JPS62167876A - Sputtering apparatus - Google Patents

Abstract

PURPOSE:To form a high quality thin film free from defects by placing a substrate for deposition in an auxiliary vacuum chamber installed in a main vacuum chamber and having a higher degree of vacuum than the main vacuum chamber and by colliding particles in plasma against the substrate by the pressure difference between the chambers. CONSTITUTION:A substrate 7 for deposition is placed in an auxiliary vacuum chamber 5 installed in a main vacuum chamber 1 and having a higher degree of vacuum than the chamber 1 by <=10<-2>Torr. The part of the auxiliary vacuum chamber 5 confronting a target electrode 4 placed in the main vacuum chamber 1 is used as an electrode (counter electrode) 5a so that a pair of electrodes 4, 5a are formed. A hole 6 through which the main vacuum chamber 1 communicates with the auxiliary vacuum chamber 5 is pierced in the electrode 5a.

Description

[Detailed description of the invention] A. Industrial application field The present invention relates to a sputtering device.

B6 Summary of the Invention The present invention provides a pair of ? In a sputtering apparatus equipped with an i-electrode, an auxiliary vacuum chamber is provided in the main vacuum chamber that also serves as one electrode and has a higher vacuum than the main vacuum chamber. It is possible to obtain high-quality iv@ with extremely few defects by colliding the particles with the deposition substrate using the differential pressure with the FC cavity.

C0 Conventional technology Conventionally, sputtering equipment applies a voltage such as a high voltage between a pair of electrodes, places the deposition substrate at one α pole and exposes it directly to plasma, and deposits ions etc. in the 7z field. The structure was such that the film was formed by colliding with the substrate. Regarding the formation of diamond-like carbon thin films, there is a paper by Dr. Eisenberg et al. entitled "Ion Beam Thin Film Formation of Diamond Carbon # Films J" (Journal No. Op Applied Physics, Vol. 42, No. 7, 1971, No. 2953-- 2958 pages)
As disclosed in 2003, an ion accelerating electrode is provided in addition to a normal discharge electrode, and carbon ions in a high-velocity, high-energy state collide with the deposition substrate to generate hard diamond-like H
I was getting @.

Problems to be solved by the D0 invention However, in conventional sputtering equipment,
When the deposition substrate was directly exposed to plasma], the resulting thin film was locally damaged and had many defects because ions and the like collided with the deposition substrate due to the electric field. In addition, Mr. Eisenberg's ion beam sputtering equipment is complicated because it is equipped with ion accelerating electrodes, power supplies, etc., and the problem is that the ion bombardment of carbon ions and argon ions increases the number of defects in the thin film. was there.

On the other hand, in order to prevent the adverse effects of ion attrs, etc., there are known devices in which a metal mesh is placed between the deposition substrate and the discharge plasma, and a positive electric field is applied or the device is grounded. There is.

According to such an apparatus, although the film formation rate is somewhat slow, defects in the thin film are significantly improved. However, with this device,
For example, when forming an amorphous silicon thin film,
It is not possible to obtain a thin film with good characteristics, and when an amorphous carbon thin film is formed, the hydrogen content becomes large.

The reason why the hydrogen content increases is thought to be because neutral particles react with hydrogen, which is an atmospheric gas, and polymerization progresses.In order to suppress this phenomenon, when the deposition substrate and metal mesh are brought close to the plasma, Furthermore, the plasma resulted in a thin film with many defects.

Means for Solving the E0 Problem In order to solve the above-mentioned conventional problems, the present invention provides a sputtering apparatus in which a pair of electrodes facing each other is provided in a full chamber, in which the vacuum chamber is used as a main vacuum chamber. , a high A in its main 2! In addition to providing an auxiliary vacuum chamber, a portion of the auxiliary vacuum chamber opposite to at least one electrode is used as the other electrode, and a communication hole is formed in the other electrode to communicate the main X cavity and the auxiliary vacuum chamber. , m-sized substrates are placed in an auxiliary vacuum chamber.

If the pressure in the auxiliary vacuum chamber exceeds the pressure in the main vacuum chamber by 10%, the pressure difference between the auxiliary vacuum chamber and the main vacuum chamber will not be sufficient.
The film formation rate becomes slow and a high-quality '# film cannot be obtained. In addition, it is practically impossible to set the pressure in the auxiliary vacuum chamber to less than 10 degrees lower than the pressure in the main vacuum chamber. That is, the pressure in the auxiliary vacuum chamber is PI, and the pressure in the main vacuum chamber is P.
2, Pt==P2X10 ~10 1)" is preferable.

10. In the sputtering apparatus having the above configuration, particles in the plasma are introduced into the auxiliary JIC nitrogen chamber through the communication hole due to the pressure difference between the main X cavity and the auxiliary vacuum chamber, and collide with the deposition substrate, forming a thin film. is formed. Since the energy of the particles is small, there is almost no impact on the deposition substrate and thin film, and since the deposition substrate can be placed close to the plasma, for example, in the case of diamond-like carbon thin film formation, the particles are has a long mean free path, and unpolymerized carbon particles (at most 1 to 3 carbon particles) from the plasma can reach the deposition substrate without causing a hydrogen addition reaction.

