JPS62173612A - Thin film magnetic head - Google Patents
Thin film magnetic headInfo
- Publication number
- JPS62173612A JPS62173612A JP1623086A JP1623086A JPS62173612A JP S62173612 A JPS62173612 A JP S62173612A JP 1623086 A JP1623086 A JP 1623086A JP 1623086 A JP1623086 A JP 1623086A JP S62173612 A JPS62173612 A JP S62173612A
- Authority
- JP
- Japan
- Prior art keywords
- head
- insulator
- film
- magnetic
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 22
- 239000012212 insulator Substances 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 9
- 239000004020 conductor Substances 0.000 claims description 26
- 239000010408 film Substances 0.000 claims description 23
- 229920001721 polyimide Polymers 0.000 claims description 12
- 239000009719 polyimide resin Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract description 27
- 239000000696 magnetic material Substances 0.000 abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052681 coesite Inorganic materials 0.000 abstract description 7
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000000377 silicon dioxide Substances 0.000 abstract description 7
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 7
- 229910052682 stishovite Inorganic materials 0.000 abstract description 7
- 229910052905 tridymite Inorganic materials 0.000 abstract description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 6
- 238000009413 insulation Methods 0.000 abstract description 6
- 229910052593 corundum Inorganic materials 0.000 abstract description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000010292 electrical insulation Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 3
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、薄膜磁気ヘッドに関し、特に優れた電気絶縁
耐圧特性を備えた薄膜磁気ヘッドに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a thin film magnetic head, and particularly to a thin film magnetic head having excellent electrical insulation breakdown characteristics.
薄膜磁気ヘッドは、本質的に高密度記録に適しているた
め、磁気ディスク装置の記録再生ヘッドとして多用され
ている。第2図は、従来の薄膜磁気ヘッドの先端部の断
面図である。一般に、薄膜磁気ヘッドは、第2図に示す
ように、セラミックス等の基板兼スライダ材1と、その
上に被着されたA12 o3等の絶縁体2上に、下部磁
性体3゜絶縁材のギャップ材4.導体コイル6およびそ
の下地絶縁体5.ならびにコイル上の絶縁体7.さらに
上部磁性体8が積層されて、トランスデユーサ部を形成
しており、最後に、Al2O3等の保護膜9により密閉
される。Thin-film magnetic heads are inherently suitable for high-density recording, and are therefore widely used as recording/reproducing heads in magnetic disk drives. FIG. 2 is a sectional view of the tip of a conventional thin film magnetic head. In general, a thin film magnetic head consists of a substrate/slider material 1 made of ceramics or the like, an insulator 2 made of A12O3 or the like deposited thereon, and a lower magnetic material 3° insulating material. Gap material 4. Conductor coil 6 and its base insulator 5. and insulator 7 on the coil. Further, an upper magnetic body 8 is laminated to form a transducer section, and finally, it is sealed with a protective film 9 made of Al2O3 or the like.
このような薄膜磁気ヘッドを製造・使用する上で、コイ
ルの電気絶縁性は重要な問題である。In manufacturing and using such thin film magnetic heads, the electrical insulation of the coil is an important issue.
これは、薄膜磁気ヘッドの絶縁体の経時変化等による絶
縁性能の低下、あるいは、静電気の放電による絶縁体の
破壊や疑似破壊による絶縁性能の低下等が生じた場合、
薄膜磁気ヘッド内のあらかじめ設定された導電路以外に
電流が漏れ、充分な記録再生が出来なくなったり、漏れ
電流によりヘッド構成部の一部や、ヘッドに対向する記
録媒体に損害を与えてしまうからである。This may occur if the insulation performance of the thin-film magnetic head deteriorates due to changes over time, or if the insulation performance deteriorates due to breakdown or pseudo-destruction of the insulator due to electrostatic discharge.
If current leaks outside of the pre-set conductive paths within the thin-film magnetic head, sufficient recording and playback may not be possible, or leakage current may damage some parts of the head component or the recording medium facing the head. It is.
経時変化等による絶越性能の低下は、一般的に、信願性
の高いM縁体を使用したり、・\ソドを保護服で密閉す
ることで防止さ、fする。Deterioration in absolute performance due to changes over time can generally be prevented by using a highly reliable M-type body or by sealing the body with protective clothing.
静電気の放電に対しては、ヘッド製造中にむける作業員
の接地、ヘッドの運搬・貯蔵容器の材質を限定する等、
ヘッドの使用中においては、装置の筐体を接地する等の
対策を行うが充分ではない。To prevent static electricity discharge, take measures such as grounding workers during head manufacturing and limiting the materials used for head transportation and storage containers.
