JPS62159031A - Measuring device for fine structure of extended x-ray absorption edge - Google Patents
Measuring device for fine structure of extended x-ray absorption edgeInfo
- Publication number
- JPS62159031A JPS62159031A JP61000233A JP23386A JPS62159031A JP S62159031 A JPS62159031 A JP S62159031A JP 61000233 A JP61000233 A JP 61000233A JP 23386 A JP23386 A JP 23386A JP S62159031 A JPS62159031 A JP S62159031A
- Authority
- JP
- Japan
- Prior art keywords
- ray
- sample
- rays
- incident
- total reflection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
- G01N23/06—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption
- G01N23/083—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption the radiation being X-rays
- G01N23/085—X-ray absorption fine structure [XAFS], e.g. extended XAFS [EXAFS]
Landscapes
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の利用分野〕 本発明は、拡張Ｘ線吸収端微細構造（以下。[Detailed description of the invention] [Field of application of the invention] The present invention relates to an extended X-ray absorption edge fine structure (hereinafter referred to as "extended X-ray absorption edge fine structure").
ｒＥＸＡＦｓ」という）測定装置に係り、特にＥＸＡＦ
Ｓを高精度で測定でき、構造解析研究用設備に好適なＥ
ＸＡＦＳ測定装置に関する。rEXAFs) measurement equipment, especially EXAF
E can measure S with high precision and is suitable for structural analysis research equipment.
This invention relates to an XAFS measurement device.
従来のＥＸＡＦＳ測定装置は「真空第２６巻第３号（１
９８３）大柳宏之・太田俊明Ｊ著によるｒＥ ＸＡ Ｆ
Ｓおよび表面ＥＸＡＦＳにおける放射光の利用」と題
する文献や米国スタンフォード大学のシンクロトロン放
射光研究所技術報告、Ｓ Ｓ ＲＬ 、 Ｔｅｃｈ、
Ｒｅｐ、Ｎａ ７５１０３におけるＢ。The conventional EXAFS measuring device is
983) rE XA F by Hiroyuki Oyanagi and Toshiaki Ota J
Utilization of synchrotron radiation in S and surface EXAFS” and a technical report from the Synchrotron Synchrotron Radiation Laboratory at Stanford University in the United States, S S RL, Tech.
B in Rep, Na 75103.
Ｍ、 Ｋｉｎｃａｉｄによる報告の中で解説されている
。Explained in a report by M. Kincaid.
しかし、従来技術では分光器から出射する所望のエネル
ギーの整数倍のエネルギーをもつ高調波を除去する機能
を持たないか、持っているとしてもＸ線収束用の固定ミ
ラーのみによっている。このため、従来技術では精度良
くデータを収集できるエネルギー範囲がおよそ４ ｋｅ
Ｖ異常に限られ、これより低エネルギー側の範囲でのデ
ータの質は充分でなかった。However, the conventional techniques do not have a function to remove harmonics having an energy that is an integral multiple of the desired energy emitted from the spectrometer, or even if they do, they only use a fixed mirror for X-ray convergence. For this reason, with conventional technology, the energy range in which data can be collected with high accuracy is approximately 4 ke.
The quality of the data was limited to the V anomaly, and the quality of the data in the lower energy range was not sufficient.
本発明の目的は１分光器やＸ線収束ミラーから出射され
る高調波、特に４ ｋｅＶより低エネルギーの試料入射
Ｘ線に対する高調波を除去し、かつ高エネルギーの散乱
Ｘ線およびけい光Ｘ線強度を減衰させ、高精度にＥ Ｘ
Ａ Ｆ Ｓを測定し得るＥＸＡＦＳ測定装置を提供する
ことにある。The purpose of the present invention is to remove harmonics emitted from a spectrometer or an X-ray converging mirror, especially harmonics of incident X-rays with energy lower than 4 keV, and to remove high-energy scattered X-rays and fluorescent X-rays. Attenuates strength and achieves high accuracy
An object of the present invention is to provide an EXAFS measuring device capable of measuring A FS.
