it is desired to avoid distortion due to thermal expansion of the device.

半導体素子12が収納されている部分にN2
Ar等の活性度の小さいガスを封入したり、半導
体素子の表面保護剤としてガラス質を使用するこ
とによつて装置の寿命、信頼性を向上させること
もできる。なお、ボルト16は第3図の如く冷却
板11を貫通させずに、冷却板11中に途中まで
切つたタツプにねじ込むようにしてもよい。ま
た、電極体23に、第3図に示すように、カソー
ド外部引出し電極25を貫通する突出部23aを
設け、この突出部23aに対応させて絶縁板26
にも突出筒部26aを設け、突出部23aを囲繞
させ、バネ27と電極23と絶縁性を保つように
すれば、これら突出部がガイドとなり組立上有利
となる。
N 2 ,
The life and reliability of the device can also be improved by sealing in a gas with low activity such as Ar or by using glass as a surface protective agent for semiconductor elements. Note that the bolts 16 may be screwed into taps cut halfway into the cooling plate 11 instead of passing through the cooling plate 11 as shown in FIG. Further, as shown in FIG. 3, the electrode body 23 is provided with a protrusion 23a that penetrates the cathode external extraction electrode 25, and an insulating plate 26 is provided in correspondence with the protrusion 23a.
If a protruding cylindrical portion 26a is provided in the cylindrical portion 26a to surround the protruding portion 23a and maintain insulation between the spring 27 and the electrode 23, these protruding portions will serve as a guide, which will be advantageous in terms of assembly.

なお、上記と同様の要領によつて冷却板11上
に複数個の半導体素子を絶縁物で隔離して、並設
させることも当然可能である。この場合、冷却板
11は同電位に保たれる。
Note that it is naturally possible to separate a plurality of semiconductor elements with an insulator and arrange them side by side on the cooling plate 11 in the same manner as described above. In this case, the cooling plate 11 is kept at the same potential.

第4図は半導体素子としてサイリスタを用いた
場合に、ゲート電極またはベース電極を気密を保
ちながら外部へ引出す方法を示すものであり、他
の構成部材および各構成部材の組立て機構につい
ては、上記第2図で説明したのと同様である。し
たがつて第4図の実施例においては、第2図のも
のと同様の各構成部材については同一の符号を付
することによつてその説明を省略し、異なる部材
の機構についてのみ説明する。
Fig. 4 shows a method of drawing out the gate electrode or base electrode to the outside while maintaining airtightness when a thyristor is used as a semiconductor element.The other constituent members and the assembly mechanism of each constituent member are described in the above-mentioned section. This is the same as explained in FIG. Therefore, in the embodiment shown in FIG. 4, each component similar to that shown in FIG. 2 is designated by the same reference numeral, and a description thereof will be omitted, and only the mechanisms of the different members will be described.

絶縁性外囲器の一側壁14にこれを貫通するタ
ツプが切られていて、このタツプ内に、外ネジを
形成した中空金属スリーブ34がこの側壁を貫通
するようにしてねじ込まれている。この場合も装
置内部の気密性を保持するため、弾性輪パツキン
35等の気密保持部材をスリーブ34のヘツド部
36に介在させることが好ましい。半導体素子1
2から絶縁チユーブ37内を通じて導出されたゲ
ートリードあるいはベースリード38はスリーブ
34内に導入され、外部へ引き出されるととも
に、ヘツド部36よりも外側部分でゲートリード
あるいはベースリード38とスリーブ34とが圧
着されている。なお、ヘツド部36の外側に設け
られたネジ山39はゲート(あるいはベース)取
付用端子をナツト締めするための一手段を示して
いる。
A tap is cut through one side wall 14 of the insulating envelope, into which an externally threaded hollow metal sleeve 34 is screwed through the side wall. In this case as well, in order to maintain the airtightness inside the device, it is preferable to interpose an airtightness maintaining member such as an elastic ring packing 35 in the head portion 36 of the sleeve 34. Semiconductor element 1
The gate lead or base lead 38 led out from the insulating tube 37 from the insulating tube 37 is introduced into the sleeve 34 and pulled out to the outside, and the gate lead or base lead 38 and the sleeve 34 are crimped at a portion outside the head portion 36. has been done. Note that the screw thread 39 provided on the outside of the head portion 36 represents one means for tightening the gate (or base) mounting terminal with a nut.

