JPS62147725A - Charged beam exposure apparatus - Google Patents

Charged beam exposure apparatus

Info

Publication number
JPS62147725A
JPS62147725A JP28983385A JP28983385A JPS62147725A JP S62147725 A JPS62147725 A JP S62147725A JP 28983385 A JP28983385 A JP 28983385A JP 28983385 A JP28983385 A JP 28983385A JP S62147725 A JPS62147725 A JP S62147725A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
deflectors
main
sub
charged beam
exposure apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28983385A
Inventor
Kenji Kurihara
Tsuneo Okubo
Original Assignee
Nippon Telegr & Teleph Corp <Ntt>
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To improve the throughput of a charged beam exposure apparatus by providing a main deflection controller, and a sub deflection controller for independently controlling a plurality of sub deflectors corresponding to main deflectors.
CONSTITUTION: A first charged beam exposure apparatus splits a plurality of deflectors corresponding to charged beams into main and sub deflectors 108, 107, and provides main deflector controllers 120 for commonly controlling two or more main deflectors, and sub deflector controllers 119 for independently controlling the corresponding sub deflectors. A second charged beam exposure apparatus associates two or more charged beam sources and deflectors in one mirror body 200, provides a plurality of mirror bodies, splits the deflectors into main and sub reflectors, and provides main deflector controllers for common ly controlling two or more main deflectors in the same mirror body and sub deflector controllers for independently controlling the corresponding sub deflectors. Thus, the throughput of the apparatus is improved.
COPYRIGHT: (C)1987,JPO&Japio
JP28983385A 1985-12-23 1985-12-23 Charged beam exposure apparatus Pending JPS62147725A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28983385A JPS62147725A (en) 1985-12-23 1985-12-23 Charged beam exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28983385A JPS62147725A (en) 1985-12-23 1985-12-23 Charged beam exposure apparatus

Publications (1)

Publication Number Publication Date
JPS62147725A true true JPS62147725A (en) 1987-07-01

Family

ID=17748358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28983385A Pending JPS62147725A (en) 1985-12-23 1985-12-23 Charged beam exposure apparatus

Country Status (1)

Country Link
JP (1) JPS62147725A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5430292A (en) * 1991-06-10 1995-07-04 Fujitsu Limited Pattern inspection apparatus and electron beam apparatus
US5557105A (en) * 1991-06-10 1996-09-17 Fujitsu Limited Pattern inspection apparatus and electron beam apparatus
WO1999059183A1 (en) * 1998-05-11 1999-11-18 Advantest Corporation Electron beam exposure method and electron beam exposure apparatus
JP2002110534A (en) * 2000-10-03 2002-04-12 Advantest Corp Semiconductor element manufacturing system and electron beam aligner
US6486479B1 (en) 1994-03-15 2002-11-26 Fujitsu Limited Charged particle beam exposure system and method
JP2003518765A (en) * 1999-12-23 2003-06-10 フェイ カンパニ Multiple beam lithography apparatus mutually distinct light limits the Kagami径
JP2012114114A (en) * 2010-11-19 2012-06-14 Canon Inc Lithography apparatus, manufacturing method of goods, manufacturing method of deflector, and manufacturing method of lithography apparatus

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5430292A (en) * 1991-06-10 1995-07-04 Fujitsu Limited Pattern inspection apparatus and electron beam apparatus
US5557105A (en) * 1991-06-10 1996-09-17 Fujitsu Limited Pattern inspection apparatus and electron beam apparatus
US6486479B1 (en) 1994-03-15 2002-11-26 Fujitsu Limited Charged particle beam exposure system and method
US6646275B2 (en) 1994-03-15 2003-11-11 Fujitsu Limited Charged particle beam exposure system and method
WO1999059183A1 (en) * 1998-05-11 1999-11-18 Advantest Corporation Electron beam exposure method and electron beam exposure apparatus
US6218060B1 (en) 1998-05-11 2001-04-17 Advantest Corporation Electron beam exposure method and electron beam exposure apparatus
JP2003518765A (en) * 1999-12-23 2003-06-10 フェイ カンパニ Multiple beam lithography apparatus mutually distinct light limits the Kagami径
JP2002110534A (en) * 2000-10-03 2002-04-12 Advantest Corp Semiconductor element manufacturing system and electron beam aligner
JP4601146B2 (en) * 2000-10-03 2010-12-22 株式会社アドバンテスト Electron beam exposure apparatus
JP2012114114A (en) * 2010-11-19 2012-06-14 Canon Inc Lithography apparatus, manufacturing method of goods, manufacturing method of deflector, and manufacturing method of lithography apparatus

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