本発明は、物質表面での微小角入射Ｘ線の反射特性を利
用して高調波を除去するもので１反射面の物質密度とＸ
線の入射角により定まる全反射臨界エネルギーより小さ
なエネルギーのＸ線のみ全反射されるという性質を利用
している。而して。The present invention removes harmonics by utilizing the reflection characteristics of small angle incident X-rays on the surface of a material.
It takes advantage of the property that only X-rays with energy smaller than the total reflection critical energy determined by the incident angle of the rays are totally reflected. Then.
本発明は分光器やＸ線収束ミラーによる入射Ｘ線エネル
ギーの走査に合わせ、入射Ｘ線と反射鏡と試料へのＸ線
照射位置とが全反射の条件に合うように、Ｘ線全反射鏡
の回転角度と試料位置とを制御し、全反射臨界エネルギ
ーが所望の試料照射エネルギーとその２倍高調波との中
間になるように設定することにより、全ての高調波Ｘ線
を除去するとともに、分光器やスリット等で発生する高
エネルギーの散乱Ｘ線およびけい光Ｘ線強度を減衰させ
ることが可能である。In accordance with the scanning of incident X-ray energy by a spectroscope or an X-ray converging mirror, the present invention uses an X-ray total reflection mirror so that the incident X-rays, the reflection mirror, and the X-ray irradiation position on the sample meet the conditions for total reflection. By controlling the rotation angle and sample position, and setting the total reflection critical energy to be between the desired sample irradiation energy and its second harmonic, all harmonic X-rays are removed, and It is possible to attenuate the intensity of high-energy scattered X-rays and fluorescent X-rays generated by spectrometers, slits, etc.
以下、本発明の実施例を図面により説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図は本発明装置の一実施例を示す縦断面図、第２図
はＸ線全反射鏡の回転角度と試料位置の関係を示す説明
図、第３図はＸ線全反射鏡の特性例を示すグラフである
。Fig. 1 is a longitudinal sectional view showing an embodiment of the device of the present invention, Fig. 2 is an explanatory diagram showing the relationship between the rotation angle of the total X-ray reflection mirror and the sample position, and Fig. 3 is the characteristics of the total reflection mirror of the X-ray. Figure 2 is a graph showing an example.
これらの図に示す実施例のＥＸＡＦＳ測定装置では、入
射Ｘ線２を通すビームパス１と、外側のミラーハウジン
グ３および内側のミラーハウジング４の組と、ミラー保
持機構５を介して内側のミラーハウジング４内に設置さ
れたＸ線全反射鏡６と、前記ミラー保持機構５を介して
Ｘ線全反射鏡６の回転角度を制御する制御手段（図示せ
ず）と、Ｘ線スリット７と、入射Ｘ線検出器８と、試料
チャンバ９と、これの内部に設置されたゴニオメータ１
１と、試料透過Ｘ線検出器１２と、第１．第２の架台１
３．１４と、前記第１の架台１３の回転角度を制御する
制御手段としてのアクチュエータ１５と、前記Ｘ線全反
射鏡６や第１の架台１３等を支持するブラケット１７と
を備えて構成されている。The EXAFS measuring device of the embodiment shown in these figures includes a beam path 1 through which incident X-rays 2 pass, a set of an outer mirror housing 3 and an inner mirror housing 4, and a mirror holding mechanism 5 that connects the inner mirror housing 4 to the beam path 1. an X-ray total reflection mirror 6 installed inside, a control means (not shown) for controlling the rotation angle of the X-ray total reflection mirror 6 via the mirror holding mechanism 5, an X-ray slit 7, and an A line detector 8, a sample chamber 9, and a goniometer 1 installed inside this
1, a sample transmission X-ray detector 12, and a 1st. Second pedestal 1
3.14, an actuator 15 as a control means for controlling the rotation angle of the first pedestal 13, and a bracket 17 that supports the total X-ray reflection mirror 6, the first pedestal 13, etc. ing.