While the head is in use, countermeasures such as grounding the device casing are taken, but these are not sufficient.
薄膜磁気ヘッドに静電気の放電が生じた場合、ヘッド表
面に露出している導電性の部材すなわち第2図における
磁性体3,8の媒体対向部11゜または導体コイル6に
接続される図示しない入出力端子パッドの一方に高電位
が加わり、磁性体3゜8ど4体コイル6の間の絶縁体4
,5.7を介して、他の一方の導電性の部材へ放電が生
じる。When electrostatic discharge occurs in the thin film magnetic head, the conductive member exposed on the head surface, that is, the medium facing portion 11° of the magnetic bodies 3 and 8 in FIG. A high potential is applied to one of the output terminal pads, and the insulator 4 between the magnetic material 3°8 and the 4-piece coil 6
, 5.7, a discharge occurs to the other conductive member.
放電が生じると、絶椋体4,5.7のうち一つは「絶縁
破壊」あるいは、「疑似破壊」となり、「絶縁破壊」の
場合には、放電時に流れる大電流のため、電流容量の小
さな部分すなわち、磁性体の媒体対向部11が焼損する
ことが判明した。また、「疑似破壊」状態の場合には、
数回放電がくり返されるうちに「絶縁破壊」状態となり
、上記と同様の焼損状態となる。このような現象が製造
中に生じた場合には、後工程の検査により検出すること
が可能であるが、検査漏れとなった場合や、使用中に前
述の現象が生じた場合には、磁気ヘッドが損害を受ける
ばかりでなく、ヘッドの磁性体先端部IIと媒体面との
間で放電が起こり、媒体にまで損害を与えてしまうこと
になる。When a discharge occurs, one of the resistors 4, 5.7 undergoes "insulation breakdown" or "pseudo breakdown", and in the case of "insulation breakdown", the current capacity decreases due to the large current flowing during discharge. It was found that a small portion, ie, the medium facing portion 11 of the magnetic material, was burnt out. In addition, in the case of "pseudo-destruction" state,
After the discharge is repeated several times, a "dielectric breakdown" state occurs, resulting in a burnout state similar to the above. If such a phenomenon occurs during manufacturing, it can be detected through post-process inspection, but if inspection is omitted or the above phenomenon occurs during use, magnetic Not only will the head be damaged, but a discharge will occur between the magnetic body tip II of the head and the medium surface, and the medium will also be damaged.
このような問題を改善する方法として、静電荷放電が下
部磁性体3の先端で起きないように、別の放電路を形成
する方法(特開昭57−6431号公報参照)がある。As a method for improving such a problem, there is a method of forming another discharge path so that electrostatic charge discharge does not occur at the tip of the lower magnetic body 3 (see Japanese Patent Laid-Open No. 57-6431).
これは、導電性スライダと心電性放電路間において放電
させ、トランスデユーサ部に損害を与えないようにする
方法である。This is a method in which a discharge is caused between the conductive slider and the electrocardial discharge path so as not to damage the transducer section.
しかし、この方法は、導電性スライダ(例えば、特開昭
55−163665号公報に記載されているスライダ参
照)に対して有効であるが、非導電性スライダに対して
は効果がない。また、導電性スライダの場合でも、導電
性スライダと放電路間に放電が発生し、さらに放電が繰
り返されたときには、スライダと放電路間の電気絶縁性
能が劣化し、導電路が形成されて、ヘッド使用中に記録
電流がスライダ側に漏れてしまうため、十分な電流がト
ランスデユーサ部に供給されない場合がある。However, although this method is effective for conductive sliders (for example, see the slider described in Japanese Patent Application Laid-Open No. 55-163665), it is not effective for non-conductive sliders. In addition, even in the case of a conductive slider, when discharge occurs between the conductive slider and the discharge path, and the discharge is repeated, the electrical insulation performance between the slider and the discharge path deteriorates, and a conductive path is formed. Since recording current leaks to the slider side while the head is in use, sufficient current may not be supplied to the transducer section.
本発明の目的は、このような従来の問題を改善し、優れ
た電気絶縁耐圧特性を備え、ヘッド製造中や使用中に絶
縁破壊が生じることなく、高信頼性を有する薄膜磁気ヘ
ッドを堤供することにある。The purpose of the present invention is to improve such conventional problems and to provide a thin film magnetic head that has excellent electrical insulation voltage characteristics, does not cause dielectric breakdown during head manufacture or use, and has high reliability. There is a particular thing.
