JPS62149174A - Optical semiconductor device - Google Patents
Optical semiconductor deviceInfo
- Publication number
- JPS62149174A JPS62149174A JP60289894A JP28989485A JPS62149174A JP S62149174 A JPS62149174 A JP S62149174A JP 60289894 A JP60289894 A JP 60289894A JP 28989485 A JP28989485 A JP 28989485A JP S62149174 A JPS62149174 A JP S62149174A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- hard coat
- light
- coat film
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 230000003287 optical effect Effects 0.000 title claims description 10
- 239000011347 resin Substances 0.000 claims abstract description 9
- 229920005989 resin Polymers 0.000 claims abstract description 9
- 239000004925 Acrylic resin Substances 0.000 claims abstract description 4
- 229920000178 Acrylic resin Polymers 0.000 claims abstract description 4
- 229920003023 plastic Polymers 0.000 abstract description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 abstract description 4
- 239000003822 epoxy resin Substances 0.000 abstract description 2
- 239000012778 molding material Substances 0.000 abstract description 2
- 229920000647 polyepoxide Polymers 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Abstract
Description
【発明の詳細な説明】
［ｐｌｌ上上利用分野］
本発明は透明ａ４脂モールドされた光半導体装置の透明
樹脂モールド表面保護被膜材料に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application in PLL] The present invention relates to a transparent resin mold surface protective coating material for an optical semiconductor device molded with transparent A4 resin.
本発明は光半導体侠ｒｊＩｔＫ関し、半導体装置が第１
の透明樹脂でモールドされて成り、該第１の透明樹脂表
面の少くとも光受光または発光部にはアクリル樹脂膜が
度慣されて成る事を特徴とする。The present invention relates to an optical semiconductor device, in which a semiconductor device is the first
It is characterized in that an acrylic resin film is coated on at least the light-receiving or light-emitting portion of the first transparent resin surface.
従来、透明樹脂でモールドされた光半導体装置の表面像
ｎ！膜とすては５１０１等無機質膜でハード・コートさ
れるのが通例であった。Surface image of an optical semiconductor device conventionally molded with transparent resin n! The membrane was usually hard coated with an inorganic membrane such as 5101.
［発明が解決しようとする問題点及び目的］しかし、上
記従来技術によると、無機質膜のハード・コート膜は下
地透明樹脂との熱膨張係数差が大なる為にクラックが入
り易いという問題点があった。[Problems and objects to be solved by the invention] However, according to the above-mentioned prior art, there is a problem that the inorganic hard coat film is prone to cracking due to the large difference in thermal expansion coefficient with the underlying transparent resin. there were.
本発明は、かかる従来技術の問題点をなくし、ハード・
コート膜としての耐摩擦性能を保持しつつ、かつクラッ
クの入らない光半導体装置のハード・コート膜を提供す
る事を目的とする。The present invention eliminates the problems of the prior art and
The purpose of the present invention is to provide a hard coat film for an optical semiconductor device that does not cause cracks while maintaining friction resistance as a coat film.
上記問題点を解決するために１本発明は、透明慣脂對止
光半導体装置の透明樹脂の少くとも受光又は発光部表面
をアクリル樹脂膜で被覆する手段をとる。In order to solve the above-mentioned problems, one aspect of the present invention is to cover at least the surface of the light-receiving or light-emitting portion of the transparent resin of the transparent photonic semiconductor device with an acrylic resin film.
以下、実施例により本発明を詳述する。 Hereinafter, the present invention will be explained in detail with reference to Examples.
＠１図は、本発明の一実施例を示す光半導体装置の断面
図である。すなわち、リード・フレーム１には、例えば
固体イメージ・センサーあるいけ発光素子等の半導体装
１１２をリード＠３と共に組立て、透明エポキシ樹脂温
による透明プラスチック・モールド４を施し、該透明プ
ラスチック・モールド４０表面に、紫外線硬化したアク
リル・ハード・コート膜５を形成して成る。Figure @1 is a cross-sectional view of an optical semiconductor device showing one embodiment of the present invention. That is, a semiconductor device 112 such as a solid-state image sensor or a light-emitting element is assembled together with leads@3 on the lead frame 1, and a transparent plastic mold 4 made of transparent epoxy resin is applied to the surface of the transparent plastic mold 40. Then, an ultraviolet-cured acrylic hard coat film 5 is formed.
［発明の効果］
本発明の如く、透明プラスチック・モールドされた光半
導体装置の表面とアクリル・ハード・コート膜を少くと
も発光部あるいは発光部に施すことにより、機械的摩擦
による傷の発光もなく、且つ、下地、モールド材との熱
膨張差によるハード・コート膜のクラック発光も少ない
光半導体装置を提供できる効果がある。[Effects of the Invention] According to the present invention, by applying an acrylic hard coat film to the surface of an optical semiconductor device molded with transparent plastic and at least to the light emitting part or the light emitting part, there is no light emission due to scratches caused by mechanical friction. Moreover, it is possible to provide an optical semiconductor device in which cracks in the hard coat film due to the difference in thermal expansion between the base material and the molding material cause less light emission.
′ｊ４１図は本発明の一実施例を示す光半導体装置の断
面図である。
１・・・リード・フレーム
２・・・半導体装置
３・・・リード線
４・・・透明プラスチック・モールド
５・・・アクリル・ハード・コート膜
以 上
他１名Figure 'j41 is a sectional view of an optical semiconductor device showing an embodiment of the present invention. 1...Lead frame 2...Semiconductor device 3...Lead wire 4...Transparent plastic mold 5...Acrylic hard coat film or above and 1 other person
Claims (1)
第１の透明樹脂表面の少くとも光受光または発光部には
アクリル樹脂膜が被覆されて成る事を特徴とする光半導
体装置。1. An optical semiconductor device, characterized in that the semiconductor device is molded with a first transparent resin, and at least a light-receiving or light-emitting portion of the surface of the first transparent resin is coated with an acrylic resin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60289894A JPS62149174A (en) | 1985-12-23 | 1985-12-23 | Optical semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60289894A JPS62149174A (en) | 1985-12-23 | 1985-12-23 | Optical semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62149174A true JPS62149174A (en) | 1987-07-03 |
Family
ID=17749141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60289894A Pending JPS62149174A (en) | 1985-12-23 | 1985-12-23 | Optical semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62149174A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6635955B2 (en) | 2000-11-15 | 2003-10-21 | Vishay Semiconductor Gmbh | Molded electronic component |
| US6653564B2 (en) | 2000-11-25 | 2003-11-25 | Vishay Semiconductor Gmbh | Conductor strip arrangement for a molded electronic component and process for molding |
| JP2006253218A (en) * | 2005-03-08 | 2006-09-21 | Tdk Corp | Optical semiconductor device and its manufacturing method |
-
1985
- 1985-12-23 JP JP60289894A patent/JPS62149174A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6635955B2 (en) | 2000-11-15 | 2003-10-21 | Vishay Semiconductor Gmbh | Molded electronic component |
| US6653564B2 (en) | 2000-11-25 | 2003-11-25 | Vishay Semiconductor Gmbh | Conductor strip arrangement for a molded electronic component and process for molding |
| JP2006253218A (en) * | 2005-03-08 | 2006-09-21 | Tdk Corp | Optical semiconductor device and its manufacturing method |
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