前記ビームパス１は、分光器またはＸ線収束ミラー（い
ずれも図示せず）からの放射光をＸ線全反射鏡６に導く
ようになっている。前記入射Ｘ線２には、不回避的に高
調波を含んでいる。The beam path 1 is adapted to guide emitted light from a spectroscope or an X-ray convergence mirror (none of which is shown) to an X-ray total reflection mirror 6. The incident X-ray 2 inevitably contains harmonics.
前記ミラーハウジング３，４は、内外二重構造となって
おり、相対的に回転運動をしても高真空を保ち得るよう
に構成されている。The mirror housings 3 and 4 have a double inner and outer structure, and are configured to maintain a high vacuum even if they rotate relative to each other.
前記ミラー保持機構５は、第２の架台１４上に立設され
たブラケット１７に設けられた回転軸（図示せず）を介
して、Ｘ線全反射１１！６を回転可能に支持している。The mirror holding mechanism 5 rotatably supports the X-ray total reflection 11!6 via a rotating shaft (not shown) provided on a bracket 17 erected on the second pedestal 14. .
前記回転軸の回りは、真空シールされている。The rotation axis is vacuum sealed.
前記Ｘ線全反射鏡６は、入射Ｘ線検出器８の入射側に設
置されており、この実施例ではＸ線全反射鏡６と入射Ｘ
線検出器８との間にＸ線スリット７が装置されている。The X-ray total reflection mirror 6 is installed on the incident side of the incident X-ray detector 8, and in this embodiment, the X-ray total reflection mirror 6 and the incident X-ray
An X-ray slit 7 is provided between the X-ray detector 8 and the X-ray detector 8 .
前記Ｘ線全反射鏡６の鏡材には溶融石英板等が用いられ
１表面物質としてはＮｉ膜の他にＡｌ、Ｓｉ、Ｃｒ、Ｃ
：ｕ膜等も使用可能である。そして、このＸ線全反射鏡
６は、入射Ｘ線２中に不回避的に含まれている高調波を
除去し得るようになっている。A fused silica plate or the like is used as the mirror material of the X-ray total reflection mirror 6, and the surface materials include Al, Si, Cr, and C in addition to Ni film.
:U film etc. can also be used. The X-ray total reflection mirror 6 is designed to remove harmonics unavoidably included in the incident X-rays 2.
前記Ｘ線全反射鏡６の回転角度の制御手段は、前記回転
軸の回りに前記Ｘ線全反射鏡６を回転させ、入射Ｘ線２
に対してＸ線全反射鏡６を設定角度に傾斜させるように
なっている。The control means for controlling the rotation angle of the X-ray total reflection mirror 6 rotates the X-ray total reflection mirror 6 around the rotation axis, so that the incident X-ray 2
The total X-ray reflection mirror 6 is tilted at a set angle with respect to the target.
前記Ｘ線スリット７は、Ｘ線全反射鏡６で発生するけい
光Ｘ線や散乱Ｘ線を遮蔽するようになっている。The X-ray slit 7 is designed to block fluorescent X-rays and scattered X-rays generated by the X-ray total reflection mirror 6.
前記入射Ｘ線検出器８は、入射Ｘ線強度を測定し得るよ
うになっている。The incident X-ray detector 8 is capable of measuring incident X-ray intensity.
前記試料チャンバ９には、試料１０のゴニオメータ１１
が設置されており、このゴニオメータ１１は入射Ｘ線２
に対する試料１０の設置角度を制御するようになってい
る。The sample chamber 9 includes a goniometer 11 for the sample 10.
is installed, and this goniometer 11 receives incident X-rays 2.
The installation angle of the sample 10 relative to the sample 10 is controlled.
前記試料透過Ｘ線検出器１２は、試料１０から発生する
けい光Ｘ線や２次電子、オー゛ジェ電子等の強度、およ
び試料１０を透過する透過Ｘ線の強度を測定するように
なっている。The sample transmitted X-ray detector 12 measures the intensity of fluorescent X-rays, secondary electrons, Auger electrons, etc. generated from the sample 10 and the intensity of transmitted X-rays transmitted through the sample 10. There is.