」ユ、?L!目的を達成するため1本発明の薄膜磁気ヘ
ッドは、基板上に下部磁性体とギャップ材と導体コイル
と上部磁性体とを形成し、かつ導体コイルと上、下部磁
性体の間の絶縁体として、焼成したフォトレジスト膜、
ポリイミド系樹脂膜、SiO2膜、A12031摸ある
いはこれらの組合せを用いた薄膜磁気ヘッドにおいて、
上記導体コイルと上、下部磁性体との間の絶縁体の占め
る間隙の寸法を、約1μm以上にしたことに特徴がある
。"Yu,? L! In order to achieve the object, the thin film magnetic head of the present invention includes a lower magnetic material, a gap material, a conductor coil, and an upper magnetic material formed on a substrate, and an insulator between the conductive coil and the upper and lower magnetic materials. , fired photoresist film,
In a thin film magnetic head using a polyimide resin film, SiO2 film, A12031 model, or a combination thereof,
The present invention is characterized in that the size of the gap occupied by the insulator between the conductor coil and the upper and lower magnetic bodies is approximately 1 μm or more.
以下1本発明の実施例を、図面により詳細に説明する。 EMBODIMENT OF THE INVENTION Below, one embodiment of the present invention will be described in detail with reference to the drawings.
第1図は、本発明の一実施例を示す薄膜磁気ヘッドの絶
縁破壊耐圧の特性図であり、第3図および第4図は、実
際に薄膜ヘッドを作製し、ヘッドを装置に組み込んで、
動作試験を行った場合に、破壊した不良ヘッドと破壊し
なかった良品の解析結果を示す図である。なお、第3図
、第4図の番号は、サンプル番号であって、破壊したサ
ンプル番号1〜4のヘッドについて、絶縁体寸法を41
す足したところ、それぞれ0.3,0.5,0゜6.0
.7であったことが示されている。FIG. 1 is a characteristic diagram of dielectric breakdown voltage of a thin film magnetic head showing an embodiment of the present invention, and FIGS.
FIG. 7 is a diagram showing analysis results of defective heads that were destroyed and non-defective heads that were not destroyed when an operation test was performed. Note that the numbers in Figures 3 and 4 are sample numbers, and for the heads of sample numbers 1 to 4 that were destroyed, the insulator dimensions were set to 41.
When added, the results are 0.3, 0.5, and 0°6.0, respectively.
.. It is shown that it was 7.
第4図においては、絶縁破壊を起こさなかったヘッドに
ついて、試験後、コンデンサの充放電により磁性体と導
体コイル間に電圧を印加し、破壊された電圧、つまり絶
縁耐圧を調査して、その規格化した絶縁耐圧を示してい
る。すなわち、破壊されなかったサンプル1〜5のヘッ
ドについて、無理に破壊したときの電圧がそれぞれ1.
05゜1.20,1.25,1.20,1.30であり
、そのときの絶縁体の間隙寸法は0.9,1.0,1゜
1,1.1,1.1であったことが示されている。In Figure 4, for the head that did not cause dielectric breakdown, after the test, a voltage was applied between the magnetic material and the conductive coil by charging and discharging the capacitor, and the voltage at which the breakdown occurred, that is, the dielectric strength voltage, was investigated and the specifications This shows the dielectric strength voltage. That is, for the heads of Samples 1 to 5 that were not destroyed, the voltage when they were forcibly destroyed was 1.
05°1.20, 1.25, 1.20, 1.30, and the gap dimensions of the insulator at that time were 0.9, 1.0, 1°1, 1.1, 1.1. It has been shown that
なお、供試ヘッドの絶縁体は、上部磁性体8と導体コイ
ル6の間の絶縁体7がポリイミド系樹脂、下部磁性体3
と導体コイル6の間の絶縁体5がボ“□ リ
イミド系樹脂、またギャップ材(絶縁体)4は。The insulators of the test head were such that the insulator 7 between the upper magnetic body 8 and the conductor coil 6 was made of polyimide resin, and the lower magnetic body 3 was made of polyimide resin.
The insulator 5 between the conductor coil 6 and the conductor coil 6 is made of polyimide resin, and the gap material (insulator) 4 is made of polyimide resin.
アルミナである。It is alumina.