第5ないし第8図はゲートリード(あるいはベ
ースリード)38を取出すための他の実施例を示
すものであり、第5図および第6図に示す例はス
リーブ34のヘツド部36に複数個の取付け孔を
設け、この取付孔を介して、、外囲器14の一側
にネジ止めしたものを示し、第5図の場合、単に
ボルト39によつて締め付たものに対し、第6図
の場合はナツト40によつて固定した態様を示し
ている。第7図には中空部41が外部に貫通して
いないスリーブ34の例を示し、第8図のものは
中空部41内に軟質金属チユーブ42を打込みリ
ード38との接触を容易にした例を示す。
5 to 8 show other embodiments for taking out the gate lead (or base lead) 38, and the example shown in FIGS. A case is shown in which a mounting hole is provided and screwed to one side of the envelope 14 through this mounting hole. In the case shown in FIG. FIG. 7 shows an example of a sleeve 34 in which the hollow portion 41 does not penetrate to the outside, and FIG. 8 shows an example in which a soft metal tube 42 is driven into the hollow portion 41 to facilitate contact with the lead 38. show.

第9図に示す例は第2図に示す実施例において
カソード外部取出し電極25を外囲器14の側壁
を貫通して設けたのに対し、外囲器14の上面開
口部を密閉する蓋体15を貫通させてカソード外
部取出し電極を設け、カソード電極をこれから側
方に導出させたことを特徴とするものである。以
下、これを第9図に基づいて説明するが、第2図
の実施例と同様の構成部材については同一の符号
を付することによつてその説明を省略する。
In the example shown in FIG. 9, the cathode external extraction electrode 25 is provided through the side wall of the envelope 14 in the embodiment shown in FIG. 15 is penetrated to provide a cathode external extraction electrode, and the cathode electrode is led out laterally from this. Hereinafter, this will be explained based on FIG. 9, but the same reference numerals will be given to the same constituent members as in the embodiment of FIG. 2, and the explanation thereof will be omitted.

第9図に示す実施例においては半導体素子12
のカソード電極22上に適当な熱膨張係数を有す
る金属部材29を介して設けられるカソード電極
引出し用導電体43として段部44を有する棒状
のものが用いられている。しかして、この段部4
4にバネ26の下端を係止させ、バネ26による
半導体素子12の固定が図られている。このカソ
ード電極引出し用導電体43はバネ26を貫通
し、その上端が蓋体15の上面に設けられた凹部
45内に貫通して設けられ、その露出上面にカソ
ード電極46の一端がボルト47を介して圧接さ
れている。この圧接部のカソード電極46あるい
は蓋体15の少なくともいずれか一方に前記実施
例同様に環状溝が設けられ、この環状溝に沿つて
弾性絶縁部材18が嵌入され、気密性を保持する
ように図られている。なお、カソード電極46は
蓋体15に溝を設け、この溝内に這わせることに
よつて蓋体15上面の平坦性が実質的に確保され
ている。なお、本明細書中において、半導体装置
の上面が実質的に平坦であるとは、上面に多少の
凹凸があつたとしても、ほぼ平坦であるとみなし
得る場合を含む概念である。
In the embodiment shown in FIG.
A rod-shaped conductor 43 having a stepped portion 44 is used as a conductor 43 for leading out the cathode electrode, which is provided on the cathode electrode 22 via a metal member 29 having an appropriate coefficient of thermal expansion. However, this step 4
4 is engaged with the lower end of the spring 26, and the semiconductor element 12 is fixed by the spring 26. This conductor 43 for drawing out the cathode electrode passes through the spring 26, and its upper end is provided so as to penetrate into the recess 45 provided on the upper surface of the lid 15, and one end of the cathode electrode 46 is attached to the exposed upper surface with a bolt 47. They are pressed together through the An annular groove is provided in at least one of the cathode electrode 46 and the lid 15 of this press-contact portion, as in the previous embodiment, and an elastic insulating member 18 is fitted along this annular groove to maintain airtightness. It is being Note that the cathode electrode 46 is provided with a groove in the lid 15, and the flatness of the upper surface of the lid 15 is substantially ensured by extending the cathode electrode 46 into the groove. Note that in this specification, the term "the top surface of a semiconductor device is substantially flat" includes a case where the top surface can be considered to be substantially flat even if the top surface has some unevenness.