前記第１の架台１３は、ブラケット１７に設けられた回
転軸（図示せず）にヨーク１３′を介して回動可能に支
持されている。また、第１の架台１３には前記Ｘ線スリ
ット７と、入射Ｘ線検出器８と、ゴ二オメータ１１を持
った試料チャンバ９と、試料透過Ｘ線検出器１２とが搭
載されている。さらに、第１の架台１３は第２の架台１
４に取り付けられたアクチュエータ１５に連結されてい
る。The first pedestal 13 is rotatably supported by a rotating shaft (not shown) provided on a bracket 17 via a yoke 13'. Furthermore, the first pedestal 13 is equipped with the X-ray slit 7 , an incident X-ray detector 8 , a sample chamber 9 having a goniometer 11 , and a sample-transmitting X-ray detector 12 . Furthermore, the first pedestal 13 is connected to the second pedestal 1
The actuator 15 is connected to the actuator 15 attached to the 4.
前記Ｘ線全反射鏡６の回転軸と、第１の架台１３の回転
軸とは、中心が一致している。The rotational axis of the X-ray total reflection mirror 6 and the rotational axis of the first mount 13 are centered.
前記第２の架台１４は、脚１６により高さおよび水平度
を調整可能に支持されている。The second pedestal 14 is supported by legs 16 so that its height and horizontality can be adjusted.
前記アクチュエータ１５は、第１の架台１３を回転軸の
回りに回動させ、入射Ｘ線２に対して設定角度に傾斜さ
れたＸ線全反射鏡６に対して、試料１０のＸ線照射位置
が全反射の条件に合うように制御可能に構成されている
。The actuator 15 rotates the first pedestal 13 around the rotation axis, and adjusts the X-ray irradiation position of the sample 10 to the X-ray total reflection mirror 6 tilted at a set angle with respect to the incident X-rays 2. is configured to be controllable to meet the conditions of total internal reflection.
ところで、第３図はｘｍ全反射鏡の特性例を示し、全反
射臨界Ｘ線エネルギーＥｃが１０ｋｅＶの場合のＸ線エ
ネルギーに対する反射率の変化を示している。By the way, FIG. 3 shows an example of the characteristics of the xm total reflection mirror, and shows the change in reflectance with respect to the X-ray energy when the total reflection critical X-ray energy Ec is 10 keV.
７ ｋｅＶのエネルギーのＸ線を試料１０に照射する場
合、全反射臨界Ｘ線エネルギーＥｃを１ｏｋｅＶとすれ
ば、高調波の基本波（７ｋｅＶ）に対する強度比は０．
０２以下であり、高調波の次数が高い程小さくなり、高
調波および高エネルギーの散乱Ｘ線を除去することがで
きる。When the sample 10 is irradiated with X-rays with an energy of 7 keV, if the total reflection critical X-ray energy Ec is 1okeV, the intensity ratio of the harmonics to the fundamental wave (7keV) is 0.
02 or less, and the higher the order of harmonics, the smaller the harmonics, and it is possible to remove harmonics and high-energy scattered X-rays.
全反射臨界Ｘ線エネルギーＥｃ（ｅＶ）、Ｘ線反射鏡６
の表面物質の密度ρ（ｇ ／ ａｌ ）と、Ｘ線の反射
角θ（ラジアン）は次式に示す関係となる６Ｅｃ＝１９
．８Ｘ７ρ／θ −（Ｌ）いま、一つの
実施例としてＸ線反射鏡６の表面物質をＮｉ膜とし、こ
の時の反射角θの最小値を６Ｘ１０−３（ラジアン）と
すると、（１）式により全反射臨界Ｘ線エネルギーＥＣ
の最大値は９ 、８ｋｅＶとなり、および７ ｋｅＶま
での入射Ｘ線２の強度を大きく低下せずに高調波を除去
することが可能である。Total reflection critical X-ray energy Ec (eV), X-ray reflector 6
The density ρ (g/al) of the surface substance and the X-ray reflection angle θ (radians) have the following relationship: 6Ec = 19
．． 8X7ρ/θ - (L) Now, as an example, if the surface material of the X-ray reflector 6 is a Ni film and the minimum value of the reflection angle θ is 6X10-3 (radian), then equation (1) is obtained. Total internal reflection critical X-ray energy EC
The maximum value of is 9.8 keV, and it is possible to remove harmonics without significantly reducing the intensity of incident X-rays 2 up to 7 keV.