第1図においては、上記コンデンサ充放電による絶縁破
壊耐圧(規格化)と、磁性体3,8と導体コイル6間の
絶縁体5,7の占める間隙の寸法との関係を示している
。第1図における■は、上記第4図における供試ヘッド
と同じポリイミド系樹脂を使用したヘッドである。第1
図における曲線2(Dと、第3図、第4図の結果より、
規格化された絶縁破壊耐圧1.0に対応する間隙の寸法
が、絶縁破壊発生の臨界点となる。また、曲線■は、磁
性体3,8と導体コイル6間に)第1・レジストを焼成
して得られる絶縁体5,7を用いたヘッドの絶縁耐圧に
対して、磁性体3,8と導体コイル6間の絶縁体5,7
の占める間隙寸法の関係を示す。FIG. 1 shows the relationship between the dielectric breakdown voltage (normalized) due to the charging and discharging of the capacitor and the size of the gap occupied by the insulators 5 and 7 between the magnetic bodies 3 and 8 and the conductor coil 6. 1 in FIG. 1 is a head using the same polyimide resin as the test head in FIG. 4 above. 1st
From curve 2 (D) in the figure and the results of Figures 3 and 4,
The dimension of the gap corresponding to the standardized dielectric breakdown voltage of 1.0 becomes the critical point for dielectric breakdown to occur. In addition, the curve (2) shows the dielectric strength of the head using the insulators 5, 7 obtained by firing the first resist (between the magnetic materials 3, 8 and the conductor coil 6). Insulators 5 and 7 between conductor coils 6
The relationship between the gap size occupied by is shown.
また、曲線■は、磁性体3,8と導体コイル6間にAl
2O3の絶縁体を用いた場合、曲線■は、磁性体3,8
と導体コイル6間にSiO2膜の絶縁体を用いた場合を
、それぞれ示している。In addition, the curve (■) indicates that the Al
When a 2O3 insulator is used, the curve ■ is a magnetic material 3,8
The case where an insulator of SiO2 film is used between the conductor coil 6 and the conductor coil 6 is shown.
本実施例の薄膜磁気ヘッドは、スライダ材の導電性の有
無によらず、導体コイル6と磁性体3゜8間の絶縁体に
絶縁破壊が発生することがない寸法に設定することによ
り、磁性体3,8の先端部の焼損による損害やヘッドに
対向する媒体の損害を防止する。第3図より、絶縁破壊
がどの程度の絶縁体寸法で発生するかを知ることができ
る。そして、第1図より、規格化した絶縁破壊耐圧1゜
0を越えるように対応する間隙寸法を選ぶことにより、
絶縁破壊の発生しない薄膜磁気ヘッドを得ることができ
る。The thin-film magnetic head of this embodiment has magnetic properties by setting the dimensions so that dielectric breakdown does not occur in the insulator between the conductor coil 6 and the magnetic body 3°8, regardless of whether the slider material is conductive or not. This prevents damage due to burnout of the tips of the bodies 3 and 8 and damage to the medium facing the head. From FIG. 3, it can be seen at what size of the insulator the dielectric breakdown occurs. Then, from Figure 1, by selecting the corresponding gap size so that the standardized dielectric breakdown voltage exceeds 1°0,
A thin film magnetic head without dielectric breakdown can be obtained.
次に、薄膜磁気ヘッドとして、好適な構造を説明する。Next, a suitable structure for the thin film magnetic head will be explained.
実験例1:磁性体3,8と導体コイル6間の絶縁体5,
7として、焼成したフォトレジスト、あるいはA12
o3膜、あるいはAl2O3膜と焼成したフォトレジス
トの2層、またはSiO2膜、あるいは5i02膜と焼
成したフォトレジストの2層を、それぞれ磁性体3,8
と導体コイル6間の絶縁体として用い、磁性体3,8と
導体コイル6間の間隙寸法を1μrn以上としてヘッド
を構成した。Experimental example 1: Insulator 5 between magnetic bodies 3 and 8 and conductor coil 6,
7, baked photoresist or A12
o3 film, or two layers of Al2O3 film and fired photoresist, or two layers of SiO2 film, or 5i02 film and fired photoresist, respectively, with magnetic materials 3 and 8.
and the conductor coil 6, and the head was constructed with a gap size of 1 μrn or more between the magnetic bodies 3, 8 and the conductor coil 6.