G. Embodiment F1 The present invention will be explained in detail based on an embodiment shown in the drawings.

Example 1 Diagram Planar type according to the present invention! 1 is a schematic configuration diagram of a Dunnetron sputtering apparatus, in which a main vacuum chamber 1 is connected to an atmospheric gas introduction pipe 2 and an exhaust pipe 3. Furthermore, a graphite disk target electrode 4 with a diameter of 75 mm is provided in the main vacuum chamber 1.
It is connected to a high frequency power source (not shown) provided outside the main vacuum chamber 1. Further, within the main vacuum chamber 1, an auxiliary vacuum chamber 5 is provided, which is a cylindrical counter electrode with a bottom facing the target electrode 4.

A communication hole 6, which is a small hole of about 0.2 mφ, is bored in the center of the opposing surface 5a of the target electrode 4 in the auxiliary vacuum chamber 5, which communicates the main vacuum chamber 1 and the auxiliary vacuum chamber 5. There is. Further, in the auxiliary vacuum chamber 5, a deposition substrate 7 made of silicon single crystal, quartz glass, gold-deposited glass, or the like is placed facing the target electrode 4. Auxiliary vacuum chamber 5
An exhaust pipe 8 for evacuating the inside of the auxiliary vacuum chamber 5 to a high level is connected to the wall surface of the main vacuum chamber 1 corresponding to the ceiling surface of the main vacuum chamber 1 . In this example, the distance between the target electrode 4 and the facing surface 5a of the auxiliary vacuum chamber 5 was approximately 20 cm, and the distance from the communication hole 6 to the deposition substrate 7 was approximately 10 cm.

In the sputtering apparatus having such a configuration, the main vacuum chamber 1
in advance at 13.3 μPa (l x 10 Torr)
After evacuating to a vacuum state of
) was held. On the other hand, the auxiliary vacuum chamber 5 is 66.7
Sputtering was performed for 2 hours by maintaining a high vacuum state of μPa (5×lOTorr) and supplying high frequency power of 13.56 Mtlz at an anode voltage of 2 KV. Note that the power supplied at this time was 300 W, and the anode current was 0.2.

All of the nine thin films obtained in this manner were colorless and transparent, and no absorption due to C-H was observed in the measurement of infrared absorption spectra. In addition, the defect density in the thin film was reduced to about 115 to 1/1O of the thin film produced by the conventional method. Furthermore, the nine-thin model obtained according to this example has a specific resistance of 10
It has a high insulation tw of Ω·F or more, and the hardness measured with a micro Vickers hardness tester showed a value of 2000 Kf/- or more. Then, ultraviolet light (for example, H@-Cd laser 3
25 nm), sifodoluminescence was observed.

Example 2 Sputtering was performed under the same conditions as in Example 1 except that the atmosphere gas was argon.

As a result of step 7, the obtained thin film was pale yellow and transparent, the defect density was reduced to 1/10 to 1/100 of that of the thin film made by the conventional method, and the specific resistance was 10 Ω・3 or more, which was measured by a micro Vickers hardness meter. Hardness measurements showed a value of 3000 Kf/M or more.9.

H0 Effects of the invention As described above, according to the sputtering apparatus of the invention,
An auxiliary vacuum chamber with a pressure higher than that of the main vacuum chamber 9 is provided in the main vacuum chamber, and the ICC deposition fund is placed in this auxiliary vacuum chamber, and the particles are collected by the differential pressure between the main vacuum chamber 9 and the auxiliary chamber 22. Since the sputtering is performed against the laminated substrate, the deposited substrate is not directly exposed to plasma, and the energy of the particles is small, so it is possible to obtain high quality R1 with extremely few defects, and it can be used as an electronic device. I can do it.

Furthermore, the apparatus of the present invention has a simpler structure than the ion beam sputtering apparatus of Eisenberg et al.

[Brief explanation of drawings]

The figure is a schematic diagram showing an embodiment of the sputtering apparatus of the present invention. l...Main insult, 4...Target electrode, 5...
Auxiliary vacuum chamber (counter electrode), 6... communicating hole, 7... deposition substrate.

Claims (1)

[Claims] (1) In a sputtering apparatus comprising a pair of electrodes facing each other in a vacuum chamber, the vacuum chamber is a main vacuum chamber, and a high vacuum of 10^-^2 or less than the pressure of the main vacuum chamber is provided in the main vacuum chamber. At the same time, a portion of the auxiliary vacuum chamber opposite to at least one electrode is used as the other electrode, a communication hole is formed in the other electrode to communicate the main vacuum chamber and the auxiliary vacuum chamber, and the auxiliary vacuum chamber is A sputtering device characterized in that a deposition substrate is placed in a vacuum chamber.