入射Ｘ線２のエネルギーＥ（ｅＶ）とすると、高調波を
除去するための設定角度θ０は、Ｘ線全反射６の表面物
質がＮｉ膜の場合、次式のようになる。Assuming that the energy of the incident X-ray 2 is E (eV), the set angle θ0 for removing harmonics is as shown in the following equation when the surface material of the total X-ray reflection 6 is a Ni film.
θ０（ラジアン） ＝４１．２／ Ｅ （ｅＶ）
・＝ （２）そこで、前記Ｘ線全反射鏡６の回転角度
の制御手段により前記Ｘ線全反射！６をその回転軸の回
りに、入射Ｘ線２のエネルギーＥとＸ線全反射鏡６の表
面物質により定まる設定角度θ０に回転させ、アクチュ
エータ１５により第１の架台■３を前記Ｘ線全反射鏡６
の回転軸に一致させた回転軸の回りに回転させる。そし
て、第２図に示すように。θ0 (radian) = 41.2/E (eV)
・= (2) Therefore, the total X-ray reflection is performed by means for controlling the rotation angle of the total X-ray reflection mirror 6! 6 is rotated around its rotation axis to a set angle θ0 determined by the energy E of the incident X-ray 2 and the surface material of the X-ray total reflection mirror 6, and the actuator 15 causes the first mount 3 to reflect the X-ray total reflection mirror 6. Mirror 6
Rotate around a rotation axis that coincides with the rotation axis of. And as shown in Figure 2.
Ｘ線全反射鏡６の設定角度がａｌの時は、その設定角度
ＯＩのほぼ２倍の回転角度の位置に試料位置１０ａを合
わせ、Ｘ線全反射鏡６の設定角度が０２の時は、その設
定角度θ２のほぼ２倍の回転角度の位置に試料位置ｔａ
ｂを合わせる。When the set angle of the X-ray total reflection mirror 6 is al, the sample position 10a is set at a position with a rotation angle approximately twice the set angle OI, and when the set angle of the X-ray total reflection mirror 6 is 02, The sample position ta is at a rotation angle approximately twice that of the set angle θ2.
Match b.
その結果、分光器やＸ線収束ミラーから出射されるＸ線
の基本波のエネルギーが４ ｋｅＶ以下であっても、そ
の高調波Ｘ線強度を１７５０以下にでき、また高エネル
ギーの散乱Ｘ線およびけい光Ｘ線強度を減衰させること
ができる。As a result, even if the energy of the fundamental wave of X-rays emitted from a spectrometer or X-ray convergence mirror is 4 keV or less, the harmonic Fluorescent X-ray intensity can be attenuated.
しかも、Ｘ線全反射鏡６の回転軸と第１の架台１３の回
転軸とを一致させているので、基本波のエネルギーを変
化させても、試料１０上のＸ線照射位置が変化しないた
め、従来のＥＸＡＦＳ測定装置に比較して極めて質の高
いデータを収得することができる。Moreover, since the rotation axis of the total X-ray reflection mirror 6 and the rotation axis of the first mount 13 are made to coincide with each other, even if the energy of the fundamental wave is changed, the X-ray irradiation position on the sample 10 does not change. , it is possible to obtain extremely high quality data compared to conventional EXAFS measurement equipment.
なお、本発明ではＸ線全反射鏡６の回転角度の制御手段
を第１の架台１３の回転操作に連動させるようにしても
よい。In the present invention, the control means for controlling the rotation angle of the total X-ray reflection mirror 6 may be linked to the rotation operation of the first mount 13.