実験例2:ポリイミド系樹脂、あるいはAl2O3膜、
あるいはポリイミド系樹脂とA12 o3膜の2層、ま
たはSiO2膜、あるいは5i02膜とポリイミド系樹
脂の2層を、それぞれ磁性体3゜8と導体コイル6間の
絶縁体として用い、間隙寸法を1μm以上としてヘッド
を構成した。Experimental example 2: Polyimide resin or Al2O3 film,
Alternatively, two layers of polyimide resin and A12O3 film, or SiO2 film, or two layers of 5i02 film and polyimide resin are used as insulators between the magnetic material 3°8 and the conductor coil 6, and the gap size is 1 μm or more. The head was constructed as follows.
なお、上述した絶縁膜は、ピンホールや、膜中の微小な
4電性異物等により絶縁破壊耐圧にバラツキが生じ、さ
らに高信頼の要求されるヘッドに対しては、安全性も含
めて、上記実施例の約1゜5倍程度以上の絶縁体寸法と
することにより、より信頼性の高いヘッドが得られた。Note that the above-mentioned insulating film has variations in dielectric breakdown voltage due to pinholes, minute quadrielectric foreign matter in the film, etc., and for heads that require high reliability, it is necessary to By making the insulator dimension approximately 1.5 times larger than that of the above embodiment, a more reliable head was obtained.
また、ピンホールを低減するため、上記実施例の絶縁体
であるフォi・レジス1−、ポリイミド系樹脂を2回以
上に分けて塗布した後、所定の形状にパターニング。In addition, in order to reduce pinholes, the insulator Foi-Res 1- and polyimide resin of the above example were applied in two or more times, and then patterned into a predetermined shape.
ベークした絶縁体を薄膜磁気ヘッドに用いたところ、絶
縁破壊耐圧のバラツキを低減することができた。When the baked insulator was used in a thin-film magnetic head, it was possible to reduce variations in dielectric breakdown voltage.
実験例3:実験例1.実験例2において、磁性体3.8
と導体コイル6間の絶縁体5,7の占める間隙を、はぼ
1.5μm以上にしてヘッドを構成した。Experimental example 3: Experimental example 1. In Experimental Example 2, the magnetic material was 3.8
The head was configured such that the gap occupied by the insulators 5 and 7 between the conductor coil 6 and the conductor coil 6 was approximately 1.5 μm or more.
実験例4:実験例1.実験例2において、絶縁体5.7
として用いたフォトレジスト、またはポリイミド系樹脂
を各々2回以上に分けて塗布して得られる絶縁体を用い
、磁性体3,8と導体コイル6間の絶縁体寸法をほぼ1
μm以上にしてヘッドを構成した。Experimental example 4: Experimental example 1. In Experimental Example 2, the insulator was 5.7
Using an insulator obtained by applying photoresist used as
The head was configured to have a diameter of μm or more.
実験例5:実験例4において、磁性体3,8と導体コイ
ル6間の絶縁体寸法をほぼ1.5μm以上にしてヘッド
を構成した。Experimental Example 5: In Experimental Example 4, the head was configured so that the insulator size between the magnetic bodies 3 and 8 and the conductor coil 6 was approximately 1.5 μm or more.
以上の実験例は、薄膜磁気ヘッドを説明する上で、第2
図に示したように、導体コイル6が1層のものを前提に
しているが、導体コイル6が多層となっても、何等制約
を受けるものではない。The above experimental example is the second example in explaining the thin film magnetic head.
As shown in the figure, it is assumed that the conductor coil 6 has one layer, but there are no restrictions whatsoever even if the conductor coil 6 has multiple layers.
このように、本実施例では、磁性体3,8と導体コイル
6間の絶縁体5,7として、ポリイミド系樹脂を用いた
ヘット■、5102膜を使用いたヘットくの、Al2O
3膜を用いたヘッド■、SiO2膜を用いたヘッド(優
に対して、絶縁体の占める間隙寸法を第3図に示すよう
に、それぞれ0,3゜0.5,0.6,0.7にした場
合には、絶縁破壊が起きてしまい、第4図に示すように
、それぞれ0.9,1.0,1.l、1.1にした場合
には、破壊されなかった。このように、磁性体3,8と
導体コイル6間の絶縁体寸法は、はぼ1.0μm以上な
ら絶縁破壊されないが、バラツキを考えると、1.5μ
m以上にすることが望ましい。As described above, in this embodiment, as the insulators 5 and 7 between the magnetic bodies 3 and 8 and the conductor coil 6, the head 1 made of polyimide resin, the head 1 made of 5102 film, and the head 1 made of Al2O
As shown in Figure 3, the gap dimensions occupied by the insulator are 0.3°, 0.5°, 0.6°, and 0.3° for the head (2) using three films and the head (excellent) using SiO2 film, respectively. When the value was set to 7, dielectric breakdown occurred, but as shown in Figure 4, no breakdown occurred when the values were set to 0.9, 1.0, 1.l, and 1.1, respectively. As shown, if the insulator dimension between the magnetic materials 3 and 8 and the conductor coil 6 is approximately 1.0 μm or more, dielectric breakdown will not occur, but considering the variation, 1.5 μm or more.