以上詳述したように、この考案によれば、従来
のスタツド型半導体装置の如き気密封止用外囲器
を用いることなく、1個または複数個の半導体素
子を1個の冷却板上に気密封止することができる
ため、製造コストの大巾な節減を図ることがで
き、しかも半導体素子は冷却板上に直接圧接され
ているため熱抵抗が小さく冷却効率が良くなり装
置全体の小型軽量化を図ることができる。さら
に、半導体素子の電極は装置の側面に導出される
ため、装置の上下面は平板状に保たれ、そのため
電気自動車等の制御装置等に装着する場合、邪魔
とならず、かつ他の部品をこの半導体装置の上面
に取付けることも可能となるなど実用上極めて有
利となる。この発明に係わる半導体装置をたとえ
ばフオークリフト用チヨツパー回路(サイリスタ
ー2個、ダイオード3個を冷却体上に取付けたも
の)に採用したところ、従来のスタツド型装置を
用いたものと比較して重量で65%、嵩(外形)で
65%、価格で40%の低減を図ることができた。
As described in detail above, according to this invention, one or more semiconductor elements are air-tightly placed on one cooling plate without using an airtight enclosure as in the conventional stud-type semiconductor device. Since it can be sealed tightly, manufacturing costs can be greatly reduced, and since the semiconductor element is directly pressure-bonded to the cooling plate, thermal resistance is low and cooling efficiency is improved, making the entire device smaller and lighter. can be achieved. Furthermore, since the electrodes of the semiconductor element are led out to the side of the device, the top and bottom surfaces of the device are kept flat, so when it is installed in a control device such as an electric vehicle, it does not get in the way and does not interfere with other parts. This is extremely advantageous in practice, as it becomes possible to attach it to the top surface of the semiconductor device. When the semiconductor device according to the present invention is applied to, for example, a chopper circuit for a forklift (in which two thyristors and three diodes are mounted on a cooling body), it is lighter in weight than a device using a conventional stud-type device. 65%, bulk (outside shape)
We were able to achieve a 65% reduction in price and a 40% reduction in price.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のスタツド型の電力用半導体装置
の断面図、第2図は本考案に係わる電力用半導体
装置の断面図、第3図および第4図は本考案の他
の実施例に係わる電力用半導体装置の要部断面
図、第5ないし第8図は本考案の装置に使用され
る電極引出し用スリーブの変形例を示す断面図、
第9図は本考案に係わる半導体装置のさらに他の
実施例を示す断面図である。 11……導電性冷却板、12……半導体素子、
13……アノード電極、14……絶縁性外囲器、
15……板状蓋体、16……ボルト、17……環
状溝、18……弾性絶縁体、19,20……凹
部、21……絶縁部材、22……カソード電極、
23……電極体、23a……突出部、24……側
孔、25……カソード外部引出し電極、26……
絶縁板、26a……突出筒部、27……バネ、2
8……電極、29……金属、30……ネジ、31
……パツキン、32,33……間隙、34……ス
リーブ、35……パツキン、36……ヘツド部、
37……中空チユーブ、38……ゲートリード
(ベースリード)、39……ネジ山、40……ナツ
ト、41……中空部、42……チユーブ、43…
…カソード電極引出し用導電体、44……段部、
45……凹部、46……カソード電極、47……
ボルト。
FIG. 1 is a cross-sectional view of a conventional stud-type power semiconductor device, FIG. 2 is a cross-sectional view of a power semiconductor device according to the present invention, and FIGS. 3 and 4 are cross-sectional views of other embodiments of the present invention. A sectional view of a main part of a power semiconductor device, FIGS. 5 to 8 are sectional views showing modified examples of an electrode extraction sleeve used in the device of the present invention,
FIG. 9 is a sectional view showing still another embodiment of the semiconductor device according to the present invention. 11... Conductive cooling plate, 12... Semiconductor element,
13... Anode electrode, 14... Insulating envelope,
15... Plate-like lid, 16... Bolt, 17... Annular groove, 18... Elastic insulator, 19, 20... Recess, 21... Insulating member, 22... Cathode electrode,
23... Electrode body, 23a... Projection, 24... Side hole, 25... Cathode external extraction electrode, 26...
Insulating plate, 26a...Protruding cylindrical portion, 27...Spring, 2
8...Electrode, 29...Metal, 30...Screw, 31
... Packing, 32, 33... Gap, 34... Sleeve, 35... Packing, 36... Head part,
37...Hollow tube, 38...Gate lead (base lead), 39...Screw thread, 40...Nut, 41...Hollow part, 42...Tube, 43...
...Cathode electrode lead-out conductor, 44...Stepped portion,
45... recess, 46... cathode electrode, 47...
bolt.