以上説明した本発明によれば、回動可能に架台を支持し
、この架台に少なくとも入射Ｘ線検出器と試料チャンバ
と試料透過Ｘ線検出器とを搭載し、前記入射Ｘ線検出器
の入射側に、回動可能にＸ線全反射鏡を設置し、架台の
回転軸とＸ線全反射鏡の回転軸とを一致させるとともに
、前記Ｘ線全反射鏡の回転角度を制御する制御手段と、
前記架台の回転角度制御手９段とを設けており、入射Ｘ
線とＸ線全反射鏡と試料のＸ線照射位置とが全反射の条
件に合うように制御できるので、入射Ｘ線の基本波のエ
ネルギーが４ ｋｅＶ以下であってもその高調波を除去
でき、また高エネルギーの散乱Ｘ線およびけい光Ｘ線強
度をも減衰でき、しかもＸ線全反射鏡の回転軸と架台の
回転軸とを一致させてぃるので、入射Ｘ線の基本波のエ
ネルギーを変化させても試料上のＸ線照射位置は変化し
ないため、高精度にＥＸＡＦＳを測定し得る効果がある
。According to the present invention described above, a pedestal is rotatably supported, at least an incident X-ray detector, a sample chamber, and a sample transmission X-ray detector are mounted on the pedestal, and the incident X-ray detector is A control means for rotatably installing an X-ray total reflection mirror on the side, aligning the rotation axis of the pedestal with the rotation axis of the X-ray total reflection mirror, and controlling the rotation angle of the X-ray total reflection mirror; ,
Nine stages of rotation angle control means for the mount are provided, and the incident X
Since the X-ray total reflection mirror and the X-ray irradiation position on the sample can be controlled to meet the conditions for total reflection, harmonics can be removed even if the fundamental wave energy of the incident X-ray is 4 keV or less. In addition, the intensity of high-energy scattered X-rays and fluorescent X-rays can be attenuated, and since the rotation axis of the total X-ray reflection mirror and the rotation axis of the mount are aligned, the energy of the fundamental wave of incident X-rays can be reduced. Since the X-ray irradiation position on the sample does not change even if the value is changed, there is an effect that EXAFS can be measured with high accuracy.
第１図は本発明装置の一実施例を示す縦断面図、第２図
はｘ、ｓ全反射鏡の回転角度と試料位置の関係を示す説
明図、第３図はＸ線全反射鏡の特性例を示すグラフであ
る。
２・・・入射Ｘ線、３，４・・・ミラーハウジング、５
・・・ミラー保持機構、６・・・Ｘ線全反射鏡、８・・
・入射Ｘ線検出器、９・・・試料チャンバ、１０・・・
試料、１１・・・試料用のゴニオメータ、１２・・・試
料透過Ｘ線検出器。
１３・・・回動可能な架台としての第１の架台、１４・
・・第２の架台、１５・・・第１の架台の回転角度を制
御する制御手段としてのアクチュエータ、１７・・・Ｘ
線全反射鏡や第１の架台等を支持するブラケット。
代理人 弁理士 秋 本 正 実第２図Fig. 1 is a longitudinal sectional view showing an embodiment of the device of the present invention, Fig. 2 is an explanatory diagram showing the relationship between the rotation angle of the x and s total reflection mirrors and the sample position, and Fig. 3 is an illustration of the X-ray total reflection mirror. It is a graph showing an example of characteristics. 2... Incident X-ray, 3, 4... Mirror housing, 5
...Mirror holding mechanism, 6...X-ray total reflection mirror, 8...
- Incident X-ray detector, 9...sample chamber, 10...
Sample, 11... Goniometer for sample, 12... Sample transmission X-ray detector. 13... A first pedestal as a rotatable pedestal, 14.