It is desirable to make it more than m.
以上説明したように、本発明によれば、磁性体と導体コ
イル間の絶縁体の占める間隙寸法を約l。As explained above, according to the present invention, the gap size occupied by the insulator between the magnetic material and the conductive coil is approximately l.
0μm以上にしたので、ヘッドの製造中および使用中に
絶縁破壊が生じることがなく、高信頼性を有するヘッド
を得ることができ、良品率も向上する。Since the thickness is set to 0 μm or more, dielectric breakdown does not occur during the manufacture and use of the head, making it possible to obtain a highly reliable head and improving the yield rate.
第1図は本発明の一実施例を示す絶縁体の占める間隙寸
法と絶縁破壊耐圧の関係図、第2図は本発明が適用され
る薄膜磁気ヘッドの先端部の断面図、第3図、第4図は
それぞれ薄1漠ヘッドの実験による絶縁破壊の解析結果
を示す図である。
lニスライダ、2:絶縁層、3,8:磁性体、4:ギャ
ップ材、5,7:絶縁体、6:4体コイル、9:保護膜
、10:媒体対向面、11:磁性体先端部。
特許出願人 株式会社日立製作所
−“
代理人弁理士磯村雅俊’t、”l
第 1 図
第 2 図
第 3 図
第牛図FIG. 1 is a diagram showing the relationship between the gap size occupied by an insulator and dielectric breakdown voltage according to an embodiment of the present invention, FIG. 2 is a sectional view of the tip of a thin film magnetic head to which the present invention is applied, and FIG. FIG. 4 is a diagram showing the results of an analysis of dielectric breakdown obtained through experiments using thin and thin heads. l varnish slider, 2: insulating layer, 3, 8: magnetic material, 4: gap material, 5, 7: insulator, 6: 4-body coil, 9: protective film, 10: medium facing surface, 11: magnetic material tip . Patent Applicant: Hitachi, Ltd. - “Representative Patent Attorney Masatoshi Isomura't,” Figure 1 Figure 2 Figure 3 Figure 3 Cow Diagram
Claims (1)
上部磁性体とを形成し、かつ導体コイルと上、下部磁性
体の間の絶縁体として、焼成したフォトレジスト膜、ポ
リイミド系樹脂膜、SiO_2膜、Al_2O_3膜あ
るいはこれらの組合せを用いた薄膜磁気ヘッドにおいて
、上記導体コイルと上、下部磁性体との間の絶縁体の占
める間隙の寸法を、約1μm以上にしたことを特徴とす
る薄膜磁気ヘッド。(1) A lower magnetic body, a gap material, a conductor coil, and an upper magnetic body are formed on the substrate, and a fired photoresist film or a polyimide resin film is used as an insulator between the conductor coil and the upper and lower magnetic bodies. , a thin film magnetic head using a SiO_2 film, an Al_2O_3 film, or a combination thereof, characterized in that the dimension of the gap occupied by the insulator between the conductor coil and the upper and lower magnetic bodies is approximately 1 μm or more. Thin film magnetic head.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1623086A JPS62173612A (en) | 1986-01-27 | 1986-01-27 | Thin film magnetic head |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1623086A JPS62173612A (en) | 1986-01-27 | 1986-01-27 | Thin film magnetic head |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62173612A true JPS62173612A (en) | 1987-07-30 |
Family
ID=11910745
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1623086A Pending JPS62173612A (en) | 1986-01-27 | 1986-01-27 | Thin film magnetic head |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62173612A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6859997B1 (en) * | 2000-09-19 | 2005-03-01 | Western Digital (Fremont), Inc. | Method for manufacturing a magnetic write element |
-
1986
- 1986-01-27 JP JP1623086A patent/JPS62173612A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6859997B1 (en) * | 2000-09-19 | 2005-03-01 | Western Digital (Fremont), Inc. | Method for manufacturing a magnetic write element |
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