Claims (1)

【実用新案登録請求の範囲】 (1) 導電性冷却板と、該冷却板の主面上に載置さ
れた半導体素子と、この半導体素子を囲繞する
ようにして上記冷却板上に配置され上下面が開
口するとともに、側壁に外部電極取出し用開口
部を有する絶縁性外囲器と、上記絶縁性外囲器
の上面を密閉する板状蓋体と、上記外囲器内に
装着され、上記半導体素子を、上記冷却板方向
に押圧するバネ体と、内方端部が上記半導体素
子上に電極体を介して載置され上記バネ体によ
り該半導体素子方向に押圧され、中間部が上記
絶縁性外囲器の側壁開口部を上下面に間隙を残
すようにして貫通し、外方端部が上記板状蓋体
上面の平面状態を実質的に害さないようにして
上記絶縁性外囲器から導出されている外部電極
と、上記冷却板および板状蓋体と上記絶縁性外
囲器とを相互に直接、気密に圧接させ固定する
手段と、外部電極取出し部と上記絶縁性外囲器
とを相互に直接、気密に圧接させ固定する手段
とを具備することを特徴とする電力用半導体装
置。 (2) 冷却板上に載置された半導体素子が互に絶縁
させて分離された複数個の半導体素子の組合せ
からなる実用新案登録請求の範囲第1項記載の
電力用半導体装置。 (3) 半導体素子上面にバネ体をガイドする突起が
設けられている実用新案登録請求の範囲第1ま
たは2項記載の電力用半導体装置。 (4) 板状蓋体は絶縁性が保たれている実用新案登
録請求の範囲第1,2または3項記載の電力用
半導体装置。 (5) 冷却板、板状蓋体および外部電極取出し部と
絶縁性外囲器とを気密に圧接固定する手段がボ
ルトによる圧締と、半導体素子設置部を囲繞す
るようにして各圧接部間に介在させた弾性体と
にたるものである実用新案登録請求の範囲第
1,2,3または4項記載の電力用半導体装
置。 (6) 当該導出された外部電極がカソード電極およ
びゲート電極(あるいはベース電極)である実
用新案登録請求の範囲第1,2,3,4または
5項記載の電力用半導体装置。 (7) 半導体素子収納部に活性度の小さいガスを封
入した実用新案登録請求の範囲第1,2,3,
4,5または6項記載の電力用半導体装置。
[Claims for Utility Model Registration] (1) An electrically conductive cooling plate, a semiconductor element placed on the main surface of the cooling plate, and a semiconductor element placed on the cooling plate so as to surround the semiconductor element. an insulating envelope having an open bottom surface and an opening for taking out an external electrode in a side wall; a plate-like lid body sealing the top surface of the insulating envelope; a spring body that presses the semiconductor element toward the cooling plate, an inner end portion of which is placed on the semiconductor element via an electrode body and is pressed toward the semiconductor element by the spring body, and an intermediate portion that presses the semiconductor element toward the cooling plate; The insulating envelope is penetrated through the side wall opening of the insulating envelope so as to leave a gap on the upper and lower surfaces, and the outer end portion does not substantially impair the planar state of the upper surface of the plate-shaped lid. an external electrode led out from the cooling plate, a means for directly and airtightly press and fix the cooling plate, the plate-shaped lid, and the insulating envelope to each other; and an external electrode extraction portion and the insulating envelope. and a means for directly and airtightly pressurizing and fixing the semiconductor device and the semiconductor device. (2) The power semiconductor device according to claim 1, which is a combination of a plurality of semiconductor elements placed on a cooling plate and separated by insulating them from each other. (3) The power semiconductor device according to claim 1 or 2, wherein a protrusion for guiding a spring body is provided on the upper surface of the semiconductor element. (4) The power semiconductor device according to claim 1, 2 or 3, wherein the plate-shaped lid maintains insulation properties. (5) The means for airtightly press-fixing the cooling plate, plate-shaped lid, external electrode extraction part, and insulating envelope are by means of bolts, and by means of clamping between each pressure-welded part so as to surround the semiconductor element installation part. A power semiconductor device according to claim 1, 2, 3, or 4, which is a device comprising an elastic body interposed in the semiconductor device. (6) The power semiconductor device according to claim 1, 2, 3, 4 or 5, wherein the derived external electrodes are a cathode electrode and a gate electrode (or base electrode). (7) Claims 1, 2, 3, and 3 for utility model registration in which a gas with low activity is sealed in a semiconductor element housing part
The power semiconductor device according to item 4, 5 or 6.
JP17034181U 1981-11-16 1981-11-16 Expired JPS6218050Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17034181U JPS6218050Y2 (en) 1981-11-16 1981-11-16

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17034181U JPS6218050Y2 (en) 1981-11-16 1981-11-16

Publications (2)

Publication Number Publication Date
JPS57181040U JPS57181040U (en) 1982-11-17
JPS6218050Y2 true JPS6218050Y2 (en) 1987-05-09

Family

ID=29962305

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17034181U Expired JPS6218050Y2 (en) 1981-11-16 1981-11-16

Country Status (1)

Country Link
JP (1) JPS6218050Y2 (en)

Also Published As

Publication number Publication date
JPS57181040U (en) 1982-11-17

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