...Second mount, 15...Actuator as a control means for controlling the rotation angle of the first mount, 17...X
A bracket that supports the linear total reflection mirror, the first mount, etc. Agent Patent Attorney Tadashi Akimoto Figure 2
Claims (1)
線検出器と試料チャンバと試料透過Ｘ線検出器とを搭載
し、前記入射Ｘ線検出器の入射側に、回動可能にＸ線全
反射鏡を設置し、架台の回転軸とＸ線全反射鏡の回転軸
とを一致させるとともに、前記Ｘ線全反射鏡の回転角度
を制御する制御手段と、前記架台の回転角度の制御手段
とを設けたことを特徴とする拡張Ｘ線吸収端微細構造測
定装置。A frame is rotatably supported, and at least an incident
It is equipped with a radiation detector, a sample chamber, and a sample transmission X-ray detector, and a rotatable total X-ray reflection mirror is installed on the incident side of the incident X-ray detector, and An extended X-ray absorption edge microstructure, characterized in that it is provided with a control means for aligning the rotation axis of the reflecting mirror, and for controlling the rotation angle of the total X-ray reflection mirror, and a control means for controlling the rotation angle of the pedestal. Structure measurement device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61000233A JPH0692943B2 (en) | 1986-01-07 | 1986-01-07 | Extended X-ray absorption edge fine structure measuring device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61000233A JPH0692943B2 (en) | 1986-01-07 | 1986-01-07 | Extended X-ray absorption edge fine structure measuring device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62159031A true JPS62159031A (en) | 1987-07-15 |
| JPH0692943B2 JPH0692943B2 (en) | 1994-11-16 |
Family
ID=11468248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61000233A Expired - Lifetime JPH0692943B2 (en) | 1986-01-07 | 1986-01-07 | Extended X-ray absorption edge fine structure measuring device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0692943B2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52126276A (en) * | 1976-04-15 | 1977-10-22 | Rigaku Denki Kogyo Kk | Xxray spectrometer |
-
1986
- 1986-01-07 JP JP61000233A patent/JPH0692943B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52126276A (en) * | 1976-04-15 | 1977-10-22 | Rigaku Denki Kogyo Kk | Xxray spectrometer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0692943B2 (en) | 1994-11-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0318012A2 (en) | X-ray analyzer | |
| JPS63501735A (en) | Improved X-ray attenuation method and device | |
| JP2019184610A (en) | Apparatus and method for x-ray analysis with hybrid control of beam divergence | |
| JPH0744967Y2 (en) | X-ray fluorescence film thickness meter | |
| US4535469A (en) | X-Ray analysis apparatus having an adjustable stray radiation slit | |
| US7860217B2 (en) | X-ray diffraction measuring apparatus having debye-scherrer optical system therein, and an X-ray diffraction measuring method for the same | |
| US2805341A (en) | Diffractometer | |
| US4358854A (en) | Measuring devices for X-ray fluorescence analysis | |
| JPS62159031A (en) | Measuring device for fine structure of extended x-ray absorption edge | |
| US3609370A (en) | Radiation collimator for use in x-ray systems | |
| US4580283A (en) | Two-crystal X-ray spectrometer | |
| KR100509301B1 (en) | A shutter mechanism for a light irradiation apparatus | |
| JP6352616B2 (en) | X-ray measuring device | |
| US2805343A (en) | Diffractometer | |
| US3073952A (en) | X-ray diffraction apparatus | |
| US5115460A (en) | X-ray analysis apparatus comprising an adjustable slit diaphragm | |
| JP2002031523A (en) | Thin film measuring apparatus and method and thin film formation system | |
| JP2925817B2 (en) | 2-crystal X-ray monochromator | |
| KR100429830B1 (en) | X-ray electronic spectrum analyzer | |
| JP2001141674A (en) | Sample holder for measuring diffraction of obliquely emitted x-rays and apparatus and method for measuring diffraction of obliquely emitted x-rays using the same | |
| JP2002005858A (en) | Total reflection x-ray fluorescence analyzer | |
| JPH05332958A (en) | X-ray diffraction apparatus and position-sensitive gas-filled x-ray counter used for it | |
| JP3710023B2 (en) | Clack type slitting device | |
| JP2584946Y2 (en) | X-ray fluorescence analyzer | |
| JPH04236348A (en) | X-ray diffraction apparatus with wide range x-ray detector |